WO2019142483A1 - 圧電性材料基板と支持基板との接合体およびその製造方法 - Google Patents
圧電性材料基板と支持基板との接合体およびその製造方法 Download PDFInfo
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- WO2019142483A1 WO2019142483A1 PCT/JP2018/042630 JP2018042630W WO2019142483A1 WO 2019142483 A1 WO2019142483 A1 WO 2019142483A1 JP 2018042630 W JP2018042630 W JP 2018042630W WO 2019142483 A1 WO2019142483 A1 WO 2019142483A1
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- piezoelectric material
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- 239000000758 substrate Substances 0.000 title claims abstract description 131
- 239000000463 material Substances 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 49
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims abstract description 17
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 16
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052863 mullite Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 238000010897 surface acoustic wave method Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 238000001994 activation Methods 0.000 description 7
- 230000004913 activation Effects 0.000 description 7
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- 230000006866 deterioration Effects 0.000 description 5
- 238000000678 plasma activation Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000019687 Lamb Nutrition 0.000 description 1
- 229910003849 O-Si Inorganic materials 0.000 description 1
- 229910003872 O—Si Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- -1 sialon Chemical compound 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
Definitions
- the present invention relates to a bonded body of a piezoelectric material substrate and a support substrate and a method of manufacturing the same.
- an SOI substrate composed of a high resistance Si / SiO 2 thin film / Si thin film is widely used.
- Plasma activation is used to realize the SOI substrate. This is because bonding can be performed at a relatively low temperature (400 ° C.).
- a composite substrate composed of similar Si / SiO 2 thin film / piezoelectric thin film has been proposed (Patent Document 1).
- Patent Document 1 a piezoelectric material substrate made of lithium niobate or lithium tantalate and a silicon substrate provided with a silicon oxide layer are activated by ion implantation and then joined.
- Patent Document 2 describes that lithium tantalate is joined to ceramics containing sapphire, aluminum oxide, aluminum nitride, or silicon nitride as a main component by a plasma activation method through a silicon oxide layer. ing.
- Non-Patent Document 1 a lithium tantalate substrate and a silicon substrate provided with a silicon oxide layer are continuously irradiated with RIE (13.56 MHz) plasma of O 2 and microwave (2.45 GHz) plasma of N 2 in succession. Bonding is described.
- Non-patent Document 2 In plasma activated bonding of Si and SiO 2 / Si, sufficient bonding strength can be obtained by the formation of a Si—O—Si bond at the bonding interface. At the same time, Si is oxidized to SiO 2 to improve smoothness, and the above-mentioned bonding is promoted on the outermost surface (Non-patent Document 2).
- a piezoelectric material substrate such as lithium niobate or lithium tantalate is bonded to a silicon oxide layer on a silicon substrate and then thinned by polishing the piezoelectric material substrate, the damaged layer is removed by CMP. Device characteristics are not degraded. However, during the polishing process, a large shear stress is applied to the piezoelectric material substrate. Therefore, when attempting to process the piezoelectric material substrate thinly by polishing, there is a problem that the piezoelectric material substrate is peeled off from the silicon substrate during polishing. In addition, when the thickness of the piezoelectric material substrate is reduced by polishing, there is also a problem that the characteristics of the obtained bonded body are deteriorated. In particular, when the joined body is used as an elastic wave element, the characteristics (for example, the electromechanical coupling coefficient k2) as the elastic wave element may be reduced.
- the characteristics for example, the electromechanical coupling coefficient k2
- An object of the present invention is to bond a piezoelectric material substrate made of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate to a supporting substrate provided with a silicon oxide layer. In this case, while maintaining the bonding strength, the characteristic deterioration of the bonded body is suppressed.
- the present invention Support substrate, A piezoelectric material comprising a silicon oxide layer provided on the support substrate, and a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate provided on the silicon oxide layer A bonded body provided with a material substrate,
- the surface resistivity of the piezoelectric material substrate on the side of the silicon oxide layer is 1.7 ⁇ 10 15 ⁇ / ⁇ or more.
- a piezoelectric material substrate made of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate is bonded to a supporting substrate provided with a silicon oxide layer.
- the piezoelectric material substrate is irradiated with oxygen plasma at 150 ° C. or less with respect to the bonding surface of the piezoelectric material substrate to make the surface resistivity of the bonding surface 1.7 ⁇ 10 15 ⁇ / ⁇ or more.
- the bonding surface is bonded to the bonding surface of the silicon oxide layer.
- Non-patent Document 2 J. Applied Physics 113, 094905 (2013).
- the present inventor activates the bonding surface of the piezoelectric material substrate and the bonding surface of the silicon oxide layer by irradiating oxygen plasma for 30 minutes or more at 150 ° C. or less, and then activates the piezoelectric material substrate.
- the surface resistivity of the piezoelectric material substrate on the silicon oxide layer side was set to 1.7 ⁇ 10 15 ⁇ / ⁇ or more.
- the property deterioration (electromechanical coupling coefficient k2) of the joined body can be suppressed while actually maintaining the bonding strength between the piezoelectric material substrate and the support substrate, and the present invention has been achieved.
- (A) shows the piezoelectric material substrate 1, and (b) shows a state in which the bonding surface 1a of the piezoelectric material substrate 1 is activated to produce an activated surface 1c.
- (A) shows the state in which the silicon oxide layer 5 is formed on the surface of the support substrate 4, and (b) shows the state in which the silicon oxide layer 5 is surface activated.
- (A) shows the bonded body 7 obtained by directly bonding the piezoelectric material substrate 1 and the silicon oxide layer 5 on the support substrate 4, and (b) shows the piezoelectric material substrate 1 A of the bonded body 7. The state which grind
- a piezoelectric material substrate 1 having a pair of main surfaces 1a and 1b is prepared.
- 1a is a bonding surface.
- plasma is irradiated to the bonding surface 1a of the piezoelectric material substrate 1 as shown by arrow A to obtain a surface-activated bonding surface 1c.
- the silicon oxide layer 5 is formed on the surface 4 a of the support substrate 4. Then, as shown in FIG. 2B, the surface 5a of the silicon oxide layer 5 is irradiated with plasma as shown by arrow A to activate the surface and form an activated bonding surface 6.
- the activated bonding surface 1c on the piezoelectric material substrate 1 is brought into contact with the activated bonding surface 6 of the silicon oxide layer 5 on the support substrate 4; Direct bonding is performed to obtain a bonded body 7.
- an electrode may be provided on the piezoelectric material substrate 1.
- the main surface 1b of the piezoelectric material substrate 1 is processed to make the substrate 1 thinner and obtain a thinned piezoelectric material substrate 1A.
- 1 d is a processing surface.
- a predetermined electrode 8 is formed on the processing surface 1d of the piezoelectric material substrate 1A of the joined body 7A, whereby the elastic wave element 10 can be obtained.
- the material of the support substrate 4 is not particularly limited, it is preferably made of a material selected from the group consisting of silicon, quartz, sialon, mullite, sapphire and translucent alumina. By this, the frequency characteristic of elastic wave element 10 can be further improved.
- a silicon oxide layer 5 is formed on the support substrate 4.
- the method of forming the silicon oxide layer 5 is not limited, sputtering, chemical vapor deposition (CVD), and vapor deposition can be exemplified.
- the support substrate 4 is a silicon substrate, and in this case, the silicon oxide layer 5 can be formed by sputtering or ion implantation of oxygen on the surface of the silicon substrate, or heating in an oxidizing atmosphere.
- the thickness of the silicon oxide layer 5 is preferably 0.05 ⁇ m or more, more preferably 0.1 ⁇ m or more, and particularly preferably 0.2 ⁇ m or more.
- the thickness of the silicon oxide layer 5 is preferably 3 ⁇ m or less, preferably 2.5 ⁇ m or less, and more preferably 2.0 ⁇ m or less.
- the piezoelectric material substrate 1 used in the present invention is lithium tantalate (LT) single crystal, lithium niobate (LN) single crystal, lithium niobate-lithium tantalate solid solution. These are suitable as surface acoustic wave devices for high frequency and wide band frequency because they have high propagation velocity of elastic wave and large electromechanical coupling coefficient.
- the normal direction of the main surfaces 1a and 1b of the piezoelectric material substrate 1 is not particularly limited.
- the piezoelectric material substrate 1 is made of LT
- the X axis which is the propagation direction of surface acoustic waves, is centered It is preferable to use one having a direction rotated by 32-55 ° from the Y-axis to the Z-axis, or (180 °, 58-35 °, 180 °) in Euler angle display, because propagation loss is small.
- the piezoelectric material substrate 1 is made of LN
- the size of the piezoelectric material substrate is not particularly limited, and for example, the diameter is 100 to 200 mm, and the thickness is 0.15 to 1 ⁇ m.
- oxygen plasma is irradiated to the bonding surface 1a of the piezoelectric material substrate 1 at 150 ° C. or less to activate the bonding surface 1a.
- 100 Pa or less is preferable and, as for the pressure at the time of surface activation, 80 Pa or less is still more preferable.
- the atmosphere may be only oxygen, but may contain nitrogen gas in addition to oxygen.
- the temperature at the time of oxygen plasma irradiation shall be 150 degrees C or less. As a result, a bonded body 7 having high bonding strength and no deterioration of the piezoelectric material is obtained. From this point of view, the temperature at the time of oxygen plasma irradiation is set to 150 ° C. or less, More preferably, the temperature is 100 ° C. or less.
- the energy at the time of oxygen plasma irradiation is preferably 100 to 150 W. Further, the product of energy at the time of oxygen plasma irradiation and irradiation time is preferably 20 to 50 Wh. Moreover, it is preferable that the irradiation time of oxygen plasma is 30 minutes or more.
- the bonding surface 1a of the piezoelectric material substrate 1 and the bonding surface 5a of the silicon oxide layer 5 are planarized before the plasma processing.
- a method of planarizing each bonding surface 1a, 5a there are lap polishing, chemical mechanical polishing (CMP) and the like. Further, Ra ⁇ 1 nm is preferable for the flat surface, and 0.3 nm or less is more preferable.
- the surface resistivity of the piezoelectric material substrate 1 after oxygen plasma treatment is set to 1.7 ⁇ 10 15 ⁇ / ⁇ or more, but 2.8 ⁇ 10 15 ⁇ / ⁇ or more. It is further preferred that Since oxygen is taken into the piezoelectric material substrate 1, the surface resistivity measured at the bonding surface 1 a becomes large, so the surface resistivity is an index of oxygen uptake.
- the bonding strength of the bonded body can be maintained by setting the surface resistivity of the piezoelectric material substrate 1 after the oxygen plasma treatment to be 2.0 ⁇ 10 16 ⁇ / ⁇ or less. From this viewpoint, the surface resistivity of the piezoelectric material substrate 1 is more preferably 1.6 ⁇ 10 16 ⁇ / ⁇ or less. By so doing, it becomes easy to polish the piezoelectric material substrate 1.
- the bonding surface 5a of the silicon oxide layer 5 is also plasma treated. At this time, plasma such as oxygen and nitrogen can be used. Moreover, 150 degrees C or less is preferable and, as for the temperature at the time of a plasma processing, 100 degrees C or less is still more preferable.
- 100 Pa or less is preferable and, as for the pressure at the time of the plasma irradiation on the joint surface 5a of the silicon oxide layer 5, 80 Pa or less is still more preferable.
- the energy at this time is preferably 30 to 120 W.
- the product of energy at the time of plasma irradiation and irradiation time is preferably 1 Wh or less.
- the bonding surface 1c of the piezoelectric material substrate 1 and the bonding surface 6 of the silicon oxide layer 5 are brought into contact with each other and bonded. After that, it is preferable to improve the bonding strength by performing an annealing process.
- the temperature at the time of annealing treatment is preferably 100 ° C. or more and 300 ° C. or less.
- the bonded bodies 7 and 7A of the present invention can be suitably used for the elastic wave element 10.
- a surface acoustic wave device a Lamb wave element, a thin film resonator (FBAR), etc.
- FBAR thin film resonator
- a surface acoustic wave device has an input-side IDT (Interdigital Transducer) electrode (also referred to as a comb electrode, an interdigital electrode) for exciting surface acoustic waves and an output side for receiving surface acoustic waves on the surface of a piezoelectric material substrate.
- IDT Interdigital Transducer
- the propagated surface acoustic wave can be extracted as an electrical signal from the output IDT electrode provided in the propagation direction.
- the material constituting the electrode (electrode pattern) 8 on the piezoelectric material substrate 1A is preferably aluminum, an aluminum alloy, copper or gold, more preferably aluminum or an aluminum alloy.
- the aluminum alloy is preferably Al mixed with 0.3 to 5% by weight of Cu. In this case, Ti, Mg, Ni, Mo, or Ta may be used instead of Cu.
- a 42Y-cut LiTaO 3 substrate (piezoelectric material substrate) 1 having a thickness of 0.2 mm and mirror polished on both sides and a high resistance Si substrate (supporting substrate) 4 having a thickness of 0.5 mm are used.
- a silicon oxide layer 5 was formed to a thickness of 0.5 ⁇ m on the supporting substrate 4 by sputtering.
- the bonding surface 1a of the piezoelectric material substrate 1 and the bonding surface 5a of the silicon oxide layer 5 on the support substrate 4 were respectively cleaned and surface activated. Specifically, ultrasonic cleaning using pure water was performed, and the substrate surface was dried by spin drying. Next, the cleaned support substrate 4 was introduced into a plasma activation chamber, and the bonding surface 5a was activated at 30 ° C. with oxygen gas plasma. The piezoelectric material substrate 1 was similarly introduced into the plasma activation chamber, and the bonding surface 1a was surface activated at 30 ° C. with oxygen gas plasma. The same ultrasonic cleaning and spin drying as described above were performed again in order to remove particles attached during surface activation.
- the activation treatment time was changed as shown in Table 1.
- the plasma irradiation energy at the time of activation processing is 150 W.
- the surface resistivity of the piezoelectric material substrate 1 after activation was measured, and the measurement results are shown in Table 1.
- the surface resistivity of the piezoelectric material substrate 1 on the silicon oxide layer 5 side is 1000 V applied voltage using a probe provided with a double ring electrode using HiLester UX MCP-HT 800 manufactured by Mitsubishi Chemical Analytech Co., Ltd. It measured as.
- the substrates 1 and 4 were aligned, and the activated bonding surface 1c of the piezoelectric material substrate 1 was brought into contact with the activated bonding surface 6 of the silicon oxide layer 5 at room temperature. The contact was made with the piezoelectric material substrate 1 side up. As a result, it was observed that the adhesion between the substrates 1 and 4 spreads (so-called bonding wave), and it was confirmed that the pre-joining was satisfactorily performed.
- the bonded body was placed in an oven under a nitrogen atmosphere and maintained at 120 ° C. for 10 hours.
- the substrate before being introduced into a high temperature oven, the substrate was divided into eight equal portions along the radiation from the center in order to prevent damage to the substrate due to thermal stress.
- the annealing temperature in the oven is 250.degree.
- the bonding strength was evaluated by a blade test (Semiconductor Wafer Bonding, Q.-Y. Tong & U. Gosele, p25) on eight bonded bodies removed from the heating oven.
- the surface 1b of the piezoelectric material substrate 1 of the bonded body 7 after heating was subjected to grinding, lapping and CMP to reduce the thickness of the piezoelectric material substrate 1A.
- An electrode 8 made of aluminum metal was provided on the surface 1 d of the polished piezoelectric material substrate 1 A by a photolithography process.
- the period ⁇ of the electrode is 5 ⁇ m so that the oscillation frequency is about 850 MHz.
- the thickness of the electrode 8 was 200 nm, and 80 pairs of reflectors were provided on both sides of 200 pairs of electrodes 8 to prepare a 1-port elastic wave device 10 (SAW resonator).
- the impedance characteristic of the produced elastic wave element 10 was measured by an Agilent network analyzer E5071C. As a result, a resonance peak was observed around 820 MHz (fs), and an anti-resonance peak was observed around 850 to 860 MHz (fr).
- the difference ⁇ f between the resonance frequency fs and the antiresonance frequency fr was measured. It is generally known that the difference ⁇ f is proportional to the electromechanical coupling coefficient k2 of the piezoelectric element. The results are shown in Table 1.
- the surface resistivity of the piezoelectric material substrate 1A on the silicon oxide layer 5 side is 1.73 ⁇ 10 15 ⁇ / ⁇ to 1.51 ⁇ It is about 10 16 ⁇ / ⁇ , and ⁇ f (MHz) is 38.8 to 39.6.
- ⁇ f (%) ⁇ f (MHz) / 850 (MHz) was about 4.6% to 4.7%.
- the bonding surface 1a of the piezoelectric material substrate 1 is surface activated with oxygen plasma, and the surface resistivity is 1.7 ⁇ 10 15 ⁇ / ⁇ or more and 1.6 ⁇ 10 16 ⁇ / ⁇ or less.
- the thickness of the piezoelectric material substrate 1 can be reduced, and the characteristic deterioration of the joined body (for example, the electromechanical coupling coefficient k2) can be suppressed. did it.
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Abstract
Description
支持基板、
前記支持基板上に設けられた酸化珪素層、および
前記酸化珪素層上に設けられた、ニオブ酸リチウム、タンタル酸リチウムおよびニオブ酸リチウム-タンタル酸リチウムからなる群より選ばれた材質からなる圧電性材料基板を備えた接合体であって、
前記酸化珪素層側の前記圧電性材料基板の表面抵抗率は、1.7×1015Ω/□以上であることを特徴とする。
前記圧電性材料基板の接合面に対して、150℃以下で酸素プラズマを照射して、前記接合面の表面抵抗率を1.7×1015Ω/□以上とした後に、前記圧電性材料基板の前記接合面を前記酸化珪素層の接合面に対して接合することを特徴とする。
まず、図1(a)に示すように、一対の主面1a、1bを有する圧電性材料基板1を準備する。本例では1aを接合面とする。次いで、図1(b)に示すように、圧電性材料基板1の接合面1aに対して矢印Aのようにプラズマを照射し、表面活性化された接合面1cを得る。
支持基板4の材質は特に限定されないが、好ましくは、シリコン、水晶、サイアロン、ムライト、サファイアおよび透光性アルミナからなる群より選ばれた材質からなる。これによって、弾性波素子10の周波数特性を一層改善することができる。
表面活性化時の圧力は、100Pa以下が好ましく、80Pa以下が更に好ましい。また、雰囲気は酸素のみであって良いが、酸素の他に、窒素ガスを含有していてもよい。
100℃以下とすることが更に好ましい。
弾性波素子10としては、弾性表面波デバイスやラム波素子、薄膜共振子(FBAR)などが知られている。例えば、弾性表面波デバイスは、圧電性材料基板の表面に、弾性表面波を励振する入力側のIDT(Interdigital Transducer)電極(櫛形電極、すだれ状電極ともいう)と弾性表面波を受信する出力側のIDT電極とを設けたものである。入力側のIDT電極に高周波信号を印加すると、電極間に電界が発生し、弾性表面波が励振されて圧電性材料基板上を伝搬していく。そして、伝搬方向に設けられた出力側のIDT電極から、伝搬された弾性表面波を電気信号として取り出すことができる。
図1~図3を参照しつつ説明した方法に従い、図3(b)に示す接合体7Aを作製した。
なお、酸化珪素層5側の圧電性材料基板1Aの表面抵抗率が2×1016Ω/□を越えると、接合強度が著しく低下した。そのため、圧電性材料基板1Aの厚さを薄くした際に、剥離が生じた。
実験Aにおいて、圧電性材料基板1の材質をニオブ酸リチウムに変更した。この結果、実験Aと同様の結果が得られた。
Claims (7)
- 支持基板、
前記支持基板上に設けられた酸化珪素層、および
前記酸化珪素層上に設けられた、ニオブ酸リチウム、タンタル酸リチウムおよびニオブ酸リチウム-タンタル酸リチウムからなる群より選ばれた材質からなる圧電性材料基板を備えた接合体であって、
前記酸化珪素層側の前記圧電性材料基板の表面抵抗率は、1.7×1015Ω/□以上であることを特徴とする、接合体。 - 前記支持基板が、シリコン、水晶、サイアロン、ムライト、サファイアおよび透光性アルミナからなる群より選ばれた材質からなることを特徴とする、請求項1に記載の接合体。
- ニオブ酸リチウム、タンタル酸リチウムおよびニオブ酸リチウム-タンタル酸リチウムからなる群より選ばれた材質からなる圧電性材料基板と、酸化珪素層が設けられた支持基板とを接合する方法であって、
前記圧電性材料基板の接合面に対して150℃以下で酸素プラズマを照射して、前記接合面の表面抵抗率を1.7×1015Ω/□以上とした後で、前記圧電性材料基板の前記接合面を前記酸化珪素層の前記接合面に対して接合することを特徴とする、圧電性材料基板と支持基板との接合体の製造方法。 - 前記酸化珪素層の前記接合面に対して150℃以下で酸素プラズマを照射して活性化した後で、前記圧電性材料基板の前記接合面を前記酸化珪素層の前記接合面に対して接合することを特徴とする、請求項3記載の方法。
- 前記圧電性材料基板の前記接合面を前記酸化珪素層の前記接合面に対して接合した後、前記圧電性材料基板の厚さを研磨によって小さくすることを特徴とする、請求項3または4記載の方法。
- 前記圧電性材料基板の厚さを研磨によって2μm以下まで小さくすることを特徴とする、請求項5記載の方法。
- 前記支持基板が、シリコン、水晶、サイアロン、ムライト、サファイアおよび透光性アルミナからなる群より選ばれた材質からなることを特徴とする、請求項3~6のいずれか一つの請求項に記載の方法。
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