WO2012047042A2 - 미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법 - Google Patents
미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법 Download PDFInfo
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- WO2012047042A2 WO2012047042A2 PCT/KR2011/007413 KR2011007413W WO2012047042A2 WO 2012047042 A2 WO2012047042 A2 WO 2012047042A2 KR 2011007413 W KR2011007413 W KR 2011007413W WO 2012047042 A2 WO2012047042 A2 WO 2012047042A2
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- Prior art keywords
- organic
- wire
- forming
- inorganic hybrid
- mask pattern
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
- H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/164—Coating processes; Apparatus therefor using electric, electrostatic or magnetic means; powder coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to a method of forming a fine pattern using an organic wire or an organic-inorganic hybrid wire, and more particularly, to a method of forming a fine pattern using an organic wire or an organic-inorganic hybrid wire as a patterning mask and an electronic device using the same. It relates to a method of forming.
- the nanowire electrode made through this method has a nanogap having a size of at least 5 nm, which is advantageous in terms of fabrication of high resolution nanoscale devices.
- the process has the following problems. 1) The process can not accurately control the position and direction of the nano-gap because the nano-wires are randomly sprayed. The process cannot be used for the integration of nanoscale devices because the arrangement and orientation of nanoscale devices must be adjustable to regularly arrange the nanoscale devices. 2) In order to make a device using the metal nanowires produced by the above process, it is necessary to deposit a probe electrode at both ends of the metal nanowires. This requires the use of expensive E-beam lithography techniques, making the process unsuitable for large area or mass production. 3) The above process is poor in reproducibility, so it is difficult to apply to actual devices.
- a method of forming a fine pattern may include forming an organic wire or organic / inorganic hybrid wire mask pattern having a circular or elliptical cross section on a substrate; Forming a material layer on an entire surface of the substrate on which the organic wire or organic / inorganic hybrid wire mask pattern is formed; And removing the organic wire or organic / inorganic hybrid wire mask pattern from the substrate such that only the material layer of the portion where the organic wire or organic / inorganic hybrid wire mask pattern is not formed remains. It includes.
- the organic wire or organic-inorganic hybrid wire mask pattern having a circular or oval cross section may include electric field assisted robotic nozzle printing, direct tip drawing, meniscus-guided direct writing, It can be prepared using melt spinning, wet spinning, dry spinning, gel spinning, or electrospinning.
- the electric field assisted robotic nozzle printer used in the electric field assisted robotic nozzle printing method includes a solution storage device for supplying a solution for discharging, a nozzle for discharging a solution supplied from the solution storage device, and a voltage for applying a high voltage to the nozzle Device, a flat and movable collector, in which organic wires or organic-inorganic hybrid wires formed by discharge from the nozzles are aligned, robot stages installed under the collector and capable of moving the collector in the xy direction (horizontal direction), a micro-range adjuster for adjusting the distance between the nozzle and the collector in a z-direction (vertical direction), and a stone platform under the robot stage to maintain a plan view of the collector and to suppress vibrations generated during operation of the robot stage. It may include.
- Forming an organic wire or organic-inorganic hybrid wire mask pattern through the electric field assisted robotic nozzle printing equipment comprises the steps of preparing an organic solution by mixing an organic or organic-inorganic hybrid material in distilled water or an organic solvent; Placing the organic solution in the solution storage device of the electric field assisted robotic nozzle printer; Discharging the organic solution in the solution storage device from the nozzle while applying a high voltage to the nozzle through the voltage application device of the electric field assisting robotic nozzle printer; And aligning an organic wire or an organic-inorganic hybrid wire formed from the organic solution discharged from the nozzle onto the substrate on the collector while moving the collector; It may include.
- a method of forming a fine pattern is provided. Forming a pattern forming layer on the substrate; Forming an organic wire or organic-inorganic hybrid wire etching mask pattern having a circular or elliptical cross section on the substrate; Etching the pattern forming layer using the organic wire or organic / inorganic hybrid wire etching mask pattern as an etching mask; And selectively removing the organic wire or organic / inorganic hybrid wire etching mask pattern from the substrate. It includes.
- the organic wire or organic-inorganic hybrid wire etch mask pattern having a circular or elliptical cross section can be used for electric field assisted robotic nozzle printing, direct tip drawing, meniscus guided direct writing, melt spinning, wet spinning, dry spinning, gel spinning. Or electrospinning.
- a method of forming a microchannel transistor having a bottom-gate structure may include forming a gate electrode on a substrate; Forming a gate insulating film on the gate electrode; Forming an organic wire or organic / inorganic hybrid wire mask pattern having a circular or elliptical cross section on the gate insulating film; Forming a material layer for a source electrode and a drain electrode on the gate insulating layer and the organic wire or organic / inorganic hybrid wire mask pattern; Lifting off the organic wire or organic / inorganic hybrid wire mask pattern from the substrate to form a source electrode and a drain electrode; And forming an active layer on the source electrode and the drain electrode.
- a method of forming a microchannel transistor having a top-gate structure may include forming an organic wire or organic / inorganic hybrid wire mask pattern having a circular or elliptical cross section on a substrate; Forming a material layer for a source electrode and a drain electrode on the organic wire or organic / inorganic hybrid wire mask pattern; Lifting off the organic wire or organic / inorganic hybrid wire mask pattern from the substrate to form a source electrode and a drain electrode; Forming an active layer on the source electrode and the drain electrode; Forming a gate insulating film on the active layer; Forming a gate electrode on the gate insulating film; It includes.
- the organic wire or organic-inorganic hybrid wire mask pattern having a circular or oval cross section may be used for electric field assisted robotic nozzle printing, direct tip drawing, meniscus guided direct writing, melt spinning, wet spinning, dry spinning, gel spinning, Or by electrospinning.
- the active layer is thermal evaporation, E-beam evaporation, atomic layer deposition, chemical vapor deposition, spin-coating, dip-coating. It may be formed by coating, drop-casting or sputtering. Alternatively, the active layer may be formed in the form of an organic wire using an electric field assisted robotic nozzle printer.
- a method of forming a microchannel light emitting transistor having a bottom-gate structure may include forming a gate electrode on a substrate; Forming a gate insulating film on the gate electrode; Forming an organic wire or organic / inorganic hybrid wire mask pattern having a circular or elliptical cross section on the gate insulating film; Forming a material layer for a source electrode and a drain electrode on the gate insulating layer and the organic wire or organic / inorganic hybrid wire mask pattern; Lifting off the organic wire or organic / inorganic hybrid wire mask pattern from the substrate to form a source electrode and a drain electrode; Forming a light emitting active layer on the source electrode and the drain electrode; It includes.
- a method of forming a microchannel light emitting transistor having a top-gate structure may include forming an organic wire or organic / inorganic hybrid wire mask pattern having a circular or elliptical cross section on a substrate; Forming a material layer for a source electrode and a drain electrode on the organic wire or organic / inorganic hybrid wire mask pattern; Lifting off the organic wire or organic / inorganic hybrid wire mask pattern from the substrate to form a source electrode and a drain electrode; Forming a light emitting active layer on the source electrode and the drain electrode; Forming a gate insulating film on the light emitting active layer; Forming a gate electrode on the gate insulating film; It includes.
- the organic wire or organic-inorganic hybrid wire mask pattern having a circular or oval cross section may be used for electric field assisted robotic nozzle printing, direct tip drawing, meniscus guided direct writing, melt spinning, wet spinning, dry spinning, gel spinning, Or by electrospinning.
- the light emitting active layer may include particles, quantum dots, rods, wires, and thin films of an inorganic light emitting semiconductor selected from the group consisting of GaAs, AlGaAs, GaP, AlGaP, InGaP, GaN, InGaN, ZnSe, CdSe, CdTe and CdS; Poly (9-vinylcarbazole) or derivatives thereof, F8T2 (poly (9,9'-dioctylfluorene-co-bithiophene)) or derivatives thereof, F8BT (poly (9,9-dioctylfluorene-) co-benzothiadiazole)) or derivatives thereof, poly (p-phenylenevinylene) or derivatives thereof, poly (p-phenylene) or derivatives thereof, polyaniline (polyaniline) or derivatives thereof, polythiophene or derivatives thereof, polypyrrole or derivatives thereof, polyfluorene or derivatives thereof and poly
- the light emitting active layer may further include an ionic dopant to facilitate the injection of holes and electrons.
- the ionic dopant may include TPABF 4 (Tetrapropylammonium tetrafluoroborate), TBABF 4 (Tetrabutylammonium tetrafluoroborate), LiOTf (Lithium trifluoromethanesulfonate), KTf (Potassium trifluoromethanesulfonate) or NaTf (Sodium trifluoromethanesulfonate).
- the luminescent active layer may be formed by thermal deposition, electron beam deposition, atomic layer deposition, chemical vapor deposition, spin coating, dip coating, drop casting or sputtering.
- the light emitting active layer may be formed in the form of an organic wire by using an electric field assisted robotic nozzle printer.
- a pattern forming method having a fine gap.
- An organic wire or organic / inorganic hybrid wire mask pattern having a circular or oval cross section is formed, and a material layer is formed thereon.
- the hybrid wire mask pattern By removing the hybrid wire mask pattern, it is possible to accurately form a pattern having a large spacing at a desired position in a large area. Since the formation of the organic wire or the organic-inorganic hybrid wire mask pattern may be performed at room temperature and atmospheric pressure, it is possible to replace conventional expensive fine pattern formation methods such as photolithography or electron beam lithography.
- a high-performance transistor device having a microchannel can be manufactured by forming source and drain electrodes having a fine spacing through the organic wire or organic / inorganic hybrid wire mask pattern.
- a method of forming a microchannel light emitting transistor forms a source and drain electrode having a fine spacing through the organic wire or organic / inorganic hybrid wire mask pattern, thereby forming holes and electrons through the source and drain electrodes.
- a source and drain electrode having a fine spacing through the organic wire or organic / inorganic hybrid wire mask pattern, thereby forming holes and electrons through the source and drain electrodes.
- FIG. 1 is a flowchart illustrating a method of forming a fine pattern in order according to an embodiment of the present invention.
- FIGS. 2A and 2B illustrate an electric field assisted robotic nozzle printer 100 used to form an organic wire or organic / inorganic hybrid wire mask by electric field assisted robotic nozzle printing, respectively, in forming a fine pattern according to one embodiment of the present invention. Schematic perspective and side views.
- 3A to 3C are cross-sectional views illustrating a method of forming a pattern having a fine interval according to one embodiment of the present invention in order of process.
- FIGS. 3A to 3C are perspective views corresponding to FIGS. 3A to 3C.
- 5A through 5D are cross-sectional views illustrating a method of forming a micro-channel transistor having a bottom-gate structure according to an embodiment of the present invention.
- 6A through 6D are cross-sectional views illustrating a method of forming a microchannel transistor having a top-gate structure according to an embodiment of the present invention.
- 7A to 7D are cross-sectional views for describing a method of forming a fine pattern according to an embodiment of the present invention in order of process.
- FIG. 8 is a scanning electron microscopic micrograph of a gold pattern having nano-gaps formed by Example 1.
- FIG. 9 is an SEM photograph of a square pattern made of gold having nano-gaps formed by Example 2.
- FIG. 10A and 10B are SEM images of the nanochannel pentacene thin film transistor formed in Example 3.
- FIG. 10A and 10B are SEM images of the nanochannel pentacene thin film transistor formed in Example 3.
- FIG. 11 is a graph of drain current versus gate voltage of a nanochannel pentacene thin film transistor formed in Example 3.
- FIG. 11 is a graph of drain current versus gate voltage of a nanochannel pentacene thin film transistor formed in Example 3.
- FIG. 12 is a SEM photograph of the nanochannel organic nanowire transistor formed in Example 4.
- FIG. 13 is a graph of nanochannel organic nanowire drain current versus gate voltage formed in Example 4.
- FIG. 14 is an optical micrograph of the nanochannel F8T2 thin film light emitting transistor formed in Example 6.
- organic-inorganic hybrid means that an organic material and an inorganic material are mixed.
- FIG. 1 is a flowchart illustrating a method of forming a fine pattern in order according to an embodiment of the present invention.
- an organic wire or an organic / inorganic hybrid wire mask pattern is formed on a substrate (S110).
- the organic wire or organic-inorganic hybrid wire mask pattern may be formed to have a uniform diameter.
- the organic wire or organic-inorganic hybrid wire mask pattern can be formed to have a diameter in the range of about 10 nm to about 100 ⁇ m.
- the organic wire or organic-inorganic hybrid wire mask pattern may be formed by selecting from a random orientated pattern and an aligned pattern.
- the alignment pattern of the organic wire or the organic-inorganic hybrid wire has an angle error range of 0 ° to 10 ° between two parallel wires. It also has a straightness in the range of 0% to 10% with respect to the printing direction of each wire.
- the alignment pattern of the organic wire or the organic-inorganic hybrid wire may be formed at uniform intervals.
- the alignment pattern of the organic wire or the organic-inorganic hybrid wire may be formed to have an interval in the range of about 10 nm to about 100 cm.
- patterns that do not satisfy the above conditions are called random patterns.
- the random pattern can be a combination of various forms, such as round, elliptical, curved, straight and curved.
- the organic wire or organic-inorganic hybrid wire mask pattern is formed to have a circular or oval cross section. If the cross section of the organic wire or organic-inorganic hybrid wire mask pattern is not circular or elliptical, when the material layer is formed on the mask pattern, the material layer on the mask pattern and the material layer on the portion where the mask pattern is not formed are connected. do. In this case, when the mask pattern is removed, some material layers around the mask pattern of the material layer of the portion where the mask pattern is not formed are removed together with the material layer on the mask pattern, so that an accurate fine pattern may not be formed. In addition, when the cross section of the mask pattern is not circular or elliptical, since the contact area between the mask pattern and the substrate is widened, the mask pattern may not be removed properly. Therefore, organic wire or organic-inorganic hybrid wire mask pattern having a circular or elliptical cross section is preferable.
- the organic wire or organic-inorganic hybrid wire mask pattern having a circular or elliptical cross section may be used for electric field assisted robotic nozzle printing, direct tip drawing (J. Shi, M. Guo, B. Li, Appl. Phys Lett, 93, 121101 (2008)), Meniscus-guided Direct Writing (JT Kim, SK Seol, J. Pyo, JS Lee, JH Je, G. Margaritondo, Adv. 23, 1968-1970 (2011)), melt spinning (see S. Kase, T. Matsuo, J. Polymer Sci.Part A, 3, 2541-2554 (1965)), wet spinning (Wet spinning) (see GC East, Y. Qin, J. Appl. Polymer Sci.
- the material layer may be formed of, for example, a metal, a semiconductor inorganic material, a conductive inorganic material, an insulating inorganic material, an organic polymer semiconductor, an organic low molecular semiconductor, an organic conductive polymer, an organic insulating polymer, or a blend thereof.
- the organic wire or the organic / inorganic hybrid wire mask pattern is removed from the substrate on which the material layer is formed.
- the portions on the organic wires or organic-inorganic hybrid wires of the material layer are then also lifted off to form a pattern having a fine spacing corresponding to the diameter of the organic wires or organic-inorganic hybrid wires.
- FIGS. 2A and 2B illustrate an electric field assisted robotic nozzle printer 100 used to form an organic wire or organic / inorganic hybrid wire mask by electric field assisted robotic nozzle printing, respectively, in forming a fine pattern according to one embodiment of the present invention. Schematic perspective and side views.
- the electric field assisted robotic nozzle printer 100 includes a solution storage device 10, a discharge controller 20, a nozzle 30, a voltage applying device 40, and a collector ( 50), the robot stage 60, stone plate 61 and the micro distance adjuster 70.
- the solution storage device 10 is a portion containing an organic solution and supplying the organic solution to the nozzle 30 so that the nozzle 30 can discharge the organic solution.
- the solution storage device 10 may be in the form of a syringe.
- the solution storage device 10 may be made of plastic, glass, stainless steel, or the like, but is not limited thereto.
- the storage capacity of the solution storage device 10 may be selected within the range of about 1 ⁇ l to about 5,000 mL, but is not limited thereto.
- the storage capacity of the solution storage device 10 may be selected within the range of about 10 ⁇ l to about 50 mL.
- the solution storage device 10 made of stainless steel, there is a gas injection hole (not shown) for injecting gas into the solution storage device 10 to discharge the organic solution out of the solution storage device using the pressure of the gas.
- a gas injection hole (not shown) for injecting gas into the solution storage device 10 to discharge the organic solution out of the solution storage device using the pressure of the gas.
- an organic wire or organic-inorganic hybrid wire of the core shell structure may be a plurality of solution storage device 10.
- the discharge controller 20 is a portion that applies pressure to the organic solution in the solution storage device 10 to discharge the organic solution in the solution storage device 10 through the nozzle 30 at a constant speed.
- a pump or a gas pressure regulator can be used as the discharge regulator 20.
- the discharge controller 20 may adjust the discharge rate of the organic solution within the range of 1 nL / min to 50 mL / min.
- each of the solution storage device 10 is provided with a separate discharge controller 20 can be operated independently.
- a gas pressure regulator (not shown) may be used as the discharge regulator 20.
- the nozzle 30 receives the organic solution from the solution storage device 10 and discharges the organic solution.
- the discharged organic solution may form a drop at the end of the nozzle 30.
- the diameter of the nozzle 30 may range from about 100 nm to about 1.5 mm, but is not limited thereto.
- the nozzle 30 may include a single nozzle, dual-concentric nozzles, and triple-concentric nozzles.
- two or more kinds of organic solutions can be discharged by using a double nozzle or a triple nozzle.
- two or three solution reservoirs 10 may be connected to double or triple nozzles.
- the voltage applying device 40 is for applying a high voltage to the nozzle 30 and may include a high voltage generating device.
- the voltage applying device 40 may be electrically connected to the nozzle 30 via, for example, the solution storage device 10.
- the voltage applying device 40 may apply a voltage of about 0.1 kV to about 50 kV, but is not limited thereto.
- An electric field exists between the nozzle 30 to which the high voltage is applied by the voltage applying device 40 and the collector 50 grounded, and droplets formed at the end of the nozzle 30 by the electric field are Taylor cone.
- the organic wire or the organic-inorganic hybrid wire is formed continuously at this end.
- the collector 50 is a portion to which organic wires or organic-inorganic hybrid wires formed from the organic solution discharged from the nozzle 30 are aligned and bonded.
- the collector 50 is flat and movable on a horizontal plane by the robot stage 60 below it.
- the collector 50 is relatively grounded with respect to the high voltage applied to the nozzle 30.
- Reference numeral 51 denotes that the collector 50 is grounded.
- the collector 50 may be made of a conductive material, for example a metal, and may have a flatness in the range of 0.5 ⁇ m to 10 ⁇ m (a plan view is complete when the plan view of a completely horizontal plane has a value of zero). Represents the maximum error value of the actual plane from the horizontal plane, for example, the plan view of one plane is the distance between the lowest and highest points of that plane).
- the robot stage 60 is a means for moving the collector 50.
- the robot stage 60 is driven by a servo motor to move at a precise speed.
- the robot stage 60 may be controlled to move in two directions, for example on the horizontal plane, on the x and y axes.
- the robot stage 60 may include, for example, an x-axis robot stage 60a moving in the x-axis direction and a y-axis robot stage 60b moving in the y-axis direction.
- the robot stage 60 may move the distance at intervals within the range of 10 nm or more and 100 cm, but is not limited thereto.
- the distance of the robot stage 60 is in the range of 10 ⁇ m or more and 20 cm or less.
- the moving speed of the robot stage 60 can be adjusted in the range of 1 mm / min to 60,000 mm / min, but is not limited thereto.
- the robot stage 60 may be installed on a base plate 61, and the stone stage 61 may have a plan view of 0.1 ⁇ m to 5 ⁇ m.
- the distance between the nozzle 30 and the collector 50 may be constantly adjusted by the plan view of the stone plate 61. That is, since the top view of the stone plate 61 is high, the distance between the collector 50 and the nozzle 30 positioned on the robot stage 60 moving on the stone plate 61 may be constantly adjusted.
- the stone platform 61 can adjust the precision of the organic wire or the organic-inorganic hybrid wire pattern by suppressing the vibration generated by the operation of the robot stage 60.
- the micro distance controller 70 is a means for adjusting the distance between the nozzle 30 and the collector 50.
- the micro distance controller 70 may adjust the distance between the nozzle 30 and the collector 50 by moving the solution storage device 10 and the nozzle 30 vertically.
- the micro distance controller 70 may include a jog 71 and a micrometer 72.
- the jog 71 may be used to roughly adjust the distance in millimeters or centimeters, and the fine adjuster 72 may be used to adjust the fine distance of at least 10 ⁇ m.
- the jog 71 allows the nozzle 30 to approach the collector 50, and then the fine adjuster 72 can precisely adjust the distance between the nozzle 30 and the collector 50.
- the distance between the nozzle 30 and the collector 50 may be adjusted in the range of 10 ⁇ m to 20 mm by the micro distance adjuster 70.
- the collector 50 parallel to the xy plane can be moved on the xy plane by the robot stage 60 and between the nozzle 30 and the collector 50 in the z-axis direction by the micro distance adjuster 70. You can adjust the distance.
- organic wires or organic-inorganic hybrid wires which are produced and elongated from the droplets at the nozzle end, are almost straight in the z direction perpendicular to the collector near the nozzle from which the wires are produced.
- the lateral velocity of the organic wire or the organic-inorganic hybrid wire increases, and the organic wire or the organic-inorganic hybrid wire is bent.
- the electric field assisted robotic nozzle printer 100 used in the embodiments of the present invention can sufficiently narrow the distance between the nozzle 30 and the collector 50 by tens to tens of micrometers so that the collector before the nanowires are disturbed Allow 50 to fall on a straight line. Therefore, a pattern of the organic wire or the organic-inorganic hybrid wire may be formed by the movement of the collector 50.
- Forming the pattern of the organic wire or the organic-inorganic hybrid wire by the movement of the collector reduces the disturbance parameter of the organic wire or the organic-inorganic hybrid wire pattern compared to the movement of the nozzle to form a more precise organic wire or organic-inorganic hybrid wire pattern To do it.
- the electric field assisted robotic nozzle printer 100 may be placed in the housing 80.
- the housing 80 may be formed of a transparent material.
- the housing 80 may be sealed, and gas may be injected into the housing 80 through a gas injection hole (not shown).
- the gas to be injected may be nitrogen, dry air, or the like, and the organic solution, which is easily oxidized by moisture, may be stably maintained by the injection of the gas.
- the housing 80 may be provided with a ventilator 81 and a lamp 82.
- the fan 81 and the lamp 82 may be installed at an appropriate position.
- the ventilator 81 may control the evaporation rate of the solvent in forming the organic wire or the organic-inorganic hybrid wire by adjusting the vapor pressure (generated from the solvent) in the housing 80.
- the speed of the fan 81 may be adjusted to help evaporation of the solvent.
- the rate of evaporation of the solvent can affect the shape and electrical properties of the organic wire or organic-inorganic hybrid wire. If the evaporation rate of the solvent is too fast, the solution may dry out at the nozzle tip before the organic wire or organic-inorganic hybrid wire is formed, and the nozzle may be blocked, and if the solvent evaporation rate is too slow, the solid organic wire or organic-inorganic hybrid The wire is not formed and can be placed in the collector in the liquid state. The organic solution line in the liquid state has poor electrical properties and thus cannot be used for device fabrication. Since the evaporation rate of the solvent affects the formation and characteristics of the organic wire or the organic-inorganic hybrid wire, the fan 81 may play an important role in the formation of the organic wire or the organic-inorganic hybrid wire.
- FIGS. 4A to 4C are perspective views corresponding to FIGS. 3A to 3C.
- 3A and 4A together show the electric field assisted robotic nozzle printer 100 used to form the organic wire or organic-inorganic hybrid wire mask pattern 111.
- the method of forming the organic wire or the organic-inorganic hybrid wire mask pattern 111 is not limited to the method using the electric field assisted robotic nozzle printer.
- the organic wire or organic / inorganic hybrid wire mask pattern 111 is formed on the substrate 101 using the electric field assisted robotic nozzle printer 100 described with reference to FIGS. 1A and 1B.
- the substrate 101 may be formed of a conductive material such as aluminum, copper, nickel, iron, chromium, titanium, zinc, lead, gold, silver, semiconductor materials such as silicon (Si), germanium (Ge), gallium arsenide (GaAs), It may be made of an insulator material such as glass, plastic film, paper or the like, but is not limited thereto.
- the substrate 101 may have a thickness in the range of 50 ⁇ m to 50 mm, but is not limited thereto.
- the organic material is mixed with distilled water or an organic solvent to prepare an organic solution.
- the organic material may be an organic low molecular semiconductor, an organic polymer semiconductor, a conductive polymer, an insulating polymer or a blend thereof, but is not limited thereto.
- the organic low molecular weight semiconductor material is, for example, 6,13-bis (triisopropylsilylethynyl) pentacene (6,13-bis (triisopropylsilylethynyl) pentacene), triethylsilylethynyl anthradithiophene (TES ADT) Or [6,6] -phenyl C61 butyric acid methyl ester (PCBM), but is not limited thereto.
- the organic polymer semiconductor or conductive polymer material may be a polythiophene derivative including P3HT (Poly (3-hexylthiophene)) or PEDOT (Poly (3,4-ethylenedioxythiophene)), PVK (Poly (9-vinylcarbazole)) or a derivative thereof, Poly (p-phenylene vinylene) or derivatives thereof, polyfluorene or derivatives thereof, polyaniline or derivatives thereof, or polypyrrole or derivatives thereof Insulating polymer materials include, but are not limited to, polyethylene oxide (PEO), polystyrene (PS), polycaprolactone (PCL), polyacrylonitrile (PAN), poly (methyl methacrylate) (PMMA), polyimide (Polyimide), and PVDF (PolyDF). (vinylidene fluoride) or polyvinylchloride (PVC), but is not limited thereto.
- P3HT Poly (3-hexylthiophene)
- PEDOT Poly (3,
- organic-inorganic hybrid materials that contain inorganic materials are called organic-inorganic hybrid materials.
- these organic materials include nano-sized particles, wires, ribbons, or rod-shaped semiconductors, metals, metal oxides, precursors of metal or metal oxides, and carbon nanotubes (CNTs).
- Inorganic materials such as quantum dots, which are composed of reduced graphene oxide, graphene, or graphite, and nanoscale semiconductor particles (CdSe, CdTe, CdS, etc.) It may include.
- the organic solvent is a solvent capable of dissolving organic materials, for example, dichloroethylene, trichloroethylene, chloroform, chlorobenzene, dichlorobenzene, styrene, dimethylformamide, dimethyl sulfoxide, xylene, toluene , Cyclohexene, isopropyl alcohol, ethanol, acetone or a mixed solvent thereof may be used, but is not limited thereto.
- the concentration and viscosity of the organic solution may be selected as a concentration and viscosity suitable to be discharged from the nozzle 30 in consideration of the size of the nozzle 30 used in the electric field assisted robotic nozzle printer 100.
- a substance for viscosity control may be added to the organic solution.
- Materials for controlling the viscosity may include, but are not limited to, polyethylene oxide (PEO), poly (9-vinylcarbazole) (PVK), polycaprolactone (PCL) or polystyrene (PS).
- the organic solution in which the organic material is mixed in distilled water or an organic solvent is contained in the solution storage device 10 and then discharged from the nozzle 30 by the discharge controller 20, droplets are formed at the end of the nozzle 30.
- Applying a voltage in the range of 0.1 kV to 50 kV using the voltage applying device 40 to the nozzle 30 prevents the droplets from scattering due to the electrostatic force between the charges formed on the droplets and the grounded collector 50. Without being stretched in the direction of the electric field, it will stick to the substrate 101 on the collector 50.
- the substrate 101 may constitute the collector 50.
- organic wires or organic-inorganic hybrid wires having a length in one direction longer than the other directions may be formed from the droplets.
- the diameter of this organic wire or organic-inorganic hybrid wire can be adjusted in the range of 10 nm to 100 ⁇ m by adjusting the applied voltage and the nozzle size. In the present specification, a wire of less than 1 ⁇ m is called a nanowire, and more is called a microwire.
- the organic wire or organic / inorganic hybrid wire formed from the charged discharge of the nozzle 30 is aligned with the substrate 101 on the collector 50 to form an organic wire or organic / inorganic hybrid wire mask pattern.
- the organic wire or the organic-inorganic hybrid wire may be formed on the substrate on the collector 50 in a separated form instead of being tangled. Can be.
- the distance between the nozzle 30 and the collector 50 may be adjusted using the micro distance controller 70.
- an organic wire or an organic-inorganic hybrid wire mask pattern may be formed on a substrate 101 on the collector 50 in a desired direction and a desired number.
- the organic wire or organic-inorganic hybrid wire by precisely moving the collector 50 in the range of 10 nm to 100 cm by the robot stage 60 driven by the servo motor.
- the width of the pattern having a fine interval and the width of the mask pattern can be adjusted in the range of 10nm to 100cm.
- the organic wire or the organic-inorganic hybrid wire may be formed in various forms as well as a straight line by the movement of the collector 50.
- the material layer 120 to form a pattern having a fine gap is formed on the substrate 101 on which the organic wire or organic / inorganic hybrid wire mask pattern 111 is formed.
- a shadow mask may be used to deposit the material layer 120 in a desired shape.
- the material layer 120 may be formed on the substrate 101 and on the fine wire mask pattern 111.
- the material layer 120 may be formed of various materials according to the use of the pattern having a fine spacing.
- a pattern having a fine interval as the electrode can be formed of a conductive material.
- the material layer may be, for example, gold, platinum, silver, nickel, copper, aluminum, titanium, cobalt, iron, tungsten, ruthenium, rhodium, palladium, molybdenum, cadmium, vanadium, chromium, zinc, indium, yttrium, lithium, It may be formed of a conductive material such as tin, lead or alloys thereof, p-doped or n-doped silicon, zinc oxide, indium oxide, indium tin oxide (ITO) or indium zinc oxide (IZO).
- ITO indium tin oxide
- IZO indium zinc oxide
- the material layer 120 may use an organic polymer semiconductor or an organic low molecular semiconductor, a conductive polymer, an insulating polymer, or a blend thereof.
- the organic polymer semiconductor or conductive polymer material is poly 3-hexylthiophene (P3HT), poly 3-octlythiophene (P3OT), poly butylthiopehene (PBT), polyethylenedioxythiophene (PESOT) / polystyrenesulfonate (PSS), poly (9,9'-dioctylfluorene) poly-thiophene derivatives), polyphenylenevinylene or derivatives thereof, poly (thienylene vinylene) or derivatives thereof, polyacetylene or derivatives thereof, polyaniline ) Or derivatives thereof, polypyrrole or derivatives thereof, or polyfluorene or derivatives thereof, but is not limited thereto.
- the organic low molecular weight semiconductor material may be TIPS pentacene (triisopropylsilylethynyl pentacene), pentacene (pentacene), tetracene (tetracene), anthracene, rubrene or ⁇ -6T (alpha-hexathienylene) It doesn't happen.
- Insulating polymer materials include polyethylene oxide (PEO), polystyrene (PS), polycaprolactone (PCL), polyacrylonitrile (PAN), poly (methyl methacrylate) (PMMA), polyimide, polyvinylidene fluoride (PVDF), or It may include, but is not limited to, polyvinylchloride (PVC).
- the material layer 120 may be formed of an organic, inorganic, or metallic material other than the above material, and may be a semiconductor, conductive, or insulating material.
- the material layer 120 may include, for example, drop casting, spin-coating, E-beam evaporation, atomic layer deposition, and chemical vapor deposition. It may be formed using a method such as deposition, thermal evaporation or sputtering. In addition, the material layer 120 may be formed to a thickness of 1nm to 10 ⁇ m, but is not limited thereto.
- the organic wire or organic / inorganic hybrid wire mask pattern 111 is removed from the substrate 101. Removal of the organic wire or organic-inorganic hybrid wire mask pattern 111 may be performed by a method using an adhesive force of the adhesive tape or a method using decomposition by high frequency sound in an organic solvent, but is not limited thereto. It doesn't happen.
- an organic wire is formed by attaching an adhesive tape to a portion of the organic wire or organic / inorganic hybrid wire mask pattern 111 on which the material layer 120 is not formed and lifting the adhesive tape.
- the organic / inorganic hybrid wire mask pattern 111 may be removed. As the organic wire or organic / inorganic hybrid wire mask pattern 111 is separated from the substrate 101, the material layer 120 deposited on the organic wire or organic / inorganic hybrid wire mask pattern 111 falls together.
- the substrate 101 is placed in an organic solvent for sonication that can selectively dissolve the organic wire or organic-inorganic hybrid wire mask pattern 111, and sonication.
- the organic solvent for sonication may be dichloroethylene, trichloroethylene or chloroform, chlorobenzene, dichlorobenzene, styrene, dimethylformamide, dimethyl sulfoxide, xylene, toluene, cyclohexene, isopropyl alcohol, ethanol , Acetone or a mixed solvent thereof may be used, but is not limited thereto. While the organic wire or organic / inorganic hybrid wire mask pattern 111 is selectively melted by the organic solvent, the material layer 120 formed on the organic wire or organic / inorganic hybrid wire mask pattern 111 is separated.
- the fine pattern 121 having a gap equal to the diameter of the organic wire or organic / inorganic hybrid wire mask pattern 111 is formed. Is formed. Therefore, the fine spacing of the fine pattern 121 can be easily adjusted by the diameter of the organic wire or organic-inorganic hybrid wire mask pattern 111.
- an array of transistors having a micrometer or less size may be manufactured in a large area by forming electrodes having a minute gap in the transistor and forming a microchannel at the minute gap.
- the electrode by forming the electrode with a conductive polymer such as polythiophene in addition to the metal material, it is possible to manufacture a transistor element of a micrometer or less size having a very low mobility and high mobility.
- 5A through 5D are cross-sectional views illustrating a method of forming a micro-channel transistor having a bottom-gate structure according to an embodiment of the present invention.
- a gate electrode 221 is formed on a substrate 211.
- Substrate 211 is a conductor material selected from the group consisting of aluminum, copper, nickel, iron, chromium, titanium, zinc, lead, gold, silver, stainless steel, etc., silicon (Si), germanium (Ge), and gallium acetate.
- a semiconductor material selected from the group containing nit (GaAs), an insulator material selected from the group containing glass, plastic film, and paper, and the like may be selected, but are not limited thereto.
- a buffer layer (not shown) may be formed on the substrate 211.
- the gate electrode 221 may be formed of, for example, gold, platinum, silver, nickel, copper, aluminum, titanium, cobalt, iron, tungsten, ruthenium, rhodium, palladium, molybdenum, cadmium, vanadium, chromium, zinc, indium, yttrium, Conductive material selected from the group consisting of lithium, tin, lead or alloys thereof, p-doped or n-doped silicon, zinc oxide, indium oxide, indium tin oxide (ITO) and indium zinc oxide (IZO) It is possible to form, but is not limited to this.
- a gate insulating layer 222 is formed on the gate electrode 221.
- the gate insulating film 222 may be formed of, for example, an inorganic insulating film such as a silicon oxide film, an aluminum oxide film, or the like, or an organic insulating film such as an ion-gel polymer electrolyte.
- a source electrode and a drain electrode 231 having fine intervals are formed on the gate insulating layer 222.
- the material of the source electrode and the drain electrode 231 is similar to the material of the gate electrode 221, and may be formed of gold, platinum, silver, nickel, copper, aluminum, titanium, cobalt, iron, tungsten, ruthenium, rhodium, palladium, molybdenum, cadmium, Vanadium, chromium, zinc, indium, yttrium, lithium, tin, lead or alloys thereof, p-doped or n-doped silicon, zinc oxide, indium oxide, indium tin oxide (ITO) and indium zinc oxide (IZO) It may be formed of a conductive material selected from the group containing.
- the source electrode and the drain electrode 231 having fine spacing may be formed using the method of forming a fine pattern as described above with reference to the embodiments of FIGS. 2, 3A to 3C, and 4A to 4C. That is, the source electrode and the drain electrode 231 are formed by forming the material layer on the organic wire or the organic / inorganic hybrid wire mask pattern with the material of the source electrode and the drain electrode 231 and removing the organic wire or the organic / inorganic hybrid wire mask pattern. Can be formed. In addition, field assisted nozzle printing, direct tip drawing, meniscus guided direct writing, melt spinning, wet spinning, dry spinning, gel spinning or electrospinning for organic or organic-inorganic hybrid wire mask pattern formation and source and drain electrode formation. Etc.
- the source electrode and the drain electrode 231 may be formed to a thickness of 1nm to 10 ⁇ m.
- An interval between the source electrode 231 and the drain electrode 231 may have a range of 10 nm to 100 ⁇ m.
- an active layer 241 forming a channel is formed on the source electrode and the drain electrode 231.
- the active layer 241 is an inorganic semiconductor material selected from the group containing silicon, germanium, and ZnO, and a carbon material selected from the group containing carbon nanotubes (CNT), fullerenes, and grepenes.
- CNT carbon nanotubes
- the organic low molecular semiconductor material and the organic polymer semiconductor material may be formed, but are not limited thereto.
- the organic polymer semiconductor material may be poly3-hexylthiophene (P3HT), poly 3-octlythiophene (P3OT), poly butylthiopehene (PBT), polythiophene derivatives, polypyrrole or derivatives thereof or polyacetylene Or a derivative thereof, but is not limited thereto.
- P3HT poly3-hexylthiophene
- P3OT poly 3-octlythiophene
- PBT poly butylthiopehene
- polythiophene derivatives polypyrrole or derivatives thereof or polyacetylene Or a derivative thereof, but is not limited thereto.
- the organic low molecular weight semiconductor material may be TIPS pentacene (triisopropylsilylethynyl pentacene), pentacene (pentacene), or anthracene (anthracene), but is not limited thereto.
- TIPS pentacene triisopropylsilylethynyl pentacene
- pentacene pentacene
- anthracene anthracene
- the active layer 241 is thermally evaporated, e-beam evaporation, spin-coating or dip-coating, drop-casting, In the case of forming by sputtering or the like, a fine thin film channel may be formed between the source electrode and the drain electrode 231 having fine spacing.
- the active layer 241 may be formed by forming an organic wire channel (not shown) between the source electrode and the drain electrode 231 having fine spacing using an electric field assisted robotic nozzle printer. That is, an organic wire channel (not shown) may be formed by depositing the organic semiconductor material in the form of an organic wire on a substrate on the collector which discharges and moves the organic semiconductor material in the electric field assisted robotic nozzle printer.
- 6A through 6D are cross-sectional views illustrating a method of forming a fine channel transistor having a top gate structure according to an embodiment of the present invention.
- the method of forming the top-gate structure of the microchannel transistor of the embodiment of FIGS. 6A to 6D is the embodiment of FIGS. 5A to 5D in that the gate electrode 221 is formed on the source electrode and the drain electrode 231 and the active layer 241.
- the source electrode and the drain electrode 231 are first formed on the substrate 211, the active layer 241 is formed on the source electrode and the drain electrode 231, and then the gate insulating layer 222 is formed, and the gate is formed on the gate insulating layer 222.
- An electrode 221 is formed.
- the method of forming the source electrode and the drain electrode 231 and the active layer 241 is the same as the method of forming the bottom-gate microchannel transistor of the embodiment of FIGS. 5A to 5D. That is, an organic wire or organic / inorganic hybrid wire mask pattern having a circular or oval cross section is formed on the substrate 211, and a material layer for source electrode and drain electrode is formed on the organic wire or organic / inorganic hybrid wire mask pattern. The organic wire or the organic / inorganic hybrid wire mask pattern is lifted off from the substrate 211 to form a source electrode and a drain electrode 231. An active layer 241 is formed on the source electrode and the drain electrode 231.
- a light emitting microchannel transistor may be manufactured.
- the light emitting microchannel transistor can be produced by selecting a light emitting active layer as an active layer.
- the light emitting transistor has a structure similar to that of a general microchannel transistor, and holes and electrons are injected from the source and drain electrodes to emit light from the light emitting active layer. If it does not have a microchannel, since the holes and electrons are not effectively injected, the luminescence property does not appear properly. In order to solve this problem, a separate hole transport layer and an electron transport layer are required, and the structure of the device is complicated.
- the microchannel light emitting transistor may also be manufactured in a bottom-gate structure or a top-gate structure.
- the light emitting active layer may be formed of an inorganic light emitting semiconductor, poly (particle), quantum dot, rod or thin film, for example, selected from the group consisting of GaAs, AlGaAs, GaP, AlGaP, InGaP, GaN, InGaN, ZnSe, CdSe, CdTe and CdS.
- 9-vinylcarbazole (Poly (9-vinylcarbazole)) or derivatives thereof, F8T2 (poly (9,9'-dioctylfluorene-co-bithiophene)) or derivatives thereof, F8BT (poly (9,9-dioctylfluorene-co-) benzothiadiazole)) or derivatives thereof, poly (p- (phenylenevinylene)) or derivatives thereof, poly (p- (phenylene)) (poly (p-phenylene)) or their Derivatives, polyaniline or derivatives thereof, polythiophene or derivatives thereof, polypyrrole or derivatives thereof, polyfluorene or derivatives thereof, and poly (spiro-fluorene) or derivatives thereof
- Organic luminescent polymer semiconductor material selected from the group comprising: tetracene (tetracene), rub Rubrene, BP3T ( ⁇ , ⁇ -Bis (bi
- any fluorescent material, phosphorescent material, or a mixture thereof may be included as the light emitting active layer material, and therefore it is not particularly limited to the specific light emitting material.
- the luminescent active layer may include nano-sized particles, quantum dots, rods of the materials.
- the light emitting active layer may further include an ionic dopant (ionic dopant).
- ionic dopant may form a dipole moment in the light emitting active layer to facilitate the injection and movement of holes and electrons.
- the ionic dopant may be selected from the group including but not limited to TPABF 4 (Tetrapropylammonium tetrafluoroborate), TBABF 4 (Tetrabutylammonium tetrafluoroborate), LiOTf (Lithium trifluoromethanesulfonate), KTf (Potassium trifluoromethanesulfonate) and NaTf (Sodium trifluoromethanesulfonate) no.
- TPABF 4 Tetrapropylammonium tetrafluoroborate
- TBABF 4 Tetrabutylammonium tetrafluoroborate
- LiOTf Lithium trifluoromethanesulfonate
- KTf Potassium trifluoromethanesulfonate
- NaTf sodium trifluoromethanesulfonate
- the luminescent active layer is thermal evaporation, E-beam evaporation, atomic layer deposition, chemical vapor deposition, spin-coating, dip coating. It may be formed by -coating, drop-casting or sputtering.
- the light emitting active layer may be formed in the form of an organic wire using an electric field assisted robotic nozzle printer, thereby forming an organic wire light emitting channel.
- 7A to 7D are cross-sectional views illustrating a method of forming a fine pattern according to another embodiment of the present invention in order of process.
- the pattern forming layer 321 is formed of a material on which a pattern is to be formed on the substrate 311.
- the substrate 311 is not particularly limited and any material that can withstand the deformation in dry or wet etching may be used.
- the substrate 311 may be, for example, doped or undoped silicon, silicon oxide, silicon nitride, SrTiO. 3 , Nb-doped SrTiO 3 , Glass, polymers, metals or combinations thereof may be used, but is not limited thereto.
- the pattern forming layer 321 may be a thin film or a pattern of a metal, a conductor, a semiconductor, or an insulator made of a conventional organic polymer and an organic low molecule, an inorganic material, and an organic / inorganic hybrid material.
- the pattern forming layer 321 may also be formed of any 0-dimensional material (e.g., quantum dot semiconductor, fullerene, graphene quantum dots), one-dimensional, which is the core of nanoscale II-VI semiconductor particles (CdSe, CdTe, CdS, etc.) Materials (eg carbon nanotubes, nanowires, nanoribbons) or two-dimensional materials (eg graphene, MoS 2 , hexagonal BN).
- the pattern forming layer 321 may also be an already formed photoresist pattern. However, the pattern forming layer 321 is not limited to these.
- the organic wire or the organic-inorganic hybrid wire 331 having a circular or elliptical cross section is formed on the pattern forming layer 321.
- the organic wire or organic-inorganic hybrid wire having a circular or elliptical cross section may include electric field assisted robotic nozzle printing, direct tip drawing, meniscus guided direct writing, melt spinning, wet spinning, dry spinning, gel spinning or electrospinning. It can be prepared using, but is not limited thereto.
- the material of the organic wire or the organic-inorganic hybrid wire 331 may be an organic material as described above, that is, an organic low molecular semiconductor, an organic polymer semiconductor, a conductive polymer, an insulating polymer, a blend thereof, or a mixture of these and the inorganic materials described above. Can be used but is not limited to this.
- the organic wire or organic / inorganic hybrid wire 331 may be formed to have a diameter in the range of 10 nm to 100 ⁇ m.
- the pattern forming layer 321 is etched using the organic wire or the organic-inorganic hybrid wire 331 as an etching mask.
- the etching process may use dry etching or wet etching.
- the dry etching process may use, for example, a conventional gas plasma etching process, a reactive ion etching process, or an ion beam milling process, but is not limited thereto.
- the wet etching process may be performed by selecting an appropriate etchant according to the type of the pattern forming layer 321.
- a solution containing hydrofluoric acid such as a buffered oxide etch (BOE) solution
- a mixed solution of hydrofluoric acid and nitric acid may be used for etching silicon.
- Chromium can be etched with ammonia nitrate solution and gold (Au) can be etched with a mixed solution of KI and I 2 .
- Ti can be etched with FeCl 3 solution or Marble's reagent solution (typically 50 mL HCl: 50 mL deionized distilled water: 10 g CuSO 4 solution).
- the etchant may include hydrogen peroxide solution (H 2 O 2 ).
- the final pattern 322 may be formed from the pattern forming layer 321 by removing the organic wire or the organic / inorganic hybrid wire 331.
- the organic wire or the organic-inorganic hybrid wire 331 can be removed and removed by using the adhesive force of the adhesive tape as in the taping method, or the organic wire or the organic-inorganic hybrid wire 331 can be selectively removed. Can be removed by dissolving in
- the method for forming a fine pattern according to the present invention may be applied to both form a pattern having a fine interval and a pattern having a fine diameter.
- the micro-pattern or nano-ribbon from a metal, an inorganic semiconductor, an organic semiconductor or a graphene sheet, or a quantum dot material, or an electronic device or an optoelectronic device using the same may be manufactured by the method for forming a fine pattern according to the present invention. have.
- a pattern made of gold (Au) having a nano-interval was produced.
- a nanowire mask pattern made of a polymer material was formed on a substrate.
- PVK Poly (N-vinylcarbazole)
- the PVK solution was placed in a syringe of an electric field assisted robotic nozzle printer, and the PVK solution was discharged from the nozzle while applying voltage to the nozzle.
- PVK nanowire mask patterns were formed on the substrate on the collector moved by the robot stage.
- the diameter of the nozzle used at this time was 100 ⁇ m, the distance between the nozzle and the collector was 2.5 mm, the applied voltage was 4 kV and the discharge rate of the solution was 500 nL / min.
- the movement distance in the y-axis direction of the robot stage was 50 ⁇ m, and the moving distance in the x-axis direction was 15 cm.
- the y-axis movement speed of the robot stage was 1,000 mm / min, and the x-axis movement speed was 8,000 mm / min.
- a nanowire mask pattern was formed extending in the x-axis direction and having a spacing of about 50 ⁇ m in the y-axis direction and having a diameter of about 450 nm.
- an Au layer was formed on the entire surface of the substrate on which the nanowire mask pattern was formed by a thermal deposition method.
- the gold layer was formed to a thickness of about 100 nm.
- the PVK nanowire mask pattern was removed from the board
- FIG. 8 is an SEM photograph of a gold pattern having nanogaps formed by Example 1.
- FIG. 8 As a result of measuring in the SEM photograph of FIG. 8, the width of the gold pattern with nano-gap was 50 ⁇ m, which is consistent with that of the PVK nanowire mask pattern, and the average spacing between the gold-patterns with nano-gap was also about 460 nm. It closely matched the diameter of the mask pattern.
- an orthogonal pattern of the polymer nanowire mask pattern having a thickness of about 460 nm and an interval of about 50 ⁇ m was formed on the substrate.
- the polymer nano wire mask pattern was formed of a PVK material.
- PVK solution was prepared by first dissolving PVK in styrene as described in Example 1. The PVK solution was placed in a syringe of an electric field assisted robotic nozzle printer and discharged from the nozzle while applying a voltage of 4 kV to the nozzle.
- the robot stage was moved in the x-axis direction to form a nanowire pattern in the x-axis direction, and the robot stage was moved in the y-axis direction to form a nanowire pattern in the y-axis direction to form a nanowire mask orthogonal pattern.
- the diameter of the nozzle used was 100 ⁇ m
- the distance between the nozzle and the collector was 2.5 mm
- the applied voltage was 4 kV
- the discharge rate of the solution was 500 nL / min.
- the moving distance in the y-axis direction of the robot stage was 50 ⁇ m
- the moving distance in the x-axis direction was 15 cm.
- the y-axis movement speed of the robot stage was 1,000 mm / min
- the x-axis movement speed was 8,000 mm / min.
- the movement distance of the robot stage in the X-axis direction was 50 micrometers, and the movement distance of the Y-axis direction was 15 cm.
- the X-axis movement speed of the robot stage was 1,000 mm / min, and the Y-axis movement speed was 8,000 mm / min.
- a gold layer was formed on the entire surface of the substrate on which the polymer nanopattern was formed by a thermal deposition method.
- the gold layer was formed to a thickness of 100 nm.
- the PVK nanowire mask pattern was removed from the board
- FIG. 9 is a scanning electron microscopic micrograph of a square pattern made of gold having nano-gap formed by Example 2.
- FIG. 9 As a result of measuring in the SEM photograph of FIG. 9, the width of the square gold pattern was 50 ⁇ m, which coincided with the spacing of the nanowire mask pattern, and the average spacing between the square gold patterns was also about 460 nm, which almost coincided with the diameter of the nanowire mask pattern. .
- a nanochannel thin film transistor was manufactured by the method of forming a fine pattern according to an embodiment of the present invention.
- a titanium (Ti) gate electrode having a width of 600 ⁇ m and a thickness of 30 nm was formed on the silicon wafer.
- As the source drain electrode a gold electrode having a thickness of 340 nm and a thickness of 70 nm was formed on the gate insulating film.
- a nanowire mask pattern having a diameter of about 350 nm and a gap of about 5.5 mm was first formed on a substrate on which a titanium gate electrode and an aluminum oxide gate insulating film were formed.
- the nano wire mask pattern was formed of a PVK material.
- PVK was first dissolved in styrene to prepare a PVK solution.
- the PVK solution was placed in a syringe of an electric field assisted robotic nozzle printer and discharged from the nozzle while applying voltage to the nozzle.
- the PVK nanowire mask pattern was formed on the substrate of the collector moved by the robot stage.
- a gold layer was formed on the PVK nanowire mask pattern by thermal evaporation.
- the PVK nanowire mask pattern was removed from the substrate by the method using the adhesive force of the adhesive tape. As the PVK nanowire mask pattern fell from the substrate, the gold layer on the PVK nanowire mask pattern was removed together to form a rectangular pattern of gold having nano-gap.
- the diameter of the nozzle used was 100 ⁇ m
- the distance between the nozzle and the collector was 2.5 mm
- the applied voltage was 4 kV
- the discharge rate of the solution was 500 nL / min.
- the movement distance in the y-axis direction of the robot stage was 5.5 mm
- the movement distance in the x-axis direction was 15 cm.
- the y-axis movement speed of the robot stage was 1,000 mm / min
- the x-axis movement speed was 8,000 mm / min.
- a pentacene active layer having a thickness of 50 nm was formed on the gate insulating layer and the gold electrode having the nano-gap through thermal deposition using a shadow mask.
- FIG. 10A and 10B are SEM images of the nanochannel pentacene thin film transistor formed in Example 3.
- FIG. 10A and 10B are SEM images of the nanochannel pentacene thin film transistor formed in Example 3.
- a titanium gate electrode 211 is formed on a silicon substrate, and an aluminum oxide gate insulating layer 213 is formed on the entire surface of the substrate over the gate electrode 211.
- the source and drain gold electrodes 221 having nano gaps are formed on the gate insulating layer 213.
- the SEM photograph of FIG. 10B is an enlarged photograph of the gap between the source and drain gold electrodes 221 in the SEM photograph of FIG. 10A.
- the gap between the source and drain gold electrodes 221 is approximately 340 nm, which is almost consistent with the thickness of the polymer nanowire mask pattern.
- the pentacene active layer on the gold electrode 221 is transparent and cannot be identified.
- FIG. 11 is a graph of drain current versus gate voltage of a nanochannel pentacene thin film transistor formed in Example 3.
- FIG. 11 it can be seen that for a specific drain voltage, increasing the gate voltage (absolute value) increases the drain current and increasing the drain voltage (absolute value) at the specific gate voltage increases the drain current. From the graph of FIG. 11, the mobility of the nano-gap thin film transistor was measured at 0.041 cm 2 / V ⁇ s, and it can be seen that the transistor operates stably.
- the nanochannel organic nanowire transistor was manufactured by the method of forming the micropattern according to the exemplary embodiment of the present invention.
- the active layer was formed by depositing pentacene on the source drain electrode having nano-gap, but the active layer, that is, the channel was formed by forming the organic semiconductor nanowire on the source-drain electrode having the nano-gap. .
- a nano-gap source drain electrode made of gold having a thickness of 340 nm and a thickness of 100 nm was formed in the same manner as in Example 3. It was. At this time, the p-doped silicon wafer and the silicon oxide film were used as the gate electrode and the gate insulating film, respectively.
- P3HT nanowire channels were formed on the nano-gap source drain electrodes.
- P3HT solution was prepared.
- the concentration of P3HT in the P3HT solution was 2.6% by weight based on the total solution and the concentration of PEO was 1.1% by weight.
- the P3HT solution was placed in a syringe of an electric field assisted robotic nozzle printer, and the P3HT solution was discharged from the nozzle while applying a voltage of 1.5 mA to the nozzle.
- P3HT nanowire channels were formed on a silicon wafer on which a gate electrode, a gate insulating film, and a source drain electrode were formed on the collector moved by the robot stage.
- the diameter of the nozzle used was 100 ⁇ m
- the distance between the nozzle and the collector was 5.5 mm
- the applied voltage was 1.5 kV
- the discharge rate of the solution was 200 nL / min.
- the movement distance in the y-axis direction of the robot stage was 5.5 mm
- the movement distance in the x-axis direction was 15 cm.
- the y-axis movement speed of the robot stage was 1,000 mm / min, and the x-axis movement speed was 30,000 mm / min.
- the size of the collector was 20 cm x 20 cm, and the size of the substrate on the collector was 8 cm x 8 cm.
- FIG. 12 is a SEM photograph of the nanochannel organic nanowire transistor formed in Example 4.
- FIG. 12 an organic wire channel can be seen crossing the source and drain electrodes with nanogap spacing.
- the gap between the source and drain electrodes is enlarged by a rectangle, and the distance between the source and drain electrodes corresponding to the channel length is 337.5 nm and corresponds to the channel width.
- the width of the P3HT: PEO nanowire is 309.0 nm.
- FIG. 13 is a graph of drain current versus gate voltage of the nanochannel organic nanowire thin film transistor formed in Example 4.
- the mobility of charge (hole) was 0.0021 cm 2 / V ⁇ s, and the ratio of on / off current was calculated as 5.25 ⁇ 10 2 .
- Cu-foil (9 cm ⁇ 15 cm) was mounted in a tubular furnace and heated to 1000 ° C. with 8 sccm of H 2 at a pressure of 90 mtorr, and then maintained at that temperature for 30 minutes. To produce copper grain on the copper foil. In Thereafter, a temperature of 1000 °C, after supplying the H 2 in the CH 4 and 8sccm of 24sccm for 30 minutes at a pressure of 460mtorr, while supplying H 2 of 8sccm at a pressure of 90mtorr to cool to room temperature on the copper foil Monolayer graphene was formed.
- the polymethyl methacrylate (PMMA) layer was contacted and pressed on the single layer graphene to form a film of a copper foil / single layer graphene / PMMA layer.
- the film of the formed copper foil / single layer graphene / PMMA layer was immersed for 5-6 hours in an aqueous solution of ammonium persulfate (2 wt%), which is a copper etchant, and then washed with deionized water to remove the copper foil.
- a film of layer graphene / PMMA layer was obtained.
- the single layer graphene / PMMA layer is placed on a silicon substrate such that the single layer graphene is in contact with the surface of the 5-inch silicon substrate, and then pressurized on top of the PMMA layer at a temperature of about 100 ° C.
- the pins were transferred onto a silicon substrate.
- Graphene in large-area silicon can be formed according to the Nano Letters , 10, 490-493 (2010) paper published by Younbin Lee and eight co-workers.
- PVK nanowire mask pattern was formed on the single layer graphene on the silicon substrate formed in step (a).
- the PVK nanowire mask pattern was formed in the same manner as described in Example 1.
- Single layer graphene was selectively etched using the PVK nanowire mask pattern as an etch mask through an oxygen plasma etching process (70 mTorr, 100 W, 3 sec).
- the PVK nanowire mask pattern was dissolved in a chlorobenzene solvent and subjected to sonication to selectively remove the PVK nanowire mask pattern from the substrate. As a result, graphene nano ribbons having a width of 10 nm were formed.
- An F8T2 thin film light emitting transistor having nanochannels was manufactured by a method of forming a fine pattern according to an embodiment of the present invention.
- the nano-gap source drain electrode was fabricated using PVK nanowires having a diameter of 300 nm as a nano wire mask pattern.
- PVK was first dissolved in styrene to prepare a PVK solution.
- the PVK solution was placed in a syringe of an electric field assisted robotic nozzle printer and discharged from the nozzle while applying voltage to the nozzle.
- the PVK nanowire mask pattern was formed on the substrate of the collector moved by the robot stage.
- a gold layer was formed on the PVK nanowire mask pattern by thermal evaporation.
- the PVK nanowire mask pattern was removed from the substrate by the method using the adhesive force of the adhesive tape. As the PVK nanowire mask pattern was dropped from the substrate, the gold layer on the PVK nanowire mask pattern was removed together to form a source drain electrode made of gold having nano-gap.
- the diameter of the nozzle used was 100 ⁇ m
- the distance between the nozzle and the collector was 2.5 mm
- the applied voltage was 4.2 kV
- the discharge rate of the solution was 500 nL / min.
- the movement distance in the y-axis direction of the robot stage was 5.5 mm
- the movement distance in the x-axis direction was 15 cm.
- the y-axis movement speed of the robot stage was 1,000 mm / min
- the x-axis movement speed was 8,000 mm / min.
- an F8T2 thin film channel was formed on the nano-gap source drain electrode by spin-coating.
- the F8T2 solution used for spin coating was prepared by dissolving 1% by weight of F8T2 in dichlorobenzene, and adding 10% of FPAT4 with TPABF 4 as an ionic dopant. Spin coating was performed at 500 rpm for 5 seconds and then at 2000 rpm for 90 seconds.
- FIG. 14 is an optical micrograph of the nanochannel F8T2 thin film light emitting transistor formed in Example 6.
- FIG. 14 we can see the F8T2 channel shining between the source and drain with nano spacing.
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Abstract
Description
Claims (39)
- 기판 위에 원형 또는 타원형의 단면을 가지고 있는 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 형성하는 단계;상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴이 형성된 상기 기판의 전면(全面) 위에 물질층을 형성하는 단계; 및상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴이 형성되지 않은 부분의 상기 물질층만 남도록 상기 기판으로부터 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 제거하는 단계; 를 포함하는 미세 패턴 형성 방법.
- 제1 항에 있어서, 상기 원형 또는 타원형의 단면을 가지고 있는 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴은 전기장 보조 로보틱 노즐 프린팅, 다이렉트 팁 드로잉(Direct tip drawing), 메니스커스 가이디드 다이렉트 라이팅(Meniscus-guided Direct Writing), 멜트 스피닝(Melt spinning), 웨트 스피닝(Wet spinning), 드라이 스피닝(Dry spinning), 겔 스피닝(Gel spinning), 또는 전기방사(Electrospinning)를 사용하여 제조되는 것을 특징으로 하는 미세 패턴 형성 방법.
- 제2 항에 있어서, 상기 전기장 보조 로보틱 노즐 프린팅은 토출용 용액을 공급하는 용액 저장 장치, 상기 용액 저장 장치로부터 공급받은 용액을 토출하는 노즐, 상기 노즐에 고전압을 인가하는 전압 인가 장치, 상기 노즐에서 토출되어 형성된 유기 와이어 또는 유무기 하이브리드 와이어가 정렬되는, 편평하고 이동가능한 콜렉터, 상기 콜렉터 밑에 설치되어 상기 콜렉터를 x-y 방향(수평 방향)으로 움직일 수 있는 로봇 스테이지(Robot Stage), z 방향(수직방향)으로 상기 노즐과 상기 콜렉터 사이의 거리를 조절하는 마이크로 거리 조절기, 및 상기 콜렉터의 평면도를 유지하고 상기 로봇 스테이지의 작동 중 발생하는 진동을 억제하도록 상기 로봇 스테이지 밑에 위치한 석정반을 포함하는 전기장 보조 로보틱 노즐 프린터를 사용하는 것을 특징으로 하는 미세 패턴 형성 방법.
- 제3 항에 있어서, 상기 노즐과 상기 콜렉터 사이의 거리는 10㎛ 내지 20㎜ 의 범위에 있는 미세 패턴 형성 방법.
- 제1 항 내지 제 4 항 중 어느 한 항에 있어서, 상기 전기장 보조 로보틱 노즐 프린팅을 통해 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 형성하는 단계는,유기 또는 유무기 하이브리드 재료를 증류수 또는 유기 용매 중에 혼합하여 유기 용액을 준비하는 단계;상기 전기장 보조 로보틱 노즐 프린터의 상기 용액 저장 장치 내에 상기 유기 용액을 담는 단계;상기 전기장 보조 로보틱 노즐 프린터의 상기 전압 인가 장치를 통하여 상기 노즐에 고전압을 인가하면서 상기 노즐로부터 상기 용액 저장 장치 내의 상기 유기 용액을 토출시키는 단계; 및상기 노즐로부터 토출되는 상기 유기 용액으로부터 형성되는 유기 와이어 또는 유무기 하이브리드 와이어를 상기 콜렉터를 이동하면서 상기 콜렉터 위의 상기 기판 위에 정렬시키는 단계; 를 포함하는 미세 패턴 형성 방법.
- 제5 항에 있어서, 상기 유기 재료는 유기 저분자 반도체, 유기 고분자 반도체, 전도성 고분자, 절연성 고분자 또는 이들의 블렌드를 포함하는 미세 패턴 형성 방법.
- 제6 항에 있어서, 상기 유기 재료는 6,13-비스(트리아이소프로필실릴에티닐)펜타센(6,13-bis(triisopropylsilylethynyl) pentacene), 트리에틸실릴에티닐 안트라디타이오펜(triethylsilylethynyl anthradithiophene: TES ADT) 및 [6,6]-페닐 C61 부티르산메틸에스테르([6,6]-phenyl C61 butyric acid methyl ester: PCBM)을 포함하는 군으로부터 선택되는 유기 저분자 반도체 재료, polythiophene,P3HT(Poly(3-hexylthiophene)), PEDOT(Poly(3,4-ethylenedioxythiophene)), PVK(Poly(9-vinylcarbazole)) 또는 이의 유도체, 폴리(p-페닐렌 비닐렌)(poly(p-phenylene vinylene) 또는 이의 유도체, 폴리플루오렌(polyfluorene) 또는 이의 유도체, poly(spiro fluorine) 또는 이의 유도체, 폴리아닐린(polyaniline) 또는 이의 유도체 및 폴리피롤(polypyrrole) 또는 이의 유도체를 포함하는 군으로부터 선택되는 유기 고분자 반도체/전도성 고분자 재료, 또는 PEO(Polyethylene oxide), PS(Polystyrene), PCL(Polycaprolactone), PAN(Polyacrylonitrile), PMMA(Poly(methyl methacrylate)), 폴리이미드(Polyimide), PVDF(Poly(vinylidene fluoride)) 및 PVC(Polyvinylchloride)를 포함하는 군으로부터 선택되는 유기 절연성 고분자를 포함하는 미세 패턴 형성 방법.
- 제5 항에 있어서, 상기 유무기 하이브리드 재료는 나노 크기의 입자, 와이어, 리본(ribbon), 막대(rod) 형태를 갖는 반도체, 금속, 금속 산화물, 금속 또는 금속 산화물의 전구체(precursor), 탄소나노튜브(CNT), 환원된 그래핀 산화물(reduced graphene oxide), 그래핀(graphene), 그래핀 양자점, 그래핀 나노리본, 그래파이트(graphite) 또는 나노크기의 화합물 반도체 입자가 중심(core)을 이루는 양자점을 적어도 하나 이상을 포함하는 미세 패턴 형성 방법.
- 제1 항에 있어서, 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴은 10㎚ 내지 100㎛ 의 직경을 갖는 미세 패턴 형성 방법.
- 제1 항에 있어서, 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴은 무작위 패턴 또는 정렬 패턴을 갖는 미세 패턴 형성 방법.
- 제10 항에 있어서, 상기 유기 와이어 또는 유무기 하이브리드 와이어의 정렬 패턴은 2 개 이상의 평행인 와이어들이 이루는 각도가 0° 내지 10° 의 각도 오차 범위을 갖는 미세 패턴 형성 방법.
- 제10 항에 있어서, 상기 유기 와이어 또는 유무기 하이브리드 와이어의 정렬 패턴은 각 와이어의 직경에 대해 0 % 내지 10 % 의 범위에서 직진도(straightness)를 갖는 미세 패턴 형성 방법.
- 제1 항에 있어서, 상기 물질층은 금속, 반도체 무기물, 전도성 무기물, 절연성 무기물, 유기 고분자 반도체, 유기 저분자 반도체, 유기 전도성 고분자, 유기 절연성 고분자 또는 이들의 블렌드를 포함하는 미세 패턴 형성 방법.
- 제13 항에 있어서, 상기 물질층은 금, 백금, 은, 니켈, 구리, 알루미늄, 타이타늄, 코발트, 철, 텅스텐, 루테늄, 로듐, 팔라듐, 몰리브덴, 카드뮴, 바나듐, 크롬, 아연, 인듐, 이트륨, 리튬, 주석, 납 및 이들의 합금을 포함하는 군으로부터 선택되는 금속 또는 전도성 무기물, p- 또는 n- 도핑된 실리콘, 산화 아연, 산화 인듐, 인듐 주석 산화물(ITO), 또는 인듐 아연 산화물(IZO), 아연 산화물 (ZnO), 실리콘 및 게르마늄을 포함하는 군으로부터 선택되는 반도체 무기물, SiO2및 SiN을 포함하는 군으로부터 선택되는 절연성 무기물, P3HT(poly 3-hexylthiophene), P3OT(poly 3-octlythiophene), PBT(poly butylthiopehene), PEDOT(polyethylenedioxythiophene)/ PSS(polystyrenesulfonate), F8T2(poly(9,9'-dioctylfluorene-co-bithiophene)), 폴리페닐렌비닐렌(polyphenylenevinylene) 또는 이의 유도체, PTV(poly(thienylene vinylene)) 또는 이의 유도체, 폴리아세틸렌(polyacetylene) 또는 이의 유도체, 폴리아닐린(polyaniline) 또는 이의 유도체, 폴리피롤(polypyrrole) 또는 이의 유도체, 및 폴리플로렌(polyfluorene) 또는 이의 유도체를 포함하는 군으로부터 선택되는 유기 고분자 반도체/유기 전도성 고분자, TIPS 펜타센(triisopropylsilylethynyl pentacene), 펜타센(pentacene), 테트라센(tetracene), 안트라센(anthracene), 및 루브렌(rubrene), α-6T(alpha-hexathienylene)을 포함하는 군으로부터 선택되는 유기 저분자 반도체, 또는 PEO(Polyethylene oxide), PS(Polystyrene), PCL(Polycaprolactone), PAN(Polyacrylonitrile), PMMA(Poly(methyl methacrylate)), Polyimide, PVDF(Poly(vinylidene fluoride)) 및 PVC(Polyvinylchloride)을 포함하는 군으로부터 선택되는 유기 절연성 고분자 및 이들의 블렌드를 포함하는 미세 패턴 형성 방법.
- 제1 항에 있어서, 상기 기판으로부터 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 제거하는 단계는 접착성 테이프를 사용하여 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 들어올리는(lift off) 단계를 포함하는 미세 패턴 형성 방법.
- 제1 항에 있어서, 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 제거하는 단계는 상기 물질층이 증착된 상기 기판을 음파 처리용 유기 용매 내에 담그고 상기 음파 처리용 유기 용매를 고주파로 음파 처리(sonication)하는 단계를 포함하는 미세 패턴 형성 방법.
- 제1 항 및 제10 항 내지 제12 항 중 어느 한 항에 있어서, 상기 유기 와이어 또는 유무기 하이브리드 와이어의 정렬 패턴을 이용하여 형성된 상기 미세 패턴은 10㎚ 내지 100㎝의 폭을 갖는 미세 패턴 형성 방법.
- 기판 위에 패턴형성층을 형성하는 단계;상기 기판 위에 원형 또는 타원형의 단면을 가지고 있는 유기 와이어 또는 유무기 하이브리드 와이어 식각 마스크 패턴을 형성하는 단계;상기 유기 와이어 또는 유무기 하이브리드 와이어 식각 마스크 패턴을 식각 마스크로 하여 상기 패턴형성층을 식각하는 단계; 및상기 기판으로부터 상기 유기 와이어 또는 유무기 하이브리드 와이어 식각 마스크 패턴을 선택적으로 제거하는 단계; 를 포함하는 미세 패턴 형성 방법.
- 제18 항에 있어서, 상기 원형 또는 타원형의 단면을 가지고 있는 유기 와이어 또는 유무기 하이브리드 와이어 식각 마스크 패턴은 전기장 보조 로보틱 노즐 프린팅, 다이렉트 팁 드로잉, 메니스커스 가이디드 다이렉트 라이팅, 멜트 스피닝, 웨트 스피닝, 드라이 스피닝, 겔 스피닝, 또는 전기방사를 사용하여 제조되는 것을 특징으로 하는 미세 패턴 형성 방법.
- 제18 항에 있어서, 상기 패턴형성층은 금속, 전도체, 유기 반도체, 무기 반도체, 나노크기의 산화물 반도체 입자가 중심(core)을 이루는 양자점 반도체, 유기 절연체, 무기 절연체 물질 및 풀러렌(fullerene)을 포함하는 군으로부터 선택된 물질로 형성되는 0차원 소재, 반도체 리본, 금속 나노 리본, 탄소나노튜브, 반도체 나노와이어 및 금속 나노와이어을 포함하는 군으로부터 선택되는 1차원 소재, 그래핀, MoS2 및 육방정계(hexagonal) BN을 포함하는 군으로부터 선택되는 물질로 형성되는 2차원 소재, 또는 유기 재료, 고분자 재료, 무기 재료 및 유무기 하이브리드 재료를 포함하는 군으로부터 선택되는 전도체, 반도체 또는 절연체 특성을 지니는 박막 또는 패턴, 또는 포토레지스트 패턴을 포함하는 미세 패턴 형성 방법.
- 제18 항에 있어서, 상기 패턴형성층을 식각하는 단계는 가스 플라즈마 식각 공정, 반응성 이온 식각(reactive ion etching) 공정 또는 이온 빔 밀링(ion beam milling) 공정을 포함하는 건식 식각(dry etching) 공정, 또는 습식 식각(wet etching) 공정을 사용하는 미세 패턴 형성 방법.
- 제18 항 내지 제 21항 중 어느 한 항의 미세 패턴 형성 방법을 통하여 금속, 무기 반도체, 유기 반도체 또는 그래핀 면소재로부터 형성된 마이크로 리본 또는 나노 리본 소재, 또는 양자점 소재.
- 기판 위에 게이트 전극을 형성하는 단계;상기 게이트 전극 위에 게이트 절연막을 형성하는 단계;상기 게이트 절연막 위에 원형 또는 타원형의 단면을 가지고 있는 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 형성하는 단계;상기 게이트 절연막 및 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴 위에 소스 전극 및 드레인 전극용 물질층을 형성하는 단계;상기 기판으로부터 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 리프트 오프하여 소스 전극 및 드레인 전극을 형성하는 단계; 및상기 소스 전극 및 상기 드레인 전극 위에 활성층을 형성하는 단계;를 포함하는 바텀-게이트(bottom-gate) 구조의 미세 채널 트랜지스터의 형성 방법.
- 기판 위에 원형 또는 타원형의 단면을 가지고 있는 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 형성하는 단계;상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴 위에 소스 전극 및 드레인 전극용 물질층을 형성하는 단계;상기 기판으로부터 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 리프트 오프하여 소스 전극 및 드레인 전극을 형성하는 단계;상기 소스 전극 및 상기 드레인 전극 위에 활성층을 형성하는 단계;상기 활성층 위에 게이트 절연막을 형성하는 단계; 및상기 게이트 절연막 위에 게이트 전극을 형성하는 단계; 를 포함하는 탑-게이트(top-gate) 구조의 미세 채널 트랜지스터의 형성 방법.
- 제23 항 또는 제24 항에 있어서, 상기 원형 또는 타원형의 단면을 가지고 있는 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴은 전기장 보조 로보틱 노즐 프린팅, 다이렉트 팁 드로잉, 메니스커스 가이디드 다이렉트 라이팅, 멜트 스피닝, 웨트 스피닝, 드라이 스피닝, 겔 스피닝, 또는 전기방사를 사용하여 제조되는 것을 특징으로 하는 미세 채널 트랜지스터의 형성 방법.
- 제23 항 내지 제25 항의 어느 한 항에 있어서, 상기 전기장 보조 로보틱 노즐 프린팅을 통해 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 형성하는 단계는유기 또는 유무기 하이브리드 재료를 증류수 또는 유기 용매 중에 혼합하여 유기 용액을 준비하는 단계;토출용 용액을 공급하는 용액 저장 장치, 상기 용액 저장 장치로부터 공급받은 용액을 토출하는 노즐, 상기 노즐에 고전압을 인가하는 전압 인가 장치, 상기 노즐에서 토출되어 형성된 유기 와이어 또는 유무기 하이브리드 와이어가 정렬되는, 편평하고 이동가능한 콜렉터, 상기 콜렉터 밑에 설치되어 상기 콜렉터를 x-y 방향(수평 방향)으로 움직일 수 있는 로봇 스테이지(Robot Stage), z 방향(수직방향)으로 상기 노즐과 상기 콜렉터 사이의 거리를 조절하는 마이크로 거리 조절기, 및 상기 콜렉터의 평면도를 유지하고 상기 로봇 스테이지의 작동 중 발생하는 진동을 억제하도록 상기 로봇 스테이지 밑에 위치한 석정반을 포함하는 전기장 보조 로보틱 노즐 프린터의 상기 용액 저장 장치 내에 상기 유기 용액을 담는 단계;상기 전기장 보조 로보틱 노즐 프린터의 상기 전압 인가 장치를 통하여 상기 노즐에 고전압을 인가하면서 상기 노즐로부터 상기 용액 저장 장치 내의 상기 유기 용액을 토출시키는 단계; 및상기 노즐로부터 토출되는 상기 유기 용액으로부터 형성되는 유기 와이어 또는 유무기 하이브리드 와이어를 상기 콜렉터를 이동하면서 상기 콜렉터 위의 상기 기판 위에 정렬시키는 단계; 를 포함하는 미세 채널 트랜지스터의 형성 방법.
- 제23 항 또는 제24 항에 있어서, 상기 소스 전극 및 상기 드레인 전극 사이의 간격이 10㎚ 내지 100㎛의 범위를 갖는 미세 채널 트랜지스터의 형성 방법.
- 제23 항 또는 제24 항에 있어서, 상기 활성층은 실리콘, 게르마늄 및 산화아연(ZnO)을 포함하는 군으로부터 선택되는 무기 반도체 재료, P3HT(poly 3-hexylthiophene), P3OT(poly 3-octlythiophene), PBT(poly butylthiopehene) 및 폴리피롤(polypyrrole) 또는 이의 유도체를 포함하는 군으로부터 선택되는 유기 고분자 반도체 재료, 또는 TIPS 펜타센(triisopropylsilylethynyl pentacene), 펜타센(pentacene), 안트라센(anthracene)를 포함하는 군으로부터 선택되는 유기 저분자 반도체 재료를 포함하는 미세 채널 트랜지스터의 형성 방법.
- 제23 항 또는 제24 항에 있어서, 상기 활성층은 열증착(Thermal evaporation), 전자빔 증착(E-beam evaporation), 원자층 증착(Atomic Layer Depostion), 화학기상 증착 (Chemical Vapor Deposition), 스핀코팅(Spin-coating), 딥코팅(Dip-coating), 드랍캐스팅(Drop-casting) 또는 스퍼터링(Sputtering)에 의하여 형성하는 미세 채널 트랜지스터의 형성 방법.
- 제23 항 또는 제24 항에 있어서, 상기 활성층을 전기장 보조 로보틱 노즐 프린터를 이용하여 유기 와이어 형태로 형성하는 미세 채널 트랜지스터의 형성 방법.
- 제30 항에 있어서, 상기 활성층을 형성하는 단계는 활성층 재료를 증류수 또는 유기 용매 중에 혼합하여 활성층 재료 용액을 준비하는 단계;상기 전기장 보조 로보틱 노즐 프린터의 상기 용액 저장 장치 내에 상기 활성층 재료 용액을 담는 단계;상기 전기장 보조 로보틱 노즐 프린터의 상기 전압 인가 장치를 통하여 상기 노즐에 고전압을 인가하면서 상기 노즐로부터 상기 용액 저장 장치 내의 상기 활성층 재료 용액을 토출시키는 단계; 및상기 노즐로부터 토출되는 상기 활성층 재료 용액으로부터 형성되는 유기 와이어를 상기 콜렉터를 이동하면서 상기 콜렉터 상의 상기 기판 위에 정렬시키는 단계; 를 포함하는 미세 채널 트랜지스터의 형성 방법.
- 기판 위에 게이트 전극을 형성하는 단계;상기 게이트 전극 위에 게이트 절연막을 형성하는 단계;상기 게이트 절연막 위에 원형 또는 타원형의 단면을 가지고 있는 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 형성하는 단계;상기 게이트 절연막 및 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴 위에 소스 전극 및 드레인 전극용 물질층을 형성하는 단계;상기 기판으로부터 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 리프트 오프하여 소스 전극 및 드레인 전극을 형성하는 단계; 및상기 소스 전극 및 상기 드레인 전극 위에 발광성 활성층을 형성하는 단계;를 포함하는 바텀-게이트(bottom-gate) 구조의 미세 채널 발광트랜지스터의 형성 방법.
- 기판 위에 원형 또는 타원형의 단면을 가지고 있는 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 형성하는 단계;상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴 위에 소스 전극 및 드레인 전극용 물질층을 형성하는 단계;상기 기판으로부터 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 리프트 오프하여 소스 전극 및 드레인 전극을 형성하는 단계;상기 소스 전극 및 상기 드레인 전극 위에 발광성 활성층을 형성하는 단계;상기 발광성 활성층 위에 게이트 절연막을 형성하는 단계; 및상기 게이트 절연막 위에 게이트 전극을 형성하는 단계; 를 포함하는 탑-게이트(top-gate) 구조의 미세 채널 발광트랜지스터의 형성 방법.
- 제32 항 또는 제33 항에 있어서, 상기 원형 또는 타원형의 단면을 가지고 있는 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴은 전기장 보조 로보틱 노즐 프린팅, 다이렉트 팁 드로잉, 메니스커스 가이디드 다이렉트 라이팅, 멜트 스피닝, 웨트 스피닝, 드라이 스피닝, 겔 스피닝, 또는 전기방사를 사용하여 제조되는 것을 특징으로 하는 미세 채널 발광트랜지스터의 형성 방법.
- 제32 항 또는 제33 항에 있어서, 상기 발광성 활성층은 GaAs, AlGaAs, GaP, AlGaP, InGaP, GaN, InGaN, ZnSe, CdSe, CdTe 및 CdS 을 포함하는 군으로부터 선택되는 무기 발광성 반도체 입자, 양자점, 막대, 와이어, 박막 재료, 폴리(9-비닐카바졸)(Poly(9-vinylcarbazole)) 또는 이의 유도체, F8T2(poly(9,9'-dioctylfluorene-co-bithiophene)) 또는 이의 유도체, F8BT(poly(9,9-dioctylfluorene-co-benzothiadiazole)) 또는 이의 유도체, 폴리(p-페닐비닐렌)(poly(p-phenylenevinylene)) 또는 이의 유도체, 폴리(p-페닐렌)(poly(p-phenylene)) 또는 이들의 유도체, 폴리아닐린(polyaniline) 또는 이의 유도체, 폴리타이오펜(polythiophene) 또는 이의 유도체, 폴리피롤(polypyrrole) 또는 이들의 유도체, 폴리플로렌(polyfluorene) 또는 이의 유도체 및 폴리(스피로-플루오렌)(poly(spiro-fluorene)) 또는 이의 유도체를 포함하는 군으로부터 선택되는 유기 발광성 고분자 반도체 재료, 테트라센(tetracene), 루브렌(rubrene), BP3T(α,ω-Bis(biphenylyl)terthiophene), α-5T(α-quinquethiophene), α-6T(α-sexithiophene) 및 P13(N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide)을 포함하는 군으로부터 선택되는 유기 발광성 저분자 반도체 재료, 또는 이들의 블렌드를 포함하는 미세 채널 발광트랜지스터의 형성 방법.
- 제32 항 또는 제33 항 에 있어서, 상기 발광성 활성층은 정공과 전자의 주입을 용이하게 하는 이온성 도펀트(ionic dopant)를 더 포함하는 미세 채널 발광트랜지스터의 형성 방법.
- 제36 항에 있어서, 상기 이온성 도펀트(ionic dopant)는 TPABF4(Tetrapropylammonium tetrafluoroborate), TBABF4(Tetrabutylammonium tetrafluoroborate), LiOTf(Lithium trifluoromethanesulfonate), KTf(Potassium trifluoromethanesulfonate) 및 NaTf(Sodium trifluoromethanesulfonate)를 포함하는 군으로부터 선택되는 미세 채널 발광트랜지스터의 형성 방법.
- 제32 항 또는 제33 항에 있어서, 상기 발광성 활성층은 열증착(Thermal evaporation), 전자빔 증착(E-beam evaporation), 원자층 증착(Atomic Layer Depostion), 화학기상 증착 (Chemical Vapor Deposition), 스핀코팅(Spin-coating), 딥코팅(Dip-coating), 드랍캐스팅(Drop-casting) 또는 스퍼터링(Sputtering)에 의하여 형성하는 미세 채널 발광트랜지스터의 형성 방법.
- 제32 항 또는 제33 항에 있어서, 상기 발광성 활성층을 전기장 보조 로보틱 노즐 프린터를 이용하여 유기 와이어 형태로 형성하는 미세 채널 발광트랜지스터의 형성 방법.
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Also Published As
Publication number | Publication date |
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DE112011103397T5 (de) | 2013-07-11 |
CN103261088B (zh) | 2015-01-07 |
WO2012047042A3 (ko) | 2012-06-21 |
KR101407209B1 (ko) | 2014-06-16 |
US20130203198A1 (en) | 2013-08-08 |
US8852979B2 (en) | 2014-10-07 |
CN103261088A (zh) | 2013-08-21 |
KR20120037882A (ko) | 2012-04-20 |
JP2014503982A (ja) | 2014-02-13 |
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