WO2014077213A1 - 複合基板 - Google Patents
複合基板 Download PDFInfo
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- WO2014077213A1 WO2014077213A1 PCT/JP2013/080399 JP2013080399W WO2014077213A1 WO 2014077213 A1 WO2014077213 A1 WO 2014077213A1 JP 2013080399 W JP2013080399 W JP 2013080399W WO 2014077213 A1 WO2014077213 A1 WO 2014077213A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 223
- 239000002131 composite material Substances 0.000 title claims abstract description 59
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims abstract description 42
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 238000001514 detection method Methods 0.000 claims description 2
- 238000004458 analytical method Methods 0.000 description 18
- 238000000921 elemental analysis Methods 0.000 description 16
- 239000000203 mixture Substances 0.000 description 15
- 230000007935 neutral effect Effects 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
- H10N30/508—Piezoelectric or electrostrictive devices having a stacked or multilayer structure adapted for alleviating internal stress, e.g. cracking control layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
Definitions
- the present invention relates to a composite substrate.
- SAW devices Surface acoustic wave devices
- a SAW element is manufactured, for example, using a composite substrate in which a piezoelectric substrate such as lithium tantalate (LT) or lithium niobate (LN) and a supporting substrate such as sapphire or silicon are joined.
- Piezoelectric substrates such as LT and LN are advantageous for achieving wide-band filter characteristics because of their large electromechanical coupling coefficient, but have the disadvantage of poor temperature stability.
- a supporting substrate such as sapphire or silicon is excellent in temperature stability, but has a disadvantage that the electromechanical coupling coefficient is small.
- a composite substrate in which both are joined has an advantage of having a large electromechanical coupling coefficient and excellent temperature stability.
- Patent Document 1 as such a composite substrate, after the bonding surface of a piezoelectric substrate and a support substrate is activated by an ion beam of inert gas or oxygen, a neutralization beam or plasma, both substrates are under normal temperature or 100 What was joined under the heat processing below ° C is disclosed. It is also disclosed that the bonding strength between both substrates is further improved by annealing at a relatively low temperature of 200 ° C. or lower after bonding. Furthermore, it is also disclosed that a composite substrate having an amorphous layer between the substrates is formed by activating the bonding surfaces of the two substrates with an irradiation beam of Ar atoms and then bonding the bonding surfaces of the two substrates. Such a composite substrate having an amorphous layer between the substrates is also disclosed in Patent Document 2.
- such a composite substrate may be subjected to, for example, a high temperature process step after being cut into chips.
- a high temperature process step after being cut into chips.
- the present invention has been made to solve such problems, and it is a main object of the present invention to provide a composite substrate in which a piezoelectric substrate and a support substrate are joined, with the bond strength between the two substrates sufficiently high.
- the composite substrate of the present invention is A composite substrate in which a piezoelectric substrate that is a single crystal substrate of lithium tantalate or lithium niobate and a support substrate that is a single crystal substrate of silicon are joined via an amorphous layer,
- the amorphous layer contains 3 atm% to 14 atm% of Ar.
- the bonding strength between both substrates can be sufficiently high.
- the amorphous layer containing 3 atm% to 14 atm% of Ar contributes to the bonding strength.
- the amorphous layer may be formed of only one layer, for example, or may be formed of two or more layers. If the entire amorphous layer contains 3 atm% to 14 atm% of Ar, the effect of sufficiently increasing the bonding strength can be obtained.
- the amorphous layer may contain 3 atm% to 10 atm% of Ar as a whole.
- the amorphous layer preferably has a thickness of 4 nm to 12 nm. This is because heat resistance of 400 ° C. or more can be secured.
- the amorphous layer has a first layer, a second layer, and a third layer from the piezoelectric substrate to the composite substrate, and the first layer is the second layer and the third layer.
- the third layer contains a larger amount of elements constituting the piezoelectric substrate than the three layers, and the third layer contains a larger amount of elements constituting the support substrate than the first layer and the second layer, and the second layer
- the layer preferably contains more Ar than the first layer and the third layer. This can further increase the bonding strength between the two substrates as compared to the case where the amorphous layer is formed of two layers.
- the third layer is preferably thicker than the first layer and the second layer.
- the third layer has a thicker structure than the first and second layers, so it is believed that this contributes to the improvement of the bonding strength.
- the third layer may be thicker than the sum of the thickness of the first layer and the thickness of the second layer.
- the Fe content is preferably equal to or less than the detection limit (less than 0.1 atm%). If Fe is mixed, it is not preferable because it may adversely affect devices such as SAW elements manufactured using a composite substrate. For example, when Fe is mixed, the electric field may leak and energy may be dissipated.
- a single crystal substrate of lithium tantalate or lithium niobate is used as the piezoelectric substrate.
- the size of the piezoelectric substrate is not particularly limited, and for example, the diameter is 50 mm to 150 mm, and the thickness is 10 ⁇ m to 50 ⁇ m.
- a supporting substrate a single crystal silicon substrate is used.
- the size of the supporting substrate is not particularly limited, and for example, the diameter is 50 mm to 150 mm, and the thickness is 100 ⁇ m to 500 ⁇ m.
- the amorphous layer preferably has a first layer, a second layer and a third layer from the piezoelectric substrate to the composite substrate. In this case, the first to third layers all contain Ar.
- the first layer contains more elements (Ta, Nb, etc.) constituting the piezoelectric substrate than the second layer and the third layer, and the third layer has the supporting substrate compared to the first layer and the second layer.
- the second layer contains a large amount of Ar as compared with the first layer and the third layer.
- the process for producing the composite substrate of the present invention is (A) preparing a piezoelectric substrate which is a single crystal substrate of lithium tantalate or lithium niobate, and a supporting substrate which is a single crystal substrate of silicon; (B) irradiating a bonding surface of the piezoelectric substrate and a bonding surface of the support substrate with an Ar neutral atom beam in vacuum; (C) cooling the piezoelectric substrate and the support substrate; (D) bringing the beam-irradiated surface of the piezoelectric substrate into contact with the beam-irradiated surface of the support substrate and pressing the two substrates together; (E) polishing the piezoelectric substrate to a predetermined thickness after bonding, and annealing at a temperature exceeding 200 ° C .; Is included.
- the above-mentioned composite substrate of the present invention can be produced relatively easily.
- the piezoelectric substrate for example, a 36 ° rotated Y cut X propagation LT substrate, a 42 ° rotated Y cut X propagation LT substrate, an X cut 12.2.2 rotated Y propagation LT substrate, a 127.86 ° rotated Y
- a supporting substrate for example, a single crystal Si substrate manufactured by a Czochralski method or a floating zone method is prepared.
- an Ar neutral atom beam is used.
- An Ar ion beam may be used instead of the Ar neutral atom beam.
- it is preferable to use an Ar neutral atom beam because there is a possibility that the material of the vacuum chamber (for example, Fe, Cr, etc.) may be mixed into the bonding surface when using an Ar ion beam.
- the material of the vacuum chamber for example, Fe, Cr, etc.
- the piezoelectric substrate and the support substrate are cooled.
- the two substrates are bonded in a state of large thermal expansion difference, and therefore, they are easily peeled off after bonding. It is preferable to cool the piezoelectric substrate and the support substrate to 20 to 50.degree. C., and more preferably to 20 to 30.degree.
- the beam irradiation surface of the piezoelectric substrate and the beam irradiation surface of the support substrate are brought into contact with each other and pressed to bond the two substrates.
- the pressure at the time of pressurization may be appropriately set in consideration of the size of the substrate and the like.
- the piezoelectric substrate is polished to a predetermined thickness (for example, 10 to 50 ⁇ m), and then annealing is performed at a temperature exceeding 200 ° C. This reduces the occurrence of thermal stress. In addition, the bonding strength of both substrates is also improved.
- the annealing temperature is preferably 240 to 280 ° C., more preferably 250 to 270 ° C.
- annealing is preferably performed at a temperature of 80 ° C. or higher (preferably, a temperature of 80 to 110 ° C.) after polishing and before polishing. This will further improve the bonding strength.
- FIG. 6 is a graph of EDX of an LT substrate constituting the composite substrate of Example 1.
- 6 is a graph of EDX of an amorphous layer first layer constituting the composite substrate of Example 1.
- 6 is a graph of EDX of an amorphous layer second layer constituting the composite substrate of Example 1.
- 6 is a graph of EDX of the amorphous layer third layer constituting the composite substrate of Example 1.
- 6 is a graph of EDX of a Si substrate constituting the composite substrate of Example 1.
- 16 is a graph of EDX of LT substrate constituting the composite substrate of Comparative Example 3.
- the graph of EDX of the amorphous layer 2nd layer which comprises the compound substrate of comparative example 3. 12 is a graph of EDX of a Si substrate constituting the composite substrate of Comparative Example 3. Explanatory drawing of a crack opening method.
- Example 1 A LT substrate having a thickness of 230 ⁇ m and a mirror surface on both sides, and a Si substrate having a thickness of 250 ⁇ m on both surface were prepared.
- a 42 ° rotated Y-cut X-propagated LT substrate (42 ° Y-X LT) rotated by 42 ° from the Y axis to the Z axis around the X axis that is the propagation direction of the surface acoustic wave was used. .
- the bonding surface of each substrate was cleaned to remove surface contamination, and then introduced into a vacuum chamber.
- each substrate was irradiated with a high-speed Ar neutral atom beam (accelerating voltage: 1 kV, Ar flow rate: 60 sccm) for 70 seconds in a vacuum of 10 ⁇ 6 Pa or so.
- Ar neutral atom beam accelerating voltage: 1 kV, Ar flow rate: 60 sccm
- each substrate was cooled to 26-28 ° C. by leaving it for 10 minutes.
- the beam irradiation surface of the LT substrate and the beam irradiation surface of the Si substrate were brought into contact with each other, the two substrates were bonded by pressing at 4.90 kN for 2 minutes.
- the LT substrate was polished to a thickness of 30 ⁇ m and then annealed at 260 ° C. to obtain a composite substrate.
- the composite substrate was cut and the cross section was observed with a TEM (transmission electron microscope).
- the results are shown in FIG. From FIG. 1, the thickness of the amorphous layer was 7 nm.
- the amorphous layer had a first layer, a second layer, and a third layer from the LT substrate to the Si substrate. Also, the third layer was thicker than the first and second layers.
- Composition analysis and elemental analysis were performed by EDX on the LT substrate, the first to third layers constituting the amorphous layer, and the Si substrate. The results of compositional analysis are shown in FIGS. In FIGS. 2 to 6, “point n” (n is an integer of 1 to 5) indicates the position of “* n” in FIG. This point is the same as in Table 1 described later.
- Example 2 A composite substrate was produced in the same manner as in Example 1 except that a high-speed Ar neutral atom beam was irradiated for 20 seconds, and a part of the composite substrate was cut and a cross section was observed by TEM. As a result, the thickness of the amorphous layer was about 4 nm.
- the amorphous layer had a first layer, a second layer, and a third layer from the LT substrate to the Si substrate. The third layer was thicker than the first and second layers.
- Composition analysis and elemental analysis were performed by EDX on the LT substrate, the first to third layers constituting the amorphous layer, and the Si substrate. Ar was detected in all of the first to third layers as a result of composition analysis.
- the entire amorphous layer contained 3.0 atm% of Ar atoms.
- the first layer contains a larger amount of the element (Ta) constituting the piezoelectric substrate than the second and third layers, and the third layer is an element constituting the support substrate compared to the first and second layers. It contained a large amount of (Si).
- Example 3 A composite substrate was produced in the same manner as in Example 1 except that the high-speed Ar neutral atom beam was irradiated for 265 seconds, and a part thereof was cut and a cross section was observed by TEM. As a result, the thickness of the amorphous layer was about 12 nm.
- the amorphous layer had a first layer, a second layer, and a third layer from the LT substrate to the Si substrate. The third layer was thicker than the first and second layers.
- Composition analysis and elemental analysis were performed by EDX on the LT substrate, the first to third layers constituting the amorphous layer, and the Si substrate. Ar was detected in all of the first to third layers as a result of composition analysis.
- the entire amorphous layer contained 14 atm% of Ar atoms.
- the first layer contains a larger amount of the element (Ta) constituting the piezoelectric substrate than the second and third layers, and the third layer is an element constituting the support substrate compared to the first and second layers. It contained a large amount of (Si).
- Example 4 A portion of the film was cut in the same manner as in Example 1 except that the Ar ion beam was irradiated instead of the Ar neutral atom beam, and the cross section was observed by TEM. As a result, the thickness of the amorphous layer was 8 nm.
- the amorphous layer had a first layer and a second layer from the LT substrate toward the Si substrate. Composition analysis and elemental analysis were performed by EDX on the LT substrate, and the first layer, the second layer, and the Si substrate constituting the amorphous layer. As a result of composition analysis, Ar was detected in both the first layer and the second layer.
- Example 5 A composite substrate was produced in the same manner as in Example 1 except that the LT substrate was replaced with the LN substrate, and a part of the composite substrate was cut and a cross section was observed with a TEM. As a result, the thickness of the amorphous layer was about 5 nm.
- the amorphous layer had a first layer, a second layer, and a third layer from the LN substrate to the Si substrate. The third layer was thicker than the first and second layers.
- Composition analysis and elemental analysis were performed by EDX on the LN substrate, the first to third layers constituting the amorphous layer, and the Si substrate. Ar was detected in all of the first to third layers as a result of composition analysis.
- Comparative Example 1 A composite substrate was produced in the same manner as in Example 1 except that a high-speed Ar neutral atom beam was irradiated for 15 seconds, and a part thereof was cut and a cross section was observed by TEM. As a result, the thickness of the amorphous layer was about 2.5 nm.
- the amorphous layer had a first layer, a second layer, and a third layer from the LT substrate to the Si substrate. The third layer was thicker than the first and second layers.
- Composition analysis and elemental analysis were performed by EDX on the LT substrate, the first to third layers constituting the amorphous layer, and the Si substrate. Ar was detected in all of the first to third layers as a result of composition analysis.
- Comparative Example 2 A composite substrate was produced in the same manner as in Example 1 except that the high-speed Ar neutral atom beam was irradiated for 600 seconds, and a part of the composite substrate was cut and a cross section was observed with a TEM. As a result, the thickness of the amorphous layer was about 15 nm.
- the amorphous layer had a first layer, a second layer, and a third layer from the LT substrate to the Si substrate. The third layer was thicker than the first and second layers.
- Composition analysis and elemental analysis were performed by EDX on the LT substrate, the first to third layers constituting the amorphous layer, and the Si substrate. Ar was detected in all of the first to third layers as a result of composition analysis.
- Comparative Example 3 A composite substrate in which an LT substrate and a Si substrate were joined via two amorphous layers was obtained, and in the same manner as in Example 1, a part thereof was cut and a cross section was observed with a TEM. The results are shown in FIG. From FIG. 7, the thickness of the amorphous layer was 5 nm. The amorphous layer had a first layer and a second layer from the LT substrate toward the Si substrate. Composition analysis and elemental analysis were performed by EDX on the LT substrate, and the first layer, the second layer, and the Si substrate constituting the amorphous layer. The results of compositional analysis are shown in FIGS. As apparent from the result of composition analysis, Ar was detected in both the first layer and the second layer.
- the amorphous layer has the first layer, the second layer, and the third layer from the LT substrate to the Si substrate, and the third layer is more than the first layer or the second layer. It was thick. Further, the atm% of the Ar atom was higher in the second layer than in the first and third layers.
- Fe derived from the vacuum chamber was mixed in the amorphous layer by 30 atm% or more.
- the amorphous layer was formed to be divided into two layers.
- Example 6 a bonded substrate before the polishing process in Example 1 was heated (annealed) at 80 ° C. for 72 hours was used as a bonded substrate of Example 6.
- the bonding strength of the bonded substrate of this Example 6 was also evaluated by the same method. The bonding strength was measured at a plurality of locations for one bonded substrate. The results are shown in Table 3. As apparent from Table 3, it was found that the bonding strength of Examples 1 to 5 is higher than that of Comparative Examples 1 to 3, and in particular, the bonding strength of Examples 1 to 3 is high. Further, it was found that Example 6 had a higher bonding strength than Example 1.
- the present invention is applicable to acoustic wave devices such as SAW elements.
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Abstract
Description
タンタル酸リチウム又はニオブ酸リチウムの単結晶基板である圧電基板と、シリコンの単結晶基板である支持基板とが、アモルファス層を介して接合された複合基板であって、
前記アモルファス層は、Arを3atm%~14atm%含有するものである。
(a)タンタル酸リチウム又はニオブ酸リチウムの単結晶基板である圧電基板と、シリコンの単結晶基板である支持基板とを用意する工程と、
(b)前記圧電基板の接合面及び前記支持基板の接合面に真空中でAr中性原子ビームを照射する工程と、
(c)前記圧電基板及び前記支持基板を冷却する工程と、
(d)前記圧電基板のビーム照射面と前記支持基板のビーム照射面とを接触させ、加圧して両基板を接合する工程と、
(e)接合後、前記圧電基板を所定厚さになるまで研磨加工し、その後200℃を超える温度でアニールを行う工程と、
を含むものである。
両面が鏡面の厚み230μmのLT基板と、両面が鏡面の厚み250μmのSi基板を用意した。LT基板としては、弾性表面波の伝搬方向であるX軸を中心に、Y軸からZ軸に42°回転した、42°回転YカットX伝搬LT基板(42°Y-X LT)を用いた。それぞれの基板の接合面を洗浄して表面の汚れを取った後、真空チャンバーに導入した。10-6Pa台の真空中で、それぞれの基板の接合面に高速Ar中性原子ビーム(加速電圧1kV、Ar流量60sccm)を70sec間照射した。照射後、10分間そのまま放置して各基板を26~28℃に冷却した。ついでLT基板のビーム照射面とSi基板のビーム照射面とを接触させた後、4.90kNで2分間加圧して両基板を接合した。接合後、LT基板を厚みが30μmになるまで研磨加工し、その後260℃でアニールを行い、複合基板を得た。
高速Ar中性原子ビームを20sec間照射した以外は、実施例1と同様にして複合基板を作製し、その一部を切断しTEMで断面の観察を行った。その結果、アモルファス層の厚さは約4nmであった。アモルファス層は、LT基板からSi基板に向かって第1層、第2層、第3層を有していた。第3層は、第1層や第2層よりも厚かった。LT基板、アモルファス層を構成する第1~第3層及びSi基板について、EDXで組成分析、元素分析を行った。組成分析の結果、第1~第3層のいずれにもArが検出された。また、元素分析の結果、Ar原子は、第1層には1.5atm%、第2層には3.9atm%、第3層には0.7atm%含まれていた。また、Fe原子は、すべてにおいて全く検出されなかった。なお、アモルファス層全体では、Ar原子は3.0atm%含まれていた。第1層は、第2層及び第3層に比べて圧電基板を構成する元素(Ta)を多く含有し、第3層は、第1層及び第2層に比べて支持基板を構成する元素(Si)を多く含有していた。また、実施例1と同様にして2mm角のチップをホットプレート上で加熱したところ、400℃直後でLT基板が剥離した。
高速Ar中性原子ビームを265sec間照射した以外は、実施例1と同様にして複合基板を作製し、その一部を切断しTEMで断面の観察を行った。その結果、アモルファス層の厚さは約12nmであった。アモルファス層は、LT基板からSi基板に向かって第1層、第2層、第3層を有していた。第3層は、第1層や第2層よりも厚かった。LT基板、アモルファス層を構成する第1~第3層及びSi基板について、EDXで組成分析、元素分析を行った。組成分析の結果、第1~第3層のいずれにもArが検出された。また、元素分析の結果、Ar原子は、第1層には10.8atm%、第2層には16.3atm%、第3層には8.4atm%含まれていた。また、Fe原子は、すべてにおいて全く検出されなかった。なお、アモルファス層全体では、Ar原子は14atm%含まれていた。第1層は、第2層及び第3層に比べて圧電基板を構成する元素(Ta)を多く含有し、第3層は、第1層及び第2層に比べて支持基板を構成する元素(Si)を多く含有していた。また、実施例1と同様にして2mm角のチップをホットプレート上で加熱したところ、400℃直後でLT基板が剥離した。
Ar中性原子ビームの代わりにArイオンビームを照射した以外は、実施例1と同様にしてその一部を切断しTEMで断面の観察を行った。その結果、アモルファス層の厚さは8nmであった。アモルファス層は、LT基板からSi基板に向かって第1層、第2層を有していた。LT基板、アモルファス層を構成する第1層、第2層及びSi基板について、EDXで組成分析、元素分析を行った。組成分析の結果、第1層、第2層のいずれにもArが検出された。また、元素分析の結果、Ar原子は、第1層には3atm%、第2層には4atm%含まれていた。また、Fe原子は、すべてにおいて全く検出されなかった。なお、アモルファス層全体では、Ar原子は5atm%含まれていた。また、この複合基板から切り出した2mm角のチップをホットプレート上で加熱したところ、350℃でLT基板が剥離した。
LT基板からLN基板に代えた以外は、実施例1と同様にして複合基板を作製し、その一部を切断しTEMで断面の観察を行った。その結果、アモルファス層の厚さは約5nmであった。アモルファス層は、LN基板からSi基板に向かって第1層、第2層、第3層を有していた。第3層は、第1層や第2層よりも厚かった。LN基板、アモルファス層を構成する第1~第3層及びSi基板について、EDXで組成分析、元素分析を行った。組成分析の結果、第1~第3層のいずれにもArが検出された。また、元素分析の結果、Ar原子は、第1層には3.1atm%、第2層には6.3atm%、第3層には1.6atm%含まれていた。また、Fe原子は、すべてにおいて全く検出されなかった。なお、アモルファス層全体では、Ar原子は5.4atm%含まれていた。第1層は、第2層及び第3層に比べて圧電基板を構成する元素(Nb)を多く含有し、第3層は、第1層及び第2層に比べて支持基板を構成する元素(Si)を多く含有していた。また、実施例1と同様にして2mm角のチップをホットプレート上で加熱したところ、400℃直後でLN基板が剥離した。
高速Ar中性原子ビームを15sec間照射した以外は、実施例1と同様にして複合基板を作製し、その一部を切断しTEMで断面の観察を行った。その結果、アモルファス層の厚さは約2.5nmであった。アモルファス層は、LT基板からSi基板に向かって第1層、第2層、第3層を有していた。第3層は、第1層や第2層よりも厚かった。LT基板、アモルファス層を構成する第1~第3層及びSi基板について、EDXで組成分析、元素分析を行った。組成分析の結果、第1~第3層のいずれにもArが検出された。また、元素分析の結果、Ar原子は、第1層には1atm%、第2層には3atm%、第3層には0.4atm%含まれていた。また、Fe原子は、すべてにおいて全く検出されなかった。なお、アモルファス層全体では、Ar原子は2atm%含まれていた。また、実施例1と同様にして2mm角のチップをホットプレート上で加熱したところ、300℃直後でLT基板が剥離した。
高速Ar中性原子ビームを600sec間照射した以外は、実施例1と同様にして複合基板を作製し、その一部を切断しTEMで断面の観察を行った。その結果、アモルファス層の厚さは約15nmであった。アモルファス層は、LT基板からSi基板に向かって第1層、第2層、第3層を有していた。第3層は、第1層や第2層よりも厚かった。LT基板、アモルファス層を構成する第1~第3層及びSi基板について、EDXで組成分析、元素分析を行った。組成分析の結果、第1~第3層のいずれにもArが検出された。また、元素分析の結果、Ar原子は、第1層には15atm%、第2層には21atm%、第3層には13atm%含まれていた。また、Fe原子は、すべてにおいて全く検出されなかった。なお、アモルファス層全体では、Ar原子は18atm%含まれていた。また、実施例1と同様にして2mm角のチップをホットプレート上で加熱したところ、300℃直後でLT基板が剥離した。
LT基板とSi基板とが2層のアモルファス層を介して接合された複合基板を入手し、実施例1と同様にしてその一部を切断しTEMで断面の観察を行った。その結果を図7に示す。図7からアモルファス層の厚さは5nmであった。アモルファス層は、LT基板からSi基板に向かって第1層、第2層を有していた。LT基板、アモルファス層を構成する第1層、第2層及びSi基板について、EDXで組成分析、元素分析を行った。組成分析の結果を図8~図11に示す。組成分析の結果から明らかなように、第1層、第2層のいずれにもArが検出された。また、元素分析の結果を表2に示す。表2から明らかなように、Ar原子は、第1層には1atm%、第2層には2atm%含まれていた。また、Fe原子は、すべてにおいて全く検出されなかった。なお、アモルファス層全体では、Ar原子は2atm%含まれていた。また、この複合基板から切り出した2mm角のチップをホットプレート上で加熱したところ、280℃でLT基板が剥離した。
実施例1~5及び比較例1~3において、圧電基板と支持基板とを接合した貼り合わせ基板(研磨加工を行う前のもの)の接合強度を評価した。接合強度は、下記に示すクラックオープニング法(図12参照)により評価した。貼り合わせ基板の圧電基板と支持基板との接合界面に、厚み(tb)が100μmのブレードを挿入し、両基板の外周部を機械的に剥離させた。ブレード先端から最も剥離が進展した箇所までの距離(L)を測長し、以下の式を用いて表面エネルギー(γ)を算出し、これを接合強度とした。また、実施例1において研磨加工を行う前の貼り合わせ基板を80℃、72時間加熱(アニール)したものを、実施例6の貼り合わせ基板とした。この実施例6の貼り合わせ基板の接合強度も同じ手法により評価した。なお、1つの貼り合わせ基板につき、複数箇所で接合強度を測定した。その結果を表3に示す。表3から明らかなように、実施例1~5は比較例1~3に比べて接合強度が高く、特に実施例1~3,5が接合強度が高いことがわかった。また、実施例6は、実施例1よりも更に接合強度が高いことがわかった。
L:ブレード先端から最も剥離が進展した箇所までの距離
tw1:圧電基板の厚み
tw2:支持基板の厚み
E1:圧電基板のヤング率
E2:支持基板のヤング率
tb:ブレードの厚み
Claims (5)
- タンタル酸リチウム又はニオブ酸リチウムの単結晶基板である圧電基板と、シリコンの単結晶基板である支持基板とが、アモルファス層を介して接合された複合基板であって、
前記アモルファス層は、Arを3atm%~14atm%含有する、
複合基板。 - 前記アモルファス層は、厚さが4nm~12nmである、
請求項1に記載の複合基板。 - 前記アモルファス層は、前記圧電基板から前記複合基板に向かって第1層、第2層及び第3層を有し、前記第1層は、前記第2層及び前記第3層に比べて前記圧電基板を構成する元素を多く含有し、前記第3層は、前記第1層及び前記第2層に比べて前記支持基板を構成する元素を多く含有し、前記第2層は、前記第1層及び前記第3層に比べてArを多く含有する、
請求項1又は2に記載の複合基板。 - 前記第3層は、前記第1層及び前記第2層に比べて厚さが厚い、
請求項3に記載の複合基板。 - Feの含有率が検出限界以下である、
請求項1~4のいずれか1項に記載の複合基板。
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CN103947110A (zh) | 2014-07-23 |
EP2787638A1 (en) | 2014-10-08 |
US8907547B2 (en) | 2014-12-09 |
JP5583876B1 (ja) | 2014-09-03 |
KR101511001B1 (ko) | 2015-04-10 |
EP2787638A4 (en) | 2015-07-08 |
US20140210317A1 (en) | 2014-07-31 |
JPWO2014077213A1 (ja) | 2017-01-05 |
KR20140095048A (ko) | 2014-07-31 |
EP2787638B1 (en) | 2016-03-30 |
CN103947110B (zh) | 2016-08-17 |
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