WO2012128317A1 - 半導体ウエハ等加工用粘着テープ - Google Patents
半導体ウエハ等加工用粘着テープ Download PDFInfo
- Publication number
- WO2012128317A1 WO2012128317A1 PCT/JP2012/057333 JP2012057333W WO2012128317A1 WO 2012128317 A1 WO2012128317 A1 WO 2012128317A1 JP 2012057333 W JP2012057333 W JP 2012057333W WO 2012128317 A1 WO2012128317 A1 WO 2012128317A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- base layer
- antistatic agent
- semiconductor wafer
- dicing tape
- adhesive layer
- Prior art date
Links
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L23/10—Homopolymers or copolymers of propene
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/241—Polyolefin, e.g.rubber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/04—Antistatic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/16—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the structure of the carrier layer
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2421/00—Presence of unspecified rubber
- C09J2421/006—Presence of unspecified rubber in the substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2423/00—Presence of polyolefin
- C09J2423/10—Presence of homo or copolymers of propene
- C09J2423/106—Presence of homo or copolymers of propene in the substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2453/00—Presence of block copolymer
- C09J2453/006—Presence of block copolymer in the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2852—Adhesive compositions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2852—Adhesive compositions
- Y10T428/2878—Adhesive compositions including addition polymer from unsaturated monomer
Definitions
- the present invention relates to an adhesive tape for processing a semiconductor wafer or the like.
- This application claims priority based on Japanese Patent Application No. 2011-065515 filed in Japan on March 24, 2011, the contents of which are incorporated herein by reference.
- dicing tapes various adhesive tapes for processing semiconductor wafers (hereinafter referred to as “dicing tapes”) used for dicing processing of semiconductor wafers and packaged products.
- a dicing tape an adhesive layer is formed on a base layer, and a semiconductor wafer or the like is fixed by the adhesive layer.
- a photocurable resin, a photopolymerization initiator, a crosslinking agent, and the like are usually added to the adhesive layer so that semiconductor chips can be easily picked up after dicing processing of a semiconductor wafer or the like.
- the adhesive layer is irradiated with light, these components are cured, the adhesiveness of the adhesive layer is lowered, and the semiconductor chip can be easily picked up.
- the dicing tape is easily charged when the separator is peeled off from the dicing tape or when the blade and the dicing tape come into contact with each other during dicing.
- the dicing tape may be charged when the dicing tape is removed from the suction table after dicing or when a chip or package is picked up.
- Patent Document 1 discloses a dicing tape having an adhesive layer on one side of a base material layer and an antistatic layer containing a friction reducing agent on the other side. This dicing tape can suppress charging by an antistatic layer.
- the antistatic layer which is a layer exposed to the outside, may be peeled off from the base material layer by rubbing in contact with a machine or the like. Therefore, there is a possibility that the above dicing tape cannot stably suppress charging.
- An object of the present invention is to provide an adhesive tape for processing a semiconductor wafer or the like that can stably suppress charging.
- An adhesive tape for processing a semiconductor wafer or the like includes a base layer and an adhesive layer.
- the adhesive layer is formed on the base layer.
- the adhesive layer contains a curing component that cures the adhesive layer.
- the base layer is mainly made of a resin.
- a polymer type antistatic agent is kneaded and dispersed.
- the MFR of the polymer antistatic agent is 10.0 g / 10 min or more and 15.0 g / 10 min or less when measured under the measurement conditions of 190 ° C. and 21.18 N in accordance with JIS K7210.
- This polymer type antistatic agent is kneaded into a resin and dispersed in a base layer. For this reason, even if the base layer comes into contact with a machine and rubs, the polymer antistatic agent is unlikely to fall off from the base layer. Therefore, this adhesive tape for processing such as a semiconductor wafer can stably suppress charging. Furthermore, this polymer type antistatic agent has a longer molecular chain that exhibits an antistatic effect than conventional antistatic agents that are not of a polymer type. Therefore, this processing adhesive tape for semiconductor wafers, etc. has good antistatic performance.
- the adhesive tape for processing a semiconductor wafer or the like having a MFR value of the polymer type antistatic agent of 10.0 g / 10 min or more can suppress a decrease in processability.
- the pressure-sensitive adhesive tape for processing a semiconductor wafer or the like whose MFR value of the polymer antistatic agent is 15.0 g / 10 min or less can suppress a decrease in the adhesive strength of the adhesive layer.
- the 1% decay time at an applied voltage of ⁇ 5000 V is preferably within 0.15 seconds.
- the 1% decay time of the adhesive tape for processing a semiconductor wafer or the like at an applied voltage of ⁇ 5000 V is within 0.15 seconds.
- the 1% decay time refers to the time taken for the voltage of the adhesive tape for processing a semiconductor wafer or the like to decay from 5000V to 50V, or the time taken to decay from -5000V to -50V.
- This adhesive tape for processing a semiconductor wafer or the like tends to have a shorter decay time than a conventional adhesive tape for processing a semiconductor wafer or the like. Therefore, this adhesive tape for processing a semiconductor wafer or the like can further suppress charging.
- the melting point of the polymer antistatic agent is preferably 140 ° C. or higher.
- This polymer antistatic agent has a higher melting point than conventional polymer antistatic agents.
- this polymer type antistatic agent the melt viscosity of the base layer is increased, so that the extrudability of the base layer is improved. Furthermore, the occurrence of bleeding or contamination of low molecular weight components is suppressed.
- the resin is preferably a mixture of polypropylene and an elastomer.
- the resin is preferably a mixture of polyethylene and an elastomer.
- the pressure-sensitive adhesive tape for processing a semiconductor wafer or the like described in (1) to (5) above preferably contains 100 ppm or less of a cation and 100 ppm or less of an anion in a weight ratio with respect to the polymer antistatic agent.
- the adhesive tape for processing a semiconductor wafer or the like according to the present invention can stably suppress charging.
- an adhesive tape 100 for processing a semiconductor wafer or the like (hereinafter referred to as “dicing tape”) 100 according to an embodiment of the present invention mainly includes a base layer 200 and an adhesive layer 300.
- the base layer 200 and the adhesive layer 300 will be described in detail.
- the base layer 200 is mainly made of a material resin into which a polymer type antistatic agent is kneaded.
- the base layer 200 plays a role of supporting the adhesive layer 300.
- the base layer 200 has a strength that can withstand stretching in the expanding process performed after the dicing process.
- the expanding process is a process of extending the dicing tape 100 and extending the chip interval. The purpose of this expanding process is to increase chip recognition during pick-up and to prevent device damage due to contact between adjacent chips.
- Material resin is formed into a film by a normal film forming method.
- the material resin is not particularly limited as long as it transmits light (visible light, near infrared light, ultraviolet light, X-ray, electron beam, etc.).
- a material resin it is preferable to use a mixture of polypropylene and an elastomer or a mixture of polyethylene and an elastomer because of compatibility with a polymer antistatic agent.
- a mixture of polypropylene and elastomer or a mixture of polyethylene and elastomer is particularly preferably used because it gives particularly excellent elongation to the dicing tape and has a high effect of suppressing breakage during the expanding process.
- dicing tape using a mixture of polypropylene and elastomer or a mixture of polyethylene and elastomer is excellent in heat resistance, hardly melts in an environment such as 80 ° C., and is stored at a high temperature (about 60 ° C.
- the elastomer is preferably a block copolymer comprising a polystyrene segment represented by the general formula (1) and a vinyl polyisoprene segment represented by the general formula (2).
- n is an integer of 2 or more
- n is an integer of 2 or more
- the polymer antistatic agent is a polyether / polyolefin block polymer containing 100 ppm or less of cations and 100 ppm or less of anions in a weight ratio with respect to the polymer antistatic agent.
- the polymer antistatic agent contains 90 ppm or less of cations and 90 ppm or less of anions in a weight ratio with respect to the polymer antistatic agent, and preferably contains 80 ppm or less of cations, And it is more preferable to contain 80 ppm or less of anions.
- the adhesive layer 300 is a polymer type antistatic agent. Not easily contaminated by ions. Moreover, by containing 100 ppm or less of cations and containing 100 ppm or less of anions, circuit defects in semiconductors are reduced, and the adhesive strength during high-temperature storage during transportation and the like is stabilized.
- this polymer type antistatic agent there are a low ion elution type in which ion elution is less than that of a conventional polymer type antistatic agent, or an ion free type in which ions are not substantially eluted.
- the cations contained in the polymer antistatic agent are sodium ions, potassium ions and the like, and the anions are sulfate ions and the like.
- the melt mass flow rate (hereinafter referred to as “MFR”) of the polymer antistatic agent is 10.0 g / 10 min or more and 15.0 g / when measured under the measurement conditions of 190 ° C. and 21.18 N in accordance with JIS K7210. It is preferably 10 min or less, and more preferably 12.0 g / 10 min or more and 14.0 g / 10 min or less.
- MFR melt mass flow rate
- the melting point of the polymer antistatic agent is preferably 140 ° C. or higher, more preferably 150 ° C. or higher, and further preferably 160 ° C. or higher. When the melting point of the polymer antistatic agent is 140 ° C. or higher, the extrudability of the base layer 200 is good.
- the thickness of the base layer 200 is not particularly limited, but is preferably 50 ⁇ m or more and 300 ⁇ m or less, and more preferably 80 ⁇ m or more and 200 ⁇ m or less.
- the dicing tape 100 is excellent in workability in the dicing process or the expanding process.
- the production method of the base layer 200 is not particularly limited, and general molding methods such as a calendar method and an extrusion molding method are used.
- the surface of the base layer 200 is preferably exposed with a functional group that reacts with the material constituting the adhesive layer 300, such as a hydroxyl group or an amino group.
- the surface of the base layer 200 is preferably surface-treated with a corona treatment or an anchor coat.
- the adhesive layer 300 serves to adhere and support a semiconductor wafer or the like in the dicing process.
- the adhesive layer 300 can easily peel off a cut piece such as a semiconductor wafer.
- the adhesive layer 300 is usually protected with a release film.
- the adhesive layer 300 is formed on one surface of the base layer 200 (see FIG. 1).
- the resin solution that is the material of the adhesive layer 300 is usually applied to the base layer 200 by an application method such as die coating, curtain die coating, gravure coating, comma coating, bar coating, or lip coating.
- the thickness of the adhesion layer 300 after drying is not specifically limited, It is preferable that they are 5 micrometers or more and 30 micrometers or less, and it is more preferable that they are 10 micrometers or more and 20 micrometers or less.
- the pressure-sensitive adhesive layer 300 after drying When the thickness of the pressure-sensitive adhesive layer 300 after drying is 5 ⁇ m or more and 30 ⁇ m or less, the pressure-sensitive adhesive layer 300 has a good pressure-sensitive adhesive force and has a good peelability after being irradiated with ultraviolet rays or an electron beam. .
- the adhesive layer 300 is mainly composed of a base resin and a curing component that cures the adhesive layer 300.
- the adhesive layer 300 may contain an antistatic agent and a tackifier as optional components. Hereinafter, each component will be described in detail.
- Base resin As the base resin, a known resin used as an adhesive layer component such as an acrylic resin, a silicon resin, or a urethane resin can be used. From the viewpoint of heat resistance and cost, an acrylic resin is used. It is preferable to use it.
- the curing component cures when irradiated with light, for example.
- the base resin is incorporated into the crosslinked structure of the curing component, and as a result, the adhesive strength of the adhesive layer 300 is reduced.
- a curing component for example, a low molecular weight compound having at least two polymerizable carbon-carbon double bonds that can be three-dimensionally crosslinked by irradiation of energy rays such as ultraviolet rays and electron beams is used.
- the curing component is not particularly limited.
- trimethylolpropane triacrylate tetramethylolmethane tetraacrylate
- pentaerythritol triacrylate pentaerythritol tetraacrylate
- dipentaerythritol monohydroxypentaacrylate dipentaerythritol hexaacrylate.
- aromatic and aliphatic urethane acrylates (oligomers) and the like are used.
- urethane acrylate is preferred.
- the curing component is not particularly limited, but it is preferable that two or more curing components having different weight average molecular weights are mixed. This is because if such a curing component is used, the degree of cross-linking of the resin by light irradiation can be controlled to improve the pickup property.
- a curing component for example, a mixture of a first curing component and a second curing component having a weight average molecular weight larger than that of the first curing component may be used.
- the curing component may contain a photopolymerization initiator, a crosslinking agent, and the like.
- the photopolymerization initiator is added to facilitate the initiation of polymerization of the curing component.
- photopolymerization initiators include 2,2-dimethoxy-1,2-diphenylethane-1-one, benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyldiphenyl sulfide, and tetramethylthiuram. Examples thereof include monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl, ⁇ -chloranthraquinone and the like.
- the curing component is preferably blended in an amount of 20 to 200 parts by weight, more preferably 50 to 150 parts by weight, based on 100 parts by weight of the base resin.
- crosslinking agent examples include an epoxy crosslinking agent, an isocyanate crosslinking agent, a methylol crosslinking agent, a chelate crosslinking agent, an aziridine crosslinking agent, a melamine crosslinking agent, and a polyvalent metal chelating crosslinking agent.
- an isocyanate type crosslinking agent is preferable.
- the trimer of the terminal isocyanate compound obtained by making the polyisocyanate compound of polyisocyanate, the trimer of a polyisocyanate compound, the polyisocyanate compound and a polyol compound react or examples thereof include blocked polyisocyanate compounds in which a terminal isocyanate urethane prepolymer is blocked with phenol, oximes and the like.
- polyvalent isocyanate examples include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4′-diisocyanate, diphenylmethane-2 4,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate and the like.
- At least one polyisocyanate selected from the group consisting of 2,4-tolylene diisocyanate, diphenylmethane-4,4'-diisocyanate and hexamethylene diisocyanate is preferable.
- the crosslinking agent is preferably blended in an amount of 5 to 50 parts by weight with respect to 100 parts by weight of the base resin. By adjusting the blending amount of the crosslinking agent as described above, the pick-up property of the dicing tape 100 becomes suitable.
- Antistatic agent Although it does not specifically limit as an antistatic agent, Surfactants, such as anionic surfactant, a cationic surfactant, a nonionic surfactant, an amphoteric surfactant, are used, for example. It is done.
- an antistatic agent that does not exhibit temperature dependence for example, powders such as carbon black, silver, nickel, antimony-doped tin oxide, and tin-doped indium oxide are used. Among these, carbon black, silver, antimony-doped tin oxide, and tin-doped indium oxide are preferable.
- the tackifier is not particularly limited.
- rosin resin, terpene resin, coumarone resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic aromatic copolymer Polymerized petroleum resin or the like is used.
- phenol resins, aliphatic petroleum resins, aromatic petroleum resins, and aliphatic aromatic copolymer petroleum resins are preferable.
- the 1% decay time at an applied voltage of ⁇ 5000 V is within 0.15 seconds, preferably within 0.10 seconds, and more preferably within 0.05 seconds.
- the 1% decay time refers to the time taken for the voltage of the dicing tape 100 to decay from 5000V to 50V, or the time taken to decay from -5000V to -50V.
- a known method can be used as a method of using the dicing tape 100.
- the semiconductor device is cut into element pieces with a rotating round blade.
- ultraviolet light or an electron beam is irradiated from the base layer 200 side of the dicing tape 100.
- the dicing tape 100 is radially expanded using a dedicated jig to widen the distance between chips, and then the semiconductor device is pushed up with a needle or the like.
- the semiconductor device thus pushed up is picked up by suction by a vacuum collet or air tweezers, and then mounted or stored in a tray.
- the adhesive tape for processing semiconductor wafers of the present invention is used for electronics such as back grind tape and printed circuit board protection tape, window glass protection film, decorative marking film, medical and sanitary medicine base materials, etc. Is mentioned.
- ⁇ Effect in this embodiment> The polymer antistatic agent is kneaded into the resin and dispersed in the base layer 200. Therefore, even when the base layer 200 comes into contact with a machine and rubs, the polymer antistatic agent is unlikely to fall off from the base layer 200. Therefore, the dicing tape 100 can suppress charging stably. Furthermore, this polymer type antistatic agent has a longer molecular chain that exhibits an antistatic effect than conventional antistatic agents that are not of a polymer type. Therefore, the dicing tape 100 has a good antistatic performance.
- the dicing tape 100 having a MFR value of the polymer antistatic agent of 10.0 g / 10 min or more can suppress a decrease in workability. Furthermore, the dicing tape 100 having the MFR value of the polymeric antistatic agent of 15.0 g / 10 min or less can suppress a decrease in the adhesive strength of the adhesive layer 300.
- 1% decay time of dicing tape 100 at an applied voltage of ⁇ 5000 V is within 0.15 seconds.
- the 1% decay time refers to the time taken for the voltage of the dicing tape 100 to decay from 5000V to 50V, or the time taken to decay from -5000V to -50V.
- the dicing tape 100 tends to have a shorter decay time than the conventional dicing tape. Therefore, the dicing tape 100 can further suppress charging.
- This polymer antistatic agent has a higher melting point than conventional polymer antistatic agents.
- this polymer type antistatic agent the melt viscosity of the base layer 200 is increased, so that the extrudability of the base layer 200 is improved. Furthermore, the occurrence of bleeding or contamination of low molecular weight components is suppressed.
- Example 1 ⁇ Production of dicing tape>
- the material constituting the base layer 200 is 60 parts by weight of polypropylene, 40 parts by weight of a block copolymer comprising a polystyrene segment represented by the general formula (1) and a vinyl polyisoprene segment represented by the general formula (2), and 12 g of MFR.
- a polymer type antistatic agent polyether / polyolefin block polymer manufactured by Sanyo Kasei Kogyo Co., Ltd., product name: Pelestat 230
- the measurement of MFR was performed on the measurement conditions of 190 degreeC and 21.18N based on JISK7210.
- n is an integer of 2 or more
- n is an integer of 2 or more
- the kneaded material was extruded with an extruder to produce a base layer 200 with a thickness of 100 ⁇ m.
- the base resin of the adhesive layer 300 10 parts by weight of the first copolymer and 90 parts by weight of the second copolymer were prepared.
- a copolymer having a weight average molecular weight of 500,000 obtained by copolymerizing 70 parts by weight of butyl acrylate, 25 parts by weight of 2-ethylhexyl acrylate, and 5 parts by weight of vinyl acetate is obtained.
- the second copolymer is obtained by copolymerizing 50 parts by weight of 2-ethylhexyl acrylate, 10 parts by weight of butyl acrylate, 37 parts by weight of vinyl acetate, and 3 parts by weight of 2-hydroxyethyl methacrylate.
- a copolymer having a weight average molecular weight of 300,000 was used.
- a resin solution was prepared in which the base resin, the curing component, the photopolymerization initiator, and the crosslinking agent of the adhesive layer 300 were blended. This resin solution was bar-coated on the base layer 200 so that the thickness of the pressure-sensitive adhesive layer 300 after drying was 10 ⁇ m, and then dried at 80 ° C. for 5 minutes to obtain a desired dicing tape 100.
- the obtained dicing tape 100 was evaluated for the antistatic agent detachability by the cross-cut method in accordance with JIS K 5600-5-6.
- the cross-cut method a grid-like cut at 1 mm intervals was made in the dicing tape 100, and then a predetermined tape was applied to the dicing tape 100 and then peeled. The test results were classified. Based on the standard, when no grid was peeled off, “Category 0” was assigned. If the result of the cross-cut method is “Class 0”, it is indicated as “ ⁇ ”, and otherwise it is indicated as “X”.
- ⁇ Measurement of surface resistance value and volume resistance value> About the base layer 200 before the adhesive layer 300 was provided, the surface resistance value and the volume resistance value were measured using an electrostatic decay time measuring device (manufactured by electro-tech system, product name: STATIC DECAY METER MODEL406C). Regarding the surface resistance value, the surface resistance value of the surface of the base layer 200 on which the adhesive layer 300 is provided and the surface resistance value of the surface opposite to the surface were measured.
- the surface resistance value of any surface of the base layer 200 was 1.0E + 10 ⁇ / ⁇ , and the volume resistance value was 1.0E + 12 ⁇ m (see Table 1 below).
- the obtained dicing tape 100 was measured for 1% decay time according to MIL-B-81705C. Specifically, a voltage of 5000 V is applied to the dicing tape 100 using an electrostatic decay time measuring device (manufactured by electro-tech system, product name: STATIC DECAY METER MODEL406C), and the voltage of the dicing tape 100 is increased from 5000 V to 50 V. The time taken to decay was measured. This measurement was performed on the surface on the base layer 200 side and the surface on the adhesive layer 300 side of the dicing tape 100, respectively.
- the 1% decay time on the surface on the base layer 200 side was 0.04 seconds
- the 1% decay time on the surface on the adhesive layer 300 side was 0.04 seconds (see Table 1 below). ).
- Dicing tape 100 which has been passed for 7 days or more after production, was attached to a semiconductor wafer.
- the adhesive strength of the dicing tape 100 stored for 20 minutes at room temperature (hereinafter referred to as “first adhesive strength”) was measured by a 180 ° peel test.
- second adhesive strength the adhesive strength to the semiconductor wafer when stored at room temperature for 20 minutes. It was measured by.
- the 180 ° peel test is performed using a universal testing machine (manufactured by A & D Co., Ltd., product name: Tensilon) under the conditions of environmental temperature: 23 ° C., environmental pressure: normal pressure, and tensile speed: 300 mm / min. It was broken. And the average value of the obtained adhesive force chart was made into the adhesive force (cN / 25mm) of the adhesion layer 300.
- FIG. The ratio of the measured first adhesive strength to the second adhesive strength is 0.5 or more and 2.0 or less. It was evaluated with.
- the first adhesive strength was 160 cN / 25 mm
- the second adhesive strength was 120 cN / 25 mm. Therefore, the evaluation of the adhesive strength ratio of the dicing tape 100 was “good” (see Table 1 below).
- the charged voltage of the semiconductor wafer was ⁇ 6V. Therefore, the evaluation of the charged voltage of the semiconductor wafer was ⁇ (see Table 1 below).
- the visual appearance of the dicing tape 100 was uniform, and the thickness tolerance in the 1 m ⁇ 1 m range was 3 ⁇ m. Therefore, the evaluation of film processability was ⁇ (see Table 1 below).
- Example 2 A dicing tape 100 was obtained in the same manner as in Example 1 except for the following.
- a material constituting the base layer 200 a polyether type / polyolefin block polymer (manufactured by Sanyo Chemical Industries, Ltd., product name: Pelestat 212) as a polymer type antistatic agent having an MFR of 12 g / 10 min was prepared.
- the result of the cross-cut method of the dicing tape 100 according to this example was “Class 0”, and the evaluation of the antistatic agent detachability was “good”.
- the surface resistance value of any surface of the base layer 200 was 1.0E + 11 ⁇ / ⁇ , and the volume resistance value was 1.0E + 13 ⁇ m.
- the 1% decay time on the surface on the base layer 200 side was 0.02 seconds, and the 1% decay time on the surface on the adhesive layer 300 side was 0.02 seconds.
- the first adhesive strength was 150 cN / 25 mm
- the second adhesive strength was 110 cN / 25 mm
- the evaluation of the adhesive strength ratio of the dicing tape 100 was “good”.
- the charged voltage of the semiconductor wafer was ⁇ 4 V, and the evaluation of the charged voltage of the semiconductor wafer was “good”.
- the visual appearance of the dicing tape 100 was uniform, the thickness tolerance in the 1 m ⁇ 1 m range was 3 ⁇ m, and the film processability was evaluated as “good” (see Table 1 below).
- Example 1 A dicing tape was obtained in the same manner as Example 1 except for the following.
- an antistatic agent manufactured by Kao Corporation, product name: electro stripper AC
- This antistatic agent was not kneaded into the base layer 200 but applied to the surface of the base layer 200 opposite to the surface on which the adhesive layer 300 was provided.
- the result of the cross-cut method of the dicing tape according to this comparative example was “Category 5”, and the evaluation of the antistatic agent falling off was “x”.
- the surface resistance value of the surface on which the adhesive layer 300 of the base layer 200 is provided is 1.0E + 14 ⁇ / ⁇
- the surface resistance value of the opposite surface is 1.0E + 10 ⁇ / ⁇
- the volume resistance value is 1.0E + 15 ⁇ m.
- the 1% decay time of the surface on the base layer 200 side was 0.06 seconds, and the surface on the adhesive layer 300 side was not attenuated.
- the first adhesive strength was 165 cN / 25 mm
- the second adhesive strength was 145 cN / 25 mm
- the evaluation of the adhesive strength ratio of the dicing tape 100 was “good”.
- the charged voltage of the semiconductor wafer was ⁇ 78 V
- the evaluation of the charged voltage of the semiconductor wafer was ⁇ .
- the visual appearance of the dicing tape 100 was not uniform, the thickness tolerance in the range of 1 m ⁇ 1 m was 2 ⁇ m, and the film processability was evaluated as ⁇ (see Table 1 below).
- Example 2 A dicing tape was obtained in the same manner as Example 1 except for the following.
- an antistatic agent manufactured by Kao Corporation, product name: electro stripper AC
- This antistatic agent was not kneaded into the base layer 200 but applied to both surfaces of the base layer 200.
- the result of the cross-cut method of the dicing tape according to this comparative example was “Category 5”, and the evaluation of the antistatic agent falling off was “x”.
- the surface resistance value of any surface of the base layer 200 was 1.0E + 10 ⁇ / ⁇ , and the volume resistance value was 1.0E + 15 ⁇ m.
- the 1% decay time on the surface on the base layer 200 side was 0.06 seconds, and the 1% decay time on the surface on the adhesive layer 300 side was 0.06 seconds.
- the first adhesive strength was 155 cN / 25 mm
- the second adhesive strength was 60 cN / 25 mm
- the evaluation of the adhesive strength ratio of the dicing tape 100 was x.
- the charged voltage of the semiconductor wafer was ⁇ 53 V, and the evaluation of the charged voltage of the semiconductor wafer was ⁇ .
- the visual appearance of the dicing tape 100 was not uniform, the thickness tolerance in the range of 1 m ⁇ 1 m was 2 ⁇ m, and the film processability was evaluated as ⁇ (see Table 1 below).
- Example 3 A dicing tape was obtained in the same manner as Example 1 except for the following. As a material constituting the base layer 200, no antistatic agent was used. That is, no antistatic treatment was applied to the dicing tape.
- the surface resistance value of any surface of the base layer 200 according to this comparative example was 1.0E + 14 ⁇ / ⁇ , and the volume resistance value was 1.0E + 16 ⁇ / ⁇ .
- the first adhesive strength was 170 cN / 25 mm
- the second adhesive strength was 165 cN / 25 mm
- the evaluation of the adhesive strength ratio of the dicing tape 100 was “good”.
- the charged voltage of the semiconductor wafer was -245V
- the evaluation of the charged voltage of the semiconductor wafer was x.
- the visual appearance of the dicing tape 100 was uniform, the thickness tolerance in the range of 1 m ⁇ 1 m was 2 ⁇ m, and the film processability was evaluated as ⁇ (see Table 1 below).
- Example 4 A dicing tape was obtained in the same manner as Example 1 except for the following.
- an antistatic agent manufactured by Sanyo Chemical Industries, Ltd., product name: Pelestat 300
- MFR MFR of 30 g / 10 min
- the result of the cross-cut method of the dicing tape according to this comparative example was “Class 0”, and the evaluation of the antistatic agent detachability was ⁇ .
- the surface resistance value of any surface of the base layer 200 was 1.0E + 10 ⁇ / ⁇ , and the volume resistance value was 1.0E + 12 ⁇ m.
- the 1% decay time on the surface on the base layer 200 side was 0.04 seconds, and the 1% decay time on the surface on the adhesive layer 300 side was 0.04 seconds.
- the first adhesive strength was 140 cN / 25 mm
- the second adhesive strength was 55 cN / 25 mm
- the evaluation of the adhesive strength ratio of the dicing tape 100 was x.
- the charged voltage of the semiconductor wafer was ⁇ 23 V, and the charged voltage of the semiconductor wafer was evaluated as “good”.
- the visual appearance of the dicing tape 100 was uniform, the thickness tolerance in the 1 m ⁇ 1 m range was 3 ⁇ m, and the film processability was evaluated as “good” (see Table 1 below).
- Example 5 A dicing tape was obtained in the same manner as Example 1 except for the following.
- an antistatic agent manufactured by Sanyo Chemical Industries, Ltd., product name: Pelestat VH2
- Pelestat VH2 a material constituting the base layer 200
- an antistatic agent manufactured by Sanyo Chemical Industries, Ltd., product name: Pelestat VH2
- the result of the cross-cut method of the dicing tape according to this comparative example was “Class 0”, and the evaluation of the antistatic agent detachability was ⁇ .
- the surface resistance value of any surface of the base layer 200 was 1.0E + 10 ⁇ / ⁇ , and the volume resistance value was 1.0E + 12 ⁇ m.
- the 1% decay time on the surface on the base layer 200 side was 0.04 seconds, and the 1% decay time on the surface on the adhesive layer 300 side was 0.04 seconds.
- the first adhesive strength was 165 cN / 25 mm
- the second adhesive strength was 130 cN / 25 mm
- the adhesive strength ratio of the dicing tape was ⁇ .
- the charged voltage of the semiconductor wafer was -18V, and the evaluation of the charged voltage of the semiconductor wafer was ⁇ .
- the visual appearance of the dicing tape 100 was not uniform, the thickness tolerance in the 1 m ⁇ 1 m range was 7 ⁇ m, and the film processability was evaluated as ⁇ (see Table 1 below).
- both the 1% decay time of the surface on the base layer 200 side and the 1% decay time of the surface on the adhesive layer 300 side are within 0.04 seconds, and the antistatic agent
- the evaluation of the drop-off property, the evaluation of the adhesive strength ratio, the evaluation of the charged voltage of the semiconductor wafer, and the evaluation of the film workability were all good.
- both the 1% decay time on the surface on the base layer 200 side and the 1% decay time on the surface on the adhesive layer 300 side exceeded 0.04 seconds.
- At least one of the evaluation of the antistatic agent drop-off property, the evaluation of the adhesive strength ratio, the evaluation of the voltage of the semiconductor wafer, and the evaluation of the film workability is ⁇ or ⁇ . Met.
- the adhesive tape for processing a semiconductor wafer or the like according to the present invention can stably suppress charging.
- Adhesive tape for processing semiconductor wafers (dicing tape) 200 base layer 300 adhesive layer
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Abstract
Description
本願は、2011年3月24日に、日本に出願された特願2011-065515号に基づき優先権を主張し、その内容をここに援用する。
基層200は、主に、高分子型帯電防止剤が練り込まれた材料樹脂から成る。この基層200は、粘着層300を支持する役目を担っている。また、この基層200は、ダイシング工程後に実施されるエキスパンド工程において、引延しに耐え得るだけの強度を有する。エキスパンド工程とは、ダイシングテープ100を引き伸ばし、チップ間隔を拡張する工程である。このエキスパンド工程の目的は、ピックアップの際にチップの認識性を高めること、および隣接するチップ同士の接触によるデバイスの破損を防止することである。
また、このエラストマーとして、一般式(1)で示されるポリスチレンセグメントと一般式(2)で示されるビニルポリイソプレンセグメントとから成るブロック共重合体が好ましい。
粘着層300は、ダイシング工程において半導体ウエハ等を粘着して支持する役目を担っている。この粘着層300は、ダイシング工程後、光が照射されると、半導体ウエハ等の切断片を容易に剥離させることができる状態となる。なお、使用前のダイシングテープ100では、通常、粘着層300が離型フィルムで保護されている。
ベース樹脂としては、アクリル系樹脂、シリコン系樹脂またはウレタン系樹脂等の粘着層成分として用いられる公知のものを用いることができるが、耐熱性およびコストの観点からアクリル系樹脂を用いることが好ましい。
硬化成分は、例えば、光が照射されると硬化する。この硬化によってベース樹脂が硬化成分の架橋構造に取り込まれた結果、粘着層300の粘着力が低下する。このような硬化成分として、例えば、紫外線、電子線などのエネルギー線の照射によって三次元架橋可能な重合性炭素-炭素二重結合を少なくとも2個以上分子内に有する低分子量化合物が用いられる。具体的に、硬化成分として、特に限定されないが、例えば、トリメチロールプロパントリアクリレート、テトラメチロールメタンテトラアクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールテトラアクリレート、ジペンタエリスリトールモノヒドロキシペンタアクリレート、ジペンタエリスリトールヘキサアクリレート、1,4-ブチレングリコールジアクリレート、1,6-ヘキサンジオールジアクリレート、ポリエチレングリコールジアクリレート、市販のオリゴエステルアクリレート等、芳香族系、脂肪族系等のウレタンアクリレート(オリゴマー)等が用いられる。なお、これらの中でもウレタンアクリレートが好ましい。
帯電防止剤として、特に限定されないが、例えば、アニオン性界面活性剤、カチオン性界面活性剤、非イオン性界面活性剤、両イオン性界面活性剤などの界面活性剤が用いられる。また、温度依存性を示さない帯電防止剤として、例えば、カーボンブラック、銀、ニッケル、アンチモンドープスズ酸化物、スズドープインジウム酸化物などの粉体が用いられる。これらの中でも、カーボンブラック、銀、アンチモンドープスズ酸化物、スズドープインジウム酸化物が好ましい。
粘着付与剤として、特に限定されないが、例えば、ロジン樹脂、テルペン樹脂、クマロン樹脂、フェノール樹脂、スチレン樹脂、脂肪族系石油樹脂、芳香族系石油樹脂、脂肪族芳香族共重合系石油樹脂などが用いられる。これらの中でも、フェノール樹脂、脂肪族系石油樹脂、芳香族系石油樹脂、脂肪族芳香族共重合系石油樹脂が好ましい。
ダイシングテープ100では、印加電圧±5000Vにおける1%減衰時間が0.15秒以内であり、好ましくは0.10秒以内であり、より好ましくは0.05秒以内である。1%減衰時間とは、ダイシングテープ100の電圧が5000Vから50Vまで減衰するのにかかる時間、または-5000Vから-50Vまで減衰するのにかかる時間をいう。
ダイシングテープ100の使用方法は、公知の方法を用いることができる。例えば、ダイシングテープ100を半導体ウエハに貼り付けて固定した後、回転丸刃で半導体デバイスを素子小片ごとに切断する。切断後、ダイシングテープ100の基層200側から紫外線または電子線などを照射する。紫外線または電子線などを照射後、専用治具を用いてダイシングテープ100を放射状に拡張してチップ間を一定間隔に広げた後、半導体デバイスをニードル等で突き上げる。突き上げられた半導体デバイスは、真空コレットまたはエアピンセットによる吸着などでピックアップされた後、マウンティングされるか、またはトレイに収納される。
本発明の半導体ウェハ等加工用粘着テープは、ダイシングテープ以外に、バックグラインドテープ、プリント基板保護テープなどのエレクトロニクス用途、窓ガラス保護用フィルム、装飾用マーキングフィルム、医療、衛生用薬剤の基材などが挙げられる。
この高分子型帯電防止剤は、樹脂に練り込まれ、基層200中に分散している。そのため、基層200が機械などと接触して擦れても、基層200から高分子型帯電防止剤が脱落しにくい。よって、ダイシングテープ100は、安定して帯電を抑制することができる。さらに、この高分子型帯電防止剤は、高分子型ではない従来の帯電防止剤に比べて、帯電防止効果を発現する分子鎖が長い。そのため、ダイシングテープ100は、良好な帯電防止性能を有する。
<ダイシングテープの作製>
基層200を構成する材料として、ポリプロピレン60重量部、一般式(1)で示されるポリスチレンセグメントと一般式(2)で示されるビニルポリイソプレンセグメントとから成るブロック共重合体40重量部、MFRが12g/10minである高分子型帯電防止剤のポリエーテル/ポリオレフィンブロックポリマー(三洋化成工業株式会社製、品名:ペレスタット230)15重量部を準備した。なお、MFRの測定は、JIS K7210に準拠して190℃、21.18Nの測定条件で行った。
得られたダイシングテープ100について、JIS K 5600-5-6に準拠して、クロスカット法による帯電防止剤の脱落性の評価を行った。クロスカット法では、ダイシングテープ100に1mm間隔の碁盤目状の切り込みを入れた後、ダイシングテープ100に既定のテープを貼付けてから剥離し、その試験結果を分類した。規格に基づき、どの格子の目も剥がれない場合は「分類0」とし、剥がれた場合は「分類1~5」とした。そして、クロスカット法の結果が「分類0」であれば○、それ以外であれば×とした。
粘着層300が設けられる前の基層200について、静電気減衰時間測定器(electro-tech system社製、品名:STATIC DECAY METER MODEL406C)を用いて、表面抵抗値および体積抵抗値の測定を行った。表面抵抗値については、基層200の粘着層300が設けられる面の表面抵抗値、およびその面と反対側の面の表面抵抗値をそれぞれ測定した。
得られたダイシングテープ100について、MIL-B-81705Cに準拠して、1%減衰時間の測定を行った。具体的には、静電気減衰時間測定器(electro-tech system社製、品名:STATIC DECAY METER MODEL406C)を用いて、ダイシングテープ100に5000Vの電圧を印加し、ダイシングテープ100の電圧が5000Vから50Vまで減衰するのにかかる時間の測定を行った。この測定を、ダイシングテープ100の基層200側の面、粘着層300側の面についてそれぞれ行った。
作製後7日間以上が経過したダイシングテープ100を半導体ウエハに貼着した。半導体ウエハを貼着後、常温で20分間保管したダイシングテープ100の半導体ウエハに対する粘着力(以下、「第1の粘着力」という)を180°剥離試験により測定した。さらに、40℃で1週間保管したダイシングテープ100を半導体ウエハに貼着後、常温で20分間保管した際の半導体ウエハに対する粘着力(以下、「第2の粘着力」という)を180°剥離試験により測定した。
除電した半導体ウエハを除電したダイシングテープ100に貼付けた後、半導体ウエハの表面から10mmの距離で、表面電位計(SUNX社製、品名:S1HS)を用いて帯電圧を測定した。測定した帯電圧の絶対値が、50V未満であれば○、50V以上100V未満であれば△、100V以上であれば×で評価した。
ダイシングテープ100について、目視での外観が均一であり、かつ、1m×1m範囲の厚み公差が5μm未満であれば○、目視での外観が均一であり、1m×1m範囲の厚み公差が5μm以上であれば△、目視での外観が不均一であれば×で評価した。
下記以外については実施例1と同様にして、ダイシングテープ100を得た。基層200を構成する材料として、MFRが12g/10minである高分子型帯電防止剤のポリエーテル/ポリオレフィンブロックポリマー(三洋化成工業株式会社製、品名:ペレスタット212)を準備した。
下記以外については実施例1と同様にして、ダイシングテープを得た。基層200を構成する材料として、帯電防止剤(花王株式会社製、品名:エレクトロストリッパーAC)を準備した。この帯電防止剤を、基層200中に練り込むのではなく、基層200の粘着層300が設けられる面と反対側の面に塗布した。
下記以外については実施例1と同様にして、ダイシングテープを得た。基層200を構成する材料として、帯電防止剤(花王株式会社製、品名:エレクトロストリッパーAC)を準備した。この帯電防止剤を、基層200中に練り込むのではなく、基層200の両面に塗布した。
下記以外については実施例1と同様にして、ダイシングテープを得た。基層200を構成する材料として、帯電防止剤を用いなかった。すなわち、ダイシングテープに帯電防止処理を施さなかった。
下記以外については実施例1と同様にして、ダイシングテープを得た。基層200を構成する材料として、MFRが30g/10minである帯電防止剤(三洋化成工業株式会社製、品名:ペレスタット300)を準備した。
下記以外については実施例1と同様にして、ダイシングテープを得た。基層200を構成する材料として、MFRが7g/10minである帯電防止剤(三洋化成工業株式会社製、品名:ペレスタットVH2)を準備した。
200 基層
300 粘着層
Claims (7)
- 基層と、
前記基層上に形成される粘着層とを備え、
前記粘着層は、該粘着層を硬化させる硬化成分を含有し、
前記基層は、主に、高分子型帯電防止剤が練り込まれた樹脂から成り、
前記高分子型帯電防止剤のメルトマスフローレート(MFR)が、JIS K7210に準拠して190℃、21.18Nの測定条件で測定したとき、10.0g/10min以上15.0g/10min以下である半導体ウエハ等加工用粘着テープ。 - 基層と、
前記基層上に形成される粘着層とを備え、
前記粘着層は、該粘着層を硬化させる硬化成分を含有し、
前記基層は、主に、高分子型帯電防止剤が分散した樹脂から成り、
前記高分子型帯電防止剤のメルトマスフローレート(MFR)が、JIS K7210に準拠して190℃、21.18Nの測定条件で測定したとき、10.0g/10min以上15.0g/10min以下である半導体ウエハ等加工用粘着テープ。 - 印加電圧±5000Vにおける1%減衰時間が0.15秒以内である請求項1または2に記載の半導体ウエハ等加工用粘着テープ。
- 前記高分子型帯電防止剤の融点は、140℃以上である請求項1または2に記載の半導体ウエハ等加工用粘着テープ。
- 前記樹脂が、ポリプロピレンとエラストマーとの混合物である請求項1または2に記載の半導体ウエハ等加工用粘着テープ。
- 前記樹脂が、ポリエチレンとエラストマーとの混合物である請求項1または2に記載の半導体ウエハ等加工用粘着テープ。
- 前記高分子型帯電防止剤に対して重量比率で、カチオンを100ppm以下およびアニオンを100ppm以下含有する請求項1または2に記載の半導体ウエハ等加工用粘着テープ。
Priority Applications (5)
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EP12761389.1A EP2690146A4 (en) | 2011-03-24 | 2012-03-22 | ADHESIVE TAPE FOR THE PROCESSING OF SEMICONDUCTOR WAFERS AND SIMILAR |
KR1020137022707A KR20140020882A (ko) | 2011-03-24 | 2012-03-22 | 반도체 웨이퍼 등 가공용 점착 테이프 |
CN201280014062.7A CN103443227B (zh) | 2011-03-24 | 2012-03-22 | 半导体晶片加工用粘附带 |
SG2013070834A SG193560A1 (en) | 2011-03-24 | 2012-03-22 | Adhesive tape for processing semiconductor wafer and the like |
US14/006,190 US20140011026A1 (en) | 2011-03-24 | 2012-03-22 | Adhesive tape for processing semiconductor wafer and the like |
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US (1) | US20140011026A1 (ja) |
EP (1) | EP2690146A4 (ja) |
JP (1) | JP2012211314A (ja) |
KR (1) | KR20140020882A (ja) |
CN (1) | CN103443227B (ja) |
SG (1) | SG193560A1 (ja) |
TW (1) | TW201250783A (ja) |
WO (1) | WO2012128317A1 (ja) |
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JP2012094834A (ja) * | 2010-09-13 | 2012-05-17 | Sumitomo Bakelite Co Ltd | ダイシングフィルム |
JP2014135468A (ja) * | 2012-12-10 | 2014-07-24 | Nitto Denko Corp | ダイシングテープ一体型接着シート、及び、ダイシングテープ一体型接着シートを用いた半導体装置の製造方法 |
JP6733804B1 (ja) * | 2019-03-12 | 2020-08-05 | 住友ベークライト株式会社 | 粘着テープおよび粘着テープ用基材 |
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SG193560A1 (en) | 2013-11-29 |
CN103443227B (zh) | 2015-01-28 |
TW201250783A (en) | 2012-12-16 |
EP2690146A1 (en) | 2014-01-29 |
US20140011026A1 (en) | 2014-01-09 |
KR20140020882A (ko) | 2014-02-19 |
CN103443227A (zh) | 2013-12-11 |
EP2690146A4 (en) | 2014-08-20 |
JP2012211314A (ja) | 2012-11-01 |
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