TW201401541A - Light source-integrated optical sensor - Google Patents
Light source-integrated optical sensor Download PDFInfo
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- TW201401541A TW201401541A TW102121883A TW102121883A TW201401541A TW 201401541 A TW201401541 A TW 201401541A TW 102121883 A TW102121883 A TW 102121883A TW 102121883 A TW102121883 A TW 102121883A TW 201401541 A TW201401541 A TW 201401541A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
- G01S7/4813—Housing arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Abstract
Description
本發明係關於一種光源一體型光感測器。 The present invention relates to a light source integrated type photosensor.
已知有利用透明樹脂覆蓋設在基板上之發光晶片及受光晶片、於發光晶片與受光晶片之間之透明樹脂設置槽、在該槽填充有遮光樹脂之光源一體型光感測器(參照專利文獻1)。 A light-emitting chip and a light-receiving wafer which are provided on a substrate by a transparent resin, a transparent resin-providing groove between the light-emitting chip and the light-receiving wafer, and a light source-integrated light sensor in which the light-shielding resin is filled in the groove are known (refer to the patent) Document 1).
專利文獻1：日本特開2005-340727號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2005-340727
於習知技術中，由於發光晶片產生之熱之影響，會有受光晶片上之透明樹脂之表面之平坦形狀受損而變形、或者變質或變色之虞。受光晶片上之透明樹脂之表面之變形或變色會導致受光感度之降低等受光特性之劣化。 In the prior art, due to the influence of heat generated by the light-emitting wafer, the flat shape of the surface of the transparent resin on the light-receiving wafer may be damaged, deformed, or deteriorated or discolored. The deformation or discoloration of the surface of the transparent resin on the light-receiving wafer causes deterioration of the light-receiving characteristics such as a decrease in the light-sensing sensitivity.
本發明第1態樣之光源一體型光感測器，具備：受光元件，設置於基板上之既定區域，且以第1透光樹脂密封；發光元件，設置於基板上之與受光元件不同之區域，且以第2透光樹脂密封；第1遮光部，覆蓋第1透光樹脂之周圍；第2遮光部，覆蓋第2透光樹脂之周圍；空間，設置於第1遮光部及第2遮光部之間；第1遮光散熱構件，覆蓋第1透光樹脂之上面，在受光元件上具有開口部；以及第2遮光散熱構件，覆蓋第2透光樹脂之上面，在發光元件上具有開口部。 A light source-integrated photosensor according to a first aspect of the present invention includes: a light receiving element provided in a predetermined region on a substrate and sealed by a first light transmitting resin; and a light emitting element disposed on the substrate different from the light receiving element The region is sealed with the second light-transmissive resin; the first light-shielding portion covers the periphery of the first light-transmissive resin; the second light-shielding portion covers the periphery of the second light-transmissive resin; and the space is provided in the first light-shielding portion and the second light-shielding portion The first light-blocking heat-dissipating member covers the upper surface of the first light-transmitting resin and has an opening on the light-receiving element, and the second light-blocking heat-dissipating member covers the upper surface of the second light-transmitting resin and has an opening in the light-emitting element. unit.
根據本發明之第2態樣，較佳為於第1態樣之光源一體型光感測器中，第1遮光散熱構件及第2遮光散熱構件係以積層有有機材料層及金屬層之 平面構件構成。 According to a second aspect of the present invention, in the light source-integrated photosensor according to the first aspect, the first light-blocking heat-dissipating member and the second light-blocking heat-dissipating member are laminated with an organic material layer and a metal layer. The planar member is constructed.
根據本發明之第3態樣，較佳為於第2態樣之光源一體型光感測器中，第1遮光散熱構件及第2遮光散熱構件，有機材料層在上部露出。 According to a third aspect of the present invention, in the light source-integrated photosensor according to the second aspect, the first light-blocking heat-dissipating member and the second light-blocking heat-dissipating member are preferably exposed to the upper portion of the organic material layer.
本發明第4態樣之光源一體型光感測器，具備：受光部，設置於基板上之既定區域；發光部，設置於基板上之與受光部不同之區域；第1透光構件，於受光部上以覆蓋該受光部之方式設置；第2透光構件，於發光部上以覆蓋該發光部之方式設置；遮光構件，設置於第1透光構件與第2透光構件之間；空間，設置於第1透光構件與第2透光構件之間；以及散熱構件，與第1透光構件、第2透光構件及遮光構件分別相接。 A light source-integrated photosensor according to a fourth aspect of the present invention includes: a light receiving portion provided in a predetermined region on the substrate; and a light emitting portion disposed on a substrate different from the light receiving portion; and the first light transmitting member The light receiving portion is disposed to cover the light receiving portion; the second light transmitting member is disposed to cover the light emitting portion on the light emitting portion; and the light shielding member is disposed between the first light transmitting member and the second light transmitting member; The space is provided between the first light transmitting member and the second light transmitting member, and the heat radiating member is in contact with the first light transmitting member, the second light transmitting member, and the light blocking member.
根據本發明之第5態樣，較佳為於第4態樣之光源一體型光感測器中，散熱構件係以平面構件構成，該平面構件，在與發光部及受光部對應之位置具有開口，從上相接第1透光構件、第2透光構件及遮光構件形成之面。 According to a fifth aspect of the present invention, in the light source-integrated photosensor of the fourth aspect, the heat dissipating member is formed of a planar member having a position corresponding to the light emitting portion and the light receiving portion. The opening is connected to the surface formed by the first light transmitting member, the second light transmitting member, and the light blocking member.
根據本發明之第6態樣，較佳為於第4或第5態樣之光源一體型光感測器中，進一步具備替代遮光構件或沿著遮光構件分別相接於基板與散熱構件之熱傳導構件。 According to a sixth aspect of the present invention, preferably, in the light source-integrated photosensor of the fourth or fifth aspect, the heat conduction is further provided in place of the light shielding member or the heat conduction between the substrate and the heat dissipation member. member.
根據本發明之第7態樣，較佳為於第6態樣之光源一體型光感測器中，熱傳導構件相接於設在基板之貫通孔。 According to a seventh aspect of the invention, preferably, in the light source-integrated photosensor of the sixth aspect, the heat conducting member is in contact with the through hole provided in the substrate.
根據本發明之第8態樣，較佳為於第4態樣之光源一體型光感測器中，散熱構件由包圍基板周圍且具有熱傳導性之第2遮光構件構成。 According to an eighth aspect of the present invention, in the light source-integrated photosensor of the fourth aspect, the heat dissipating member is configured by a second light blocking member that surrounds the substrate and has thermal conductivity.
根據本發明之第9態樣，較佳為於第8態樣之光源一體型光感測器中，散熱構件進一步包含平面構件，該平面構件，在與發光部及受光部對應之位置具有開口，從上相接第1透光構件、第2透光構件及第2遮光構件形成之面。 According to a ninth aspect of the present invention, in the light source-integrated photosensor of the eighth aspect, the heat dissipating member further includes a planar member having an opening at a position corresponding to the light emitting portion and the light receiving portion. The surface on which the first light transmitting member, the second light transmitting member, and the second light blocking member are formed is connected to each other.
根據本發明之第10態樣，較佳為於第9態樣之光源一體型光感測器中，進一步具備分別相接於基板與平面構件之熱傳導構件。 According to a tenth aspect of the present invention, in the light source-integrated photosensor of the ninth aspect, the heat conduction member that is in contact with the substrate and the planar member is further provided.
根據本發明之第11態樣，較佳為於第10態樣之光源一體型光感測器中，熱傳導構件相接於設在基板之貫通孔。 According to an eleventh aspect of the present invention, preferably, in the light source-integrated photosensor of the tenth aspect, the heat conduction member is in contact with the through hole provided in the substrate.
於本發明之光源一體型光感測器，可抑制由來自發光部之熱所引起之特性劣化。 In the light source-integrated photosensor of the present invention, deterioration of characteristics caused by heat from the light-emitting portion can be suppressed.
L‧‧‧切斷部位 L‧‧‧ cut parts
1、1B、1C、1D、1E、2‧‧‧光源一體型光感測器 1, 1B, 1C, 1D, 1E, 2‧‧‧ light source integrated light sensor
10、10B、10C‧‧‧基板 10, 10B, 10C‧‧‧ substrate
11、12、13、14‧‧‧圖案 11, 12, 13, 14 ‧ ‧ patterns
15、16‧‧‧貫通孔 15, 16‧‧‧through holes
17‧‧‧下表面側圖案 17‧‧‧ Lower surface side pattern
20‧‧‧受光晶片 20‧‧‧Lighted wafer
21、22、31‧‧‧接合線 21, 22, 31‧‧‧ bonding wires
30‧‧‧發光晶片 30‧‧‧Lighting chip
41、41A、41B‧‧‧透明樹脂 41, 41A, 41B‧‧‧ transparent resin
45‧‧‧散熱板 45‧‧‧heat plate
45A、45B‧‧‧開口 45A, 45B‧‧‧ openings
51、51A、51B、51C、51D‧‧‧不透明樹脂 51, 51A, 51B, 51C, 51D‧‧‧ opaque resin
52‧‧‧遮光膜 52‧‧‧Shade film
60‧‧‧空間 60‧‧‧ space
70‧‧‧金屬板 70‧‧‧Metal plates
圖1係第一實施形態之光源一體型光感測器之圖，圖1(a)為俯視圖，圖1(b)為剖面圖。 Fig. 1 is a view showing a light source-integrated photosensor according to a first embodiment, wherein Fig. 1(a) is a plan view and Fig. 1(b) is a cross-sectional view.
圖2(a)、圖2(b)、圖2(c)、圖2(d)係對光源一體型光感測器之製造方法進行說明之圖。 2(a), 2(b), 2(c), and 2(d) are views for explaining a method of manufacturing a light source-integrated photosensor.
圖3係變形例1之光源一體型光感測器之剖面圖。 Fig. 3 is a cross-sectional view showing a light source-integrated photosensor according to Modification 1.
圖4係變形例2之光源一體型光感測器之剖面圖。 4 is a cross-sectional view showing a light source-integrated photosensor according to Modification 2.
圖5係變形例3之光源一體型光感測器之剖面圖。 Fig. 5 is a cross-sectional view showing a light source-integrated photosensor according to a third modification.
圖6係變形例4之光源一體型光感測器之剖面圖。 Fig. 6 is a cross-sectional view showing a light source-integrated photosensor according to a fourth modification.
圖7係第二實施形態之光源一體型光感測器之圖，圖7(a)為俯視圖，圖7(b)為剖面圖。 Fig. 7 is a view showing a light source-integrated photosensor according to a second embodiment, Fig. 7(a) is a plan view, and Fig. 7(b) is a cross-sectional view.
圖8(a)係切割加工後之俯視圖，圖8(b)係剖面圖。 Fig. 8(a) is a plan view after cutting, and Fig. 8(b) is a cross-sectional view.
圖9(a)係在槽填充有不透明樹脂之圖，圖9(b)係藉由空間使不透明樹脂分離後之圖。 Fig. 9(a) is a view in which a groove is filled with an opaque resin, and Fig. 9(b) is a view in which an opaque resin is separated by a space.
圖10係說明感測器之切斷及分片化之圖。 Figure 10 is a diagram illustrating the cutting and singulation of the sensor.
圖11係第三實施形態之光源一體型光感測器之剖面圖。 Figure 11 is a cross-sectional view showing a light source-integrated photosensor according to a third embodiment.
以下，參照圖式對用以實施本發明之形態進行說明。 Hereinafter, embodiments for carrying out the invention will be described with reference to the drawings.
本實施形態，藉由高效率地使在發光晶片產生之熱散熱，使熱不影響 受光晶片上之透明樹脂。圖1係例示本發明之第一實施形態之光源一體型光感測器1之圖。圖1(a)係光源一體型光感測器1之俯視圖，圖1(b)係圖1(a)中光源一體型光感測器1之E-E’剖面圖。光源一體型光感測器1係將發光元件及受光元件在基板10上一體地構成者，例如可用於如下用途等，即，從開口45B射出發光元件發出之光，根據受光元件是否接收從開口45A射入之由外部對象物反射之反射光而判定是否存在外部對象物。 In this embodiment, heat generated in the light-emitting wafer is efficiently dissipated, so that heat is not affected. A transparent resin on a light-receiving wafer. Fig. 1 is a view showing a light source-integrated photosensor 1 according to a first embodiment of the present invention. Fig. 1(a) is a plan view of a light source-integrated photosensor 1, and Fig. 1(b) is a cross-sectional view taken along line E-E' of the light source-integrated photosensor 1 of Fig. 1(a). The light source-integrated photosensor 1 is configured such that the light-emitting element and the light-receiving element are integrally formed on the substrate 10, and can be used, for example, for emitting light emitted from the light-emitting element from the opening 45B, depending on whether or not the light-receiving element is received from the opening. The 45A enters the reflected light reflected by the external object to determine whether or not there is an external object.
於圖1(b)中，於由有機材料、陶瓷、導線架等構成之基板10之上表面設置有具有受光元件(光電二極體)及周邊電路之受光晶片(PDIC)20。受光晶片20係藉由接合線21、22而與基板10上之圖案11、12連接。 In FIG. 1(b), a light receiving chip (PDIC) 20 having a light receiving element (photodiode) and a peripheral circuit is provided on the upper surface of a substrate 10 made of an organic material, a ceramic, a lead frame or the like. The light-receiving wafer 20 is connected to the patterns 11 and 12 on the substrate 10 by bonding wires 21 and 22.
於基板10之上表面進而設置有由發光元件構成之發光晶片30。發光晶片30，係例如發光二極體(LED)之陽極電極及陰極電極中之一個經由由金屬構成之貫通孔15而與形成於基板10之下表面之圖案14連接。發光晶片30之另一電極係藉由接合線31而與基板10上之未圖示之圖案連接。 Further, on the upper surface of the substrate 10, a light-emitting chip 30 composed of a light-emitting element is further provided. The light-emitting wafer 30, for example, one of an anode electrode and a cathode electrode of a light-emitting diode (LED) is connected to a pattern 14 formed on a lower surface of the substrate 10 via a through hole 15 made of a metal. The other electrode of the light-emitting chip 30 is connected to a pattern (not shown) on the substrate 10 by a bonding wire 31.
於上述受光晶片20及發光晶片30之間設置有空間60，隔著空間60於受光晶片20側設置有不透明樹脂51A且於發光晶片30側設置有不透明樹脂51B。不透明樹脂51B遮蔽自發光晶片30向受光晶片20側射出之光。不透明樹脂51A之高度與不透明樹脂51B之高度大致相同。不透明樹脂51A係為了在外部光往空間60射入之情形不使受光晶片20接收外部光而設置。 A space 60 is provided between the light-receiving wafer 20 and the light-emitting chip 30, and an opaque resin 51A is provided on the light-receiving wafer 20 side via the space 60, and an opaque resin 51B is provided on the light-emitting chip 30 side. The opaque resin 51B shields the light emitted from the light-emitting wafer 30 toward the light-receiving wafer 20 side. The height of the opaque resin 51A is substantially the same as the height of the opaque resin 51B. The opaque resin 51A is provided so that the light-receiving wafer 20 does not receive external light in the case where external light is incident on the space 60.
於不透明樹脂51A之受光晶片20側，以覆蓋受光晶片20及接合線21、22之方式設置有透明樹脂41A，其與不透明樹脂51A高度大致相同。又，於不透明樹脂51B之發光晶片30側，以覆蓋發光晶片30及接合線31之方式設置有透明樹脂41B，其與不透明樹脂51B高度大致相同。 On the side of the light-receiving wafer 20 of the opaque resin 51A, a transparent resin 41A is provided so as to cover the light-receiving wafer 20 and the bonding wires 21 and 22, and is substantially the same height as the opaque resin 51A. Further, on the side of the light-emitting wafer 30 of the opaque resin 51B, a transparent resin 41B is provided so as to cover the light-emitting wafer 30 and the bonding wires 31, and is substantially the same height as the opaque resin 51B.
與透明樹脂41A、不透明樹脂51A、空間60、不透明樹脂51B、及透明樹脂41B之上表面相接設有散熱板45。散熱板係以薄金屬板(例如，鋁板或銅板)構成，具有位於發光晶片30之發光部上之開口45B與位於受光晶片20之受光部上之開口45A。 A heat dissipation plate 45 is provided in contact with the upper surface of the transparent resin 41A, the opaque resin 51A, the space 60, the opaque resin 51B, and the transparent resin 41B. The heat dissipation plate is formed of a thin metal plate (for example, an aluminum plate or a copper plate), and has an opening 45B on the light-emitting portion of the light-emitting chip 30 and an opening 45A on the light-receiving portion of the light-receiving wafer 20.
再者，基板10上之圖案11、12係經由與貫通孔15相同之其他貫通孔或未圖示之貫通通道而與形成於基板10之下表面之圖案13等連接。 Further, the patterns 11 and 12 on the substrate 10 are connected to the pattern 13 or the like formed on the lower surface of the substrate 10 via another through hole or a through passage (not shown) similar to the through hole 15.
參照圖2(a)~圖2(d)對上述光源一體型光感測器1之製造方法進行說明。於圖2(a)中，將受光晶片20黏晶於形成有圖案之電路基板10之上表面之既定位置。將發光晶片30黏晶於與貫通孔15連接之圖案上。繼而，分別利用接合線21、22及未圖示之接合線將受光晶片20之複數個電極與基板10之圖案11、12及其他圖案之間接合連接。又，藉由接合線31將發光晶片30之上側之電極與基板10之既定圖案之間接合連接。 A method of manufacturing the light source-integrated photosensor 1 will be described with reference to Figs. 2(a) to 2(d). In FIG. 2(a), the light-receiving wafer 20 is bonded to a predetermined position on the upper surface of the circuit substrate 10 on which the pattern is formed. The light-emitting wafer 30 is bonded to the pattern connected to the through hole 15. Then, a plurality of electrodes of the light-receiving wafer 20 are bonded to the patterns 11 and 12 of the substrate 10 and other patterns by bonding wires 21 and 22 and bonding wires (not shown). Further, the electrode on the upper side of the light-emitting wafer 30 and the predetermined pattern of the substrate 10 are joined to each other by the bonding wire 31.
於圖2(b)中，以分別覆蓋受光晶片20及接合線21、22、及發光晶片30及接合線31之方式利用透明樹脂41而密封。於圖2(c)中，於受光晶片20及發光晶片30間，實施對透明樹脂41之一部分進行切削直至到達基板10之表面為止之切割加工。藉此，將透明樹脂41分離成透明樹脂41A與41B。 In FIG. 2(b), the transparent resin 41 is sealed so as to cover the light-receiving wafer 20, the bonding wires 21 and 22, and the light-emitting wafer 30 and the bonding wires 31, respectively. In FIG. 2(c), a cutting process is performed between the light-receiving wafer 20 and the light-emitting wafer 30 until one portion of the transparent resin 41 is cut until it reaches the surface of the substrate 10. Thereby, the transparent resin 41 is separated into the transparent resins 41A and 41B.
於圖2(d)中，於透明樹脂41A與41B之間填充不透明樹脂51。使透明樹脂41A、不透明樹脂51、及透明樹脂41B之表面高度相同。 In FIG. 2(d), an opaque resin 51 is filled between the transparent resins 41A and 41B. The surface heights of the transparent resin 41A, the opaque resin 51, and the transparent resin 41B are made the same.
繼而，實施對不透明樹脂51之一部分進行切削直至到達基板10之表面為止之切割加工。藉由使用較圖2(c)中切割加工時寬度狹窄之片體，如圖1所示，獲得將不透明樹脂51分離成不透明樹脂51A與51B之空間60。最後，將具有開口45B及開口45A之散熱板45接著於透明樹脂41A、不透明樹脂51A、空間60、不透明樹脂51B、及透明樹脂41B之上表 面後，完成圖1之光源一體型光感測器1。 Then, a cutting process is performed to cut a portion of the opaque resin 51 until it reaches the surface of the substrate 10. By using a sheet having a narrower width than that in the cutting process of Fig. 2(c), as shown in Fig. 1, a space 60 for separating the opaque resin 51 into the opaque resins 51A and 51B is obtained. Finally, the heat dissipation plate 45 having the opening 45B and the opening 45A is attached to the transparent resin 41A, the opaque resin 51A, the space 60, the opaque resin 51B, and the transparent resin 41B. After the surface, the light source integrated photosensor 1 of FIG. 1 is completed.
根據以上說明之第一實施形態，可獲得以下之作用效果。 According to the first embodiment described above, the following effects can be obtained.
(1)光源一體型光感測器1，具備：受光晶片20，設置於基板10上之既定區域；發光晶片30，設置於基板10上之與受光晶片20不同之區域；透明樹脂41A，於受光晶片20上以覆蓋該受光晶片20之方式設置；透明樹脂41B，於發光晶片30上以覆蓋該發光晶片30之方式設置；不透明樹脂51A、51B，設置於透明樹脂41A與透明樹脂41B之間；以及散熱板45，與透明樹脂41A、41B、及不透明樹脂51A、51B分別相接。由於能高效率地使發光晶片30產生之熱散熱，因此可抑制來自發光晶片30之熱導致之特性劣化。一般而言，散熱板45之熱傳導率較樹脂之熱傳導率高，大約為數百倍至1000倍。因此，來自發光晶片30之熱傳至散熱板45後，從該散熱板45之表面廣泛地往感測器外散熱。其結果，可避免覆蓋受光晶片20之透明樹脂41A之表面變成變形、變色之溫度上升。 (1) The light source-integrated photosensor 1 includes a light-receiving wafer 20 disposed in a predetermined region on the substrate 10, a light-emitting wafer 30 disposed on a substrate 10 in a region different from the light-receiving wafer 20, and a transparent resin 41A. The light-receiving wafer 20 is disposed to cover the light-receiving wafer 20; the transparent resin 41B is disposed on the light-emitting wafer 30 so as to cover the light-emitting wafer 30; and the opaque resin 51A, 51B is disposed between the transparent resin 41A and the transparent resin 41B. And the heat dissipation plate 45 is in contact with the transparent resins 41A and 41B and the opaque resins 51A and 51B, respectively. Since heat generated by the light-emitting wafer 30 can be efficiently dissipated, deterioration in characteristics due to heat from the light-emitting wafer 30 can be suppressed. In general, the thermal conductivity of the heat sink 45 is higher than that of the resin, which is about several hundred to 1000 times. Therefore, after the heat from the light-emitting chip 30 is transmitted to the heat dissipation plate 45, heat is radiated from the surface of the heat dissipation plate 45 to the outside of the sensor. As a result, it is possible to prevent the surface of the transparent resin 41A covering the light-receiving wafer 20 from being deformed and the temperature of the discoloration rising.
(2)於上述(1)之光源一體型光感測器1中，散熱板45，在與發光晶片30及受光晶片20對應之位置具有開口45A、45B，從上相接透明樹脂41A、41B及不透明樹脂51A、51B形成之面。藉此，能使感測器內之熱高效率地傳至散熱板45，從散熱板45之表面往感測器外散熱。又，由於設有開口45A、開口45B，因此亦可抑制不需要光之影響。 (2) In the light source-integrated photosensor 1 of the above (1), the heat dissipation plate 45 has openings 45A and 45B at positions corresponding to the light-emitting wafer 30 and the light-receiving wafer 20, and the transparent resin 41A, 41B is connected from above. And the surface formed by the opaque resins 51A and 51B. Thereby, the heat in the sensor can be efficiently transmitted to the heat dissipation plate 45, and the heat is radiated from the surface of the heat dissipation plate 45 to the outside of the sensor. Further, since the opening 45A and the opening 45B are provided, it is possible to suppress the influence of unnecessary light.
(3)散熱板45之受光晶片20側之開口45A之尺寸取決於受光晶片20之尺寸而決定。亦即，以射入受光晶片20之反射光之入射角成為某種程度限定後之角度範圍之方式提升檢測精度。 (3) The size of the opening 45A on the side of the light receiving wafer 20 of the heat radiating plate 45 is determined depending on the size of the light receiving wafer 20. That is, the detection accuracy is improved so that the incident angle of the reflected light incident on the light-receiving wafer 20 becomes a certain angular range.
(變形例1) (Modification 1)
圖3係變形例1之光源一體型光感測器1B之剖面圖。圖3之光源一體型光感測器1B與上述光源一體型光感測器1相比不同之處在於：僅於空間60之受光晶片20側設置有不透明樹脂51。 Fig. 3 is a cross-sectional view showing a light source-integrated photosensor 1B according to Modification 1. The light source-integrated photosensor 1B of FIG. 3 is different from the above-described light source-integrated photosensor 1 in that an opaque resin 51 is provided only on the side of the light receiving wafer 20 of the space 60.
針對變形例1之光源一體型光感測器1B，於圖2(d)中例示之不透明樹脂51之透明樹脂41B側，實施對不透明樹脂51之一部分進行切削直至到達基板10之表面為止之切割加工。藉由該加工，僅於空間60之受光晶片20側殘留不透明樹脂51，於空間60之發光晶片30側未殘留不透明樹脂。藉由設置不透明樹脂51，即便外部光入射至空間60，亦可遮蔽外部光而不使受光晶片20接收光。 With respect to the light source-integrated photosensor 1B of the first modification, on the side of the transparent resin 41B of the opaque resin 51 illustrated in FIG. 2(d), cutting is performed on one portion of the opaque resin 51 until reaching the surface of the substrate 10. machining. By this processing, the opaque resin 51 remains only on the side of the light-receiving wafer 20 of the space 60, and the opaque resin remains on the side of the light-emitting wafer 30 of the space 60. By providing the opaque resin 51, even if external light is incident on the space 60, external light can be shielded without receiving the light by the light receiving wafer 20.
於變形例1之情形時，由於設置散熱板45以提高散熱性，因此可避免覆蓋受光晶片20之透明樹脂41A之表面變成變形、變色之溫度上升。又，藉由設置有空間60，透過不透明樹脂51而自發光晶片30側朝向受光晶片20側之熱傳導得到緩和。 In the case of the first modification, since the heat dissipation plate 45 is provided to improve heat dissipation, it is possible to prevent the surface of the transparent resin 41A covering the light-receiving wafer 20 from being deformed and the temperature of discoloration is increased. Further, by providing the space 60, the heat conduction from the light-emitting wafer 30 side toward the light-receiving wafer 20 side through the opaque resin 51 is alleviated.
(變形例2) (Modification 2)
圖4係變形例2之光源一體型光感測器1C之剖面圖。圖4之光源一體型光感測器1C與上述光源一體型光感測器1相比不同之處在於：在透明樹脂41A之空間60側之側面形成有遮光膜52。 Fig. 4 is a cross-sectional view showing a light source-integrated photosensor 1C according to a second modification. The light source-integrated photosensor 1C of FIG. 4 is different from the above-described light source-integrated photosensor 1 in that a light shielding film 52 is formed on the side surface of the space 60 side of the transparent resin 41A.
於變形例2之光源一體型光感測器1C中，對圖2(c)中例示之透明樹脂41A之右側面(空間側)濺射蒸鍍既定之金屬材料而形成遮光膜52。藉此，能夠以入射至空間60之外部光不被受光晶片20接收之方式進行遮光。 In the light source-integrated photosensor 1C of the second modification, a predetermined metal material is sputter-deposited on the right side surface (space side) of the transparent resin 41A illustrated in FIG. 2(c) to form a light shielding film 52. Thereby, it is possible to shield the external light incident on the space 60 from being received by the light receiving wafer 20.
於變形例2之情形時，由於設置散熱板45以提高散熱性，因此可避免覆蓋受光晶片20之透明樹脂41A之表面變成變形、變色之溫度上升。又，藉由設置有空間60，透過不透明樹脂51而自發光晶片30側朝向受光晶片20側之熱傳導得到緩和。 In the case of the second modification, since the heat dissipation plate 45 is provided to improve heat dissipation, it is possible to prevent the surface of the transparent resin 41A covering the light-receiving wafer 20 from being deformed and the temperature of the discoloration is increased. Further, by providing the space 60, the heat conduction from the light-emitting wafer 30 side toward the light-receiving wafer 20 side through the opaque resin 51 is alleviated.
(變形例3) (Modification 3)
圖5係變形例3之光源一體型光感測器1D之剖面圖。圖5之光源一體型光感測器1D與圖1之光源一體型光感測器1相比不同之處在於：在空間 60內設置有熱傳導率較高之材料例如金屬板70、及對準成為金屬板70之正下方之位置而形成有貫通孔16。 Fig. 5 is a cross-sectional view showing a light source-integrated photosensor 1D according to a third modification. The light source integrated photosensor 1D of FIG. 5 is different from the light source integrated photosensor 1 of FIG. 1 in that: A through hole 16 is formed in a material 60 having a high thermal conductivity, such as a metal plate 70, and a position immediately below the metal plate 70.
於變形例3之光源一體型光感測器1D中，對在基板10追加形成有貫通孔16之基板10B實施與光源一體型光感測器1相同之處理之後，於貫通孔16之正上方設置導熱性材料之金屬板70。可使自發光晶片30側傳遞至金屬板70之熱經由貫通孔16自基板10B之下表面側圖案17散熱。 In the light source-integrated photosensor 1D according to the third modification, the substrate 10B in which the through hole 16 is additionally formed on the substrate 10 is subjected to the same processing as that of the light source-integrated photosensor 1, and is immediately above the through hole 16. A metal plate 70 of a thermally conductive material is provided. The heat transferred from the side of the self-luminous wafer 30 to the metal plate 70 can be dissipated from the lower surface side pattern 17 of the substrate 10B via the through hole 16.
再者，為了易於將發光晶片30側之熱吸收至金屬板70，於金屬板70與不透明樹脂51B之間塗佈填充劑而將間隙填埋即可。藉由將空間60預先設在貫通孔16之正上方，設在空間60之金屬板70位於貫通孔16上，因此傳至金屬板70之熱透過貫通孔16高效率地往基板10下側散發。 Further, in order to easily absorb the heat on the side of the light-emitting chip 30 to the metal plate 70, a filler may be applied between the metal plate 70 and the opaque resin 51B to fill the gap. By placing the space 60 directly above the through hole 16, the metal plate 70 provided in the space 60 is positioned on the through hole 16, so that the heat transmitting through hole 16 of the metal plate 70 is efficiently radiated toward the lower side of the substrate 10. .
另一方面，傳至金屬板70之熱亦傳至散熱板45。於變形例3之情形時，由於設置散熱板45以提高散熱性，因此可避免覆蓋受光晶片20之透明樹脂41A之表面變成變形、變色之溫度上升。此外，金屬板70之熱傳導率較樹脂之熱傳導率高，大約為數百倍至1000倍。因此，傳至金屬板70之熱立刻透過散熱板45及貫通孔16往基板10下側傳遞。 On the other hand, the heat transferred to the metal plate 70 is also transmitted to the heat sink 45. In the case of the third modification, since the heat dissipation plate 45 is provided to improve heat dissipation, it is possible to prevent the surface of the transparent resin 41A covering the light-receiving wafer 20 from being deformed and the temperature of discoloration rising. Further, the thermal conductivity of the metal plate 70 is higher than that of the resin, and is about several hundred to 1,000 times. Therefore, the heat transmitted to the metal plate 70 is immediately transmitted to the lower side of the substrate 10 through the heat dissipation plate 45 and the through hole 16.
(變形例4) (Modification 4)
圖6係變形例4之光源一體型光感測器1E之剖面圖。圖6之光源一體型光感測器1E與圖3之光源一體型光感測器1B相比不同之處在於：在空間60內設置有熱傳導率較高之材料例如金屬板70、及對準成為金屬板70之正下方之位置而形成有貫通孔16。 Fig. 6 is a cross-sectional view showing a light source-integrated photosensor 1E according to a fourth modification. The light source-integrated photosensor 1E of FIG. 6 is different from the light source-integrated photosensor 1B of FIG. 3 in that a material having a high thermal conductivity such as a metal plate 70 and alignment are provided in the space 60. A through hole 16 is formed at a position directly below the metal plate 70.
於變形例4之光源一體型光感測器1E中，對在基板10追加形成有貫通孔16之基板10B實施與光源一體型光感測器1B相同之處理之後，於貫通孔16之正上方設置導熱性材料之金屬板70。可使自發光晶片30側傳遞至金屬板70之熱經由貫通孔16自基板10B之下表面側圖案17散熱。 In the light source-integrated photosensor 1E of the fourth modification, the substrate 10B in which the through hole 16 is additionally formed on the substrate 10 is subjected to the same process as the light source integrated photosensor 1B, and is immediately above the through hole 16. A metal plate 70 of a thermally conductive material is provided. The heat transferred from the side of the self-luminous wafer 30 to the metal plate 70 can be dissipated from the lower surface side pattern 17 of the substrate 10B via the through hole 16.
此外，為了易於將發光晶片30側之熱吸收至金屬板70，於 金屬板70與透明樹脂41B之間塗佈填充劑而將間隙填埋即可。藉由將空間60預先設在貫通孔16之正上方，設在空間60之金屬板70位於貫通孔16上，因此傳至金屬板70之熱透過貫通孔16高效率地往基板10下側散發。 In addition, in order to easily absorb the heat of the side of the light-emitting chip 30 to the metal plate 70, A filler may be applied between the metal plate 70 and the transparent resin 41B to fill the gap. By placing the space 60 directly above the through hole 16, the metal plate 70 provided in the space 60 is positioned on the through hole 16, so that the heat transmitting through hole 16 of the metal plate 70 is efficiently radiated toward the lower side of the substrate 10. .
另一方面，傳至金屬板70之熱亦傳至散熱板45。於變形例4之情形時，由於設置散熱板45以提高散熱性，因此可避免覆蓋受光晶片20之透明樹脂41A之表面變成變形、變色之溫度上升。與變形例3之情形相同，金屬板70之熱傳導率較樹脂之熱傳導率高，因此傳至金屬板70之熱立刻透過散熱板45及貫通孔16往基板10下側傳遞。 On the other hand, the heat transferred to the metal plate 70 is also transmitted to the heat sink 45. In the case of the fourth modification, since the heat dissipation plate 45 is provided to improve heat dissipation, it is possible to prevent the surface of the transparent resin 41A covering the light-receiving wafer 20 from being deformed and the temperature of discoloration is increased. As in the case of Modification 3, since the thermal conductivity of the metal plate 70 is higher than that of the resin, the heat transmitted to the metal plate 70 is immediately transmitted to the lower side of the substrate 10 through the heat dissipation plate 45 and the through hole 16.
(變形例5) (Modification 5)
於變形例3或變形例4中，於設置金屬板70之情形時，亦可省略不透明樹脂51A、51B或不透明樹脂51。於此情形時，由金屬板70遮蔽自發光晶片30向受光晶片20側射出之直射光。 In the third modification or the fourth modification, when the metal plate 70 is provided, the opaque resin 51A, 51B or the opaque resin 51 may be omitted. In this case, the direct light emitted from the light-emitting chip 30 toward the light-receiving chip 20 side is shielded by the metal plate 70.
<第二實施形態> <Second embodiment>
圖7係例示本發明之第二實施形態之光源一體型光感測器2之圖。圖7(a)係光源一體型光感測器2之俯視圖，圖7(b)係圖7(a)中光源一體型光感測器2之E-E’剖面圖。與第一實施形態之光源一體型光感測器1(圖1)相較，不同點在於在感測器周圍設有不透明樹脂51C及不透明樹脂51D，因此以此不同點為中心說明光源一體型光感測器2之製造方法。 Fig. 7 is a view showing a light source-integrated photosensor 2 according to a second embodiment of the present invention. Fig. 7(a) is a plan view of the light source-integrated photosensor 2, and Fig. 7(b) is a cross-sectional view taken along line E-E' of the light source-integrated photosensor 2 of Fig. 7(a). Compared with the light source-integrated photosensor 1 (FIG. 1) of the first embodiment, the difference is that an opaque resin 51C and an opaque resin 51D are provided around the sensor, so that the light source integrated type is described centering on the difference. A method of manufacturing the photo sensor 2.
光源一體型光感測器2之製造步驟之中，至以分別覆蓋受光晶片20及接合線21、22、及發光晶片30及接合線31之方式利用透明樹脂41而密封(圖2(b))為止之步驟，與第一實施形態說明之步驟相同，因此省略說明。第二實施形態中，從透明樹脂41之密封狀態，在受光晶片20及發光晶片30間與基板10上之外周部，分別實施對透明樹脂41之一部分進行切削直至到達基板10之表面為止之切割加工。藉此，如圖8(a)、圖8(b)所示，透明樹脂41分離成透明樹脂41A與41B。圖8(a)為在此時點之俯視圖，圖 8(b)為在此時點之剖面圖。 In the manufacturing steps of the light source-integrated photosensor 2, the transparent resin 41 is sealed so as to cover the light-receiving wafer 20, the bonding wires 21 and 22, and the light-emitting wafer 30 and the bonding wires 31 (FIG. 2(b) The steps up to the same are the same as the steps described in the first embodiment, and thus the description thereof is omitted. In the second embodiment, from the sealed state of the transparent resin 41, cutting of one portion of the transparent resin 41 to the surface of the substrate 10 is performed between the light-receiving wafer 20 and the light-emitting wafer 30 and the outer peripheral portion of the substrate 10, respectively. machining. Thereby, as shown in FIGS. 8(a) and 8(b), the transparent resin 41 is separated into the transparent resins 41A and 41B. Figure 8 (a) is a top view at this point, 8(b) is a cross-sectional view at this point.
圖9(a)中，對切割加工後之槽填充不透明樹脂51。不透明樹脂51使用熱傳導率高之熱傳導材料。此外，使透明樹脂41A、不透明樹脂51、及透明樹脂41B之表面高度相同。 In Fig. 9(a), the groove after the cutting process is filled with the opaque resin 51. The opaque resin 51 uses a heat conductive material having a high thermal conductivity. Further, the surface heights of the transparent resin 41A, the opaque resin 51, and the transparent resin 41B are made the same.
繼而，實施對不透明樹脂51之一部分進行切削直至到達基板10之表面為止之切割加工。藉由使用較透明樹脂41A及透明樹脂41B間之距離寬度狹窄之片體，如圖9(b)所示，獲得將不透明樹脂51分離成不透明樹脂51A與51B之空間60。最後，將具有開口45B及開口45A之散熱板45接著於不透明樹脂51C、透明樹脂41A、不透明樹脂51A、空間60、不透明樹脂51B、透明樹脂41B、及不透明樹脂51D之上表面後，完成圖7之光源一體型光感測器2。 Then, a cutting process is performed to cut a portion of the opaque resin 51 until it reaches the surface of the substrate 10. By using a sheet having a narrow width between the transparent resin 41A and the transparent resin 41B, as shown in Fig. 9(b), a space 60 for separating the opaque resin 51 into the opaque resins 51A and 51B is obtained. Finally, after the heat dissipation plate 45 having the opening 45B and the opening 45A is attached to the upper surfaces of the opaque resin 51C, the transparent resin 41A, the opaque resin 51A, the space 60, the opaque resin 51B, the transparent resin 41B, and the opaque resin 51D, FIG. 7 is completed. Light source integrated photo sensor 2.
此外，實際上製造光源一體型光感測器2之情形，在基板10C上預先形成複數個圖9(b)所示之感測器，對各感測器間之不透明樹脂51進行切割加工以切斷並分片化。圖10中，粗黑線L顯示用以分片化之切斷部位。 Further, in the case of actually manufacturing the light source-integrated photosensor 2, a plurality of sensors shown in FIG. 9(b) are formed in advance on the substrate 10C, and the opaque resin 51 between the respective sensors is cut and processed. Cut and slice. In Fig. 10, the thick black line L shows the cut portion for dicing.
根據以上說明之第二實施形態，可獲得以下之作用效果。 According to the second embodiment described above, the following effects can be obtained.
(1)光源一體型光感測器2，具備：受光晶片20，設置於基板10C上之既定區域；發光晶片30，設置於基板10C上之與受光晶片20不同之區域；透明樹脂41A，於受光晶片20上以覆蓋該受光晶片20之方式設置；透明樹脂41B，於發光晶片30上以覆蓋該發光晶片30之方式設置；不透明樹脂51A、51B，設置於透明樹脂41A與透明樹脂41B之間；以及作為散熱構件之不透明樹脂51(51C、51D)，與透明樹脂41A、41B、及不透明樹脂51A、51B分別相接。由於能高效率地使發光晶片30產生之熱散熱，因此可抑制來自發光部之熱導致之特性劣化。具體而言，來自發光晶片30之熱傳至不透明樹脂51後，從該不透明樹脂51往感測器外散熱。其結果，可避免覆蓋 受光晶片20之透明樹脂41A之表面變成變形、變色之溫度上升。 (1) The light source-integrated photosensor 2 includes a light-receiving wafer 20 disposed in a predetermined region on the substrate 10C, a light-emitting wafer 30 disposed on a substrate 10C in a region different from the light-receiving wafer 20, and a transparent resin 41A. The light-receiving wafer 20 is disposed to cover the light-receiving wafer 20; the transparent resin 41B is disposed on the light-emitting wafer 30 so as to cover the light-emitting wafer 30; and the opaque resin 51A, 51B is disposed between the transparent resin 41A and the transparent resin 41B. And the opaque resin 51 (51C, 51D) as a heat radiating member, and the transparent resin 41A, 41B, and the opaque resin 51A, 51B are respectively connected. Since heat generated by the light-emitting wafer 30 can be efficiently dissipated, deterioration of characteristics due to heat from the light-emitting portion can be suppressed. Specifically, after the heat from the light-emitting wafer 30 is transferred to the opaque resin 51, heat is radiated from the opaque resin 51 to the outside of the sensor. As a result, coverage can be avoided The surface of the transparent resin 41A of the light-receiving wafer 20 is deformed and the temperature of discoloration rises.
(2)於上述(1)之光源一體型光感測器2中，藉由包圍基板10C周圍且具有熱傳導性之不透明樹脂51(51C、51D)與透明樹脂41A及透明樹脂41B間之不透明樹脂51A、51B構成散熱構件。一般而言，具有熱傳導性之不透明樹脂51之熱傳導率較一般樹脂之熱傳導率大數十倍至約100倍。因此，來自發光晶片30之熱傳至不透明樹脂51後，從該不透明樹脂51往周圍之感測器外廣泛地散熱。 (2) In the light source-integrated photosensor 2 of the above (1), the opaque resin between the transparent resin 41A and the transparent resin 41B is surrounded by the opaque resin 51 (51C, 51D) surrounding the substrate 10C and having thermal conductivity. 51A and 51B constitute a heat dissipating member. In general, the thermal conductivity of the opaque resin 51 having thermal conductivity is several ten times to about 100 times greater than the thermal conductivity of a general resin. Therefore, after the heat from the light-emitting wafer 30 is transferred to the opaque resin 51, heat is widely dissipated from the opaque resin 51 to the periphery of the sensor.
(3)於上述(2)之光源一體型光感測器2中，散熱構件進一步包含散熱板45，該散熱板45，在與發光晶片30及受光晶片20對應之位置具有開口45A、45B，從上相接透明樹脂41A、41B及不透明樹脂51A、51B、51C、51D形成之面。因此，來自發光晶片30之熱亦傳至散熱板45，從該散熱板45之表面廣泛地往感測器外散熱。 (3) In the light source-integrated photosensor 2 of the above (2), the heat dissipating member further includes a heat dissipating plate 45 having openings 45A and 45B at positions corresponding to the light emitting chip 30 and the light receiving wafer 20, The surface formed by the upper transparent resins 41A and 41B and the opaque resins 51A, 51B, 51C, and 51D is formed. Therefore, heat from the light-emitting chip 30 is also transmitted to the heat sink 45, and heat is radiated from the surface of the heat sink 45 to the outside of the sensor.
(變形例6) (Modification 6)
從光源一體型光感測器2省略散熱板45，藉由包圍基板10C周圍之不透明樹脂51(51C、51D)與透明樹脂41A及透明樹脂41B間之不透明樹脂51A、51B構成散熱構件亦可(圖9(b)之狀態)。若將不透明樹脂51設在基板10C周圍，則不透明樹脂51與空氣相接之表面積變廣。藉此，在來自不透明樹脂51之散熱量變得較在發光晶片30之散熱量大之情形，即使不設置散熱板45，亦可避免覆蓋受光晶片20之透明樹脂41A之表面變成變形、變色之溫度上升。 The heat dissipation plate 45 is omitted from the light source-integrated photosensor 2, and the heat-dissipating member may be constituted by the opaque resin 51 (51C, 51D) surrounding the periphery of the substrate 10C and the opaque resin 51A, 51B between the transparent resin 41A and the transparent resin 41B. Figure 9 (b) state). When the opaque resin 51 is provided around the substrate 10C, the surface area of the opaque resin 51 in contact with the air becomes wide. Thereby, in the case where the amount of heat radiation from the opaque resin 51 becomes larger than that of the light-emitting wafer 30, even if the heat dissipation plate 45 is not provided, the temperature of the surface of the transparent resin 41A covering the light-receiving wafer 20 can be prevented from being deformed and discolored. rise.
(變形例7) (Modification 7)
於上述說明中，對將空間60之深度設為到達基板10之表面之深度之例進行了說明。於即便代替此而未設為到達基板10之表面之深度亦可遮蔽從發光晶片30往受光晶片20側在感測器內傳遞之光之情形時，使空間60之深度在未到達基板10之途中之深度停止(半切斷)亦可。 In the above description, an example in which the depth of the space 60 is set to the depth reaching the surface of the substrate 10 has been described. Even if the depth of the surface of the substrate 10 is not set instead of this, the light transmitted from the light-emitting chip 30 to the light-receiving wafer 20 side in the sensor can be shielded, so that the depth of the space 60 does not reach the substrate 10. The depth of the way to stop (half cut) is also possible.
(變形例8) (Modification 8)
上述說明中，對將受光晶片20、發光晶片30與基板10之圖案之間接合連接之例進行了說明，但亦可使用除此以外之連接方法、例如倒裝晶片連接或TAB連接。 In the above description, an example in which the light-receiving wafer 20, the light-emitting wafer 30, and the pattern of the substrate 10 are bonded to each other has been described. However, other connection methods such as flip chip bonding or TAB connection may be used.
(變形例9) (Modification 9)
以上說明之第一及第二實施形態及變形例1~8之光源一體型光感測器中，使散熱板45為在玻璃環氧基板之表面被覆有銅箔之複合材亦可。此情形，在光源一體型光感測器之表面使玻璃環氧基板露出，將銅箔配置在發光晶片30側。從發光晶片30傳遞至透明樹脂41A之熱傳遞至銅箔，從散熱板45D之表面散熱。 In the light source-integrated photosensors of the first and second embodiments and the modifications 1 to 8 described above, the heat dissipation plate 45 may be a composite material in which a copper foil is coated on the surface of the glass epoxy substrate. In this case, the glass epoxy substrate is exposed on the surface of the light source-integrated photosensor, and the copper foil is placed on the side of the light-emitting wafer 30. The heat transferred from the light-emitting wafer 30 to the transparent resin 41A is transferred to the copper foil, and heat is radiated from the surface of the heat dissipation plate 45D.
又，在環氧樹脂材之表面塗布黑色塗料或在環氧樹脂混合黑色塗料即可。能以玻璃環氧基板之表面吸收從發光晶片30放射且從外部之對象物反射之反射光。其結果，可防止反射光在散熱板45之表面引起不需要之反射，可防止誤檢測。 Further, a black paint may be applied to the surface of the epoxy resin material or a black paint may be mixed with the epoxy resin. The reflected light emitted from the light-emitting wafer 30 and reflected from the external object can be absorbed on the surface of the glass epoxy substrate. As a result, it is possible to prevent the reflected light from causing unnecessary reflection on the surface of the heat dissipation plate 45, and it is possible to prevent erroneous detection.
此外，作為複合材料雖使用玻璃環氧基板與銅箔，但只要為環氧樹脂等之有機材料與鋁或金等之金屬，則其組合並不限定。 Further, although a glass epoxy substrate and a copper foil are used as the composite material, the combination is not limited as long as it is an organic material such as an epoxy resin or a metal such as aluminum or gold.
<第三實施形態> <Third embodiment>
圖11係例示本發明第三實施形態之光源一體型光感測器2B之剖面圖，相當於上述第二實施形態之光源一體型光感測器2之剖面圖(圖7(b))。與圖7(b)之情形相較，散熱板45分離成散熱板45C及45D之點、與散熱板45C、45D之材質以複合構件構成之點不同，因此以此等不同點為中心說明光源一體型光感測器2B。 Fig. 11 is a cross-sectional view showing a light source-integrated photosensor 2B according to a third embodiment of the present invention, and corresponds to a cross-sectional view of the light source-integrated photosensor 2 of the second embodiment (Fig. 7(b)). Compared with the case of FIG. 7(b), the heat sink 45 is separated into the heat sinks 45C and 45D, and the materials of the heat sinks 45C and 45D are different from each other by the composite member. Therefore, the light source is described with respect to the different points. Integrated photo sensor 2B.
本實施形態之散熱板45C、45D係以積層有金屬層與有機材料層之平板狀複合構件構成。此外，以複合構件之金屬層朝下(透明樹脂41側)且有機材料層朝上之方式設置於透明樹脂41之上。金屬層可使用例如銅 箔(鋁或金箔亦可)，有機材料層可使用例如黑色之玻璃環氧材料。第三實施形態中，在第一及第二實施形態所示之散熱板45分離成發光晶片30上之散熱板45D與受光晶片20上之散熱板45C。散熱板45D在發光晶片30之發光部上具有開口45B，散熱板45C在受光晶片20之受光部上具有開口45A。 The heat dissipation plates 45C and 45D of the present embodiment are formed of a flat composite member in which a metal layer and an organic material layer are laminated. Further, the metal member of the composite member is disposed on the transparent resin 41 so that the metal layer faces downward (the transparent resin 41 side) and the organic material layer faces upward. The metal layer can use, for example, copper A foil (aluminum or gold foil may also be used), and an organic material layer may use, for example, a black glass epoxy material. In the third embodiment, the heat dissipation plate 45 shown in the first and second embodiments is separated into the heat dissipation plate 45D on the light-emitting wafer 30 and the heat dissipation plate 45C on the light-receiving wafer 20. The heat sink 45D has an opening 45B in the light emitting portion of the light emitting chip 30, and the heat sink 45C has an opening 45A in the light receiving portion of the light receiving wafer 20.
此處，作為黑色之玻璃環氧材料，在環氧樹脂材之表面塗布黑色塗料或在環氧樹脂混合黑色塗料即可。 Here, as the black glass epoxy material, a black paint may be applied to the surface of the epoxy resin material or a black paint may be mixed with the epoxy resin.
說明光源一體型光感測器2B之製造步驟。以分別覆蓋受光晶片20及接合線21、22與發光晶片30及接合線31之方式以透明樹脂41加以密封(圖2(b))為止之步驟，與第一實施形態說明之步驟相同，因此省略說明。第三實施形態中，從圖2(b)所示之中間產品之已密封透明樹脂41之上接著由上述複合構件構成之散熱板素材。散熱板素材與圖1(a)所示之散熱板45形狀相同。 The manufacturing steps of the light source integrated photosensor 2B will be described. The steps of sealing the transparent wafer 41 so as to cover the light-receiving wafer 20 and the bonding wires 21 and 22, the light-emitting wafer 30, and the bonding wires 31 (Fig. 2(b)) are the same as those described in the first embodiment. The description is omitted. In the third embodiment, the heat-dissipating plate material composed of the above composite member is attached to the sealed transparent resin 41 of the intermediate product shown in Fig. 2(b). The heat sink material is the same shape as the heat sink 45 shown in Fig. 1(a).
接著，從散熱板45之上，在受光晶片20及發光晶片30間與基板10上之外周部分別施加將透明樹脂41之一部分切削至到達基板10C之表面為止之切割加工。藉此，透明樹脂41及散熱板45分離成透明樹脂41A及散熱板45C、透明樹脂41B及散熱板45D。 Next, from the heat radiating plate 45, a cutting process in which one portion of the transparent resin 41 is cut to reach the surface of the substrate 10C is applied between the light-receiving wafer 20 and the light-emitting wafer 30 and the outer peripheral portion of the substrate 10, respectively. Thereby, the transparent resin 41 and the heat dissipation plate 45 are separated into the transparent resin 41A, the heat dissipation plate 45C, the transparent resin 41B, and the heat dissipation plate 45D.
再者，與在第二實施形態說明之步驟相同，對切割加工後之槽填充不透明樹脂51。不透明樹脂51係使用熱傳導率高之熱傳導材料。 Further, in the same manner as the procedure described in the second embodiment, the groove after the dicing process is filled with the opaque resin 51. The opaque resin 51 is a heat conductive material having a high thermal conductivity.
接著，施加將不透明樹脂51之一部分切削至到達基板10C之表面為止之切割加工。藉由使用寬度較透明樹脂41A及透明樹脂41B間之距離狹窄之板件，如圖11所例示，獲得將不透明樹脂51分離成不透明樹脂51A與51B之空間60。藉由上述，完成圖11之光源一體型光感測器2B。 Next, a cutting process of cutting a portion of the opaque resin 51 to reach the surface of the substrate 10C is applied. By using a plate member having a narrower distance between the transparent resin 41A and the transparent resin 41B, as illustrated in Fig. 11, a space 60 for separating the opaque resin 51 into the opaque resins 51A and 51B is obtained. With the above, the light source-integrated photosensor 2B of Fig. 11 is completed.
此外，實際製造光源一體型光感測器2B時，與在第二實施形態說明之情形相同，在基板上預先形成複數個(例如，數百~數千個)感測器，將各感測器間之不透明樹脂51C,51D藉由切割加工切斷以分片化。 Further, when the light source-integrated photosensor 2B is actually manufactured, as in the case of the second embodiment, a plurality of (for example, hundreds to thousands) sensors are formed in advance on the substrate, and each sensor is sensed. The opaque resin 51C, 51D between the devices is cut by cutting to be divided into pieces.
根據以上說明之第三實施形態，可獲得下述作用效果。 According to the third embodiment described above, the following effects can be obtained.
(1)光源一體型光感測器2B，具備：受光晶片20，設置於基板10C上之既定區域，且以透明樹脂41A密封；發光晶片30，設置於基板10C上之與受光晶片20不同之區域，且以透明樹脂41B密封；不透明樹脂51A、51C，覆蓋透明樹脂41A之周圍；不透明樹脂51B、51D，覆蓋透明樹脂41B之周圍；空間60，設置於不透明樹脂51A及不透明樹脂51B之間；散熱板45C，覆蓋透明樹脂41A之上面，在受光晶片20上具有開口45A；以及散熱板45D，覆蓋透明樹脂41B之上面，在受光晶片30上具有開口45B。由於能使在發光晶片30產生之熱高效率地散熱，因此可抑制熱導致之特性劣化。具體而言，來自發光晶片30之熱往散熱板45D、不透明樹脂51B、51D傳遞後，從散熱板45D、不透明樹脂51B、51D往感測器外散熱。其結果，可避免覆蓋受光晶片20之透明樹脂41A之表面變成變形、變色之溫度上升。 (1) The light source-integrated photosensor 2B includes a light-receiving wafer 20 which is provided in a predetermined region on the substrate 10C and sealed by a transparent resin 41A. The light-emitting wafer 30 is disposed on the substrate 10C differently from the light-receiving wafer 20. The area is sealed with a transparent resin 41B; the opaque resin 51A, 51C covers the periphery of the transparent resin 41A; the opaque resin 51B, 51D covers the periphery of the transparent resin 41B; the space 60 is disposed between the opaque resin 51A and the opaque resin 51B; The heat dissipation plate 45C covers the upper surface of the transparent resin 41A, has an opening 45A on the light receiving wafer 20, and a heat dissipation plate 45D covers the upper surface of the transparent resin 41B, and has an opening 45B on the light receiving wafer 30. Since heat generated in the light-emitting wafer 30 can be efficiently dissipated, deterioration in characteristics due to heat can be suppressed. Specifically, after the heat from the light-emitting wafer 30 is transferred to the heat-dissipating plate 45D and the opaque resin 51B and 51D, the heat is radiated from the heat-dissipating plate 45D and the opaque resin 51B and 51D to the outside of the sensor. As a result, it is possible to prevent the surface of the transparent resin 41A covering the light-receiving wafer 20 from being deformed and the temperature of the discoloration rising.
(2)上述(1)之光源一體型光感測器2B中，散熱板45D非以金屬板而是以積層有銅箔與玻璃環氧基板之複合構件構成。此種複合構件，相較於金屬板，切割等之加工容易，因此與在後續步驟將由金屬板構成之散熱板接著之第二實施形態不同，能在較早階段將由複合構件構成之散熱板接著於透明樹脂41之上。其結果，可提高製程上之自由度。 (2) In the light source-integrated photosensor 2B of the above (1), the heat dissipation plate 45D is formed of a composite member in which a copper foil and a glass epoxy substrate are laminated instead of a metal plate. Such a composite member is easier to process than a metal plate, and the like, and therefore, unlike the second embodiment in which the heat sink formed of the metal plate is continued in the subsequent step, the heat sink formed of the composite member can be advanced at an early stage. Above the transparent resin 41. As a result, the degree of freedom in the process can be improved.
(3)由於使構成散熱板45D之複合構件之金屬層朝下(透明樹脂41B側)，因此能使來自發光晶片30之熱從透明樹脂41B往散熱板45D高效率地傳遞，從該散熱板45D之表面往感測器外廣泛地散熱。 (3) Since the metal layer of the composite member constituting the heat dissipation plate 45D faces downward (on the side of the transparent resin 41B), heat from the light-emitting chip 30 can be efficiently transferred from the transparent resin 41B to the heat dissipation plate 45D from the heat dissipation plate. The surface of the 45D dissipates heat widely outside the sensor.
(4)由於設有將不透明樹脂51A與51B分離之空間60，因此可妨礙從發光晶片30側往受光晶片20側之經由不透明樹脂之熱傳遞。又，與空間60相接之不透明樹脂51B之表面積增加，來自不透明樹脂51B之散熱性提高。 (4) Since the space 60 separating the opaque resins 51A and 51B is provided, heat transfer from the luminescent wafer 30 side to the light receiving wafer 20 side via the opaque resin can be hindered. Further, the surface area of the opaque resin 51B that is in contact with the space 60 is increased, and the heat dissipation property from the opaque resin 51B is improved.
(5)由於使構成散熱板45C、45D之複合構件之有機材料層在 光源一體型光感測器2B之上面露出且使有機材料層為黑色，因此可抑制來自外部之不需要光之反射。亦即，由於能以玻璃環氧基板之表面吸收從發光晶片30放射且從外部之對象物反射之反射光，因此可防止反射光在散熱板45之表面引起不需要之反射，可防止誤檢測。 (5) Since the organic material layer constituting the composite member of the heat dissipation plates 45C, 45D is The upper surface of the light source-integrated photosensor 2B is exposed and the organic material layer is black, so that reflection of unnecessary light from the outside can be suppressed. In other words, since the reflected light radiated from the light-emitting chip 30 and reflected from the external object can be absorbed on the surface of the glass epoxy substrate, the reflected light can be prevented from causing unnecessary reflection on the surface of the heat dissipation plate 45, and false detection can be prevented. .
上述中，對多種實施形態及變形例進行了說明，但本發明並不限定於該等內容。各實施形態及各變形例之構成亦可適當進行組合。可於本發明之技術思想之範圍內研究出之其他態樣亦包含於本發明之範圍內。 In the above, various embodiments and modifications have been described, but the present invention is not limited to the contents. The configurations of the respective embodiments and the modifications may be combined as appropriate. Other aspects which can be studied within the scope of the technical idea of the present invention are also included in the scope of the present invention.
以下之優先權基礎申請之揭示內容係以引用文之形式寫入於本文中。 The disclosure of the following priority application is hereby incorporated by reference.
日本專利申請2012年第138589號(2012年6月20日申請) Japanese Patent Application No. 138589, 2012 (applicant on June 20, 2012)
PCT/JP2013/057074(2013年3月13日申請) PCT/JP2013/057074 (application on March 13, 2013)
1‧‧‧光源一體型光感測器 1‧‧‧Light source integrated light sensor
10‧‧‧基板 10‧‧‧Substrate
11、12、13、14‧‧‧圖案 11, 12, 13, 14 ‧ ‧ patterns
15‧‧‧貫通孔 15‧‧‧through holes
20‧‧‧受光晶片 20‧‧‧Lighted wafer
21、22、31‧‧‧接合線 21, 22, 31‧‧‧ bonding wires
30‧‧‧發光晶片 30‧‧‧Lighting chip
41A、41B‧‧‧透明樹脂 41A, 41B‧‧‧ Transparent resin
45‧‧‧散熱板 45‧‧‧heat plate
45A、45B‧‧‧開口 45A, 45B‧‧‧ openings
51A、51B‧‧‧不透明樹脂 51A, 51B‧‧‧ opaque resin
60‧‧‧空間 60‧‧‧ space
Claims (11)
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| JP2012138589 | 2012-06-20 | ||
| PCT/JP2013/057074 WO2013190871A1 (en) | 2012-06-20 | 2013-03-13 | Light source-integrated optical sensor |
| PCT/JP2013/066919 WO2013191235A1 (en) | 2012-06-20 | 2013-06-20 | Light source-integrated optical sensor |
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| TW201401541A true TW201401541A (en) | 2014-01-01 |
| TWI581449B TWI581449B (en) | 2017-05-01 |
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| JP (2) | JP6133287B2 (en) |
| CN (1) | CN104396026B (en) |
| TW (1) | TWI581449B (en) |
| WO (2) | WO2013190871A1 (en) |
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| TWI744845B (en) * | 2020-03-06 | 2021-11-01 | 大陸商弘凱光電（深圳）有限公司 | Sensor module |
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| CN104396026B (en) | 2017-06-30 |
| JPWO2013191235A1 (en) | 2016-05-26 |
| JP6133287B2 (en) | 2017-05-24 |
| TWI581449B (en) | 2017-05-01 |
| CN104396026A (en) | 2015-03-04 |
| WO2013191235A1 (en) | 2013-12-27 |
| JP2017098571A (en) | 2017-06-01 |
| WO2013190871A1 (en) | 2013-12-27 |
| JP6312872B2 (en) | 2018-04-18 |
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