JP5243806B2 - Ultraviolet light emitting device - Google Patents

Ultraviolet light emitting device Download PDF

Info

Publication number
JP5243806B2
JP5243806B2 JP2008016916A JP2008016916A JP5243806B2 JP 5243806 B2 JP5243806 B2 JP 5243806B2 JP 2008016916 A JP2008016916 A JP 2008016916A JP 2008016916 A JP2008016916 A JP 2008016916A JP 5243806 B2 JP5243806 B2 JP 5243806B2
Authority
JP
Japan
Prior art keywords
substrate
light
ultraviolet
led chip
ultraviolet light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008016916A
Other languages
Japanese (ja)
Other versions
JP2009177098A (en
Inventor
佳治 佐名川
健一郎 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2008016916A priority Critical patent/JP5243806B2/en
Publication of JP2009177098A publication Critical patent/JP2009177098A/en
Application granted granted Critical
Publication of JP5243806B2 publication Critical patent/JP5243806B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Description

本発明は、紫外光を放射する紫外光ＬＥＤチップ（紫外光発光ダイオードチップ）を利用した紫外光発光装置に関するものである。   The present invention relates to an ultraviolet light emitting device using an ultraviolet LED chip (ultraviolet light emitting diode chip) that emits ultraviolet light.

従来から、紫外光を放射する紫外光ＬＥＤチップ（紫外光発光ダイオードチップ）を利用した紫外光発光装置の研究開発が各所で行われ（例えば、特許文献１，２参照）、紫外光発光装置を殺菌用途などに用いることも提案されている（例えば、特許文献３）。   Conventionally, research and development of ultraviolet light emitting devices using ultraviolet LED chips (ultraviolet light emitting diode chips) that emit ultraviolet light have been conducted in various places (for example, see Patent Documents 1 and 2). It has also been proposed to be used for sterilization applications (for example, Patent Document 3).

ここにおいて、上記特許文献１には、図１０に示すように、紫外光を放射するＧａＮ系の紫外光ＬＥＤチップ１１０と、紫外光ＬＥＤチップ１１０が一表面側に実装された実装基板１２０と、実装基板１２０の上記一表面側において紫外光ＬＥＤチップ１１０から離間して配置され紫外光ＬＥＤチップ１１０から放射された光を集光する集光レンズ１７０と、実装基板１２０の上記一表面上において紫外光ＬＥＤチップ１１０を囲むように配置され集光レンズ１７０を接着剤部１６０を介して保持する枠状のレンズ保持部材１５０と、実装基板１２０とレンズ保持部材１５０と集光レンズ１７０とで囲まれる空間に充填された透光性封止材（例えば、シリコーン樹脂またはフッ素系樹脂）からなる封止部１３５とを備えた紫外光発光装置が記載されている。   Here, in Patent Document 1, as shown in FIG. 10, a GaN-based ultraviolet LED chip 110 that emits ultraviolet light, a mounting substrate 120 on which the ultraviolet LED chip 110 is mounted on one surface side, A condensing lens 170 for condensing light emitted from the ultraviolet LED chip 110 that is disposed apart from the ultraviolet LED chip 110 on the one surface side of the mounting substrate 120, and an ultraviolet light on the one surface of the mounting substrate 120. Surrounding the optical LED chip 110 by a frame-shaped lens holding member 150 that is disposed so as to surround the optical LED chip 110 and holds the condenser lens 170 via the adhesive portion 160, the mounting substrate 120, the lens holding member 150, and the condenser lens 170. An ultraviolet light emitting device including a sealing portion 135 made of a light-transmitting sealing material (for example, silicone resin or fluorine-based resin) filled in a space is described. It is.

なお、図１０に示した構成の紫外光発光装置では、実装基板１２０とレンズ保持部材１５０と集光レンズ１７０とでパッケージを構成している。また、図１０に示した構成の紫外光発光装置は、集光レンズ１７０がガラスにより形成されており、封止部１３５が、気体（例えば、窒素）に比べて紫外光ＬＥＤチップ１１０の発光層との屈折率差が小さい屈折率差緩和部を構成している。また、上記特許文献１には、紫外光発光装置を、例えば、光ディスク用のピックアップレンズの接着や、電子部品の基板への接着などの光照射処理を行うための紫外線照射装置の光源として用いることが記載されている。   In the ultraviolet light emitting device having the configuration shown in FIG. 10, the mounting substrate 120, the lens holding member 150, and the condenser lens 170 constitute a package. In the ultraviolet light emitting device having the configuration shown in FIG. 10, the condensing lens 170 is made of glass, and the sealing portion 135 is a light emitting layer of the ultraviolet LED chip 110 as compared with gas (for example, nitrogen). The refractive index difference alleviating part is small. In Patent Document 1, an ultraviolet light emitting device is used as a light source of an ultraviolet irradiation device for performing light irradiation processing such as adhesion of a pickup lens for an optical disk or adhesion of an electronic component to a substrate. Is described.

また、上記特許文献２には、紫外光ＬＥＤチップをパッケージに収納した紫外光発光装置を照明用途に利用することが記載されている。   Patent Document 2 describes that an ultraviolet light emitting device in which an ultraviolet LED chip is housed in a package is used for illumination.

また、上記特許文献３には、紫外光ＬＥＤチップおよび一対のリード端子の各一部を透光性樹脂によりモールドした砲弾型の紫外光発光装置が記載されている。
特開２００７−３１１７０７号公報 特開２００７−７３６３０号公報 特開２００７−７５１４９号公報 Patent Document 3 describes a bullet-type ultraviolet light emitting device in which each part of an ultraviolet LED chip and a pair of lead terminals is molded with a light-transmitting resin.
JP 2007-311707 A JP 2007-73630 A JP 2007-75149 A

ところで、紫外光発光装置については、種々の用途が考えられ、例えば、殺菌用途などに用いる場合、所望の殺菌効果を得るために所定の光強度以上の紫外光を放射させる必要があるが、上記特許文献１に記載された紫外光発光装置では、紫外光ＬＥＤチップ１１０を一定の駆動電流で動作させても経時的に光量が低下するので、所望の光量を再現性良く得るのが難しくなるという問題があり、所望の殺菌効果が得られなくなってしまうという懸念があった。一方、上記特許文献１に記載された紫外光発光装置では、紫外光ＬＥＤチップ１１０から放射される紫外光の強度が強すぎると、封止部１３５などの他の部分の劣化が促進されてしまうという問題があり、封止部１３５が劣化すると透過率が低下し、紫外光発光装置から放射される紫外光の光量が低下してしまう。また、上記特許文献１に記載された紫外光発光装置では、紫外光ＬＥＤチップ１１０が点灯しているのか消灯しているのか視認することができないという問題がある。なお、上記特許文献２，３に記載の紫外光発光装置についても、同様の問題がある。   By the way, various uses are considered for the ultraviolet light emitting device. For example, when used for sterilization applications, it is necessary to radiate ultraviolet light having a predetermined light intensity or more in order to obtain a desired sterilization effect. In the ultraviolet light emitting device described in Patent Document 1, the amount of light decreases with time even when the ultraviolet LED chip 110 is operated with a constant driving current, and it is difficult to obtain a desired amount of light with good reproducibility. There was a problem that the desired bactericidal effect could not be obtained. On the other hand, in the ultraviolet light emitting device described in Patent Document 1, when the intensity of ultraviolet light emitted from the ultraviolet LED chip 110 is too strong, deterioration of other portions such as the sealing portion 135 is promoted. When the sealing part 135 deteriorates, the transmittance decreases, and the amount of ultraviolet light emitted from the ultraviolet light emitting device decreases. Moreover, in the ultraviolet light-emitting device described in the said patent document 1, there exists a problem that it cannot be visually recognized whether the ultraviolet-light LED chip 110 is lighted or light-extinguished. The ultraviolet light emitting devices described in Patent Documents 2 and 3 have the same problem.

本発明は上記事由に鑑みて為されたものであり、その目的は、所望の光量の紫外光を再現性良く得ることが可能な紫外光発光装置を提供することにある。   The present invention has been made in view of the above reasons, and an object of the present invention is to provide an ultraviolet light emitting device capable of obtaining a desired amount of ultraviolet light with good reproducibility.

請求項１の発明は、紫外光を放射する紫外光ＬＥＤチップと、紫外光ＬＥＤチップを収納するパッケージとを備え、パッケージに、紫外光ＬＥＤチップから放射された紫外光を検出する受光素子が設けられてなるものであり、パッケージは、収納凹所が一表面に形成され収納凹所の内底面に紫外光ＬＥＤチップが実装された実装基板と、実装基板の前記一表面側において収納凹所を閉塞する形で実装基板に固着された透光性部材とで構成されており、実装基板に受光素子が設けられており、透光性部材に集光レンズを連続一体に形成してあることを特徴とする。 The invention of claim 1 includes an ultraviolet LED chip that emits ultraviolet light and a package that houses the ultraviolet LED chip, and a light receiving element that detects ultraviolet light emitted from the ultraviolet LED chip is provided in the package. is a shall such, the package includes a mounting substrate ultraviolet light LED chip is mounted on the inner bottom surface of the housing recess formed on one surface housing concavity, housing concavities on the one surface side of the mounting board And a light-transmitting member fixed to the mounting substrate in a form that closes the substrate, a light-receiving element is provided on the mounting substrate, and a condensing lens is continuously formed on the light-transmitting member. It is characterized by.

この発明によれば、紫外光ＬＥＤチップを収納するパッケージに、紫外光ＬＥＤチップから放射された紫外光を検出する受光素子が設けられているので、パッケージあるいは外部に受光素子の出力に基づいて紫外光ＬＥＤチップの駆動電流をフィードバック制御する制御部を設けることにより、所望の光量の紫外光を再現性良く得ることが可能になる。また、別途に点灯モニター用の可視光ＬＥＤチップを設けて、受光素子の出力に基づいて可視光ＬＥＤチップを適宜点灯させることにより、紫外光ＬＥＤチップが点灯しているか消灯しているかを視認することが可能となる。また、この発明によれば、透光性部材に集光レンズを連続一体に形成してあるので、外部への光取出し効率を高めることができる。 According to the present invention, since the light receiving element for detecting the ultraviolet light emitted from the ultraviolet light LED chip is provided in the package that accommodates the ultraviolet light LED chip , the ultraviolet light based on the output of the light receiving element is provided on the package or outside. By providing a control unit that feedback-controls the driving current of the optical LED chip, it is possible to obtain a desired amount of ultraviolet light with good reproducibility. In addition, a visible light LED chip for lighting monitor is separately provided, and the visible light LED chip is appropriately turned on based on the output of the light receiving element, thereby visually checking whether the ultraviolet light LED chip is turned on or off. It becomes possible . Further, according to the present invention, since the condensing lens is continuously formed integrally with the translucent member, the light extraction efficiency to the outside can be improved.

請求項２の発明は、請求項１の発明において、前記パッケージは、無機材料により形成されてなることを特徴とする。   According to a second aspect of the invention, in the first aspect of the invention, the package is made of an inorganic material.

この発明によれば、前記パッケージが無機材料により形成されているので、前記紫外光ＬＥＤチップから放射される紫外光によって前記パッケージが劣化するのを抑制することができる。   According to this invention, since the package is formed of an inorganic material, it is possible to suppress the package from being deteriorated by the ultraviolet light emitted from the ultraviolet LED chip.

請求項３の発明は、請求項２の発明において、前記実装基板は、少なくとも、前記無機材料により形成され前記紫外光ＬＥＤチップが搭載されたベース基板と、前記無機材料により形成され前記受光素子が形成された受光素子形成基板とを備えることを特徴とする。 The invention according to claim 3, characterized in that in the invention of claim 2, before Symbol mounting substrate, at least, the base substrate on which the ultraviolet LED chip is formed is mounted by an inorganic material, it is formed by the inorganic material the light receiving element And a light receiving element forming substrate on which is formed.

この発明によれば、前記パッケージに前記受光素子を容易に且つ位置精度良く形成することが可能となる。   According to the present invention, the light receiving element can be easily and accurately formed on the package.

請求項４の発明は、請求項２または請求項３の発明において、前記パッケージ内で前記紫外光ＬＥＤチップを封止した封止部を備え、当該封止部が透光性無機材料により形成されてなることを特徴とする。   The invention of claim 4 is the invention of claim 2 or claim 3, further comprising a sealing portion that seals the ultraviolet LED chip in the package, and the sealing portion is formed of a translucent inorganic material. It is characterized by.

この発明によれば、前記紫外光ＬＥＤチップを封止した封止部が透光性無機材料により形成されているので、前記紫外光ＬＥＤチップから放射される紫外光によって封止部が劣化するのを抑制することができ、封止部の劣化に起因した光量低下を抑制することができる。   According to this invention, since the sealing part which sealed the said ultraviolet light LED chip is formed of the translucent inorganic material, a sealing part deteriorates with the ultraviolet light radiated | emitted from the said ultraviolet light LED chip. It is possible to suppress the decrease in the amount of light due to the deterioration of the sealing portion.

請求項５の発明は、請求項４の発明において、前記透光性無機材料は、ガラスであることを特徴とする。   The invention of claim 5 is characterized in that, in the invention of claim 4, the translucent inorganic material is glass.

この発明によれば、前記封止部の耐久性を向上させることができる。   According to this invention, the durability of the sealing part can be improved.

請求項１の発明では、所望の光量の紫外光を再現性良く得ることが可能になるという効果がある。   According to the first aspect of the invention, there is an effect that it is possible to obtain a desired amount of ultraviolet light with good reproducibility.

以下、本実施形態の紫外光発光装置について図１〜図９に基づいて説明する。   Hereinafter, the ultraviolet light-emitting device of this embodiment is demonstrated based on FIGS.

本実施形態の紫外光発光装置は、紫外光を放射する紫外光ＬＥＤチップ１と、紫外光ＬＥＤチップ１を収納するパッケージＡとを備え、パッケージＡに、紫外光ＬＥＤチップ１から放射された紫外光を検出する受光素子４が設けられている。   The ultraviolet light emitting device of the present embodiment includes an ultraviolet LED chip 1 that emits ultraviolet light and a package A that houses the ultraviolet LED chip 1. The ultraviolet light emitted from the ultraviolet LED chip 1 is included in the package A. A light receiving element 4 for detecting light is provided.

ここにおいて、パッケージＡは、紫外光ＬＥＤチップ１を収納する収納凹所２ａが一表面に形成され収納凹所２ａの内底面に紫外光ＬＥＤチップ１が実装された実装基板２と、実装基板２の上記一表面側において収納凹所２ａを閉塞する形で実装基板２に固着された透光性部材３とで構成されており、実装基板２に受光素子４が設けられている。また、パッケージＡは、実装基板２の収納凹所２ａ内が、紫外光ＬＥＤチップ１および当該紫外光ＬＥＤチップ１に接続されたボンディングワイヤ１４（図２参照）を封止した透光性無機材料（例えば、ガラスなど）からなる封止部５により充実されている。ここで、実装基板２は、上記一表面側において収納凹所２ａの周部から内方へ突出した庇状の突出部２ｃを有しており、当該突出部２ｃに受光素子４が設けられている。なお、本実施形態では、実装基板２と透光性部材３とでパッケージＡを構成しているが、透光性部材３は、必ずしも設けなくてもよく、必要に応じて適宜設ければよい。   Here, the package A includes a mounting substrate 2 in which a storage recess 2a for storing the ultraviolet LED chip 1 is formed on one surface and the ultraviolet LED chip 1 is mounted on the inner bottom surface of the storage recess 2a, and a mounting substrate 2 The light-receiving element 4 is provided on the mounting substrate 2. The translucent member 3 is fixed to the mounting substrate 2 so as to close the storage recess 2 a on the one surface side. The package A has a light-transmitting inorganic material in which the housing recess 2a of the mounting substrate 2 seals the ultraviolet LED chip 1 and the bonding wire 14 (see FIG. 2) connected to the ultraviolet LED chip 1. It is enriched by a sealing portion 5 made of (for example, glass). Here, the mounting substrate 2 has a hook-like protruding portion 2c protruding inward from the peripheral portion of the storage recess 2a on the one surface side, and the light receiving element 4 is provided on the protruding portion 2c. Yes. In the present embodiment, the package A is configured by the mounting substrate 2 and the translucent member 3, but the translucent member 3 is not necessarily provided, and may be appropriately provided as necessary. .

実装基板２は、図１〜図３に示すように、紫外光ＬＥＤチップ１が一表面側に搭載される矩形板状のベース基板２０と、ベース基板２０の上記一表面側に対向配置され円形状の光取出孔４１が形成されるとともに受光素子４が形成された受光素子形成基板４０と、ベース基板２０と受光素子形成基板４０との間に介在し光取出孔４１に連通する矩形状の開口窓３１が形成された配光用基板３０とで構成されており、ベース基板２０と配光用基板３０と受光素子形成基板４０とで囲まれた空間が上記収納凹所２ａを構成している。ここにおいて、ベース基板２０および配光用基板３０および受光素子形成基板４０の外周形状は矩形状であり、配光用基板３０および受光素子形成基板４０はベース基板２０と同じ外形寸法に形成されている。また、受光素子形成基板４０の厚み寸法はベース基板２０および配光用基板３０の厚み寸法に比べて小さく設定されている。なお、本実施形態では、受光素子形成基板４０において配光用基板３０の開口窓３１上に張り出した部位が上述の突出部２ｃを構成している。   As shown in FIGS. 1 to 3, the mounting substrate 2 includes a rectangular plate-like base substrate 20 on which the ultraviolet LED chip 1 is mounted on one surface side, and a circular plate disposed opposite to the one surface side of the base substrate 20. A light receiving element forming substrate 40 in which a light extraction hole 41 having a shape and a light receiving element 4 are formed, and a rectangular shape that is interposed between the base substrate 20 and the light receiving element forming substrate 40 and communicates with the light extraction hole 41. The light distribution substrate 30 having the opening window 31 is formed, and the space surrounded by the base substrate 20, the light distribution substrate 30, and the light receiving element formation substrate 40 forms the housing recess 2a. Yes. Here, the outer peripheral shapes of the base substrate 20, the light distribution substrate 30, and the light receiving element formation substrate 40 are rectangular, and the light distribution substrate 30 and the light reception element formation substrate 40 are formed to have the same outer dimensions as the base substrate 20. Yes. The thickness dimension of the light receiving element forming substrate 40 is set smaller than the thickness dimension of the base substrate 20 and the light distribution substrate 30. In the present embodiment, the portion of the light receiving element forming substrate 40 that protrudes above the opening window 31 of the light distribution substrate 30 constitutes the above-described protruding portion 2c.

上述のベース基板２０、配光用基板３０、受光素子形成基板４０は、それぞれ、導電形がｎ形で主表面が（１００）面のシリコン基板２０ａ，３０ａ，４０ａを用いて形成してあり、配光用基板３０の内側面が、アルカリ系溶液（例えば、ＴＭＡＨ溶液、ＫＯＨ溶液など）を用いた異方性エッチングにより形成された（１１１）面により構成されており（つまり、配光用基板３０は、開口窓３１の開口面積がベース基板２０から離れるにつれて徐々に大きくなっており）、紫外光ＬＥＤチップ１から放射された光を前方へ反射するミラー２ｄを構成している。   The base substrate 20, the light distribution substrate 30, and the light receiving element formation substrate 40 described above are formed using silicon substrates 20a, 30a, and 40a each having an n-type conductivity and a (100) plane main surface, The inner surface of the light distribution substrate 30 is constituted by a (111) surface formed by anisotropic etching using an alkaline solution (eg, TMAH solution, KOH solution, etc.) (that is, the light distribution substrate). 30 indicates that the opening area of the opening window 31 gradually increases as the distance from the base substrate 20 increases, and constitutes a mirror 2d that reflects light emitted from the ultraviolet LED chip 1 forward.

ベース基板２０は、図４および図５に示すように、シリコン基板２０ａの一表面側（図４（ｃ）における左面側）に、紫外光ＬＥＤチップ１の両電極それぞれと電気的に接続される２つの導体パターン２５ａ，２５ａが形成されるとともに、配光用基板３０に形成された後述の２つの貫通孔配線３４，３４を介して受光素子４と電気的に接続される２つの導体パターン２５ｂ，２５ｂが形成されており、各導体パターン２５ａ，２５ａ，２５ｂ，２５ｂとシリコン基板２０ａの他表面側（図４（ｃ）における右面側）に形成された４つの外部接続用電極２７ａ，２７ａ，２７ｂ，２７ｂとがそれぞれ貫通孔配線２４を介して電気的に接続されている。また、ベース基板２０は、シリコン基板２０ａの上記一表面側に、配光用基板３０と接合するための接合用金属層２９も形成されている。   As shown in FIGS. 4 and 5, the base substrate 20 is electrically connected to each of both electrodes of the ultraviolet LED chip 1 on one surface side (left surface side in FIG. 4C) of the silicon substrate 20 a. Two conductor patterns 25 a and 25 a are formed, and two conductor patterns 25 b electrically connected to the light receiving element 4 through two through-hole wirings 34 and 34 described later formed on the light distribution substrate 30. , 25b, and four external connection electrodes 27a, 27a, 27b formed on the other surface side (the right side in FIG. 4C) of each conductor pattern 25a, 25a, 25b, 25b and the silicon substrate 20a. 27b and 27b are electrically connected through the through-hole wiring 24, respectively. The base substrate 20 is also formed with a bonding metal layer 29 for bonding to the light distribution substrate 30 on the one surface side of the silicon substrate 20a.

本実施形態における紫外光ＬＥＤチップ１は、結晶成長用基板として導電性基板を用い厚み方向の両面に電極（図示せず）が形成された紫外光ＬＥＤチップである。そこで、ベース基板２０は、紫外光ＬＥＤチップ１が電気的に接続される２つの導体パターン２５ａ，２５ａのうちの一方の導体パターン２５ａを、紫外光ＬＥＤチップ１がダイボンディングされる矩形状のダイパッド部２５ａａと、ダイパッド部２５ａａに連続一体に形成され貫通孔配線２４との接続部位となる引き出し配線部２５ａｂとで構成してある。要するに、紫外光ＬＥＤチップ１は、上記一方の導体パターン２５ａのダイパッド部２５ａａにダイボンディングされており、ダイパッド部２５ａａ側の電極がダイパッド部２５ａａに接合されて電気的に接続され、光取り出し面側の電極がボンディングワイヤ１４を介して他方の導体パターン２５ａと電気的に接続されている。   The ultraviolet LED chip 1 in this embodiment is an ultraviolet LED chip in which a conductive substrate is used as a crystal growth substrate and electrodes (not shown) are formed on both surfaces in the thickness direction. Therefore, the base substrate 20 is a rectangular die pad on which one of the two conductor patterns 25a, 25a to which the ultraviolet LED chip 1 is electrically connected is die-bonded to the one of the conductor patterns 25a. Part 25aa and a lead-out wiring part 25ab that is formed continuously and integrally with the die pad part 25aa and serves as a connection part with the through-hole wiring 24. In short, the ultraviolet LED chip 1 is die-bonded to the die pad portion 25aa of the one conductor pattern 25a, and the electrode on the die pad portion 25aa side is joined to and electrically connected to the die pad portion 25aa, and the light extraction surface side The electrode is electrically connected to the other conductor pattern 25a through the bonding wire.

また、ベース基板２０は、シリコン基板２０ａの上記他表面側に、シリコン基板２０ａよりも熱伝導率の高い金属材料からなる矩形状の放熱用パッド部２８が形成されており、ダイパッド部２５ａａと放熱用パッド部２８とがシリコン基板２０ａよりも熱伝導率の高い金属材料（例えば、Ｃｕなど）からなる複数（本実施形態では、９つ）の円柱状のサーマルビア２６を介して熱的に結合されており、紫外光ＬＥＤチップ１で発生した熱が各サーマルビア２６および放熱用パッド部２８を介して放熱されるようになっている。   The base substrate 20 has a rectangular heat radiation pad portion 28 made of a metal material having a higher thermal conductivity than the silicon substrate 20a on the other surface side of the silicon substrate 20a. The pad portion 28 is thermally coupled to a plurality of (in this embodiment, nine) cylindrical thermal vias 26 made of a metal material (for example, Cu) having a higher thermal conductivity than the silicon substrate 20a. The heat generated in the ultraviolet LED chip 1 is dissipated through the thermal vias 26 and the heat dissipating pads 28.

ところで、ベース基板２０は、シリコン基板２０ａに、上述の４つの貫通孔配線２４それぞれが内側に形成される４つの貫通孔２２ａと、上述の９つのサーマルビア２６それぞれが内側に形成される９つの貫通孔２２ｂとが厚み方向に貫設され、シリコン基板２０ａの上記一表面および上記他表面と各貫通孔２２ａ，２２ｂの内面とに跨って熱酸化膜（シリコン酸化膜）からなる絶縁膜２３が形成されており、各導体パターン２５ａ，２５ａ，２５ｂ，２５ｂ、接合用金属層２９、各外部接続用電極２７ａ，２７ａ，２７ｂ，２７ｂ、放熱用パッド部２８、各貫通孔配線２４および各サーマルビア２６がシリコン基板２０ａと電気的に絶縁されている。   By the way, the base substrate 20 is formed on the silicon substrate 20a with four through-holes 22a in which the above-described four through-hole wirings 24 are formed inside and nine above-mentioned nine thermal vias 26 in the inside. A through hole 22b is provided in the thickness direction, and an insulating film 23 made of a thermal oxide film (silicon oxide film) is formed across the one surface and the other surface of the silicon substrate 20a and the inner surfaces of the through holes 22a and 22b. The conductive patterns 25a, 25a, 25b, 25b, the bonding metal layer 29, the external connection electrodes 27a, 27a, 27b, 27b, the heat radiation pad 28, the through-hole wirings 24, and the thermal vias are formed. 26 is electrically insulated from the silicon substrate 20a.

ここにおいて、各導体パターン２５ａ，２５ａ，２５ｂ，２５ｂ、接合用金属層２９、各外部接続用電極２７ａ，２７ａ，２７ｂ，２７ｂ、放熱用パッド部２８は、絶縁膜２３上に形成されたＴｉ膜と当該Ｔｉ膜上に形成されたＡｕ膜との積層膜により構成されており、同時に形成してある。なお、本実施形態では、絶縁膜２３上のＴｉ膜の膜厚を１５〜５０ｎｍ、Ｔｉ膜上のＡｕ膜の膜厚を５００ｎｍに設定してあるが、これらの数値は一例であって特に限定するものではない。また、各Ａｕ膜の材料は、純金に限らず不純物を添加したものでもよい。また、各Ａｕ膜と絶縁膜２３との間に密着性改善用の密着層としてＴｉ膜を介在させてあるが、密着層の材料はＴｉに限らず、例えば、Ｃｒ、Ｎｂ、Ｚｒ、ＴｉＮ、ＴａＮなどでもよい。また、貫通孔配線２４およびサーマルビア２６の材料としては、Ｃｕを採用しているが、Ｃｕに限らず、例えば、Ｎｉ、Ａｌなどを採用してもよい。   Here, each conductor pattern 25a, 25a, 25b, 25b, bonding metal layer 29, each external connection electrode 27a, 27a, 27b, 27b, and heat radiation pad portion 28 are formed on the insulating film 23. And an Au film formed on the Ti film, and are formed at the same time. In this embodiment, the thickness of the Ti film on the insulating film 23 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are only examples and are particularly limited. Not what you want. Further, the material of each Au film is not limited to pure gold, and may be one added with impurities. In addition, although a Ti film is interposed as an adhesion layer for improving adhesion between each Au film and the insulating film 23, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr, TiN, TaN or the like may be used. Further, although Cu is adopted as the material of the through-hole wiring 24 and the thermal via 26, it is not limited to Cu, and for example, Ni, Al, etc. may be adopted.

配光用基板３０は、図６および図７に示すように、シリコン基板３０ａの一表面側（図６（ｃ）における右面側）に、ベース基板２０の２つの導体パターン２７ｂ，２７ｂと接合されて電気的に接続される２つの導体パターン３５，３５が形成されるとともに、ベース基板２０の接合用金属層２９と接合される接合用金属層３６が形成されている。また、配光用基板３０は、シリコン基板３０ａの他表面側（図６（ｃ）における左面側）に、貫通孔配線３４，３４を介して導体パターン３５，３５と電気的に接続される導体パターン３７，３７が形成されるとともに、受光素子形成基板４０と接合するための接合用金属層３８が形成されている。   As shown in FIGS. 6 and 7, the light distribution substrate 30 is bonded to the two conductor patterns 27b and 27b of the base substrate 20 on one surface side (the right surface side in FIG. 6C) of the silicon substrate 30a. Thus, two conductive patterns 35 and 35 that are electrically connected to each other are formed, and a bonding metal layer 36 that is bonded to the bonding metal layer 29 of the base substrate 20 is formed. Further, the light distribution substrate 30 is a conductor that is electrically connected to the conductor patterns 35 and 35 via the through-hole wirings 34 and 34 on the other surface side (the left surface side in FIG. 6C) of the silicon substrate 30a. Patterns 37 and 37 are formed, and a bonding metal layer 38 for bonding to the light receiving element forming substrate 40 is formed.

また、配光用基板３０は、上述の２つの貫通孔配線３４それぞれが内側に形成される２つの貫通孔３２がシリコン基板３０ａの厚み方向に貫設され、シリコン基板３０ａの上記一表面および上記他表面と各貫通孔３２の内面とに跨って熱酸化膜（シリコン酸化膜）からなる絶縁膜３３が形成されており、各導体パターン３５，３５，３７，３７および各接合用金属層３６，３８がシリコン基板３０ａと電気的に絶縁されている。ここにおいて、各導体パターン３５，３５，３７，３７および各接合用金属層３６，３８は、絶縁膜３３上に形成されたＴｉ膜と当該Ｔｉ膜上に形成されたＡｕ膜との積層膜により構成されており、同時に形成してある。なお、本実施形態では、絶縁膜３３上のＴｉ膜の膜厚を１５〜５０ｎｍ、Ｔｉ膜上のＡｕ膜の膜厚を５００ｎｍに設定してあるが、これらの数値は一例であって特に限定するものではない。ここにおいて、各Ａｕ膜の材料は、純金に限らず不純物を添加したものでもよい。また、各Ａｕ膜と絶縁膜３３との間に密着性改善用の密着層としてＴｉ膜を介在させてあるが、密着層の材料はＴｉに限らず、例えば、Ｃｒ、Ｎｂ、Ｚｒ、ＴｉＮ、ＴａＮなどでもよい。また、貫通孔配線３４の材料としては、Ｃｕを採用しているが、Ｃｕに限らず、例えば、Ｎｉ、Ａｌなどを採用してもよい。   Further, the light distribution substrate 30 has two through-holes 32 in which the above-described two through-hole wirings 34 are respectively formed in the thickness direction of the silicon substrate 30a. An insulating film 33 made of a thermal oxide film (silicon oxide film) is formed across the other surface and the inner surface of each through hole 32, and each conductor pattern 35, 35, 37, 37 and each bonding metal layer 36, 38 is electrically insulated from the silicon substrate 30a. Here, each of the conductor patterns 35, 35, 37, 37 and each of the bonding metal layers 36, 38 is a laminated film of a Ti film formed on the insulating film 33 and an Au film formed on the Ti film. Constructed and formed simultaneously. In this embodiment, the thickness of the Ti film on the insulating film 33 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are only examples and are particularly limited. Not what you want. Here, the material of each Au film is not limited to pure gold, and may be added with impurities. Further, although a Ti film is interposed as an adhesion improving layer for adhesion between each Au film and the insulating film 33, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr, TiN, TaN or the like may be used. Further, although Cu is adopted as the material of the through-hole wiring 34, it is not limited to Cu, and for example, Ni, Al or the like may be adopted.

受光素子形成基板４０は、図８および図９に示すように、シリコン基板４０ａの一表面側（図８（ｃ）における右面側）に、配光用基板３０の２つの導体パターン３７，３７と接合されて電気的に接続される２つの導体パターン４７ａ，４７ｂが形成されるとともに、配光用基板３０の接合用金属層３８と接合される接合用金属層４８が形成されている。ここにおいて、受光素子４は、フォトダイオードにより構成されており、受光素子形成基板４０に形成された２つの導体パターン４７ａ，４７ｂの一方の導体パターン４７ａ（図９における上側の導体パターン４７ａ）は、受光素子４を構成するフォトダイオードのｐ形領域４ａに電気的に接続され、他方の導体パターン４７ｂ（図９における下側の導体パターン４７ｂ）は、上記フォトダイオードのｎ形領域４ｂを構成するシリコン基板４０ａに電気的に接続されている。   As shown in FIGS. 8 and 9, the light receiving element formation substrate 40 has two conductor patterns 37, 37 of the light distribution substrate 30 on one surface side (right side in FIG. 8C) of the silicon substrate 40 a. Two conductor patterns 47 a and 47 b that are bonded and electrically connected are formed, and a bonding metal layer 48 that is bonded to the bonding metal layer 38 of the light distribution substrate 30 is formed. Here, the light receiving element 4 is constituted by a photodiode, and one of the two conductor patterns 47a and 47b formed on the light receiving element forming substrate 40 (the upper conductor pattern 47a in FIG. 9) is: The other conductor pattern 47b (lower conductor pattern 47b in FIG. 9) is electrically connected to the p-type region 4a of the photodiode constituting the light receiving element 4, and silicon constituting the n-type region 4b of the photodiode. It is electrically connected to the substrate 40a.

また、受光素子形成基板４０は、シリコン基板４０ａの上記一表面側にシリコン酸化膜からなる絶縁膜４３が形成されており、当該絶縁膜４３がフォトダイオードの反射防止膜を兼ねている。また、受光素子形成基板４０は、上記一方の導体パターン４７ａが、絶縁膜４３に形成したコンタクトホール４３ａを通してｐ形領域４ａと電気的に接続され、上記他方の導体パターン４７ｂが絶縁膜４３に形成したコンタクトホール４３ｂを通してｎ形領域４ｂと電気的に接続されている。ここにおいて、各導体パターン４７ａ，４７ｂおよび接合用金属層４８は、絶縁膜４３上に形成されたＴｉ膜と当該Ｔｉ膜上に形成されたＡｕ膜との積層膜により構成されており、同時に形成してある。なお、本実施形態では、絶縁膜４３上のＴｉ膜の膜厚を１５〜５０ｎｍ、Ｔｉ膜上のＡｕ膜の膜厚を５００ｎｍに設定してあるが、これらの数値は一例であって特に限定するものではない。ここにおいて、各Ａｕ膜の材料は、純金に限らず不純物を添加したものでもよい。また、各Ａｕ膜と絶縁膜４３との間に密着性改善用の密着層としてＴｉ膜を介在させてあるが、密着層の材料はＴｉに限らず、例えば、Ｃｒ、Ｎｂ、Ｚｒ、ＴｉＮ、ＴａＮなどでもよい。   In the light receiving element forming substrate 40, an insulating film 43 made of a silicon oxide film is formed on the one surface side of the silicon substrate 40a, and the insulating film 43 also serves as an antireflection film of the photodiode. In the light receiving element forming substrate 40, the one conductor pattern 47a is electrically connected to the p-type region 4a through the contact hole 43a formed in the insulating film 43, and the other conductor pattern 47b is formed in the insulating film 43. The n-type region 4b is electrically connected through the contact hole 43b. Here, each of the conductor patterns 47a and 47b and the bonding metal layer 48 is composed of a laminated film of a Ti film formed on the insulating film 43 and an Au film formed on the Ti film, and is formed at the same time. It is. In this embodiment, the thickness of the Ti film on the insulating film 43 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are only examples and are particularly limited. Not what you want. Here, the material of each Au film is not limited to pure gold, and may be added with impurities. Further, although a Ti film is interposed as an adhesion improving layer for adhesion between each Au film and the insulating film 43, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr, TiN, TaN or the like may be used.

上述の実装基板２の形成にあたっては、例えば、受光素子４、絶縁膜４３、各導体パターン４７ａ，４７ｂ、および接合用金属層４８が形成されたシリコン基板４０ａと配光用基板３０とを接合する第１の接合工程を行った後、シリコン基板４０ａを所望の厚みまで研磨する研磨工程を行い、その後、誘導結合プラズマ（ＩＣＰ）型のドライエッチング装置などを用いてシリコン基板４０ａに光取出孔４１を形成する光取出孔形成工程を行うことで受光素子形成基板４０を完成させてから、紫外光ＬＥＤチップ１が実装されボンディングワイヤ１４の結線が行われたベース基板２０と配光用基板３０とを接合する第２の接合工程を行うようにすればよい。ここにおいて、第１の接合工程、第２の接合工程では、接合前に互いの接合表面へアルゴンのプラズマ若しくはイオンビーム若しくは原子ビームを真空中で照射して各接合表面の清浄化・活性化を行ってから、接合表面同士を接触させ、常温下で直接接合する常温接合法を採用しているが、常温接合法に限らず、ＡｕＳｎや半田などの低融点共晶材料を用いた接合法を採用してもよい。   In forming the mounting substrate 2 described above, for example, the silicon substrate 40 a on which the light receiving element 4, the insulating film 43, the conductor patterns 47 a and 47 b, and the bonding metal layer 48 are formed and the light distribution substrate 30 are bonded. After performing the first bonding step, a polishing step for polishing the silicon substrate 40a to a desired thickness is performed, and then the light extraction hole 41 is formed in the silicon substrate 40a using an inductively coupled plasma (ICP) type dry etching apparatus or the like. After the light receiving element forming substrate 40 is completed by performing the light extraction hole forming step of forming the base plate 20 and the light distribution substrate 30 on which the ultraviolet LED chip 1 is mounted and the bonding wires 14 are connected. A second bonding step for bonding the layers may be performed. Here, in the first bonding step and the second bonding step, each bonding surface is cleaned and activated by irradiating each bonding surface with argon plasma, ion beam or atomic beam in vacuum before bonding. After joining, the room-temperature bonding method is used in which the bonding surfaces are brought into contact with each other and directly bonded at room temperature. However, not only the room-temperature bonding method but also a bonding method using a low-melting eutectic material such as AuSn or solder. It may be adopted.

上述の第１の接合工程では、シリコン基板４０ａの接合用金属層４８と配光用基板３０の接合用金属層３８とが接合されるとともに、シリコン基板４０ａの導体パターン４７ａ，４７ｂと配光用基板３０の導体パターン３７，３７とが接合され電気的に接続される。ここで、導体パターン４７ａ，４７ｂと導体パターン３７，３７との接合部位は、貫通孔配線３４に重なる領域からずらしてあるので、導体パターン４７ａ，４７ｂと導体パターン３７，３７との互いの接合面の平坦度を高めることができ、特に常温接合法により接合する際の接合歩留まりを高めることができるとともに接合信頼性を高めることができる。また、第２の接合工程では、ベース基板２０の接合用金属層２９と配光用基板３０の接合用金属層３６とが接合されるとともに、ベース基板２０の導体パターン２５ｂ，２５ｂと配光用基板３０の導体パターン３５，３５とが接合され電気的に接続される。ここで、導体パターン２５ｂ，２５ｂと導体パターン３５，３５との接合部位は、貫通孔配線２４に重なる領域および貫通孔配線３４に重なる領域からずらしてあるので、導体パターン２５ｂ，２５ｂと導体パターン３５，３５との互いの接合面の平坦度を高めることができ、特に常温接合法により接合する際の接合歩留まりを高めることができるとともに接合信頼性を高めることができる。   In the first bonding step, the bonding metal layer 48 of the silicon substrate 40a and the bonding metal layer 38 of the light distribution substrate 30 are bonded, and the conductor patterns 47a and 47b of the silicon substrate 40a and the light distribution layer are bonded. The conductor patterns 37 and 37 of the substrate 30 are joined and electrically connected. Here, since the joint portions of the conductor patterns 47a and 47b and the conductor patterns 37 and 37 are shifted from the region overlapping the through-hole wiring 34, the joint surfaces of the conductor patterns 47a and 47b and the conductor patterns 37 and 37 are mutually connected. In particular, it is possible to increase the flatness of the film, and in particular, it is possible to increase the bonding yield when bonding by the room temperature bonding method and to increase the bonding reliability. In the second bonding step, the bonding metal layer 29 of the base substrate 20 and the bonding metal layer 36 of the light distribution substrate 30 are bonded, and the conductor patterns 25b and 25b of the base substrate 20 and the light distribution layer are combined. The conductor patterns 35 and 35 of the substrate 30 are joined and electrically connected. Here, since the joint portions of the conductor patterns 25b and 25b and the conductor patterns 35 and 35 are shifted from the region overlapping the through-hole wiring 24 and the region overlapping the through-hole wiring 34, the conductor patterns 25b and 25b and the conductor pattern 35 are arranged. , 35, the flatness of the joint surfaces can be increased, and in particular, the bonding yield when bonding by the room temperature bonding method can be increased and the bonding reliability can be increased.

また、上述の透光性部材３は、透光性材料（例えば、ガラスなど）により形成された透光性基板からなり、実装基板２と同じ外周形状の矩形板状に形成されており、中央部に、紫外光ＬＥＤチップ１から放射された光を集光する平凸レンズ状の集光レンズ３ａが連続一体に形成されている。   The above-described translucent member 3 is made of a translucent substrate formed of a translucent material (for example, glass) and is formed in a rectangular plate shape having the same outer peripheral shape as the mounting substrate 2. A condensing lens 3a in the form of a plano-convex lens that condenses the light emitted from the ultraviolet LED chip 1 is integrally formed on the part.

本実施形態の紫外光発光装置の製造にあたっては、上述の各シリコン基板２０ａ，３０ａ，４０ａとして、それぞれベース基板２０、配光用基板３０、受光素子形成基板４０を多数形成可能なシリコンウェハを用いるとともに、上述の透光性基板として透光性部材３を多数形成可能なウェハ状のもの（透光性ウェハ）を用い、上述の第１の接合工程、研磨工程、光取出孔形成工程、第２の接合工程、実装基板２の収納凹所２ａに透光性封止材を充填して封止部５を形成する封止部形成工程、封止部形成工程の後で実装基板２と透光性部材３とを接合する第３の接合工程などの各工程をウェハレベルで行うことでウェハレベルパッケージ構造体を形成してから、ダイシング工程により実装基板２のサイズに分割されている。したがって、ベース基板２０と配光用基板３０と受光素子形成基板４０と透光性部材３とが同じ外形サイズとなり、小型のパッケージを実現できるとともに、製造が容易になる。また、配光用基板３０におけるミラー２ｄと受光素子形成基板４０における受光素子４との相対的な位置精度を高めることができ、紫外光ＬＥＤチップ１から放射された紫外光がミラー２ｄにより反射されて受光素子４へ導かれる。   In manufacturing the ultraviolet light emitting device of this embodiment, a silicon wafer capable of forming a large number of the base substrate 20, the light distribution substrate 30, and the light receiving element formation substrate 40 is used as each of the silicon substrates 20a, 30a, and 40a described above. In addition, a wafer-like member (translucent wafer) capable of forming a large number of translucent members 3 as the above-described translucent substrate is used, and the above-described first bonding step, polishing step, light extraction hole forming step, 2 and the sealing substrate forming step for forming the sealing portion 5 by filling the housing recess 2a of the mounting substrate 2 with the translucent sealing material and the sealing portion forming step. The wafer level package structure is formed by performing each process such as a third bonding process for bonding the optical member 3 at the wafer level, and then divided into the size of the mounting substrate 2 by the dicing process. Therefore, the base substrate 20, the light distribution substrate 30, the light receiving element formation substrate 40, and the translucent member 3 have the same outer size, so that a small package can be realized and manufacturing is facilitated. Further, the relative positional accuracy between the mirror 2d in the light distribution substrate 30 and the light receiving element 4 in the light receiving element forming substrate 40 can be increased, and the ultraviolet light emitted from the ultraviolet LED chip 1 is reflected by the mirror 2d. To the light receiving element 4.

ところで、本実施形態の紫外光発光装置は、殺菌用途に利用することを想定して、紫外光ＬＥＤチップ１の発光ピーク波長を２６０ｎｍに設定してあるが、発光ピーク波長は特に限定するものではなく、用途に応じて適宜設定すればよく、例えば、ＵＶ殺菌、検査用光源、ＵＶキュアなど種々の用途に用いることができる。   By the way, the ultraviolet light emitting device of this embodiment is set to 260 nm as the emission peak wavelength of the ultraviolet LED chip 1 assuming that it is used for sterilization applications, but the emission peak wavelength is not particularly limited. However, it may be set as appropriate according to the application, and can be used for various applications such as UV sterilization, a light source for inspection, and UV curing.

以上説明した本実施形態の紫外光発光装置では、紫外光ＬＥＤチップ１を収納するパッケージＡに、紫外光ＬＥＤチップ１から放射された紫外光を検出する受光素子４が設けられているので、パッケージＡあるいは外部（例えば、紫外光発光装置を実装する回路基板など）に受光素子４の出力に基づいて紫外光ＬＥＤチップ１の駆動電流をフィードバック制御する制御部（制御回路部）を設けることにより、紫外光ＬＥＤチップ１の特性劣化や封止部５の透過率の低下などによらず、所望の光量の紫外光を再現性良く得ることが可能になる。また、別途に点灯モニター用の可視光ＬＥＤチップを設けて、受光素子４の出力に基づいて可視光ＬＥＤチップを適宜点灯させることにより、紫外光ＬＥＤチップ１が点灯しているか消灯しているかを視認することが可能となる。ここで、受光素子４の出力が紫外光発光装置の出力として要求される紫外光の所望の光量に応じて予め規定した規定値以上の場合には、可視光ＬＥＤチップを点灯させることで、所望の光量が得られている正常状態にあることを報知するようにし、規定値よりも低く設定した寿命末期判定値以上かつ規定値未満の場合には、可視光ＬＥＤチップを点滅させることで寿命末期状態にあることを報知するようにしてもよい。なお、本実施形態の紫外光発光装置では、パッケージＡを３枚のシリコン基板２０ａ，３０ａ，４０ａを用いて形成してあるので、上述の制御部をＩＣ製造プロセスなどにより製造することでパッケージＡに集積化することができる。   In the ultraviolet light emitting device of the present embodiment described above, the light receiving element 4 that detects the ultraviolet light emitted from the ultraviolet LED chip 1 is provided in the package A that houses the ultraviolet LED chip 1. By providing a control unit (control circuit unit) that feedback-controls the driving current of the ultraviolet LED chip 1 based on the output of the light receiving element 4 on A or outside (for example, a circuit board on which an ultraviolet light emitting device is mounted) Irrespective of deterioration of the characteristics of the ultraviolet LED chip 1 or reduction of the transmittance of the sealing portion 5, it is possible to obtain a desired amount of ultraviolet light with good reproducibility. Further, a visible light LED chip for lighting monitor is separately provided, and the visible light LED chip is appropriately turned on based on the output of the light receiving element 4 to determine whether the ultraviolet light LED chip 1 is turned on or off. Visual recognition is possible. Here, when the output of the light receiving element 4 is equal to or larger than a predetermined value specified in advance according to a desired amount of ultraviolet light required as an output of the ultraviolet light emitting device, the visible light LED chip is turned on, thereby When the end-of-life determination value set lower than the specified value and less than the specified value is notified, the visible light LED chip blinks to indicate the end of life. You may make it alert | report that it exists in a state. In the ultraviolet light emitting device of this embodiment, since the package A is formed using the three silicon substrates 20a, 30a, and 40a, the above-described control unit is manufactured by an IC manufacturing process or the like. Can be integrated.

また、本実施形態の紫外光発光装置は、上述の説明から分かるように、パッケージＡが無機材料により形成されているので、紫外光ＬＥＤチップ１から放射される紫外光によってパッケージＡが劣化するのを抑制することができる。また、本実施形態の紫外光発光装置では、パッケージＡが、ベース基板２０と配光用基板３０と受光素子形成基板４０とで構成されているが、ベース基板２０もしくは受光素子形成基板４０に配光用基板３０に相当する構造を一体に設けてもよく、少なくとも、紫外光ＬＥＤチップ１が搭載されたベース基板２０と、受光素子４が形成された受光素子形成基板４０とを備えていればよく、パッケージＡに受光素子４を容易に且つ位置精度良く形成することが可能となる。   In the ultraviolet light emitting device of this embodiment, as can be seen from the above description, since the package A is formed of an inorganic material, the package A is deteriorated by the ultraviolet light emitted from the ultraviolet LED chip 1. Can be suppressed. In the ultraviolet light emitting device of the present embodiment, the package A is composed of the base substrate 20, the light distribution substrate 30, and the light receiving element forming substrate 40, but is arranged on the base substrate 20 or the light receiving element forming substrate 40. A structure corresponding to the light substrate 30 may be provided integrally, and at least provided with a base substrate 20 on which the ultraviolet LED chip 1 is mounted and a light receiving element forming substrate 40 on which the light receiving element 4 is formed. It is possible to easily form the light receiving element 4 in the package A with high positional accuracy.

また、本実施形態の紫外光発光装置は、パッケージＡ内で紫外光ＬＥＤチップ１を封止した封止部５を備え、当該封止部５が透光性無機材料により形成されているので、紫外光ＬＥＤチップ１から放射される紫外光によって封止部５が劣化するのを抑制することができ、封止部５の劣化に起因した光量低下を抑制することができる。しかも、上記透光性無機材料がガラスなので、封止部５の耐久性を向上させることができる。   Moreover, since the ultraviolet light-emitting device of this embodiment is provided with the sealing part 5 which sealed the ultraviolet LED chip 1 in the package A, and the sealing part 5 is formed of a translucent inorganic material, It can suppress that the sealing part 5 deteriorates by the ultraviolet light radiated | emitted from the ultraviolet light LED chip 1, and can suppress the light quantity fall resulting from deterioration of the sealing part 5. FIG. And since the said translucent inorganic material is glass, durability of the sealing part 5 can be improved.

また、本実施形態の本実施形態の紫外光発光装置では、紫外光ＬＥＤチップ１を収納する収納凹所２ａが一表面に形成され当該収納凹所２ａの内底面に紫外光ＬＥＤチップ１が実装される実装基板２が、収納凹所２ａの周部から内方へ突出する突出部２ｃを有し、当該突出部２ｃに紫外光ＬＥＤチップ１から放射された紫外光を検出する受光素子４が設けられているので、実装基板２の一表面側において収納凹所２ａの周囲に受光素子４を配置するためのスペースを別途に確保する必要がなく、受光素子４を実装基板２に設けながらも小型化が可能になる。また、本実施形態の紫外光発光装置では、透光性部材３に集光レンズ３ａを連続一体に形成してあるので、外部への光取出し効率を高めることができる。   Further, in the ultraviolet light emitting device of this embodiment of the present embodiment, a housing recess 2a for housing the ultraviolet LED chip 1 is formed on one surface, and the ultraviolet LED chip 1 is mounted on the inner bottom surface of the housing recess 2a. The mounted substrate 2 has a protruding portion 2c protruding inward from the peripheral portion of the housing recess 2a, and a light receiving element 4 for detecting the ultraviolet light emitted from the ultraviolet LED chip 1 is provided on the protruding portion 2c. Since it is provided, it is not necessary to separately secure a space for arranging the light receiving element 4 around the housing recess 2a on the one surface side of the mounting substrate 2, and while the light receiving element 4 is provided on the mounting substrate 2 Miniaturization is possible. Further, in the ultraviolet light emitting device of the present embodiment, since the condensing lens 3a is formed continuously and integrally on the translucent member 3, the light extraction efficiency to the outside can be increased.

また、本実施形態では、実装基板２の形成にあたって上述の各接合工程において、低温での直接接合が可能な常温接合法を採用しているので、各接合工程で紫外光ＬＥＤチップ１のジャンクション温度が最大ジャンクション温度を超えるのを防止することができる。   Moreover, in this embodiment, since the room temperature bonding method in which direct bonding at low temperature is possible in each bonding process described above in forming the mounting substrate 2, the junction temperature of the ultraviolet LED chip 1 in each bonding process is adopted. Can be prevented from exceeding the maximum junction temperature.

また、本実施形態の紫外光発光装置では、実装基板２のベース基板２０に紫外光ＬＥＤチップ１と熱結合するサーマルビア２６を設けてあるので、紫外光ＬＥＤチップ１で発生した熱を効率良く外部へ逃がすことができ、紫外光ＬＥＤチップ１のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。   Further, in the ultraviolet light emitting device of this embodiment, the thermal via 26 that is thermally coupled to the ultraviolet LED chip 1 is provided on the base substrate 20 of the mounting substrate 2, so that the heat generated in the ultraviolet LED chip 1 can be efficiently generated. Since it can escape to the outside and the temperature rise of the junction temperature of the ultraviolet LED chip 1 can be suppressed, the input power can be increased and the light output can be increased.

ところで、上述の実施形態では、ベース基板２０、配光用基板３０、受光素子形成基板４０それぞれをシリコン基板２０ａ，３０ａ，４０ａを用いて形成してあるが、シリコン基板２０ａ，３０ａ，４０ａに限らず、半導体基板であればよく、例えば、シリコンカーバイド基板（ＳｉＣ基板）を用いて形成してもよい。また、上述の実施形態では、ベース基板２０と配光用基板３０とで構成される部分を２枚のシリコン基板２０ａ，３０ａを用いて形成してあるが、１枚のシリコン基板を用いて形成してもよい。また、ベース基板２０および配光用基板３０については、必ずしも半導体基板により形成する必要はなく、例えば、金属板などを用いて形成してもよく、シリコン基板２０ａの代わりに、金属板を用いた場合には、紫外光ＬＥＤチップ１で発生した熱をより効率良く放熱させることが可能となる。また、紫外光ＬＥＤチップ１としては、例えば、結晶成長用基板の主表面側に発光層を含む多層構造膜をエピタキシャル成長した後に多層構造膜を支持する導電性基板（例えば、Ｓｉ基板など）を多層構造膜に固着してから、結晶成長用基板などを除去したものを用いてもよい。   In the above-described embodiment, the base substrate 20, the light distribution substrate 30, and the light receiving element formation substrate 40 are formed using the silicon substrates 20a, 30a, and 40a, respectively, but are not limited to the silicon substrates 20a, 30a, and 40a. Instead, any semiconductor substrate may be used. For example, a silicon carbide substrate (SiC substrate) may be used. Further, in the above-described embodiment, the portion composed of the base substrate 20 and the light distribution substrate 30 is formed using the two silicon substrates 20a and 30a, but is formed using one silicon substrate. May be. Further, the base substrate 20 and the light distribution substrate 30 are not necessarily formed of a semiconductor substrate, and may be formed using, for example, a metal plate or the like, and a metal plate is used instead of the silicon substrate 20a. In this case, the heat generated by the ultraviolet LED chip 1 can be radiated more efficiently. Further, as the ultraviolet LED chip 1, for example, a multi-layered conductive substrate (for example, a Si substrate) that supports the multi-layer structure film after epitaxially growing the multi-layer structure film including the light emitting layer on the main surface side of the crystal growth substrate. After fixing to the structure film, a substrate obtained by removing the crystal growth substrate or the like may be used.

また、受光素子形成基板４０は、シリコン基板４０ａなどの半導体基板に限らず、ガラス基板などの透明基板を用いてもよく、この場合には、光取出孔４１は特に設ける必要はなく、フォトダイオードを例えばアモルファスＳｉフォトダイオードにより構成し、実装基板２側とは反対側に外部からの紫外線を反射もしくは吸収して遮光する遮光膜を設ければよい。   The light receiving element forming substrate 40 is not limited to a semiconductor substrate such as a silicon substrate 40a, but may be a transparent substrate such as a glass substrate. In this case, the light extraction hole 41 is not particularly required, and the photodiode May be formed of, for example, an amorphous Si photodiode, and a light-shielding film that reflects or absorbs ultraviolet rays from the outside may be provided on the side opposite to the mounting substrate 2 side.

実施形態の紫外光発光装置の概略断面図である。It is a schematic sectional drawing of the ultraviolet-light-emitting device of embodiment. 同上の紫外光発光装置の概略分解斜視図である。It is a general | schematic disassembled perspective view of an ultraviolet-light-emitting device same as the above. 同上における実装基板を示し、（ａ）は概略平面図、（ｂ）は（ａ）のＢ−Ｂ’概略断面図、（ｃ）は（ａ）のＣ−Ｃ’概略断面図である。The mounting board | substrate in the same as the above is shown, (a) is a schematic plan view, (b) is a schematic cross-sectional view along B-B 'in (a), and (c) is a schematic cross-sectional view along C-C' in (a). 同上におけるベース基板を示し、（ａ）は概略平面図、（ｂ）は（ａ）のＢ−Ｂ’概略断面図、（ｃ）は（ａ）のＣ−Ｃ’概略断面図である。The base board | substrate in the same as the above is shown, (a) is a schematic plan view, (b) is a schematic cross-sectional view along B-B 'in (a), and (c) is a schematic cross-sectional view along C-C' in (a). 同上におけるベース基板の概略下面図である。It is a schematic bottom view of the base substrate in the same as the above. 同上における配光用基板を示し、（ａ）は概略平面図、（ｂ）は（ａ）のＢ−Ｂ’概略断面図、（ｃ）は（ａ）のＣ−Ｃ’概略断面図である。The light distribution board | substrate in the same as the above is shown, (a) is a schematic plan view, (b) is a schematic cross-sectional view along BB 'in (a), and (c) is a schematic cross-sectional view along CC' in (a). . 同上における配光用基板の概略下面図である。It is a schematic bottom view of the substrate for light distribution in the same as the above. 同上における受光素子形成基板を示し、（ａ）は概略平面図、（ｂ）は（ａ）のＢ−Ｂ’概略断面図、（ｃ）は（ａ）のＣ−Ｃ’概略断面図である。The light receiving element formation board in the same as above is shown, (a) is a schematic plan view, (b) is a BB 'schematic sectional view of (a), and (c) is a CC' schematic sectional view of (a). . 同上における受光素子形成基板の概略下面図である。It is a general | schematic bottom view of the light receiving element formation board | substrate in the same as the above. 従来例を示す紫外光発光装置の概略断面図である。It is a schematic sectional drawing of the ultraviolet-light-emitting device which shows a prior art example.

符号の説明Explanation of symbols

１ 紫外光ＬＥＤチップ
２ 実装基板
２ａ 収納凹所
３ 透光性部材
４ 受光素子
５ 封止部
２０ ベース基板
２０ａ シリコン基板
３０ 配光用基板
３０ａ シリコン基板
４０ 受光素子形成基板
４０ａ シリコン基板
Ａ パッケージ DESCRIPTION OF SYMBOLS 1 Ultraviolet LED chip 2 Mounting board 2a Storage recess 3 Translucent member 4 Light receiving element 5 Sealing part 20 Base board 20a Silicon board 30 Light distribution board 30a Silicon board 40 Light receiving element formation board 40a Silicon board A Package

Claims (5)

紫外光を放射する紫外光ＬＥＤチップと、紫外光ＬＥＤチップを収納するパッケージとを備え、パッケージに、紫外光ＬＥＤチップから放射された紫外光を検出する受光素子が設けられてなるものであり、パッケージは、収納凹所が一表面に形成され収納凹所の内底面に紫外光ＬＥＤチップが実装された実装基板と、実装基板の前記一表面側において収納凹所を閉塞する形で実装基板に固着された透光性部材とで構成されており、実装基板に受光素子が設けられており、透光性部材に集光レンズを連続一体に形成してあることを特徴とする紫外発光装置。 And ultraviolet light LED chip which emits ultraviolet light, and a package housing the ultraviolet light LED chip, a package, a light receiving element for detecting the ultraviolet light emitted from ultraviolet LED chips be shall such provided with The package has a mounting substrate in which a housing recess is formed on one surface and an ultraviolet LED chip is mounted on the inner bottom surface of the housing recess, and the mounting substrate is formed by closing the housing recess on the one surface side of the mounting substrate. An ultraviolet light emitting device comprising: a light-receiving element provided on a mounting substrate; and a condensing lens formed continuously on the light-transmitting member. . 前記パッケージは、無機材料により形成されてなることを特徴とする請求項１記載の紫外光発光装置。   The ultraviolet light emitting device according to claim 1, wherein the package is made of an inorganic material. 前記実装基板は、少なくとも、前記無機材料により形成され前記紫外光ＬＥＤチップが搭載されたベース基板と、前記無機材料により形成され前記受光素子が形成された受光素子形成基板とを備えることを特徴とする請求項２記載の紫外光発光装置。 Before Symbol mounting substrate, characterized by comprising at least a base substrate on which the ultraviolet LED chip is formed by the inorganic material is mounted, and a light receiving element formation substrate on which the light receiving element is formed is formed by the inorganic material The ultraviolet light emitting device according to claim 2. 前記パッケージ内で前記紫外光ＬＥＤチップを封止した封止部を備え、当該封止部が透光性無機材料により形成されてなることを特徴とする請求項２または請求項３記載の紫外光発光装置。   4. The ultraviolet light according to claim 2, further comprising: a sealing portion in which the ultraviolet LED chip is sealed in the package, wherein the sealing portion is formed of a translucent inorganic material. Light emitting device. 前記透光性無機材料は、ガラスであることを特徴とする請求項４記載の紫外光発光装置。   The ultraviolet light emitting device according to claim 4, wherein the translucent inorganic material is glass.
JP2008016916A 2008-01-28 2008-01-28 Ultraviolet light emitting device Expired - Fee Related JP5243806B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008016916A JP5243806B2 (en) 2008-01-28 2008-01-28 Ultraviolet light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008016916A JP5243806B2 (en) 2008-01-28 2008-01-28 Ultraviolet light emitting device

Publications (2)

Publication Number Publication Date
JP2009177098A JP2009177098A (en) 2009-08-06
JP5243806B2 true JP5243806B2 (en) 2013-07-24

Family

ID=41031858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008016916A Expired - Fee Related JP5243806B2 (en) 2008-01-28 2008-01-28 Ultraviolet light emitting device

Country Status (1)

Country Link
JP (1) JP5243806B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10865948B2 (en) 2017-07-11 2020-12-15 Ngk Insulators, Ltd. Transparent sealing member
US10988400B2 (en) 2017-08-30 2021-04-27 Ngk Insulators, Ltd. Transparent sealing member
US11121296B2 (en) 2017-06-27 2021-09-14 Ngk Insulators, Ltd. Transparent sealing member having at least one corner portion in curved shape and method for manufacturing same

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5082083B2 (en) * 2010-04-15 2012-11-28 株式会社リキッド・デザイン・システムズ LED lighting device
KR101789825B1 (en) * 2011-04-20 2017-11-20 엘지이노텍 주식회사 The light emitting device package having UV light emitting diode
JP2013042079A (en) * 2011-08-19 2013-02-28 Sharp Corp Semiconductor light emitting device
CN102983245A (en) * 2011-09-06 2013-03-20 青岛杰生电气有限公司 Packaging structure for ultraviolet luminous diode
JP5131668B2 (en) * 2012-07-27 2013-01-30 株式会社リキッド・デザイン・システムズ LED lighting device
JP2014146689A (en) * 2013-01-29 2014-08-14 Panasonic Corp Ultraviolet ray generator
US9887324B2 (en) * 2013-09-16 2018-02-06 Lg Innotek Co., Ltd. Light emitting device package
JP6735072B2 (en) * 2014-11-21 2020-08-05 株式会社Ｓｔｅｑ LED light source device and projector
JP5877487B1 (en) * 2014-12-26 2016-03-08 パナソニックＩｐマネジメント株式会社 Light emitting device
DE112016002190B4 (en) * 2015-05-15 2021-10-07 Panasonic Intellectual Property Management Co., Ltd. Interposer
TWI568972B (en) * 2015-11-25 2017-02-01 綠點高新科技股份有限公司 Lighting apparatus with mirror surface effect and method of manufacturing the same
JP6712855B2 (en) * 2015-12-02 2020-06-24 スタンレー電気株式会社 Ultraviolet light emitting device and ultraviolet irradiation device
DE102016108427A1 (en) 2016-05-06 2017-11-09 Epcos Ag Multi-LED system
KR102330935B1 (en) * 2016-06-01 2021-12-01 신에쯔 세끼에이 가부시키가이샤 Silica glass member for hermetic sealing of ultraviolet smd led element and method for manufacturing quarts glass member for ultraviolet led
JP2017216389A (en) * 2016-06-01 2017-12-07 信越石英株式会社 Silica glass member for hermetic seal of ultraviolet smd type led element
JP6690607B2 (en) * 2016-08-03 2020-04-28 信越化学工業株式会社 Synthetic quartz glass lid and optical element package
JP2018182109A (en) * 2017-04-14 2018-11-15 株式会社Ｕ．Ｎ．デカルト Ultraviolet led driving device
CN108305927A (en) * 2018-03-16 2018-07-20 江苏鸿利国泽光电科技有限公司 A kind of direct insertion deep ultraviolet LED of inorganic encapsulated
KR102559294B1 (en) * 2018-05-28 2023-07-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4414866B2 (en) * 2004-11-19 2010-02-10 九州ナノテック光学株式会社 UV exposure machine
JP4997621B2 (en) * 2005-09-05 2012-08-08 パナソニック株式会社 Semiconductor light emitting device and lighting device using the same
JP2007075149A (en) * 2005-09-09 2007-03-29 Matsushita Electric Works Ltd Sterilizing device for futon mattress
JP2007227433A (en) * 2006-02-21 2007-09-06 Matsushita Electric Works Ltd Light emitting device
JP5192666B2 (en) * 2006-03-28 2013-05-08 パナソニック株式会社 Light emitting device
JP2007311707A (en) * 2006-05-22 2007-11-29 Ushio Inc Ultraviolet ray emitting element package

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11121296B2 (en) 2017-06-27 2021-09-14 Ngk Insulators, Ltd. Transparent sealing member having at least one corner portion in curved shape and method for manufacturing same
DE112018003249B4 (en) 2017-06-27 2023-06-29 Ngk Insulators, Ltd. Transparent encapsulant and method of making same
US10865948B2 (en) 2017-07-11 2020-12-15 Ngk Insulators, Ltd. Transparent sealing member
US10988400B2 (en) 2017-08-30 2021-04-27 Ngk Insulators, Ltd. Transparent sealing member

Also Published As

Publication number Publication date
JP2009177098A (en) 2009-08-06

Similar Documents

Publication Publication Date Title
JP5243806B2 (en) Ultraviolet light emitting device
JP5192666B2 (en) Light emitting device
JP2010135488A (en) Light-emitting device, and method of manufacturing the same
JP5010203B2 (en) Light emitting device
JP5010366B2 (en) Light emitting device
JP5010198B2 (en) Light emitting device
JP4877239B2 (en) Method for manufacturing light emitting device
JP5390938B2 (en) Light emitting device
JP5010199B2 (en) Light emitting device
JP5102652B2 (en) Light emitting device
JP5351624B2 (en) LED module
JP5314269B2 (en) Mounting method and die bonding apparatus
JP5536980B2 (en) Implementation method
US20230067340A1 (en) Light emitting device and method of manufacturing the same
JP2009010048A (en) Light-emitting device
JP2010278316A (en) Light emitting device
JP5554900B2 (en) Chip mounting method
JP5192847B2 (en) Light emitting device
JP2009177099A (en) Light-emitting device
JP5102605B2 (en) Light emitting device and manufacturing method thereof
JP5475954B2 (en) Light emitting device
JP5320169B2 (en) Light emitting device
JP2011009559A (en) Light-emitting device
JP5192667B2 (en) Light emitting device
JP2009177100A (en) Light-emitting device

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100811

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100924

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20120112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120228

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120501

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130312

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130405

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160412

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5243806

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees