WO2011148629A1 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- WO2011148629A1 WO2011148629A1 PCT/JP2011/002908 JP2011002908W WO2011148629A1 WO 2011148629 A1 WO2011148629 A1 WO 2011148629A1 JP 2011002908 W JP2011002908 W JP 2011002908W WO 2011148629 A1 WO2011148629 A1 WO 2011148629A1
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- tray
- wafer
- unit
- plasma processing
- accommodation hole
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B44—DECORATIVE ARTS
- B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
- B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
- B44C1/22—Removing surface-material, e.g. by engraving, by etching
- B44C1/227—Removing surface-material, e.g. by engraving, by etching by etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Definitions
- the present invention relates to a plasma processing apparatus such as a dry etching apparatus or a CVD apparatus.
- a wafer as a processing target is supported on a support table called a susceptor provided in a chamber.
- a high frequency voltage is applied to the sealed chamber and a plasma generating gas is supplied to generate plasma in the chamber.
- plasma processing such as dry etching.
- a tray that can accommodate a plurality of wafers in order to collectively support a plurality of wafers on a support base, a tray that can accommodate a plurality of wafers is used (for example, Patent Document 1).
- the tray includes a plurality of receiving holes having a slightly larger diameter than the wafer.
- An overhanging portion is provided so as to protrude from the lower edge of the inner peripheral portion of each accommodation hole to the inside of the accommodation hole.
- the overhanging portion supports the outer edge of the lower surface of the wafer from below and accommodates the wafer in the accommodation hole.
- the support base includes a tray mounting portion on which the tray is mounted and a plurality of wafer support portions provided so as to protrude upward from the tray mounting portion.
- each wafer support portion When the tray is placed on the tray placement portion of the support table, each wafer support portion enters the accommodation hole of the tray from below, and lifts and supports each wafer from the overhang portion.
- Each wafer supported by the wafer support portion of the support base is electrostatically attracted by an electrostatic suction device provided in each wafer support portion, and is supplied from a cooling gas supply line provided in the support base.
- Each wafer is cooled by a gas (for example, helium gas).
- the wafers are actually accommodated in the individual accommodation holes. Whether or not is important. In other words, when there is a wafer hole that does not exist (no wafer is accommodated) among the plurality of accommodation holes provided in the tray, the wafer support corresponding to the accommodation hole in which the wafer does not exist is directly exposed to plasma. . If the wafer support is exposed to plasma, not only the wafer support but also the entire plasma processing apparatus may be damaged.
- an object of the present invention is to provide a plasma processing apparatus capable of preventing the wafer support portion of the support base from being directly exposed to the plasma from the accommodation hole of the tray where no wafer exists.
- a stock unit for supplying and recovering a transportable tray containing a wafer in each of a plurality of receiving holes penetrating in the thickness direction and the tray supplied from the stock unit
- a processing unit that performs plasma processing on the wafer that has been processed; a table on which the tray before the plasma processing is placed; an alignment unit that positions the wafer on the table; and the alignment unit
- a plasma processing apparatus comprising a wafer presence / absence detecting unit for detecting whether or not the wafer is present in each accommodation hole of the tray placed on the table.
- the plasma processing apparatus detects that the transport mechanism for transporting the tray and the wafer presence / absence detection unit are not housed in any of the housing holes of the tray placed on the table. Then, the apparatus further includes a conveyance control unit that returns the tray on the table to the processing unit without conveying it to the processing unit by the conveyance mechanism.
- the tray Before the plasma processing in the processing unit, the tray is placed on the alignment unit table for positioning. For the tray on the table, the wafer presence / absence detection unit detects whether or not a wafer exists in each accommodation hole. As a result, when there is an accommodation hole in which a wafer does not exist among the plurality of accommodation holes provided in the tray, the tray can be prevented from being subjected to plasma processing in the processing unit.
- the wafer presence / absence detecting unit is based on an optical sensor for detecting the wafer accommodated in the accommodation hole of the tray on the table, and a signal from the optical sensor. And a determination unit that determines whether or not the wafer is present in the accommodation hole provided in the tray.
- the optical sensor is configured to project the inspection light toward the tray, and if the wafer is accommodated in the accommodation hole of the tray, the inspection light is blocked and not received, A light receiver disposed at a position where the inspection light is received if the wafer is not accommodated in the accommodation hole of the tray.
- the presence or absence of the wafer in the accommodation hole is determined by whether or not the light receiver receives the inspection light from the projector, that is, whether or not the inspection light is blocked by the wafer, The presence / absence of a wafer can be accurately determined.
- the wafer presence / absence detection unit is configured to capture the image of the accommodation hole of the tray on the table from above, and based on the image obtained by the imaging unit, A determination unit for determining whether or not a wafer exists.
- the table may be a rotary table that rotates the tray in a horizontal plane.
- the wafer presence / absence detection unit detects whether or not the wafer is present in each accommodation hole provided in the tray while the tray is rotated by the rotary table.
- the alignment unit includes a centering mechanism that aligns the center of the tray with respect to the rotary table, and a rotational direction positioning unit that positions the tray in the rotational direction while rotating the tray by the rotary table.
- the wafer presence / absence detection unit detects whether or not the wafer is present in each accommodation hole provided in the tray during positioning in the rotation direction by the rotation direction positioning unit.
- the plasma processing apparatus may further include an alarm generation unit that generates an alarm when the wafer presence / absence detection unit detects that the wafer is not accommodated in any of the accommodation holes of the tray.
- a tray storing wafers in each of a plurality of receiving holes penetrating in the thickness direction is transported from a stock unit to an alignment unit and placed on a table, and the alignment unit is placed on the table. It is detected whether or not the wafer is present in each accommodation hole of the tray, and if the wafer is present in all the accommodation holes of the tray on the table, the tray is removed from the alignment unit. Plasma processing is performed by transporting to a processing unit, and if the wafer is not present in any of the accommodation holes of the tray on the table, the plasma processing unit returns the tray from the alignment unit to the stock unit. Provide a method.
- the tray at the stage of positioning the tray in the alignment unit before the plasma processing is performed on the wafer in the processing unit, it is detected whether or not the wafer is present in each accommodation hole provided in the tray.
- the tray can be returned to the stock unit without being transferred to the processing unit, It is possible to prevent the wafer support portion of the processing unit from being directly exposed to the plasma from the accommodation hole and causing not only the wafer support portion but also the entire plasma processing apparatus to fail.
- the perspective view of the plasma processing apparatus in one embodiment of this invention The cross-sectional top view of the plasma processing apparatus in one embodiment of this invention.
- the cross-sectional side view of the plasma processing apparatus in one embodiment of this invention. The perspective view of the tray with which the plasma processing apparatus in one embodiment of this invention is provided.
- the side sectional view of the tray with which the plasma treatment apparatus in one embodiment of the present invention is provided.
- the figure which shows the procedure which mounts a tray in the susceptor in the process chamber with which the plasma processing apparatus in one embodiment of this invention is provided.
- the figure which shows the procedure which mounts a tray in the susceptor in the process chamber with which the plasma processing apparatus in one embodiment of this invention is provided.
- the figure which shows the procedure which mounts a tray in the susceptor in the process chamber with which the plasma processing apparatus in one embodiment of this invention is provided.
- the figure which shows the procedure which mounts a tray in the susceptor in the process chamber with which the plasma processing apparatus in one embodiment of this invention is provided.
- the figure which shows the procedure which mounts a tray in the susceptor in the process chamber with which the plasma processing apparatus in one embodiment of this invention is provided.
- 1 is a side sectional view of a plasma processing apparatus in an embodiment of the present invention.
- the flowchart which shows the operation
- the perspective view of the plasma processing apparatus in one embodiment of this invention. 1 is a side sectional view of a plasma processing apparatus in an embodiment of the present invention. 1 is a side sectional view of a plasma processing apparatus in an embodiment of the present invention. 1 is a side sectional view of a plasma processing apparatus in an embodiment of the present invention.
- a plasma processing apparatus 1 performs plasma processing (for example, dry etching) on an object to be processed, and includes a stock unit 2 and a transfer chamber (transfer unit) 3. , An alignment chamber (alignment unit) 4, a processing chamber (processing unit) 5, and a control device 6 (FIGS. 1 and 3).
- 3 is a cross-sectional view taken along the line AA in FIG. 2
- FIG. 4 is a cross-sectional view taken along the line BB in FIG.
- a transportable tray 7 as shown in FIGS. 5A and 5B is used so that a plurality of wafers W as processing objects can be processed simultaneously.
- the tray 7 is a thin disk-shaped member, and is formed from an electrically insulating material such as a ceramic material.
- the tray 7 is provided with a plurality (seven in this case) of circular accommodation holes 7 a that are provided so as to penetrate in the thickness direction and have a slightly larger diameter than the wafer W.
- a ring-shaped projecting portion 7b projecting inward of the housing hole 7a is provided at the lower edge portion of the inner peripheral portion of each housing hole 7a.
- the overhang portion 7b supports the outer edge of the lower surface of the wafer W accommodated in the accommodation hole 7a.
- the tray 7 in this embodiment accommodates one wafer W in one accommodation hole 7a arranged at the center position of the tray 7. Further, six wafers W can be accommodated in the six accommodation holes 7 a arranged so that the centers are arranged at equal intervals on the virtual circle CL centered on the center position of the tray 7.
- the stock unit 2 of the plasma processing apparatus 1 includes a plurality of trays 7 (wafers W in each of the plurality of receiving holes 7 a provided in each tray 7). And a cassette 21 that can be taken out and stored.
- the cassette 21 can be accessed from the outside through an opening / closing door 22 provided in the stock unit 2.
- the transfer chamber 3 is provided adjacent to the stock unit 2, and a transfer mechanism 30 for transferring the tray 7 is accommodated therein.
- the transport mechanism 30 includes a transport arm 31.
- the transfer arm 31 has two parallel protrusions 31a and has a “U” shape in a plan view, and is attached to a horizontal movement mechanism 33 provided on an upper portion of a rotary shaft 32 that is rotatable about a vertical axis. It has been.
- the horizontal movement mechanism 33 is fixed to the upper end portion of the rotating shaft 32 and extends in a horizontal plane direction, and the base stage 33 a extends in a direction in which the base stage 33 a extends.
- a lower stage 33b provided movably and an upper stage 33c provided movably in the extending direction of the base stage 33a with respect to the lower stage 33b.
- the transfer arm 31 is attached to the upper stage 33c in a state in which the extending direction of the two protrusions 31a coincides with the extending direction of the base stage 33a.
- the transport arm 31 rotates in the horizontal plane by the rotation of the rotary shaft 32, and the upper stage 33c moves in the lower stage 33b in conjunction with the lower stage 33b of the horizontal movement mechanism 33 moving in the horizontal plane with respect to the base stage 33a. Move in the horizontal plane by moving in the horizontal plane.
- the rotation operation (rotation operation of the rotation shaft 32) of the transfer arm 31 in the horizontal plane is performed by the control device 6 performing operation control of the rotation shaft drive motor 32a (FIGS. 3, 4, and 6). Further, the movement operation of the transfer arm 31 in the horizontal plane (the movement operation of the lower stage 33b in the horizontal plane direction relative to the base stage 33a and the movement operation in the horizontal plane direction of the lower stage 33b of the upper stage 33c) is performed by the control device 6. Is performed by controlling the operation of a horizontal movement mechanism drive unit 33 d (FIG. 6) provided in the horizontal movement mechanism 33.
- control device 6 rotates the transfer arm 31 in the horizontal plane and moves the transfer arm 31 in the horizontal plane, thereby transferring the tray 7 in the stock unit 2 to the alignment chamber 4 and the tray 7 in the alignment chamber 4.
- Transport to the processing chamber 5, transport of the tray 7 in the processing chamber 5 to the alignment chamber 4, and transport of the tray 7 in the alignment chamber 4 to the stock unit 2 are performed.
- the alignment chamber 4 is provided adjacent to the transfer chamber 3.
- the alignment chamber 4 includes a rotary table 41, a centering mechanism 42, and a transmission type optical sensor (an optical sensor in which the light receiver directly receives the inspection light projected by the light projector).
- the rotary table 41 is provided so as to be rotatable in a horizontal plane with respect to the bottom plate portion 4 a of the alignment chamber 4, and the tray supplied from the stock unit 2 by the transfer arm 31 in the transfer chamber 3. 7 (wafer W is accommodated in each accommodation hole 7a of this tray 7) is placed.
- the rotary table 41 is rotated by the operation of a rotary table drive motor 46 (FIGS. 4 and 6) provided below the bottom plate portion 4a, whereby the tray 7 on the rotary table 41 rotates in a horizontal plane.
- a rotary table drive motor 46 (FIGS. 4 and 6) provided below the bottom plate portion 4a, whereby the tray 7 on the rotary table 41 rotates in a horizontal plane.
- the centering mechanism 42 is provided on the bottom plate portion 4a of the alignment chamber 4 so as to be close to or separated from each other on the same axis in the horizontal plane.
- a total of four abutting members 42c are provided on each lateral member 42b.
- the approaching or separating operation of the pair of longitudinal members 42a (that is, the approaching or separating operation of the pair of transverse members 42b) is performed by the control device 6 provided with a centering mechanism driving unit provided between the pair of longitudinal members 42a. This is done by performing the operation control of 42d.
- the control device 6 moves the transfer arm 31 in the transfer chamber 3 in the horizontal plane, and places the tray 7 on the rotary table 41 by the transfer arm 31. Thereafter, the control device 6 controls the operation of the centering mechanism drive unit 42d to operate the pair of longitudinal members 42a (and thus the pair of lateral members 42b) close to each other (arrow A shown in FIG. 8). ) A total of four contact members 42c erected on the pair of lateral members 42b are brought into contact with the outer edge of the tray 7 to sandwich the tray 7 (see the contact member 42c shown by a solid line in FIG. 8). As a result, the tray 7 on the turntable 41 moves to a position where the center position ct (FIG. 8) of the tray 7 coincides with the center position CT (FIG. 8) of the turntable 41, and the center position alignment ( Centering) is performed.
- the control device 6 controls the operation of the centering mechanism drive unit 42d to operate the pair of longitudinal members 42a (and thus the pair of lateral members 42b) apart from each other. Let As a result, the four contact members 42 c are separated from the tray 7, and the tray 7 can be rotated by the rotation operation of the rotary table 41.
- the outer edge of the rotary table 41 is set within the inner region of the virtual circle CL of the tray 7. .
- the notch detection sensor 43 is provided on the ceiling 4b (FIGS. 4 and 7) of the alignment chamber 4 and projects the inspection light L1 downward, and is directly below the projector HS1. And a light receiver JS1 provided on the bottom plate portion 4a.
- the ceiling portion 4b of the alignment chamber 4 is made of a transparent member such as an acrylic plate, and the notch detection sensor 43 is provided on the upper surface side of the ceiling portion 4b and is inspected by the projector HS1. L1 passes through the ceiling 4b and is irradiated downward.
- the projector HS1 of the notch detection sensor 43 may be provided on the lower surface side of the ceiling portion 4b (the same applies to the two wafer presence / absence detection sensors 44A and 44B).
- the projector HS1 of the notch detection sensor 43 includes an inspection light L1 projected by the projector HS1 when the tray 7 centered by the centering mechanism 42 is rotated by the rotary table 41. It arrange
- the light receiver JS1 of the notch detection sensor 43 is disposed at a position where the inspection light L1 projected by the projector HS1 can receive the inspection light L1 when passing through the notch 7c in the vertical direction.
- the notch detection sensor 43 is inspected by the light receiver JS1 while projecting the inspection light L1 from the projector HS1 while the rotary table 41 on which the tray 7 is placed is rotated (arrow B shown in FIG. 9). By observing the light receiving state of the light L1, the position of the notch 7c of the tray 7 can be detected.
- the alignment processing unit 6a (FIG. 6) of the control device 6 sets the rotation angle of the tray 7 (the rotation angle around the rotation axis of the rotary table 41) at which the position of the notch 7c is detected by the notch detection sensor 43 to 0 degree (the origin position). ).
- the rotation operation of the rotary table 41 in the detection of the notch 7c is performed when the alignment processing unit 6a of the control device 6 controls the operation of the rotary table drive motor 46.
- the two wafer presence / absence detection sensors 44A and 44B provided in the alignment chamber 4 are provided on the ceiling portion 4b of the alignment chamber 4, respectively, and a projector HS2 that projects the inspection light L2 downward, A light receiver JS2 provided directly on the upper surface (mounting surface of the tray 7) of the rotary table 41 or on the bottom plate portion 4a, which is directly below the projector HS2.
- the projector HS2 of each of the wafer presence / absence detection sensors 44A and 44B is provided at a position where the wafer W accommodated in the accommodation hole 7a provided in the tray 7 centered by the centering mechanism 42 can be irradiated with the inspection light L2.
- the wafer presence / absence determination unit 6b (FIG. 6) of the control device 6 is configured so that the inspection light L2 passes through the accommodation hole 7a of the tray 7 and the light receiver JS2 receives the inspection light L2 (FIG. 9). It is determined that the wafer W does not exist (the wafer W is not accommodated) in the accommodation hole 7a of the tray 7 that is the target of detection of whether or not it exists (detection of the presence or absence of a wafer).
- the wafer presence / absence determination unit 6b becomes an object of wafer presence / absence detection when the inspection light L2 is reflected by the upper surface of the wafer W in the accommodation hole 7a and the light receiver JS2 does not receive the inspection light L2. It is determined that the wafer W is present in the accommodation hole 7a of the tray 7 (the wafer W is accommodated). That is, whether the two wafer presence / absence detection sensors 44A and 44B provided in the plasma processing apparatus 1 in the present embodiment detect the inspection light L2 irradiated toward the wafer W accommodated in the tray 7 supported by the rotary table 41. The presence / absence detection of the wafer is performed on the basis of whether or not.
- the wafer presence / absence detection sensors 44A and 44B and the wafer presence / absence determination unit 6b constitute a wafer presence / absence detection unit in the present invention.
- the tray 7 accommodates one wafer W in one accommodation hole 7 a disposed at the center position thereof, and on the virtual circle CL centered on the center position of the tray 7.
- Six wafers W are accommodated in six accommodation holes 7 a arranged so that the centers are arranged at equal intervals in (peripheral positions).
- there are two wafer presence / absence detection sensors that is, a first wafer presence / absence detection sensor 44A for detecting the presence / absence of a wafer for one accommodation hole 7a arranged at the center position of the turntable 41, and a peripheral position.
- There is a second wafer presence / absence detection sensor 44B that performs wafer presence / absence detection on the six accommodation holes 7a arranged.
- the first wafer presence / absence detection sensor 44A includes a projector HS2 provided almost immediately above the center position of the rotary table 41, and a position immediately below the projector HS2 on the rotary table 41 (therefore, accordingly). And a light receiver JS2 embedded in the center of the rotary table 41). Further, the second wafer presence / absence detection sensor 44B is outside the outer edge of the turntable 41 and inside the virtual circle SS (FIG. 8) inscribed in the six accommodation holes 7a arranged at the peripheral position of the tray 7.
- the tray temporary placement table 45 is configured so that the inspection light L ⁇ b> 2 irradiated by the projector HS ⁇ b> 2 of each wafer presence / absence detection sensor 44 ⁇ / b> A, 44 ⁇ / b> B is not blocked by the tray temporary placement table 45.
- through holes 45a penetrating in the thickness direction are provided.
- the number of second wafer presence / absence detection sensors 44B for detecting the presence / absence of wafers in the six receiving holes 7a in the peripheral position of the tray 7 is one. However, by rotating the tray 7 after the centering by the turntable 41, the presence / absence detection of the wafers in the six receiving holes 7a at the peripheral positions of the tray 7 can be performed by one second wafer presence / absence detection sensor 44B. it can.
- the rotation control of the turntable 41 is performed when the wafer presence / absence determination unit 6b of the control device 6 controls the operation of the turntable drive motor 46.
- the wafer presence / absence detection of the six receiving holes 7a at the peripheral position of the tray 7 by one second wafer presence / absence detection sensor 44B is performed by the rotary table 41 for 7c by the notch detection sensor 43 as described later. Executed when rotating. That is, the wafer presence / absence detection is performed in parallel with the notch detection for positioning the rotational angle position of the tray 7. Therefore, the time required for the processing in the alignment chamber 4 can be shortened, and the tact improvement in the entire plasma processing apparatus 1 can be contributed.
- the second wafer presence / absence detection sensor 44B is disposed outside the outer edge of the rotary table 41 and at the peripheral position of the tray 7. This is a case where the wafer W does not exist in the receiving hole 7a of the tray 7 to be detected by irradiating the inspection light L2 in the region inside the virtual circle SS inscribed in the receiving hole 7a.
- the inspection light L2 is not reflected by the rotary table 41. Therefore, it can be avoided that the wafer presence / absence determination unit 6b of the control device 6 misidentifies the presence of the wafer W in the accommodation hole 7a where the wafer W does not exist.
- the processing chamber 5 is connected to the transfer chamber 3 via the gate valve 8. When the gate valve 8 is closed, the processing chamber 5 functions as a vacuum container independent of the transfer chamber 3.
- the processing chamber 5 includes a susceptor 51 as a support for supporting the wafer W together with the tray 7 therein, and a plasma processing unit 52 (FIG. 6) for performing plasma processing on the wafer W supported by the susceptor 51. ing.
- the susceptor 51 includes a tray mounting portion 51a and a plurality of wafer support portions 51b provided so as to protrude upward from the tray mounting portion 51a.
- the alignment chamber 4 center alignment of the tray 7 with respect to the rotary table 41 (centering) and positioning in the rotation direction are performed in the alignment chamber 4, and the tray 7 (this is transported by the transport arm 31 in the transport chamber 3).
- a wafer W is accommodated in each accommodation hole 7 a of the tray 7.
- each wafer support portion 51b enters into each accommodation hole 7a of the tray 7 from below to support each wafer W by lifting.
- the susceptor 51 is provided with four elevating pins 54 that move up and down in synchronization with the operation of the elevating pin drive mechanism 53 (FIG. 6) controlled by the control device 6.
- Four elevating pin insertion holes 7d (FIGS. 5A and 5B) provided on the lower surface side of the tray 7 can be fitted into the upper end portions of the four elevating pins 54 from above. With the four elevating pin insertion holes 7d of the tray 7 fitted in the four elevating pins 54 (FIGS. 11A and 12A), the four elevating pins 54 are lowered with respect to the susceptor 51 (FIGS. 11B and 12B). Arrow C) shown in the inside.
- the tray 7 is placed on the tray placing portion 51a, and the wafers W accommodated in the accommodation holes 7a of the tray 7 are placed in the tray 7 by the wafer support portions 51b that enter the respective accommodation holes 7a from below. (FIGS. 11C and 12C).
- the operation of the plasma processing unit 52 is controlled by the control device 6.
- the gas supply source 52 a, the vacuum exhaust device 52 b, the first high-frequency voltage application device 52 c, the DC voltage application device 52 d, and the refrigerant circulation The apparatus 52e, the cooling gas supply apparatus 52f, and the 2nd high frequency voltage application apparatus 52g are provided (FIG. 6).
- the gas supply source 52 a supplies a gas for generating plasma into the processing chamber 5.
- the evacuation device 52b evacuates the gas in the processing chamber 5.
- the first high-frequency voltage application device 52 c applies a high-frequency voltage to the dielectric coil 55 (FIG. 3) provided above the processing chamber 5.
- the DC voltage application device 52d applies a DC voltage to the electrostatic chucking electrode 56 (FIG.
- the refrigerant circulation device 52e circulates the refrigerant whose temperature is adjusted in the refrigerant flow path 57 (FIG. 10B) provided in the susceptor 51.
- the cooling gas supply device 52f cools the wafer W into a cooling gas supply pipe 58 (FIGS. 10B, 12A, 12B, and 12C) that is provided in the susceptor 51 and opens to the upper surface of the wafer support 51b.
- a cooling gas (for example, helium gas) is supplied.
- the second high-frequency voltage application device 52 g generates a bias that attracts the plasma generated in the processing chamber 5 to the wafer W side.
- the control device 6 moves the transfer arm 31 so that one of the plurality of trays 7 (wafers W are accommodated in the accommodating holes 7a of the respective trays 7) supplied to the stock unit 2. Is held by the transfer arm 31. Thereafter, the control device 6 operates the transfer arm 31 to move the tray 7 into the alignment chamber 4 (arrow D1 shown in FIG. 13). Further, the control device 6 lowers the transport arm 31 above the rotary table 41 and places the tray 7 on the rotary table 41 (arrow D2 shown in FIG. 13). After placing the tray 7 on the rotary table 41, the control device 6 returns the transfer arm 31 to the transfer chamber 3 (arrow D3 shown in FIG. 13).
- the control device 6 controls the operation of the centering mechanism drive unit 42d to operate the centering mechanism 42. Centering is performed (step ST1 shown in FIG. 14). Then, when the centering of the tray 7 is finished, the notch 7c provided in the tray 7 is detected using the notch detection sensor 43 while operating the rotary table 41 and rotating the tray 7 360 degrees or more in the horizontal plane.
- control device 6 executes wafer presence / absence detection in parallel with the detection of the notch 7c by the notch detection sensor 43. That is, two wafer presence / absence detection sensors (first wafer presence / absence detection sensor 44A and second wafer presence / absence detection sensor 44B) are operated when the tray 7 is rotated by operating the rotary table 41 to detect the notch 7c. ) To detect the presence / absence of wafers in the respective accommodation holes 7a of the tray 7 (step ST2 shown in FIG. 14). For this reason, the time required for processing in the alignment chamber 4 can be shortened, and the tact improvement in the entire plasma processing apparatus 1 can be contributed.
- Wafer presence / absence detection can be executed by the single wafer detection sensor 44B.
- the control device 6 ends the detection of the presence / absence of the wafer for each of the accommodation holes 7a, and stops the rotation of the tray 7 (the rotation of the rotary table 41) when the notch 7c is detected. Know the origin position in the direction of rotation.
- step ST3 the control device 6 determines whether or not the detection of the notch 7c is successful (step ST3 shown in FIG. 14). As a result, if it is determined that the detection of the notch 7c in step ST2 has failed, an error message is displayed on the display unit (alarm generating unit) 61 (FIG. 6) such as a display device provided in the plasma processing apparatus 1. After the display, a waiting state for returning the tray 7 to the stock unit 2 is entered (step ST4 shown in FIG. 14).
- step ST2 the number of rotations of the rotary table 41 in the detection of the notch 7c in step ST2 is set to a predetermined number of times (for example, three times), and the control device 6 moves the notch 7c until the rotation table 41 is rotated a predetermined number of times. If not detected, detection of the notch 7c has failed and the process proceeds from step ST3 to step ST4.
- step ST3 the wafer presence / absence determination unit 6b of the control device 6 determines that the detection of the notch 7c is successful in step ST3
- the wafer presence / absence determination unit 6b determines that all of the plurality of receiving holes 7a included in the tray 7 are based on the result of step ST2. It is determined whether or not the wafer W exists (step ST5 shown in FIG. 14).
- step ST5 when the wafer presence / absence determination unit 6b does not determine that the wafer W is present in all of the plurality of accommodation holes 7a provided in the tray 7, that is, the wafer among the seven accommodation holes 7a provided in the tray 7. If it is determined that there is an accommodation hole 7a in which no W exists (no wafer), an error message (warning) is displayed on the display unit 61 (step ST4 shown in FIG. 14).
- the form of the error message displayed on the display unit 61 may be any character, figure, symbol, lamp lighting, etc., as long as the operator can recognize it. Moreover, you may provide the acoustic output part which outputs an error message (warning) with a sound or an audio
- Step ST4 a waiting state for returning the tray 7 to the stock unit 2 is entered (FIG. 14).
- the waiting state ends when the conditions for returning the tray 7 to the stock unit 2 are satisfied.
- the control device 6 holds the tray 7 on the rotary stage 41 by the transfer arm 31 of the transfer mechanism 30 and returns it from the alignment chamber 4 to the cassette 21 of the stock unit 2.
- step ST5 determines in step ST5 that the wafers W are present in all the receiving holes 7a provided in the tray 7 (there is a wafer)
- the rotary table 41 is rotated, and in step ST2.
- the tray 7 is positioned in the rotational direction based on the detected position of the notch 7c (step ST6 shown in FIG. 14). Further, a standby state for transporting the tray 7 to the processing chamber 5 is entered (step ST7 shown in FIG. 14), and the processing in the alignment chamber 4 is ended.
- the control device 6 When the wafer presence / absence determination unit 6b determines that no wafer W is present in any of the receiving holes 7a (no wafer) and enters the waiting state of step ST4, the control device 6 operates the transfer arm 31 to turn the wafer on the turntable 41. The tray 7 is returned to the stock unit 2.
- the tray 7 before the plasma processing on the wafer W is supported on the rotary table 41 at the stage where the tray 7 is provided in each accommodation hole 7a. Detection of whether or not the wafer W exists (detection of the presence or absence of a wafer) is performed. As a result, when there is an accommodation hole 7 a in which no wafer W exists among the plurality of accommodation holes 7 a, the tray 7 is not transferred to the processing chamber 5.
- the control device 6 When the wafer presence / absence determination unit 6b determines that the wafer W is present in all the accommodation holes 7a and enters the standby state of step ST7, the control device 6 operates the transfer arm 31 to hold the tray 7 on the turntable 41.
- the tray 7 is placed on the susceptor 51 of the processing chamber 5 via the transfer chamber 3. This operation is indicated by an arrow E1 in FIG. 15A and an arrow E2 in FIG. 15B.
- the four lifting pin insertion holes 7 d provided on the lower surface side of the tray 7 are connected to the susceptor 51.
- the upper ends of the four lift pins 54 provided are fitted, and the tray 7 is supported by the four lift pins 54.
- the control device 6 moves the transfer arm 31 away from the processing chamber 5 (arrow E3 shown in FIG. 15C). Then, the gate valve 8 provided in the processing chamber 5 is closed, and the processing chamber 5 is sealed.
- the control device 6 controls the operation of the lifting pin drive mechanism 53 to lower the four lifting pins 54.
- the tray 7 is placed on the tray placement portion 51 a of the susceptor 51, and the wafer W accommodated in each accommodation hole 7 a of the tray 7 is placed (supported) on the wafer support portion 51 b of the susceptor 51. (FIG. 15C).
- the control device 6 When the control device 6 places the tray 7 and the wafer W on the susceptor 51, the control device 6 controls the operation of the gas supply source 52 a to supply a gas for generating plasma into the processing chamber 5.
- the DC voltage application device 52d is operated to apply a DC voltage to the electrostatic chucking electrode 56 in the wafer support 51b. As a result, the wafer W on the wafer support 51 b is electrostatically attracted to the electrostatic attracting electrode 56.
- control device 6 When the control device 6 detects that the pressure of the gas for generating plasma supplied into the processing chamber 5 has been adjusted to a predetermined pressure, the control device 6 controls the operation of the first high-frequency voltage application device 52 c to control the dielectric coil 55. A high frequency voltage is applied to. As a result, plasma is generated in the processing chamber 5.
- the control device 6 After each wafer W is held on the wafer support 51b by electrostatic adsorption, the control device 6 operates the cooling gas supply device 52f to cool the lower surface of each wafer support 51b from the cooling gas supply line 58. Fill with gas. Further, the control device 6 controls the operation of the second high-frequency voltage application device 52g so that the plasma in the processing chamber 5 is attracted to the wafer W on the wafer support 51b. Thereby, the wafer processing (etching) for the wafer W is started.
- the controller 6 stops the application of the bias voltage to the electrostatic attraction electrode 56 by the second high-frequency voltage applying device 52g after the predetermined time has elapsed after the plasma processing on the wafer W is started, and the inside of the processing chamber 5 is stopped. The plasma generation is stopped.
- the control device 6 controls the operation of the cooling gas supply device 52f to stop the supply of the cooling gas. After stopping the supply of the cooling gas, the control device 6 stops the supply of the gas from the gas supply source 52a into the processing chamber 5 at the timing when the pressure of the cooling gas on the lower surface of the wafer W is sufficiently lowered, and the first The application of the high frequency voltage to the dielectric coil 55 by the high frequency voltage applying device 52c is stopped.
- the application of the DC voltage to the electrostatic chucking electrode 56 by the DC voltage applying device 52d is stopped, and the electrostatic chucking of the wafer W is released.
- the static elimination process is executed as necessary to remove the static electricity remaining on the wafer W and the tray 7, and the process in the processing unit is terminated.
- the control device 6 discharges the gas in the processing chamber 5 to the outside of the plasma processing device 1 by the vacuum exhaust device 52b and the refrigerant flow path 57 by the refrigerant circulation device 52e.
- the refrigerant circulation operation is always performed.
- the wafer W is cooled through the susceptor 51 by the circulation operation of the refrigerant into the refrigerant flow path 57 by the refrigerant circulation device 52e, and high plasma processing efficiency is maintained in combination with the cooling of the wafer W through the cooling gas.
- control device 6 operates the transfer arm 31 while the plasma processing is performed on the wafer W in the processing chamber 5, and the tray that stores the wafer W to be subjected to the plasma processing next. 7 is removed from the stock unit 2 and carried into the alignment chamber 4. Further, the control device 6 is placed on the rotary table 41. Thus, while the plasma processing is performed on the wafer W in the processing chamber 5, the center 7 alignment with respect to the rotary table 41 and the positioning in the rotation direction are performed for the tray 7 containing the wafer W to be subjected to the plasma processing next. In addition, the presence / absence detection of the wafer W can be executed.
- the control device 6 When the plasma processing on the wafer W in the processing chamber 5 is completed, the control device 6 operates the lifting pin driving mechanism 53 to raise the four lifting pins 54 and lift and support the tray 7 above the susceptor 51.
- the four elevating pins 54 are inserted from below into elevating pin insertion holes 7d provided on the lower surface side of the tray 7 in the ascending process.
- the control device 6 When the tray 7 is lifted and supported above the susceptor 51 by the raising operation of the elevating pins 54, the control device 6 opens the gate valve 8 and causes the transfer arm 31 to enter the processing chamber 5. In addition, the control device 6 holds the tray 7 lifted and supported by the lifting pins 54 by the transfer arm 31 and moves it away from the processing chamber 5. Then, the tray 5 is placed on the temporary tray placement table 45 in the alignment chamber 4 (FIG. 15D, arrows F1 and F2 shown in the figure). Subsequently, the transfer arm 31 transfers the tray 7 on the rotary table 41 (the tray 7 containing the wafer W to be subjected to plasma processing) that has already been centered with respect to the rotary table 41 (centering) and positioned in the rotational direction.
- the transfer arm 31 transfers the tray 7 on the rotary table 41 (the tray 7 containing the wafer W to be subjected to plasma processing) that has already been centered with respect to the rotary table 41 (centering) and positioned in the rotational direction.
- the control device 6 moves the transfer arm 31 into the alignment chamber 4, and moves the tray 7 ( The tray 7) containing the wafers W that have already been subjected to the plasma processing is held, unloaded from the alignment chamber 4, and returned to the stock unit 2.
- the tray 7 carried out from the processing chamber 5 is once placed on the temporary tray table 45, cooled, and then returned to the stock unit 2. This prevents the wafer W (tray 7), which has become high temperature by the plasma processing, from being returned to the stock unit 2 in a high temperature state. Further, the tray 7 containing the wafer W to be subjected to the plasma processing is taken out from the alignment chamber 4 while the tray 7 containing the wafer W at a high temperature is placed on the tray temporary placement table 45, and the processing chamber is taken out. Carry to 5. As a result, the time required for the entire plasma processing can be shortened and work can be performed efficiently.
- the plasma processing apparatus 1 includes the alignment chamber 4 in which the tray 7 containing the wafer W is positioned in each of the plurality (seven in this case) of the receiving holes 7a, and the tray 7 A processing chamber 5 is provided in which plasma processing is performed on the wafer W accommodated in each of the plurality of accommodation holes 7a. Further, the plasma processing apparatus 1 supports a tray 7 containing wafers W in the alignment chamber 4 and rotates it in a horizontal plane, and centering for aligning the center of the tray 7 with respect to the rotary table 41 in the alignment chamber 4.
- a mechanism 42 and rotation direction positioning means (notch detection sensor 43 and alignment processing unit 6a of the control device 6) for positioning the tray 7 in the rotation direction while rotating the tray 7 by the rotary table 41 in the alignment chamber 4 are provided.
- the plasma processing apparatus 1 has a tray placement portion 51a on which the tray 7 is placed in the processing chamber 5 and a lower side in each accommodation hole 7a of the tray 7 when the tray 7 is placed on the tray placement portion 51a.
- Plasma processing is performed on a susceptor 51 (support base) having a plurality of wafer support portions 51b for entering and lifting and supporting each wafer W and a plurality of wafers W supported by the plurality of wafer support portions 51b provided in the susceptor 51.
- a plasma processing unit 52 (plasma processing means).
- the plasma processing apparatus 1 moves the tray 7 in which the centering mechanism 42 is centered with respect to the rotary table 41 and has been positioned in the rotational direction by the rotational direction positioning means from the rotary table 41 of the alignment chamber 4 to the inside of the processing chamber 5. Detection of whether or not a wafer W is present in each accommodation hole 7a of the tray 7 supported by the rotation table 41 of the alignment chamber 4 and the transfer arm 31 as a transfer means for transferring to the susceptor 51 (detection of wafer presence / absence). Two wafer presence / absence detection sensors 44A and 44B as wafer presence / absence detection units to be performed and a wafer presence / absence determination unit 6b of the control device 6 are provided.
- the positioning stage of the tray 7 in the alignment chamber 4 before performing the plasma processing on the wafer W in the processing chamber 5 centering and positioning stage of the tray 7 in the rotational direction.
- detection of whether or not a wafer W exists in each accommodation hole 7a provided in the tray 7 is performed.
- the tray 7 can be prevented from being placed on the susceptor 51 when there is an accommodation hole 7 a in which the wafer W does not exist among the plurality of accommodation holes 7 a included in the tray 7.
- the wafer presence / absence determination unit 6b is directed to the inspection light L2 irradiated from the wafer presence / absence detection sensors 44A and 44B toward the wafer W accommodated in the tray 7 supported by the rotary table 41. Whether or not the wafer W is present in the accommodation hole 7a is detected based on whether or not is detected. As described above, since the presence / absence of the wafer W in the accommodation hole 7a is determined depending on whether or not the inspection light L2 is blocked by the wafer W, the wafer presence / absence determination unit 6b has a simple configuration. Existence can be accurately determined.
- the wafer presence / absence detection unit detects the presence / absence of a wafer while rotating the tray 7 by the rotary table 41.
- the time required for detecting the presence or absence of the wafer can be shortened, and the processing time in the plasma processing apparatus 1 can be shortened.
- the tray 7 accommodates one wafer W in the one accommodation hole 7a arranged at the center position, and the centers are equally spaced on the virtual circle CL centered at the center position.
- 6 wafers W are accommodated in the six accommodation holes 7a arranged in line with each other, but this is only an example, and the number of wafers W that can be accommodated in the tray 7 and the arrangement of the accommodation holes 7a. Is free.
- the notch detection sensor 43 can detect the notch 7c formed by cutting out a part of the outer edge of the tray 7.
- the wafer presence / absence detecting means 44A and B need only be able to detect whether or not the wafer W is present in each accommodation hole 7a provided in the tray 7. Therefore, these sensors 43, 44A, and B are not necessarily the above-described transmission type optical sensors, but are reflective optical sensors (light projecting unit and reflected light of inspection light projected by the light projecting unit). Other sensors such as an optical sensor having a light receiving unit that integrally receives light may be used.
- the projectors HS1 and HS2 shown in FIG. 7 are replaced with reflective optical sensors, and the light receivers JS1 and JS2 are replaced with mirrors.
- a transmissive optical sensor (wafer presence / absence detection) is used as a wafer presence / absence detection means for detecting whether or not a wafer W exists in each accommodation hole 7a provided in the tray 7 supported by the turntable 41.
- Sensors 44A, B) are used.
- an imaging device such as a CCD camera is used in place of such an optical sensor, and the presence / absence detection of the wafer is performed based on an image obtained by imaging the tray 7 on the rotary table 41 from above by the imaging device. It may be.
- the wafer presence / absence determination unit 6b determines whether or not the wafer W exists in the accommodation hole 7a based on the image captured by the imaging device.
- a mechanism for alignment of the tray 7 including the rotary table 41 is arranged in the independent alignment chamber 4.
- a mechanism for alignment of the tray 7 including the rotary table 41 may be disposed in the transfer chamber 3.
- the present invention can also be applied to this configuration.
- the modified plasma processing apparatus 1 shown in FIG. 16 includes a transfer unit 81 provided adjacent to the stock unit 2.
- a tray 7 containing wafers W before processing is supplied from the transfer unit 81 to the stock unit 2, and these trays 7 are returned from the stock unit 2 to the transfer unit 81 after processing the wafers W.
- a transfer robot 83 is accommodated in a transfer chamber 82 in the transfer unit 81.
- the transfer robot 83 performs an operation of storing the wafer W before plasma processing in the storage hole 7 a of the tray 7, that is, an operation of transferring the wafer W to the tray 7. To do. Further, the transfer robot 83 performs an operation of transferring the dry-etched wafer W from the tray 7 as conceptually indicated by an arrow G2 in FIG. Further, the transfer robot 83 loads the tray 7 storing the wafers W before processing into the stock unit 2 from the transfer unit 81 (arrow H1 in FIG. 16), and the tray 7 storing the processed wafers W. Is carried out from the stock unit 2 to the transfer unit 81 (arrow H2 in FIG. 14).
- a plasma processing apparatus capable of preventing a wafer support portion of a support base from being directly exposed to plasma from a receiving hole of a tray in which no wafer exists.
- Plasma processing apparatus Stock part 3 Transfer chamber (transfer part) 4 Alignment chamber (alignment section) 5 processing chamber (processing section) 6a Alignment processing part (rotation direction positioning part) 6b Wafer presence / absence determination unit 7 tray 7a accommodation hole 30 transport mechanism 31 transport arm 41 Rotary table 42 Centering mechanism 43 Notch detection sensor (rotation direction positioning part) 44A, 44B Wafer presence / absence detection sensor 51 Susceptor (support) 51a Tray mounting part 51b Wafer 52 Plasma processing part 81 Transfer section 82 Transfer chamber 83 Transfer robot W Wafer L Inspection light
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Abstract
Description
4及び図7)に設けられて検査光L1を下方に投光する投光器HS1と、投光器HS1の直下であって底板部4a上に設けられた受光器JS1とを備える。本実施の形態では、アライメント室4の天井部4bはアクリル板等の透明な部材から成っており、ノッチ検出センサ43は天井部4bの上面側に設けられて投光器HS1から投光される検査光L1は天井部4bを透過して下方に照射されるようになっている。しかし、ノッチ検出センサ43の投光器HS1は天井部4bの下面側に設けられていてもよい(2つのウエハ有無検出センサ44A,44Bについても同じ)。
転テーブル41によりトレイ7を回転させながらウエハ有無検出を行う。これにより、ウエハ有無の検出に要する時間を短縮してプラズマ処理装置1における処理作業時間を短縮させることができる。
2 ストック部
3 搬送室(搬送部)
4 アライメント室(アライメント部)
5 処理室(処理部)
6a アライメント処理部(回転方向位置決め部)
6b ウエハ有無判定部
7 トレイ
7a 収容孔
30 搬送機構
31 搬送アーム
41 回転テーブル
42 センタリング機構
43 ノッチ検出センサ(回転方向位置決め部)
44A,44B ウエハ有無検出センサ
51 サセプタ(支持台)
51a トレイ載置部
51b ウエハ
52 プラズマ処理部
81 移載部
82 移載室
83 移載ロボット
W ウエハ
L 検査光
Claims (9)
- 厚み方向に貫通する複数の収容孔それぞれにウエハを収容した搬送可能なトレイを供給及び回収するためのストック部と、
前記ストック部から供給される前記トレイに収容された前記ウエハに対してプラズマ処理を実行する処理部と、
前記プラズマ処理前の前記トレイが載置されるテーブルを備え、このテーブル上の前記ウエハの位置決めが行われるアライメント部と、
前記アライメント部の前記テーブルに載置された前記トレイの各収容孔内に前記ウエハが存在するか否かの検出を行うウエハ有無検出部と
を備えたことを特徴とするプラズマ処理装置。 - 前記トレイを搬送する搬送機構と、
前記ウエハ有無検出部が前記テーブルに載置された前記トレイのいずれかの前記収容孔に前記収容されていないことを検出すると、前記搬送機構により前記テーブル上の前記トレイを前記処理部に搬送することなく前記ストック部に戻す搬送制御部と
をさらに備えることを特徴とする請求項1に記載のプラズマ処理装置。 - 前記ウエハ有無検出部は、
前記テーブル上の前記トレイの前記収容孔に収容された前記ウエハを検出するための光学式センサと、
前記光学式センサからの信号に基づいて、前記トレイが備える前記収容孔に前記ウエハが存在するか否かを判定する判定部とを備えたことを特徴とする、請求項1又は請求項2に記載のプラズマ処理装置。 - 前記光学式センサは、
前記トレイに向けて検査光を投光する投光器と、
前記トレイの前記収容孔に前記ウエハが収容されていれば前記検査光が遮られて受光されないが、前記トレイの前記収容孔に前記ウエハが収容されていなければ前記検査光が受光される位置に配置された受光器と
を備えたことを特徴とする、請求項3に記載のプラズマ処理装置。 - 前記ウエハ有無検出部は、
前記テーブル上の前記トレイの前記収容孔を上方から撮像する撮像部と、
前記撮像部により得られた画像に基づいて、前記トレイの前記収容孔に前記ウエハが存在するか否かを判定する判定部とを備えたことを特徴とする、請求項1又は請求項2に記載のプラズマ処理装置。 - 前記テーブルは前記トレイを水平面内で回転させる回転テーブルであり、
前記ウエハ有無検出部は、前記回転テーブルによる前記トレイの回転中に、前記トレイが備える各収容孔内に前記ウエハが存在するか否かの検出を行うことを特徴とする、請求項1から請求項5のいずれか1項に記載のプラズマ処理装置。 - 前記アラインメント部は、
前記回転テーブルに対するトレイの中心位置合わせを行うセンタリング機構と、
前記回転テーブルによりトレイを回転させながらトレイの回転方向の位置決めを行う回転方向位置決め部と
を備え、
前記ウエハ有無検出部は、前記回転方向位置決め部による回転方向の位置決め中に、前記トレイが備える各収容孔内に前記ウエハが存在するか否かの検出を行うことを特徴とする、請求項6に記載のプラズマ処理装置。 - 前記ウエハ有無検出部が前記トレイのいずれかの前記収容孔に前記ウエハが収容されていないことを検出すると警報を発生する警報発生部をさらに備える、請求項1から請求項7のいずれか1項に記載のプラズマ処理装置。
- 厚み方向に貫通する複数の収容孔それぞれにウエハを収容したトレイを、ストック部からアラインメント部に搬送してテーブルに載置し、
前記アライメント部の前記テーブル上の前記トレイの各収容孔内に前記ウエハが存在するか否かを検出し、
前記テーブル上の前記トレイのすべての前記収容孔内に前記ウエハが存在していれば、前記トレイを前記アラインメント部から処理部に搬送してプラズマ処理を実行し、
前記テーブル上の前記トレイのいずれかの前記収容孔に前記ウエハが存在していなければ、前記トレイを前記アラインメント部から前記ストック部に戻す、プラズマ処理方法。
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