WO2013115353A1 - Substrat et procédé de traitement de substrat - Google Patents

Substrat et procédé de traitement de substrat Download PDF

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Publication number
WO2013115353A1
WO2013115353A1 PCT/JP2013/052327 JP2013052327W WO2013115353A1 WO 2013115353 A1 WO2013115353 A1 WO 2013115353A1 JP 2013052327 W JP2013052327 W JP 2013052327W WO 2013115353 A1 WO2013115353 A1 WO 2013115353A1
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Prior art keywords
substrate
laser
single crystal
focusing
modified layer
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PCT/JP2013/052327
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English (en)
Japanese (ja)
Inventor
利香 松尾
鈴木　秀樹
国司　洋介
順一 池野
Original Assignee
信越ポリマー株式会社
国立大学法人埼玉大学
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Application filed by 信越ポリマー株式会社, 国立大学法人埼玉大学 filed Critical 信越ポリマー株式会社
Publication of WO2013115353A1 publication Critical patent/WO2013115353A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
    • B23K26/0617—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis and with spots spaced along the common axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/1224—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Definitions

  • the present invention relates to a substrate such as a silicon single crystal substrate and a substrate processing method.
  • the semiconductor wafer manufactured in this manner is sequentially subjected to various processes such as formation of a circuit pattern and the like in the previous process and is subjected to the subsequent process, and the back surface is subjected to back grinding in the subsequent process to achieve thinning.
  • the thickness is adjusted to about 750 ⁇ m to 100 ⁇ m or less, for example, about 75 ⁇ m or 50 ⁇ m.
  • the semiconductor wafer in the prior art is manufactured as described above, and the ingot is cut by a wire saw, and a cutting margin equal to or greater than the thickness of the wire saw is required at the time of cutting. There is a problem that it is very difficult to manufacture and the product rate is not improved.
  • a processed layer with a thickness of about 100 ⁇ m was formed inside the silicon substrate. For this reason, in the case of slicing a large number of thin substrates having a thickness of about 0.1 mm from a crystalline substrate, the material yield is limited. Further, for example, even when the aberration enhancing material for infrared observation for silicon was removed, the thickness of the processed layer could not be greatly reduced.
  • a wafer will be referred to as a substrate unless otherwise stated.
  • JP 2008-200772 A JP, 2005-297156, A JP, 2011-60862, A
  • the present invention has been made to the above problems, and it is a substrate and processing method for forming an internal processing layer by laser light irradiation inside a crystalline substrate, and peeling off the internal processing layer as boundaries,
  • An object of the present invention is to provide a substrate and a substrate processing method for forming an internal processing layer efficiently by wide choice of light sources, thin thickness of the internal processing layer, and irradiation with a small number of laser pulses.
  • a substrate according to the present invention is a single crystal substrate, and the substrate is formed therein with a periodic structure having a crystal orientation different from the crystal orientation of the substrate. It has a modified layer, and the periodic structure is connected.
  • the periodic structure is formed by irradiating a laser beam toward the surface of the substrate by a laser focusing unit, and the laser focusing unit is axially symmetric about the laser beam within the substrate. And the light incident on the outer peripheral portion of the laser condensing means is condensed on the laser condensing means side from the light incident on the inner peripheral portion of the laser condensing means Is preferred.
  • the periodic structure is preferably formed by moving the laser focusing means and the substrate relative to each other and irradiating the substrate with the laser beam by the laser focusing means.
  • the periodic structure is formed by phase-changing the focusing point of the laser light on the substrate.
  • the modified layer preferably has a predetermined thickness and is formed at a predetermined depth from the surface of the single crystal substrate.
  • the modified layer is preferably formed parallel to the surface of the substrate.
  • a plurality of the modifying layers be formed in parallel with the surface of the substrate.
  • the surface of the substrate is preferably a mirror surface.
  • the substrate is preferably a silicon single crystal substrate or a silicon carbide single crystal substrate.
  • the substrate processing method comprises the steps of: providing a single crystal substrate; and irradiating the inside of the substrate with the crystal orientation of the substrate by irradiating the surface of the substrate with laser light toward the surface of the substrate. And B. forming a modified layer in which a periodic structure having a crystal orientation different from that of the above is formed, and the laser condensing means condenses the laser light axially symmetrically with respect to the optical axis, and Inside, the light incident on the outer peripheral portion of the laser condensing means is configured to condense light on the laser condensing means side from the light incident on the inner peripheral portion of the laser condensing means is there.
  • the periodic structure is formed by phase-changing the focusing point of the laser light on the substrate.
  • the modified layer preferably has a predetermined thickness and is formed at a predetermined depth from the surface of the single crystal substrate.
  • the modified layer is preferably formed parallel to the surface of the substrate.
  • a plurality of the modifying layers be formed in parallel with the surface of the substrate.
  • the surface of the substrate is preferably a mirror surface.
  • the substrate is preferably a silicon single crystal substrate or a silicon carbide single crystal substrate.
  • FIG. 5 is a photograph showing a cross section of the internal modified layer of Example 1.
  • 7 is a photograph showing a cross section on the surface side of Example 2.
  • FIG. 7 is a photograph showing a cross section on the back side of Example 2.
  • FIG. 15 is a photograph showing a cross section on the surface side of Example 3.
  • 15 is a photograph showing a cross section on the back side of Example 3.
  • 15 is a photograph showing a cross section on the surface side of Example 4.
  • 15 is a photograph showing a cross section on the back side of Example 4. It is a photograph which shows the cross section by the side of the surface of comparative example 1. It is a photograph which shows the cross section by the side of the back of comparative example 1. It is a photograph which shows the cross section by the side of the surface of comparative example 2. It is a photograph which shows the cross section by the side of the back of comparative example 2.
  • FIG. 1 is a perspective view showing the configuration of a substrate internal processing apparatus 100.
  • the substrate internal processing apparatus 100 has a stage 110, a stage support portion 120 for supporting the stage 110 so as to be movable in the X and Y directions, and a substrate fixture 130 disposed on the stage 110 for securing the substrate 10. ing.
  • the substrate internal processing apparatus 100 has a laser light source 150 and a laser condensing unit 160.
  • the laser condensing unit 160 condenses the laser light 190 emitted from the laser light source 150 and irradiates it toward the substrate 10.
  • the laser focusing unit 160 has an objective lens 170 and a plano-convex lens 180.
  • FIG. 2 is a top view showing the substrate 10 placed on the stage 110.
  • FIG. 3 is a cross-sectional view showing the substrate 10 placed on the stage 110. As shown in FIG.
  • the substrate 10 is held by the substrate fixture 130 on the stage 110.
  • the substrate fixture 130 secures the substrate 10 by means of a fixture table 125 provided thereon.
  • a normal adhesive layer, a mechanical chuck, an electrostatic chuck or the like can be applied.
  • the condensing point P of the laser beam 190 condensed and irradiated onto the substrate 10 is horizontal to the surface by forming a locus 12 of a predetermined shape in a region of a predetermined depth from the surface inside the substrate 10
  • a two-dimensional internal modified layer 14 can be formed in the direction.
  • FIG. 4 is a view for explaining the formation of the internal reforming layer 14 in the substrate 10.
  • the laser beam 190 is irradiated toward the substrate 10 via the objective lens 170 and the plano-convex lens 180 of the laser focusing unit 160, and is focused inside the substrate 10.
  • the laser beam 190 emitted from the laser condensing unit 160 is axially symmetric with respect to the optical axis thereof, and the component 190b on the outer peripheral side of the laser beam 190 in the substrate 10
  • the condensing point P2 at which the light beams intersect is configured to be closer to the laser condensing unit 160 than the condensing point P1 at which the light beam of the component on the inner peripheral side 190a of the laser light 190 intersects.
  • the focusing point P2 of the component 190b on the outer circumferential side of the laser beam 190 is from the focusing point 190b on the inner circumferential side 190a of the laser beam 190. Also, it is at a shallow position from the surface of the substrate 10, that is, the objective lens 170 and the plano-convex lens 180 side.
  • This state can be regarded as a state in which the aberration generated in the laser beam 190 by the substrate 10 is excessively corrected, and it can be said that it is a "focused state” in which the focus is excessively corrected.
  • Such a state makes it possible to substantially reduce the diameter of the laser beam in a certain depth range of the substrate 10, and to secure an energy density sufficient for forming the internal modification layer 14 in that range.
  • the internal modified layer 14 is formed of polycrystalline silicon formed by changing the bonding state by melting and then cooling the silicon single crystal by condensing and irradiating the substrate 10 with the laser beam 190. It has polycrystalline grains.
  • the internally modified layer 14 thus formed has a periodic structure having a polycrystal whose crystal orientation is different from the crystal orientation of the silicon single crystal by irradiating the laser light 190 at periodic intervals. It is. Needless to say, polycrystals of different crystal orientations are also made of silicon of the same element as the silicon single crystal.
  • the internal modified layer 14 be exposed at the end of the substrate 10 in order to improve the yield in the cutting step described later.
  • the method of exposing the internal modification layer 14 may use cleavage of crystal orientation or laser light 190.
  • FIG. 5 is a diagram showing the first embodiment.
  • the laser focusing unit 160 is represented by the plano-convex lens 180 and the optical axis is described in the lateral direction, but the laser beam focusing is performed by the entire laser focusing unit 160 including the plano-convex lens 180 It is a thing.
  • the laser beam 190 condensed by the laser condensing unit 160 is irradiated toward the surface of the substrate 10.
  • the laser beam 190 is refracted by the substrate 10, and the component on the outer peripheral side located high from the optical axis condenses at a position shallower from the surface of the substrate 10 than the component on the inner peripheral side located lower from the optical axis. ing.
  • the light on the outer peripheral side is condensed at a position closer to the laser condensing unit 190 than the light on the inner peripheral side.
  • the position of the laser focusing unit 160 with respect to the substrate 10 can be moved by a focusing adjustment unit (not shown).
  • the focusing adjustment unit adjusts the focusing position, the focusing shape, and the like of the laser beam 190 on the substrate 10 by adjusting the distance between the laser focusing unit 160 and the substrate 10 as described later.
  • Such a focusing adjustment unit can be easily realized using the prior art.
  • FIG. 6 is a view for explaining the second embodiment of the irradiation of the laser light to the substrate.
  • the distance between the laser focusing unit 160 and the substrate 10 is larger than in the first embodiment, and the laser beam 190 focused by the laser focusing unit 160 focuses on the surface of the substrate 10. It is adjusted by the condensing adjustment part so that
  • the distance between the laser condensing unit 190 and the surface of the substrate 10 is shortened by a predetermined value from the initial state in which the laser light 190 is focused on the surface of the substrate 10 in the second embodiment
  • Such initial setting can be performed not only on the front surface of the substrate 10 but also on the back surface of the substrate 10 with focus.
  • FIG. 7 is a reference view for explaining the aberration in the substrate.
  • This reference drawing shows an aberration that occurs when the laser focusing unit 160 is not provided, in contrast to the first embodiment. For example, the case where only a normal objective lens is installed corresponds.
  • the laser light 190 is focused with the surface of the substrate 10 as the focal point. From this state, the substrate 10 is moved in the incident direction along the optical axis so that the laser light 190 is condensed in the substrate 10.
  • the component on the outer peripheral side of light having a high height from the optical axis is deeper from the surface of the substrate 10 than the component on the inner peripheral side having a low height from the optical axis. It will collect light at the position.
  • This state corresponds to the first embodiment in which the component on the outer peripheral side where the height from the optical axis is high condenses at a position shallower than the component on the inner peripheral side where the height from the optical axis is low.
  • the depth of the focusing point on the substrate 10 is in the reverse relationship.
  • the first embodiment in which the component on the outer peripheral side condenses at a position shallower than the component on the inner peripheral side can be realized for the first time by providing the laser condensing unit 160.
  • FIG. 8 is a view showing a third embodiment of the irradiation of the laser light to the substrate.
  • adjustment is made to shorten the distance between the laser focusing unit 160 and the surface of the substrate 10 by a focusing point adjusting unit (not shown), and the laser beam 190 is made near the back surface of the substrate 10 in the substrate 10. It adjusted so that the condensing point of (1) was formed. Due to this focusing point, an internal modified layer 14 is formed parallel to the surface of the substrate 10 near the back surface of the substrate 10.
  • FIG. 9 is a view showing a fourth embodiment of irradiation of a laser beam on a substrate.
  • the laser focusing portion 160 and the surface of the substrate 10 are formed by focusing point adjustment means not shown.
  • the focal point of the laser beam 190 is formed near the surface of the substrate 10 in the substrate 10.
  • the second internal modified layer 14 b is formed in parallel to the surface of the substrate 10 near the surface of the substrate 10 by this focusing point.
  • the internal reforming layer 14 is not limited to two layers as in the fourth embodiment, but may be a plurality of two or more layers.
  • FIG. 10 is a front view showing a cutting apparatus.
  • the substrate 10 on which the internal reforming layer 14 is formed according to the third or fourth embodiment is cleaved in the internal reforming layer 14 using this cleaving apparatus.
  • a structure 40 in which the first and second metal plates 20 and 21 are adhered to both sides of the substrate 10 with an adhesive is placed on the mount 52.
  • the adhesive may be any adhesive that is stronger than the cohesion of the polycrystalline grains forming the region near the internal reforming layer 14 of the substrate 10, and, for example, an anaerobic acryl-based adhesive that cures using metal ions as a reaction initiator
  • An adhesive 25 consisting of a liquid monomer component can be used.
  • the structure 40 may be fixed to the gantry 52 using a through hole provided in the second metal plate 21. In this state, a downward pressing force is applied to the first metal plate 20 by the cutting jig 54. Thereby, the substrate 10 receives opposite forces in the direction of both the upper surface and the lower surface bonded to the first and second metal plates 20 and 21, and when the force exceeds a predetermined threshold, the substrate 10 is divided, The structure 40 is separated into upper and lower two.
  • FIG. 11 is a view for explaining a method of peeling the substrate 10 from the metal plate 20 in water.
  • the substrate 10 adhered to the metal plates 20 and 21 with the adhesive 25 is immersed in warm water of 80 to 100 ° C. stored in the water tank 60.
  • the adhesive 25 reacts with water to cause a predetermined reaction, and the adhesive force is lost from the adhesive 25. Therefore, the substrate 25 is separated from the metal plates 20 and 21 by peeling the adhesive 25 from the substrate 10 in water. It can be separated.
  • the process of cutting the substrate 10 may be repeated a plurality of times to divide the substrate 10 into a plurality of internal reforming layers. it can.
  • FIG. 12 is a diagram illustrating a specific example of the laser focusing unit.
  • the laser focusing unit 160 is realized by, for example, a combination of an objective lens 170 with a high NA and a long working distance and a plano-convex lens 180 provided on the surface side of the substrate 10.
  • a focusing point adjustment unit (not shown) adjusts the shape of the focusing point by the distance between the plano-convex lens 80 and the surface of the substrate 10, and the distance between the objective lens 170 and the surface of the substrate 10 Can be configured to adjust the position of the focusing point.
  • FIG. 13 is a view showing another specific example of the laser focusing portion.
  • the laser is provided in the substrate 10 by setting the correction ring to 0.6 mm when the internal processing layer 14 is provided 300 ⁇ m from the surface of the crystal 10.
  • the light incident on the outer peripheral portion of the light collecting portion 160 can be set so as to be condensed on the side of the laser condensing 160 from the light incident on the inner peripheral portion.
  • the configuration of the device can be configured by a single objective lens with a correction ring, without requiring a plurality of components such as the objective lens 170 and the plano-convex lens 180 as in the above-described embodiments. Is easy and easy to operate.
  • a beam diameter adjusting means such as an iris diaphragm or a beam expander is provided on the incident side of the laser focusing portion 160 It may reduce the amount of light.
  • Example 1 as the laser light source 150 of the substrate internal processing apparatus 100, one having a wavelength of 1064 nm, a repetition frequency of 200 kHz, an output of 1.6 W, and a pulse width of 10 nm was used.
  • the substrate 10 consisting of
  • the objective lens 200 was moved toward the surface of the substrate 10 by 0.06 mm on the basis of this position.
  • the setting of the correction ring 210 is 0.6 mm
  • the stage 110 is moved at a speed of 200 mm / s in the x direction, and 10 m is repeatedly fed 10 times in the y direction.
  • Laser light 190 was directed at 10 ⁇ m intervals in a straight line, and 10 straight lines were irradiated.
  • the substrate 10 was cleaved at right angles to the linear irradiation direction, and the cross section was observed. As a result, as shown in FIG. 14, it was confirmed that the length of the processing area was 30 ⁇ m and the processing marks adjacent to each other were connected to a depth of 0.3 mm from the surface on the mirror surface side of the substrate 10.
  • This processing mark is a single crystal structure changed to a polycrystalline structure (phase change) due to melting and cooling by laser irradiation, and contains a crystal having a crystal orientation different from that of the single crystal, and is a region of the polycrystalline structure Constitute an internal working layer 14 having a periodic structure connected with each other.
  • the surface of the substrate 10 refers to the main surface of the substrate 10 facing the laser focusing portion 160, and the main surface of the substrate 10 opposite to the laser focusing portion 160 is referred to as the back surface.
  • FIG. 15 is an enlarged photograph of the divided surface on the surface side with a scanning electron microscope.
  • FIG. 16 is an enlarged photograph of the divided surface on the back side with a scanning electron microscope.
  • the internal processing layer 14 With a wavelength of 1064 nm as the laser light source 150, an infrared objective lens with a repetition frequency of 200 kHz and a numerical aperture of 0.85 as the laser focusing portion 160, an output of 0.8 W after the objective lens, and a pulse width of 39 ns
  • FIG. 17 is an enlarged photograph of the divided surface on the surface side with a scanning electron microscope.
  • FIG. 18 is an enlarged photograph of the divided surface on the back side with a scanning electron microscope.
  • FIG. 19 is an enlarged photograph of the divided surface on the surface side with a scanning electron microscope.
  • FIG. 20 is an enlarged photograph of the divided surface on the back side with a scanning electron microscope.
  • Comparative Example 1 A fiber laser A with a wavelength of 1064 nm as the laser light source 150, an infrared objective lens with a repetition frequency of 200 kHz and a numerical aperture of 0.85 as the laser focusing portion 160, an output of 1.2 W after the objective lens, and a pulse width of 39 ns Laser light 190 directed to a region of 5 mm ⁇ 10 mm on the surface 10 of silicon single crystal substrate 10 with a laser irradiation interval of 1 ⁇ m, an offset of 1 ⁇ m, an offset of 1 ⁇ m, DF 80 ⁇ m in air conversion, silicon aberration correction ring 0.6 mm and thickness of 725 ⁇ m To form the internal processing layer 14.
  • FIG. 21 is an enlarged photograph of the divided surface on the surface side with a scanning electron microscope.
  • FIG. 22 is an enlarged photograph of the divided surface on the back side with a scanning electron microscope.
  • Comparative Example 2 A fiber laser B with a wavelength of 1064 nm as the laser light source 150, an infrared objective lens with a repetition frequency of 200 kHz and a numerical aperture of 0.85 as the laser focusing portion 160, an output of 0.6 W after the objective lens, and a pulse width of 60 ns Laser light 190 directed to a region of 5 mm ⁇ 10 mm on the surface 10 of silicon single crystal substrate 10 with a laser irradiation interval of 1 ⁇ m, an offset of 1 ⁇ m, an offset of 1 ⁇ m, DF 80 ⁇ m in air conversion, silicon aberration correction ring 0.6 mm and thickness of 725 ⁇ m To form the internal processing layer 14.
  • FIG. 23 is an enlarged photograph of the divided surface on the surface side with a scanning electron microscope.
  • FIG. 24 is an enlarged photograph of a divided surface on the back side with a scanning electron microscope.
  • Examples 2 to 4 processing marks of a periodic structure are formed in the internal processing layer 14 as in Example 1, and the processing area is The length is as short as 30 ⁇ m, and adjacent processing marks are formed in connection.
  • the internal modified layer 14 having the processing marks formed by being connected in this way is stepped, a smooth cross section having a periodic structure can be obtained. Therefore, it is not necessary to further polish, and it is possible to reduce the number of man-hours required for another process such as a wet process such as chemical etching or laser etching and the influence of impurity contamination associated therewith.
  • the internal processing layer 14 formed by connecting adjacent processing marks having a short length of the processing area as in the first to fourth embodiments is a component on the outer peripheral side of the laser beam 190 inside the substrate 10
  • the present invention can be similarly applied to, for example, silicon carbide (SiC) or the like.
  • the substrate can be efficiently thinly formed by the substrate processing apparatus and method of the present invention, if the thinly cut substrate is a Si substrate, it can be applied to a solar cell, and a GaN-based semiconductor device etc. It can be applied to light emitting diodes, laser diodes, etc. if it is a sapphire substrate etc., it can be applied to SiC power devices etc if it is SiC etc, and it can be widely used in the transparent electronics field, lighting field, hybrid / electric car field etc. It is applicable in the field.

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  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

L'invention concerne un substrat de silicium mince pour lequel un taux de produit est maintenu. L'invention concerne un substrat monocristallin (10) comprenant une couche modifiée (14) comprenant des structures périodiques présentant une orientation cristalline différente de l'orientation cristalline du substrat (10) formé à l'intérieur, lesdites structures périodiques étant raccordées.
PCT/JP2013/052327 2012-02-01 2013-02-01 Substrat et procédé de traitement de substrat WO2013115353A1 (fr)

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CN107953034A (zh) * 2016-10-14 2018-04-24 株式会社迪思科 贴合基板的加工方法
EP3396031A1 (fr) * 2017-04-26 2018-10-31 Shin-Etsu Polymer Co., Ltd. Procédé de fabrication de substrats
CN113770564A (zh) * 2015-01-15 2021-12-10 西尔特克特拉有限责任公司 在固体中产生分离区域的方法和从固体中分离出固体部分的方法

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JP6887641B2 (ja) * 2017-03-30 2021-06-16 国立大学法人埼玉大学 ガラススライシング方法
JP6943388B2 (ja) * 2017-10-06 2021-09-29 国立大学法人埼玉大学 基板製造方法
JP7121941B2 (ja) * 2018-03-09 2022-08-19 国立大学法人埼玉大学 基板製造方法
US20220181157A1 (en) * 2019-04-19 2022-06-09 Tokyo Electron Limited Processing apparatus and processing method
TW202107553A (zh) 2019-07-18 2021-02-16 日商東京威力科創股份有限公司 處理裝置及處理方法
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CN107953034A (zh) * 2016-10-14 2018-04-24 株式会社迪思科 贴合基板的加工方法
EP3396031A1 (fr) * 2017-04-26 2018-10-31 Shin-Etsu Polymer Co., Ltd. Procédé de fabrication de substrats
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