JP2010278317A - Light emitting device - Google Patents

Light emitting device Download PDF

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JP2010278317A
JP2010278317A JP2009130781A JP2009130781A JP2010278317A JP 2010278317 A JP2010278317 A JP 2010278317A JP 2009130781 A JP2009130781 A JP 2009130781A JP 2009130781 A JP2009130781 A JP 2009130781A JP 2010278317 A JP2010278317 A JP 2010278317A
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light
substrate
led chip
emitting device
light distribution
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JP5390938B2 (en
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Takumi Taura
巧 田浦
Masao Kirihara
昌男 桐原
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Panasonic Electric Works Co Ltd
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Panasonic Electric Works Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device which has simplified structure and also is made inexpensive although including an optical detection element having a light reception portion receiving a part of light emitted by an LED chip. <P>SOLUTION: The light emitting device includes the LED chip 1, a base substrate 20 formed using a first silicon substrate (first semiconductor substrate) 20a and mounted with the LED chip 1 on one surface side, and a substrate 30 for light distribution formed using a second silicon substrate (second semiconductor substrate) 30a, having an opening window 31 for exposing the LED chip 1, and joined to the one surface side of the base substrate 10. The substrate 30 for light distribution includes the opening window 31 formed in an inversely tapered shape gradually decreasing in opening area as the distance from the base substrate 20 is increased, and the light reception portion 4a of the optical detecting element 4 detecting a part of the light emitted by the LED chip 1 is formed along an inner side face of the opening window 31. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、ＬＥＤチップ（発光ダイオードチップ）を用いた発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

従来から、図５に示すように、ＬＥＤチップ１と、ＬＥＤチップ１を収納するパッケージＡとを備え、ＬＥＤチップ１から放射される光の一部を受光する受光部４ａを有するフォトダイオードからなる光検出素子４がパッケージＡに一体に設けられた発光装置が提案されている（例えば、特許文献１参照）。   Conventionally, as shown in FIG. 5, the LED chip 1 and a package A that houses the LED chip 1 are provided, and the photodiode has a light receiving portion 4 a that receives part of the light emitted from the LED chip 1. A light emitting device in which the light detection element 4 is provided integrally with the package A has been proposed (see, for example, Patent Document 1).

上述のパッケージＡは、ＬＥＤチップ１を収納する収納凹所２ｂ’が一表面に形成されＬＥＤチップ１が実装される実装基板２’と、実装基板２’の上記一表面側で収納凹所２ｂ’を閉塞する形で配設された透光性部材８とで構成され、光検出素子４の受光部４ａが実装基板２’における収納凹所２ｂ’の周部から内方へ突出する突出部２ｃ’に形成されており、収納凹所２ｂ内がＬＥＤチップ１を封止した透光性封止材（例えば、シリコーン樹脂など）からなる封止部５により充実されている。   In the package A, the housing recess 2b ′ for housing the LED chip 1 is formed on one surface, and the mounting substrate 2 ′ on which the LED chip 1 is mounted, and the housing recess 2b on the one surface side of the mounting substrate 2 ′. And a light-transmitting member 8 disposed so as to close the light-receiving portion 4a of the light-detecting element 4 so that the light-receiving portion 4a protrudes inward from the peripheral portion of the housing recess 2b 'on the mounting substrate 2'. The housing recess 2b is filled with a sealing part 5 made of a light-transmitting sealing material (for example, silicone resin) that seals the LED chip 1.

ここにおいて、実装基板２’は、シリコン基板２０ａを用いて形成されＬＥＤチップ１が実装されるベース基板２０と、シリコン基板４０ａを用いて形成され光取出窓４１が形成されるとともに光検出素子４が形成された光検出素子形成基板４０と、シリコン基板３０ａを用いて形成されてなり光取出窓４１に連通する開口窓３１が形成されベース基板２０と光検出素子形成基板４０との間に介在する配光用基板３０とで構成されている。ここで、光検出素子４は、配光用基板３０に形成された貫通孔配線３４およびベース基板２０に形成された貫通孔配線２４を介して外部接続用電極２７ｃ，２７ｄと電気的に接続されている。なお、ＬＥＤチップ１は、ベース基板２０に形成された図示しない貫通孔配線を介して図示しない外部接続用電極と電気的に接続されている。   Here, the mounting substrate 2 ′ is formed using the silicon substrate 20 a and the base substrate 20 on which the LED chip 1 is mounted, the silicon substrate 40 a is formed, the light extraction window 41 is formed, and the light detection element 4. Is formed between the base substrate 20 and the photodetecting element forming substrate 40. The photodetecting element forming substrate 40 is formed with an opening window 31 that is formed using the silicon substrate 30a and communicates with the light extracting window 41. And a light distribution substrate 30. Here, the light detection element 4 is electrically connected to the external connection electrodes 27 c and 27 d through the through-hole wiring 34 formed in the light distribution substrate 30 and the through-hole wiring 24 formed in the base substrate 20. ing. The LED chip 1 is electrically connected to an external connection electrode (not shown) through a through-hole wiring (not shown) formed in the base substrate 20.

上述の図５に示した構成の発光装置では、実装基板２’においてＬＥＤチップ１を収納する収納凹所２ｂ’の周部から内方へ突出する突出部２ｃ’に、ＬＥＤチップ１から放射される光の一部を検出する光検出素子４の受光部４ａが形成されているので、実装基板２’の上記一表面側において収納凹所２ｂ’の周囲に受光部４ａを配置するためのスペースを別途に確保する必要がなく、光検出素子４を実装基板２’に設けながらも平面サイズの小型化が可能になるという利点がある。なお、図５に示した構成の発光装置では、光検出素子形成基板４０の基礎となるシリコン基板４０ａの導電形がｎ形であり、光検出素子４においてＬＥＤチップ１からの光を受光する受光部４ａがｐ形領域により構成されている。   In the light emitting device having the configuration shown in FIG. 5 described above, the LED chip 1 radiates to the projecting portion 2c ′ projecting inward from the peripheral portion of the housing recess 2b ′ that houses the LED chip 1 in the mounting substrate 2 ′. Since the light receiving portion 4a of the light detecting element 4 for detecting a part of the light to be detected is formed, a space for arranging the light receiving portion 4a around the housing recess 2b ′ on the one surface side of the mounting substrate 2 ′. Therefore, there is an advantage that the planar size can be reduced while the photodetecting element 4 is provided on the mounting substrate 2 ′. In the light emitting device having the configuration shown in FIG. 5, the conductivity type of the silicon substrate 40 a serving as the basis of the light detection element forming substrate 40 is n type, and the light detection element 4 receives light from the LED chip 1. The part 4a is constituted by a p-type region.

しかして、例えば、ＬＥＤチップ１として赤色ＬＥＤチップを採用した発光装置と、ＬＥＤチップ１として緑色ＬＥＤチップを採用した発光装置と、ＬＥＤチップ１として青色ＬＥＤチップを採用した発光装置とを同一の回路基板上に近接して配置して、当該回路基板に各発光装置のＬＥＤチップ１を駆動する駆動回路部と、各光検出素子４の出力がそれぞれの目標値に保たれるように駆動回路部から各発光色のＬＥＤチップ１に流れる電流をフィードバック制御する制御回路部などを設けておくことにより、各光検出部４それぞれの出力に基づいて各発光色のＬＥＤチップ１の光出力を各別に制御することができ、各発光色ごとのＬＥＤチップ１の光出力の経時変化の違いなどによらず混色光（ここでは、白色光）の光色や色温度の精度を向上することができる。要するに、所望の混色光を安定して得ることができる。なお、上記特許文献１には、図５に示した構成の発光装置において、透光性部材８に、ＬＥＤチップ１から放射される光（例えば、青色光）によって励起されてＬＥＤチップよりも長波長の光（例えば、黄色光）を放射する蛍光体を含有させておくことにより、ＬＥＤチップ１からの光と蛍光体からの光との混色光（例えば、白色光）を得ることができることも記載されている。   Thus, for example, a light emitting device employing a red LED chip as the LED chip 1, a light emitting device employing a green LED chip as the LED chip 1, and a light emitting device employing a blue LED chip as the LED chip 1 are the same circuit. A driving circuit unit that is arranged close to the substrate and drives the LED chip 1 of each light emitting device on the circuit board, and a driving circuit unit that maintains the output of each photodetecting element 4 at a target value. By providing a control circuit unit that feedback-controls the current flowing from the LED chip 1 of each emission color to the light output of the LED chip 1 of each emission color based on the output of each light detection unit 4 It is possible to control the accuracy of the light color and the color temperature of the mixed color light (here, white light) regardless of the temporal change in the light output of the LED chip 1 for each emission color. It is possible to above. In short, desired mixed color light can be stably obtained. In Patent Document 1, in the light emitting device having the configuration shown in FIG. 5, the translucent member 8 is excited by light (for example, blue light) emitted from the LED chip 1 and is longer than the LED chip. By including a phosphor that emits light of a wavelength (for example, yellow light), it is possible to obtain mixed light (for example, white light) of the light from the LED chip 1 and the light from the phosphor. Are listed.

また、従来から、発光素子から放射される光の一部を検出する光検出素子を備えた光デバイスとして、図６に示すように、シリコン基板１２０ａを用いて形成され一表面側にＬＤチップからなる発光素子１０１および光ファイバ６２が実装された光学基台１２０と、発光素子１０１から放射された光の一部を受光するフォトダイオードチップからなる光検出素子１４０および光学基台１２０が搭載された多層ベース基板１１０とを備えた光モジュールが提案されている（例えば、特許文献２参照）。   Further, as shown in FIG. 6, as an optical device provided with a photodetecting element that detects a part of light emitted from a light emitting element, a silicon substrate 120a is used and an LD chip is formed on one surface side. The optical base 120 on which the light emitting element 101 and the optical fiber 62 to be mounted are mounted, and the light detecting element 140 and the optical base 120 including a photodiode chip that receive a part of the light emitted from the light emitting element 101 are mounted. An optical module including a multilayer base substrate 110 has been proposed (see, for example, Patent Document 2).

ここにおいて、光学基台は、多層ベース基板１１０上の光検出素子１４０に対応する領域に、シリコン基板１２０ａを厚み方向の両側から異方性エッチングすることにより貫通孔１２１が形成されており、発光素子から放射された光の一部を光検出素子１４０の受光面側へ反射するミラー１２３が、貫通孔１２１の傾斜した内側面から当該内側面の法線方向に突出する形で固着されている。なお、図６中の矢印は発光素子１０１から放射された光の光路を示している。   Here, in the optical base, through-holes 121 are formed by anisotropically etching the silicon substrate 120a from both sides in the thickness direction in a region corresponding to the light detection element 140 on the multilayer base substrate 110, and light emission A mirror 123 that reflects a part of the light emitted from the element to the light receiving surface side of the light detecting element 140 is fixed so as to protrude from the inclined inner surface of the through-hole 121 in the normal direction of the inner surface. . Note that the arrows in FIG. 6 indicate the optical path of the light emitted from the light emitting element 101.

特開２００７−２９４８３４号公報JP 2007-294834 A 特開２００５−２５７９１１号公報JP 2005-257911 A

ところで、図５に示した構成の発光装置では、実装基板２’を３枚のシリコン基板（半導体基板）２０ａ，３０ａ，４０ａを用いて形成する必要があり、構造が複雑になってしまうとともにコストが高くなってしまう。   By the way, in the light emitting device having the configuration shown in FIG. 5, it is necessary to form the mounting substrate 2 ′ using three silicon substrates (semiconductor substrates) 20a, 30a, and 40a. Becomes higher.

また、図６に示した構成の光モジュールにおいて、発光素子１０１としてＬＥＤチップを用い、光ファイバ６２をなくして発光装置とすることも考えられるが、発光素子１０１から放射される光の一部を光検出素子１４０に導くためにミラー１２３を設ける必要があり、構造が複雑になってしまうとともにコストが高くなってしまう。また、図６に示した構成では、光検出素子１４０の受光面に外来光が入射しやすく、光検出素子１４０の検出精度の高精度化が難しい。   In addition, in the optical module having the configuration shown in FIG. 6, it is possible to use an LED chip as the light emitting element 101 and eliminate the optical fiber 62 to form a light emitting device, but a part of the light emitted from the light emitting element 101 is used. In order to guide to the light detection element 140, it is necessary to provide the mirror 123, which makes the structure complicated and increases the cost. In the configuration shown in FIG. 6, extraneous light is likely to enter the light receiving surface of the light detection element 140, and it is difficult to increase the detection accuracy of the light detection element 140.

本発明は上記事由に鑑みて為されたものであり、その目的は、ＬＥＤチップから放射される光の一部を受光する受光部を有する光検出素子を備えながらも、構造の簡略化を図れるとともに低コスト化を図れる発光装置を提供することにある。   The present invention has been made in view of the above reasons, and the object thereof is to simplify the structure while including a light detection element having a light receiving portion for receiving a part of light emitted from an LED chip. Another object is to provide a light emitting device capable of reducing the cost.

請求項１の発明は、ＬＥＤチップと、第１の半導体基板を用いて形成され一表面側にＬＥＤチップが実装されたベース基板と、第２の半導体基板を用いて形成されてＬＥＤチップを露出させる開口窓を有しベース基板の上記一表面側に接合された配光用基板とを備え、配光用基板は、開口窓の少なくとも一部がベース基板から離れるにつれて開口面積が徐々に小さくなる逆テーパ状に形成され、ＬＥＤチップから放射される光の一部を検出する光検出素子の受光部が開口窓のうち当該逆テーパ状に形成された部位の内側面に沿って形成されてなることを特徴とする。   According to the first aspect of the present invention, an LED chip, a base substrate formed using a first semiconductor substrate and mounted on one surface side, and a second semiconductor substrate are used to expose the LED chip. And a light distribution substrate bonded to the one surface side of the base substrate. The light distribution substrate has an opening area that gradually decreases as at least a part of the opening window moves away from the base substrate. The light receiving portion of the light detection element that is formed in a reverse taper shape and detects a part of the light emitted from the LED chip is formed along the inner surface of the portion formed in the reverse taper shape in the opening window. It is characterized by that.

この発明によれば、ＬＥＤチップを実装するベース基板が第１の半導体基板を用いて形成され、ＬＥＤチップから放射される光の一部を検出する光検出素子の受光部が第２の半導体基板を用いて形成される配光用基板の開口窓のうち逆テーパ状に形成された部位の内側面に沿って形成されているので、ＬＥＤチップから放射される光の一部を受光する受光部を有する光検出素子を備えながらも、構造の簡略化を図れるとともに低コスト化を図れる。   According to the present invention, the base substrate on which the LED chip is mounted is formed using the first semiconductor substrate, and the light receiving portion of the light detecting element that detects a part of the light emitted from the LED chip is the second semiconductor substrate. A light receiving portion that receives a part of the light emitted from the LED chip because it is formed along the inner surface of the portion of the opening window of the light distribution substrate formed by using the reversely tapered portion In addition, the structure can be simplified and the cost can be reduced.

請求項２の発明は、請求項１の発明において、前記配光用基板の前記開口窓は、前記ベース基板から離れるにつれて開口面積が徐々に小さくなる形状に形成されてなることを特徴とする。   The invention of claim 2 is characterized in that, in the invention of claim 1, the opening window of the light distribution substrate is formed in a shape in which the opening area gradually decreases as the distance from the base substrate increases.

この発明によれば、前記配光用基板の前記開口窓を容易に形成することができる。   According to this invention, the opening window of the light distribution substrate can be easily formed.

請求項３の発明は、請求項１の発明において、前記配光用基板の前記開口窓は、前記配光用基板の厚み方向の両側から中間位置に近づくにつれて開口面積が徐々に大きくなる形状に形成されてなることを特徴とする。   According to a third aspect of the present invention, in the first aspect of the invention, the opening window of the light distribution substrate has a shape in which the opening area gradually increases as it approaches an intermediate position from both sides in the thickness direction of the light distribution substrate. It is formed.

この発明によれば、請求項２の発明に比べて、前記配光用基板の平面視における前記開口窓の占有面積を縮小でき、前記配光用基板および前記ベース基板の小型化が可能となる。また、この発明によれば、前記配光用基板の前記開口窓を形成する際に前記第２の半導体基板の厚み方向の両側からエッチングすることができるので、エッチング時間の短縮を図れる。   According to this invention, compared with the invention of claim 2, the area occupied by the opening window in plan view of the light distribution substrate can be reduced, and the light distribution substrate and the base substrate can be miniaturized. . Further, according to the present invention, when the opening window of the light distribution substrate is formed, etching can be performed from both sides in the thickness direction of the second semiconductor substrate, so that the etching time can be shortened.

請求項４の発明は、請求項１の発明において、前記配光用基板の前記開口窓は、前記配光用基板の厚み方向の両側から中間位置に近づくにつれて開口面積が徐々に小さくなる形状に形成されてなることを特徴とする。   According to a fourth aspect of the present invention, in the first aspect of the invention, the opening window of the light distribution substrate has a shape in which the opening area gradually decreases as it approaches an intermediate position from both sides in the thickness direction of the light distribution substrate. It is formed.

この発明によれば、請求項２の発明に比べて、前記配光用基板の平面視における前記開口窓の占有面積を縮小でき、前記配光用基板および前記ベース基板の小型化が可能となる。また、この発明によれば、前記配光用基板の前記開口窓を形成する際に前記第２の半導体基板の厚み方向の両側からエッチングすることができるので、エッチング時間の短縮を図れる。   According to this invention, compared with the invention of claim 2, the area occupied by the opening window in plan view of the light distribution substrate can be reduced, and the light distribution substrate and the base substrate can be miniaturized. . Further, according to the present invention, when the opening window of the light distribution substrate is formed, etching can be performed from both sides in the thickness direction of the second semiconductor substrate, so that the etching time can be shortened.

請求項５の発明は、請求項１ないし請求項４の発明において、前記第２の半導体基板は、シリコン基板であることを特徴とする。   According to a fifth aspect of the present invention, in the first to fourth aspects of the present invention, the second semiconductor substrate is a silicon substrate.

この発明によれば、前記配光用基板の前記開口窓を、アルカリ系溶液を用いた異方性エッチングにより精度良く形成することができる。   According to this invention, the opening window of the light distribution substrate can be accurately formed by anisotropic etching using an alkaline solution.

請求項６の発明は、請求項１ないし請求項５の発明において、前記光検出素子の前記受光部が前記ＬＥＤチップの鉛直上方に位置していることを特徴とする。   According to a sixth aspect of the present invention, in the first to fifth aspects of the invention, the light receiving portion of the photodetecting element is located vertically above the LED chip.

この発明によれば、前記光検出素子の前記受光部での受光量の増大を図れ、前記光検出素子の検出精度の向上を図れる。   According to this invention, it is possible to increase the amount of light received by the light receiving portion of the light detection element, and to improve the detection accuracy of the light detection element.

請求項１の発明では、ＬＥＤチップから放射される光の一部を受光する受光部を有する光検出素子を備えながらも、構造の簡略化を図れるとともに低コスト化を図れるという効果がある。   According to the first aspect of the present invention, there is an effect that the structure can be simplified and the cost can be reduced while including a light detecting element having a light receiving portion for receiving a part of light emitted from the LED chip.

実施形態１の発光装置を示す概略断面図である。1 is a schematic cross-sectional view showing a light emitting device of Embodiment 1. FIG. 実施形態２の発光装置を示す概略断面図である。6 is a schematic cross-sectional view showing a light emitting device of Embodiment 2. FIG. 実施形態３の発光装置を示す概略断面図である。6 is a schematic cross-sectional view showing a light emitting device according to Embodiment 3. FIG. 実施形態４の発光装置を示す概略断面図である。6 is a schematic cross-sectional view showing a light emitting device according to Embodiment 4. FIG. 従来例の発光装置を示す概略断面図である。It is a schematic sectional drawing which shows the light-emitting device of a prior art example. 他の従来例を示す光モジュールを示す概略断面図である。It is a schematic sectional drawing which shows the optical module which shows another prior art example.

（実施形態１）
以下、本実施形態の発光装置について図１に基づいて説明する。 (Embodiment 1)
Hereinafter, the light emitting device of this embodiment will be described with reference to FIG.

本実施形態の発光装置は、ＬＥＤチップ１と、第１のシリコン基板２０ａを用いて形成され一表面側にＬＥＤチップ１が実装されたベース基板２０と、第２のシリコン基板３０ａを用いて形成されてＬＥＤチップ１を露出させる開口窓３１を有しベース基板１０の上記一表面側に接合された配光用基板３０と、ベース基板２０と配光用基板３０とで囲まれた空間に充填された透光性材料（例えば、シリコーン樹脂など）からなりＬＥＤチップ１および当該ＬＥＤチップ１に接続されたボンディングワイヤ（図示せず）を封止した封止部５とを備えている。ここにおいて、配光用基板３０は、開口窓３１が、ベース基板２０から離れるにつれて開口面積が徐々に小さくなる逆テーパ状に形成され、ＬＥＤチップ１から放射される光の一部を検出する光検出素子４の受光部４ａが開口窓３１の内側面に沿って形成されている。なお、本実施形態では、第１のシリコン基板２０ａが第１の半導体基板を構成し、第２のシリコン基板３０ａが第２の半導体基板を構成している。   The light emitting device of the present embodiment is formed using the LED chip 1 and the first silicon substrate 20a, the base substrate 20 on which the LED chip 1 is mounted on one surface side, and the second silicon substrate 30a. The light distribution substrate 30 having the opening window 31 that exposes the LED chip 1 and bonded to the one surface side of the base substrate 10, and the space surrounded by the base substrate 20 and the light distribution substrate 30 are filled. The LED chip 1 and the sealing part 5 which sealed the bonding wire (not shown) connected to the said LED chip 1 are provided with the translucent material (for example, silicone resin etc.). Here, the light distribution substrate 30 is formed in an inversely tapered shape in which the opening window 31 gradually decreases as the distance from the base substrate 20 increases, so that light for detecting a part of the light emitted from the LED chip 1 is detected. The light receiving portion 4 a of the detection element 4 is formed along the inner side surface of the opening window 31. In the present embodiment, the first silicon substrate 20a constitutes a first semiconductor substrate, and the second silicon substrate 30a constitutes a second semiconductor substrate.

ベース基板２０および配光用基板３０の外周形状は矩形状であり、配光用基板３０はベース基板２０と同じ外形寸法に形成されている。   The outer peripheral shapes of the base substrate 20 and the light distribution substrate 30 are rectangular, and the light distribution substrate 30 is formed to have the same outer dimensions as the base substrate 20.

上述の第１のシリコン基板２０ａおよび第２のシリコン基板３０ａとしては、それぞれ、導電形がｎ形で一表面が（１００）面の単結晶シリコン基板を用いており、配光用基板３０の開口窓３１の内側面が、アルカリ系溶液（例えば、ＴＭＡＨ溶液、ＫＯＨ溶液など）を用いた異方性エッチングにより形成された（１１１）面により構成されている。   As the first silicon substrate 20a and the second silicon substrate 30a described above, single crystal silicon substrates each having an n-type conductivity and a (100) surface are used, and the openings of the light distribution substrate 30 are used. The inner surface of the window 31 is constituted by a (111) surface formed by anisotropic etching using an alkaline solution (for example, TMAH solution, KOH solution, etc.).

ところで、本実施形態の発光装置では、ＬＥＤチップ１として、結晶成長用基板として導電性基板を用い厚み方向の両面に電極（図示せず）が形成された可視光ＬＥＤチップを用いており、光検出素子４をフォトダイオードにより構成している。なお、ＬＥＤチップ１の構造や発光色などは特に限定するものではなく、厚み方向の一面側に両電極が形成されたものでもよいし、紫外線ＬＥＤチップでもよい。   By the way, in the light-emitting device of this embodiment, the LED chip 1 uses a visible light LED chip in which a conductive substrate is used as a crystal growth substrate and electrodes (not shown) are formed on both surfaces in the thickness direction. The detection element 4 is constituted by a photodiode. The structure and emission color of the LED chip 1 are not particularly limited, and both electrodes may be formed on one surface side in the thickness direction, or an ultraviolet LED chip may be used.

ベース基板２０は、第１のシリコン基板２０ａの上記一表面側に、ＬＥＤチップ１の厚み方向の一面側（図１における上面側）の電極が電気的に接続される第１の導体パターン（図示せず）と前記厚み方向の他面側（図１における下面側）の電極が電気的に接続される第２の導体パターン２５ａが形成されるとともに、配光用基板３０に形成された２つの貫通孔配線３４，３４を介して光検出素子４と電気的に接続される第３の導体パターン２５ｃおよび第４の導体パターン２５ｄが形成されている。ここにおいて、ベース基板２０は、ＬＥＤチップ１に電気的に接続された上記第１の導体パターンおよび第２の導体パターン２５ａとシリコン基板２０ａの他表面側に形成された２つの第１の外部接続用電極（図示せず）とがそれぞれ貫通孔配線（図示せず）を介して電気的に接続されており、光検出素子４に電気的に接続された各導体パターン２５ｃ，２５ｄとシリコン基板２０ａの上記他表面側に形成された２つの第２の外部接続用電極２７ｃ，２７ｄとがそれぞれ貫通孔配線２４，２４を介して電気的に接続されている。また、ベース基板２０は、シリコン基板２０ａの上記一表面側に、配光用基板３０と接合するための接合用金属層２９も形成されている。   The base substrate 20 has a first conductor pattern (FIG. 1) in which an electrode on one surface side (upper surface side in FIG. 1) in the thickness direction of the LED chip 1 is electrically connected to the one surface side of the first silicon substrate 20a. (Not shown) and a second conductor pattern 25a electrically connected to the electrode on the other surface side in the thickness direction (the lower surface side in FIG. 1), and two formed on the light distribution substrate 30 A third conductor pattern 25c and a fourth conductor pattern 25d that are electrically connected to the photodetecting element 4 through the through-hole wirings 34 are formed. Here, the base substrate 20 has the first and second conductor patterns 25a and 25a electrically connected to the LED chip 1 and two first external connections formed on the other surface side of the silicon substrate 20a. Electrodes for electrodes (not shown) are electrically connected to each other through through-hole wirings (not shown), and the respective conductor patterns 25c, 25d electrically connected to the light detecting element 4 and the silicon substrate 20a. The two second external connection electrodes 27c and 27d formed on the other surface side are electrically connected through the through-hole wirings 24 and 24, respectively. The base substrate 20 is also formed with a bonding metal layer 29 for bonding to the light distribution substrate 30 on the one surface side of the silicon substrate 20a.

また、ベース基板２０は、ＬＥＤチップ１が電気的に接続される第２の導体パターン２５ａを、ＬＥＤチップ１がダイボンディングされる矩形状のダイパッド部２５ａａと、ダイパッド部２５ａａに連続一体に形成され図示しない上述の貫通孔配線との接続部位となる引き出し配線部（図示せず）とで構成してある。要するに、ＬＥＤチップ１は、第２の導体パターン２５ａのダイパッド部２５ａａにダイボンディングされており、ダイパッド部２５ａａ側の電極がダイパッド部２５ａａに接合されて電気的に接続され、光取り出し面側の電極が上記ボンディングワイヤを介して上記第１の導体パターンと電気的に接続されている。なお、ＬＥＤチップ１は、ダイパッド部２５ａａにＡｕＳｎの共晶接合により接合されているが、ＬＥＤチップ１とダイパッド部２５ａａとの接合方法は共晶接合に限らず、例えばＡｇペーストでもよい。また、ＬＥＤチップ１として厚み方向の上記一面側に両電極が形成されたものを用いる場合には、ＬＥＤチップ１とダイパッド部２５ａａとを樹脂により接着してＬＥＤチップ１の両電極と上記第１の導体パターンおよび第２の導体パターン２５の上記引き出し配線部とをそれぞれボンディングワイヤで電気的に接続するようにしてもよいが、放熱性の観点から、ＬＥＤチップ１とダイパッド部２５ａａとは熱伝導率の高い材料により接合することが好ましい。   In addition, the base substrate 20 is formed by continuously and integrally forming a second conductor pattern 25a to which the LED chip 1 is electrically connected, a rectangular die pad portion 25aa to which the LED chip 1 is die-bonded, and a die pad portion 25aa. A lead-out wiring portion (not shown) serving as a connection portion with the above-described through-hole wiring (not shown) is used. In short, the LED chip 1 is die-bonded to the die pad portion 25aa of the second conductor pattern 25a, and the electrode on the die pad portion 25aa side is joined to and electrically connected to the die pad portion 25aa, and the electrode on the light extraction surface side. Is electrically connected to the first conductor pattern via the bonding wire. The LED chip 1 is bonded to the die pad portion 25aa by AuSn eutectic bonding. However, the bonding method between the LED chip 1 and the die pad portion 25aa is not limited to eutectic bonding, and for example, Ag paste may be used. When the LED chip 1 having both electrodes formed on the one surface side in the thickness direction is used, the LED chip 1 and the die pad portion 25aa are bonded to each other by a resin, and the both electrodes of the LED chip 1 and the first electrode are bonded. However, from the viewpoint of heat dissipation, the LED chip 1 and the die pad portion 25aa are thermally conductive. It is preferable to join with a material having a high rate.

また、ベース基板２０は、第１のシリコン基板２０ａの上記他表面側に、第１のシリコン基板２０ａよりも熱伝導率の高い金属材料からなる矩形状の放熱用パッド部２８が形成されており、ダイパッド部２５ａａと放熱用パッド部２８とが第１のシリコン基板２０ａよりも熱伝導率の高い金属材料（例えば、Ｃｕなど）からなる複数（本実施形態では、９つ）の円柱状のサーマルビア２６を介して熱的に結合されており、ＬＥＤチップ１で発生した熱が各サーマルビア２６および放熱用パッド部２８を介して放熱されるようになっている。   The base substrate 20 has a rectangular heat radiation pad portion 28 made of a metal material having a higher thermal conductivity than the first silicon substrate 20a on the other surface side of the first silicon substrate 20a. The die pad portion 25aa and the heat radiating pad portion 28 are made of a plurality (9 in this embodiment) of columnar thermal materials made of a metal material (for example, Cu) having a higher thermal conductivity than the first silicon substrate 20a. They are thermally coupled via the vias 26 so that the heat generated in the LED chip 1 is dissipated through the thermal vias 26 and the heat dissipation pad portions 28.

ところで、ベース基板２０は、第１のシリコン基板２０ａに、上記第１の導体パターンおよび第２の導体パターン２５ａそれぞれに電気的に接続される上述の図示しない２つ貫通孔配線それぞれが内側に形成される２つの第１の貫通孔（図示せず）と、第３の導体パターン２５ｃおよび第４の導体パターン２５ｄそれぞれに電気的に接続される２つの貫通孔配線２４それぞれが内側に形成される２つの第２の貫通孔２２ａと、上述の９つのサーマルビア２６それぞれが内側に形成される９つ第３の貫通孔２２ｂとが厚み方向に貫設され、第１のシリコン基板２０ａの上記一表面および上記他表面と各第１の貫通孔、各第２の貫通孔２２ａ、各第３の貫通孔２２ｂの内面とに跨って熱酸化膜（シリコン酸化膜）からなる第１の絶縁膜２３が形成されており、上記第１の導体パターン、第２の導体パターン２５ａ、第３の導体パターン２５ｃ、第４の導体パターン２５ｄ、接合用金属層２９、上記各第１の外部接続用電極、第２の各外部接続用電極２７ｃ，２７ｄ、放熱用パッド部２８、上記各第１の貫通孔の内側に形成された上記各貫通孔配線、各第２の貫通孔２２ａの内側に形成された各貫通孔配線２４および各第３の貫通孔２２ｂの内側に形成された各サーマルビア２６が、第１のシリコン基板２０ａと電気的に絶縁されている。   By the way, in the base substrate 20, the two through-hole wirings (not shown) that are electrically connected to the first conductor pattern and the second conductor pattern 25a are formed inside the first silicon substrate 20a, respectively. Two first through holes (not shown) to be formed, and two through hole wirings 24 electrically connected to the third conductor pattern 25c and the fourth conductor pattern 25d, respectively, are formed inside. Two second through-holes 22a and nine third through-holes 22b in which each of the nine thermal vias 26 described above is formed are provided in the thickness direction so that the above-mentioned one of the first silicon substrate 20a. The first insulating film 23 made of a thermal oxide film (silicon oxide film) straddling the surface and the other surface and the inner surfaces of the first through holes, the second through holes 22a, and the third through holes 22b. Formed The first conductor pattern, the second conductor pattern 25a, the third conductor pattern 25c, the fourth conductor pattern 25d, the bonding metal layer 29, the first external connection electrodes, the second External connection electrodes 27c, 27d, heat dissipation pad 28, each through-hole wiring formed inside each first through-hole, and each through-hole formed inside each second through-hole 22a. Each thermal via 26 formed inside the hole wiring 24 and each third through hole 22b is electrically insulated from the first silicon substrate 20a.

ここにおいて、上記第１の導体パターン、第２の導体パターン２５ａ、第３の導体パターン２５ｃ、第４の導体パターン２５ｄ、接合用金属層２９、上記各第１の外部接続用電極、各第２の外部接続用電極２７ｃ，２７ｄ、放熱用パッド部２８は、第１の絶縁膜２３上に形成されたＴｉ膜と当該Ｔｉ膜上に形成されたＡｕ膜との積層膜により構成されている。ここで、ベース基板２０は、第１のシリコン基板２０ａの上記一表面側の上記第１の導体パターン、第２の導体パターン２５ａ、第３の導体パターン２５ｃ、第４の導体パターン２５ｄ、接合用金属層２９が同時に形成され、第１のシリコン基板２０ａの上記他表面側の上記各第１の外部接続用電極、各第２の外部接続用電極２７ｃ，２７ｄ、放熱用パッド部２８が同時に形成されている。なお、本実施形態では、第１の絶縁膜２３上のＴｉ膜の膜厚を１５〜５０ｎｍ、Ｔｉ膜上のＡｕ膜の膜厚を５００ｎｍに設定してあるが、これらの数値は一例であって特に限定するものではない。また、各Ａｕ膜の材料は、純金に限らず不純物を添加したものでもよい。また、各Ａｕ膜と第１の絶縁膜２３との間に密着性改善用の密着層としてＴｉ膜を介在させてあるが、密着層の材料はＴｉに限らず、例えば、Ｃｒ、Ｎｂ、Ｚｒ、ＴｉＮ、ＴａＮなどでもよい。また、図示しない貫通孔配線、貫通孔配線２４およびサーマルビア２６の材料としては、Ｃｕを採用しているが、Ｃｕに限らず、例えば、Ｎｉなどを採用してもよい。   Here, the first conductor pattern, the second conductor pattern 25a, the third conductor pattern 25c, the fourth conductor pattern 25d, the bonding metal layer 29, the first external connection electrodes, the second conductor patterns, respectively. The external connection electrodes 27c and 27d and the heat dissipating pad portion 28 are composed of a laminated film of a Ti film formed on the first insulating film 23 and an Au film formed on the Ti film. Here, the base substrate 20 includes the first conductor pattern, the second conductor pattern 25a, the third conductor pattern 25c, and the fourth conductor pattern 25d on the one surface side of the first silicon substrate 20a. The metal layer 29 is formed at the same time, and the first external connection electrodes, the second external connection electrodes 27c and 27d, and the heat dissipation pad portion 28 on the other surface side of the first silicon substrate 20a are formed at the same time. Has been. In this embodiment, the thickness of the Ti film on the first insulating film 23 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are examples. There is no particular limitation. Further, the material of each Au film is not limited to pure gold, and may be one added with impurities. Further, although a Ti film is interposed as an adhesion layer for improving adhesion between each Au film and the first insulating film 23, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr TiN, TaN, etc. may be used. Further, as a material for the through-hole wiring (not shown), the through-hole wiring 24 and the thermal via 26, Cu is adopted, but not limited to Cu, for example, Ni may be adopted.

配光用基板３０は、第２のシリコン基板３０ａの一表面側に、ベース基板２０の第３の導体パターン２５ｃおよび第４の導体パターン２５ｄそれぞれと接合されて電気的に接続される２つの導体パターン３５ｃ，３５ｄが形成されるとともに、ベース基板２０の接合用金属層２９と接合される接合用金属層３６が形成されている。また、配光用基板３０は、第２のシリコン基板３０ａの他表面側に、貫通孔配線３４，３４を介して上記一表面側の導体パターン３５ｃ，３５ｄと電気的に接続される導体パターン３７ｃ，３７ｄが形成されている。   The light distribution substrate 30 has two conductors that are joined and electrically connected to the third conductor pattern 25c and the fourth conductor pattern 25d of the base substrate 20 on one surface side of the second silicon substrate 30a. The patterns 35c and 35d are formed, and the bonding metal layer 36 bonded to the bonding metal layer 29 of the base substrate 20 is formed. Further, the light distribution substrate 30 is provided on the other surface side of the second silicon substrate 30a with a conductor pattern 37c electrically connected to the conductor patterns 35c and 35d on the one surface side through the through-hole wirings 34 and 34. , 37d.

また、配光用基板３０は、上述の２つの貫通孔配線３４それぞれが内側に形成される２つの貫通孔３２が第２のシリコン基板３０ａの厚み方向に貫設され、第２のシリコン基板３０ａの上記一表面および上記他表面と各貫通孔３２の内面とに跨って熱酸化膜（シリコン酸化膜）からなる第２の絶縁膜３３が形成されており、各導体パターン３５ｃ，３５ｄ，３７ｃ，３７ｄおよび接合用金属層３６が、第２のシリコン基板３０ａと電気的に絶縁されている。ここにおいて、各導体パターン３５ｃ，３５ｄ，３７ｃ，３７ｄおよび接合用金属層３６は、第２の絶縁膜３３上に形成されたＴｉ膜と当該Ｔｉ膜上に形成されたＡｕ膜との積層膜により構成されている。ここで、配光用基板３０は、第２のシリコン基板３０ａの上記一表面側の導体パターン３５ｃ，３５ｄ、接合用金属層３６が同時に形成され、第２のシリコン基板３０ａの上記他表面側の導体パターン３７ｃ，３７ｄが同時に形成されている。なお、本実施形態では、第２の絶縁膜３３上のＴｉ膜の膜厚を１５〜５０ｎｍ、Ｔｉ膜上のＡｕ膜の膜厚を５００ｎｍに設定してあるが、これらの数値は一例であって特に限定するものではない。ここにおいて、各Ａｕ膜の材料は、純金に限らず不純物を添加したものでもよい。また、各Ａｕ膜と第２の絶縁膜３３との間に密着性改善用の密着層としてＴｉ膜を介在させてあるが、密着層の材料はＴｉに限らず、例えば、Ｃｒ、Ｎｂ、Ｚｒ、ＴｉＮ、ＴａＮなどでもよい。また、貫通孔配線３４の材料としては、Ｃｕを採用しているが、Ｃｕに限らず、例えば、Ｎｉなどを採用してもよい。   Further, in the light distribution substrate 30, two through holes 32 in which the above-described two through hole wirings 34 are respectively formed are penetrated in the thickness direction of the second silicon substrate 30a, and the second silicon substrate 30a. A second insulating film 33 made of a thermal oxide film (silicon oxide film) is formed so as to straddle the one surface and the other surface and the inner surface of each through-hole 32, and each conductor pattern 35c, 35d, 37c, 37d and the bonding metal layer 36 are electrically insulated from the second silicon substrate 30a. Here, each of the conductor patterns 35c, 35d, 37c, 37d and the bonding metal layer 36 is a laminated film of a Ti film formed on the second insulating film 33 and an Au film formed on the Ti film. It is configured. Here, in the light distribution substrate 30, the conductor patterns 35c, 35d on the one surface side of the second silicon substrate 30a and the bonding metal layer 36 are formed at the same time, and the other surface side of the second silicon substrate 30a is formed. Conductive patterns 37c and 37d are formed simultaneously. In this embodiment, the thickness of the Ti film on the second insulating film 33 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are only examples. There is no particular limitation. Here, the material of each Au film is not limited to pure gold, and may be added with impurities. In addition, although a Ti film is interposed as an adhesion layer for improving adhesion between each Au film and the second insulating film 33, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr TiN, TaN, etc. may be used. Moreover, although Cu is adopted as the material of the through-hole wiring 34, it is not limited to Cu, and for example, Ni may be adopted.

ところで、配光用基板３０は、上述のように、開口窓３１が、ベース基板１０から離れるにつれて開口面積が徐々に小さくなる逆テーパ状に形成され、ＬＥＤチップ１から放射される光の一部を検出するフォトダイオードからなる光検出素子４の受光部４ａが開口窓３１の内側面に沿って形成されている。ここにおいて、配光用基板３０の基礎となる第２のシリコン基板３０ａとしては、導電形がｎ形で抵抗率が１０Ωｃｍ程度の単結晶シリコン基板を用いており、第２のシリコン基板３０ａの厚さ寸法は、ＬＥＤセンサ１の厚さ寸法よりも大きく設定してある。   By the way, as described above, the light distribution substrate 30 is formed in a reverse tapered shape in which the opening window 31 gradually decreases as the distance from the base substrate 10 increases, and a part of the light emitted from the LED chip 1 is formed. A light receiving portion 4 a of the light detecting element 4 made of a photodiode for detecting the light is formed along the inner surface of the opening window 31. Here, as the second silicon substrate 30a serving as the basis of the light distribution substrate 30, a single crystal silicon substrate having an n-type conductivity and a resistivity of about 10 Ωcm is used. The thickness of the second silicon substrate 30a The size is set larger than the thickness of the LED sensor 1.

また、光検出素子４は、フォトダイオードの高濃度のｐ形領域を構成する受光部４ａが、第２のシリコン基板３０ａの上記他表面側に形成された２つの導体パターン３７ｃ，３７ｄの一方の導体パターン３７ｃと電気的に接続され、フォトダイオードのｎ形領域４ｂを構成する第２のシリコン基板３０ａが、他方の導体パターン３７ｄと電気的に接続されている。ここにおいて、受光部４ａを構成するｐ形領域は、第２のシリコン基板３０ａにおける当該ｐ形領域の形成予定領域に第２のシリコン基板３０ａの上記他表面側からｐ形不純物（例えば、ボロンなど）のイオン注入を行った後に、酸化炉内でドライブを行うことにより当該ｐ形領域を形成する。ここで、受光部４ａを構成するｐ形領域は、第２のシリコン基板３０ａの上記他表面側からｐ形不純物を拡散させるので、配光用基板３０の逆テーパ状の開口窓３１の内側面における第２のシリコン基板３０ａの上記他表面の近傍の部位（つまり、第２のシリコン基板３０ａの開口窓３１の周部であって断面が鋭角となっている頂点の近傍部位）に受光面が位置するように設ける。なお、第２のシリコン基板３０ａの抵抗率の値は一例であって特に限定するものではない。また、第２のシリコン基板３０ａの導電形をｐ形として受光部４ａの導電形をｎ形としてもよい。   Further, in the light detection element 4, the light receiving portion 4a constituting the high-concentration p-type region of the photodiode is one of the two conductor patterns 37c and 37d formed on the other surface side of the second silicon substrate 30a. The second silicon substrate 30a that is electrically connected to the conductor pattern 37c and forms the n-type region 4b of the photodiode is electrically connected to the other conductor pattern 37d. Here, the p-type region constituting the light-receiving portion 4a is a p-type impurity (for example, boron or the like) from the other surface side of the second silicon substrate 30a to the formation region of the p-type region in the second silicon substrate 30a. ) Ion implantation and then driving in an oxidation furnace to form the p-type region. Here, since the p-type region constituting the light receiving portion 4a diffuses p-type impurities from the other surface side of the second silicon substrate 30a, the inner surface of the reverse tapered opening window 31 of the light distribution substrate 30 is used. In the second silicon substrate 30a, the light receiving surface is located in the vicinity of the other surface (that is, the peripheral portion of the opening window 31 of the second silicon substrate 30a and the vicinity of the apex where the section has an acute angle). Provide to be located. Note that the resistivity value of the second silicon substrate 30a is an example and is not particularly limited. The conductivity type of the second silicon substrate 30a may be p-type, and the conductivity type of the light receiving portion 4a may be n-type.

また、配光用基板３０の開口窓３１は、第２のシリコン基板３０ａを上記一表面側から、アルカリ系溶液（例えば、ＴＭＡＨ溶液、ＫＯＨ溶液など）を用いて異方性エッチングすることにより形成されており、ベース基板２０から離れるにつれて開口面積が徐々に小さくなる逆テーパ状に形成されている。ここにおいて、光検出素子４の受光部４ａは、第２のシリコン基板３０ａの上記他表面側で開口窓３１の内側面に沿って形成されている。   The opening window 31 of the light distribution substrate 30 is formed by anisotropically etching the second silicon substrate 30a from the one surface side using an alkaline solution (eg, TMAH solution, KOH solution, etc.). The opening area is gradually reduced as the distance from the base substrate 20 increases. Here, the light receiving portion 4a of the light detecting element 4 is formed along the inner surface of the opening window 31 on the other surface side of the second silicon substrate 30a.

また、上述の封止部５の透光性材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、エポキシ樹脂、ポリカーボネート樹脂、ガラスなどを採用してもよい。   Moreover, the translucent material of the above-mentioned sealing part 5 is not limited to a silicone resin, and for example, an acrylic resin, an epoxy resin, a polycarbonate resin, glass, or the like may be employed.

本実施形態の発光装置の製造にあたっては、ＬＥＤチップ１を実装したベース基板２０と光検出素子４が形成された配光用基板３０とを低温での直接接合が可能な常温接合法などにより接合する接合工程を行った後、封止部５を形成する封止部形成工程を行うようにすればよい。常温接合法では、接合前に互いの接合表面へアルゴンのプラズマ若しくはイオンビーム若しくは原子ビームを真空中で照射して各接合表面の清浄化・活性化を行ってから、接合表面同士を接触させ、常温下で直接接合する。また、本実施形態の発光装置の製造にあたっては、上述の接合工程において、低温での直接接合が可能な常温接合法を採用しているので、接合工程でＬＥＤチップ１のジャンクション温度が最大ジャンクション温度を超えるのを防止することができ、ＬＥＤチップに熱ダメージが生じるのを防止することができる。また、接合後にベース基板２０および配光用基板３０にひずみが発生することを防止することができるので、ベース基板２０のひずみに起因した応力がＬＥＤチップ１に発生するのを防止することができる。なお、上述の接合工程で採用している常温接合法では、各接合表面の清浄化・活性化を行ってから、常温下で適宜の荷重を印加しいているが、常温下に限らず、例えば、光検出素子４およびＬＥＤチップ１へ熱ダメージが生じない温度（光検出素子４およびＬＥＤチップ１それぞれのジャンクション温度が最大ジャンクション温度を超えない温度）であれば、加熱条件下（例えば、８０℃〜１００℃程度に加熱した条件下）において適宜の荷重を印加するようにしてもよく、加熱条件下において適宜の荷重を印加して接合することで、接合信頼性をより一層高めることが可能となる。   In manufacturing the light emitting device according to the present embodiment, the base substrate 20 on which the LED chip 1 is mounted and the light distribution substrate 30 on which the light detection element 4 is formed are bonded by a room temperature bonding method or the like that can be directly bonded at a low temperature. What is necessary is just to make it perform the sealing part formation process which forms the sealing part 5, after performing the joining process to perform. In the room temperature bonding method, each bonding surface is irradiated with argon plasma or ion beam or atomic beam in vacuum before bonding to clean and activate each bonding surface, and then the bonding surfaces are brought into contact with each other. Join directly at room temperature. Further, in the manufacture of the light emitting device of the present embodiment, the room temperature bonding method capable of direct bonding at a low temperature is employed in the above-described bonding process, so that the junction temperature of the LED chip 1 is the maximum junction temperature in the bonding process. Can be prevented, and thermal damage to the LED chip can be prevented. Moreover, since it can prevent that the distortion | strain generate | occur | produces in the base substrate 20 and the light distribution board | substrate 30 after joining, it can prevent that the stress resulting from the distortion | strain of the base substrate 20 generate | occur | produces in the LED chip 1. . In addition, in the room temperature bonding method adopted in the above-described bonding process, an appropriate load is applied at room temperature after cleaning and activation of each bonding surface, but not limited to room temperature, for example, If the temperature does not cause thermal damage to the light detection element 4 and the LED chip 1 (the junction temperature of each of the light detection element 4 and the LED chip 1 does not exceed the maximum junction temperature), the heating condition (for example, 80 ° C.) It is possible to apply an appropriate load under a condition of heating to about 100 ° C., and to apply the appropriate load under the heating condition to perform bonding, thereby further improving the bonding reliability. Become.

上述の接合工程では、ベース基板２０の接合用金属層２９と配光用基板３０の接合用金属層３６とが接合されるとともに、ベース基板２０の第３の導体パターン２５ｃおよび第４の導体パターン２５ｄと配光用基板３０の導体パターン３５ｃ，３５ｄとが接合され電気的に接続される。ここで、ベース基板２０側の各導体パターン２５ｃ，２５ｄと配光用基板３０側の各導体パターン３５ｃ，３５ｄとの接合部位は、貫通孔配線３４に重なる領域からずらしてあるので、各導体パターン２５ｃ，２５ｄと各導体パターン３５ｃ，３５ｄとの互いの接合面の平坦度を高めることができ、接合歩留まりを高めることができるとともに接合信頼性を高めることができる。   In the bonding step described above, the bonding metal layer 29 of the base substrate 20 and the bonding metal layer 36 of the light distribution substrate 30 are bonded, and the third conductor pattern 25c and the fourth conductor pattern of the base substrate 20 are bonded. 25d and the conductor patterns 35c and 35d of the light distribution board 30 are joined and electrically connected. Here, since the joint portions of the conductor patterns 25c and 25d on the base substrate 20 side and the conductor patterns 35c and 35d on the light distribution substrate 30 side are shifted from the region overlapping the through-hole wiring 34, each conductor pattern The flatness of the joint surfaces of 25c and 25d and the respective conductor patterns 35c and 35d can be increased, so that the junction yield can be increased and the junction reliability can be increased.

ところで、本実施形態の発光装置の製造にあたっては、上述の各シリコン基板２０ａ，３０ａとして、それぞれベース基板２０、配光用基板３０を多数形成可能なウェハ状のもの（シリコンウェハ）を用い、上述の接合工程、封止部形成工程などの各工程をウェハレベルで行うことでウェハレベルパッケージ構造体を形成してから、ダイシング工程により発光装置のサイズに分割されている。したがって、ベース基板２０と配光用基板３０とが同じ外形サイズとなり、小型のチップパッケージを実現できるとともに、製造が容易になる。   By the way, in manufacturing the light emitting device of the present embodiment, a wafer-like one (silicon wafer) capable of forming a large number of base substrates 20 and light distribution substrates 30 is used as the silicon substrates 20a and 30a. The wafer level package structure is formed by performing each process such as the bonding process and the sealing part forming process at the wafer level, and then divided into the size of the light emitting device by the dicing process. Therefore, the base substrate 20 and the light distribution substrate 30 have the same outer size, so that a small chip package can be realized and manufacturing is facilitated.

以上説明した本実施形態の発光装置では、ＬＥＤチップ１を実装するベース基板２０が第１のシリコン基板２０ａを用いて形成され、ＬＥＤチップ１から放射される光の一部を検出する光検出素子４の受光部４ａが第２のシリコン基板３０ａを用いて形成される配光用基板３０の開口窓３１のうち逆テーパ状に形成された部位（ここでは、全部）の内側面に沿って形成されているので、ＬＥＤチップ１から放射される光の一部を受光する受光部４ａを有する光検出素子４を備えながらも、構造の簡略化を図れるとともに低コスト化を図れる。また、本実施形態の発光装置では、ＬＥＤチップ１から斜め方向（ＬＥＤチップ１の光軸とは交差する方向）へ放射された光の一部を開口窓３１の内側面で反射させることなく受光部４ａへ直接入射させることができるので、光検出素子４の受光量の増大による検出精度の向上を図れる。また、本実施形態の発光装置では、配光用基板３０の逆テーパ状の開口窓３１の内側面に沿って受光部４ａの受光面が形成されているので、受光部４ａの受光面が第２のシリコン基板３０ａの上記他表面に平行な場合（つまり、ＬＥＤチップ１の光軸に直交する平面上に受光部４ａの受光面がある場合）に比べて、ＬＥＤチップ１から斜め方向へ放射された光が受光部４ａに入りやすくなり、光検出素子４の検出精度の向上を図れる。   In the light emitting device of this embodiment described above, the base substrate 20 on which the LED chip 1 is mounted is formed using the first silicon substrate 20a, and the light detection element detects a part of the light emitted from the LED chip 1. The four light receiving portions 4a are formed along the inner surface of the reversely tapered portion (here, all) of the opening window 31 of the light distribution substrate 30 formed by using the second silicon substrate 30a. Therefore, the structure can be simplified and the cost can be reduced while the photodetector 4 having the light receiving portion 4a for receiving a part of the light emitted from the LED chip 1 is provided. In the light emitting device of the present embodiment, a part of the light emitted from the LED chip 1 in an oblique direction (a direction intersecting the optical axis of the LED chip 1) is received without being reflected by the inner surface of the opening window 31. Since the light can be directly incident on the portion 4a, the detection accuracy can be improved by increasing the amount of light received by the light detection element 4. Further, in the light emitting device of this embodiment, the light receiving surface of the light receiving unit 4a is formed along the inner surface of the reverse tapered opening window 31 of the light distribution substrate 30, so that the light receiving surface of the light receiving unit 4a is the first light receiving surface. Compared with the case where the second silicon substrate 30a is parallel to the other surface (that is, when the light receiving surface of the light receiving portion 4a is on a plane perpendicular to the optical axis of the LED chip 1), the LED chip 1 emits in an oblique direction. Thus, the detected light can easily enter the light receiving portion 4a, and the detection accuracy of the light detection element 4 can be improved.

また、本実施形態の発光装置では、配光用基板３０の開口窓３１が、ベース基板２０から離れるにつれて開口面積が徐々に小さくなる形状に形成されているので、配光用基板３０の開口窓３１を容易に形成することができる。また、本実施形態の発光装置では、配光用基板３０の基礎となる第２の半導体基板として第２のシリコン基板３０ａを用いているので、配光用基板３０の開口窓３１を、アルカリ系溶液を用いた異方性エッチングにより精度良く形成することができる。つまり、配光用基板３０の開口窓３１を、エッチング速度の結晶面方位依存性を利用した異方性エッチングにより形成することができる。   Further, in the light emitting device of this embodiment, the opening window 31 of the light distribution substrate 30 is formed in a shape in which the opening area gradually decreases as the distance from the base substrate 20 increases. 31 can be formed easily. In the light emitting device of this embodiment, since the second silicon substrate 30a is used as the second semiconductor substrate that is the basis of the light distribution substrate 30, the opening window 31 of the light distribution substrate 30 is made alkaline. It can be formed with high accuracy by anisotropic etching using a solution. That is, the opening window 31 of the light distribution substrate 30 can be formed by anisotropic etching utilizing the crystal plane orientation dependence of the etching rate.

また、本実施形態の発光装置は、配光用基板３０に光検出素子４が設けられているので、例えば、ＬＥＤチップ１として赤色ＬＥＤチップを採用した発光装置と、ＬＥＤチップ１として緑色ＬＥＤチップを採用した発光装置と、ＬＥＤチップ１として青色ＬＥＤチップを採用した発光装置とを同一の配線基板（回路基板）上に近接して配置して、当該配線基板に各発光装置のＬＥＤチップ１を駆動する駆動回路部と、各光検出素子４の出力がそれぞれの目標値に保たれるように駆動回路部から各発光色のＬＥＤチップ１に流れる電流をフィードバック制御する制御回路部などを設けておくことにより、各光検出素子４それぞれの出力に基づいて各発光色のＬＥＤチップ１の光出力を各別に制御することができ、各発光色ごとのＬＥＤチップ１の光出力の経時変化の違いなどによらず混色光（ここでは、白色光）の光色や色温度の精度を向上することができる。要するに、所望の混色光を安定して得ることができる。   Moreover, since the light detection device 4 is provided on the light distribution substrate 30 in the light emitting device of this embodiment, for example, a light emitting device employing a red LED chip as the LED chip 1 and a green LED chip as the LED chip 1. And a light emitting device adopting a blue LED chip as the LED chip 1 are arranged close to each other on the same wiring board (circuit board), and the LED chip 1 of each light emitting device is placed on the wiring board. A drive circuit unit for driving, a control circuit unit for feedback controlling the current flowing from the drive circuit unit to the LED chip 1 of each emission color so that the output of each photodetecting element 4 is maintained at the respective target value, and the like are provided. Accordingly, the light output of the LED chip 1 of each emission color can be controlled separately based on the output of each of the light detection elements 4, and the LED chip 1 for each emission color can be controlled. The light output of the difference such as to depend not mixed color light of aging (here, white light) can improve the accuracy of the light color and color temperature. In short, desired mixed color light can be stably obtained.

（実施形態２）
本実施形態の発光装置の基本構成は実施形態１と略同じであって、図２に示すように、配光用基板３０の開口窓３１の形状が相違している。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 2)
The basic configuration of the light emitting device of this embodiment is substantially the same as that of the first embodiment, and the shape of the opening window 31 of the light distribution substrate 30 is different as shown in FIG. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

本実施形態における配光用基板３０の開口窓３１は、配光用基板３０の厚み方向の両側から中間位置に近づくにつれて開口面積が徐々に大きくなる形状に形成されている。ここにおいて、配光用基板３０の開口窓３１は、第２の半導体基板である第２のシリコン基板３０ａを厚み方向の両側から、アルカリ系溶液を用いて異方性エッチングすることにより形成してあり、内側面が（１１１）により構成されている。   The opening window 31 of the light distribution substrate 30 in this embodiment is formed in a shape in which the opening area gradually increases as it approaches the intermediate position from both sides in the thickness direction of the light distribution substrate 30. Here, the opening window 31 of the light distribution substrate 30 is formed by anisotropically etching the second silicon substrate 30a, which is the second semiconductor substrate, from both sides in the thickness direction using an alkaline solution. Yes, the inner surface is constituted by (111).

ここにおいて、配光用基板３０の開口窓３１は、ベース基板２０に近い側が順テーパ状に形成され、ベース基板２０から遠い側が逆テーパ状に形成されており、光検出素子４の受光部４ａは、配光用基板３０の開口窓３１のうち当該逆テーパ状に形成された部位の内側面に沿って形成されている。   Here, the opening window 31 of the light distribution substrate 30 is formed in a forward tapered shape on the side close to the base substrate 20 and is formed in a reverse tapered shape on the side far from the base substrate 20, and the light receiving portion 4 a of the light detection element 4. Is formed along the inner surface of the portion of the opening window 31 of the light distribution substrate 30 that is formed in the reverse tapered shape.

しかして、本実施形態の発光装置では、実施形態１に比べて、配光用基板３０ベース基板２０から遠い側における開口窓３１の開口面積を変えることなく、配光用基板３０の平面視における開口窓３１の占有面積を縮小でき、配光用基板３０およびベース基板２０の小型化が可能となる。また、本実施形態の発光装置では、配光用基板３０の開口窓３１を形成する際に第２のシリコン基板３０ａの厚み方向の両側からエッチングすることができるので、エッチング時間の短縮を図れる。また、本実施形態の発光装置では、配光用基板３０の開口窓３１のうちベース基板２０から遠く且つ逆テーパ状に形成された部位の内側面に沿って受光部４ａの受光面が形成されているので、受光部４ａの受光面が第２のシリコン基板３０ａの上記他表面に平行な場合（つまり、ＬＥＤチップ１の光軸に直交する平面上に受光部４ａの受光面がある場合）に比べて、ＬＥＤチップ１から斜め方向へ放射された光が受光部４ａに入りやすくなり、光検出素子４の検出精度の向上を図れる。   Therefore, in the light emitting device of the present embodiment, the light distribution substrate 30 in a plan view can be obtained without changing the opening area of the opening window 31 on the side far from the light distribution substrate 30 base substrate 20 as compared with the first embodiment. The area occupied by the opening window 31 can be reduced, and the light distribution substrate 30 and the base substrate 20 can be downsized. Further, in the light emitting device of this embodiment, the etching time can be shortened because etching can be performed from both sides in the thickness direction of the second silicon substrate 30a when the opening window 31 of the light distribution substrate 30 is formed. Further, in the light emitting device of the present embodiment, the light receiving surface of the light receiving unit 4a is formed along the inner surface of the portion of the opening window 31 of the light distribution substrate 30 that is far from the base substrate 20 and formed in an inversely tapered shape. Therefore, when the light receiving surface of the light receiving unit 4a is parallel to the other surface of the second silicon substrate 30a (that is, when the light receiving surface of the light receiving unit 4a is on a plane orthogonal to the optical axis of the LED chip 1). As compared with the above, light emitted in an oblique direction from the LED chip 1 can easily enter the light receiving portion 4a, and the detection accuracy of the light detection element 4 can be improved.

（実施形態３）
本実施形態の発光装置の基本構成は実施形態１と略同じであって、図３に示すように、配光用基板３０の開口窓３１の形状や、光検出素子４の受光部４ａの形成位置などが相違する。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 3)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the first embodiment. As shown in FIG. 3, the shape of the opening window 31 of the light distribution substrate 30 and the formation of the light receiving portion 4 a of the light detecting element 4. The position is different. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

本実施形態における配光用基板３０の開口窓３１は、配光用基板３０の厚み方向の両側から中間位置に近づくにつれて開口面積が徐々に小さくなる形状に形成されている。ここにおいて、配光用基板３０の開口窓３１は、第２の半導体基板である第２のシリコン基板３０ａを厚み方向の両側から、アルカリ系溶液を用いて異方性エッチングすることにより形成してあり、内側面が（１１１）により構成されている。   The opening window 31 of the light distribution substrate 30 in the present embodiment is formed in a shape in which the opening area gradually decreases as it approaches the intermediate position from both sides in the thickness direction of the light distribution substrate 30. Here, the opening window 31 of the light distribution substrate 30 is formed by anisotropically etching the second silicon substrate 30a, which is the second semiconductor substrate, from both sides in the thickness direction using an alkaline solution. Yes, the inner surface is constituted by (111).

ここにおいて、配光用基板３０の開口窓３１は、ベース基板２０に近い側が逆テーパ状に形成され、ベース基板２０から遠い側が順テーパ状に形成されており、光検出素子４の受光部４ａは、配光用基板３０の開口窓３１のうち当該逆テーパ状に形成された部位の内側面に沿って形成されている。   Here, the opening window 31 of the light distribution substrate 30 is formed in a reverse tapered shape on the side close to the base substrate 20, and is formed in a forward tapered shape on the side far from the base substrate 20, and the light receiving portion 4 a of the light detection element 4. Is formed along the inner surface of the portion of the opening window 31 of the light distribution substrate 30 that is formed in the reverse tapered shape.

また、本実施形態における配光用基板３０は、実施形態１で説明した貫通孔配線３４，３４（図１参照）および導体パターン３７ｃ，３７ｄ（図１参照）を設けておらず、第２のシリコン基板３０ａの上記一表面側の導体パターン３５ｃ，３５ｄを開口窓３１の内側面に沿って延長して光検出素子４に電気的に接続してある。   Further, the light distribution substrate 30 in the present embodiment does not include the through-hole wirings 34 and 34 (see FIG. 1) and the conductor patterns 37c and 37d (see FIG. 1) described in the first embodiment, and the second The conductor patterns 35c and 35d on the one surface side of the silicon substrate 30a are extended along the inner surface of the opening window 31 and are electrically connected to the light detecting element 4.

しかして、本実施形態の発光装置では、実施形態１に比べて、配光用基板３０をベース基板２０から遠い側における開口窓３１の開口面積を変えることなく、配光用基板３０の平面視における開口窓３１の占有面積を縮小でき、配光用基板３０およびベース基板２０の小型化が可能となる。また、本実施形態の発光装置では、配光用基板３０の開口窓３１を形成する際に第２のシリコン基板３０ａの厚み方向の両側からエッチングすることができるので、エッチング時間の短縮を図れる。また、本実施形態の発光装置では、配光用基板３０の開口窓３１のうちベース基板２０に近く且つ逆テーパ状に形成された部位の内側面に沿って受光部４ａの受光面が形成されているので、受光部４ａの受光面が第２のシリコン基板３０ａの上記他表面に平行な場合（つまり、ＬＥＤチップ１の光軸に直交する平面上に受光部４ａの受光面がある場合）に比べて、ＬＥＤチップ１から斜め方向へ放射された光が受光部４ａに入りやすくなり、光検出素子４の検出精度の向上を図れる。   Therefore, in the light emitting device according to the present embodiment, the light distribution substrate 30 is seen in plan view without changing the opening area of the opening window 31 on the side farther from the base substrate 20 than in the first embodiment. The area occupied by the opening window 31 can be reduced, and the light distribution substrate 30 and the base substrate 20 can be downsized. Further, in the light emitting device of this embodiment, the etching time can be shortened because etching can be performed from both sides in the thickness direction of the second silicon substrate 30a when the opening window 31 of the light distribution substrate 30 is formed. Further, in the light emitting device of the present embodiment, the light receiving surface of the light receiving unit 4a is formed along the inner surface of the portion of the opening window 31 of the light distribution substrate 30 that is close to the base substrate 20 and formed in an inversely tapered shape. Therefore, when the light receiving surface of the light receiving unit 4a is parallel to the other surface of the second silicon substrate 30a (that is, when the light receiving surface of the light receiving unit 4a is on a plane orthogonal to the optical axis of the LED chip 1). As compared with the above, light emitted in an oblique direction from the LED chip 1 can easily enter the light receiving portion 4a, and the detection accuracy of the light detection element 4 can be improved.

（実施形態４）
本実施形態の発光装置の基本構成は実施形態１と略同じであって、図４に示すように、実施形態１に比べて開口窓３１の開口面積が小さく設定されており、光検出素子４の受光部４ａがＬＥＤチップ１の鉛直上方に位置している点などが相違する。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 4)
The basic configuration of the light emitting device of this embodiment is substantially the same as that of the first embodiment. As shown in FIG. 4, the opening area of the opening window 31 is set smaller than that of the first embodiment. The light receiving portion 4a is located vertically above the LED chip 1 and the like. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

本実施形態の発光装置では、光検出素子４の受光部４ａでの受光量の増大を図れ、光検出素子４の検出精度の向上を図れる。また、本実施形態の発光装置では、実施形態１の発光装置に比べて、狭角配光を得ることができるとともに、小型化を図れる。   In the light emitting device of this embodiment, the amount of light received by the light receiving unit 4a of the light detection element 4 can be increased, and the detection accuracy of the light detection element 4 can be improved. In addition, the light emitting device of this embodiment can obtain a narrow-angle light distribution and can be downsized as compared with the light emitting device of the first embodiment.

なお、実施形態２や実施形態３において、光検出素子４の受光部４ａがＬＥＤチップ１の鉛直上方に位置するように開口窓３１の開口面積を設定してもよい。   In the second and third embodiments, the opening area of the opening window 31 may be set so that the light receiving unit 4a of the light detection element 4 is positioned vertically above the LED chip 1.

ところで、上記各実施形態の発光装置では、ベース基板２０の上記他表面側に上記各第１の外部接続用電極および各第２の外部接続用電極２７ｃ，２７ｄ、放熱用パッド部２８を設けてあるが、これらを設けずに、例えば、ベース基板２０の上記一表面側に、ＬＥＤチップ１および光検出素子４それぞれと電気的に接続された複数のパッドを設けて、配光用基板３０に、各パッドそれぞれを露出させる複数の切欠部を設けるようにしてもよい。   By the way, in the light emitting device of each of the above embodiments, the first external connection electrodes, the second external connection electrodes 27c and 27d, and the heat dissipation pad portion 28 are provided on the other surface side of the base substrate 20. However, without providing them, for example, a plurality of pads electrically connected to the LED chip 1 and the light detection element 4 are provided on the one surface side of the base substrate 20, and the light distribution substrate 30 is provided. A plurality of notches for exposing each pad may be provided.

また、上記各実施形態において、封止部５を、ＬＥＤチップ１から放射される光によって励起されてＬＥＤチップ１よりも長波長の光を放射する蛍光体（図示せず）を含有した透光性材料（例えば、シリコーン樹脂、アクリル樹脂、エポキシ樹脂、ポリカーボネート樹脂、ガラス、有機成分と無機成分とがｎｍレベルもしくは分子レベルで混合、結合した有機・無機ハイブリッド材料など）により形成してもよい。例えば、ＬＥＤチップ１として青色の光を放射するＬＥＤチップを用い、上述の蛍光体として、ＬＥＤチップ１から放射された青色の光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体を採用すれば、ＬＥＤチップ１から放射された青色の光と黄色蛍光体から放射された光とが封止部５から出射されることとなり、白色光を得ることができる。なお、封止部５の透光性材料としてガラスを採用すれば、シリコーン樹脂などの有機材料を採用している場合に比べて、封止部５の熱伝導性が向上するので、蛍光体の温度上昇を抑制できて蛍光体の温度消光による量子効率の低下を抑制することができ、しかも、水蒸気やＮＯｘなど対するガスバリア性や耐透湿性が向上するとともに、蛍光体の吸湿劣化を抑制でき、信頼性および耐久性が向上する。また、封止部５の材料として用いる透光性材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができ、赤色蛍光体と緑色蛍光体とを用いれば演色性を高めることができる。 Further, in each of the above embodiments, the sealing portion 5 is light-transmitting containing a phosphor (not shown) that emits light having a longer wavelength than the LED chip 1 when excited by the light emitted from the LED chip 1. It may be formed of a functional material (for example, an organic / inorganic hybrid material in which an organic component and an inorganic component are mixed and bonded at the nm level or the molecular level), such as a silicone resin, an acrylic resin, an epoxy resin, a polycarbonate resin, glass. For example, an LED chip that emits blue light is used as the LED chip 1, and a particulate yellow that emits broad yellow light when excited by the blue light emitted from the LED chip 1 is used as the phosphor described above. If the phosphor is employed, the blue light emitted from the LED chip 1 and the light emitted from the yellow phosphor are emitted from the sealing portion 5, and white light can be obtained. If glass is used as the translucent material of the sealing portion 5, the thermal conductivity of the sealing portion 5 is improved as compared with the case where an organic material such as silicone resin is used. it becomes possible to suppress the temperature rise can be suppressed decrease in quantum efficiency due to the temperature quenching of phosphor, moreover, with improved gas barrier properties and moisture impermeability against water vapor and NO x, can suppress moisture absorption deterioration of the phosphor , Improve reliability and durability. Further, the phosphor mixed with the translucent material used as the material of the sealing portion 5 is not limited to the yellow phosphor, and for example, white light can be obtained by mixing the red phosphor and the green phosphor. If a red phosphor and a green phosphor are used, color rendering can be improved.

１ ＬＥＤチップ
４ 光検出素子
４ａ 受光部
２０ ベース基板
２０ａ 第１のシリコン基板（第１の半導体基板）
３０ 配光用基板
３０ａ 第２のシリコン基板（第２の半導体基板）
３１ 開口窓 DESCRIPTION OF SYMBOLS 1 LED chip 4 Photodetection element 4a Light-receiving part 20 Base substrate 20a 1st silicon substrate (1st semiconductor substrate)
30 Light distribution substrate 30a Second silicon substrate (second semiconductor substrate)
31 Open window

Claims (6)

ＬＥＤチップと、第１の半導体基板を用いて形成され一表面側にＬＥＤチップが実装されたベース基板と、第２の半導体基板を用いて形成されてＬＥＤチップを露出させる開口窓を有しベース基板の上記一表面側に接合された配光用基板とを備え、配光用基板は、開口窓の少なくとも一部がベース基板から離れるにつれて開口面積が徐々に小さくなる逆テーパ状に形成され、ＬＥＤチップから放射される光の一部を検出する光検出素子の受光部が開口窓のうち当該逆テーパ状に形成された部位の内側面に沿って形成されてなることを特徴とする発光装置。   An LED chip, a base substrate formed using a first semiconductor substrate and having an LED chip mounted on one surface side, and a base plate formed using a second semiconductor substrate and exposing the LED chip. A light distribution substrate bonded to the one surface side of the substrate, and the light distribution substrate is formed in an inversely tapered shape in which the opening area gradually decreases as at least a part of the opening window moves away from the base substrate, A light-emitting device, wherein a light-receiving portion of a light-detecting element that detects a part of light emitted from an LED chip is formed along an inner surface of a portion of the opening window that is formed in an inversely tapered shape. . 前記配光用基板の前記開口窓は、前記ベース基板から離れるにつれて開口面積が徐々に小さくなる形状に形成されてなることを特徴とする請求項１記載の発光装置。   2. The light emitting device according to claim 1, wherein the opening window of the light distribution substrate is formed in a shape in which the opening area gradually decreases as the distance from the base substrate increases. 前記配光用基板の前記開口窓は、前記配光用基板の厚み方向の両側から中間位置に近づくにつれて開口面積が徐々に大きくなる形状に形成されてなることを特徴とする請求項１記載の発光装置。   The said opening window of the said light distribution board | substrate is formed in the shape where an opening area becomes large gradually as it approaches an intermediate | middle position from the both sides of the thickness direction of the said light distribution board | substrate. Light emitting device. 前記配光用基板の前記開口窓は、前記配光用基板の厚み方向の両側から中間位置に近づくにつれて開口面積が徐々に小さくなる形状に形成されてなることを特徴とする請求項１記載の発光装置。   The said opening window of the said light distribution board | substrate is formed in the shape where an opening area becomes gradually small as it approaches an intermediate position from the both sides of the thickness direction of the said light distribution board | substrate. Light emitting device. 前記第２の半導体基板は、シリコン基板であることを特徴とする請求項１ないし請求項４のいずれか１項に記載の発光装置。   The light emitting device according to claim 1, wherein the second semiconductor substrate is a silicon substrate. 前記光検出素子の前記受光部が前記ＬＥＤチップの鉛直上方に位置していることを特徴とする請求項１ないし請求項５のいずれか１項に記載の発光装置。   6. The light emitting device according to claim 1, wherein the light receiving portion of the light detection element is positioned vertically above the LED chip.
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