JP2012509203A - 傾斜組成物バリア - Google Patents
傾斜組成物バリア Download PDFInfo
- Publication number
- JP2012509203A JP2012509203A JP2011536382A JP2011536382A JP2012509203A JP 2012509203 A JP2012509203 A JP 2012509203A JP 2011536382 A JP2011536382 A JP 2011536382A JP 2011536382 A JP2011536382 A JP 2011536382A JP 2012509203 A JP2012509203 A JP 2012509203A
- Authority
- JP
- Japan
- Prior art keywords
- barrier assembly
- inorganic
- layer
- oxide
- atom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 92
- 239000000203 mixture Substances 0.000 title claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 36
- 239000011147 inorganic material Substances 0.000 claims abstract description 36
- 238000004544 sputter deposition Methods 0.000 claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000009977 dual effect Effects 0.000 claims abstract description 13
- 230000005540 biological transmission Effects 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 229920000642 polymer Polymers 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 20
- 238000009499 grossing Methods 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 230000001681 protective effect Effects 0.000 claims description 18
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 238000005477 sputtering target Methods 0.000 claims description 11
- -1 polyethylene terephthalate Polymers 0.000 claims description 10
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 10
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 4
- 150000001247 metal acetylides Chemical class 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 150000002910 rare earth metals Chemical class 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 229930040373 Paraformaldehyde Natural products 0.000 claims description 3
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 3
- 239000004697 Polyetherimide Substances 0.000 claims description 3
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 229920002492 poly(sulfone) Polymers 0.000 claims description 3
- 229920002530 polyetherether ketone Polymers 0.000 claims description 3
- 229920001601 polyetherimide Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 229920006324 polyoxymethylene Polymers 0.000 claims description 3
- 229920006380 polyphenylene oxide Polymers 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 239000004954 Polyphthalamide Substances 0.000 claims description 2
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 claims description 2
- 239000004811 fluoropolymer Substances 0.000 claims description 2
- 229920002313 fluoropolymer Polymers 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000002052 molecular layer Substances 0.000 claims description 2
- 229920002312 polyamide-imide Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229920006375 polyphtalamide Polymers 0.000 claims description 2
- 229920002554 vinyl polymer Polymers 0.000 claims description 2
- 239000004962 Polyamide-imide Substances 0.000 claims 1
- 239000004695 Polyether sulfone Substances 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- 229920006393 polyether sulfone Polymers 0.000 claims 1
- 239000010410 layer Substances 0.000 description 150
- 239000010408 film Substances 0.000 description 19
- 238000000576 coating method Methods 0.000 description 17
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 14
- 238000000151 deposition Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 229920006254 polymer film Polymers 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- 229910052755 nonmetal Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 4
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- WOLATMHLPFJRGC-UHFFFAOYSA-N furan-2,5-dione;styrene Chemical compound O=C1OC(=O)C=C1.C=CC1=CC=CC=C1 WOLATMHLPFJRGC-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920001230 polyarylate Polymers 0.000 description 2
- 229920006260 polyaryletherketone Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- MXFQRSUWYYSPOC-UHFFFAOYSA-N (2,2-dimethyl-3-prop-2-enoyloxypropyl) prop-2-enoate Chemical class C=CC(=O)OCC(C)(C)COC(=O)C=C MXFQRSUWYYSPOC-UHFFFAOYSA-N 0.000 description 1
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical class C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 1
- YIJYFLXQHDOQGW-UHFFFAOYSA-N 2-[2,4,6-trioxo-3,5-bis(2-prop-2-enoyloxyethyl)-1,3,5-triazinan-1-yl]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCN1C(=O)N(CCOC(=O)C=C)C(=O)N(CCOC(=O)C=C)C1=O YIJYFLXQHDOQGW-UHFFFAOYSA-N 0.000 description 1
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- GTELLNMUWNJXMQ-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical class OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.CCC(CO)(CO)CO GTELLNMUWNJXMQ-UHFFFAOYSA-N 0.000 description 1
- YMUQRDRWZCHZGC-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical class OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.CCC(CO)(CO)CO.CCC(CO)(CO)CO YMUQRDRWZCHZGC-UHFFFAOYSA-N 0.000 description 1
- FQMIAEWUVYWVNB-UHFFFAOYSA-N 3-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OC(C)CCOC(=O)C=C FQMIAEWUVYWVNB-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- IAXXETNIOYFMLW-COPLHBTASA-N [(1s,3s,4s)-4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl] 2-methylprop-2-enoate Chemical compound C1C[C@]2(C)[C@@H](OC(=O)C(=C)C)C[C@H]1C2(C)C IAXXETNIOYFMLW-COPLHBTASA-N 0.000 description 1
- AOUVCMGRGUPDDD-UHFFFAOYSA-N [1-(prop-2-enoyloxymethyl)cyclohexyl]methyl prop-2-enoate Chemical class C=CC(=O)OCC1(COC(=O)C=C)CCCCC1 AOUVCMGRGUPDDD-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical class C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- KNSXNCFKSZZHEA-UHFFFAOYSA-N [3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical class C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C KNSXNCFKSZZHEA-UHFFFAOYSA-N 0.000 description 1
- VEBCLRKUSAGCDF-UHFFFAOYSA-N ac1mi23b Chemical compound C1C2C3C(COC(=O)C=C)CCC3C1C(COC(=O)C=C)C2 VEBCLRKUSAGCDF-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical class OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229940119545 isobornyl methacrylate Drugs 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011104 metalized film Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000003121 nonmonotonic effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- FSDNTQSJGHSJBG-UHFFFAOYSA-N piperidine-4-carbonitrile Chemical compound N#CC1CCNCC1 FSDNTQSJGHSJBG-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/12—Protection against corrosion
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/027—Graded interfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Laminated Bodies (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
PET基材フィルムを、アクリレート平滑化層、傾斜無機酸化物(GIO)、酸化ケイ素(SiOx)及びアクリレート保護層のスタックで覆った。GIOは、平滑化層に隣接するケイ素に富んだ酸化物と、保護層に隣接するアルミニウムに富んだ酸化物との間で変更される、深さ方向の組成を有した。個々の層は以下のように形成された。
Claims (33)
- バリアアセンブリであって、
第1の表面を有する基材と、
前記第1の表面に隣接する無機層と、を備え、前記無機層が、
第1の無機材料と、
第2の無機材料と、を含み、
前記第1の無機材料の前記第2の無機材料に対する比は、前記第1の表面に直交する方向にて変化する、バリアアセンブリ。 - 前記無機層に隣接して、前記基材の前記第1の表面の反対側に配置された保護高分子層を更に備える、請求項1に記載のバリアアセンブリ。
- 前記第1の表面と前記無機層との間に配置された平滑化高分子層を更に備える、請求項1に記載のバリアアセンブリ。
- 前記無機層が可視光透過性である、請求項1に記載のバリアアセンブリ。
- 前記第1の無機材料及び前記第2の無機材料が、IIA、IIIA、IVA、VA、VIA、VIIA、IB、若しくはIIB族からの原子、IIIB、IVB若しくはVB族の金属、希土類金属、又はそれらの組み合わせの酸化物、窒化物、炭化物又はホウ化物を含む、請求項1に記載のバリアアセンブリ。
- 前記第1の無機材料が第1の原子を含み、前記第2の無機材料が前記第1の原子とは異なる第2の原子を含み、前記比は、前記第1の原子の前記第2の原子に対する原子比である、請求項5に記載のバリアアセンブリ。
- 前記第1の原子がケイ素を含み、前記第2の原子がアルミニウムを含む、請求項6に記載のバリアアセンブリ。
- 前記比が、前記第1の表面に直交する方向にて0.9越から0.1未満に変化する、請求項1に記載のバリアアセンブリ。
- 前記比が、前記第1の表面に直交する方向にて0.7越から0.3未満に変化する、請求項1に記載のバリアアセンブリ。
- 前記比が、前記第1の表面に直交する方向にて単調に変化する、請求項1に記載のバリアアセンブリ。
- 前記無機層と前記保護高分子層との間に配置された第3の無機材料を更に備える、請求項2に記載のバリアアセンブリ。
- 前記第3の無機材料が、IIA、IIIA、IVA、VA、VIA、VIIA、IB、若しくはIIB族の原子、IIIB、IVB、若しくはVB族の金属、希土類金属、又はそれらの組み合わせの酸化物、窒化物、炭化物又はホウ化物を含む、請求項11に記載のバリアアセンブリ。
- 水蒸気透過率が、50℃及び100%相対湿度で0.005g/m2/日未満である、請求項1に記載のバリアアセンブリ。
- 水蒸気透過率が、85℃及び100%相対湿度で0.005g/m2/日未満である、請求項1に記載のバリアアセンブリ。
- 前記基材が、電子デバイスを含む、請求項1に記載のバリアアセンブリ。
- 前記電子デバイスが、有機エレクトロルミネセントデバイス(OLED)、電気泳動デバイス、光起電デバイス、薄膜トランジスタデバイス、又はそれらの組み合わせを含む、請求項15に記載のバリアアセンブリ。
- 前記基材が、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)、熱安定化PET、熱安定化PEN、ポリオキシメチレン、ポリビニルナフタレン、ポリエーテルエーテルケトン、フルオロポリマー、ポリカーボネート、ポリメチルメタクリレート、ポリα−メチルスチレン、ポリスルホン、ポリフェニレンオキシド、ポリエーテルイミド、ポリエーテルスルホン、ポリアミドイミド、ポリイミド若しくはポリフタルアミド、又はそれらのブレンドを含む高分子基材である、請求項1に記載のバリアアセンブリ。
- 前記保護高分子層上に配置された、又は前記無機層上に配置された、又は前記保護高分子層及び前記無機層の両方上に配置された透明な導電性酸化物を更に備える、請求項2に記載のバリアアセンブリ。
- 前記透明な導電性酸化物が、酸化インジウムスズを含む、請求項18に記載のバリアアセンブリ。
- バリアアセンブリであって、
第1の表面を有する基材と、
前記第1の表面に隣接して配置された無機酸化物組成物と、を備え、前記無機酸化物組成物が、
第1の原子の第1の酸化物と、
第2の原子の第2の酸化物と、を含み、
前記第1の原子の前記第2の原子に対する原子比が、前記第1の表面に直交する方向にて変化する、バリアアセンブリ。 - 前記無機酸化物組成物に隣接して、前記基材の前記第1の表面の反対側に配置された保護分子層を更に備える、請求項20に記載のバリアアセンブリ。
- 前記第1の表面と前記無機酸化物組成物との間に配置された平滑化高分子層を更に備える、請求項20に記載のバリアアセンブリ。
- 前記無機酸化物組成物と前記保護高分子層との間に配置された第3の無機酸化物を更に備える、請求項21に記載のバリアアセンブリ。
- 前記第1の原子の前記酸化物、前記第2の原子の前記酸化物、及び前記第3の無機酸化物が、酸化ケイ素又は酸化アルミニウムを含む、請求項23に記載のバリアアセンブリ。
- バリアアセンブリの製造プロセスであって、
基材を提供することと、
前記基材上に平滑化高分子層を形成することと、
前記平滑化高分子層上に無機層を形成することと(前記無機層は、前記無機層の厚さ全体にわたって変化する無機組成物を含む)、
前記無機層上に保護高分子層を形成すること、とを含む、方法。 - 前記無機層の形成が、第1の対のスパッタリングターゲットのデュアル交流(AC)スパッタリングと、続く第2の対のスパッタリングターゲットのデュアルACスパッタリングと、を含む請求項25に記載のプロセス。
- 前記第1の対のスパッタイングターゲットが第1の原子組成物を含み、前記第2の対のスパッタリングターゲットが前記第1の原子組成物とは異なる第2の原子組成物を含む、請求項26に記載のプロセス。
- 前記第1の対のスパッタリングターゲットが、第1の気体雰囲気内に存在し、前記第2の対のスパッタリングターゲットが、第1の気体雰囲気とは異なる第2の気体雰囲気内に存在する、請求項26に記載のプロセス。
- 前記第1の原子組成物及び前記第2の原子組成物が、IIA、IIIA、IVA、VA、VIA、VIIA、IB、若しくはIIB族の原子、IIIB、IVB、若しくはVB族の金属、希土類金属、又はそれらの組み合わせを含む、請求項27に記載のプロセス。
- 前記基材がロール上に提供され、前記形成工程が、前記基材が展開されるにつれて、順次連続的に行われる、請求項25に記載のプロセス。
- 請求項1に記載のバリアアセンブリを備える、光起電デバイス。
- 請求項1に記載のバリアアセンブリを備える、ディスプレーデバイス。
- 請求項1に記載のバリアアセンブリを備える、固体照明デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11528608P | 2008-11-17 | 2008-11-17 | |
US61/115,286 | 2008-11-17 | ||
PCT/US2009/062944 WO2010056559A2 (en) | 2008-11-17 | 2009-11-02 | Gradient composition barrier |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012509203A true JP2012509203A (ja) | 2012-04-19 |
JP2012509203A5 JP2012509203A5 (ja) | 2012-12-20 |
Family
ID=42170639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011536382A Pending JP2012509203A (ja) | 2008-11-17 | 2009-11-02 | 傾斜組成物バリア |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110223434A1 (ja) |
EP (1) | EP2358529A4 (ja) |
JP (1) | JP2012509203A (ja) |
KR (1) | KR20110087318A (ja) |
CN (1) | CN102216071A (ja) |
TW (1) | TW201035343A (ja) |
WO (1) | WO2010056559A2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014126037A1 (ja) * | 2013-02-12 | 2014-08-21 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子及び照明装置 |
JP2017136850A (ja) * | 2012-09-21 | 2017-08-10 | アップル インコーポレイテッド | サファイア上での撥油性コーティング |
WO2018021021A1 (ja) * | 2016-07-28 | 2018-02-01 | コニカミノルタ株式会社 | ガスバリア性膜、これを用いたガスバリア性フィルム、およびこれらを用いた電子デバイス、ならびにガスバリア性膜の製造方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011139573A2 (en) | 2010-04-28 | 2011-11-10 | 3M Innovative Properties Company | Silicone-based material |
KR20130096161A (ko) | 2010-04-28 | 2013-08-29 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 중합체 코팅용 나노실리카-기반 프라이머를 포함하는 물품 및 방법 |
US9285584B2 (en) | 2010-10-06 | 2016-03-15 | 3M Innovative Properties Company | Anti-reflective articles with nanosilica-based coatings and barrier layer |
US20130323519A1 (en) * | 2011-01-31 | 2013-12-05 | 3M Innovative Properties Company | Coatings for barrier films and methods of making and using the same |
JP5741220B2 (ja) * | 2011-05-30 | 2015-07-01 | 大日本印刷株式会社 | ガスバリアフィルムの製造方法及び製造装置 |
US20150303336A1 (en) * | 2012-02-10 | 2015-10-22 | Arkema Inc. | Weatherable composite for flexible thin film photovoltaic and light emitting diode devices |
BR112015002685A2 (pt) * | 2012-08-08 | 2017-07-04 | 3M Innovative Properties Co | revestimentos para filmes de barreira e métodos para produzir e usar os mesmos. |
KR102126719B1 (ko) | 2012-08-08 | 2020-06-25 | 쓰리엠 이노베이티브 프로퍼티즈 캄파니 | 배리어 필름 구조물 및 이의 제조방법 |
US10784455B2 (en) * | 2012-08-08 | 2020-09-22 | 3M Innovative Properties Company | Coatings for barrier films and methods of making and using the same |
EP2882759B1 (en) | 2012-08-08 | 2017-04-19 | 3M Innovative Properties Company | Diurethane (meth)acrylate-silane compositions and articles including the same |
WO2014025383A1 (en) * | 2012-08-08 | 2014-02-13 | 3M Innovative Properties Company | Photovoltaic devices with encapsulating barrier film |
CN103904242A (zh) * | 2012-12-25 | 2014-07-02 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
CN104037332A (zh) * | 2013-03-07 | 2014-09-10 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
EP3024883A1 (en) | 2013-07-24 | 2016-06-01 | 3M Innovative Properties Company | Adhesive barrier film construction |
US20150349295A1 (en) * | 2014-05-30 | 2015-12-03 | Samsung Sdi Co., Ltd. | Gas permeation multilayer barrier with tunable index decoupling layers |
US10982064B2 (en) | 2016-03-25 | 2021-04-20 | 3M Innovative Properties Company | Multilayer barrier films |
KR20180005772A (ko) * | 2016-07-06 | 2018-01-17 | 삼성디스플레이 주식회사 | 유기발광 표시장치 |
KR102469745B1 (ko) | 2017-10-23 | 2022-11-23 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5133779A (en) * | 1974-09-17 | 1976-03-23 | Victor Company Of Japan | Jochakumakuso no sekisojochakuhoho |
JPH06305069A (ja) * | 1993-04-23 | 1994-11-01 | Toyo Ink Mfg Co Ltd | 透明導電性フィルム |
JPH10128901A (ja) * | 1996-10-25 | 1998-05-19 | Toppan Printing Co Ltd | 包装用フィルム |
JP2004351832A (ja) * | 2003-05-30 | 2004-12-16 | Toppan Printing Co Ltd | 透明ガスバリア積層フィルム |
JP2006289627A (ja) * | 2005-04-06 | 2006-10-26 | Fuji Photo Film Co Ltd | ガスバリアフィルムとそれを用いた有機デバイス |
JP2007168882A (ja) * | 2005-12-26 | 2007-07-05 | Toppan Printing Co Ltd | ガスバリア性プラスチック容器 |
JP2008520477A (ja) * | 2004-11-15 | 2008-06-19 | ゼネラル・エレクトリック・カンパニイ | 高保全性保護被膜 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5097800A (en) * | 1983-12-19 | 1992-03-24 | Spectrum Control, Inc. | High speed apparatus for forming capacitors |
US4842893A (en) * | 1983-12-19 | 1989-06-27 | Spectrum Control, Inc. | High speed process for coating substrates |
US5018048A (en) * | 1983-12-19 | 1991-05-21 | Spectrum Control, Inc. | Miniaturized monolithic multi-layer capacitor and apparatus and method for making |
US5032461A (en) * | 1983-12-19 | 1991-07-16 | Spectrum Control, Inc. | Method of making a multi-layered article |
US5125138A (en) * | 1983-12-19 | 1992-06-30 | Spectrum Control, Inc. | Miniaturized monolithic multi-layer capacitor and apparatus and method for making same |
US4722515A (en) * | 1984-11-06 | 1988-02-02 | Spectrum Control, Inc. | Atomizing device for vaporization |
EP0242460A1 (en) * | 1985-01-18 | 1987-10-28 | SPECTRUM CONTROL, INC. (a Pennsylvania corporation) | Monomer atomizer for vaporization |
US4954371A (en) * | 1986-06-23 | 1990-09-04 | Spectrum Control, Inc. | Flash evaporation of monomer fluids |
US5462779A (en) * | 1992-10-02 | 1995-10-31 | Consorzio Ce.Te.V. Centro Tecnologie Del Vuoto | Thin film multilayer structure as permeation barrier on plastic film |
JP2825736B2 (ja) * | 1993-07-30 | 1998-11-18 | 京セラ株式会社 | 誘電体磁器組成物および半導体素子収容用パッケージ |
US5440446A (en) * | 1993-10-04 | 1995-08-08 | Catalina Coatings, Inc. | Acrylate coating material |
SK283289B6 (sk) * | 1993-10-04 | 2003-05-02 | Presstek, Inc. (A Delaware Corporation) | Spôsob prípravy obaleného substrátu bariérovým filmom |
US6083628A (en) * | 1994-11-04 | 2000-07-04 | Sigma Laboratories Of Arizona, Inc. | Hybrid polymer film |
US6045864A (en) * | 1997-12-01 | 2000-04-04 | 3M Innovative Properties Company | Vapor coating method |
DE19956206A1 (de) * | 1999-09-23 | 2001-03-29 | Andreas Mucha | Dekoratives Schutzschichtsystem |
US6413645B1 (en) * | 2000-04-20 | 2002-07-02 | Battelle Memorial Institute | Ultrabarrier substrates |
AU2002305393A1 (en) * | 2001-05-04 | 2002-11-18 | General Atomics | O2 and h2o barrier material |
US6743488B2 (en) * | 2001-05-09 | 2004-06-01 | Cpfilms Inc. | Transparent conductive stratiform coating of indium tin oxide |
US6888305B2 (en) * | 2001-11-06 | 2005-05-03 | Universal Display Corporation | Encapsulation structure that acts as a multilayer mirror |
US7015640B2 (en) * | 2002-09-11 | 2006-03-21 | General Electric Company | Diffusion barrier coatings having graded compositions and devices incorporating the same |
US7449246B2 (en) * | 2004-06-30 | 2008-11-11 | General Electric Company | Barrier coatings |
US7018713B2 (en) * | 2003-04-02 | 2006-03-28 | 3M Innovative Properties Company | Flexible high-temperature ultrabarrier |
JP2004322489A (ja) * | 2003-04-25 | 2004-11-18 | Pioneer Electronic Corp | ガスバリア基材およびその製造方法 |
WO2005063646A1 (en) * | 2003-12-22 | 2005-07-14 | Cardinal Cg Company | Graded photocatalytic coatings |
JP4531404B2 (ja) * | 2004-01-13 | 2010-08-25 | 財団法人電力中央研究所 | 耐環境性皮膜構造体及びセラミック構造物 |
US8500965B2 (en) * | 2004-05-06 | 2013-08-06 | Ppg Industries Ohio, Inc. | MSVD coating process |
US20070020451A1 (en) * | 2005-07-20 | 2007-01-25 | 3M Innovative Properties Company | Moisture barrier coatings |
CA2626073A1 (en) * | 2005-11-01 | 2007-05-10 | Cardinal Cg Company | Reactive sputter deposition processes and equipment |
KR20090107882A (ko) * | 2008-04-10 | 2009-10-14 | 삼성전자주식회사 | 고정층을 포함하는 경사 조성 봉지 박막 및 그의 제조방법 |
-
2009
- 2009-11-02 EP EP09826562.2A patent/EP2358529A4/en not_active Withdrawn
- 2009-11-02 CN CN2009801459498A patent/CN102216071A/zh active Pending
- 2009-11-02 US US13/128,727 patent/US20110223434A1/en not_active Abandoned
- 2009-11-02 JP JP2011536382A patent/JP2012509203A/ja active Pending
- 2009-11-02 WO PCT/US2009/062944 patent/WO2010056559A2/en active Application Filing
- 2009-11-02 KR KR1020117013462A patent/KR20110087318A/ko not_active Application Discontinuation
- 2009-11-13 TW TW098138679A patent/TW201035343A/zh unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5133779A (en) * | 1974-09-17 | 1976-03-23 | Victor Company Of Japan | Jochakumakuso no sekisojochakuhoho |
JPH06305069A (ja) * | 1993-04-23 | 1994-11-01 | Toyo Ink Mfg Co Ltd | 透明導電性フィルム |
JPH10128901A (ja) * | 1996-10-25 | 1998-05-19 | Toppan Printing Co Ltd | 包装用フィルム |
JP2004351832A (ja) * | 2003-05-30 | 2004-12-16 | Toppan Printing Co Ltd | 透明ガスバリア積層フィルム |
JP2008520477A (ja) * | 2004-11-15 | 2008-06-19 | ゼネラル・エレクトリック・カンパニイ | 高保全性保護被膜 |
JP2006289627A (ja) * | 2005-04-06 | 2006-10-26 | Fuji Photo Film Co Ltd | ガスバリアフィルムとそれを用いた有機デバイス |
JP2007168882A (ja) * | 2005-12-26 | 2007-07-05 | Toppan Printing Co Ltd | ガスバリア性プラスチック容器 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017136850A (ja) * | 2012-09-21 | 2017-08-10 | アップル インコーポレイテッド | サファイア上での撥油性コーティング |
WO2014126037A1 (ja) * | 2013-02-12 | 2014-08-21 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子及び照明装置 |
JPWO2014126037A1 (ja) * | 2013-02-12 | 2017-02-02 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子及び照明装置 |
WO2018021021A1 (ja) * | 2016-07-28 | 2018-02-01 | コニカミノルタ株式会社 | ガスバリア性膜、これを用いたガスバリア性フィルム、およびこれらを用いた電子デバイス、ならびにガスバリア性膜の製造方法 |
CN109477202A (zh) * | 2016-07-28 | 2019-03-15 | 柯尼卡美能达株式会社 | 气体阻隔性膜、使用它的气体阻隔性膜材和使用它们的电子设备、以及气体阻隔性膜的制造方法 |
JPWO2018021021A1 (ja) * | 2016-07-28 | 2019-05-09 | コニカミノルタ株式会社 | ガスバリア性膜、これを用いたガスバリア性フィルム、およびこれらを用いた電子デバイス、ならびにガスバリア性膜の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2010056559A2 (en) | 2010-05-20 |
CN102216071A (zh) | 2011-10-12 |
KR20110087318A (ko) | 2011-08-02 |
WO2010056559A3 (en) | 2010-07-08 |
US20110223434A1 (en) | 2011-09-15 |
EP2358529A2 (en) | 2011-08-24 |
EP2358529A4 (en) | 2013-08-28 |
TW201035343A (en) | 2010-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2012509203A (ja) | 傾斜組成物バリア | |
EP2882591B1 (en) | Barrier film, method of making the barrier film, and articles including the barrier film | |
JP6148340B2 (ja) | ウレタン(複数)−(メタ)アクリレート(複数)−シランの(コ)ポリマー反応生成物を含む物品 | |
US20130302627A1 (en) | Vapor-deposited coating for barrier films and methods of making and using the same | |
US10804419B2 (en) | Photovoltaic devices with encapsulating barrier film | |
EP2882589B1 (en) | Coatings for barrier films and methods of making and using the same | |
US20130323519A1 (en) | Coatings for barrier films and methods of making and using the same | |
JP6660430B2 (ja) | 中間層の複合基板 | |
US10784455B2 (en) | Coatings for barrier films and methods of making and using the same | |
Jung et al. | Properties of indium tin oxide thin films prepared on the oxygen plasma-treated polycarbonate substrate | |
US20230174564A1 (en) | Fluorinated photoinitiators and fluorinated (co)polymer layers made using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121101 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121101 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130619 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130625 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130924 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131001 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131224 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140708 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20141007 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20141015 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150303 |