WO2013190871A1 - Light source-integrated optical sensor - Google Patents

Light source-integrated optical sensor Download PDF

Info

Publication number
WO2013190871A1
WO2013190871A1 PCT/JP2013/057074 JP2013057074W WO2013190871A1 WO 2013190871 A1 WO2013190871 A1 WO 2013190871A1 JP 2013057074 W JP2013057074 W JP 2013057074W WO 2013190871 A1 WO2013190871 A1 WO 2013190871A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
light source
source integrated
substrate
heat
Prior art date
Application number
PCT/JP2013/057074
Other languages
French (fr)
Japanese (ja)
Inventor
伸一 眞▲崎▼
井上　修二
Original Assignee
アオイ電子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アオイ電子株式会社 filed Critical アオイ電子株式会社
Priority to PCT/JP2013/066919 priority Critical patent/WO2013191235A1/en
Priority to JP2014521500A priority patent/JP6133287B2/en
Priority to CN201380032199.XA priority patent/CN104396026B/en
Priority to TW102121883A priority patent/TWI581449B/en
Publication of WO2013190871A1 publication Critical patent/WO2013190871A1/en
Priority to JP2017001219A priority patent/JP6312872B2/en

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
    • G01S7/4813—Housing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

Definitions

  • the present invention relates to a light source integrated optical sensor.
  • a light source integrated optical sensor in which a light emitting chip and a light receiving chip provided on a substrate are covered with a transparent resin, a groove is formed in the transparent resin between the light emitting chip and the light receiving chip, and the groove is filled with a light shielding resin. (See Patent Document 1).
  • the flat shape of the surface of the transparent resin on the light-receiving chip is damaged due to the heat generated in the light-emitting chip, and there is a risk of deformation or alteration or discoloration.
  • the deformation or discoloration of the surface of the transparent resin on the light receiving chip leads to deterioration of light receiving characteristics such as a decrease in light receiving sensitivity.
  • the light source integrated optical sensor includes a light receiving unit provided in a predetermined region on the substrate, a light emitting unit provided in a region different from the light receiving unit on the substrate, and the light receiving unit.
  • a first light transmissive member provided to cover the light receiving portion; a second light transmissive member provided on the light emitting portion to cover the light emitting portion; a first light transmissive member and a second light transmissive member; And a heat-dissipating member in contact with each of the first light-transmitting member, the second light-transmitting member, and the light-shielding member.
  • the heat radiating member has an opening at a position corresponding to the light emitting part and the light receiving part, and the first light transmissive member and the second light transmissive member are provided. It is preferable to use a planar member that is in contact with the surface formed by the optical member and the light shielding member from above.
  • the heat conducting member that is in contact with the substrate and the heat radiating member in place of the light shielding member or along the light shielding member is further provided. You may prepare.
  • the heat conducting member is in contact with a through hole provided in the substrate.
  • the heat radiating member is constituted by a second light-shielding member that surrounds the substrate and has thermal conductivity.
  • the heat dissipating member in the light source integrated optical sensor according to the fifth aspect, further has an opening at a position corresponding to the light emitting part and the light receiving part, and the first light transmitting member and the second light transmitting member are provided.
  • the light source integrated optical sensor according to the sixth aspect may further include a heat conducting member in contact with the substrate and the planar member.
  • the heat conducting member is preferably in contact with a through hole provided in the substrate.
  • FIG. 1 (a) is a top view
  • FIG.1 (b) is sectional drawing
  • 2 (a), FIG. 2 (b), FIG. 2 (c), and FIG. 2 (d) are diagrams for explaining a method of manufacturing a light source integrated photosensor.
  • FIG. 3 is a cross-sectional view of the light source integrated photosensor according to the first modification.
  • FIG. 4 is a cross-sectional view of a light source integrated photosensor according to a second modification.
  • FIG. 5 is a cross-sectional view of a light source integrated photosensor according to Modification 3.
  • FIG. 6 is a cross-sectional view of a light source integrated photosensor according to a fourth modification.
  • FIG. 7A and 7B are diagrams of a light source integrated photosensor according to a second embodiment, in which FIG. 7A is a top view and FIG. 7B is a cross-sectional view.
  • FIG. 8A is a top view after dicing, and FIG. 8B is a cross-sectional view.
  • FIG. 9A is a diagram in which the groove is filled with an opaque resin
  • FIG. 9B is a diagram in which the opaque resin is separated by a space.
  • FIG. 10 is a diagram for explaining the cutting and singulation of the sensor.
  • FIG. 1 is a diagram illustrating a light source integrated photosensor 1 according to a first embodiment of the invention.
  • FIG. 1A is a top view of the light source integrated photosensor 1
  • FIG. 2B is a cross-sectional view of the light source integrated photosensor 1 taken along line EE ′ in FIG.
  • the light source integrated optical sensor 1 is configured by integrally forming a light emitting element and a light receiving element on a substrate 10.
  • light emitted from the light emitting element is emitted from an opening 45 ⁇ / b> B, and reflected light reflected by an external object is reflected. It is used for the purpose of determining the presence or absence of an external object based on whether or not the light is incident on the opening 45A and received by the light receiving element.
  • a light receiving chip (PDIC) 20 having a light receiving element (photodiode) and a peripheral circuit is provided on the upper surface of a substrate 10 made of an organic material, ceramic, lead frame or the like.
  • the light receiving chip 20 is connected to the patterns 11 and 12 on the substrate 10 by bonding wires 21 and 22.
  • a light emitting chip 30 composed of light emitting elements is further provided on the upper surface of the substrate 10.
  • one of an anode electrode and a cathode electrode of a light emitting diode (LED) is connected to the pattern 14 formed on the lower surface of the substrate 10 through a through hole 15 made of metal.
  • the other electrode of the light emitting chip 30 is connected to a pattern (not shown) on the substrate 10 by a bonding wire 31.
  • a space 60 is provided between the light receiving chip 20 and the light emitting chip 30, and an opaque resin 51A is provided on the light receiving chip 20 side, and an opaque resin 51B is provided on the light emitting chip 30 side.
  • the opaque resin 51B blocks light emitted from the light emitting chip 30 to the light receiving chip 20 side.
  • the height of the opaque resin 51A is substantially the same as the height of the opaque resin 51B.
  • the opaque resin 51 ⁇ / b> A is provided so that the light receiving chip 20 does not receive external light when external light is incident on the space 60.
  • a transparent resin 41A is provided at substantially the same height as the opaque resin 51A so as to cover the light receiving chip 20 and the bonding wires 21 and 22. Further, on the light emitting chip 30 side of the opaque resin 51B, a transparent resin 41B is provided at substantially the same height as the opaque resin 51B so as to cover the light emitting chip 30 and the bonding wires 31.
  • a heat radiating plate 45 is provided in contact with the top surfaces of the transparent resin 41A, the opaque resin 51A, the space 60, the opaque resin 51B, and the transparent resin 41B.
  • the heat radiating plate is made of a thin metal plate (for example, an aluminum plate or a copper plate), and has an opening 45B located on the light emitting portion of the light emitting chip 30 and an opening 45A located on the light receiving portion of the light receiving chip 20.
  • the patterns 11 and 12 on the substrate 10 are configured to be connectable to other through holes similar to the through hole 15 or the pattern 13 formed on the lower surface of the substrate 10 through a through via (not shown). ing.
  • FIG. 2A the light receiving chip 20 is die-mounted at a predetermined position on the upper surface of the circuit board 10 on which the pattern is formed.
  • the light emitting chip 30 is die mounted on the pattern connected to the through hole 15.
  • the plurality of electrodes of the light receiving chip 20 are bonded to the patterns 11 and 12 of the substrate 10 and other patterns by bonding wires 21 and 22 and a bonding wire (not shown), respectively.
  • the upper electrode of the light emitting chip 30 and a predetermined pattern of the substrate 10 are bonded by a bonding wire 31.
  • the light receiving chip 20 and the bonding wires 21 and 22, and the light emitting chip 30 and the bonding wire 31 are sealed with a transparent resin 41 so as to cover them.
  • a dicing process is performed between the light receiving chip 20 and the light emitting chip 30 to cut a part of the transparent resin 41 until it reaches the surface of the substrate 10. Thereby, the transparent resin 41 is separated into the transparent resins 41A and 41B.
  • an opaque resin 51 is filled between the transparent resins 41A and 41B.
  • the surfaces of the transparent resin 41A, the opaque resin 51, and the transparent resin 41B are set to the same height.
  • a dicing process is performed in which a part of the opaque resin 51 is cut until it reaches the surface of the substrate 10.
  • a blade having a narrower width than that at the time of dicing in FIG. 2C a space 60 for separating the opaque resin 51 into the opaque resins 51A and 51B is obtained as illustrated in FIG.
  • the heat radiating plate 45 having the opening 45B and the opening 45A is bonded to the upper surfaces of the transparent resin 41A, the opaque resin 51A, the space 60, the opaque resin 51B, and the transparent resin 41B, the light source integrated photosensor 1 of FIG. Complete.
  • the light source integrated optical sensor 1 includes a light receiving chip 20 provided in a predetermined region on the substrate 10, a light emitting chip 30 provided in a region different from the light receiving chip 20 on the substrate 10, and the light receiving chip 20.
  • a transparent resin 41A provided so as to cover the light receiving chip 20, a transparent resin 41B provided on the light emitting chip 30 so as to cover the light emitting chip 30, and a transparent resin 41A provided between the transparent resin 41A and the transparent resin 41B.
  • the opaque resins 51A and 51B, the transparent resins 41A and 41B, and the heat radiating plates 45 that are in contact with the opaque resins 51A and 51B, respectively, are provided.
  • the heat conductivity of the heat radiating plate 45 is higher than the heat conductivity of the resin, and is about several hundred times to 1000 times. For this reason, when the heat from the light emitting chip 30 is transmitted to the heat radiating plate 45, the heat is radiated widely from the surface of the heat radiating plate 45 to the outside of the sensor. As a result, it is possible to avoid a temperature increase that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed or discolored.
  • the heat radiating plate 45 has openings 45B and 45A at positions corresponding to the light emitting chip 30 and the light receiving chip 20, and includes transparent resins 41A and 41B and opaque resin 51A. , 51B is in contact with the surface formed from above. Thereby, the heat in the sensor can be efficiently transmitted to the heat radiating plate 45 and radiated from the surface of the heat radiating plate 45 to the outside of the sensor. Moreover, since the openings 45B and 45A are provided, the influence of unnecessary light can be suppressed.
  • FIG. 3 is a cross-sectional view of a light source integrated optical sensor 1B according to the first modification.
  • the light source integrated photosensor 1B according to FIG. 3 differs from the light source integrated photosensor 1 described above in that an opaque resin 51 is provided only on the light receiving chip 20 side of the space 60.
  • the light source integrated optical sensor 1B of Modification 1 performs a dicing process in which a part of the opaque resin 51 is cut until reaching the surface of the substrate 10 on the transparent resin 41B side of the opaque resin 51 illustrated in FIG. Apply.
  • the opaque resin 51 remains only on the light receiving chip 20 side of the space 60, and no opaque resin remains on the light emitting chip 30 side of the space 60.
  • the light receiving chip 20 can block the light from being received.
  • the heat radiation performance is improved by providing the heat radiating plate 45, it is possible to avoid a temperature rise that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed and discolored.
  • the space 60 heat conduction from the light emitting chip 30 side to the light receiving chip 20 side through the opaque resin 51 can be reduced.
  • FIG. 4 is a cross-sectional view of a light source integrated photosensor 1C according to the second modification. 4 differs from the light source integrated photosensor 1 described above in that a light shielding film 52 is formed on the side surface of the transparent resin 41A on the space 60 side.
  • the light source integrated optical sensor 1C according to Modification 2 forms a light-shielding film 52 by sputtering a predetermined metal material on the right side (space side) of the transparent resin 41A illustrated in FIG. Thereby, it is possible to shield the external light incident on the space 60 from being received by the light receiving chip 20.
  • FIG. 5 is a cross-sectional view of a light source integrated photosensor 1D according to Modification 3.
  • the light source integrated photosensor 1D according to FIG. 5 is provided with a material having a high thermal conductivity, for example, a metal plate 70 in the space 60 as compared with the light source integrated photosensor 1 of FIG. The difference is that the through hole 16 is formed in accordance with the position immediately below.
  • the light source integrated photosensor 1D of Modification 3 is obtained by performing the same processing as the light source integrated photosensor 1 on the substrate 10B in which the through hole 16 is additionally formed on the substrate 10 and then directly above the through hole 16. Is provided with a metal plate 70 which is a heat conductive material. The heat transmitted from the light emitting chip 30 side to the metal plate 70 can also be radiated from the lower surface side pattern 17 of the substrate 10B through the through hole 16.
  • a gap may be filled between the metal plate 70 and the opaque resin 51B by applying a filler so that the heat on the light emitting chip 30 side can be easily absorbed into the metal plate 70. Since the space 60 is provided immediately above the through hole 16, the metal plate 70 provided in the space 60 is positioned on the through hole 16, so that the heat transferred to the metal plate 70 is transmitted through the through hole 16. Thus, it is possible to efficiently escape to the lower side of the substrate 10.
  • the heat transmitted to the metal plate 70 is also conducted to the heat radiating plate 45.
  • the heat radiation performance is improved by providing the heat radiating plate 45, it is possible to avoid a temperature rise that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed and discolored.
  • the heat conductivity of the metal plate 70 is higher than the heat conductivity of the resin, and is approximately several hundred times to 1000 times. Therefore, the heat transmitted to the metal plate 70 is immediately transmitted to the lower side of the substrate 10 through the heat radiating plate 45 and the through hole 16.
  • FIG. 6 is a cross-sectional view of a light source integrated photosensor 1E according to Modification 4.
  • the light source integrated photosensor 1E according to FIG. 6 is provided with a material having a high thermal conductivity, for example, a metal plate 70 in the space 60 as compared with the light source integrated photosensor 1B of FIG. The difference is that the through hole 16 is formed in accordance with the position immediately below.
  • the substrate 10B additionally provided with the through hole 16 is subjected to the same processing as that of the light source integrated photosensor 1B, and the heat conductivity is directly above the through hole 16.
  • a metal plate 70 as a material is provided. The heat transmitted from the light emitting chip 30 side to the metal plate 70 can also be radiated from the lower surface side pattern 17 of the substrate 10B through the through hole 16.
  • a gap may be filled between the metal plate 70 and the transparent resin 41B by applying a filler so that the heat on the light emitting chip 30 side can be easily absorbed into the metal plate 70. Since the space 60 is provided immediately above the through hole 16, the metal plate 70 provided in the space 60 is positioned on the through hole 16, so that the heat transferred to the metal plate 70 is transmitted through the through hole 16. Thus, it is possible to efficiently escape to the lower side of the substrate 10.
  • the heat transmitted to the metal plate 70 is also conducted to the heat radiating plate 45.
  • the heat radiation performance is improved by providing the heat radiating plate 45, it is possible to avoid a temperature rise that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed and discolored.
  • the heat conductivity of the metal plate 70 is higher than the heat conductivity of the resin, so that the heat transmitted to the metal plate 70 immediately goes to the lower side of the substrate 10 via the heat radiating plate 45 and the through hole 16. It is transmitted.
  • Modification 5 When the metal plate 70 is provided as in the third modification or the fourth modification, the opaque resins 51A and 51B or the opaque resin 51 may be omitted. In this case, the direct light emitted from the light emitting chip 30 to the light receiving chip 20 side is shielded by the metal plate 70.
  • FIG. 7 is a diagram illustrating the light source integrated photosensor 2 according to the second embodiment of the invention.
  • FIG. 7A is a top view of the light source integrated photosensor 2
  • FIG. 7B is a cross-sectional view of the light source integrated photosensor 2 taken along line EE ′ in FIG. 7A.
  • the difference is that the opaque resin 51C and the opaque resin 51D are provided around the sensor. A method for manufacturing the optical sensor 2 will be described.
  • FIG. 2B In the manufacturing procedure of the light source integrated photosensor 2, until the light receiving chip 20 and the bonding wires 21 and 22 and the light emitting chip 30 and the bonding wire 31 are respectively covered with the transparent resin 41 (FIG. 2B). Since the procedure is the same as the procedure described in the first embodiment, the description thereof is omitted.
  • a part of the transparent resin 41 reaches the surface of the substrate 10 from the sealing state with the transparent resin 41 between the light receiving chip 20 and the light emitting chip 30 and the outer peripheral portion on the substrate 10. Dicing process is performed to cut up to. Thereby, as illustrated in FIG. 8A and FIG. 8B, the transparent resin 41 is separated into the transparent resins 41A and 41B.
  • FIG. 8A is a top view at this point
  • FIG. 8B is a cross-sectional view at this point.
  • opaque resin 51 is filled in the dicing groove.
  • a heat conductive material having high heat conductivity is used for the opaque resin 51. Note that the surfaces of the transparent resin 41A, the opaque resin 51, and the transparent resin 41B have the same height.
  • a dicing process is performed in which a part of the opaque resin 51 is cut until it reaches the surface of the substrate 10.
  • a blade having a narrower width than the distance between the transparent resin 41A and the transparent resin 41B By using a blade having a narrower width than the distance between the transparent resin 41A and the transparent resin 41B, a space 60 for separating the opaque resin 51 into the opaque resins 51A and 51B is obtained as illustrated in FIG. 9B.
  • the heat radiating plate 45 having the openings 45B and 45A is bonded to the upper surfaces of the opaque resin 51C, the transparent resin 41A, the opaque resin 51A, the space 60, the opaque resin 51B, the transparent resin 41B, and the opaque resin 51D, FIG.
  • the light source integrated photosensor 2 is completed.
  • the light source integrated photosensor 2 When the light source integrated photosensor 2 is actually manufactured, a plurality of sensors illustrated in FIG. 9B are formed on the substrate 10C, and the opaque resin 51 between the sensors is cut by dicing. Divide into pieces. In FIG. 10, the black thick line L shows the cutting location for individualization.
  • the light source integrated optical sensor 2 includes a light receiving chip 20 provided in a predetermined region on the substrate 10C, a light emitting chip 30 provided in a region different from the light receiving chip 20 on the substrate 10C, and the light receiving chip 20.
  • a transparent resin 41A provided so as to cover the light receiving chip 20, a transparent resin 41B provided on the light emitting chip 30 so as to cover the light emitting chip 30, and a transparent resin 41A provided between the transparent resin 41A and the transparent resin 41B.
  • the opaque resins 51A and 51B, the transparent resins 41A and 41B, and the opaque resins 51 are provided as heat dissipation members in contact with the opaque resins 51A and 51B, respectively. Since heat generated in the light emitting chip 30 can be efficiently radiated, deterioration of characteristics due to heat from the light emitting portion can be suppressed. Specifically, when heat from the light emitting chip 30 is transmitted to the opaque resin 51, the heat is released from the opaque resin 51 to the outside of the sensor. As a result, it is possible to avoid a temperature increase that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed or discolored.
  • the opaque resin 51 (51C, 51D) that surrounds the substrate 10C and has thermal conductivity, and the opaque resin between the transparent resin 41A and the transparent resin 41B.
  • a heat radiating member was constituted by 51A and 51B.
  • the thermal conductivity of the opaque resin 51 having thermal conductivity is several tens to about 100 times larger than the thermal conductivity of a normal resin. For this reason, when the heat from the light emitting chip 30 is transmitted to the opaque resin 51, the heat is widely dissipated from the opaque resin 51 to the outside of the surrounding sensors.
  • the heat dissipating member further has openings 45B and 45A at positions corresponding to the light emitting chip 30 and the light receiving chip 20, and the transparent resins 41A and 41B and the opaque resin 51A. , 51B, 51C, 51D are included so as to include a heat radiating plate 45 in contact with the surface from above. For this reason, the heat from the light emitting chip 30 is also transmitted to the heat radiating plate 45, and is widely radiated from the surface of the heat radiating plate 45 to the outside of the sensor.
  • the heat radiating plate 45 is omitted from the light source integrated optical sensor 2, and the heat radiating member is formed by the opaque resin 51 (51C, 51D) surrounding the substrate 10C and the opaque resin 51A, 51B between the transparent resin 41A and the transparent resin 41B. You may comprise (state of FIG.9 (b)).
  • the opaque resin 51 is provided around the substrate 10C, the surface area where the opaque resin 51 is in contact with air is increased.
  • the heat dissipation amount from the opaque resin 51 is larger than the heat generation amount in the light emitting chip 30, the surface of the transparent resin 41A covering the light receiving chip 20 is deformed and discolored without providing the heat dissipation plate 45. Such temperature rise can be avoided.

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Device Packages (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

A light source-integrated optical sensor comprising: a light reception unit provided in a prescribed area upon a substrate; a light emission unit provided in a different area from the light reception unit on the substrate; a first light transmitting member provided upon the light reception unit so as to cover the light reception unit; a second light transmitting member provided upon the light emission unit so as to cover the light emission unit; a light shielding member provided between the first light transmitting member and the second light transmitting member; and a heat dissipating member in contact with the first light transmitting member, the second light transmitting member, and the light shielding member.

Description

光源一体型光センサLight source integrated light sensor
　本発明は、光源一体型光センサに関する。 The present invention relates to a light source integrated optical sensor.
　基板上に設けた発光チップおよび受光チップを透明樹脂で覆い、発光チップと受光チップとの間の透明樹脂に溝を設け、この溝に遮光樹脂を充填した光源一体型光センサが知られている（特許文献１参照）。 A light source integrated optical sensor is known in which a light emitting chip and a light receiving chip provided on a substrate are covered with a transparent resin, a groove is formed in the transparent resin between the light emitting chip and the light receiving chip, and the groove is filled with a light shielding resin. (See Patent Document 1).
日本国特開２００５－３４０７２７号公報Japanese Unexamined Patent Publication No. 2005-340727
　従来技術では、発光チップで発生した熱の影響により、受光チップ上の透明樹脂の表面の平坦形状が損なわれ変形したり、変質や変色したりするおそれがあった。受光チップ上における透明樹脂の表面の変形や変色は、受光感度の低下など受光特性の劣化につながる。 In the prior art, the flat shape of the surface of the transparent resin on the light-receiving chip is damaged due to the heat generated in the light-emitting chip, and there is a risk of deformation or alteration or discoloration. The deformation or discoloration of the surface of the transparent resin on the light receiving chip leads to deterioration of light receiving characteristics such as a decrease in light receiving sensitivity.
　本発明の第１の態様によると、光源一体型光センサは、基板上の所定領域に設けられた受光部と、基板上の受光部と異なる領域に設けられた発光部と、受光部上に当該受光部を覆うように設けられた第１透光部材と、発光部上に当該発光部を覆うように設けられた第２透光部材と、第１透光部材と第２透光部材との間に設けられた遮光部材と、第１透光部材、第２透光部材および遮光部材とそれぞれ接する放熱部材と、を備える。
　本発明の第２の態様によると、第１の態様による光源一体型光センサにおいて、放熱部材は、発光部および受光部に対応する位置に開口を有し、第１透光部材、第２透光部材および遮光部材が形成する面に上から接する平面部材で構成することが好ましい。
　本発明の第３の態様によると、第１または第２の態様による光源一体型光センサにおいて、遮光部材に代えて、または遮光部材に沿って基板と放熱部材とにそれぞれ接する熱伝導部材をさらに備えてもよい。
　本発明の第４の態様によると、第３の態様による光源一体型光センサにおいて、熱伝導部材は、基板に設けられているスルーホールに接するのが好ましい。
　本発明の第５の態様によると、第１の態様による光源一体型光センサにおいて、放熱部材は、基板の周囲を囲み、熱伝導性を有する第２の遮光部材によって構成するのが好ましい。
　本発明の第６の態様によると、第５の態様による光源一体型光センサにおいて、放熱部材はさらに、発光部および受光部に対応する位置に開口を有し、第１透光部材、第２透光部材および第２の遮光部材が形成する面に上から接する平面部材を含めてもよい。
　本発明の第７の態様によると、第６の態様による光源一体型光センサにおいて、基板と平面部材とにそれぞれ接する熱伝導部材をさらに備えてもよい。
　本発明の第８の態様によると、第７の態様による光源一体型光センサにおいて、熱伝導部材は、基板に設けられているスルーホールに接するのが好ましい。 According to the first aspect of the present invention, the light source integrated optical sensor includes a light receiving unit provided in a predetermined region on the substrate, a light emitting unit provided in a region different from the light receiving unit on the substrate, and the light receiving unit. A first light transmissive member provided to cover the light receiving portion; a second light transmissive member provided on the light emitting portion to cover the light emitting portion; a first light transmissive member and a second light transmissive member; And a heat-dissipating member in contact with each of the first light-transmitting member, the second light-transmitting member, and the light-shielding member.
According to the second aspect of the present invention, in the light source integrated optical sensor according to the first aspect, the heat radiating member has an opening at a position corresponding to the light emitting part and the light receiving part, and the first light transmissive member and the second light transmissive member are provided. It is preferable to use a planar member that is in contact with the surface formed by the optical member and the light shielding member from above.
According to the third aspect of the present invention, in the light source integrated optical sensor according to the first or second aspect, the heat conducting member that is in contact with the substrate and the heat radiating member in place of the light shielding member or along the light shielding member is further provided. You may prepare.
According to the fourth aspect of the present invention, in the light source integrated optical sensor according to the third aspect, it is preferable that the heat conducting member is in contact with a through hole provided in the substrate.
According to the fifth aspect of the present invention, in the light source integrated optical sensor according to the first aspect, it is preferable that the heat radiating member is constituted by a second light-shielding member that surrounds the substrate and has thermal conductivity.
According to the sixth aspect of the present invention, in the light source integrated optical sensor according to the fifth aspect, the heat dissipating member further has an opening at a position corresponding to the light emitting part and the light receiving part, and the first light transmitting member and the second light transmitting member are provided. You may include the planar member which touches the surface which a translucent member and a 2nd light-shielding member form from the top.
According to the seventh aspect of the present invention, the light source integrated optical sensor according to the sixth aspect may further include a heat conducting member in contact with the substrate and the planar member.
According to the eighth aspect of the present invention, in the light source integrated optical sensor according to the seventh aspect, the heat conducting member is preferably in contact with a through hole provided in the substrate.
　本発明による光源一体型光センサでは、発光部からの熱による特性劣化を抑えられる。 In the light source integrated photosensor according to the present invention, characteristic deterioration due to heat from the light emitting portion can be suppressed.
第一の実施の形態による光源一体型光センサの図であり、図１(a)は上面図、図１(b)は断面図である。It is a figure of the light source integrated optical sensor by 1st embodiment, Fig.1 (a) is a top view, FIG.1 (b) is sectional drawing. 図２(a)、 図２(b)、 図２(c)、 図２(d)は、光源一体型光センサの製造方法を説明する図である。2 (a), FIG. 2 (b), FIG. 2 (c), and FIG. 2 (d) are diagrams for explaining a method of manufacturing a light source integrated photosensor. 図３は、変形例１による光源一体型光センサの断面図である。FIG. 3 is a cross-sectional view of the light source integrated photosensor according to the first modification. 図４は、変形例２による光源一体型光センサの断面図である。FIG. 4 is a cross-sectional view of a light source integrated photosensor according to a second modification. 図５は、変形例３による光源一体型光センサの断面図である。FIG. 5 is a cross-sectional view of a light source integrated photosensor according to Modification 3. 図６は、変形例４による光源一体型光センサの断面図である。FIG. 6 is a cross-sectional view of a light source integrated photosensor according to a fourth modification. 第二の実施の形態による光源一体型光センサの図であり、図７(a)は上面図、図７(b)は断面図である。7A and 7B are diagrams of a light source integrated photosensor according to a second embodiment, in which FIG. 7A is a top view and FIG. 7B is a cross-sectional view. 図８(a)はダイシング加工後の上面図であり、図８(b)は断面図である。FIG. 8A is a top view after dicing, and FIG. 8B is a cross-sectional view. 図９(a)は溝に不透明樹脂を充填した図であり、図９(b)は空間によって不透明樹脂を分離した図である。FIG. 9A is a diagram in which the groove is filled with an opaque resin, and FIG. 9B is a diagram in which the opaque resin is separated by a space. 図１０は、センサの切断および個片化を説明する図である。FIG. 10 is a diagram for explaining the cutting and singulation of the sensor.
　以下、図面を参照して本発明を実施するための形態について説明する。
＜第一の実施形態＞
　本実施形態は、発光チップで発生した熱を効率よく放熱させることで、受光チップ上の透明樹脂に熱の影響が及ばないようにする。図１は、本発明の第一の実施形態による光源一体型光センサ１を例示する図である。図１(a)は光源一体型光センサ１の上面図、図２(b)は図１(a)における光源一体型光センサ１のＥ－Ｅ’断面図である。光源一体型光センサ１は、発光素子および受光素子を基板１０上に一体構成したものであり、例えば、発光素子が発した光を開口４５Ｂから射出し、外部対象物で反射された反射光が開口４５Ａから入射して受光素子で受光されるか否かに基づいて、外部対象物の存否を判定する用途などに用いられる。 Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.
<First embodiment>
In this embodiment, the heat generated in the light emitting chip is efficiently radiated so that the transparent resin on the light receiving chip is not affected by the heat. FIG. 1 is a diagram illustrating a light source integrated photosensor 1 according to a first embodiment of the invention. FIG. 1A is a top view of the light source integrated photosensor 1, and FIG. 2B is a cross-sectional view of the light source integrated photosensor 1 taken along line EE ′ in FIG. The light source integrated optical sensor 1 is configured by integrally forming a light emitting element and a light receiving element on a substrate 10. For example, light emitted from the light emitting element is emitted from an opening 45 </ b> B, and reflected light reflected by an external object is reflected. It is used for the purpose of determining the presence or absence of an external object based on whether or not the light is incident on the opening 45A and received by the light receiving element.
　図１(b)において、有機材料、セラミック、リードフレームなどで構成される基板１０の上面に、受光素子（フォトダイオード）および周辺回路を有する受光チップ（PDIC）２０が設けられている。受光チップ２０は、ボンディングワイヤ２１、２２によって基板１０上のパターン１１、１２と接続されている。 In FIG. 1B, a light receiving chip (PDIC) 20 having a light receiving element (photodiode) and a peripheral circuit is provided on the upper surface of a substrate 10 made of an organic material, ceramic, lead frame or the like. The light receiving chip 20 is connected to the patterns 11 and 12 on the substrate 10 by bonding wires 21 and 22.
　基板１０の上面にはさらに、発光素子で構成される発光チップ３０が設けられている。発光チップ３０は、例えば発光ダイオード（LED）のアノード電極およびカソード電極のうち一方が、金属で構成されたスルーホール１５を介して、基板１０の下面に形成されているパターン１４と接続される。発光チップ３０の他方の電極は、ボンディングワイヤ３１によって基板１０上の図示しないパターンと接続されている。 A light emitting chip 30 composed of light emitting elements is further provided on the upper surface of the substrate 10. For example, one of an anode electrode and a cathode electrode of a light emitting diode (LED) is connected to the pattern 14 formed on the lower surface of the substrate 10 through a through hole 15 made of metal. The other electrode of the light emitting chip 30 is connected to a pattern (not shown) on the substrate 10 by a bonding wire 31.
　上記受光チップ２０および発光チップ３０の間には空間６０が設けられ、空間６０を挟んで受光チップ２０側に不透明樹脂５１Ａが、発光チップ３０側に不透明樹脂５１Ｂが、それぞれ設けられている。不透明樹脂５１Ｂは、発光チップ３０から受光チップ２０側へ射出される光を遮蔽する。不透明樹脂５１Ａの高さは不透明樹脂５１Ｂの高さと略同じである。不透明樹脂５１Ａは、空間６０へ外光が入射された場合に受光チップ２０が外光を受光しないように設けられる。 A space 60 is provided between the light receiving chip 20 and the light emitting chip 30, and an opaque resin 51A is provided on the light receiving chip 20 side, and an opaque resin 51B is provided on the light emitting chip 30 side. The opaque resin 51B blocks light emitted from the light emitting chip 30 to the light receiving chip 20 side. The height of the opaque resin 51A is substantially the same as the height of the opaque resin 51B. The opaque resin 51 </ b> A is provided so that the light receiving chip 20 does not receive external light when external light is incident on the space 60.
　不透明樹脂５１Ａの受光チップ２０側には、受光チップ２０およびボンディングワイヤ２１、２２を覆うように透明樹脂４１Ａが、不透明樹脂５１Ａと略同じ高さで設けられる。また、不透明樹脂５１Ｂの発光チップ３０側には、発光チップ３０およびボンディングワイヤ３１を覆うように透明樹脂４１Ｂが、不透明樹脂５１Ｂと略同じ高さで設けられる。 On the light receiving chip 20 side of the opaque resin 51A, a transparent resin 41A is provided at substantially the same height as the opaque resin 51A so as to cover the light receiving chip 20 and the bonding wires 21 and 22. Further, on the light emitting chip 30 side of the opaque resin 51B, a transparent resin 41B is provided at substantially the same height as the opaque resin 51B so as to cover the light emitting chip 30 and the bonding wires 31.
　透明樹脂４１Ａ、不透明樹脂５１Ａ、空間６０、不透明樹脂５１Ｂ、および透明樹脂４１Ｂの上面に接して、放熱板４５が設けられる。放熱板は、薄い金属板（例えばアルミ板または銅板）で構成されており、発光チップ３０の発光部上に位置する開口４５Ｂと、受光チップ２０の受光部上に位置する開口４５Ａとを有する。 A heat radiating plate 45 is provided in contact with the top surfaces of the transparent resin 41A, the opaque resin 51A, the space 60, the opaque resin 51B, and the transparent resin 41B. The heat radiating plate is made of a thin metal plate (for example, an aluminum plate or a copper plate), and has an opening 45B located on the light emitting portion of the light emitting chip 30 and an opening 45A located on the light receiving portion of the light receiving chip 20.
　なお、基板１０上のパターン１１、１２は、スルーホール１５と同様の他のスルーホール、または、図示しない貫通ビアを介して基板１０の下面に形成されているパターン１３などと接続可能に構成されている。 The patterns 11 and 12 on the substrate 10 are configured to be connectable to other through holes similar to the through hole 15 or the pattern 13 formed on the lower surface of the substrate 10 through a through via (not shown). ing.
　上述した光源一体型光センサ１の製造方法について、図２(a)－図２(d)を参照して説明する。図２(a)において、パターンが形成されている回路基板１０の上面の所定位置に受光チップ２０をダイマウントする。発光チップ３０は、スルーホール１５と接続されているパターン上にダイマウントする。続いて、受光チップ２０の複数の電極と、基板１０のパターン１１、１２および他のパターンとの間をそれぞれボンディングワイヤ２１、２２、および不図示のボンディングワイヤでボンディング接続する。また、発光チップ３０の上側の電極と、基板１０の所定パターンとの間をボンディングワイヤ３１によってボンディング接続する。 A method of manufacturing the above-described light source integrated photosensor 1 will be described with reference to FIGS. 2 (a) to 2 (d). In FIG. 2A, the light receiving chip 20 is die-mounted at a predetermined position on the upper surface of the circuit board 10 on which the pattern is formed. The light emitting chip 30 is die mounted on the pattern connected to the through hole 15. Subsequently, the plurality of electrodes of the light receiving chip 20 are bonded to the patterns 11 and 12 of the substrate 10 and other patterns by bonding wires 21 and 22 and a bonding wire (not shown), respectively. Further, the upper electrode of the light emitting chip 30 and a predetermined pattern of the substrate 10 are bonded by a bonding wire 31.
　図２(b)において、受光チップ２０およびボンディングワイヤ２１、２２、および発光チップ３０およびボンディングワイヤ３１をそれぞれ覆うように透明樹脂４１で封止する。図２(c)において、受光チップ２０および発光チップ３０間において、透明樹脂４１の一部を基板１０の表面に到達するまで切削するダイシング加工を施す。これにより、透明樹脂４１が透明樹脂４１Ａと４１Ｂに分離される。 2B, the light receiving chip 20 and the bonding wires 21 and 22, and the light emitting chip 30 and the bonding wire 31 are sealed with a transparent resin 41 so as to cover them. In FIG. 2C, a dicing process is performed between the light receiving chip 20 and the light emitting chip 30 to cut a part of the transparent resin 41 until it reaches the surface of the substrate 10. Thereby, the transparent resin 41 is separated into the transparent resins 41A and 41B.
　図２(d)において、透明樹脂４１Ａと４１Ｂとの間に不透明樹脂５１を充填する。透明樹脂４１Ａ、不透明樹脂５１、および透明樹脂４１Ｂの表面を同じ高さとする。 2 (d), an opaque resin 51 is filled between the transparent resins 41A and 41B. The surfaces of the transparent resin 41A, the opaque resin 51, and the transparent resin 41B are set to the same height.
　次に、不透明樹脂５１の一部を基板１０の表面に到達するまで切削するダイシング加工を施す。図２(c)におけるダイシング加工時より幅の狭いブレードを用いることにより、図１に例示したように、不透明樹脂５１を不透明樹脂５１Ａと５１Ｂとに分離する空間６０が得られる。最後に、開口４５Ｂおよび開口４５Ａを有する放熱板４５を、透明樹脂４１Ａ、不透明樹脂５１Ａ、空間６０、不透明樹脂５１Ｂ、および透明樹脂４１Ｂの上面に接着すると、図１の光源一体型光センサ１が完成する。 Next, a dicing process is performed in which a part of the opaque resin 51 is cut until it reaches the surface of the substrate 10. By using a blade having a narrower width than that at the time of dicing in FIG. 2C, a space 60 for separating the opaque resin 51 into the opaque resins 51A and 51B is obtained as illustrated in FIG. Finally, when the heat radiating plate 45 having the opening 45B and the opening 45A is bonded to the upper surfaces of the transparent resin 41A, the opaque resin 51A, the space 60, the opaque resin 51B, and the transparent resin 41B, the light source integrated photosensor 1 of FIG. Complete.
　以上説明した第一の実施形態によれば、次の作用効果が得られる。
（１）光源一体型光センサ１は、基板１０上の所定領域に設けられた受光チップ２０と、基板１０上の受光チップ２０と異なる領域に設けられた発光チップ３０と、受光チップ２０上に当該受光チップ２０を覆うように設けられた透明樹脂４１Ａと、発光チップ３０上に当該発光チップ３０を覆うように設けられた透明樹脂４１Ｂと、透明樹脂４１Ａと透明樹脂４１Ｂとの間に設けられた不透明樹脂５１Ａ、５１Ｂと、透明樹脂４１Ａ、４１Ｂ、および不透明樹脂５１Ａ、５１Ｂにそれぞれ接する放熱板４５と、を備えるようにした。発光チップ３０で発生した熱を効率よく放熱できるため、発光チップ３０からの熱による特性劣化を抑えられる。一般に、放熱板４５の熱伝導率は、樹脂の熱伝導率より高く、およそ数百倍から１０００倍である。このため、発光チップ３０からの熱が放熱板４５へ伝わると、該放熱板４５の表面から広くセンサ外へ放熱される。この結果、受光チップ２０を覆う透明樹脂４１Ａの表面を変形、変色に至らしめるような温度上昇を避けることができる。 According to the first embodiment described above, the following operational effects can be obtained.
(1) The light source integrated optical sensor 1 includes a light receiving chip 20 provided in a predetermined region on the substrate 10, a light emitting chip 30 provided in a region different from the light receiving chip 20 on the substrate 10, and the light receiving chip 20. A transparent resin 41A provided so as to cover the light receiving chip 20, a transparent resin 41B provided on the light emitting chip 30 so as to cover the light emitting chip 30, and a transparent resin 41A provided between the transparent resin 41A and the transparent resin 41B. The opaque resins 51A and 51B, the transparent resins 41A and 41B, and the heat radiating plates 45 that are in contact with the opaque resins 51A and 51B, respectively, are provided. Since heat generated in the light emitting chip 30 can be efficiently dissipated, deterioration of characteristics due to heat from the light emitting chip 30 can be suppressed. In general, the heat conductivity of the heat radiating plate 45 is higher than the heat conductivity of the resin, and is about several hundred times to 1000 times. For this reason, when the heat from the light emitting chip 30 is transmitted to the heat radiating plate 45, the heat is radiated widely from the surface of the heat radiating plate 45 to the outside of the sensor. As a result, it is possible to avoid a temperature increase that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed or discolored.
（２）上記（１）の光源一体型光センサ１において、放熱板４５は、発光チップ３０および受光チップ２０に対応する位置に開口４５Ｂ、４５Ａを有し、透明樹脂４１Ａ、４１Ｂおよび不透明樹脂５１Ａ、５１Ｂが形成する面に上から接するようにした。これにより、センサ内の熱を効率よく放熱板４５へ伝え、放熱板４５の表面からセンサ外へ放熱できる。また、開口４５Ｂ、４５Ａを設けたので、不要光の影響も抑えることができる。 (2) In the light source integrated optical sensor 1 of (1) above, the heat radiating plate 45 has openings 45B and 45A at positions corresponding to the light emitting chip 30 and the light receiving chip 20, and includes transparent resins 41A and 41B and opaque resin 51A. , 51B is in contact with the surface formed from above. Thereby, the heat in the sensor can be efficiently transmitted to the heat radiating plate 45 and radiated from the surface of the heat radiating plate 45 to the outside of the sensor. Moreover, since the openings 45B and 45A are provided, the influence of unnecessary light can be suppressed.
（変形例１）
　図３は、変形例１による光源一体型光センサ１Ｂの断面図である。図３による光源一体型光センサ１Ｂは、上述した光源一体型光センサ１と比べて、空間６０の受光チップ２０側にのみ、不透明樹脂５１が設けられている点が異なる。 (Modification 1)
FIG. 3 is a cross-sectional view of a light source integrated optical sensor 1B according to the first modification. The light source integrated photosensor 1B according to FIG. 3 differs from the light source integrated photosensor 1 described above in that an opaque resin 51 is provided only on the light receiving chip 20 side of the space 60.
　変形例１の光源一体型光センサ１Ｂは、図２(d)に例示した不透明樹脂５１の透明樹脂４１Ｂ側において、不透明樹脂５１の一部を基板１０の表面に到達するまで切削するダイシング加工を施す。この加工により、空間６０の受光チップ２０側にのみ不透明樹脂５１が残り、空間６０の発光チップ３０側には不透明樹脂が残らない。不透明樹脂５１を設けることで、空間６０へ外光が入射されたとしても、受光チップ２０で受光しないように遮光できる。 The light source integrated optical sensor 1B of Modification 1 performs a dicing process in which a part of the opaque resin 51 is cut until reaching the surface of the substrate 10 on the transparent resin 41B side of the opaque resin 51 illustrated in FIG. Apply. By this processing, the opaque resin 51 remains only on the light receiving chip 20 side of the space 60, and no opaque resin remains on the light emitting chip 30 side of the space 60. By providing the opaque resin 51, even if external light is incident on the space 60, the light receiving chip 20 can block the light from being received.
　変形例１の場合も、放熱板４５を設けて放熱性を高めたので、受光チップ２０を覆う透明樹脂４１Ａの表面を変形、変色に至らしめるような温度上昇を避けることができる。また、空間６０を設けたことによって、不透明樹脂５１を介して発光チップ３０側からの熱が受光チップ２０側へ熱伝導することを緩和できる。 Also in the case of the first modification, since the heat radiation performance is improved by providing the heat radiating plate 45, it is possible to avoid a temperature rise that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed and discolored. In addition, by providing the space 60, heat conduction from the light emitting chip 30 side to the light receiving chip 20 side through the opaque resin 51 can be reduced.
（変形例２）
　図４は、変形例２による光源一体型光センサ１Ｃの断面図である。図４による光源一体型光センサ１Ｃは、上述した光源一体型光センサ１と比べて、透明樹脂４１Ａの空間６０側の側面に、遮光膜５２が形成されている点が異なる。 (Modification 2)
FIG. 4 is a cross-sectional view of a light source integrated photosensor 1C according to the second modification. 4 differs from the light source integrated photosensor 1 described above in that a light shielding film 52 is formed on the side surface of the transparent resin 41A on the space 60 side.
　変形例２の光源一体型光センサ１Ｃは、図２(c)に例示した透明樹脂４１Ａの右側面（空間側）に対し、所定の金属材料をスパッタ蒸着して遮光膜５２を形成する。これにより、空間６０へ入射された外光が受光チップ２０で受光されないように遮光できる。 The light source integrated optical sensor 1C according to Modification 2 forms a light-shielding film 52 by sputtering a predetermined metal material on the right side (space side) of the transparent resin 41A illustrated in FIG. Thereby, it is possible to shield the external light incident on the space 60 from being received by the light receiving chip 20.
　変形例２の場合も、放熱板４５を設けて放熱性を高めたので、受光チップ２０を覆う透明樹脂４１Ａの表面を変形、変色に至らしめるような温度上昇を避けることができる。また、空間６０を設けたことによって、不透明樹脂５１を介して発光チップ３０側からの熱が受光チップ２０側へ熱伝導することを緩和できる。 Also in the case of Modification 2, since the heat radiating plate 45 is provided to improve heat dissipation, it is possible to avoid a temperature rise that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed and discolored. In addition, by providing the space 60, heat conduction from the light emitting chip 30 side to the light receiving chip 20 side through the opaque resin 51 can be reduced.
（変形例３）
　図５は、変形例３による光源一体型光センサ１Ｄの断面図である。図５による光源一体型光センサ１Ｄは、図１の光源一体型光センサ１と比べて、空間６０内に熱伝導率が高い材料、例えば金属板７０を設けている点、および金属板７０の直下となる位置に合わせてスルーホール１６が形成される点が異なる。 (Modification 3)
FIG. 5 is a cross-sectional view of a light source integrated photosensor 1D according to Modification 3. The light source integrated photosensor 1D according to FIG. 5 is provided with a material having a high thermal conductivity, for example, a metal plate 70 in the space 60 as compared with the light source integrated photosensor 1 of FIG. The difference is that the through hole 16 is formed in accordance with the position immediately below.
　変形例３の光源一体型光センサ１Ｄは、基板１０にスルーホール１６が追加形成された基板１０Ｂに対して光源一体型光センサ１と同様の処理を施した上で、スルーホール１６の真上に導熱性材料である金属板７０を設ける。発光チップ３０側から金属板７０へ伝わった熱は、スルーホール１６を介して基板１０Ｂの下面側パターン１７からも放熱可能である。 The light source integrated photosensor 1D of Modification 3 is obtained by performing the same processing as the light source integrated photosensor 1 on the substrate 10B in which the through hole 16 is additionally formed on the substrate 10 and then directly above the through hole 16. Is provided with a metal plate 70 which is a heat conductive material. The heat transmitted from the light emitting chip 30 side to the metal plate 70 can also be radiated from the lower surface side pattern 17 of the substrate 10B through the through hole 16.
　なお、金属板７０と不透明樹脂５１Ｂとの間は、発光チップ３０側の熱を金属板７０へ吸収しやすくするために充填剤を塗布して隙間を埋めてもよい。空間６０をスルーホール１６の真上に設けておいたことにより、空間６０に設けた金属板７０がスルーホール１６上に位置することから、金属板７０に伝わった熱は、スルーホール１６を介して基板１０下側へ効率よく逃がせる。 Note that a gap may be filled between the metal plate 70 and the opaque resin 51B by applying a filler so that the heat on the light emitting chip 30 side can be easily absorbed into the metal plate 70. Since the space 60 is provided immediately above the through hole 16, the metal plate 70 provided in the space 60 is positioned on the through hole 16, so that the heat transferred to the metal plate 70 is transmitted through the through hole 16. Thus, it is possible to efficiently escape to the lower side of the substrate 10.
　一方、金属板７０へ伝わった熱は放熱板４５へも伝導する。変形例３の場合も、放熱板４５を設けて放熱性を高めているので、受光チップ２０を覆う透明樹脂４１Ａの表面を変形、変色に至らしめるような温度上昇を避けることができる。なお、金属板７０の熱伝導率は樹脂の熱伝導率より高く、およそ数百倍から１０００倍である。このため、金属板７０へ伝わった熱はただちに放熱板４５およびスルーホール１６を介して基板１０下側へ伝わる。 On the other hand, the heat transmitted to the metal plate 70 is also conducted to the heat radiating plate 45. Also in the third modification, since the heat radiation performance is improved by providing the heat radiating plate 45, it is possible to avoid a temperature rise that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed and discolored. In addition, the heat conductivity of the metal plate 70 is higher than the heat conductivity of the resin, and is approximately several hundred times to 1000 times. Therefore, the heat transmitted to the metal plate 70 is immediately transmitted to the lower side of the substrate 10 through the heat radiating plate 45 and the through hole 16.
（変形例４）
　図６は、変形例４による光源一体型光センサ１Ｅの断面図である。図６による光源一体型光センサ１Ｅは、図３の光源一体型光センサ１Ｂと比べて、空間６０内に熱伝導率が高い材料、例えば金属板７０を設けている点、および金属板７０の直下となる位置に合わせてスルーホール１６が形成される点が異なる。 (Modification 4)
FIG. 6 is a cross-sectional view of a light source integrated photosensor 1E according to Modification 4. The light source integrated photosensor 1E according to FIG. 6 is provided with a material having a high thermal conductivity, for example, a metal plate 70 in the space 60 as compared with the light source integrated photosensor 1B of FIG. The difference is that the through hole 16 is formed in accordance with the position immediately below.
　変形例４の光源一体型光センサ１Ｅは、スルーホール１６が追加形成された基板１０Ｂに対して光源一体型光センサ１Ｂと同様の処理を施した上で、スルーホール１６の真上に導熱性材料である金属板７０を設ける。発光チップ３０側から金属板７０へ伝わった熱は、スルーホール１６を介して基板１０Ｂの下面側パターン１７からも放熱可能である。 In the light source integrated photosensor 1E of Modification 4, the substrate 10B additionally provided with the through hole 16 is subjected to the same processing as that of the light source integrated photosensor 1B, and the heat conductivity is directly above the through hole 16. A metal plate 70 as a material is provided. The heat transmitted from the light emitting chip 30 side to the metal plate 70 can also be radiated from the lower surface side pattern 17 of the substrate 10B through the through hole 16.
　なお、金属板７０と透明樹脂４１Ｂとの間は、発光チップ３０側の熱を金属板７０へ吸収しやすくするために充填剤を塗布して隙間を埋めてもよい。空間６０をスルーホール１６の真上に設けておいたことにより、空間６０に設けた金属板７０がスルーホール１６上に位置することから、金属板７０に伝わった熱は、スルーホール１６を介して基板１０下側へ効率よく逃がせる。 Note that a gap may be filled between the metal plate 70 and the transparent resin 41B by applying a filler so that the heat on the light emitting chip 30 side can be easily absorbed into the metal plate 70. Since the space 60 is provided immediately above the through hole 16, the metal plate 70 provided in the space 60 is positioned on the through hole 16, so that the heat transferred to the metal plate 70 is transmitted through the through hole 16. Thus, it is possible to efficiently escape to the lower side of the substrate 10.
　一方、金属板７０へ伝わった熱は放熱板４５へも伝導する。変形例４の場合も、放熱板４５を設けて放熱性を高めたので、受光チップ２０を覆う透明樹脂４１Ａの表面を変形、変色に至らしめるような温度上昇を避けることができる。変形例３の場合と同様に、金属板７０の熱伝導率は樹脂の熱伝導率より高いので、金属板７０へ伝わった熱はただちに放熱板４５およびスルーホール１６を介して基板１０下側へ伝わる。 On the other hand, the heat transmitted to the metal plate 70 is also conducted to the heat radiating plate 45. In the case of the modified example 4 as well, since the heat radiation performance is improved by providing the heat radiating plate 45, it is possible to avoid a temperature rise that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed and discolored. As in the case of the modified example 3, the heat conductivity of the metal plate 70 is higher than the heat conductivity of the resin, so that the heat transmitted to the metal plate 70 immediately goes to the lower side of the substrate 10 via the heat radiating plate 45 and the through hole 16. It is transmitted.
（変形例５）
　変形例３または変形例４のように金属板７０を設ける場合には、不透明樹脂５１Ａ、５１Ｂまたは不透明樹脂５１を省略してもよい。この場合は、発光チップ３０から受光チップ２０側へ射出される直接光を金属板７０によって遮蔽する。 (Modification 5)
When the metal plate 70 is provided as in the third modification or the fourth modification, the opaque resins 51A and 51B or the opaque resin 51 may be omitted. In this case, the direct light emitted from the light emitting chip 30 to the light receiving chip 20 side is shielded by the metal plate 70.
＜第二の実施形態＞
　図７は、本発明の第二の実施形態による光源一体型光センサ２を例示する図である。図７(a)は光源一体型光センサ２の上面図であり、図７(b)は図７(a)における光源一体型光センサ２のＥ－Ｅ’断面図である。第一の実施形態による光源一体型光センサ１（図１）と比べると、センサの周囲に不透明樹脂５１Ｃおよび不透明樹脂５１Ｄを設けている点が相違するので、この相違点を中心に光源一体型光センサ２の製造方法を説明する。 <Second Embodiment>
FIG. 7 is a diagram illustrating the light source integrated photosensor 2 according to the second embodiment of the invention. FIG. 7A is a top view of the light source integrated photosensor 2, and FIG. 7B is a cross-sectional view of the light source integrated photosensor 2 taken along line EE ′ in FIG. 7A. Compared with the light source integrated optical sensor 1 (FIG. 1) according to the first embodiment, the difference is that the opaque resin 51C and the opaque resin 51D are provided around the sensor. A method for manufacturing the optical sensor 2 will be described.
　光源一体型光センサ２の製造手順のうち、受光チップ２０およびボンディングワイヤ２１、２２、および発光チップ３０およびボンディングワイヤ３１をそれぞれ覆うように透明樹脂４１で封止する（図２(b)）までの手順は、第一の実施形態で説明した手順と同様なので説明を省略する。第二の実施形態では、透明樹脂４１による封止状態から、受光チップ２０および発光チップ３０間と、基板１０上の外周部とにおいて、それぞれ透明樹脂４１の一部を基板１０の表面に到達するまで切削するダイシング加工を施す。これにより、図８(a)、図８(b)に例示するように、透明樹脂４１が透明樹脂４１Ａと４１Ｂとに分離される。図８(a)はこの時点における上面図であり、図８(b)は、この時点における断面図である。 In the manufacturing procedure of the light source integrated photosensor 2, until the light receiving chip 20 and the bonding wires 21 and 22 and the light emitting chip 30 and the bonding wire 31 are respectively covered with the transparent resin 41 (FIG. 2B). Since the procedure is the same as the procedure described in the first embodiment, the description thereof is omitted. In the second embodiment, a part of the transparent resin 41 reaches the surface of the substrate 10 from the sealing state with the transparent resin 41 between the light receiving chip 20 and the light emitting chip 30 and the outer peripheral portion on the substrate 10. Dicing process is performed to cut up to. Thereby, as illustrated in FIG. 8A and FIG. 8B, the transparent resin 41 is separated into the transparent resins 41A and 41B. FIG. 8A is a top view at this point, and FIG. 8B is a cross-sectional view at this point.
　図９(a)において、ダイシング加工した溝に不透明樹脂５１を充填する。不透明樹脂５１には、熱伝導率が高い熱伝導材料を用いる。なお、透明樹脂４１Ａ、不透明樹脂５１、および透明樹脂４１Ｂの表面を同じ高さとする。 In FIG. 9 (a), opaque resin 51 is filled in the dicing groove. For the opaque resin 51, a heat conductive material having high heat conductivity is used. Note that the surfaces of the transparent resin 41A, the opaque resin 51, and the transparent resin 41B have the same height.
　次に、不透明樹脂５１の一部を基板１０の表面に到達するまで切削するダイシング加工を施す。透明樹脂４１Ａおよび透明樹脂４１Ｂ間の距離より幅の狭いブレードを用いることにより、図９(b)に例示したように、不透明樹脂５１を不透明樹脂５１Ａと５１Ｂとに分離する空間６０が得られる。最後に、開口４５Ｂと開口４５Ａとを有する放熱板４５を、不透明樹脂５１Ｃ、透明樹脂４１Ａ、不透明樹脂５１Ａ、空間６０、不透明樹脂５１Ｂ、透明樹脂４１Ｂおよび不透明樹脂５１Ｄの上面に接着すると、図７の光源一体型光センサ２が完成する。 Next, a dicing process is performed in which a part of the opaque resin 51 is cut until it reaches the surface of the substrate 10. By using a blade having a narrower width than the distance between the transparent resin 41A and the transparent resin 41B, a space 60 for separating the opaque resin 51 into the opaque resins 51A and 51B is obtained as illustrated in FIG. 9B. Finally, when the heat radiating plate 45 having the openings 45B and 45A is bonded to the upper surfaces of the opaque resin 51C, the transparent resin 41A, the opaque resin 51A, the space 60, the opaque resin 51B, the transparent resin 41B, and the opaque resin 51D, FIG. The light source integrated photosensor 2 is completed.
　なお、実際に光源一体型光センサ２を製造する場合は、図９(b)に例示したセンサを基板１０Ｃ上に複数形成しておき、各センサ間の不透明樹脂５１をダイシング加工により切断して個片化する。図１０において、黒い太線Ｌは、個片化のための切断箇所を示す。 When the light source integrated photosensor 2 is actually manufactured, a plurality of sensors illustrated in FIG. 9B are formed on the substrate 10C, and the opaque resin 51 between the sensors is cut by dicing. Divide into pieces. In FIG. 10, the black thick line L shows the cutting location for individualization.
　以上説明した第二の実施形態によれば、次の作用効果が得られる。
（１）光源一体型光センサ２は、基板１０Ｃ上の所定領域に設けられた受光チップ２０と、基板１０Ｃ上の受光チップ２０と異なる領域に設けられた発光チップ３０と、受光チップ２０上に当該受光チップ２０を覆うように設けられた透明樹脂４１Ａと、発光チップ３０上に当該発光チップ３０を覆うように設けられた透明樹脂４１Ｂと、透明樹脂４１Ａと透明樹脂４１Ｂとの間に設けられた不透明樹脂５１Ａ、５１Ｂと、透明樹脂４１Ａ、４１Ｂ、および不透明樹脂５１Ａ、５１Ｂにそれぞれ接する放熱部材として不透明樹脂５１（５１Ｃ、５１Ｄ）と、を備えるようにした。発光チップ３０で発生した熱を効率よく放熱できるため、発光部からの熱による特性劣化を抑えられる。具体的には、発光チップ３０からの熱が不透明樹脂５１へ伝わると、該不透明樹脂５１からセンサ外へ放熱される。この結果、受光チップ２０を覆う透明樹脂４１Ａの表面を変形、変色に至らしめるような温度上昇を避けることができる。 According to the second embodiment described above, the following operational effects can be obtained.
(1) The light source integrated optical sensor 2 includes a light receiving chip 20 provided in a predetermined region on the substrate 10C, a light emitting chip 30 provided in a region different from the light receiving chip 20 on the substrate 10C, and the light receiving chip 20. A transparent resin 41A provided so as to cover the light receiving chip 20, a transparent resin 41B provided on the light emitting chip 30 so as to cover the light emitting chip 30, and a transparent resin 41A provided between the transparent resin 41A and the transparent resin 41B. The opaque resins 51A and 51B, the transparent resins 41A and 41B, and the opaque resins 51 (51C and 51D) are provided as heat dissipation members in contact with the opaque resins 51A and 51B, respectively. Since heat generated in the light emitting chip 30 can be efficiently radiated, deterioration of characteristics due to heat from the light emitting portion can be suppressed. Specifically, when heat from the light emitting chip 30 is transmitted to the opaque resin 51, the heat is released from the opaque resin 51 to the outside of the sensor. As a result, it is possible to avoid a temperature increase that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed or discolored.
（２）上記（１）の光源一体型光センサ２において、基板１０Ｃの周囲を囲み、熱伝導性を有する不透明樹脂５１（５１Ｃ、５１Ｄ）と、透明樹脂４１Ａおよび透明樹脂４１Ｂの間の不透明樹脂５１Ａ、５１Ｂとによって放熱部材を構成した。一般に、熱伝導性を有する不透明樹脂５１の熱伝導率は、通常の樹脂における熱伝導率より数十倍から約１００倍大きい。このため、発光チップ３０からの熱が不透明樹脂５１へ伝わると、該不透明樹脂５１から周囲のセンサ外へ広く放熱される。 (2) In the light source integrated optical sensor 2 of (1) above, the opaque resin 51 (51C, 51D) that surrounds the substrate 10C and has thermal conductivity, and the opaque resin between the transparent resin 41A and the transparent resin 41B. A heat radiating member was constituted by 51A and 51B. In general, the thermal conductivity of the opaque resin 51 having thermal conductivity is several tens to about 100 times larger than the thermal conductivity of a normal resin. For this reason, when the heat from the light emitting chip 30 is transmitted to the opaque resin 51, the heat is widely dissipated from the opaque resin 51 to the outside of the surrounding sensors.
（３）上記（２）の光源一体型光センサ２において、放熱部材はさらに、発光チップ３０および受光チップ２０に対応する位置に開口４５Ｂ、４５Ａを有し、透明樹脂４１Ａ、４１Ｂおよび不透明樹脂５１Ａ、５１Ｂ、５１Ｃ、５１Ｄが形成する面に上から接する放熱板４５を含むようにした。このため、発光チップ３０からの熱は放熱板４５にも伝わり、該放熱板４５の表面から広くセンサ外へ放熱される。 (3) In the light source integrated optical sensor 2 of (2), the heat dissipating member further has openings 45B and 45A at positions corresponding to the light emitting chip 30 and the light receiving chip 20, and the transparent resins 41A and 41B and the opaque resin 51A. , 51B, 51C, 51D are included so as to include a heat radiating plate 45 in contact with the surface from above. For this reason, the heat from the light emitting chip 30 is also transmitted to the heat radiating plate 45, and is widely radiated from the surface of the heat radiating plate 45 to the outside of the sensor.
（変形例６）
　光源一体型光センサ２から放熱板４５を省略し、基板１０Ｃの周囲を囲む不透明樹脂５１（５１Ｃ、５１Ｄ）と、透明樹脂４１Ａおよび透明樹脂４１Ｂの間の不透明樹脂５１Ａ、５１Ｂとによって放熱部材を構成してもよい（図９(b)の状態)。不透明樹脂５１を基板１０Ｃの周囲に設けると、不透明樹脂５１が空気と接する表面積が広くなる。これによって、発光チップ３０における発熱量より不透明樹脂５１からの放熱量が大きくなる場合には、放熱板４５を設けなくても、受光チップ２０を覆う透明樹脂４１Ａの表面を変形、変色に至らしめるような温度上昇を避けることができる。 (Modification 6)
The heat radiating plate 45 is omitted from the light source integrated optical sensor 2, and the heat radiating member is formed by the opaque resin 51 (51C, 51D) surrounding the substrate 10C and the opaque resin 51A, 51B between the transparent resin 41A and the transparent resin 41B. You may comprise (state of FIG.9 (b)). When the opaque resin 51 is provided around the substrate 10C, the surface area where the opaque resin 51 is in contact with air is increased. As a result, when the heat dissipation amount from the opaque resin 51 is larger than the heat generation amount in the light emitting chip 30, the surface of the transparent resin 41A covering the light receiving chip 20 is deformed and discolored without providing the heat dissipation plate 45. Such temperature rise can be avoided.
（変形例７）
　以上の説明では、空間６０の深さを基板１０の表面に到達する深さにする例を説明した。この代わりに、基板１０の表面に達する深さにしなくても、発光チップ３０から受光チップ２０側へセンサ内を伝わる光を遮蔽できる場合には、空間６０の深さを基板１０まで到達しない途中の深さにとどめた（ハーフカットする）構成にしてもよい。 (Modification 7)
In the above description, an example in which the depth of the space 60 is set to a depth that reaches the surface of the substrate 10 has been described. Alternatively, if the light transmitted from the light emitting chip 30 to the light receiving chip 20 side can be shielded without reaching the surface of the substrate 10, the depth of the space 60 is not reached to the substrate 10. It is also possible to adopt a configuration in which the depth is limited (half cut).
（変形例８）
　上記説明では、受光チップ２０、発光チップ３０と基板１０のパターンとの間をボンディング接続する例を説明したが、これ以外の接続方法、例えばフリップチップ接続やＴＡＢ接続を用いてもよい。 (Modification 8)
In the above description, an example in which the light receiving chip 20, the light emitting chip 30 and the pattern of the substrate 10 are bonded and connected has been described. However, other connection methods such as flip chip connection and TAB connection may be used.
　上記では、種々の実施の形態および変形例を説明したが、本発明はこれらの内容に限定されるものではない。各実施形態および各変形例の構成は、適宜組み合わせても構わない。本発明の技術的思想の範囲内で考えられるその他の態様も本発明の範囲内に含まれる。 Although various embodiments and modifications have been described above, the present invention is not limited to these contents. The configurations of each embodiment and each modification may be combined as appropriate. Other embodiments conceivable within the scope of the technical idea of the present invention are also included in the scope of the present invention.
　次の優先権基礎出願の開示内容は引用文としてここに組み込まれる。
　日本国特許出願２０１２年第１３８５８９号（２０１２年６月２０日出願）
  The disclosure of the following priority application is hereby incorporated by reference.
Japanese patent application 2012 No. 138589 (filed on June 20, 2012)

Claims (8)

  1. 　基板上の所定領域に設けられた受光部と、
    　前記基板上の前記受光部と異なる領域に設けられた発光部と、
    　前記受光部上に当該受光部を覆うように設けられた第１透光部材と、
    　前記発光部上に当該発光部を覆うように設けられた第２透光部材と、
    　前記第１透光部材と前記第２透光部材との間に設けられた遮光部材と、
    　前記第１透光部材、前記第２透光部材および前記遮光部材とそれぞれ接する放熱部材と、
    を備える光源一体型光センサ。     A light receiving portion provided in a predetermined area on the substrate;
    A light emitting unit provided in a region different from the light receiving unit on the substrate;
    A first light transmissive member provided on the light receiving portion so as to cover the light receiving portion;
    A second translucent member provided on the light emitting unit so as to cover the light emitting unit;
    A light shielding member provided between the first light transmissive member and the second light transmissive member;
    A heat radiating member in contact with each of the first light transmissive member, the second light transmissive member, and the light shielding member;
    A light source integrated optical sensor.
  2. 　請求項１に記載の光源一体型光センサにおいて、
    　前記放熱部材は、前記発光部および前記受光部に対応する位置に開口を有し、前記第１透光部材、前記第２透光部材および前記遮光部材が形成する面に上から接する平面部材で構成される光源一体型光センサ。     The light source integrated photosensor according to claim 1,
    The heat radiating member is a planar member that has an opening at a position corresponding to the light emitting portion and the light receiving portion, and is in contact with a surface formed by the first light transmitting member, the second light transmitting member, and the light shielding member from above. A light source integrated optical sensor configured.
  3. 　請求項１または２に記載の光源一体型光センサにおいて、
    　前記遮光部材に代えて、または前記遮光部材に沿って前記基板と前記放熱部材とにそれぞれ接する熱伝導部材をさらに備える光源一体型光センサ。     The light source integrated photosensor according to claim 1 or 2,
    A light source integrated optical sensor further comprising a heat conducting member that is in contact with the substrate and the heat radiating member in place of the light shielding member or along the light shielding member.
  4. 　請求項３に記載の光源一体型光センサにおいて、
    　前記熱伝導部材は、前記基板に設けられているスルーホールに接する光源一体型光センサ。     The light source integrated photosensor according to claim 3,
    The heat conducting member is a light source integrated optical sensor in contact with a through hole provided in the substrate.
  5. 　請求項１に記載の光源一体型光センサにおいて、
    　前記放熱部材は、
    　前記基板の周囲を囲み、熱伝導性を有する第２の遮光部材によって構成されている光源一体型光センサ。     The light source integrated photosensor according to claim 1,
    The heat dissipation member is
    A light source integrated photosensor that surrounds the periphery of the substrate and includes a second light-shielding member having thermal conductivity.
  6. 　請求項５に記載の光源一体型光センサにおいて、
    　前記放熱部材はさらに、
    　前記発光部および前記受光部に対応する位置に開口を有し、前記第１透光部材、前記第２透光部材および前記第２の遮光部材が形成する面に上から接する平面部材を含む光源一体型光センサ。     The light source integrated photosensor according to claim 5,
    The heat dissipating member is further
    A light source including an opening at a position corresponding to the light emitting unit and the light receiving unit, and a planar member in contact with a surface formed by the first light transmitting member, the second light transmitting member, and the second light shielding member from above Integrated optical sensor.
  7. 　請求項６に記載の光源一体型光センサにおいて、
    　前記基板と前記平面部材とにそれぞれ接する熱伝導部材をさらに備える光源一体型光センサ。     The light source integrated photosensor according to claim 6,
    A light source integrated photosensor further comprising a heat conducting member in contact with each of the substrate and the planar member.
  8. 　請求項７に記載の光源一体型光センサにおいて、
    　前記熱伝導部材は、前記基板に設けられているスルーホールに接する光源一体型光センサ。
          The light source integrated photosensor according to claim 7,
    The heat conducting member is a light source integrated optical sensor in contact with a through hole provided in the substrate.
PCT/JP2013/057074 2012-06-20 2013-03-13 Light source-integrated optical sensor WO2013190871A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/JP2013/066919 WO2013191235A1 (en) 2012-06-20 2013-06-20 Light source-integrated optical sensor
JP2014521500A JP6133287B2 (en) 2012-06-20 2013-06-20 Light source integrated light sensor
CN201380032199.XA CN104396026B (en) 2012-06-20 2013-06-20 Light source integrated optical sensor
TW102121883A TWI581449B (en) 2012-06-20 2013-06-20 Light source integrated light sensor
JP2017001219A JP6312872B2 (en) 2012-06-20 2017-01-06 Light source integrated light sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012138589 2012-06-20
JP2012-138589 2012-06-20

Publications (1)

Publication Number Publication Date
WO2013190871A1 true WO2013190871A1 (en) 2013-12-27

Family

ID=49768480

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2013/057074 WO2013190871A1 (en) 2012-06-20 2013-03-13 Light source-integrated optical sensor
PCT/JP2013/066919 WO2013191235A1 (en) 2012-06-20 2013-06-20 Light source-integrated optical sensor

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/066919 WO2013191235A1 (en) 2012-06-20 2013-06-20 Light source-integrated optical sensor

Country Status (4)

Country Link
JP (2) JP6133287B2 (en)
CN (1) CN104396026B (en)
TW (1) TWI581449B (en)
WO (2) WO2013190871A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6679306B2 (en) * 2015-12-28 2020-04-15 シャープ株式会社 Method of manufacturing light emitting device
JP6620176B2 (en) * 2018-01-29 2019-12-11 アオイ電子株式会社 Semiconductor device
JP7420725B2 (en) 2018-08-31 2024-01-23 ソニーセミコンダクタソリューションズ株式会社 Light emitting device and display device
CN111341768B (en) * 2020-03-06 2022-01-11 弘凯光电(深圳)有限公司 Sensing module

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001185751A (en) * 1999-12-24 2001-07-06 Citizen Electronics Co Ltd Structure of surface mounting infrared communication module and driving circuit
JP2005340727A (en) * 2004-05-31 2005-12-08 New Japan Radio Co Ltd Manufacturing method of light emitting and receiving element
JP2007042881A (en) * 2005-08-03 2007-02-15 Sharp Corp Infrared communication device
JP2010114196A (en) * 2008-11-05 2010-05-20 Rohm Co Ltd Reflection-type photointerrupter

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118755U (en) * 1982-02-04 1983-08-13 オムロン株式会社 Mounting structure of semiconductor image sensor
JPS61204989A (en) * 1985-03-08 1986-09-11 Toshiba Corp Semiconductor photoelectric converter
JPS6285479A (en) * 1985-10-11 1987-04-18 Toshiba Corp Semiconductor composite photo receiving and emitting device
US5912872A (en) * 1996-09-27 1999-06-15 Digital Optics Corporation Integrated optical apparatus providing separated beams on a detector and associated methods
JPH11289105A (en) * 1998-04-03 1999-10-19 Citizen Electronics Co Ltd Photoreflector and manufacture thereof
JP2001308372A (en) * 2000-04-18 2001-11-02 Citizen Electronics Co Ltd Reflection optical sensor
JP2004071734A (en) * 2002-08-05 2004-03-04 New Japan Radio Co Ltd Method of manufacturing light receiving and emitting device
TW560027B (en) * 2002-08-29 2003-11-01 Tung-An Chen LED package with inserted metal cup
JP2005044861A (en) * 2003-07-23 2005-02-17 Seiko Epson Corp Semiconductor device, method of using the same, method of manufacturing the same, and electronic apparatus
US7456499B2 (en) * 2004-06-04 2008-11-25 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
JP4349978B2 (en) * 2004-06-17 2009-10-21 シチズン電子株式会社 Optical semiconductor package and manufacturing method thereof
TWM274648U (en) * 2004-07-02 2005-09-01 Li-Jie Huang Light emission device that have the function of heat dissipation
JP4413707B2 (en) * 2004-08-16 2010-02-10 ポリプラスチックス株式会社 Heat-dissipating resin molded product with multilayer structure
JPWO2006095834A1 (en) * 2005-03-09 2008-08-21 旭化成エレクトロニクス株式会社 Optical device and method of manufacturing optical device
JP2008010832A (en) * 2006-06-01 2008-01-17 Nippon Telegr & Teleph Corp <Ntt> Optical sensor, sensor chip, and biological information measuring device
WO2009107535A1 (en) * 2008-02-25 2009-09-03 株式会社東芝 White led lamp, backlight, light emitting device, display device and lighting device
JP5105483B2 (en) * 2008-09-19 2012-12-26 古河スカイ株式会社 Resin coated aluminum plate
TWM356225U (en) * 2008-10-24 2009-05-01 Solidlite Corp LED lead-frame structure having better heat dissipation effect
US8779361B2 (en) * 2009-06-30 2014-07-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Optical proximity sensor package with molded infrared light rejection barrier and infrared pass components
JP4699551B2 (en) * 2009-11-02 2011-06-15 シャープ株式会社 Optical pointing device and electronic device including the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001185751A (en) * 1999-12-24 2001-07-06 Citizen Electronics Co Ltd Structure of surface mounting infrared communication module and driving circuit
JP2005340727A (en) * 2004-05-31 2005-12-08 New Japan Radio Co Ltd Manufacturing method of light emitting and receiving element
JP2007042881A (en) * 2005-08-03 2007-02-15 Sharp Corp Infrared communication device
JP2010114196A (en) * 2008-11-05 2010-05-20 Rohm Co Ltd Reflection-type photointerrupter

Also Published As

Publication number Publication date
TWI581449B (en) 2017-05-01
CN104396026B (en) 2017-06-30
JP6133287B2 (en) 2017-05-24
JP2017098571A (en) 2017-06-01
TW201401541A (en) 2014-01-01
CN104396026A (en) 2015-03-04
JPWO2013191235A1 (en) 2016-05-26
JP6312872B2 (en) 2018-04-18
WO2013191235A1 (en) 2013-12-27

Similar Documents

Publication Publication Date Title
KR101659677B1 (en) Light source-integrated optical sensor and method for manufacturing light source-integrated optical sensor
TWI556422B (en) Image module package and manufacturing method thereof
JP5243806B2 (en) Ultraviolet light emitting device
JP5847644B2 (en) Manufacturing method of light source integrated optical sensor
JP6312872B2 (en) Light source integrated light sensor
JP5896758B2 (en) LED light emitting device
JP2015165551A (en) Optical sensor device
US20160190397A1 (en) Led package structure and the manufacturing method of the same
CN110718543A (en) Optical device and method for manufacturing the same
JP2007080874A (en) Light-emitting device
JP5855590B2 (en) Light source integrated light sensor
US7741651B2 (en) Light emitting diode
JP4877239B2 (en) Method for manufacturing light emitting device
JP2010278317A (en) Light emitting device
JP2010045108A (en) Optical semiconductor device and manufacturing method thereof
WO2013168442A1 (en) Light source-integrated optical sensor and method for manufacturing light source-integrated optical sensor
JP2016162860A (en) Led light-emitting device
JP2009177099A (en) Light-emitting device
JP2010287685A (en) Led module
JP2007053196A (en) Photodetector module and its manufacturing method
JP2007088077A (en) Light-emitting device
JP7257288B2 (en) Optical sensor package, multi-cavity wiring board, optical sensor device and electronic module
JP2016518716A (en) Wavelength conversion elements, optoelectronic components, and printing stencils
JP2015185621A (en) semiconductor light-emitting device
JP2009177101A (en) Light-emitting device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13807002

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13807002

Country of ref document: EP

Kind code of ref document: A1