CN102175329A - Infrared detector, manufacturing method thereof and multiband uncooled infrared focal plane - Google Patents
Infrared detector, manufacturing method thereof and multiband uncooled infrared focal plane Download PDFInfo
- Publication number
- CN102175329A CN102175329A CN2010105684733A CN201010568473A CN102175329A CN 102175329 A CN102175329 A CN 102175329A CN 2010105684733 A CN2010105684733 A CN 2010105684733A CN 201010568473 A CN201010568473 A CN 201010568473A CN 102175329 A CN102175329 A CN 102175329A
- Authority
- CN
- China
- Prior art keywords
- layer
- make
- infrared
- micro
- bridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 238000002161 passivation Methods 0.000 claims abstract description 21
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 238000001312 dry etching Methods 0.000 claims description 22
- 230000005855 radiation Effects 0.000 claims description 22
- 239000004642 Polyimide Substances 0.000 claims description 17
- 229920001721 polyimide Polymers 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 12
- 239000007769 metal material Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 10
- 230000010287 polarization Effects 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 206010034972 Photosensitivity reaction Diseases 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 9
- 230000036211 photosensitivity Effects 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000007792 gaseous phase Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 6
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- -1 monox Chemical compound 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 3
- 239000012071 phase Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000005546 reactive sputtering Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 claims description 3
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical compound [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 claims description 3
- MFYFNUKUXIRYFV-JSGCOSHPSA-N Polygonone Natural products O=CC=1C(=O)C[C@H]2C(C)(C)CCC[C@@]2(C)C=1 MFYFNUKUXIRYFV-JSGCOSHPSA-N 0.000 claims description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 2
- 230000001788 irregular Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 7
- 230000005284 excitation Effects 0.000 abstract description 2
- 238000003384 imaging method Methods 0.000 description 24
- 238000003331 infrared imaging Methods 0.000 description 11
- 238000005057 refrigeration Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004297 night vision Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000035800 maturation Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 235000019504 cigarettes Nutrition 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0801—Means for wavelength selection or discrimination
- G01J5/0802—Optical filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0808—Convex mirrors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/59—Radiation pyrometry, e.g. infrared or optical thermometry using polarisation; Details thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention relates to an infrared detector which comprises a substrate structure and a micro-bridge structure, wherein the substrate structure comprises a silicon substrate base containing a reading circuit, two reading circuit electrodes and a reflection layer; the micro-bridge structure comprises a micro-bridge deck, two support pillars and two support bridge legs; the reflection layer is arranged on one end face of the silicon substrate base; the two reading circuit electrodes are diagonally distributed; the two reading circuit electrodes together with the reflection layer are arranged on the same end face of the silicon substrate base but are not mutually contacted; one end of each support bridge leg is connected to the bridge deck while the other end of each support bridge leg is connected to the reading circuit through each support pillar and each reading circuit electrode; the bridge deck is hung above the reflection layer; an optical resonant cavity is formed between the bridge deck and the reflection layer; and a support layer, a thermosensitive layer, a passivation layer and an electromagnetic wave excitation layer are distributed upwards from the optical resonant cavity on the bridge deck. Besides, the invention also provides a method for manufacturing the detector and a multiband uncooled infrared focal plane. The multiband uncooled infrared focal plane realized by the invention has the advantages of simple structure, small volume, low difficulty in manufacturing, low cost and high yield.
Description
Technical field
The present invention relates to infrared acquisition and technical field of imaging, relate in particular to a kind of multiband non-refrigerating infrared focal plane of the MEMS of employing fabrication techniques.
Background technology
Infrared imagery technique is as a kind of widely used night vision technology, compare with other night vision technology (artificial light, low-light level imaging), infrared imagery technique is not having direct infrared radiation imaging to object under the illumination condition fully without any need for floor light mode or poor light condition.And infrared imaging all can provide the excellent images performance under environmental baselines such as mist, cloud, cigarette and dust, thoroughly broken away from the technical limitation of artificial light or low light level imaging, therefore is called as the round-the-clock imaging technique of the third generation.
The non refrigerating infrared imaging technology has the advantages that with respect to the refrigeration mode detector cost is low, volume is little, low in energy consumption.Along with improving constantly of non-refrigerated infrared detector technical merit, progressively replaced refrigeration type infrared detector in many application scenarios, become the imaging acp chip that more infrared night vision instrument systems extensively adopt, thereby have boundless civil and national defense applications prospect.
The material that present business-like non-refrigerating infrared focal plane product is adopted mainly contains three kinds of amorphous silicon (Amorphous silicon (α-Si)), vanadium oxide (Vanadium oxide (VOx)) and barium strontium titanates (Barium strontium titanate (BST)).The non-refrigerating infrared focal plane image-forming principle can be sketched and be, when detector absorbs extraneous infrared energy, the temperature of detector can change: adopt amorphous silicon and vanadium oxide material then detector convert temperature variation to electric signal by resistance variations; Employing barium strontium titanate material then detector converts temperature variation to electric signal by capacitance variations; And then according to the size of electric signal, be converted into the temperature of target object, thereby obtain the Temperature Distribution of target object, target object is carried out imaging.
At present, the non refrigerating infrared imaging wave band mainly concentrates on long wave infrared region (8 μ m～14 μ m), and that the imaging wave band is positioned at the product of medium wave infrared band (3 μ m～5 μ m) is fewer.These two wave band imagings all have advantage separately: LONG WAVE INFRARED imaging technique maturation, and highly sensitive, more intense to the penetration capacity of smog, can provide excellent imaging effect to most of target; The background radiation of medium wave infrared imaging is disturbed little, and visual range is better than LONG WAVE INFRARED in the bigger environment of humidity ratio, aspect missile warning important use is arranged.Since LONG WAVE INFRARED imaging and each tool advantage of medium wave infrared imaging, and different spectral informations is provided, so some of U.S. tactics imaging systems at advanced night are equipped with LONG WAVE INFRARED and medium wave infrared imaging system simultaneously.
In recent years, the multiband infrared imagery technique has caused the interest of many companies and research institution.In order to realize the multiband imaging, infrared imaging system generally adopts a plurality of detectors to the different-waveband response, such system design complexity, and volume, weight, power consumption are all bigger, and the cost height.
Abroad aspect infrared multiband imaging, U.S. Ray Thcon has applied for multiband imaging patent (United States Patent (USP) in Dec, 2009, title: Dual Band Imager with Visible or SWIR Detectors Combined with Uncooled LWIR Detectors, the patent No.: US 7,629,582 B2, the open date: 2009.12.8).The technical scheme of this patent is to adopt photon type detector and thermosensitive type detector to mix integrated mode, and the photon type detector is as the short-wave infrared detector, and the thermosensitive type detector is as Long Wave Infrared Probe.The advantage of this patented technology scheme is that the detector of short-wave infrared and LONG WAVE INFRARED adopts different devices respectively, and adopt stacked mode to mix to integrate, the short-wave infrared detector has very high transmitance to LONG WAVE INFRARED, so short-wave infrared detector and Long Wave Infrared Probe are independent of each other, the resolution height.Shortcoming is that technology difficulty is very big, owing to adopt the device of two kinds of different principle, the sensing circuit design is very complicated.
Domestic aspect infrared multiband imaging, No.13 Inst., Chinese Electronic Science ﹠ Technology Group Co has applied for a dual-waveband imaging patent (Chinese patent in Dec, 2009, title: a kind of MEMS non-refrigerated two-band infrared detector and preparation thereof, application number: 200910228000.6, the open date: 2010.05.26).This patent adopts the mode by regulating the optical resonance cavity length to realize dual-waveband imaging.The advantage of this patent is that principle is fairly simple, easily design.Shortcoming is to adopt double-deck micro-bridge structure, and two-layer micro-bridge structure is independent respectively, makes complex structure, technology realize that difficulty is very big; Owing to need the extra control long, also increased the difficulty of sensing circuit design to resonator cavity.
Summary of the invention
Technical matters to be solved by this invention provides and a kind ofly realizes simple, as can to reduce imaging system volume, weight and power consumption, and multiband non-refrigerating infrared focal plane cheaply.
One side as technical solution of the present invention, a kind of infrared eye is provided, comprise underlying structure, micro-bridge structure, described underlying structure comprises the silicon substrate substrate that contains sensing circuit, two sensing circuit electrodes, reflection horizon, described micro-bridge structure comprises microbridge bridge floor, two support columns, two supporting bridge legs, wherein
Described reflection horizon is positioned on the end face of described silicon substrate substrate; Described two sensing circuit electrodes are diagonal line and distribute, and are positioned on the same end face of described silicon substrate substrate with described reflection horizon;
Described two supporting bridge legs respectively have an end to link to each other with described microbridge bridge floor, and the other end links to each other with the suprabasil sensing circuit of described silicon substrate respectively with two sensing circuit electrodes via described two support columns; Make described microbridge bridge floor be suspended on the described reflection horizon, between described microbridge bridge floor and described reflection horizon, form an optical resonator;
Described microbridge bridge floor upwards is distributed with supporting layer, heat-sensitive layer, passivation layer successively from described optical resonator, especially, described microbridge bridge floor also comprises an electromagnetic wave excites layer, and described electromagnetic wave excites layer is positioned on the described passivation layer, closely contacts with described passivation layer.
Further, described electromagnetic wave excites layer is realized by make array type sub-wavelength microstructure on polarization material.
Further, described polarization material be can with the metal material of the infrared radiation signal generation coupling of outside input or dielectric substance in a kind of.
Further, described metal material is a kind of in gold, silver, platinum, nickel, titanium, the tungsten; Described dielectric substance is a kind of in silit, zinc paste, the gallium arsenide.
Further, described array type sub-wavelength microstructure forms by a plurality of microstructure units are regularly arranged.
Further, described microstructure unit is shaped as in rectangle, circle, the polygon one or more.
Further, the cycle of described microstructure unit selects the centre wavelength of wave band identical with desire substantially, and the size of described microstructure unit is about half of cycle.
As technical solution of the present invention on the other hand, also provide a kind of method of making infrared eye, the specific implementation step is as follows,
The first step, make underlying structure: utilize electron beam evaporation or magnetically controlled sputter method in the silicon substrate substrate, to be coated with one or more metals in nickel chromium triangle, aluminium or the titanium nitride, on the same end face of described silicon substrate substrate, to form reflection horizon and two sensing circuit electrodes, realize graphical again by stripping technology, dry etching or wet etching method;
In second step, make sacrifice layer: adopt spin coating method to make described sacrifice layer to Photosensitive polyimide or non-photosensitivity type polyimide; Perhaps, adopt the method for chemical vapor deposition to make described sacrifice layer to silicon dioxide or polysilicon;
In the 3rd step, make the sacrifice layer through hole: on the described sacrifice layer of making by the Photosensitive polyimide, make the sacrifice layer through hole by photoetching method; Perhaps, on the described sacrifice layer of making by non-photosensitivity type polyimide, silicon dioxide or polysilicon, make the sacrifice layer through hole by dry etching method;
In the 4th step, make the supporting layer in the micro-bridge structure: use any material in silicon nitride, monox, silicon oxynitride or the silit, adopt chemical gaseous phase depositing process to make and form described supporting layer;
In the 5th step, make the heat-sensitive layer in the micro-bridge structure: adopt reactive sputtering method to be coated with to vanadium oxide and form described heat-sensitive layer; Perhaps, the amorphous silicon using plasma is strengthened chemical vapour deposition technique be coated with the described heat-sensitive layer of formation, and then realize graphical by dry etching;
In the 6th step, make the passivation layer in the micro-bridge structure: use any material in silicon nitride, monox, silicon oxynitride or the silit, adopt chemical gas-phase deposition method to make and form described passivation layer;
In the 7th step, make sensing circuit electrode contact hole and heat-sensitive layer contact hole: utilize and mix the etching gas that constitutes with fluoroform, adopt dry etching method to form sensing circuit electrode contact hole and heat-sensitive layer contact hole by oxygen;
In the 8th step, make the Metal Contact electrode layer: use any metal in titanium, aluminium, titanium nitride, the vanadium, adopt electron beam evaporation or magnetron sputtering to make described Metal Contact electrode layer, and then realize graphical by dry etching method;
The 9th step, make the electromagnetic wave excites layer in the micro-bridge structure: adopt magnetically controlled sputter method or chemical gaseous phase depositing process to make and form described electromagnetic wave excites layer, and then it is graphical to utilize dry etching method or wet etching method to realize, forms array type sub-wavelength microstructure;
The tenth step etched micro-bridge structure, removed described sacrifice layer, discharged micro-bridge structure: adopt dry etching method to etch micro-bridge structure earlier; Adopt following method to remove described sacrifice layer again: to utilize the oxygen plasma dry method to remove the described sacrifice layer of making by Photosensitive polyimide or non-photosensitivity type polyimide; Perhaps, utilize hydrogen fluoride gas to remove the described sacrifice layer of making by silicon dioxide; Perhaps, utilize xenon fluoride to remove the described sacrifice layer of making by polysilicon.
Further, the thickness of described electromagnetic wave excites layer is 50nm～200nm.
As technical solution of the present invention more on the one hand, the present invention also provides a kind of multiband non-refrigerating infrared focal plane, and rule is arranged or irregularly is placed with a plurality of above-mentioned infrared eyes that can absorb the different-waveband infrared radiation signal on the described focal plane.
The invention has the beneficial effects as follows: technical solution of the present invention is further improved on the basis of existing non-refrigerated infrared detector technical scheme, increase by an electromagnetic wave excites layer, realize the spectrum selection by coupling takes place between electromagnetic wave excites layer and the incident infrared radiation signal, and then realize the multiband infrared imaging of infrared focus plane.The infrared focus plane that is made of technical solution of the present invention has simple in structure, advantages such as volume is little, the manufacture craft degree-of-difficulty factor is low, low-cost, high finished product rate, simultaneously, because the present invention is the improvement of carrying out on the non-refrigeration detector technology of existing maturation, this just need not to redesign sensing circuit again, has shortened the R﹠D cycle greatly, has reduced R﹠D costs and cost of products.
Description of drawings
Fig. 1 is the structural representation of infrared eye of the present invention;
Fig. 2 is the A-A ' cross-sectional view of the infrared eye among Fig. 1;
Fig. 3 is first kind of formation synoptic diagram of the array type sub-wavelength microstructure of electromagnetic wave excites layer among the present invention;
Fig. 4 is second kind of formation synoptic diagram of the array type sub-wavelength microstructure of electromagnetic wave excites layer among the present invention;
Fig. 5 is the third formation synoptic diagram of the array type sub-wavelength microstructure of electromagnetic wave excites layer among the present invention;
Fig. 6 is for electromagnetic wave coupling centre wavelength and polarization material, array arrangement mode and concern synoptic diagram between the cycle;
Fig. 7 a is the schematic cross-section of the underlying structure among the present invention in A-A ' direction;
Fig. 7 b is the schematic cross-section of the sacrifice layer among the present invention in A-A ' direction;
Fig. 7 c is for making behind the sacrifice layer through hole sacrifice layer at the schematic cross-section of A-A ' direction;
Fig. 7 d is the schematic cross-section of the supporting layer among the present invention in A-A ' direction;
Fig. 7 e is the schematic cross-section of the heat-sensitive layer among the present invention in A-A ' direction;
Fig. 7 f is the schematic cross-section of the passivation layer among the present invention in A-A ' direction;
Fig. 7 g making electrode contact hole and heat-sensitive layer contact hole post passivation layer are at the schematic cross-section of A-A ' direction;
Fig. 7 h is the schematic cross-section of the Metal Contact electrode among the present invention in A-A ' direction;
Fig. 7 i is the schematic cross-section of the electromagnetic wave excites layer among the present invention in A-A ' direction;
Fig. 7 j is the schematic cross-section of the micro-bridge structure among the present invention in A-A ' direction;
Fig. 8 constitutes the synoptic diagram of a kind of arrangement mode of focal plane for the detector of the different-waveband among the present invention;
Fig. 9 constitutes the synoptic diagram of the another kind of arrangement mode of focal plane for the detector of the different-waveband among the present invention.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.
One side as technical solution of the present invention, as shown in Figure 1, provide a kind of infrared eye to comprise underlying structure, micro-bridge structure, underlying structure comprises the silicon substrate substrate 1 that contains sensing circuit, reflection horizon 2, two sensing circuit electrodes 6, and micro-bridge structure comprises microbridge bridge floor 5, two support columns 3, two supporting bridge legs 4.
The reflection horizon is positioned on the end face of silicon substrate substrate; Two sensing circuit electrodes are diagonal line and distribute, and are positioned on the same end face of silicon substrate substrate with the reflection horizon, and do not contact mutually with the reflection horizon.Two supporting bridge legs respectively have an end to link to each other with the microbridge bridge floor, and the other end links to each other with the suprabasil sensing circuit of silicon substrate respectively with two sensing circuit electrodes via two support columns; Make the microbridge bridge floor be suspended on the reflection horizon, between microbridge bridge floor and reflection horizon, form an optical resonator.
Wherein, the material in reflection horizon 2 is generally metal material, and this is because metal material can provide very high wide range reflectivity at infrared band, and concrete material supply section can adopt aluminium, nickel-chrome, gold, titanium nitride etc.The optical resonator 13 that forms between reflection horizon 2 and the microbridge bridge floor 5 can strengthen the absorptivity of detector to infrared radiation signal, improves detector sensitivity.
Support column 3 cooperatively interacts with supporting bridge leg 4, is used for supporting microbridge bridge floor 5, realizes being electrically connected between microbridge bridge floor 5 and the sensing circuit, also increases the thermal resistance between microbridge bridge floor 5 and the silicon substrate substrate 1 simultaneously, improves the responsiveness of detector.Wherein, the structure of support column 3 can adopt the bowl structure that is made of jointly propping material and metal material, also can adopt the plug shape structure that only constitutes by metal material.Above-mentioned metal material generally adopts metals such as the big aluminium of conductivity, nickel, titanium, vanadium.Bridge leg 4 generally is made of the sandwich construction that comprises dielectric support layer and metal conducting layer.
Referring to Fig. 3, Fig. 4, Fig. 5, electromagnetic wave excites layer 12 is realized by make array type sub-wavelength microstructure on polarization material.
Further, above-mentioned polarization material be can with the metal material of the infrared radiation signal generation coupling of outside input or dielectric substance in a kind of.Particularly, metal material can be a kind of in gold, silver, platinum, nickel, titanium, the tungsten; Dielectric substance (dielectric material) can be a kind of in silit, zinc paste, the gallium arsenide.
Referring to Fig. 3, Fig. 4, Fig. 5, array type sub-wavelength microstructure is by a plurality of microstructure unit 15/16 regularly arranged formation, and the wave band that array type sub-wavelength microstructure is chosen is by shape, size and the cycle decision of described microstructure unit 15/16.
The shape of microstructure unit can be one or more in rectangle, circle, the polygon, and in addition, absorption bands is also relevant with choosing of the size of microstructure unit, cycle.As shown in Figure 3, if microstructure unit 15 is a rectangle, then the size of microstructure unit 15 is length of side L, and P is the cycle; As Fig. 4, shown in Figure 5, if microstructure unit 16 is circular, then the size of microstructure unit 16 is radius R, and P is the cycle.Generally speaking, the cycle selects the centre wavelength of wave band identical with desire substantially, and promptly the cycle is selected near the choosing value centre wavelength of wave band in desire, and the size of microstructure unit is about half of cycle.Specific as follows: for the medium wave infrared band (is that wavelength is the wave band of 3 μ m～5 μ m, then centre wavelength is 4 μ m) and long wave infrared region (be that wavelength is the wave band of 8 μ m～14 μ m, then centre wavelength is 11 μ m), the scope of choosing in cycle can be from several microns to twenties microns, and size can be from several microns choosing values in tens micrometer ranges.In addition, also on the basis of above-mentioned cycle and size choosing value, calculate and do some fine settings, so that electromagnetic wave excites layer 12 excitation wavelength are corresponding with selected wave band according to the situation of choosing of polarization material.Can choose the cycle as follows particularly: at first, obtain a reference period according to the specific inductive capacity of the polarization material of choosing; Secondly, under the situation that material, shape, cycle, the size of microstructure unit are all determined, carry out emulation, if have deviation between the wavelength that the simulation result demonstration inspires and the wavelength of selected wave band, after then finely tuning reference period, carry out emulation again, till the wavelength that inspires is corresponding with selected wave band.
As technical solution of the present invention on the other hand, also provide a kind of method of making infrared eye, the specific implementation step is as follows,
The first step, make underlying structure: utilize methods such as electron beam evaporation, magnetron sputtering in silicon substrate substrate 1, to be coated with nickel chromium triangle (NiCr), aluminium (Al) or titanium nitride (TiN) and wait one or more metals, to form reflection horizon 2 and two sensing circuit electrodes 6 on the same end face of silicon substrate substrate 1, thickness can be 50nm～300nm; And then realize graphical by stripping technology, dry etching or wet etching method.As the embodiment of this step, adopt electron beam evaporation to be coated with NiCr, forming thickness is reflection horizon 2 and the sensing circuit 6 of 50nm～300nm, and then it is graphical to adopt wet etching method to realize, referring to Fig. 7 a.
In second step, make sacrifice layer 7, referring to Fig. 7 b.This step has following two kinds of implementations according to the selection difference: if select Photosensitive polyimide or non-photosensitivity type polyimide (PI:polyimide) for use, then can adopt spin coating method to make sacrifice layer 7 to PI; If select silicon dioxide (SiO for use
2) or polysilicon (poly-silicon), then adopt the method for chemical vapor deposition to make sacrifice layer 7 to silicon dioxide or polysilicon.The thickness of sacrifice layer 7 is 1mm～3mm, and as an embodiment of this step, sacrifice layer 7 thickness are 2.5mm.
In the 3rd step, make sacrifice layer through hole 71, referring to Fig. 7 c.This step has following two kinds of implementations according to the difference of the material of making sacrifice layer 7: if the sacrifice layer 7 of selecting for use Photosensitive PI to make is then made sacrifice layer 7 through holes by photoetching method on sacrifice layer 7; If the sacrifice layer 7 of selecting for use non-photosensitivity type PI, silicon dioxide or polysilicon to make is then made sacrifice layer 7 through holes by the RIE dry etching method on sacrifice layer 7.Wherein, RIE dry etching gas is generally oxygen (O
2), fluoroform (CHF
3), carbon tetrafluoride (CF
4), sulfur hexafluoride (SF
6) etc.By optimizing etching technics, make the sidewall of sacrifice layer through hole 71 have certain angle of inclination, be beneficial to step and cover, reduce point and connect failure probability, improve the intensity and the yield of micro-bridge structure.
In the 4th step, make the supporting layer 8 in the micro-bridge structure 100: use silicon nitride (SiNx), silicon dioxide (SiO
2), any material in silicon oxynitride (SiON) or the silit (SiC), adopt chemical gaseous phase depositing process to make and form supporting layer 8, supporting layer 8 thickness are 50nm～300nm, referring to Fig. 7 d.In addition, need to prove, is SiO if above-mentioned second step makes that sacrifice layer 7 selects for use
2, then in this step, can not select identical materials for use with sacrifice layer 7, promptly can not select SiO for use
2, can prevent from like this when follow-up release micro-bridge structure, supporting layer 8 to be exerted an influence.
The 5th step, make the heat-sensitive layer 9 in the micro-bridge structure 100, this step has following two kinds of implementations according to the selection difference: if select vanadium oxide (VO for use
x), then can be to VO
xAdopt reactive sputtering method to be coated with and form heat-sensitive layer 9; If (α-Si), then can strengthen chemical vapour deposition technique to α-Si using plasma and be coated with formation heat-sensitive layer 9, the thickness of heat-sensitive layer 9 is 50nm～300nm to select amorphous silicon for use.And then graphical by the realization of RIE dry etching, referring to Fig. 7 e.
In the 6th step, make the passivation layer 10 in the micro-bridge structure 100: use silicon nitride (SiN
x), silicon dioxide (SiO
2), any material in silicon oxynitride (SiON) or the silit (SiC), adopt chemical gas-phase deposition method to make and form passivation layer 10, passivation layer 10 thickness are 50nm～300nm, referring to Fig. 7 f.In addition, need to prove, is SiO if above-mentioned second step makes that sacrifice layer 7 selects for use
2, then in this step, can not select identical materials for use with sacrifice layer 7, promptly can not select SiO for use
2, can prevent from equally when follow-up release micro-bridge structure, passivation layer 10 to be exerted an influence.
In the 7th step, make sensing circuit electrode contact hole 19 and heat-sensitive layer contact hole 20: utilize by oxygen (O
2) and fluoroform (CHF
3) mix the etching gas that constitutes, adopt the RIE dry etching to go out sensing circuit electrode contact hole 19 and heat-sensitive layer contact hole 20, referring to Fig. 7 g.
In the 8th step, make Metal Contact electrode layer 11: use any metal material in titanium (Ti), aluminium (Al), titanium nitride (TiN), the vanadium (V), adopt electron beam evaporation or magnetron sputtering to make Metal Contact electrode layer 11, thickness 50nm～200nm; And then graphical by the realization of RIE dry etching, etching gas generally can be argon gas (Ar), fluoroform (CHF
3), boron chloride (BCl
3), chlorine (Cl
2) etc., referring to Fig. 7 h.
The 9th step, make the electromagnetic wave excites layer 12 in the micro-bridge structure 100: adopt magnetically controlled sputter method to make or chemical gaseous phase depositing process formation electromagnetic wave excites layer 12 to polarization material, and then it is graphical to utilize dry etching method or wet etching method to realize, forms array type sub-wavelength microstructure; An embodiment as this step adopts magnetically controlled sputter method to make to gold (Au), and forming thickness is the electromagnetic wave excites layer 12 of 50nm～200nm; And then utilize potassium iodide (KI) and iodine (I
2) the solution wet etching method realize graphical.The size of the microstructure of making on the different detectors designed according to different response wave band with the cycle, thereby realized the multiband imaging, referring to Fig. 7 i.
In the tenth step, etching micro-bridge structure 100 is removed sacrifice layer 7, discharges micro-bridge structure 100: at first adopt photoetching method to realize the graphical of micro-bridge structure; Utilize CHF then
3With O
2Mix dry etching passivation layer 10 and supporting layer 8, till exposing sacrifice layer 7, so far etch micro-bridge structure 100; Last again according to the selection of making sacrifice layer 7, adopt following three kinds of modes to remove sacrifice layer 7:, then to adopt the oxygen plasma dry method to remove sacrifice layer 7 if select for use Photosensitive polyimide or non-photosensitivity type polyimide to make sacrifice layer 7; If adopt SiO
2The sacrifice layer of making 7 then utilizes hydrogen fluoride (HF) gas to remove sacrifice layer 7; If the sacrifice layer 7 that adopts polysilicon to make then utilizes xenon fluoride (XeF
2) removal sacrifice layer 7.Through above-mentioned steps, can form micro-bridge structure 100, referring to Fig. 7 j.
As technical solution of the present invention more on the one hand, the present invention also provides a kind of multiband non-refrigerating infrared focal plane, and rule is arranged or irregularly is placed with a plurality of above-mentioned infrared eyes that can absorb the different-waveband infrared radiation signal on the focal plane.Adopt technical scheme of the present invention, only need single focal plane, can realize the multiband imaging by the sub-wavelength microstructure of on the different detectors on the focal plane, making difformity and array.
The detector of different-waveband response can adopt different arrangement modes, as the medium wave band infrared eye 17 and the long-wave band infrared eye 18 of two waveband non-refrigeration focal surface 201/202 following two kinds of arrangement modes can be arranged:
As shown in Figure 8, two waveband non-refrigeration focal surface 201 adopts the chessboard forms to arrange, resolution on level and vertical both direction in same ratio reduction.Just, if absorb the infrared radiation signal of medium wave band, then at level and vertical both direction every a long-wave band infrared eye 18, extract an image that obtains through 17 collections of medium wave band infrared eye, compare with the focal plane of whole distribution medium wave band infrared eyes 17, resolution has all reduced half in the horizontal and vertical directions.
As shown in Figure 9, the mode that two waveband non-refrigeration focal surface 202 adopts interlacing in the horizontal direction to arrange is arranged, and then resolution reduces half in the horizontal direction, remains unchanged on the vertical direction.Just, if absorb the long-wave band infrared radiation signal, then in the horizontal direction every a medium wave band infrared eye 17, extract an image that obtains through 18 collections of long-wave band infrared eye, compare with the focal plane of whole distribution long-wave band infrared eyes 18, resolution has reduced half in the horizontal direction, but resolution does not change on the vertical direction.In like manner, also interlacing is in vertical direction arranged and is formed infrared focus plane.
Medium wave band infrared eye 17 on above-mentioned Fig. 8, the infrared focus plane shown in Figure 9 is rule with long-wave band infrared eye 18 and arranges, and in addition, a plurality of medium wave band infrared eyes 17 and a plurality of long-wave band infrared eye 18 also can irregularly be arranged.When needs medium wave band infrared radiation signal image, extract the image information of obtaining through medium wave band infrared eye 17; When needs long-wave band infrared radiation signal image, then extract the image information of obtaining via long-wave band infrared eye 18; Perhaps also can be simultaneously to medium wave band and the imaging of long-wave band infrared radiation, and then obtain medium wave infrared radiation image and LONG WAVE INFRARED radiation image respectively by subsequent image processing, concrete grammar is as follows: because after the focal plane completes, the medium wave band infrared eye 17 that distributes on it is fixed with the position relation of long-wave band infrared eye 18, like this after obtaining the view data that whole focal plane obtains, can be as required, such as needs medium wave band infrared radiation signal image, then go out the image information that the medium wave band infrared eye 17 that distributed by the focal plane obtains and constitute medium wave infrared radiation image from the image focal plane extracting data that obtains, if need long-wave band infrared radiation signal image, then go out the image information that the long-wave band infrared eye 18 that distributed by the focal plane obtains and constitute the LONG WAVE INFRARED radiation image from the image focal plane extracting data that obtains.
The present invention realizes the multiband imaging by making the sub-wavelength microstructure at detector surface, but this method is not limited only to non-refrigerated infrared detector, also can be applicable to other type surveys in the imaging technique, for example on imager chips such as refrigeration mode detector, cmos sensor, ccd sensor, all can use, to realize the multiband imaging.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. infrared eye, comprise underlying structure, micro-bridge structure, described underlying structure comprises the silicon substrate substrate that contains sensing circuit, two sensing circuit electrodes, reflection horizon, and described micro-bridge structure comprises microbridge bridge floor, two support columns, two supporting bridge legs, wherein
Described reflection horizon is positioned on the end face of described silicon substrate substrate; Described two sensing circuit electrodes are diagonal line and distribute, and are positioned on the same end face of described silicon substrate substrate with described reflection horizon, and do not contact mutually with described reflection horizon;
Described two supporting bridge legs respectively have an end to link to each other with described microbridge bridge floor, and the other end links to each other with the suprabasil sensing circuit of described silicon substrate respectively with two sensing circuit electrodes via described two support columns; Make described microbridge bridge floor be suspended on the described reflection horizon, between described microbridge bridge floor and described reflection horizon, form an optical resonator;
Described microbridge bridge floor upwards is distributed with supporting layer, heat-sensitive layer, passivation layer successively from described optical resonator, it is characterized in that, described microbridge bridge floor also comprises an electromagnetic wave excites layer, and described electromagnetic wave excites layer is positioned on the described passivation layer, closely contacts with described passivation layer.
2. according to the described infrared eye of claim 1, it is characterized in that described electromagnetic wave excites layer is realized by make array type sub-wavelength microstructure on polarization material.
3. according to the described infrared eye of claim 2, it is characterized in that, described polarization material be can with the metal material of the infrared radiation signal generation coupling of outside input or dielectric substance in a kind of.
4. according to the described infrared eye of claim 3, it is characterized in that,
Described metal material is a kind of in gold, silver, platinum, nickel, titanium, the tungsten;
Described dielectric substance is a kind of in silit, zinc paste, the gallium arsenide.
5. according to the described infrared eye of claim 2, it is characterized in that described array type sub-wavelength microstructure forms by a plurality of microstructure units are regularly arranged.
6. according to the described infrared eye of claim 5, it is characterized in that, described microstructure unit be shaped as in rectangle, circle, the polygon one or more.
7. according to claim 5 or 6 described infrared eyes, it is characterized in that,
The cycle of described microstructure unit selects the centre wavelength of wave band identical with desire substantially, and the size of described microstructure unit is about half of cycle.
8. a method of making infrared eye is characterized in that,
The first step, make underlying structure: utilize electron beam evaporation or magnetically controlled sputter method in the silicon substrate substrate, to be coated with one or more metals in nickel chromium triangle, aluminium or the titanium nitride, on the same end face of described silicon substrate substrate, to form reflection horizon and two sensing circuit electrodes, realize graphical again by stripping technology, dry etching or wet etching method;
In second step, make sacrifice layer: adopt spin coating method to make described sacrifice layer to Photosensitive polyimide or non-photosensitivity type polyimide; Perhaps, adopt chemical gaseous phase depositing process to make described sacrifice layer to silicon dioxide or polysilicon;
In the 3rd step, make the sacrifice layer through hole: on the described sacrifice layer of making by the Photosensitive polyimide, make the sacrifice layer through hole by photoetching method; Perhaps, on the described sacrifice layer of making by non-photosensitivity type polyimide, silicon dioxide or polysilicon, make the sacrifice layer through hole by dry etching method;
In the 4th step, make the supporting layer in the micro-bridge structure: use any material in silicon nitride, monox, silicon oxynitride or the silit, adopt chemical gaseous phase depositing process to make and form described supporting layer;
In the 5th step, make the heat-sensitive layer in the micro-bridge structure: adopt reactive sputtering method to be coated with to vanadium oxide and form described heat-sensitive layer; Perhaps, the amorphous silicon using plasma is strengthened chemical gaseous phase depositing process and be coated with the described heat-sensitive layer of formation; And then realize graphical by dry etching;
In the 6th step, make the passivation layer in the micro-bridge structure: use any material in silicon nitride, monox, silicon oxynitride or the silit, adopt chemical gas-phase deposition method to make and form described passivation layer;
In the 7th step, make sensing circuit electrode contact hole and heat-sensitive layer contact hole: utilize and mix the etching gas that constitutes with fluoroform, adopt dry etching method to form sensing circuit electrode contact hole and heat-sensitive layer contact hole by oxygen;
In the 8th step, make the Metal Contact electrode layer: use any metal in titanium, aluminium, titanium nitride, the vanadium, adopt electron beam evaporation or magnetron sputtering to make described Metal Contact electrode layer, and then realize graphical by dry etching method;
The 9th step, make the electromagnetic wave excites layer in the micro-bridge structure: adopt magnetically controlled sputter method or chemical gaseous phase depositing process to make and form described electromagnetic wave excites layer, and then it is graphical to utilize dry etching method or wet etching method to realize, forms array type sub-wavelength microstructure;
The tenth step etched micro-bridge structure, removed described sacrifice layer, discharged micro-bridge structure: adopt dry etching method to etch micro-bridge structure earlier; Adopt following method to remove described sacrifice layer again: to utilize the oxygen plasma dry method to remove the described sacrifice layer of making by Photosensitive polyimide or non-photosensitivity type polyimide; Perhaps, utilize hydrogen fluoride gas to remove the described sacrifice layer of making by silicon dioxide; Perhaps, utilize xenon fluoride to remove the described sacrifice layer of making by polysilicon.
9. according to the method for the described making infrared eye of claim 8, it is characterized in that the thickness of described electromagnetic wave excites layer is 50nm～200nm.
10. a multiband non-refrigerating infrared focal plane is characterized in that, on the described focal plane rule arrange or irregular be placed with a plurality of as each described infrared eye that can absorb the different-waveband infrared radiation signal of claim 1 to 7.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105684733A CN102175329B (en) | 2010-12-01 | 2010-12-01 | Infrared detector, manufacturing method thereof and multiband uncooled infrared focal plane |
| PCT/CN2011/071489 WO2012071820A1 (en) | 2010-12-01 | 2011-03-03 | Infrared detector and method of manufacture thereof and multi-band uncooled infrared focal plane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105684733A CN102175329B (en) | 2010-12-01 | 2010-12-01 | Infrared detector, manufacturing method thereof and multiband uncooled infrared focal plane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102175329A true CN102175329A (en) | 2011-09-07 |
| CN102175329B CN102175329B (en) | 2012-11-21 |
Family
ID=44518539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105684733A Active CN102175329B (en) | 2010-12-01 | 2010-12-01 | Infrared detector, manufacturing method thereof and multiband uncooled infrared focal plane |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102175329B (en) |
| WO (1) | WO2012071820A1 (en) |
Cited By (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103117287A (en) * | 2013-01-25 | 2013-05-22 | 四川大学 | Non-refrigerating film infrared focal plane array detector structure and production method thereof |
| CN103193190A (en) * | 2013-04-11 | 2013-07-10 | 电子科技大学 | Infrared-terahertz dual-band array detector microbridge structure and preparation method thereof |
| CN103579406A (en) * | 2013-10-10 | 2014-02-12 | 中国科学院上海技术物理研究所 | Infrared detector structure for improving spectral flatness |
| CN103575407A (en) * | 2012-07-18 | 2014-02-12 | 北京大学 | Terahertz radiation detector |
| CN103592024A (en) * | 2013-10-29 | 2014-02-19 | 中国科学院长春光学精密机械与物理研究所 | Double-diffraction-level Offner imaging spectrometer |
| CN103616739A (en) * | 2013-12-07 | 2014-03-05 | 中北大学 | Integrated manufacturing method of optical microspherical cavity made of wafer-level polymer |
| CN104332392A (en) * | 2014-09-04 | 2015-02-04 | 北方广微科技有限公司 | Dry etching method of anisotropic VO2 |
| CN104330169A (en) * | 2014-08-15 | 2015-02-04 | 中国空空导弹研究院 | Non-refrigeration millimeter-wave/infrared lamination detector |
| CN104528630A (en) * | 2014-12-16 | 2015-04-22 | 复旦大学 | Method for preparing infrared source modification layer |
| CN104538483A (en) * | 2014-12-16 | 2015-04-22 | 复旦大学 | Infrared light source and preparation method thereof |
| CN105004430A (en) * | 2015-07-28 | 2015-10-28 | 昆明物理研究所 | Uncooled infrared focal plane detector photoelectric sensitive unit |
| CN105371966A (en) * | 2015-11-13 | 2016-03-02 | 南方科技大学 | Novel bolometer and manufacturing method |
| CN105486412A (en) * | 2015-12-31 | 2016-04-13 | 武汉高芯科技有限公司 | Uncooled infrared focal plane array detector with overlap vertical bridge legs |
| CN106517077A (en) * | 2016-10-28 | 2017-03-22 | 中国科学院微电子研究所 | Infrared detector and manufacturing method thereof |
| CN106564851A (en) * | 2016-10-31 | 2017-04-19 | 武汉高芯科技有限公司 | Three-layer microbridge structure and micro-bolometer |
| CN106595876A (en) * | 2016-11-30 | 2017-04-26 | 武汉高芯科技有限公司 | Pixel used for integrating efficient element and optical reference element and micro-bolometer |
| CN106698331A (en) * | 2017-01-17 | 2017-05-24 | 中国科学院上海微***与信息技术研究所 | monocrystalline silicon infrared thermopile structure with beam film structure and production method thereof |
| CN106989828A (en) * | 2016-01-20 | 2017-07-28 | 优利斯公司 | The method of electromagnetic radiation detector of the manufacture with micro-capsule |
| CN107117579A (en) * | 2017-05-11 | 2017-09-01 | 烟台睿创微纳技术股份有限公司 | A kind of double-deck polarization non-refrigerated infrared detector structure and preparation method thereof |
| CN107117578A (en) * | 2017-05-11 | 2017-09-01 | 烟台睿创微纳技术股份有限公司 | A kind of non-brake method Two-color Infrared Detectors MEMS chip and its manufacture method |
| CN108180991A (en) * | 2018-03-05 | 2018-06-19 | 清华大学 | A kind of infrared narrowband heat radiator and preparation method |
| CN109164463A (en) * | 2018-09-25 | 2019-01-08 | 北京理工大学 | A kind of the polarization thermal imaging method and device of the overlapping of multiple aperture field of view portion |
| CN109163809A (en) * | 2018-09-25 | 2019-01-08 | 北京理工大学 | The two waveband thermal imaging method and device of multiple aperture field of view portion overlapping |
| CN109253743A (en) * | 2018-11-12 | 2019-01-22 | 中国科学院长春光学精密机械与物理研究所 | Phasmon sound wave resonance dual waveband infrared sensor |
| CN109459144A (en) * | 2018-11-12 | 2019-03-12 | 中国科学院长春光学精密机械与物理研究所 | Wide spectrum infrared sensor based on piezoelectric effect and compound phasmon |
| CN109473359A (en) * | 2018-12-29 | 2019-03-15 | 杭州北芯传感科技有限公司 | Bridge-type hotting mask structure micro-heater and preparation method and electronic nose array |
| CN109813447A (en) * | 2019-01-31 | 2019-05-28 | 中国科学院长春光学精密机械与物理研究所 | The non-refrigerating infrared focal plane and production method of integrated broadband artificial surface |
| CN110118605A (en) * | 2019-05-30 | 2019-08-13 | 中国科学院长春光学精密机械与物理研究所 | A kind of mode of resonance wide spectrum non-refrigerated infrared detector and preparation method thereof |
| CN110577188A (en) * | 2019-09-19 | 2019-12-17 | 中国科学院上海微***与信息技术研究所 | Method for manufacturing suspended infrared thermopile on substrate |
| CN111192890A (en) * | 2020-01-10 | 2020-05-22 | 电子科技大学 | Single-pixel infrared and visible light dual-band sensor and array |
| CN111952394A (en) * | 2020-07-06 | 2020-11-17 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN112174086A (en) * | 2019-07-04 | 2021-01-05 | 深圳市汇顶科技股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN112327474A (en) * | 2020-11-11 | 2021-02-05 | 中国科学院上海技术物理研究所 | Micro-mirror structure and forming method, micro-mirror array and detector |
| CN112748474A (en) * | 2020-12-31 | 2021-05-04 | 上海集成电路研发中心有限公司 | Efficient infrared detector structure |
| CN113488558A (en) * | 2021-07-06 | 2021-10-08 | 中国科学院半导体研究所 | Infrared detector and preparation method thereof |
| CN113494974A (en) * | 2020-03-18 | 2021-10-12 | 高尔科技股份有限公司 | Infrared heat energy sensor |
| TWI836324B (en) * | 2021-08-06 | 2024-03-21 | 財團法人工業技術研究院 | Microelectromechanical infrared sensing appartus and fabrication method thereof |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012217881A1 (en) * | 2012-10-01 | 2014-04-03 | Siemens Aktiengesellschaft | Sensor arrangement and manufacturing method |
| CN110160658B (en) * | 2019-05-17 | 2023-11-07 | 中国科学院上海技术物理研究所 | Etching enhancement type uncooled infrared film detector and preparation method thereof |
| CN111584671A (en) * | 2020-04-23 | 2020-08-25 | 中国科学院上海技术物理研究所 | High-performance narrow-band infrared detector based on microcavity resonance frequency selection |
| CN112456434B (en) * | 2020-11-05 | 2022-12-09 | 南京大学 | Method for preparing terahertz detector based on suspended microbridge process |
| CN113654664B (en) * | 2021-08-13 | 2024-05-10 | 中国科学院上海技术物理研究所 | Spectral separation and full-transmission composite super-pixel infrared detector |
| CN114389046B (en) * | 2022-01-05 | 2023-05-30 | 电子科技大学 | Infrared electromagnetic periodic structure with selective absorption and beam anisotropic reflection functions |
| CN114485951B (en) * | 2022-01-13 | 2024-01-30 | 北京安酷智芯科技有限公司 | Planar image sensor |
| CN115060371B (en) * | 2022-07-27 | 2022-11-01 | 北京中科海芯科技有限公司 | Micro-bolometer, manufacturing method and infrared detector |
| CN116793504A (en) * | 2023-08-23 | 2023-09-22 | 北京中科海芯科技有限公司 | Novel thermal radiation infrared detector and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1915796A (en) * | 2006-09-08 | 2007-02-21 | 中国科学院上海微***与信息技术研究所 | Light reading out, not refrigerant infrared imaging array device, and fabricating metod |
| CN101774530A (en) * | 2010-02-03 | 2010-07-14 | 电子科技大学 | Microbolometer and preparation method thereof |
| CN202066596U (en) * | 2010-12-01 | 2011-12-07 | 烟台艾睿光电科技有限公司 | Infrared detector and multiband uncooled infrared focal plane |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004170508A (en) * | 2002-11-18 | 2004-06-17 | Canon Inc | Micro structural body |
| EP1671375A4 (en) * | 2003-10-09 | 2009-11-25 | Ocas Corp | Bolometric infrared sensor having two layer structure and method for manufacturing the same |
| US7629582B2 (en) * | 2006-10-24 | 2009-12-08 | Raytheon Company | Dual band imager with visible or SWIR detectors combined with uncooled LWIR detectors |
| CN101881666A (en) * | 2009-05-08 | 2010-11-10 | 世纪晶源科技有限公司 | Film-type pyroelectric infrared sensor and preparation method thereof |
| CN101881664A (en) * | 2009-05-08 | 2010-11-10 | 世纪晶源科技有限公司 | Air adiabatic diaphragm type infrared sensor |
| CN101713688B (en) * | 2009-12-11 | 2011-02-09 | 中国电子科技集团公司第十三研究所 | MEMS non-refrigerated two-band infrared detector and preparation method thereof |
-
2010
- 2010-12-01 CN CN2010105684733A patent/CN102175329B/en active Active
-
2011
- 2011-03-03 WO PCT/CN2011/071489 patent/WO2012071820A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1915796A (en) * | 2006-09-08 | 2007-02-21 | 中国科学院上海微***与信息技术研究所 | Light reading out, not refrigerant infrared imaging array device, and fabricating metod |
| CN101774530A (en) * | 2010-02-03 | 2010-07-14 | 电子科技大学 | Microbolometer and preparation method thereof |
| CN202066596U (en) * | 2010-12-01 | 2011-12-07 | 烟台艾睿光电科技有限公司 | Infrared detector and multiband uncooled infrared focal plane |
Cited By (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103575407A (en) * | 2012-07-18 | 2014-02-12 | 北京大学 | Terahertz radiation detector |
| CN103117287A (en) * | 2013-01-25 | 2013-05-22 | 四川大学 | Non-refrigerating film infrared focal plane array detector structure and production method thereof |
| CN103193190A (en) * | 2013-04-11 | 2013-07-10 | 电子科技大学 | Infrared-terahertz dual-band array detector microbridge structure and preparation method thereof |
| CN103193190B (en) * | 2013-04-11 | 2015-07-29 | 电子科技大学 | Infrared-terahertz dual-band array detector microbridge structure and preparation method thereof |
| CN103579406A (en) * | 2013-10-10 | 2014-02-12 | 中国科学院上海技术物理研究所 | Infrared detector structure for improving spectral flatness |
| CN103592024A (en) * | 2013-10-29 | 2014-02-19 | 中国科学院长春光学精密机械与物理研究所 | Double-diffraction-level Offner imaging spectrometer |
| CN103616739B (en) * | 2013-12-07 | 2015-05-27 | 中北大学 | Integrated manufacturing method of optical microspherical cavity made of wafer-level polymer |
| CN103616739A (en) * | 2013-12-07 | 2014-03-05 | 中北大学 | Integrated manufacturing method of optical microspherical cavity made of wafer-level polymer |
| CN104330169B (en) * | 2014-08-15 | 2017-05-03 | 中国空空导弹研究院 | Non-refrigeration millimeter-wave/infrared lamination detector |
| CN104330169A (en) * | 2014-08-15 | 2015-02-04 | 中国空空导弹研究院 | Non-refrigeration millimeter-wave/infrared lamination detector |
| CN104332392A (en) * | 2014-09-04 | 2015-02-04 | 北方广微科技有限公司 | Dry etching method of anisotropic VO2 |
| CN104332392B (en) * | 2014-09-04 | 2017-04-05 | 北方广微科技有限公司 | A kind of anisotropic dry etch VO2Method |
| CN104538483A (en) * | 2014-12-16 | 2015-04-22 | 复旦大学 | Infrared light source and preparation method thereof |
| CN104528630A (en) * | 2014-12-16 | 2015-04-22 | 复旦大学 | Method for preparing infrared source modification layer |
| CN105004430A (en) * | 2015-07-28 | 2015-10-28 | 昆明物理研究所 | Uncooled infrared focal plane detector photoelectric sensitive unit |
| CN105004430B (en) * | 2015-07-28 | 2019-12-06 | 昆明物理研究所 | Photoelectric sensitive unit of uncooled infrared focal plane detector |
| CN105371966A (en) * | 2015-11-13 | 2016-03-02 | 南方科技大学 | Novel bolometer and manufacturing method |
| CN105371966B (en) * | 2015-11-13 | 2019-01-11 | 南方科技大学 | Novel bolometer and manufacturing method |
| CN105486412A (en) * | 2015-12-31 | 2016-04-13 | 武汉高芯科技有限公司 | Uncooled infrared focal plane array detector with overlap vertical bridge legs |
| CN106989828A (en) * | 2016-01-20 | 2017-07-28 | 优利斯公司 | The method of electromagnetic radiation detector of the manufacture with micro-capsule |
| CN106517077A (en) * | 2016-10-28 | 2017-03-22 | 中国科学院微电子研究所 | Infrared detector and manufacturing method thereof |
| CN106564851A (en) * | 2016-10-31 | 2017-04-19 | 武汉高芯科技有限公司 | Three-layer microbridge structure and micro-bolometer |
| CN106564851B (en) * | 2016-10-31 | 2018-09-21 | 武汉高芯科技有限公司 | Three layers of micro-bridge structure and micro-metering bolometer |
| CN106595876A (en) * | 2016-11-30 | 2017-04-26 | 武汉高芯科技有限公司 | Pixel used for integrating efficient element and optical reference element and micro-bolometer |
| CN106698331A (en) * | 2017-01-17 | 2017-05-24 | 中国科学院上海微***与信息技术研究所 | monocrystalline silicon infrared thermopile structure with beam film structure and production method thereof |
| CN106698331B (en) * | 2017-01-17 | 2018-11-02 | 中国科学院上海微***与信息技术研究所 | A kind of infrared thermal reactor structure of the monocrystalline silicon comprising beam diaphragm structure and preparation method thereof |
| CN107117578A (en) * | 2017-05-11 | 2017-09-01 | 烟台睿创微纳技术股份有限公司 | A kind of non-brake method Two-color Infrared Detectors MEMS chip and its manufacture method |
| CN107117579A (en) * | 2017-05-11 | 2017-09-01 | 烟台睿创微纳技术股份有限公司 | A kind of double-deck polarization non-refrigerated infrared detector structure and preparation method thereof |
| CN107117578B (en) * | 2017-05-11 | 2019-01-29 | 烟台睿创微纳技术股份有限公司 | A kind of non-brake method Two-color Infrared Detectors MEMS chip and its manufacturing method |
| CN108180991A (en) * | 2018-03-05 | 2018-06-19 | 清华大学 | A kind of infrared narrowband heat radiator and preparation method |
| CN109163809A (en) * | 2018-09-25 | 2019-01-08 | 北京理工大学 | The two waveband thermal imaging method and device of multiple aperture field of view portion overlapping |
| CN109163809B (en) * | 2018-09-25 | 2020-10-13 | 北京理工大学 | Multi-aperture view field partially overlapped dual-band thermal imaging method and device |
| CN109164463A (en) * | 2018-09-25 | 2019-01-08 | 北京理工大学 | A kind of the polarization thermal imaging method and device of the overlapping of multiple aperture field of view portion |
| CN109253743A (en) * | 2018-11-12 | 2019-01-22 | 中国科学院长春光学精密机械与物理研究所 | Phasmon sound wave resonance dual waveband infrared sensor |
| CN109459144A (en) * | 2018-11-12 | 2019-03-12 | 中国科学院长春光学精密机械与物理研究所 | Wide spectrum infrared sensor based on piezoelectric effect and compound phasmon |
| CN109473359A (en) * | 2018-12-29 | 2019-03-15 | 杭州北芯传感科技有限公司 | Bridge-type hotting mask structure micro-heater and preparation method and electronic nose array |
| CN109473359B (en) * | 2018-12-29 | 2024-04-19 | 南京汉工激光科技有限公司 | Bridge type thermal film structure micro-heater, preparation method and electronic nose array |
| CN109813447A (en) * | 2019-01-31 | 2019-05-28 | 中国科学院长春光学精密机械与物理研究所 | The non-refrigerating infrared focal plane and production method of integrated broadband artificial surface |
| CN109813447B (en) * | 2019-01-31 | 2021-08-31 | 中国科学院长春光学精密机械与物理研究所 | Uncooled infrared focal plane integrated with broadband artificial surface and manufacturing method thereof |
| CN110118605A (en) * | 2019-05-30 | 2019-08-13 | 中国科学院长春光学精密机械与物理研究所 | A kind of mode of resonance wide spectrum non-refrigerated infrared detector and preparation method thereof |
| CN112174086A (en) * | 2019-07-04 | 2021-01-05 | 深圳市汇顶科技股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN110577188A (en) * | 2019-09-19 | 2019-12-17 | 中国科学院上海微***与信息技术研究所 | Method for manufacturing suspended infrared thermopile on substrate |
| CN111192890A (en) * | 2020-01-10 | 2020-05-22 | 电子科技大学 | Single-pixel infrared and visible light dual-band sensor and array |
| CN113494974A (en) * | 2020-03-18 | 2021-10-12 | 高尔科技股份有限公司 | Infrared heat energy sensor |
| CN111952394B (en) * | 2020-07-06 | 2021-04-23 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN111952394A (en) * | 2020-07-06 | 2020-11-17 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN112327474A (en) * | 2020-11-11 | 2021-02-05 | 中国科学院上海技术物理研究所 | Micro-mirror structure and forming method, micro-mirror array and detector |
| CN112748474A (en) * | 2020-12-31 | 2021-05-04 | 上海集成电路研发中心有限公司 | Efficient infrared detector structure |
| CN113488558A (en) * | 2021-07-06 | 2021-10-08 | 中国科学院半导体研究所 | Infrared detector and preparation method thereof |
| TWI836324B (en) * | 2021-08-06 | 2024-03-21 | 財團法人工業技術研究院 | Microelectromechanical infrared sensing appartus and fabrication method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012071820A1 (en) | 2012-06-07 |
| CN102175329B (en) | 2012-11-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102175329A (en) | Infrared detector, manufacturing method thereof and multiband uncooled infrared focal plane | |
| US8502149B2 (en) | Thermal detector, thermal detection device, electronic instrument, and thermal detector manufacturing method | |
| JP6084018B2 (en) | Terahertz region electromagnetic radiation bolometer detector and detector array device including the same | |
| JP5636787B2 (en) | Thermal photodetector, thermal photodetector, and electronic device | |
| CN202066596U (en) | Infrared detector and multiband uncooled infrared focal plane | |
| CN110118604B (en) | Wide-spectrum microbolometer based on mixed resonance mode and preparation method thereof | |
| CN106298827A (en) | A kind of non-refrigerated infrared focal plane probe pixel and preparation method thereof | |
| CN107150995B (en) | A kind of polarization sensitive non-refrigerated infrared detector and preparation method thereof | |
| CN107121191A (en) | A kind of self-adapting tuning infrared multispectral detects micro-system | |
| EP3522217B1 (en) | Method to prepare pixel for uncooled infrared focal plane detector | |
| CN106124066A (en) | The microbolometer of a kind of high fill factor and preparation method | |
| CN106340561A (en) | Novel uncooled infrared focal plane detector pixel and fabrication method thereof | |
| US10900841B2 (en) | Radiation detector and method for manufacturing a radiation detector | |
| CN106784165A (en) | A kind of novel double-layer non-refrigerated infrared focal plane probe dot structure and preparation method thereof | |
| US9945729B2 (en) | Systems and methods for enhanced bolometer response | |
| US8067737B1 (en) | Photonic detector, imaging system and method employing plasmonic resonance absorption | |
| CN105811061B (en) | A kind of bridge leg separate antenna coupling micro-bridge structure and preparation method thereof | |
| CN113447148B (en) | Infrared focal plane detector | |
| CN111121978A (en) | Broadband non-refrigeration infrared polarization sensitive pixel structure, array and preparation method | |
| CN113447140A (en) | CMOS infrared microbridge detector | |
| CN103959024A (en) | Microbolometer detector layer | |
| CN113432727B (en) | Non-refrigeration solid focal plane detector | |
| KR101180647B1 (en) | Design of pixel for more higher fill factor wherein microbolometer | |
| Malone et al. | Staring MWIR, LWIR and 2-color and scanning LWIR polarimetry technology | |
| CN107478336A (en) | Terahertz imaging array chip and preparation method thereof, imaging system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: 264006 Yantai economic and Technological Development Zone, Guiyang, No. 11 main street, Shandong Patentee after: Yantai Rui micro nano technology Limited by Share Ltd Address before: 539 room 3, E District, 32 overseas Chinese Pioneer Park, Yantai economic and Technological Development Zone, Yantai, Shandong, Zhujianglu Road 264006, China Patentee before: Yantai Raytron Technology Co., Ltd. |