CN109253743B - Plasmon acoustic wave resonance dual-waveband infrared sensor - Google Patents

Plasmon acoustic wave resonance dual-waveband infrared sensor Download PDF

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CN109253743B
CN109253743B CN201811340279.2A CN201811340279A CN109253743B CN 109253743 B CN109253743 B CN 109253743B CN 201811340279 A CN201811340279 A CN 201811340279A CN 109253743 B CN109253743 B CN 109253743B
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electrode
infrared sensor
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substrate
metal
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CN109253743A (en
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梁中翥
陶金
孟德佳
吕金光
秦余欣
梁静秋
史晓燕
侯恩柱
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/40Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light specially adapted for use with infrared light
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • H03H3/0075Arrangements or methods specially adapted for testing microelecro-mechanical resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02244Details of microelectro-mechanical resonators
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/027Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H2009/02165Tuning
    • H03H2009/02173Tuning of film bulk acoustic resonators [FBAR]

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  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

A plasmon acoustic wave resonance dual-waveband infrared sensor relates to the technical field of infrared sensing, solves the problems of low absorption rate and increased absorption layer thickness due to dual-waveband absorption in the prior art, comprises a readout integrated circuit substrate, a film bulk acoustic wave resonator, a dielectric layer and a metal array layer which are sequentially connected, wherein the metal array layer comprises a plurality of metal units, and each metal unit is composed of two metal blocks with different sizes. According to the uncooled infrared sensor, the dielectric layer and the metal array layer are integrated on the surface of the film bulk acoustic resonator, so that the uncooled infrared sensor can enhance absorption of infrared spectrum, the absorption rate is improved to more than 80% from 20%, meanwhile, double wave bands are realized through size conversion of metal blocks, the thickness of the absorption layer is not increased, and the sensing performance of the infrared sensor is excellent; the integrated manufacturing mode can realize batch production and has low cost; the sensor has the advantages of the traditional uncooled infrared sensing, and is quick in response and high in sensing sensitivity.

Description

Plasmon acoustic wave resonance dual-waveband infrared sensor
Technical Field
The invention relates to the technical field of infrared sensing, in particular to a plasmon acoustic wave resonance dual-waveband infrared sensor.
Background
Infrared sensors are generally classified into two types, i.e., a refrigeration type and a non-refrigeration type, according to the temperature at which they operate. The refrigeration-type infrared sensor is generally made of a semiconductor material. By using the photoelectric effect of some materials, the photosensitive material absorbs photons to cause the change of electrical parameters. In order to suppress hot carriers and noise, the operating temperature of the refrigeration-type infrared sensor is usually below 77K. The need for refrigeration, such as with a refrigerator or liquid nitrogen, results in a relatively large volume and weight, as well as a relatively high price. The non-refrigeration type infrared sensor is also called as a room temperature sensor, can work under the room temperature condition without refrigeration, and has the advantages of being easier to carry and the like. Uncooled infrared sensors are typically thermal sensors, i.e., operate by sensing the thermal effect of infrared radiation. The uncooled infrared sensor has advantages over the refrigeration type infrared sensor in aspects of volume, weight, service life, cost, power consumption, starting speed, stability and the like because a refrigeration mechanism with large volume and high price is omitted. But has a difference in response time and sensing sensitivity compared with the refrigeration type infrared sensor.
In recent years, with the development of micro-nano sensing technology, the application of the film bulk acoustic resonator is also expanded to the field of uncooled infrared sensors. On one hand, the film bulk acoustic resonator generally has a miniature size and has stronger external interference resistance; on the other hand, the film bulk acoustic resonator usually works in resonance simulation and has a high quality factor, so that the device shows high sensitivity; the two aspects promote that the uncooled infrared sensor based on the film bulk acoustic resonator shows excellent signal-to-noise ratio indexes. In addition, the film bulk acoustic resonator adopts a frequency readout circuit mode, and the mode can effectively inhibit flicker noise (1/f noise).
However, the absorption rate of the sensitive surface of the film bulk acoustic resonator to infrared radiation is low, generally less than 20%, and there is no selectivity to the incident spectrum. Resulting in a low absorption rate of infrared radiation by uncooled infrared sensors based on film bulk acoustic resonators.
Currently, uncooled infrared sensors typically sense infrared radiation only in a certain wavelength range. If the medium wave and long wave bicolor absorption is to be realized, a bi-material absorption layer structure needs to be designed, and bicolor sensing is realized by absorbing different spectral bands by different materials. However, the method is limited by material preparation stress, the material selection range is limited, and the performance of the uncooled infrared sensor is influenced by increasing the thickness of the absorbing layer.
Disclosure of Invention
In order to solve the above problems, the present invention provides a plasmon acoustic wave resonance two-band infrared sensor.
The technical scheme adopted by the invention for solving the technical problem is as follows:
the plasmon acoustic wave resonance dual-waveband infrared sensor comprises a film bulk acoustic wave resonator, a readout integrated circuit substrate connected with the film bulk acoustic wave resonator, a dielectric layer positioned on the upper surface of the film bulk acoustic wave resonator and a metal array layer positioned on the upper surface of the dielectric layer, wherein the metal array layer comprises a plurality of metal units, and each metal unit is composed of two metal blocks with different sizes.
The invention has the beneficial effects that:
1. by integrating the structure of the dielectric layer and the metal array layer on the surface of the film bulk acoustic resonator, the metal array layer is utilized to realize the enhanced absorption of the infrared spectrum, and the absorbed energy acts on the film bulk acoustic resonator, so that the problem of low absorption rate of the sensitive surface of the film bulk acoustic resonator to infrared radiation is solved, and the absorption rate of the uncooled infrared sensor is improved to more than 80%.
2. The dual-band absorption is realized through the plurality of metal array layers consisting of the two metal blocks with different sizes, the defects of a dual-material absorption layer structure are overcome, the metal array layers do not need the dual-material absorption layer structure and the thickness of an absorption layer is increased, the process is simple to manufacture, and the corresponding infrared sensor has excellent, stable and reliable infrared sensing performance.
3. The uncooled infrared sensor is of a thin film structure, and has obvious advantages in the aspects of anti-seismic performance, pixel consistency and the like compared with the uncooled infrared sensor of a traditional micro-bridge structure.
4. The film bulk acoustic resonator, the dielectric layer and the metal array layer are integrated on the readout integrated circuit substrate, so that the film bulk acoustic resonator has the advantages of integrated manufacturing, batch production, low cost and the like.
5. The plasmon acoustic wave resonance dual-waveband infrared sensor has the advantages of low cost, miniaturization, high stability and long service life of the traditional uncooled infrared sensor, and also has the advantages of quick response and high sensing sensitivity of the refrigeration type infrared sensor.
Drawings
Fig. 1 is a schematic structural diagram of an uncooled infrared sensor of the present invention.
Fig. 2 is a schematic structural diagram of a readout integrated circuit substrate of the uncooled infrared sensor of the present invention.
Fig. 3 is a specific structure diagram of the metal array layer of the uncooled infrared sensor of the present invention.
Fig. 4 is another detailed structural view of the metal array layer of the uncooled infrared sensor of the present invention.
Fig. 5 is a schematic structural diagram of a film bulk acoustic resonator of the uncooled infrared sensor of the present invention.
Fig. 6 is a state diagram corresponding to the manufacturing process S1 of the uncooled infrared sensor of the present invention.
Fig. 7 is a state diagram corresponding to the manufacturing process S2 of the uncooled infrared sensor of the present invention.
Fig. 8 is a state diagram corresponding to S3 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 9 is a state diagram corresponding to S4 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 10 is a state diagram corresponding to the manufacturing process S5 of the uncooled infrared sensor of the present invention.
Fig. 11 is a state diagram corresponding to S6 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 12 is a state diagram corresponding to S7 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 13 is a state diagram corresponding to S8 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 14 is a state diagram corresponding to S9 of a manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 15 is a state diagram corresponding to S10 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 16 is a state diagram corresponding to S11 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 17 is a state diagram corresponding to S12 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 18 is a state diagram corresponding to S13 of the manufacturing process of the uncooled infrared sensor of the present invention.
In the figure: 1. the readout integrated circuit comprises a readout integrated circuit substrate, 1-1, a first substrate electrode, 1-2, a second substrate electrode, 1-3, a substrate, 2, a thin film bulk acoustic resonator, 2-1, a top electrode, 2-.2, a piezoelectric layer, 2-3, a bottom electrode, 2-4, a first electrode, 2-5, a second electrode, 2-6, a silicon substrate, 2-7, a right through hole electrode, 2-8, a left through hole electrode, 2-9, a cavity, 2-17, a right through hole, 2-18, a left through hole, 2-19, a groove, 2-29, a sacrificial layer, 3, a dielectric layer, 4, a metal array layer, 4-1, a metal unit, 5 and a connecting layer.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
As shown in fig. 1, the infrared sensor further includes a readout integrated circuit substrate 1 (also called ROIC substrate), a thin film bulk acoustic resonator 2, a dielectric layer 3, and a metal array layer 4, the readout integrated circuit substrate 1, the thin film bulk acoustic resonator 2, the dielectric layer 3, and the metal array layer 4 are sequentially connected, the thin film bulk acoustic resonator 2 is located on the readout integrated circuit substrate 1, the dielectric layer 3 is located on the upper surface of the thin film bulk acoustic resonator 2, and the metal array layer 4 is located on the upper surface of the dielectric layer 3. The metal array layer 4 includes a plurality of metal units 4-1, and each metal unit 4-1 is composed of two metal blocks with different sizes.
The invention discloses a plasmon acoustic wave resonance dual-waveband infrared sensor, and provides a non-refrigeration infrared sensor structure based on the technologies of a dielectric layer 3, a metal array layer 4 and a film bulk acoustic resonator 2. The sensing mechanism is that the metal array layer 4 and the dielectric layer 3 are used for realizing the enhanced absorption of the infrared spectrum, the absorbed energy acts on the film bulk acoustic resonator 2, and the infrared radiation amount is deduced by detecting the change of the electrical parameters of the film bulk acoustic resonator 2. According to the invention, through integrating the structure of the dielectric layer 3 and the metal array layer 4 on the surface of the film bulk acoustic resonator 2, the problem of low infrared radiation absorption rate of the sensitive surface of the film bulk acoustic resonator 2 is solved, the absorption rate of the uncooled infrared sensor is improved to more than 80%, and the selectivity of the uncooled infrared sensor to an incident spectrum is also increased. Meanwhile, the metal array layer 4 comprises a plurality of repeated metal units 4-1, each metal unit 4-1 is composed of two metal block structures with different sizes, the two metal blocks with different sizes correspond to two different absorption wave crests, and the two absorption wave crests achieve the effect of dual-band absorption, so that the defects of a dual-material absorption layer structure are overcome by integrating the metal array layer 4 on the surface of the film bulk acoustic resonator 2, the method is different from a mode of increasing the absorption bandwidth by adopting a dual-layer structure for absorption, the preparation of the metal array layer 4 can be realized by adopting one material for metal block size conversion, the dual-material absorption layer structure is not needed, namely, the thickness of an absorption layer or the number of stacked layers is not needed to be increased, the process is simple to manufacture, and meanwhile, the infrared sensor has excellent, stable and reliable infrared sensing performance. In addition, the uncooled infrared sensor provided by the invention is of a thin film structure, and has obvious advantages in the aspects of anti-seismic performance, pixel consistency and the like compared with the uncooled infrared sensor of a traditional micro-bridge structure. The film bulk acoustic resonator 2, the dielectric layer 3 and the metal array layer 4 are integrated on the readout integrated circuit substrate 1, so that the readout integrated circuit substrate has the advantages of integrated manufacturing, batch production, low cost and the like. The uncooled infrared sensor has the advantages of low cost, miniaturization, high stability and long service life of the traditional uncooled infrared sensor, and also has the advantages of quick response and high sensing sensitivity of the refrigeration type infrared sensor.
The readout integrated circuit substrate 1 and the thin film bulk acoustic resonator 2 may be directly connected or may be connected through a connection layer 5, and the connection layer 5 is a connection electrode. The readout integrated circuit substrate 1 comprises a substrate 1-3 and two substrate electrodes, referred to as a first substrate electrode 1-1 and a second substrate electrode 1-2, respectively, disposed on the substrate 1-3, the first substrate electrode 1-1 and the second substrate electrode 1-2 both being connected to the substrate 1-3, as shown in fig. 2. The function of the readout integrated circuit substrate 1 is to read an electrical signal of the thin film bulk acoustic resonator 2. The readout integrated circuit substrate 1 generally operates in a radio frequency band, and more specifically, the readout integrated circuit substrate 1 operates in a band (about 1GHz to 3GHz) near the resonance frequency of the thin film bulk acoustic resonator 2.
The material of the metal array layer 4 is usually Au, Ag, Al, etc., but is not limited to these three metals; the metal array layer 4 can be fabricated by conventional semiconductor process and electron beam lithography. The material of the dielectric layer 3 is Ge or MgF2、SiO2Or AlN, etc., but is not limited to these materials. Fig. 3 and 4 are examples of two structures of the metal array layer 4 on the dielectric layer 3, but not limited to fig. 3 and 4, and as shown in fig. 3 and 4, the dual-band enhanced absorption of infrared radiation is achieved by designing an array structure in which each metal unit 4-1 includes two metal blocks of different sizes, the area outlined by the dotted line in fig. 3 is the metal unit 4-1, the two metal blocks of different sizes in the metal unit 4-1 are both square (square in cross section), and the two metal blocks of different sizes in fig. 4 are both circular (circular in cross section).
The film bulk acoustic resonator 2 comprises a silicon substrate 2-6, a cavity 2-9, a bottom electrode 2-3, a piezoelectric layer 2-2, a top electrode 2-1, a left through hole electrode 2-8, a right through hole electrode 2-7, a first electrode 2-4 and a second electrode 2-5, and the specific structure is shown in FIG. 5. The silicon substrate 2-6 is provided with a left through hole 2-18 and a right through hole 2-17, the left through hole electrode 2-8 is positioned in the left through hole 2-18, the left through hole electrode 2-8 fills the left through hole 2-18, the right through hole electrode 2-7 is positioned in the right through hole 2-17, and the right through hole electrode 2-7 fills the right through hole 2-17. The first electrode 2-4 and the second electrode 2-5 are arranged on the lower surface of the silicon substrate 2-6, the first electrode 2-4 is connected with the lower end of the left through hole electrode 2-8 and can be integrally formed with the left through hole electrode 2-8, and the second electrode 2-5 is connected with the lower end of the right through hole electrode 2-7 and can be integrally formed with the right through hole electrode 2-7. The first electrode 2-4 is connected with a first substrate electrode 1-1 of the readout integrated circuit substrate 1, the second electrode 2-5 is connected with a second substrate electrode 1-2 of the readout integrated circuit substrate 1, the left through hole electrode 2-8 is communicated with the readout integrated circuit substrate 1 through the first electrode 2-4, and the right through hole electrode 2-7 is communicated with the readout integrated circuit substrate 1 through the second electrode 2-5. The cavity 2-9 is located on the upper surface of the silicon substrate 2-6, the bottom electrode 2-3 is arranged on the cavity 2-9 and the silicon substrate 2-6, the cavity 2-9 is located between the bottom electrode 2-3 and the silicon substrate 2-6, the bottom electrode 2-3 covers the cavity 2-9, namely the projection area of the cavity 2-9 on the silicon substrate 2-6 is smaller than the projection area of the bottom electrode 2-3 on the silicon substrate 2-6, namely the space between the bottom electrode 2-3 and the silicon substrate 2-6 is called the cavity 2-9, the cavity 2-9 is used for achieving reflection of sound waves, and mechanical energy is limited in the film bulk acoustic wave resonator 2. The piezoelectric layer 2-2 is arranged on the upper surface of the bottom electrode 2-3, the top electrode 2-1 is arranged on the upper surface of the piezoelectric layer 2-2, the dielectric layer 3 is arranged on the upper surface of the top electrode 2-1, the bottom electrode 2-3 is connected with the upper end of the left through hole electrode 2-8, and the top electrode 2-1 is connected with the upper end of the right through hole electrode 2-7. Preferably, the projected area of the piezoelectric layer 2-2 on the silicon substrate 2-6 is larger than the projected area of the cavity 2-9 on the silicon substrate 2-6. The top electrode 2-1, the dielectric layer 3 and the metal array layer 4 jointly form a double-waveband absorption layer, and the performance of the uncooled infrared sensor is improved through broadband absorption of the double-waveband absorption layer.
The bottom electrode 2-3 and the top electrode 2-1 are usually made of Mo, W, Al, Pt or Ni. The piezoelectric layer 2-2 is usually AlN, ZnO or LiNbO3Or quartz, etc. The right through-hole electrode 2-7, the left through-hole electrode 2-8, the first electrode 2-4 and the second electrode 2-5 are usually made by electroplating process, and the material can be selected from Au, Cu or Ni, but not limited to these materials.
The infrared sensor of the invention also comprises a coaming and an infrared window. The enclosure plate is provided on the readout integrated circuit substrate 1, and is adhered to the upper surface of the readout integrated circuit substrate 1 by, for example, a sealing adhesive. The infrared window is arranged on the enclosing plate and is positioned right above the metal array layer 4, and infrared light is allowed to penetrate through the infrared window to irradiate the surface of the metal array layer 4. The readout integrated circuit substrate 1, the surrounding plate and the infrared window form a sealed cavity together, and the sealed cavity provides a vacuum environment for the film bulk acoustic resonator 2, the dielectric layer 3 and the metal array layer 4 according to the requirements of working conditions.
According to the plasmon acoustic wave resonance dual-waveband infrared sensor, the invention provides a preparation method of the plasmon acoustic wave resonance dual-waveband infrared sensor. The method comprises the following specific steps:
s1, obtaining a silicon substrate 2-6
As shown in fig. 6, silicon substrates 2-6 are obtained; silicon substrates 2-6 are high-resistance double-polished silicon wafers commonly used in the semiconductor industry.
S2, preparing left through holes 2-18, right through holes 2-17 and grooves 2-19 on silicon substrates 2-6
As shown in fig. 7, left via hole 2-18, right via hole 2-17 and groove 2-19 are prepared on silicon substrate 2-6 (in S11, groove 2-19 cooperates with bottom electrode 2-3 to become cavity 2-9). The process for making the left vias 2-18 and the right vias 2-17 typically uses deep silicon ion reactive etching (DRIE). The preparation process of the grooves 2-19 can adopt dry etching or wet etching.
S3, manufacturing a conductive electrode
As shown in fig. 8, a left through-hole electrode 2-8 is formed in the left through-hole 2-18, a right through-hole electrode 2-7 is formed in the right through-hole 2-17, a first electrode 2-4 is formed at the lower end of the left through-hole electrode 2-8 and on the lower surface of the silicon substrate 2-6, and a second electrode 2-5 is formed at the lower end of the right through-hole electrode 2-7 and on the lower surface of the silicon substrate 2-6. The left through-hole electrode 2-8, the right through-hole electrode 2-7, the first electrode 2-4 and the second electrode 2-5 are usually prepared by electroplating, and the electroplating material can be Cu, Au or Ni.
S4, filling the grooves 2-19 with a sacrificial material
As shown in fig. 9, a first sacrificial layer is deposited on the upper surface of the silicon substrate 2-6, and the first sacrificial layer covers the grooves 2-19 and the upper surface of the silicon substrate 2-6. The thickness of the first sacrificial layer is larger than the depth of the recesses 2-19. The material of the first sacrificial layer is usually borosilicate glass. The first sacrificial layer and the second sacrificial layer described below are collectively referred to as sacrificial layers 2-29.
S5, grinding the upper surfaces of the silicon substrates 2-6 to be flat
As shown in fig. 10, the upper surfaces of the silicon substrates 2 to 6 are subjected to a planarization process. Planarization is usually performed by chemical mechanical polishing. After the silicon substrates 2-6 are flattened, the left through hole electrodes 2-8 and the right through hole electrodes 2-7 are exposed on the upper surfaces of the silicon substrates 2-6, the first sacrificial layers are called second sacrificial layers after being flattened, the second sacrificial layers only exist in the grooves 2-19, and the upper surfaces of the second sacrificial layers are coplanar with the upper surfaces of the silicon substrates 2-6.
S6, preparing a bottom electrode 2-3
As shown in fig. 11, a bottom electrode 2-3 is prepared on the upper surface of the silicon substrate 2-6 and the upper surface of the second sacrificial layer after completion of S5. One end of the bottom electrode 2-3 is connected with the upper end of the left through hole electrode 2-8, and the bottom electrode 2-3 covers the second sacrificial layer. The bottom electrode 2-3 is typically prepared by a magnetron sputtering process.
S7, preparing a piezoelectric layer 2-2
As shown in fig. 12, a piezoelectric layer 2-2 is prepared on the upper surface of the bottom electrode 2-3. Preferably, the projected area of the piezoelectric layer 2-2 on the silicon substrate 2-6 is larger than the projected area of the groove 2-19 (i.e., the cavity 2-9 of S11) on the silicon substrate 2-6. The piezoelectric layer 2-2 is typically prepared by vapor phase chemical deposition.
S8, preparing a top electrode 2-1
As shown in fig. 13, a top electrode 2-1 is prepared on the upper surface of the piezoelectric layer 2-2. One end of the top electrode 2-1 is connected with the right through hole electrode 2-7. The top electrode 2-1 is typically prepared by a magnetron sputtering process.
S9, preparing a dielectric layer 3
As shown in fig. 14, a dielectric layer 3 is prepared on the upper surface of the top electrode 2-1. The dielectric layer 3 is generally prepared by a sputtering or vacuum evaporation process. The area of the dielectric layer 3 is generally smaller than or equal to the area of the top electrode 2-1, and the area of the lower surface of the dielectric layer 3 is smaller than or equal to the area of the upper surface of the top electrode 2-1.
S10, preparing a metal array layer 4
As shown in fig. 15, a metal array layer 4 is prepared on the upper surface of the dielectric layer 3. The metal array layer 4 can be formed by photolithography, electron beam lithography, lift-off, or other processes.
S11, etching the sacrificial layer 2-29 to obtain the cavity 2-9
As shown in fig. 16, the second sacrificial layer is released to obtain the cavity 2-9, that is, the film bulk acoustic resonator 2 is obtained, and at this time, the dielectric layer 3 and the film bulk acoustic resonator 2 are in a connected state. The cavities 2-9 can be obtained by wet etching the second sacrificial layer with an HF solution or dry etching the second sacrificial layer with gaseous HF.
S12, preparing a readout integrated circuit substrate 1
As shown in fig. 17, a readout integrated circuit substrate 1 is prepared.
S13, bonding the readout integrated circuit substrate 1 and the film bulk acoustic resonator 2
As shown in fig. 18, the thin film bulk acoustic resonator 2 is connected to the readout integrated circuit substrate 1 by bonding, and the uncooled infrared sensor is obtained. I.e. the first substrate electrode 1-1 and the first electrode 2-4 are connected and the second substrate electrode 1-2 and the second electrode 2-5 are connected. The two substrate electrodes may be connected to the first electrodes 2-4 and the second electrodes 2-5 on the thin film bulk acoustic resonator 2 through a connection layer 5. The bonding method generally adopts a metal thermocompression bonding process.
S14, packaging
The resulting device of S14 is packaged. The enclosing plate is glued on the read integrated circuit substrate 1, the infrared window is glued to the upper part of the enclosing plate, and the read integrated circuit substrate 1, the enclosing plate and the infrared window form a sealed cavity. The coaming can adopt a silicon wafer, a glass sheet or a ceramic packaging structure and the like. The sealed cavity can be vacuumized according to the requirements of the film bulk acoustic resonator 2, the dielectric layer 3 and the metal array layer 4. The preparation is finished.
The manufacturing method integrates the film bulk acoustic resonator 2, the dielectric layer 3 and the metal array layer 4 on the readout integrated circuit substrate 1 by an MEMS micro-processing method, so that the manufacturing method has the advantages of integrated manufacturing, batch production, low cost and the like.

Claims (5)

1. The plasmon acoustic wave resonance dual-waveband infrared sensor comprises a film bulk acoustic wave resonator (2), and is characterized by further comprising a readout integrated circuit substrate (1) connected with the film bulk acoustic wave resonator (2), a dielectric layer (3) positioned on the upper surface of the film bulk acoustic wave resonator (2), and a metal array layer (4) positioned on the upper surface of the dielectric layer (3), wherein the metal array layer (4) comprises a plurality of metal units (4-1), and each metal unit (4-1) is composed of two metal blocks with different sizes;
the readout integrated circuit substrate (1) comprises two substrates (1-3) and two substrate electrodes, wherein the two substrate electrodes are positioned on the upper surface of the substrate (1-3), and the substrate electrodes are connected with the substrate (1-3) and the film bulk acoustic resonator (2);
the film bulk acoustic resonator (2) comprises a silicon substrate (2-6), a cavity (2-9), a bottom electrode (2-3), a piezoelectric layer (2-2), a top electrode (2-1), a left through hole electrode (2-8), a right through hole electrode (2-7), a first electrode (2-4) and a second electrode (2-5), wherein the first electrode (2-4) and the second electrode (2-5) are located on the lower surface of the silicon substrate (2-6) and are connected with the two substrate electrodes in a one-to-one correspondence manner, the left through hole electrode (2-8) and the right through hole electrode (2-7) are located in the silicon substrate (2-6) and are connected with the first electrode (2-4) and the second electrode (2-5) in a one-to-one correspondence manner, the bottom electrode (2-3) is connected with the left through hole electrode (2-8) and is located on the silicon substrate (2-6), the cavity (2-9) is located between the silicon substrate (2-6) and the bottom electrode (2-3), the projection area of the cavity (2-9) on the silicon substrate (2-6) is smaller than the projection area of the bottom electrode (2-3) on the silicon substrate (2-6), the piezoelectric layer (2-2) is arranged on the upper surface of the bottom electrode (2-3), the top electrode (2-1) is arranged on the upper surface of the piezoelectric layer (2-2) and connected with the right through hole electrode (2-7), and the dielectric layer (3) is arranged on the upper surface of the top electrode (2-1).
2. The plasmonic acoustic wave resonant two-band infrared sensor of claim 1, wherein the projected area of the piezoelectric layer (2-2) on the silicon substrate (2-6) is larger than the projected area of the cavity (2-9) on the silicon substrate (2-6).
3. The plasmonic acoustic wave resonant dual band infrared sensor of claim 1, wherein the material of the metal array layer (4) is Au, Ag or Al; the dielectric layer (3) is made of Ge and MgF2、SiO2Or AlN; the bottom electrode (2-3) and the top electrode (2-1) are made of Mo, W, Al and Pt or Ni; the piezoelectric layer (2-2) is made of AlN, ZnO or LiNbO3Or quartz; the left through hole electrodes (2-8), the right through hole electrodes (2-7), the first electrodes (2-4) and the second electrodes (2-5) are made of Au, Cu or Ni.
4. The plasmonic acoustic resonance dual band infrared sensor of claim 1, further comprising a shroud disposed on the readout integrated circuit substrate (1) and an infrared window disposed on the shroud, the infrared window being directly above the metal array layer (4), the readout integrated circuit substrate (1), the shroud and the infrared window together forming a sealed cavity.
5. The plasmon acoustic wave resonance dual band infrared sensor of claim 1, wherein the infrared sensor further comprises a connection layer (5), and the readout integrated circuit substrate (1) is connected to the thin film bulk acoustic resonator (2) through the connection layer (5).
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