WO2014034358A1 - 研磨剤、研磨剤セット及び基体の研磨方法 - Google Patents
研磨剤、研磨剤セット及び基体の研磨方法 Download PDFInfo
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- WO2014034358A1 WO2014034358A1 PCT/JP2013/070619 JP2013070619W WO2014034358A1 WO 2014034358 A1 WO2014034358 A1 WO 2014034358A1 JP 2013070619 W JP2013070619 W JP 2013070619W WO 2014034358 A1 WO2014034358 A1 WO 2014034358A1
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- Prior art keywords
- polishing
- abrasive
- mass
- abrasive grains
- insulating material
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
Definitions
- the present invention relates to an abrasive, an abrasive set, and a method for polishing a substrate.
- the present invention relates to a polishing agent, a polishing agent set, and a substrate polishing method used in a substrate surface flattening step, which is a semiconductor element manufacturing technique. More particularly, the present invention relates to a polishing agent, a polishing agent set, and a substrate polishing method used in a planarization process of a shallow trench isolation insulating material, a premetal insulating material, an interlayer insulating material, and the like.
- CMP Chemical Mechanical Polishing
- STI shallow trench isolation
- silica-based abrasive containing silica (silicon oxide) particles such as fumed silica and colloidal silica as abrasive grains.
- silica silica
- colloidal silica as abrasive grains.
- Silica-based abrasives are characterized by high versatility, and a wide variety of materials can be polished regardless of insulating materials and conductive materials by appropriately selecting the abrasive content, pH, additives, and the like.
- abrasives containing cerium compound particles as abrasive grains mainly for insulating materials such as silicon oxide there is an increasing demand for abrasives containing cerium compound particles as abrasive grains mainly for insulating materials such as silicon oxide.
- a cerium oxide-based abrasive containing cerium oxide (ceria) particles as abrasive grains can polish silicon oxide at high speed even with a lower abrasive grain content than a silica-based abrasive (see, for example, Patent Documents 1 and 2 below).
- a stopper (a polishing stop layer including a stopper material) disposed on the convex portion of the substrate having the concavo-convex pattern, and the substrate and the stopper so as to fill the concave portion of the concavo-convex pattern.
- a laminated body having an insulating material (e.g., silicon oxide) disposed on the substrate is polished. In such polishing, the polishing of the insulating material is stopped by a stopper. That is, the polishing of the insulating material is stopped when the stopper is exposed.
- the polishing agent contains particles of a hydroxide of a tetravalent metal element and at least one of a cationic polymer and a polysaccharide, so that silicon oxide can be accelerated.
- Patent Document 9 uses a polishing agent containing hydroxide particles of a tetravalent metal element and polyvinyl alcohol having a saponification degree of 95 mol% or less, so that a high polishing rate of an insulating material with respect to polysilicon is obtained. It is disclosed that a ratio is obtained.
- JP-A-10-106994 Japanese Patent Application Laid-Open No. 08-022970 International Publication No. 2002/067309 International Publication No. 2012/070541 International Publication No. 2012/070542 JP 2006-249129 A International Publication No. 2012/070544 International Publication No. 2009/131133 International Publication No. 2010/143579
- Patent Documents 8 and 9 have a portion having a high convex pattern density (a convex portion) in a blanket wafer in which no pattern is formed and a patterned wafer in which a simulated pattern is formed.
- the polishing selectivity of the insulating material with respect to the stopper material can be improved, but the portion where the convex pattern density in the pattern wafer is small (the convex pattern In a rough portion (for example, a portion where the convex pattern density is less than 50%), the stopper material may be excessively polished, and there is room for improvement in the polishing selectivity of the insulating material with respect to the stopper material. I found.
- the stopper material portion exposed relatively early is polished for a longer time than the stopper material portion exposed relatively late, and thus may be excessively polished.
- the thickness of the stopper is locally different within the same pattern wafer, which adversely affects the finally obtained device (semiconductor device or the like).
- Such a phenomenon is remarkably confirmed in the portion of the pattern wafer where the convex pattern density is small, so even if overpolishing is performed, the polishing rate of the stopper material is suppressed without depending on the convex pattern density. It is requested to do.
- the present invention is intended to solve these problems, and can improve the polishing selectivity of the insulating material with respect to the stopper material, and is a case where overpolishing is performed in the polishing of the insulating material using the stopper.
- the present inventors use a polymer compound having an aromatic ring and a polyoxyalkylene chain in combination with a cationic polymer, the effect of further increasing the polishing selectivity of the insulating material with respect to the stopper material as compared with the prior art.
- the polishing rate of the stopper material can be suppressed without depending on the convex pattern density even when overpolishing is performed.
- the abrasive according to the present invention contains a liquid medium, abrasive grains containing a hydroxide of a tetravalent metal element, a polymer compound having an aromatic ring and a polyoxyalkylene chain, and a cationic polymer.
- the weight average molecular weight of the polymer compound is 1000 or more.
- the polishing agent according to the present invention can improve the polishing selectivity of the insulating material with respect to the stopper material. Moreover, according to the abrasive
- the polishing selectivity of the insulating material to the stopper material can be achieved without depending on the convex pattern density even in the case of overpolishing in the polishing of the insulating material using the stopper. Can be improved.
- silicon nitride has been used for many years as the stopper material.
- polysilicon is used as the stopper material in order to further improve the flatness. It is increasing. In this case, it is necessary to suppress the polishing rate of polysilicon from the viewpoint of increasing the polishing selectivity of the insulating material with respect to polysilicon.
- conventional abrasives have room for improvement in the polishing selectivity of insulating materials relative to polysilicon.
- the polishing selectivity of the insulating material with respect to polysilicon can be improved.
- the polishing agent of the present invention even when over-polishing is performed when the insulating material of the portion having a small convex pattern density is polished using polysilicon as a stopper material, the polishing rate of the polysilicon Can be suppressed. For this reason, in the polishing of the insulating material using polysilicon as a stopper material, the polishing rate of polysilicon can be suppressed without depending on the convex pattern density even when overpolishing is performed.
- the polishing agent of the present invention in the polishing of the insulating material using polysilicon as a stopper material, the insulating material against the polysilicon is not dependent on the convex pattern density even when overpolishing is performed. Polishing selectivity can be improved.
- these insulating materials can be highly planarized in the CMP technique for planarizing the shallow trench isolation insulating material, the premetal insulating material, the interlayer insulating material, and the like.
- an insulating material can also be grind
- the tetravalent metal element preferably contains at least one selected from the group consisting of rare earth elements and zirconium. Accordingly, it is possible to suppress the occurrence of polishing flaws on the surface to be polished while further improving the polishing selectivity of the insulating material with respect to the stopper material without depending on the convex pattern density.
- the content of the polymer compound is preferably 0.01% by mass or more based on the total mass of the abrasive. Accordingly, it is possible to suppress the occurrence of polishing flaws on the surface to be polished while further improving the polishing selectivity of the insulating material with respect to the stopper material without depending on the convex pattern density.
- the polymer compound preferably contains a compound represented by the following general formula (I).
- R 11 represents an aryl group which may have a substituent
- R 12 represents an alkylene group having 1 to 5 carbon atoms which may have a substituent
- m1 Represents an integer of 15 or more.
- One embodiment of the present invention relates to the use of the abrasive for polishing a surface to be polished containing silicon oxide. That is, one embodiment of the abrasive according to the present invention is preferably used for polishing a surface to be polished containing silicon oxide.
- the constituents of the abrasive are stored separately in a first liquid and a second liquid, and the first liquid contains the abrasive grains and a liquid medium, and the second liquid Includes the polymer compound, the cationic polymer, and a liquid medium.
- polishing agent which concerns on this invention can be acquired.
- the method for polishing a substrate according to the present invention may comprise a step of polishing the surface to be polished of the substrate using the abrasive. According to such a method for polishing a substrate, the same effect as the abrasive according to the present invention can be obtained by using the abrasive.
- the substrate polishing method according to the present invention includes a step of polishing a surface to be polished of a substrate using an abrasive obtained by mixing the first liquid and the second liquid in the abrasive set. May be. According to such a method for polishing a substrate, the same effect as the abrasive according to the present invention can be obtained by using the abrasive set.
- the polishing selectivity of the insulating material with respect to the stopper material can be improved, and the polishing of the insulating material using the stopper depends on the convex pattern density even when over-polishing is performed.
- the present invention it is possible to improve the polishing selectivity of the insulating material with respect to the polysilicon, and the convex portion even when overpolishing is performed in the polishing of the insulating material using polysilicon as the stopper material. It is possible to provide a polishing agent, a polishing agent set, and a substrate polishing method capable of suppressing the polishing rate of polysilicon without depending on the pattern density.
- the present invention in CMP technology for flattening a shallow trench isolation insulating material, a premetal insulating material, an interlayer insulating material, etc., when polishing the insulating material using a stopper, it does not depend on the convex pattern density. Further, it is possible to polish the insulating material with low polishing scratches while improving the polishing selectivity of the insulating material with respect to the stopper material.
- polishing agent the polishing agent set, and the substrate polishing method using these according to the embodiment of the present invention will be described in detail.
- abrasive is defined as a composition that touches the surface to be polished during polishing.
- the phrase “abrasive” itself does not limit the components contained in the abrasive.
- the abrasive according to the present embodiment contains abrasive grains.
- Abrasive grains are "abrasive particles" In this specification, it is called “abrasive grain”.
- Abrasive grains are generally solid particles. In this case, at the time of polishing, it is considered that the removal target is removed by the mechanical action of the abrasive grains and the chemical action of the abrasive grains (mainly the surface of the abrasive grains). It is not limited to this.
- the abrasive according to this embodiment is, for example, an abrasive for CMP.
- the abrasive according to this embodiment contains at least a liquid medium, abrasive grains containing a hydroxide of a tetravalent metal element, and an additive, and the additive includes an aromatic ring and a polyoxy It contains at least a polymer compound having an alkylene chain (hereinafter referred to as “aromatic polyoxyalkylene compound”) and a cationic polymer.
- aromatic polyoxyalkylene compound polymer compound having an alkylene chain
- the abrasive grains of the abrasive according to this embodiment contain a hydroxide of a tetravalent metal element.
- the “tetravalent metal element hydroxide” is a compound containing a tetravalent metal (M 4+ ) and at least one hydroxide ion (OH ⁇ ).
- the hydroxide of the tetravalent metal element may contain an anion (for example, nitrate ion NO 3 ⁇ , sulfate ion SO 4 2 ⁇ ) other than hydroxide ions.
- a hydroxide of a tetravalent metal element may contain an anion (for example, nitrate ion or sulfate ion) bonded to the tetravalent metal element.
- the abrasive grains containing a hydroxide of the tetravalent metal element have a higher reactivity with an insulating material (for example, silicon oxide) than conventional abrasive grains made of silica, alumina, ceria, etc. Can be polished at a polishing rate.
- the tetravalent metal element preferably contains at least one selected from the group consisting of rare earth elements and zirconium.
- the tetravalent metal element is preferably a rare earth element from the viewpoint of further improving the polishing rate of the insulating material.
- the rare earth element capable of taking tetravalence include lanthanoids such as cerium, praseodymium, and terbium, and among them, cerium is preferable in that the polishing rate of the insulating material is further improved.
- a rare earth element hydroxide and a zirconium hydroxide may be used in combination, or two or more rare earth element hydroxides may be selected and used.
- a hydroxide of a tetravalent metal element can be prepared by reacting a salt of a tetravalent metal element with a basic compound (alkali source).
- a basic compound alkali source
- a technique of mixing a salt of a tetravalent metal element and an alkali solution can be used as a method for producing a hydroxide of a tetravalent metal element. This method is described in, for example, “Science of rare earths” (edited by Adiya Ginya, Kagaku Dojin, 1999), pages 304-305.
- M is preferably chemically active cerium (Ce).
- Basic compounds in the alkaline solution include organic bases such as imidazole, tetramethylammonium hydroxide (TMAH), guanidine, triethylamine, pyridine, piperidine, pyrrolidine, chitosan; ammonia, potassium hydroxide, sodium hydroxide, calcium hydroxide.
- organic bases such as imidazole, tetramethylammonium hydroxide (TMAH), guanidine, triethylamine, pyridine, piperidine, pyrrolidine, chitosan
- ammonia potassium hydroxide
- sodium hydroxide sodium hydroxide
- calcium hydroxide calcium hydroxide.
- Inorganic bases such as Among these, ammonia and imidazole are preferable, and imidazole is more preferable from the viewpoint of further improving the polishing rate of the insulating material.
- Abrasive grains containing a hydroxide of a tetravalent metal element synthesized by the above method can be washed
- a method of repeating solid-liquid separation several times by centrifugation or the like can be used. It can also be washed by a process such as centrifugation, dialysis, ultrafiltration, ion removal with an ion exchange resin or the like.
- the abrasive grains containing the tetravalent metal element hydroxide obtained above are agglomerated, it is preferably dispersed in a liquid medium (for example, water) by an appropriate method.
- a liquid medium for example, water
- dispersion treatment with a normal stirrer; mechanical dispersion with a homogenizer, ultrasonic disperser, wet ball mill, etc .; centrifugation, dialysis , Ultrafiltration, removal of contaminating ions with an ion exchange resin, and the like.
- the dispersion method and the particle size control method for example, the method described in “Dispersion Technology Complete Collection” [Information Organization Co., Ltd., July 2005] Chapter 3, “Latest Development Trends and Selection Criteria of Various Dispersers” Can be used.
- the hydroxide of the tetravalent metal element is also reduced by lowering the electrical conductivity (for example, 500 mS / m or less) of the dispersion containing abrasive grains containing the hydroxide of the tetravalent metal element by performing the above-described cleaning treatment. Therefore, the cleaning process may be applied as a dispersion process, or the cleaning process and the dispersion process may be used in combination.
- abrasive grains containing a hydroxide of a tetravalent metal element may be used in combination with other abrasive grains.
- examples of such other abrasive grains include particles of silica, alumina, ceria and the like.
- abrasive grains containing a hydroxide of a tetravalent metal element composite particles containing a hydroxide of a tetravalent metal element and silica can also be used.
- the content of the tetravalent metal element hydroxide is preferably 80% by mass or more, more preferably 90% by mass or more, still more preferably 95% by mass or more, particularly preferably 98% by mass or more, based on the whole abrasive grain. 99 mass% or more is very preferable.
- the abrasive grains are composed of a hydroxide of the tetravalent metal element (substantially 100% by mass of the abrasive grains is water of the tetravalent metal element. Most preferred are oxide particles).
- the abrasive grains containing a tetravalent metal element hydroxide are light having a wavelength of 400 nm in an aqueous dispersion in which the content of the abrasive grains is adjusted to 1.0 mass%. It is preferable to give an absorbance of 1.00 or more.
- the “aqueous dispersion” in which the content of abrasive grains is adjusted to a predetermined amount means a liquid containing a predetermined amount of abrasive grains and water.
- the tetravalent metal (M 4+ ), 1 to 3 hydroxide ions (OH ⁇ ), and 1 to 3 anions (X c ⁇ ) are formed as part of the abrasive grains. Abrasive grains containing elemental hydroxides).
- the electron-withdrawing anion (X c ⁇ ) acts to improve the reactivity of hydroxide ions, and the amount of M (OH) a X b increases. It is considered that the polishing rate is improved along with this.
- the abrasive grains containing a tetravalent metal element hydroxide may contain not only M (OH) a X b but also M (OH) 4 , MO 2, and the like.
- M (OH) a X b examples include NO 3 ⁇ , SO 4 2 ⁇ and the like.
- the abrasive grains contain M (OH) a Xb after the abrasive grains are thoroughly washed with pure water and then the FT-IR ATR method (Fourier transform Infrared Spectrometer Attenuated Total Reflection method, Fourier transform infrared spectrophotometer This can be confirmed by a method of detecting a peak corresponding to an anion (X c ⁇ ) by a total reflection measurement method. The presence of anions (X c ⁇ ) can also be confirmed by XPS (X-ray Photoelectron Spectroscopy, X-ray photoelectron spectroscopy).
- the abrasive has an absorbance of 1.000 or more with respect to light having a wavelength of 290 nm in an aqueous dispersion in which the content of the abrasive is adjusted to 0.0065% by mass. It is preferable to give. The reason why such an effect of improving the polishing rate is not necessarily clear, but the present inventor considers as follows.
- particles containing M (OH) a X b produced according to the production conditions of a hydroxide of a tetravalent metal element have an absorption peak around a wavelength of 290 nm in calculation, for example, Ce 4+ (OH).
- the particles made of ⁇ ) 3 NO 3 — have an absorption peak at a wavelength of 290 nm. Therefore, it is considered that the polishing rate is improved as the abundance of M (OH) a Xb increases and the absorbance to light having a wavelength of 290 nm increases.
- the hydroxide of the tetravalent metal element (for example, M (OH) a X b ) tends not to absorb light having a wavelength of 450 nm or more, particularly 450 to 600 nm. Therefore, from the viewpoint of suppressing an adverse effect on polishing due to inclusion of impurities and polishing the insulating material at a further excellent polishing rate, the abrasive grains have a content of the abrasive grains of 0.0065 mass. In an aqueous dispersion adjusted to%, it is preferable to give an absorbance of 0.010 or less to light having a wavelength of 450 to 600 nm.
- the abrasive grains have a light transmittance of 50% / light with respect to light having a wavelength of 500 nm in an aqueous dispersion in which the content of the abrasive grains is adjusted to 1.0 mass%. It is preferable that it gives cm or more.
- the present inventor considers as follows. That is, it is considered that the chemical action is more dominant than the mechanical action of the action of the abrasive grains containing the hydroxide of the tetravalent metal element. Therefore, it is considered that the number of abrasive grains contributes more to the polishing rate than the size of the abrasive grains.
- the abrasive grains present in the aqueous dispersion are particles having a large particle diameter (hereinafter referred to as “coarse particles”). It is thought that there are relatively many.
- coarse particles As a result, the number of abrasive grains acting on the surface to be polished per unit area (the number of effective abrasive grains) decreases, and the specific surface area of the abrasive grains in contact with the surface to be polished decreases, so the polishing rate may decrease. Conceivable.
- the abrasive grains present in the aqueous dispersion are considered to be in a state where there are few “coarse particles”. It is done. In this way, when the amount of coarse particles is small, even if an additive is added to the abrasive, there are few coarse particles that become the core of agglomeration. Particle size is reduced.
- the polishing rate of the insulating material is easily improved.
- the absorbance and light transmittance that the abrasive grains contained in the abrasive give in the aqueous dispersion of the abrasive grains can be measured using, for example, a spectrophotometer (device name: U3310) manufactured by Hitachi, Ltd. Specifically, for example, an aqueous dispersion in which the content of abrasive grains is adjusted to 1.0 mass% or 0.0065 mass% is prepared as a measurement sample. About 4 mL of this measurement sample is put into a 1 cm square cell, and the cell is set in the apparatus. Next, the absorbance is measured in the wavelength range of 200 to 600 nm, and the absorbance and light transmittance are determined from the obtained chart.
- the absorbance and light transmittance that the abrasive grains contained in the abrasive give in the aqueous dispersion of the abrasive grains are determined by removing the solid components other than abrasive grains and the liquid components other than water, and then the predetermined abrasive grain content.
- An aqueous dispersion is prepared and can be measured using the aqueous dispersion.
- the solid component or liquid component can be removed by centrifugation using a centrifugal machine that can apply gravitational acceleration of several thousand G or less, Centrifugal methods such as ultracentrifugation using a centrifuge; chromatography methods such as distribution chromatography, adsorption chromatography, gel permeation chromatography, ion exchange chromatography; natural filtration, vacuum filtration, pressure filtration, ultrafiltration Filtration methods such as distillation; distillation methods such as vacuum distillation and atmospheric distillation can be used, and these may be combined as appropriate.
- Centrifugal methods such as ultracentrifugation using a centrifuge
- chromatography methods such as distribution chromatography, adsorption chromatography, gel permeation chromatography, ion exchange chromatography
- natural filtration, vacuum filtration, pressure filtration, ultrafiltration Filtration methods such as distillation
- distillation methods such as vacuum distillation and atmospheric distillation can be used, and these may be combined as appropriate.
- a compound having a weight average molecular weight of tens of thousands or more for example, 50,000 or more
- a chromatography method, a filtration method and the like can be mentioned, and gel permeation chromatography and ultrafiltration are preferable.
- the abrasive grains contained in the abrasive can be passed through the filter by setting appropriate conditions.
- examples thereof include a chromatography method, a filtration method, and a distillation method, and gel permeation chromatography, ultrafiltration, and vacuum distillation are preferable.
- abrasive grains When multiple types of abrasive grains are included, examples thereof include filtration methods and centrifugal separation methods. In the case of filtration methods, abrasives containing a tetravalent metal element hydroxide in the filtrate and in the case of centrifugal methods in the liquid phase. Contains more grains.
- the abrasive grains and / or other components can be fractionated under the following conditions.
- Sample solution 100 ⁇ L of abrasive Detector: manufactured by Hitachi, Ltd., UV-VIS detector, trade name “L-4200”, wavelength: 400 nm Integrator: Hitachi, Ltd., GPC integrator, product name “D-2500” Pump: Hitachi, Ltd., trade name “L-7100” Column: Hitachi Chemical Co., Ltd., packed column for aqueous HPLC, trade name “GL-W550S” Eluent: Deionized water Measurement temperature: 23 ° C Flow rate: 1 mL / min (pressure: about 40-50 kg / cm 2 ) Measurement time: 60 minutes
- a deaeration device it is preferable to deaerate the eluent using a deaeration device before performing chromatography.
- the deaerator cannot be used, it is preferable to deaerate the eluent in advance with ultrasonic waves or the like.
- the abrasive grains may not be collected under the above conditions. In this case, separation can be achieved by optimizing the amount of sample solution, column type, eluent type, measurement temperature, flow rate, and the like. In addition, by adjusting the pH of the abrasive, the distillation time of components contained in the abrasive may be adjusted and separated from the abrasive grains. When there are insoluble components in the abrasive, it is preferable to remove the insoluble components by filtration, centrifugation or the like, if necessary.
- the lower limit of the average particle size of the abrasive grains in the abrasive is preferably 1 nm or more, more preferably 2 nm or more, and further preferably 5 nm or more from the viewpoint of obtaining a more suitable polishing rate for the insulating material.
- the upper limit of the average grain size of the abrasive grains is preferably 300 nm or less, more preferably 250 nm or less, and still more preferably 200 nm or less, from the viewpoint of further suppressing the surface to be polished from being scratched. From the above viewpoint, the average grain size of the abrasive grains is more preferably 1 nm or more and 300 nm or less.
- the “average particle diameter” of the abrasive grains means the average secondary particle diameter of the abrasive grains in the abrasive.
- a light diffraction scattering type particle size distribution meter for example, Beckman Coulter, trade name: N5, or Malvern Instruments, trade name: Zetasizer 3000HSA
- a light diffraction scattering type particle size distribution meter for example, Beckman Coulter, trade name: N5, or Malvern Instruments, trade name: Zetasizer 3000HSA
- the lower limit of the abrasive content is preferably 0.005% by mass or more, more preferably 0.01% by mass or more, based on the total mass of the abrasive, from the viewpoint of further improving the polishing rate of the insulating material. 02 mass% or more is still more preferable, and 0.04 mass% or more is especially preferable.
- the upper limit of the abrasive content is preferably 20% by mass or less, more preferably 15% by mass or less, and even more preferably 10% by mass or less, based on the total mass of the abrasive, from the viewpoint of increasing the storage stability of the abrasive. preferable. From the above viewpoint, the content of the abrasive grains is more preferably 0.005% by mass or more and 20% by mass or less based on the total mass of the abrasive.
- the cost and polishing scratches can be further reduced by further reducing the content of abrasive grains.
- the content of abrasive grains decreases, the polishing rate of an insulating material or the like tends to decrease.
- abrasive grains containing a hydroxide of a tetravalent metal element can obtain a predetermined polishing rate even with a small amount, so that the balance between the polishing rate and the advantage of reducing the content of abrasive grains is balanced.
- the content of abrasive grains can be further reduced.
- the content of the abrasive grains is preferably 5% by mass or less, more preferably 3% by mass or less, still more preferably 1% by mass or less, particularly preferably 0.5% by mass or less, and 0.3% by mass. % Or less is very preferable.
- polishing agent which concerns on this embodiment contains an additive.
- the “additive” means a polishing agent other than the liquid medium and the abrasive grains in order to adjust polishing characteristics such as polishing rate and polishing selectivity; and abrasive characteristics such as abrasive dispersibility and storage stability. Refers to the substance contained.
- the abrasive according to this embodiment contains an aromatic polyoxyalkylene compound (a polymer compound having an aromatic ring and a polyoxyalkylene chain) as a first additive.
- An aromatic polyoxyalkylene compound is a compound in which a substituent having an aromatic ring is introduced at the end of a polyoxyalkylene chain.
- the aromatic ring may or may not be directly bonded to the polyoxyalkylene chain.
- the aromatic ring may be monocyclic or polycyclic.
- the aromatic polyoxyalkylene compound may have a structure in which a plurality of polyoxyalkylene chains are bonded via a substituent having an aromatic ring.
- the polyoxyalkylene chain is preferably a polyoxyethylene chain or a polyoxypropylene chain.
- the number of structural units of the polyoxyalkylene chain is preferably 15 or more.
- the aromatic polyoxyalkylene compound has an effect of suppressing an excessive increase in the polishing rate of the stopper material. Further, by using an aromatic polyoxyalkylene compound, the polishing selectivity of the insulating material with respect to the stopper material can be improved without depending on the convex pattern density. The reason why these effects occur is presumed that the polishing of the stopper material is suppressed when the aromatic polyoxyalkylene compound covers the stopper material. As a result, even when a portion having a small convex pattern density is polished, it is presumed that the progress of polishing of the stopper material by the abrasive grains is alleviated and the density dependency of the convex pattern density is suppressed. . Each of the above effects can be obtained more prominently when the stopper material is polysilicon.
- Examples of the substituent having an aromatic ring include an aryl group when the aromatic ring is located at the end of the aromatic polyoxyalkylene compound.
- Examples of the aryl group include monocyclic aromatic groups such as a phenyl group, benzyl group, tolyl group, and xylyl group; polycyclic aromatic groups such as a naphthyl group, and these aromatic groups further have a substituent. May be.
- Examples of substituents introduced into aromatic groups include alkyl groups, vinyl groups, allyl groups, alkenyl groups, alkynyl groups, alkoxy groups, halogeno groups, hydroxy groups, carbonyl groups, nitro groups, amino groups, styrene groups, and aromatic groups. Group, etc., and an alkyl group and a styrene group are preferable.
- Examples of the substituent having an aromatic ring include an arylene group when the aromatic ring is located in the main chain of the aromatic polyoxyalkylene compound.
- Examples of the arylene group include monocyclic aromatic groups such as a phenylene group, a tolylene group, and a xylylene group; polycyclic aromatic groups such as a naphthylene group, and these aromatic groups may further have a substituent.
- Examples of substituents introduced into aromatic groups include alkyl groups, vinyl groups, allyl groups, alkenyl groups, alkynyl groups, alkoxy groups, halogeno groups, hydroxy groups, carbonyl groups, nitro groups, amino groups, styrene groups, and aromatic groups. Groups and the like.
- aromatic polyoxyalkylene compound examples include compounds represented by the following general formula (I) and compounds represented by the following general formula (II).
- R 11 represents an aryl group which may have a substituent
- R 12 represents an alkylene group having 1 to 5 carbon atoms which may have a substituent
- m1 Represents an integer of 15 or more.
- R 21 and R 22 each independently represent an arylene group which may have a substituent
- R 23 , R 24 and R 25 each independently have a substituent.
- n1 and n2 each independently represents an integer of 15 or more.
- the formula (I) or the formula (II) preferably satisfies at least one of the following conditions.
- -As R ⁇ 11 > said aryl group illustrated as a substituent which has an aromatic ring is preferable, and the phenyl group into which the alkyl group or the styrene group was introduce
- R 12 , R 23 , R 24 and R 25 are preferably an ethylene group or an n-propylene group.
- -M1 is preferably 15 or more, more preferably 30 or more, still more preferably 45 or more, and particularly preferably 60 or more.
- -M1 is preferably 2000 or less, more preferably 900 or less, still more preferably 600 or less, and particularly preferably 300 or less.
- -As for n1 and n2, 15 or more are preferable and 30 or more are more preferable.
- N1 and n2 are preferably 2000 or less, more preferably 900 or less, still more preferably 600 or less, and particularly preferably 300 or less.
- the compound represented by the formula (I) is preferable from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material.
- a compound represented by the following general formula (III) and a compound represented by the following general formula (IV) are more preferable.
- the compound represented by (III) is more preferable.
- R 31 represents an optionally substituted alkylene group having 1 to 5 carbon atoms
- m2 represents an integer of 1 to 3
- m3 represents an integer of 15 or more.
- R 41 represents an alkyl group which may have a substituent
- R 42 represents an alkylene group having 1 to 5 carbon atoms which may have a substituent
- m4 represents an integer of 15 or more.
- the aromatic ring in Formula (IV) may further have a substituent.
- R 31 is preferably an ethylene group or an n-propylene group, and more preferably an ethylene group.
- R 41 is preferably an alkyl group having 1 to 40 carbon atoms, and more preferably an alkyl group having 6 to 20 carbon atoms.
- R 42 is preferably an ethylene group or an n-propylene group, and more preferably an ethylene group.
- -M2 is preferably 1 or more.
- -M3 is preferably 15 or more, more preferably 30 or more, still more preferably 45 or more, and particularly preferably 60 or more.
- -M3 is preferably 2000 or less, more preferably 900 or less, still more preferably 600 or less, and particularly preferably 300 or less.
- -M4 is preferably 15 or more, more preferably 30 or more, still more preferably 45 or more, and particularly preferably 60 or more.
- -M4 is preferably 2000 or less, more preferably 900 or less, still more preferably 600 or less, and particularly preferably 300 or less. Examples of the substituent which the aromatic ring further has in addition to R 41 in-formula (IV), a propenyl group is preferred.
- Aromatic polyoxyalkylene represented by the above formula (III) such as polyoxyethylene styrenated phenyl ether (for example, Emulgen A-500 manufactured by Kao Corporation; Neugen EA-7 series manufactured by Daiichi Kogyo Seiyaku Co., Ltd.) Compound; Formulas (IV) such as polyoxyethylene alkylphenyl ether (for example, Daimaru Kogyo Seiyaku Co., Ltd., Emulgit series), polyoxyethylene nonyl propenyl phenyl ether (for example, Daiichi Kogyo Seiyaku Co., Ltd., Aqualon RN series) The aromatic polyoxyalkylene compound represented by these; etc. are mentioned.
- aromatic polyoxyalkylene compound represented by the formula (II) examples include 2,2-bis (4-polyoxyethyleneoxyphenyl) propane.
- the aromatic polyoxyalkylene compound can be used alone or in combination of two or more for the purpose of adjusting polishing characteristics such as polishing selectivity and flatness.
- the lower limit of the weight average molecular weight of the aromatic polyoxyalkylene compound is 1000 or more, preferably 1500 or more, more preferably 2000 or more, and still more preferably 3000 or more, from the viewpoint of excellent polishing selectivity of the insulating material with respect to the stopper material.
- the upper limit of the weight average molecular weight of the aromatic polyoxyalkylene compound is preferably 100,000 or less, more preferably 50000 or less, still more preferably 30000 or less, and particularly preferably 20000 or less, from the viewpoint of further excellent polishing selectivity of the insulating material with respect to the stopper material. Preferably, 15000 or less is very preferable, and 10,000 or less is very preferable.
- the weight average molecular weight of an aromatic polyoxyalkylene compound can be measured on condition of the following by the gel permeation chromatography method (GPC) using the calibration curve of a standard polystyrene, for example.
- GPC gel permeation chromatography method
- Equipment used Hitachi L-6000 (made by Hitachi, Ltd.) Column: Gel pack GL-R420 + Gel pack GL-R430 + Gel pack GL-R440 [trade name, total 3 manufactured by Hitachi Chemical Co., Ltd.]
- the lower limit of the content of the aromatic polyoxyalkylene compound is preferably 0.01% by mass or more based on the total mass of the abrasive. Thereby, the generation
- the lower limit of the content of the aromatic polyoxyalkylene compound is preferably 0.05% by mass or more, more preferably 0.1% by mass or more, more preferably 0.2% by mass based on the total mass of the abrasive. % Or more is particularly preferable.
- the upper limit of the content of the aromatic polyoxyalkylene compound is not particularly limited, but is preferably 10.0% by mass or less based on the total mass of the abrasive, and 5.0% by mass from the viewpoint of excellent stability and productivity. % Or less is more preferable, 3.0% by mass or less is further preferable, 2.0% by mass or less is particularly preferable, and 1.0% by mass or less is extremely preferable.
- % Or less is more preferable, 3.0% by mass or less is further preferable, 2.0% by mass or less is particularly preferable, and 1.0% by mass or less is extremely preferable.
- the abrasive according to the present embodiment contains a cationic polymer as a second additive in addition to the first additive (aromatic polyoxyalkylene compound).
- a “cationic polymer” is defined as a polymer having a cationic group or a group that can be ionized into a cationic group in the main chain or side chain. Examples of the cationic group include an amino group, an imino group, and a cyano group.
- the cationic polymer has an effect of further suppressing an excessive increase in the polishing rate of the stopper material (for example, polysilicon) when used in combination with an aromatic polyoxyalkylene compound.
- the cationic polymer can suppress a decrease in the polishing rate of the insulating material due to the aromatic polyoxyalkylene compound covering the insulating material (for example, silicon oxide) excessively in addition to the stopper material.
- the cationic polymer interacts with the aromatic polyoxyalkylene compound, so that the polishing rate of the stopper material can be suppressed and the insulating material It is considered that the polishing rate can be improved.
- Examples of the cationic polymer include polymers obtained by polymerizing at least one monomer component selected from the group consisting of allylamine, diallylamine, vinylamine, ethyleneimine, and derivatives thereof (allylamine polymer, diallylamine polymer). , Vinylamine polymers, ethyleneimine polymers), and polysaccharides such as chitosan and chitosan derivatives.
- the allylamine polymer is a polymer obtained by polymerizing allylamine or a derivative thereof.
- the allylamine derivative include alkoxycarbonylated allylamine, methylcarbonylated allylamine, aminocarbonylated allylamine, ureated allylamine and the like.
- the diallylamine polymer is a polymer obtained by polymerizing diallylamine or a derivative thereof.
- diallylamine derivatives include methyl diallylamine, diallyldimethylammonium salt, diallylmethylethylammonium salt, acylated diallylamine, aminocarbonylated diallylamine, alkoxycarbonylated diallylamine, aminothiocarbonylated diallylamine, hydroxyalkylated diallylamine, and the like.
- the ammonium salt include ammonium chloride and ammonium alkyl sulfate (for example, ammonium ethyl sulfate).
- the diallylamine polymer is preferably a diallyldimethylammonium chloride polymer from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material.
- the vinylamine polymer is a polymer obtained by polymerizing vinylamine or a derivative thereof.
- the vinylamine derivative include alkylated vinylamine, amidated vinylamine, ethylene oxideated vinylamine, propylene oxided vinylamine, alkoxylated vinylamine, carboxymethylated vinylamine, acylated vinylamine, and ureaated vinylamine.
- the ethyleneimine polymer is a polymer obtained by polymerizing ethyleneimine or a derivative thereof.
- the ethyleneimine derivative include aminoethylated acrylic polymer, alkylated ethyleneimine, ureaated ethyleneimine, propylene oxideated ethyleneimine and the like.
- the cationic polymer may have structural units derived from monomer components other than allylamine, diallylamine, vinylamine, ethyleneimine and derivatives thereof, such as acrylamide, dimethylacrylamide, diethylacrylamide, hydroxyethylacrylamide, It may have a structural unit derived from acrylic acid, methyl acrylate, methacrylic acid, maleic acid or sulfur dioxide.
- the cationic polymer may be a homopolymer of allylamine, diallylamine, vinylamine, ethyleneimine (polyallylamine, polydiallylamine, polyvinylamine, polyethyleneimine), which further improves the polishing selectivity of the insulating material with respect to the stopper material. From the viewpoint, an allylamine homopolymer (polyallylamine) is preferred.
- the cationic polymer may be a copolymer having a structural unit derived from allylamine, diallylamine, vinylamine, ethyleneimine or a derivative thereof.
- the arrangement of structural units is arbitrary. For example, (a) a form of block copolymer in which the same type of structural units are continuous, (b) a form of random copolymerization in which the structural units A and B are particularly ordered, (c) structural units A and structural units Any form such as an alternating copolymerization form in which B is alternately arranged may be employed.
- the copolymer is preferably a copolymer obtained by polymerizing a composition containing acrylamide as a monomer component from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material, and diallyldimethylammonium salt.
- a copolymer obtained by polymerizing a composition containing acrylamide as a monomer component is more preferable, and a diallyldimethylammonium chloride / acrylamide copolymer is more preferable.
- chitosan derivatives include chitosan pyrrolidone carboxylate, cationized chitosan, hydroxypropyl chitosan, chitosan lactate, glycerylated chitosan, glycol chitosan, carboxymethyl chitosan (CM-chitosan), carboxymethyl chitosan succinamide and the like.
- cationic polymers heavy weight obtained by polymerizing allylamine, diallylamine or vinylamine from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material and further improving the polishing speed of the insulating material.
- Amine amine polymers are preferred.
- the cationic polymer can be used alone or in combination of two or more for the purpose of adjusting polishing properties such as polishing selectivity and flatness.
- the lower limit of the weight average molecular weight of the cationic polymer is preferably 100 or more, more preferably 300 or more, and even more preferably 500 or more from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material.
- the upper limit of the weight average molecular weight of the cationic polymer is preferably 1000000 or less, more preferably 600000 or less, and even more preferably 300000 or less, from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material.
- the weight average molecular weight of the cationic polymer can be measured by the same method as the weight average molecular weight of the first additive.
- the lower limit of the content of the cationic polymer is preferably 0.0001% by mass or more based on the total mass of the abrasive from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material and the flatness. It is more preferably 0.0002% by mass or more, still more preferably 0.0005% by mass or more, and particularly preferably 0.0008% by mass or more.
- the upper limit of the content of the cationic polymer is preferably 5% by mass or less, more preferably 3% by mass or less, based on the total mass of the abrasive, from the viewpoint of further excellent polishing selectivity of the insulating material with respect to the stopper material.
- % By mass or less is more preferable, 0.5% by mass or less is particularly preferable, 0.1% by mass or less is extremely preferable, 0.05% by mass or less is very preferable, 0.01% by mass or less is particularly preferable, and 005 mass% or less is still more preferable.
- the content of the cationic polymer depends on the insulating material production method (type and filming conditions) from the viewpoint of further improving the polishing speed of the insulating material, the polishing selectivity of the insulating material with respect to the stopper material, and the flatness. It is preferable to adjust appropriately.
- the abrasive according to this embodiment may further contain other additives in addition to the first additive and the second additive for the purpose of adjusting the polishing characteristics.
- other additives include carboxylic acids, amino acids, water-soluble polymers, oxidizing agents (for example, hydrogen peroxide), pH adjusting agents and buffers described later. These can be used alone or in combination of two or more.
- the content is 0.0001% by mass or more and 10% by mass based on the total mass of the abrasive from the viewpoint of obtaining the additive effect while suppressing sedimentation of the abrasive grains.
- the following is preferred.
- Carboxylic acid has the effect of stabilizing the pH and further improving the polishing rate of the insulating material.
- the carboxylic acid include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, caproic acid, and lactic acid.
- An amino acid has an effect of improving dispersibility of abrasive grains (particularly abrasive grains containing a hydroxide of the tetravalent metal element) and further improving the polishing rate of the insulating material.
- amino acids arginine, lysine, aspartic acid, glutamic acid, asparagine, glutamine, histidine, proline, tyrosine, tryptophan, serine, threonine, glycine, alanine, ⁇ -alanine, methionine, cysteine, phenylalanine, leucine, valine, isoleucine, etc. Can be mentioned.
- the water-soluble polymer has flatness, in-plane uniformity, polishing selectivity of silicon oxide with respect to silicon nitride (silicon oxide polishing rate / silicon nitride polishing rate), polishing selectivity of silicon oxide with respect to polysilicon (of silicon oxide) This has the effect of adjusting polishing characteristics such as (polishing rate / polysilicon polishing rate).
- the “water-soluble polymer” is defined as a polymer that dissolves 0.1 g or more in 100 g of water. The polymer corresponding to the first additive and the second additive is not included in the “water-soluble polymer”.
- water-soluble polymer examples are not particularly limited, and are polysaccharides such as alginic acid, pectic acid, carboxymethylcellulose, agar, curdlan, dextrin, cyclodextrin, pullulan; polyvinyl alcohol, polyvinylpyrrolidone, polyacrolein, etc. And vinyl polymers; glycerin polymers such as polyglycerin and polyglycerin derivatives; A water-soluble polymer can be used individually or in combination of 2 or more types.
- the lower limit of the content of the water-soluble polymer is 0 on the basis of the total mass of the abrasive from the viewpoint of obtaining the effect of adding the water-soluble polymer while suppressing sedimentation of the abrasive grains.
- 0.0001 mass% or more is preferable, 0.001 mass% or more is more preferable, and 0.01 mass% or more is still more preferable.
- the upper limit of the content of the water-soluble polymer is preferably 10% by mass or less, preferably 5% by mass based on the total mass of the abrasive, from the viewpoint of obtaining the effect of adding the water-soluble polymer while suppressing sedimentation of the abrasive grains.
- the liquid medium in the abrasive according to this embodiment is not particularly limited, but water such as deionized water or ultrapure water is preferable.
- the content of the liquid medium may be the remainder of the abrasive excluding the content of other components, and is not particularly limited.
- the pH of the abrasive according to this embodiment is preferably 3.0 or more and 12.0 or less from the viewpoint of further excellent storage stability of the abrasive and polishing rate of the insulating material.
- the pH is defined as the pH at a liquid temperature of 25 ° C.
- the pH of the abrasive mainly affects the polishing rate.
- the lower limit of pH is more preferably 4.0 or more, further preferably 4.5 or more, and particularly preferably 5.0 or more.
- the upper limit of the pH is more preferably 11.0 or less, further preferably 10.0 or less, particularly preferably 9.0 or less, particularly preferably 8.0 or less, from the viewpoint of further improving the polishing rate of the insulating material. 0.0 or less is very preferable.
- the pH of the polishing agent can be adjusted by a pH adjusting agent such as an acid component such as an inorganic acid or an organic acid; an alkali component such as ammonia, sodium hydroxide, tetramethylammonium hydroxide (TMAH), or imidazole.
- a buffering agent may be used, and a buffer solution (a solution containing a buffering agent) may be used as the buffering agent. Examples of such a buffer include acetate buffer and phthalate buffer.
- the pH of the abrasive according to this embodiment can be measured with a pH meter (for example, model number PHL-40 manufactured by Electrochemical Instrument Co., Ltd.). Specifically, for example, after calibrating two pH meters using a phthalate pH buffer solution (pH 4.01) and a neutral phosphate pH buffer solution (pH 6.86) as standard buffers, The value is measured after the electrode is placed in an abrasive and stabilized after 2 minutes or more. At this time, the liquid temperature of the standard buffer and the abrasive is both 25 ° C.
- a pH meter for example, model number PHL-40 manufactured by Electrochemical Instrument Co., Ltd.
- the abrasive according to this embodiment may be stored as a one-part abrasive containing at least the abrasive grains, the first additive, the second additive, and a liquid medium.
- the first liquid) and the additive liquid (second liquid) are mixed and stored as a two-component abrasive set in which the constituents of the abrasive are divided into a slurry and an additive liquid so as to become the abrasive. May be.
- the slurry includes at least abrasive grains and a liquid medium, for example.
- the additive liquid includes at least a first additive, a second additive, and a liquid medium, for example.
- a 1st additive, a 2nd additive, and another additive are contained in an additive liquid among slurry and an additive liquid.
- the constituents of the abrasive may be stored as an abrasive set divided into three or more liquids.
- the slurry and additive liquid are mixed immediately before or during polishing to produce an abrasive.
- the one-component abrasive may be stored as an abrasive stock solution in which the content of the liquid medium is reduced, and may be diluted with the liquid medium during polishing.
- the two-component abrasive set may be stored as a slurry storage solution and an additive storage solution with a reduced content of the liquid medium, and may be diluted with the liquid medium during polishing.
- the method of supplying the abrasive onto the polishing surface plate is to supply the abrasive directly by feeding; the storage liquid for abrasive and the liquid medium are sent through separate pipes.
- the polishing rate can be adjusted by arbitrarily changing the mixing ratio of these two components.
- methods for supplying the abrasive onto the polishing surface plate include the following methods. For example, a method in which slurry and additive liquid are fed through separate pipes, and these pipes are combined, mixed and supplied; a slurry storage liquid, an additive liquid storage liquid, and a liquid medium are fed through separate pipes.
- a method in which these are merged and mixed and supplied; a method in which slurry and additive liquid are mixed in advance; a method in which slurry storage liquid, storage liquid for additive liquid, and liquid medium are mixed and supplied in advance Can do.
- polishing agent set on a polishing surface plate, respectively can also be used.
- the surface to be polished is polished using an abrasive obtained by mixing the slurry and the additive liquid on the polishing platen.
- the abrasive set according to the present embodiment may be divided into an abrasive containing at least the essential components and an additive liquid containing at least an optional component such as an oxidizing agent (for example, hydrogen peroxide). .
- polishing is performed using a mixed liquid obtained by mixing the abrasive and the additive liquid (the mixed liquid also corresponds to “abrasive”).
- the abrasive set according to the present embodiment is an abrasive set divided into three or more liquids, a liquid containing at least a part of the essential components, a liquid containing at least the remainder of the essential components, and an optional component.
- the mode may be divided into the additive solution containing at least.
- Each liquid constituting the abrasive set may be stored as a storage liquid in which the content of the liquid medium is reduced.
- the substrate polishing method may include a polishing step of polishing the surface to be polished of the substrate using the abrasive.
- the abrasive is supplied between the material to be polished and the polishing pad in a state where the material to be polished of the substrate having the material to be polished is pressed against the polishing pad (polishing cloth) of the polishing surface plate.
- the substrate and the polishing surface plate are moved relatively to polish the material to be polished.
- at least a part of the material to be polished is removed by polishing.
- the substrate polishing method may include a polishing step of polishing the surface to be polished of the substrate using an abrasive obtained by mixing the slurry and additive liquid in the abrasive set.
- the method for polishing the substrate may further include a step of obtaining an abrasive by mixing the slurry and the additive liquid before the polishing step.
- the slurry and the additive liquid in the abrasive set are supplied between the material to be polished and the polishing pad, and the substrate is coated with the abrasive obtained by mixing the slurry and the additive liquid.
- the polished surface may be polished.
- Examples of the substrate to be polished include a substrate.
- a material to be polished is formed on a substrate for manufacturing a semiconductor element (for example, a semiconductor substrate on which an STI pattern, a gate pattern, a wiring pattern, etc. are formed).
- a substrate is mentioned.
- materials to be polished include insulating materials such as silicon oxide; stopper materials such as polysilicon and silicon nitride.
- the shape of the material to be polished is not particularly limited, but for example, is a film shape (film to be polished).
- the film to be polished may be a single film or a plurality of films. When a plurality of films are exposed on the surface to be polished, they can be regarded as films to be polished.
- the material to be polished (such as an insulating material such as silicon oxide) formed on such a substrate is polished with the above-described abrasive and the excess portion is removed, so that the unevenness of the surface of the material to be polished is eliminated and the material to be polished is removed. It can be a smooth surface over the entire surface of the abrasive material.
- the abrasive according to this embodiment is preferably used for polishing a surface to be polished containing silicon oxide.
- insulation in a base body having an insulating film for example, a silicon oxide film
- the film can be polished.
- the stopper film is, for example, a film having a lower polishing rate than the insulating film, and is preferably a polysilicon film, a silicon nitride film, or the like. In such a substrate, by stopping polishing when the stopper film is exposed, it is possible to prevent the insulating film from being excessively polished, so that the flatness of the insulating film after polishing can be improved.
- a CVD method represented by a low pressure CVD method, a quasi-atmospheric pressure CVD method, a plasma CVD method, etc .; a liquid material is applied to a rotating substrate
- a spin coating method examples include a spin coating method.
- the silicon oxide film can be obtained, for example, by thermally reacting monosilane (SiH 4 ) and oxygen (O 2 ) using a low pressure CVD method.
- the silicon oxide film can be obtained by, for example, thermally reacting tetraethoxysilane (Si (OC 2 H 5 ) 4 ) and ozone (O 3 ) using a quasi-atmospheric pressure CVD method.
- a silicon oxide film can be similarly obtained by causing plasma reaction between tetraethoxysilane and oxygen.
- the silicon oxide film is obtained by applying a liquid raw material containing, for example, inorganic polysilazane, inorganic siloxane, etc. on a substrate using a spin coating method and performing a thermosetting reaction in a furnace body or the like.
- Examples of the method for forming a polysilicon film include a low pressure CVD method in which monosilane is thermally reacted, a plasma CVD method in which monosilane is subjected to plasma reaction, and the like.
- heat treatment may be performed at a temperature of 200 to 1000 ° C. as necessary.
- the silicon oxide film obtained by the above method may contain a small amount of boron (B), phosphorus (P), carbon (C), or the like in order to improve embedding properties.
- polishing method As a polishing apparatus, a general polishing apparatus having a holder capable of holding a substrate such as a semiconductor substrate having a surface to be polished and a polishing surface plate to which a polishing pad can be attached. Can be used. Each of the holder and the polishing surface plate is provided with a motor capable of changing the number of rotations. As a polishing apparatus, APPLIED MATERIALS polishing apparatus: Reflexion or the like can be used.
- polishing pad a general nonwoven fabric, foam, non-foam, or the like can be used.
- material of the polishing pad polyurethane, acrylic, polyester, acrylic-ester copolymer, polytetrafluoroethylene, polypropylene, polyethylene, poly-4-methylpentene, cellulose, cellulose ester, polyamide (for example, nylon (trade name), Aramid), polyimide, polyimide amide, polysiloxane copolymer, oxirane compound, phenol resin, polystyrene, polycarbonate, epoxy resin and the like can be used.
- foamed polyurethane and non-foamed polyurethane are particularly preferable from the viewpoint of easily obtaining an excellent polishing rate and flatness. It is preferable that the polishing pad is grooved so as to collect the abrasive.
- the polishing conditions are not limited, but the rotation speed of the surface plate is preferably 200 min ⁇ 1 or less so that the semiconductor substrate does not pop out, and the polishing pressure (processing load) applied to the semiconductor substrate is sufficient to cause polishing flaws. 100 kPa or less is preferable from the viewpoint of suppressing the above.
- the polishing agent it is preferable to continuously supply the polishing agent to the polishing pad with a pump or the like. Although there is no restriction
- the semiconductor substrate after polishing is thoroughly washed in running water to remove particles adhering to the substrate.
- dilute hydrofluoric acid or ammonia water may be used in addition to pure water, and a brush may be used to improve cleaning efficiency.
- a spin dryer or the like it is preferable to dry the semiconductor substrate after removing water droplets adhering to the semiconductor substrate using a spin dryer or the like.
- the abrasive, the abrasive set and the polishing method according to this embodiment can be suitably used for forming STI.
- the polishing rate ratio of the insulating material (for example, silicon oxide) to the stopper material (for example, polysilicon) is preferably 100 or more.
- the polishing rate ratio is less than 100, the polishing rate of the insulating material with respect to the polishing rate of the stopper material is small, and it is difficult to stop polishing at a predetermined position when forming the STI.
- the polishing rate ratio is 100 or more, it is easy to stop polishing, which is more suitable for forming STI.
- the polishing rate ratio is more preferably 300 or more, further preferably 500 or more, and particularly preferably 1000 or more.
- the abrasive, the abrasive set and the polishing method according to this embodiment can also be used for polishing the premetal insulating film.
- a constituent material of the premetal insulating film in addition to silicon oxide, for example, phosphorus-silicate glass, boron-phosphorus-silicate glass is used, and silicon oxyfluoride, fluorinated amorphous carbon, etc. are also used. it can.
- the polishing agent, the polishing agent set, and the polishing method according to this embodiment can be applied to a film other than an insulating film such as a silicon oxide film.
- insulating film such as a silicon oxide film.
- films include high dielectric constant films such as Hf-based, Ti-based, and Ta-based oxides; semiconductor films such as silicon, amorphous silicon, SiC, SiGe, Ge, GaN, GaP, GaAs, and organic semiconductors; GeSbTe Phase change film; inorganic conductive film such as ITO; polymer resin film such as polyimide, polybenzoxazole, acrylic, epoxy, and phenol.
- the polishing agent, the polishing agent set, and the polishing method according to the present embodiment are not only film-like objects to be polished, but also various types composed of glass, silicon, SiC, SiGe, Ge, GaN, GaP, GaAs, sapphire, plastic, or the like. It can also be applied to substrates.
- the polishing agent, the polishing agent set, and the polishing method according to the present embodiment are not only for manufacturing semiconductor elements, but also for image display devices such as TFTs and organic ELs; optical parts such as photomasks, lenses, prisms, optical fibers, and single crystal scintillators Optical elements such as optical switching elements and optical waveguides; light emitting elements such as solid lasers and blue laser LEDs; and magnetic storage devices such as magnetic disks and magnetic heads.
- the precipitate containing cerium hydroxide was centrifuged (4000 min ⁇ 1 , 5 minutes), and then the liquid phase was removed by decantation to perform solid-liquid separation. Further, 10 g of the obtained particles and 990 g of water were mixed, and the particles were dispersed in water using an ultrasonic cleaning machine to prepare a slurry storage liquid (particle content: 1.0 mass%).
- the measuring method is as follows. First, about 1 mL of a measurement sample (aqueous dispersion) containing 1.0% by mass of cerium hydroxide particles was placed in a 1 cm square cell, and then the cell was placed in N5. After adjusting the refractive index of the measurement sample to 1.333 and the viscosity of the measurement sample to 0.887 mPa ⁇ s, the measurement was performed at 25 ° C., and the value displayed as Unimodal Size Mean was read.
- a measurement sample (aqueous dispersion).
- About 4 mL of the measurement sample was placed in a 1 cm square cell, and the cell was installed in a spectrophotometer (device name: U3310) manufactured by Hitachi, Ltd.
- Absorbance was measured in the wavelength range of 200 to 600 nm, and the absorbance with respect to light with a wavelength of 290 nm and the absorbance with respect to light with a wavelength of 450 to 600 nm were measured.
- the absorbance for light with a wavelength of 290 nm was 1.192, and the absorbance for light with a wavelength of 450 to 600 nm was less than 0.010.
- Example 1 Polyoxyethylene styrenated phenyl ether [Daiichi Kogyo Seiyaku Co., Ltd. Neugen EA-207D, weight average molecular weight: 4500] 2% by mass, imidazole 0.08% by mass, acetic acid 0.05% by mass and water 97.87% by mass 100 g of the additive stock solution containing 50 ml, the slurry stock solution 50 g obtained above, 820 g of water, and 0.1% by weight diallyldimethylammonium chloride / acrylamide copolymer as a cationic polymer [Nittobo Medical Co., Ltd.
- Example 2 Except for the content of polyoxyethylene styrenated phenyl ether and diallyldimethylammonium chloride / acrylamide copolymer, 0.05% by mass of abrasive grains containing cerium hydroxide was used in the same manner as in Example 1, and polyoxyethylene styrene. An abrasive for CMP containing 0.5% by mass of hydrogenated phenyl ether and 0.0015% by mass of diallyldimethylammonium chloride / acrylamide copolymer was prepared.
- Example 3 Except for the content of diallyldimethylammonium chloride / acrylamide copolymer, the same procedure as in Example 2 was carried out, and 0.05% by mass of abrasive grains containing cerium hydroxide and 0.5% by mass of polyoxyethylene styrenated phenyl ether were used. %, A polishing slurry for CMP containing 0.003 mass% diallyldimethylammonium chloride / acrylamide copolymer was prepared.
- Example 4 Except for the contents of polyoxyethylene styrenated phenyl ether, imidazole and acetic acid, 0.05% by weight of abrasive grains containing cerium hydroxide and 1. An abrasive for CMP containing 0% by mass and 0.003% by mass of diallyldimethylammonium chloride / acrylamide copolymer was prepared.
- Example 5 Except for the imidazole content, the same procedure as in Example 3 was carried out, except that 0.05% by weight of abrasive grains containing cerium hydroxide, 0.5% by weight of polyoxyethylene styrenated phenyl ether, diallyldimethylammonium chloride / acrylamide. An abrasive for CMP containing 0.003% by mass of a copolymer was prepared.
- Example 6 Except for the imidazole content, the same procedure as in Example 3 was carried out, except that 0.05% by weight of abrasive grains containing cerium hydroxide, 0.5% by weight of polyoxyethylene styrenated phenyl ether, diallyldimethylammonium chloride / acrylamide. An abrasive for CMP containing 0.003% by mass of a copolymer was prepared.
- Example 7 Except for the type and content of the cationic polymer, the same procedure as in Example 3 was carried out, and 0.05% by mass of abrasive grains containing cerium hydroxide, 0.5% by mass of polyoxyethylene styrenated phenyl ether, poly An abrasive for CMP containing 0.001% by mass of allylamine [PAA-01 manufactured by Nitto Bo Medical Co., Ltd., weight average molecular weight: 1600] was prepared.
- PAA-01 manufactured by Nitto Bo Medical Co., Ltd., weight average molecular weight: 1600
- Example 8 Except for the kind of the cationic polymer, the same procedure as in Example 3 was performed, and 0.05% by mass of abrasive grains containing cerium hydroxide, 0.5% by mass of polyoxyethylene styrenated phenyl ether, diallyldimethylammonium chloride.
- Example 9 Except for the kind of the cationic polymer, the same procedure as in Example 3 was performed, and 0.05% by mass of abrasive grains containing cerium hydroxide, 0.5% by mass of polyoxyethylene styrenated phenyl ether, diallyldimethylammonium chloride.
- Example 10 Except for changing the kind of the aromatic polyoxyalkylene compound, 0.05 mass% of abrasive grains containing cerium hydroxide, polyoxyethylene alkylphenyl ether [Daiichi Kogyo Seiyaku Co., Ltd. An abrasive for CMP containing 0.5% by mass of Emulgit 49, weight average molecular weight: 3000] and 0.003% by mass of diallyldimethylammonium chloride / acrylamide copolymer was prepared.
- Comparative Example 5 0.05 mass of abrasive grains containing cerium hydroxide was carried out in the same manner as in Comparative Example 4 except that polyallylamine [PAA-01 manufactured by Nitto Bo Medical Co., Ltd., weight average molecular weight: 1600] was added as a cationic polymer. %, A polishing slurry for CMP containing 0.5% by mass of polyvinyl alcohol and 0.0001% by mass of polyallylamine was prepared.
- Example 12 In the same manner as in Example 3 except that polyethylene glycol (PEG # 4000 manufactured by Lion Corporation, weight average molecular weight: 4000) was used in place of the aromatic polyoxyalkylene compound, abrasive grains containing cerium hydroxide were reduced to 0. An abrasive for CMP containing 0.05% by mass, 0.5% by mass of polyethylene glycol, and 0.003% by mass of diallyldimethylammonium chloride / acrylamide copolymer was prepared.
- polyethylene glycol PEG # 4000 manufactured by Lion Corporation, weight average molecular weight: 4000
- abrasive grains containing cerium hydroxide were reduced to 0.
- An abrasive for CMP containing 0.05% by mass, 0.5% by mass of polyethylene glycol, and 0.003% by mass of diallyldimethylammonium chloride / acrylamide copolymer was prepared.
- Example 13 Cerium hydroxide in the same manner as in Example 3 except that polyoxyethylene styrenated phenyl ether (Neugen EA-137 manufactured by Daiichi Kogyo Seiyaku Co., Ltd., weight average molecular weight: 700) was used as the aromatic polyoxyalkylene compound.
- An abrasive for CMP containing 0.05% by mass of abrasive grains containing a product, 0.5% by mass of polyoxyethylene styrenated phenyl ether, and 0.003% by mass of diallyldimethylammonium chloride / acrylamide copolymer was prepared. .
- An abrasive for CMP containing 0.05% by mass of abrasive grains containing cerium hydroxide, 0.5% by mass of polyglycerin, and 0.002% by mass of polyallylamine by mixing 20 g of an aqueous solution. Prepared.
- a cerium hydroxide was prepared in the same manner as in Example 7 except that polyoxyethylene polyglyceryl ether (SC-E2000, Sakamoto Yakuhin Kogyo Co., Ltd., weight average molecular weight: 2000) was used instead of the aromatic polyoxyalkylene compound.
- a polishing slurry for CMP containing 0.05% by mass of abrasive grains, 0.5% by mass of polyoxyethylene polyglyceryl ether, and 0.001% by mass of polyallylamine was prepared.
- PH Measurement temperature: 25 ⁇ 5 ° C
- Measuring device manufactured by Electrochemical Instrument Co., Ltd., model number PHL-40 Measurement method: After calibrating two points using a standard buffer (phthalate pH buffer, pH: 4.01 (25 ° C.); neutral phosphate pH buffer, pH 6.86 (25 ° C.)), The electrode was placed in a CMP abrasive and the pH after the passage of 2 minutes or more and stabilized was measured with the measuring device.
- a standard buffer phthalate pH buffer, pH: 4.01 (25 ° C.); neutral phosphate pH buffer, pH 6.86 (25 ° C.)
- the average particle diameter of the abrasive grains in the CMP polishing slurry was measured using a product name: N5 manufactured by Beckman Coulter.
- the measuring method is as follows. First, about 1 mL of a CMP abrasive was placed in a 1 cm square cell, and then the cell was placed in N5. After adjusting the refractive index of the measurement sample to 1.333 and the viscosity of the measurement sample to 0.887 mPa ⁇ s, the measurement was performed at 25 ° C., and the value displayed as Unimodal Size Mean was read.
- ⁇ CMP evaluation> The substrate to be polished was polished under the following polishing conditions using each of the CMP polishing agents. However, in Comparative Example 1, the pattern wafer was not polished.
- Polishing device Reflexion (manufactured by APPLIED MATERIALS) -CMP abrasive flow rate: 200 mL / min-Polishing substrate: "Pattern without pattern” and “Pattern wafer” below Polishing pad: foamed polyurethane resin with closed cells (Rohm and Haas Japan, model number IC1010) Polishing pressure: 16.5 kPa (2.4 psi) -Relative speed between substrate and polishing platen: 85 m / min-Polishing time: Blanket wafer was polished for 1 minute. The pattern wafer was polished until the polysilicon film as a stopper film was exposed.
- a substrate was used.
- a pattern wafer on which a simulated pattern was formed As a pattern wafer on which a simulated pattern was formed, a 764 wafer (trade name, diameter: 300 mm) manufactured by SEMATECH was used.
- the patterned wafer is formed by depositing a polysilicon film as a stopper film on a silicon substrate, forming a trench in an exposure process, and silicon oxide as an insulating film on the silicon substrate and the polysilicon film so as to fill the polysilicon film and the trench. It was a wafer obtained by laminating a film (SiO 2 film).
- the silicon oxide film was formed by the HDP (High Density Plasma) method.
- the pattern wafer As the pattern wafer, a wafer having a line & space of 100 ⁇ m pitch and a convex pattern density of 20%, 30%, 50%, 80% was used.
- the pattern wafer has a pattern in which active parts (convex parts) masked with a polysilicon film and trench parts (concave parts) in which grooves are formed are alternately arranged as a simulated pattern.
- the line and space has a pitch of 100 ⁇ m means that the total width of the line portion and the space portion is 100 ⁇ m.
- the line and space is 100 ⁇ m pitch and the convex pattern density is 20%” means a pattern in which convex portions having a convex portion width of 20 ⁇ m and concave portions having a width of 80 ⁇ m are alternately arranged.
- the film thickness of the silicon oxide film was 600 nm on both the silicon substrate and the polysilicon film. Specifically, as shown in FIG. 1, the thickness of the polysilicon film 2 on the silicon substrate 1 is 150 nm, the thickness of the convex portion of the silicon oxide film 3 is 600 nm, and the concave portion of the silicon oxide film 3 is formed. The thickness of the concave portion of the silicon oxide film 3 was 500 nm (trench depth 350 nm + polysilicon film thickness 150 nm).
- the wafer is polished using a known CMP polishing agent capable of obtaining self-stop property (a characteristic that the polishing rate decreases when the remaining step of the simulated pattern is reduced), and the remaining step is 100 nm or less.
- the wafer in the state was used. Specifically, using an abrasive in which HS-8005-D4 manufactured by Hitachi Chemical Co., Ltd., HS-7303GP manufactured by Hitachi Chemical Co., Ltd., and water are mixed at a ratio of 2: 1.2: 6.8, A wafer was used in which the silicon oxide film thickness of the protrusions at the 100 ⁇ m pitch and the protrusion pattern density of 50% was polished to 100 nm.
- the number of polishing flaws of 0.2 ⁇ m or more on the surface of the film to be polished was found to be 1 to 10. In all of Comparative Examples 1 to 17, the number was about 0 to 3 (pieces / wafer), and the generation of polishing flaws was sufficiently suppressed.
- the film thickness of the silicon oxide remaining in the portion was measured (in the table, the number with * indicates the remaining silicon oxide film) Indicates thickness). In this case, the difference in the polysilicon film thickness is not measured.
- Tables 1 to 5 show the measurement results obtained in Examples 1 to 10 and Comparative Examples 1 to 17, respectively.
- polyoxyethylene styrenated phenyl ether (Daiichi Kogyo Seiyaku Co., Ltd. Neugen EA-207D, weight average molecular weight: 4500] is the following compound corresponding to the above formula (I) and formula (III).
- ⁇ R 11 styrenated phenyl group ⁇ R 12, R 31: an ethylene group ⁇ m1, m3: 100 ⁇ M2: 1 ⁇ 3
- polyoxyethylene alkylphenyl ether [Daiichi Kogyo Seiyaku Co., Ltd. Emulgit 49, weight average molecular weight: 3000] is the following compound corresponding to the said Formula (I) and Formula (IV).
- ⁇ R 11 alkyl phenyl group ⁇ R 12, R 42: an ethylene group ⁇ R 41: nonyl ⁇ m1, m4: 70
- Example 1 in the pattern wafer evaluation, the polysilicon film thickness difference at the time when the polysilicon film was exposed was 5 nm, and it was 6 nm even if it was further etched for 25 seconds, which depends on the convex pattern density compared to the comparative example. As a result, the result of suppressing the polishing of the polysilicon film was obtained.
- Example 2 in the pattern wafer evaluation, the polysilicon film thickness difference at the time when the polysilicon film was exposed was 2 nm, and even if it was further etched for 33 seconds, it was 5 nm, which depends on the convex pattern density compared to the comparative example. As a result, the result of suppressing the polishing of the polysilicon film was obtained.
- Example 3 in the pattern wafer evaluation, the polysilicon film thickness difference at the time when the polysilicon film was exposed was 2 nm, and even if it was further etched for 25 seconds, it was 5 nm, which depends on the convex pattern density compared to the comparative example. As a result, the result of suppressing the polishing of the polysilicon film was obtained.
- Example 4 in the pattern wafer evaluation, the polysilicon film thickness difference at the time when the polysilicon film was exposed was 4 nm, and even if it was further etched for 23 seconds, it was 9 nm, which depends on the convex pattern density compared to the comparative example. As a result, the result of suppressing the polishing of the polysilicon film was obtained.
- Example 5 in the pattern wafer evaluation, the polysilicon film thickness difference at the time when the polysilicon film was exposed was 2 nm, and even if it was further etched for 22 seconds, it was 3 nm, which depends on the convex pattern density compared to the comparative example. As a result, the result of suppressing the polishing of the polysilicon film was obtained.
- Example 6 in the pattern wafer evaluation, the polysilicon film thickness difference at the time when the polysilicon film was exposed was 2 nm, and it was 2 nm even if it was further etched for 21 seconds, which depends on the convex pattern density compared to the comparative example. As a result, the result of suppressing the polishing of the polysilicon film was obtained.
- Example 7 in the pattern wafer evaluation, the polysilicon film thickness difference at the time when the polysilicon film was exposed was 2 nm, and even if it was further etched for 30 seconds, it was 4 nm, which depends on the convex pattern density compared to the comparative example. As a result, the result of suppressing the polishing of the polysilicon film was obtained.
- Example 8 in the pattern wafer evaluation, the polysilicon film thickness difference at the time when the polysilicon film was exposed was 2 nm, and even if it was further etched for 25 seconds, it was 4 nm. As a result, the result of suppressing the polishing of the polysilicon film was obtained.
- Example 9 in the pattern wafer evaluation, the difference in the polysilicon film thickness when the polysilicon film was exposed was 3 nm, and it was 9 nm even if it was further etched for 24 seconds, which depends on the convex pattern density compared to the comparative example As a result, the result of suppressing the polishing of the polysilicon film was obtained.
- Example 10 in the pattern wafer evaluation, the difference in the polysilicon film thickness when the polysilicon film was exposed was 4 nm, and it was 9 nm even if it was further etched for 25 seconds. As a result, the result of suppressing the polishing of the polysilicon film was obtained.
- the SiO 2 RR was 163 nm / min
- the p-SiRR was 62 nm / min
- the polishing rate ratio was 3.
- the polysilicon film thickness difference at the time when the polysilicon film was exposed was 13 nm, and it was 33 nm when it was further etched for 27 seconds.
- the polysilicon film thickness difference at the time when the polysilicon film was exposed was 18 nm, and when it was further etched for 22 seconds, it was 21 nm.
- the polysilicon film thickness difference when the polysilicon film was exposed was 25 nm, and when it was further etched for 17 seconds, it was 30 nm.
- the polysilicon film thickness difference at the time when the polysilicon film was exposed was 10 nm, and when it was further etched for 30 seconds, it was 13 nm.
- the polysilicon film thickness difference when the polysilicon film was exposed was 5 nm, and when it was further etched for 23 seconds, it was 20 nm.
- the polysilicon film thickness difference at the time when the polysilicon film was exposed was 16 nm, and it was 36 nm when further etched for 23 seconds.
- the polysilicon film thickness difference at the time when the polysilicon film was exposed was 25 nm, and when it was further etched for 15 seconds, it was 41 nm.
- the polysilicon film thickness difference when the polysilicon film was exposed was 22 nm, and when it was further etched for 30 seconds, it was 45 nm.
- the polishing selectivity of the insulating material with respect to the stopper material can be improved, and the polishing of the insulating material using the stopper depends on the convex pattern density even when over-polishing is performed.
- polishing agent capable of suppressing the polishing rate of polysilicon without depending on the pattern density.
- a polishing agent set capable of suppressing the polishing rate of polysilicon without depending on the pattern density.
- CMP technology for flattening a shallow trench isolation insulating material, a premetal insulating material, an interlayer insulating material, etc.
- polishing the insulating material using a stopper it does not depend on the convex pattern density.
- polish the insulating material with low polishing scratches while improving the polishing selectivity of the insulating material with respect to the stopper material.
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Abstract
Description
R11-O-(R12-O)m1-H …(I)
[式(I)中、R11は、置換基を有していてもよいアリール基を表し、R12は、置換基を有していてもよい炭素数1~5のアルキレン基を表し、m1は、15以上の整数を表す。]
本明細書において、「研磨剤」(abrasive)とは、研磨時に被研磨面に触れる組成物として定義される。「研磨剤」という語句自体は、研磨剤に含有される成分をなんら限定しない。後述するように、本実施形態に係る研磨剤は砥粒(abrasive grain)を含有する。砥粒は、「研磨粒子」(abrasive
particle)ともいわれるが、本明細書では「砥粒」という。砥粒は、一般的には固体粒子である。この場合、研磨時に、砥粒が有する機械的作用、及び、砥粒(主に砥粒の表面)が有する化学的作用によって、除去対象物が除去(remove)されると考えられるが、メカニズムはこれに限定されない。
本実施形態に係る研磨剤は、例えばCMP用研磨剤である。具体的には、本実施形態に係る研磨剤は、液状媒体と、4価金属元素の水酸化物を含む砥粒と、添加剤とを少なくとも含有し、前記添加剤として、芳香環及びポリオキシアルキレン鎖を有する高分子化合物(以下、「芳香族ポリオキシアルキレン化合物」という。)と、陽イオン性ポリマとを少なくとも含有する。以下、必須成分、及び、任意に添加できる成分について説明する。
本実施形態に係る研磨剤の砥粒は、4価金属元素の水酸化物を含む。「4価金属元素の水酸化物」は、4価の金属(M4+)と、少なくとも一つの水酸化物イオン(OH-)とを含む化合物である。4価金属元素の水酸化物は、水酸化物イオン以外の陰イオン(例えば、硝酸イオンNO3 -、硫酸イオンSO4 2-)を含んでいてもよい。例えば、4価金属元素の水酸化物は、4価金属元素に結合した陰イオン(例えば硝酸イオン、硫酸イオン)を含んでいてもよい。前記4価金属元素の水酸化物を含む砥粒は、シリカ、アルミナ、セリア等からなる従来の砥粒と比較して、絶縁材料(例えば酸化珪素)との反応性が高く、絶縁材料を高研磨速度で研磨できる。
検出器:株式会社日立製作所製、UV-VISディテクター、商品名「L-4200」、波長:400nm
インテグレータ:株式会社日立製作所製、GPCインテグレータ、商品名「D-2500」
ポンプ:株式会社日立製作所製、商品名「L-7100」
カラム:日立化成株式会社製、水系HPLC用充填カラム、商品名「GL-W550S」
溶離液:脱イオン水
測定温度:23℃
流速:1mL/分(圧力:40~50kg/cm2程度)
測定時間:60分
本実施形態に係る研磨剤は、添加剤を含有する。ここで「添加剤」とは、研磨速度、研磨選択性等の研磨特性;砥粒の分散性、保存安定性等の研磨剤特性などを調整するために、液状媒体及び砥粒以外に研磨剤が含有する物質を指す。
本実施形態に係る研磨剤は、第1の添加剤として芳香族ポリオキシアルキレン化合物(芳香環及びポリオキシアルキレン鎖を有する高分子化合物)を含有する。芳香族ポリオキシアルキレン化合物は、芳香環を有する置換基をポリオキシアルキレン鎖の末端に導入した化合物である。芳香環は、ポリオキシアルキレン鎖に直接結合していてもよく、直接結合していなくてもよい。芳香環は、単環であってもよく、多環であってもよい。芳香族ポリオキシアルキレン化合物は、芳香環を有する置換基を介して複数のポリオキシアルキレン鎖が結合する構造を有していてもよい。ポリオキシアルキレン鎖は、ポリオキシエチレン鎖、ポリオキシプロピレン鎖が好ましい。ポリオキシアルキレン鎖の構造単位数は、15以上が好ましい。
R11-O-(R12-O)m1-H …(I)
[式(I)中、R11は、置換基を有していてもよいアリール基を表し、R12は、置換基を有していてもよい炭素数1~5のアルキレン基を表し、m1は、15以上の整数を表す。]
H-(O-R23)n1-O-R21-R25-R22-O-(R24-O)n2-H …(II)
[式(II)中、R21及びR22は、それぞれ独立に、置換基を有していてもよいアリーレン基を表し、R23、R24及びR25は、それぞれ独立に、置換基を有していてもよい炭素数1~5のアルキレン基を表し、n1及びn2は、それぞれ独立に15以上の整数を表す。]
・R11としては、芳香環を有する置換基として例示した上記のアリール基が好ましく、アルキル基又はスチレン基が置換基として導入されたフェニル基がより好ましい。
・R21及びR22としては、芳香環を有する置換基として例示した上記のアリーレン基が好ましい。
・R12、R23、R24及びR25としては、エチレン基、n-プロピレン基が好ましい。
・m1は、15以上が好ましく、30以上がより好ましく、45以上が更に好ましく、60以上が特に好ましい。
・m1は、2000以下が好ましく、900以下がより好ましく、600以下が更に好ましく、300以下が特に好ましい。
・n1及びn2は、15以上が好ましく、30以上がより好ましい。
・n1及びn2は、2000以下が好ましく、900以下がより好ましく、600以下が更に好ましく、300以下が特に好ましい。
・R31としては、エチレン基、n-プロピレン基が好ましく、エチレン基がより好ましい。
・R41としては、炭素数1~40のアルキル基が好ましく、炭素数6~20のアルキル基がより好ましい。
・R42としては、エチレン基、n-プロピレン基が好ましく、エチレン基がより好ましい。
・m2は、1以上が好ましい。
・m3は、15以上が好ましく、30以上がより好ましく、45以上が更に好ましく、60以上が特に好ましい。
・m3は、2000以下が好ましく、900以下がより好ましく、600以下が更に好ましく、300以下が特に好ましい。
・m4は、15以上が好ましく、30以上がより好ましく、45以上が更に好ましく、60以上が特に好ましい。
・m4は、2000以下が好ましく、900以下がより好ましく、600以下が更に好ましく、300以下が特に好ましい。
・式(IV)の芳香環がR41以外に更に有する置換基としては、プロペニル基が好ましい。
ポリオキシエチレンフェニルエーテル、ポリオキシプロピレンフェニルエーテル、ポリオキシエチレンクミルフェニルエーテル、ポリオキシエチレンベンジルエーテル;
ポリオキシエチレンスチレン化フェニルエーテル(例えば、花王株式会社製、エマルゲンA-500;第一工業製薬株式会社製、ノイゲンEA-7シリーズ)等の前記式(III)で表される芳香族ポリオキシアルキレン化合物;
ポリオキシエチレンアルキルフェニルエーテル(例えば、第一工業製薬株式会社製、エマルジットシリーズ)、ポリオキシエチレンノニルプロペニルフェニルエーテル(例えば、第一工業製薬株式会社製、アクアロンRNシリーズ)等の式(IV)で表される芳香族ポリオキシアルキレン化合物;などが挙げられる。
使用機器:日立L-6000型〔株式会社日立製作所製〕
カラム:ゲルパックGL-R420+ゲルパックGL-R430+ゲルパックGL-R440〔日立化成株式会社製 商品名、計3本〕
溶離液:テトラヒドロフラン
測定温度:40℃
流量:1.75mL/分
検出器:L-3300RI〔株式会社日立製作所製〕
本実施形態に係る研磨剤は、前記第1の添加剤(芳香族ポリオキシアルキレン化合物)の他に、第2の添加剤として陽イオン性ポリマを含有する。「陽イオン性ポリマ」とは、カチオン基、又は、カチオン基にイオン化され得る基を主鎖又は側鎖に有するポリマとして定義される。カチオン基としては、アミノ基、イミノ基、シアノ基等が挙げられる。
本実施形態に係る研磨剤は、研磨特性を調整する目的で、前記第1の添加剤及び前記第2の添加剤の他に、その他の添加剤を更に含有していてもよい。その他の添加剤としては、カルボン酸、アミノ酸、水溶性高分子、酸化剤(例えば過酸化水素)、並びに、後述するpH調整剤及び緩衝剤等が挙げられる。これらは単独で又は二種類以上を組み合わせて使用できる。
本実施形態に係る研磨剤における液状媒体は、特に制限はないが、脱イオン水、超純水等の水が好ましい。液状媒体の含有量は、他の構成成分の含有量を除いた研磨剤の残部でよく、特に限定されない。
本実施形態に係る研磨剤のpHは、研磨剤の保存安定性及び絶縁材料の研磨速度に更に優れる観点から、3.0以上12.0以下が好ましい。なお、pHは、液温25℃におけるpHと定義する。研磨剤のpHは、主に研磨速度に影響する。pHの下限は、絶縁材料の研磨速度を更に向上させる観点から、4.0以上がより好ましく、4.5以上が更に好ましく、5.0以上が特に好ましい。pHの上限は、絶縁材料の研磨速度を更に向上させる観点から、11.0以下がより好ましく、10.0以下が更に好ましく、9.0以下が特に好ましく、8.0以下が極めて好ましく、7.0以下が非常に好ましい。
本実施形態に係る基体の研磨方法は、前記研磨剤を用いて基体の被研磨面を研磨する研磨工程を備えていてもよい。研磨工程では、例えば、被研磨材料を有する基体の該被研磨材料を研磨定盤の研磨パッド(研磨布)に押圧した状態で、前記研磨剤を被研磨材料と研磨パッドとの間に供給すると共に、基体と研磨定盤とを相対的に動かして被研磨材料を研磨する。研磨工程では、例えば、被研磨材料の少なくとも一部を研磨により除去する。
350gのCe(NH4)2(NO3)650質量%水溶液(日本化学産業株式会社製、製品名:CAN50液)を7825gの純水に溶解して溶液を得た。次いで、この溶液を攪拌しながら、750gのイミダゾール水溶液(10質量%水溶液)を5mL/分の速度で滴下して、セリウムの水酸化物を含む沈殿物を得た。
[実施例1]
ポリオキシエチレンスチレン化フェニルエーテル〔第一工業製薬株式会社製ノイゲンEA-207D、重量平均分子量:4500〕2質量%、イミダゾール0.08質量%、酢酸0.05質量%及び水97.87質量%を含有する添加液用貯蔵液100gと、前記で得たスラリ用貯蔵液50gと、水820gと、陽イオン性ポリマとして0.1質量%ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体〔ニットーボーメディカル株式会社製PAS-J-81、重量平均分子量:200000〕を含有する水溶液30gとを混合することにより、セリウムの水酸化物を含む砥粒を0.05質量%、ポリオキシエチレンスチレン化フェニルエーテルを0.2質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.003質量%含有するCMP用研磨剤を調製した。
ポリオキシエチレンスチレン化フェニルエーテル及びジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体の含有量以外は実施例1と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリオキシエチレンスチレン化フェニルエーテルを0.5質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.0015質量%含有するCMP用研磨剤を調製した。
ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体の含有量以外は実施例2と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリオキシエチレンスチレン化フェニルエーテルを0.5質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.003質量%含有するCMP用研磨剤を調製した。
ポリオキシエチレンスチレン化フェニルエーテル、イミダゾール及び酢酸の含有量以外は実施例3と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリオキシエチレンスチレン化フェニルエーテルを1.0質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.003質量%含有するCMP用研磨剤を調製した。
イミダゾールの含有量以外は実施例3と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリオキシエチレンスチレン化フェニルエーテルを0.5質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.003質量%含有するCMP用研磨剤を調製した。
イミダゾールの含有量以外は実施例3と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリオキシエチレンスチレン化フェニルエーテルを0.5質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.003質量%含有するCMP用研磨剤を調製した。
陽イオン性ポリマの種類と含有量以外は実施例3と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリオキシエチレンスチレン化フェニルエーテルを0.5質量%、ポリアリルアミン〔ニットーボーメディカル株式会社製PAA-01、重量平均分子量:1600〕を0.001質量%含有するCMP用研磨剤を調製した。
陽イオン性ポリマの種類以外は実施例3と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリオキシエチレンスチレン化フェニルエーテルを0.5質量%、ジアリルジメチルアンモニウムクロリド重合体〔ニットーボーメディカル株式会社製PAS-H-10L、重量平均分子量:200000〕を0.003質量%含有するCMP用研磨剤を調製した。
陽イオン性ポリマの種類以外は実施例3と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリオキシエチレンスチレン化フェニルエーテルを0.5質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体〔ニットーボーメディカル株式会社製PAS-J-81L、重量平均分子量:10000〕を0.003質量%含有するCMP用研磨剤を調製した。
芳香族ポリオキシアルキレン化合物の種類を変更した以外は実施例3と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリオキシエチレンアルキルフェニルエーテル〔第一工業製薬株式会社製エマルジット49、重量平均分子量:3000〕を0.5質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.003質量%含有するCMP用研磨剤を調製した。
前記で得たスラリ用貯蔵液50gと、水940gと、1質量%イミダゾール水溶液10gとを混合し、セリウムの水酸化物を含む砥粒を0.05質量%含有するCMP用研磨剤を調製した。
ポリエチレングリコール〔ライオン株式会社製PEG#600、重量平均分子量:600〕5質量%、イミダゾール0.08質量%、酢酸0.05質量%及び水94.87質量%を含有する添加液用貯蔵液100gと、前記で得たスラリ用貯蔵液50gと、水850gとを混合し、セリウムの水酸化物を含む砥粒を0.05質量%、ポリエチレングリコールを0.5質量%含有するCMP用研磨剤を調製した。
ポリオキシエチレンスチレン化フェニルエーテル〔第一工業製薬株式会社製ノイゲンEA-207D、重量平均分子量:4500〕5質量%、イミダゾール0.08質量%、酢酸0.05質量%及び水94.87質量%を含有する添加液用貯蔵液100gと、前記で得たスラリ用貯蔵液50gと、水850gとを混合し、セリウムの水酸化物を含む砥粒を0.05質量%、ポリオキシエチレンスチレン化フェニルエーテルを0.5質量%含有するCMP用研磨剤を調製した。
ポリビニルアルコール〔株式会社クラレ製PVA-403、平均重合度:300、ケン化度:80モル%、重量平均分子量:14000〕5質量%、イミダゾール0.08質量%、酢酸0.05質量%及び水94.87質量%を含有する添加液用貯蔵液100gと、前記で得たスラリ用貯蔵液50gと、水850gとを混合し、セリウムの水酸化物を含む砥粒を0.05質量%、ポリビニルアルコールを0.5質量%含有するCMP用研磨剤を調製した。
陽イオン性ポリマとしてポリアリルアミン〔ニットーボーメディカル株式会社製PAA-01、重量平均分子量:1600〕を加えた以外は比較例4と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリビニルアルコールを0.5質量%、ポリアリルアミンを0.0001質量%含有するCMP用研磨剤を調製した。
陽イオン性ポリマとしてポリアリルアミン〔ニットーボーメディカル株式会社製PAA-08、重量平均分子量:8000〕を加えた以外は比較例4と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリビニルアルコールを0.5質量%、ポリアリルアミンを0.0008質量%含有するCMP用研磨剤を調製した。
芳香族ポリオキシアルキレン化合物の代わりにポリエチレングリコール〔ライオン株式会社製PEG#600、重量平均分子量:600〕を用いた以外は実施例2と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリエチレングリコールを0.5質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.0015質量%含有するCMP用研磨剤を調製した。
芳香族ポリオキシアルキレン化合物の代わりにポリエチレングリコール〔ライオン株式会社製PEG#600、重量平均分子量:600〕を用いた以外は実施例4と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリエチレングリコールを1.0質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.003質量%含有するCMP用研磨剤を調製した。
芳香族ポリオキシアルキレン化合物の代わりにポリエチレングリコール〔ライオン株式会社製PEG#600、重量平均分子量:600〕を用いた以外は実施例5と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリエチレングリコールを0.5質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.003質量%含有するCMP用研磨剤を調製した。
芳香族ポリオキシアルキレン化合物の代わりにポリエチレングリコール〔ライオン株式会社製PEG#600、重量平均分子量:600〕を用いた以外は実施例3と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリエチレングリコールを0.5質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.003質量%含有するCMP用研磨剤を調製した。
芳香族ポリオキシアルキレン化合物の代わりにポリエチレングリコール〔ライオン株式会社製PEG#600、重量平均分子量:600〕を用いた以外は実施例6と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリエチレングリコールを0.5質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.003質量%含有するCMP用研磨剤を調製した。
芳香族ポリオキシアルキレン化合物の代わりにポリエチレングリコール〔ライオン株式会社製PEG#4000、重量平均分子量:4000〕を用いた以外は実施例3と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリエチレングリコールを0.5質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.003質量%含有するCMP用研磨剤を調製した。
芳香族ポリオキシアルキレン化合物としてポリオキシエチレンスチレン化フェニルエーテル〔第一工業製薬株式会社製ノイゲンEA-137、重量平均分子量:700〕を用いた以外は実施例3と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリオキシエチレンスチレン化フェニルエーテルを0.5質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.003質量%含有するCMP用研磨剤を調製した。
芳香族ポリオキシアルキレン化合物の代わりにポリオキシエチレンラウリルエーテル〔花王株式会社製エマルゲン130K〕を用いた以外は実施例3と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリオキシエチレンラウリルエーテルを0.5質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.003質量%含有するCMP用研磨剤を調製した。
芳香族ポリオキシアルキレン化合物の代わりにアセチレンジオールのEO(エチレンオキサイド)付加物〔日信化学工業株式会社製サーフィノール465〕を用いた以外は実施例3と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、アセチレンジオールのEO付加物を0.5質量%、ジアリルジメチルアンモニウムクロリド・アクリルアミド共重合体を0.003質量%含有するCMP用研磨剤を調製した。
ポリグリセリン〔阪本薬品工業株式会社製ポリグリセリン#750、重量平均分子量:750〕5質量%、イミダゾール0.08質量%、酢酸0.05質量%及び水94.87質量%を含有する添加液用貯蔵液100gと、前記で得たスラリ用貯蔵液50gと、水830gと、陽イオン性ポリマとして0.1質量%ポリアリルアミン〔ニットーボーメディカル株式会社製PAA-01、重量平均分子量:1600〕を含有する水溶液20gとを混合することにより、セリウムの水酸化物を含む砥粒を0.05質量%、ポリグリセリンを0.5質量%、ポリアリルアミンを0.002質量%含有するCMP用研磨剤を調製した。
芳香族ポリオキシアルキレン化合物の代わりにポリオキシエチレンポリグリセリルエーテル〔阪本薬品工業株式会社製SC-E2000、重量平均分子量:2000〕を用いた以外は実施例7と同様にして、セリウムの水酸化物を含む砥粒を0.05質量%、ポリオキシエチレンポリグリセリルエーテルを0.5質量%、ポリアリルアミンを0.001質量%含有するCMP用研磨剤を調製した。
前記で得られたCMP用研磨剤のpH、及び、CMP用研磨剤中の砥粒の平均粒径を下記の条件で評価した。
測定温度:25±5℃
測定装置:電気化学計器株式会社製、型番PHL-40
測定方法:標準緩衝液(フタル酸塩pH緩衝液、pH:4.01(25℃);中性リン酸塩pH緩衝液、pH6.86(25℃))を用いて2点校正した後、電極をCMP用研磨剤に入れて、2分以上経過して安定した後のpHを前記測定装置により測定した。
ベックマンコールター社製、商品名:N5を用いてCMP用研磨剤中の砥粒の平均粒径を測定した。測定法は下記のとおりである。まず、CMP用研磨剤を1cm角のセルに約1mL入れた後、N5内にセルを設置した。測定サンプルの屈折率を1.333、測定サンプルの粘度を0.887mPa・sに調整した後、25℃において測定を行い、Unimodal Size Meanとして表示される値を読み取った。
前記CMP用研磨剤のそれぞれを用いて下記研磨条件で被研磨基板を研磨した。但し、比較例1については、パターンウエハの研磨を行わなかった。
・研磨装置:Reflexion(APPLIED MATERIALS社製)
・CMP用研磨剤流量:200mL/分
・被研磨基板:下記「パターンなしウエハ」及び「パターンウエハ」
・研磨パッド:独立気泡を有する発泡ポリウレタン樹脂(ローム・アンド・ハース・ジャパン株式会社製、型番IC1010)
・研磨圧力:16.5kPa(2.4psi)
・基板と研磨定盤との相対速度:85m/分
・研磨時間:ブランケットウエハは、1分間研磨を行った。パターンウエハは、ストッパ膜であるポリシリコン膜が露出するまで研磨を行った。また、ポリシリコン膜が露出するまでにかかった研磨時間と同じ時間更に削り込んでポリシリコン膜の膜厚差の広がり度合いの確認を行った。
・洗浄:CMP処理後、超音波水による洗浄を行った後、スピンドライヤで乾燥させた。
パターンが形成されていないブランケットウエハとして、厚さ1μmの酸化珪素膜をシリコン基板上にプラズマCVD法で形成した基板と、厚さ0.2μmのポリシリコン膜をシリコン基板上にCVD法で形成した基板とを用いた。
模擬パターンが形成されたパターンウエハとして、SEMATECH社製、764ウエハ(商品名、直径:300mm)を用いた。該パターンウエハは、ストッパ膜としてポリシリコン膜をシリコン基板上に積層後、露光工程においてトレンチを形成し、ポリシリコン膜及びトレンチを埋めるようにシリコン基板及びポリシリコン膜の上に絶縁膜として酸化珪素膜(SiO2膜)を積層することにより得られたウエハであった。酸化珪素膜は、HDP(High Density Plasma)法により成膜されたものであった。
[ブランケットウエハ研磨速度]
前記条件で研磨及び洗浄した被研磨基板について、各被研磨膜(酸化珪素膜、ポリシリコン膜)の研磨速度(酸化珪素膜の研磨速度:SiO2RR、ポリシリコン膜の研磨速度:p-SiRR)を次式より求めた。なお、研磨前後での各被研磨膜の膜厚差は、光干渉式膜厚装置(フィルメトリクス社製、商品名:F80)を用いて求めた。
(研磨速度:RR)=(研磨前後での各被研磨膜の膜厚差(nm))/(研磨時間(分))
前記条件で研磨及び洗浄した被研磨基板(ブランケットウエハ)を0.5質量%のフッ化水素の水溶液に15秒間浸漬した後に、60秒間水洗した。続いて、PVAブラシで被研磨膜表面を、水を供給しながら1分間洗浄した後に、乾燥させた。APPLIED MATERIALS製Complusを用いて、被研磨膜表面の0.2μm以上の欠陥を検出した。更に、Complusで得られた欠陥検出座標とAPPLIED MATERIALS製SEM Visionを用いて、被研磨膜表面を観測したところ、被研磨膜表面における0.2μm以上の研磨傷の個数は、実施例1~10及び比較例1~17のいずれにおいても0~3(個/ウエハ)程度であり、研磨傷の発生が充分に抑制されていた。
凸部パターン密度が異なる各部分について、前記条件で研磨及び洗浄したパターンウエハの凸部におけるポリシリコン膜の残膜厚を測定した。ポリシリコン膜厚の凸部パターン密度に対する依存性を評価するため、凸部パターン密度が異なる各部分について測定して得られたポリシリコン膜厚における最大値と最小値の差を次式より求めた。なお、研磨前後での各被研磨膜の膜厚は、光干渉式膜厚装置(ナノメトリクス社製、商品名:Nanospec AFT-5100)を用いて求めた。
ポリシリコン膜厚の差(nm)=(ポリシリコン膜厚の最大値(nm))-(ポリシリコン膜厚の最小値(nm))
・R11:スチレン化フェニル基
・R12、R31:エチレン基
・m1、m3:100
・m2:1~3
・R11:アルキルフェニル基
・R12、R42:エチレン基
・R41:ノニル基
・m1、m4:70
Claims (8)
- 液状媒体と、4価金属元素の水酸化物を含む砥粒と、芳香環及びポリオキシアルキレン鎖を有する高分子化合物と、陽イオン性ポリマと、を含有し、
前記高分子化合物の重量平均分子量が1000以上である、研磨剤。 - 前記4価金属元素が、希土類元素及びジルコニウムからなる群より選択される少なくとも一種を含む、請求項1に記載の研磨剤。
- 前記高分子化合物の含有量が、研磨剤の全質量を基準として0.01質量%以上である、請求項1又は2に記載の研磨剤。
- 前記高分子化合物が、下記一般式(I)で表される化合物を含む、請求項1~3のいずれか一項に記載の研磨剤。
R11-O-(R12-O)m1-H …(I)
[式(I)中、R11は、置換基を有していてもよいアリール基を表し、R12は、置換基を有していてもよい炭素数1~5のアルキレン基を表し、m1は、15以上の整数を表す。] - 酸化珪素を含む被研磨面を研磨するために使用される、請求項1~4のいずれか一項に記載の研磨剤。
- 請求項1~5のいずれか一項に記載の研磨剤の構成成分が第1の液と第2の液とに分けて保存され、前記第1の液が前記砥粒及び液状媒体を含み、前記第2の液が前記高分子化合物、前記陽イオン性ポリマ及び液状媒体を含む、研磨剤セット。
- 請求項1~5のいずれか一項に記載の研磨剤を用いて基体の被研磨面を研磨する工程を備える、基体の研磨方法。
- 請求項6に記載の研磨剤セットにおける前記第1の液と前記第2の液とを混合して得られる研磨剤を用いて基体の被研磨面を研磨する工程を備える、基体の研磨方法。
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