WO2011004711A1 - 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法および光半導体装置 - Google Patents
光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法および光半導体装置 Download PDFInfo
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- WO2011004711A1 WO2011004711A1 PCT/JP2010/060672 JP2010060672W WO2011004711A1 WO 2011004711 A1 WO2011004711 A1 WO 2011004711A1 JP 2010060672 W JP2010060672 W JP 2010060672W WO 2011004711 A1 WO2011004711 A1 WO 2011004711A1
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- Prior art keywords
- silver
- layer
- optical semiconductor
- lead frame
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 120
- 230000003287 optical effect Effects 0.000 title claims abstract description 117
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000004332 silver Substances 0.000 claims abstract description 193
- 229910052709 silver Inorganic materials 0.000 claims abstract description 192
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 190
- 229910001316 Ag alloy Inorganic materials 0.000 claims abstract description 161
- 229910052751 metal Inorganic materials 0.000 claims abstract description 130
- 239000002184 metal Substances 0.000 claims abstract description 130
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 82
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 81
- RYZCLUQMCYZBJQ-UHFFFAOYSA-H lead(2+);dicarbonate;dihydroxide Chemical compound [OH-].[OH-].[Pb+2].[Pb+2].[Pb+2].[O-]C([O-])=O.[O-]C([O-])=O RYZCLUQMCYZBJQ-UHFFFAOYSA-H 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 428
- 238000007747 plating Methods 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 42
- 229910052738 indium Inorganic materials 0.000 claims description 39
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 35
- 229910052718 tin Inorganic materials 0.000 claims description 28
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 26
- 229910052787 antimony Inorganic materials 0.000 claims description 22
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 21
- 239000000956 alloy Substances 0.000 claims description 20
- 229910045601 alloy Inorganic materials 0.000 claims description 19
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000002344 surface layer Substances 0.000 claims description 12
- 229910000838 Al alloy Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910000531 Co alloy Inorganic materials 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 18
- 229920005989 resin Polymers 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- 230000007423 decrease Effects 0.000 description 15
- 239000000243 solution Substances 0.000 description 15
- 230000007797 corrosion Effects 0.000 description 14
- 238000005260 corrosion Methods 0.000 description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 238000007789 sealing Methods 0.000 description 12
- 230000007774 longterm Effects 0.000 description 11
- 238000000576 coating method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000006104 solid solution Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 7
- 238000005486 sulfidation Methods 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000005238 degreasing Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910000846 In alloy Inorganic materials 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000001699 photocatalysis Effects 0.000 description 5
- 238000005554 pickling Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 229910017980 Ag—Sn Inorganic materials 0.000 description 3
- 229910001252 Pd alloy Inorganic materials 0.000 description 3
- 229910001245 Sb alloy Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000010970 precious metal Substances 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 229910021617 Indium monochloride Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910000629 Rh alloy Inorganic materials 0.000 description 2
- 229910001370 Se alloy Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 2
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 2
- IOBIJTFWSZQXPN-UHFFFAOYSA-N [Rh].[Ag] Chemical compound [Rh].[Ag] IOBIJTFWSZQXPN-UHFFFAOYSA-N 0.000 description 2
- JMGVPAUIBBRNCO-UHFFFAOYSA-N [Ru].[Ag] Chemical compound [Ru].[Ag] JMGVPAUIBBRNCO-UHFFFAOYSA-N 0.000 description 2
- 239000002140 antimony alloy Substances 0.000 description 2
- LGFYIAWZICUNLK-UHFFFAOYSA-N antimony silver Chemical compound [Ag].[Sb] LGFYIAWZICUNLK-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 2
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- KRRRBSZQCHDZMP-UHFFFAOYSA-N selanylidenesilver Chemical compound [Ag]=[Se] KRRRBSZQCHDZMP-UHFFFAOYSA-N 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910017827 Cu—Fe Inorganic materials 0.000 description 1
- 229920001353 Dextrin Polymers 0.000 description 1
- 239000004375 Dextrin Substances 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229910001361 White metal Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- FJMNNXLGOUYVHO-UHFFFAOYSA-N aluminum zinc Chemical group [Al].[Zn] FJMNNXLGOUYVHO-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- CCXYPVYRAOXCHB-UHFFFAOYSA-N bismuth silver Chemical compound [Ag].[Bi] CCXYPVYRAOXCHB-UHFFFAOYSA-N 0.000 description 1
- 239000003738 black carbon Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000019425 dextrin Nutrition 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- ZNNZYHKDIALBAK-UHFFFAOYSA-M potassium thiocyanate Chemical compound [K+].[S-]C#N ZNNZYHKDIALBAK-UHFFFAOYSA-M 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 description 1
- -1 silver-white metal oxide Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010969 white metal Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49121—Beam lead frame or beam lead device
Definitions
- the present invention relates to an optical semiconductor device lead frame, a manufacturing method thereof, and an optical semiconductor device.
- Lead frames for optical semiconductor devices are widely used as constituent members of various display / illumination light sources that use optical semiconductor elements (light emitting elements) such as LED (Light Emitting Diode) elements as light sources.
- a lead frame is arranged as a substrate, and after the light emitting element is mounted on the lead frame, in order to prevent deterioration of the light emitting element and its peripheral part due to external factors such as heat, moisture, and oxidation, The light emitting element and its periphery are sealed with resin.
- the reflective material of the lead frame is required to have a high reflectance (for example, a reflectance of 80% or more) in the entire visible light wavelength region (400 to 800 nm).
- a high reflectance for example, a reflectance of 80% or more
- the light reflectance does not decrease. There is an even greater demand. Therefore, in the optical semiconductor device used as the illumination light source, the long-term stabilization of the reflection characteristics and the reflectance of the reflector is an extremely important factor that affects the product performance.
- a layer (film) made of silver or a silver alloy is formed on the lead frame disposed immediately below the LED element for the purpose of improving light reflectance (hereinafter referred to as reflectance).
- reflectance There are many things that have been done.
- a silver plating layer is formed on the reflective surface (Patent Document 1), and after the formation of the silver or silver alloy film, a heat treatment is performed at 200 ° C. or more for 30 seconds or more, and the crystal grain size of the film is 0.5 ⁇ m to 30 ⁇ m.
- Patent Document 2 and the like are known.
- a method of improving the stability of the lead frame by coating with various precious metals other than silver without having a layer made of silver or a silver alloy has been considered.
- a method has been proposed in which a palladium layer is formed on a nickel underlayer by 0.005 to 0.15 ⁇ m and a rhodium layer is formed as a top layer by 0.003 to 0.05 ⁇ m to improve the reflectance (Patent Document). 3).
- the lead frame formed by the technique described in Patent Document 3 has a lower reflectance than a lead frame coated with a film made of silver or a silver alloy, and the entire visible light region (400 to 400) is used as an illumination light source. It is difficult to reach the required reflectance of 80% or higher at 800 nm). In particular, since the rhodium layer has a wavelength region in which the reflectance is reduced by 20% or more than the silver layer, the required characteristics of the reflectance cannot be satisfied in the blue-based and white-based optical semiconductor devices.
- the present invention provides an optical semiconductor device that has good reflection characteristics in the entire visible light region (400 to 800 nm), good adhesion to a sealing resin, and does not cause a decrease in luminance over a long period of time. It is an object to provide a lead frame, a manufacturing method thereof, and an optical semiconductor device using the lead frame.
- the present inventors have a metal oxide layer of a metal other than silver on the surface of a layer made of silver or a silver alloy, and the metal oxide layer is colorless.
- the metal oxide layer is suitably formed to have a thickness of 0.001 to 0.2 ⁇ m as being transparent or silver white, the reflection characteristics are good in the entire visible light region (400 to 800 nm).
- the adhesion with the sealing resin is good, migration is less likely to occur, and furthermore, since silver sulfidation and photocatalytic action do not occur, it is possible to obtain a lead frame for a semiconductor device having excellent reflection characteristics for a long period of time.
- the present invention has been made based on the finding and this finding.
- An optical semiconductor device lead frame in which a layer made of silver or a silver alloy is formed on a conductive substrate, wherein a metal oxide layer of a metal other than silver is formed on the outer layer of the layer made of silver or a silver alloy.
- a lead frame for an optical semiconductor device wherein the metal oxide layer is colorless and transparent or silver-white and has a thickness of 0.001 ⁇ m to 0.2 ⁇ m.
- the metal oxide layer is made of an oxide containing one or more elements selected from the group consisting of tin, indium, and antimony, according to (1) or (2), Lead frame for optical semiconductor devices.
- the layer made of a silver alloy contains one or more elements selected from the group consisting of tin, indium and antimony in a total amount of 20% by mass or less.
- the layer made of the silver alloy is selected from the group consisting of one or more elements selected from the group consisting of tin, indium, and antimony, and a total of 20% by mass or less, and the group consisting of tin, indium, and antimony.
- Lead frame for equipment (6)
- the conductive substrate is made of a metal or an alloy selected from the group consisting of copper, a copper alloy, aluminum or an aluminum alloy, according to any one of (1) to (5), Lead frame for optical semiconductor devices.
- An intermediate layer made of a metal or alloy selected from the group consisting of nickel, nickel alloy, cobalt, cobalt alloy, copper, and copper alloy between the conductive substrate and the layer made of silver or silver alloy
- the lead frame for optical semiconductor devices according to any one of (1) to (6), wherein at least one layer is formed.
- a method of manufacturing the lead frame for an optical semiconductor device Forming a layer made of silver or a silver alloy on a conductive substrate; Forming a metal layer made of a metal other than silver on the outer surface of the layer made of silver or a silver alloy; By performing heat treatment in an atmosphere having an oxygen concentration of 1000 ppm or more at a temperature of 100 ° C. or more and below the melting point of the metal other than silver, a metal oxide layer made of an oxide of a metal other than silver is formed on the surface layer.
- a method for manufacturing a lead frame for an optical semiconductor device Forming a layer made of silver or a silver alloy on a conductive substrate; Forming a metal layer made of a metal other than silver on the outer surface of the layer made of silver or a silver alloy; By performing heat treatment in an atmosphere having an oxygen concentration of 1000 ppm or more at a temperature of 100 ° C. or more and below the melting point of the metal other than silver, a metal oxide layer made of an oxide of a metal other than silver is formed on the
- the metal oxide layer is formed, and a residual metal component which is a metal of the metal layer and is not oxidized is diffused into the layer made of silver or a silver alloy to form the residual metal.
- the silver alloy layer comprising the remaining metal and silver contains one or more elements selected from the group consisting of tin, indium and antimony in a total amount of 20% by mass or less.
- the silver alloy layer comprising the residual metal and silver contains one or more elements selected from the group consisting of tin, indium, and antimony in a total amount of 20% by mass or less, tin, indium Any one of (8) to (10), characterized in that it comprises two layers including a layer containing one or more elements selected from the group of antimony in a total amount of less than 20% by mass
- a silver alloy layer comprising the remaining metal and silver is formed by reflowing silver plating and plating of one or more elements selected from the group consisting of tin, indium and antimony.
- An optical semiconductor device comprising the lead frame for an optical semiconductor device according to any one of (1) to (7) and an optical semiconductor element, wherein at least the lead frame for the optical semiconductor device An optical semiconductor device, wherein the metal oxide layer is provided at a place where an optical semiconductor element is mounted.
- the lead frame of the present invention since a metal oxide layer that is colorless and transparent or silver white is formed as the outermost layer, it is possible to prevent sulfidation or oxidation of the inner layer made of silver or a silver alloy. A decrease can be prevented. Further, since the silver layer is not formed on the outermost surface (that is, silver is exposed), the photocatalytic action does not appear. Therefore, it is possible to form an optical semiconductor device that exhibits corrosion resistance and a non-decomposing effect even with respect to a gas that has passed through the resin after resin sealing, and has good reflection characteristics over the long term.
- the outermost metal oxide layer is colorless and transparent or silver-white, and the thickness is controlled to be 0.001 to 0.2 ⁇ m so that the metal oxide layer is thin. There is almost no decrease in reflectance due to, and a reflection characteristic equivalent to that of conventional silver or a silver alloy can be obtained.
- the method for producing a lead frame of the present invention includes a step of forming a layer made of silver or a silver alloy on a conductive substrate, and a metal layer made of a metal other than silver on the surface of the layer made of silver or a silver alloy. And a metal oxide composed of an oxide of a metal other than silver on the surface layer by performing a heat treatment in an atmosphere having an oxygen concentration of 1000 ppm or higher at a temperature not lower than 100 ° C. and not higher than the melting point of the metal other than silver.
- the metal of the metal layer which is a metal of the metal layer that remains without being oxidized, is diffused into the layer made of silver or a silver alloy to form a solid solution of the residual metal and silver.
- a step of forming a silver alloy layer can be included, and the lattice strain is gradually relaxed to improve the adhesion.
- the metal layer for forming the metal oxide layer is preferably formed by a plating method (including a wet plating method and a dry plating method such as a vapor deposition method), thereby forming a thin and dense oxide film. It can be formed easily.
- the metal oxide layer is provided at least on the portion where the optical semiconductor element is mounted on the lead frame for the optical semiconductor device, the reflectance characteristic can be obtained effectively at low cost. Can do.
- the layer which consists of silver or a silver alloy may be exposed to the surface.
- the metal oxide layer may be partially formed on silver or a layer made of silver, and may be formed by partial plating such as stripe plating or spot plating. Manufacturing a partially formed lead frame can reduce the amount of metal used in unnecessary portions, so that an optical semiconductor device that is environmentally friendly and low in cost can be obtained.
- FIG. 1 is a schematic cross-sectional view of a lead frame for an optical semiconductor device according to the first embodiment of the present invention.
- FIG. 2 is a schematic cross-sectional view of an optical semiconductor device lead frame according to a second embodiment of the present invention.
- FIG. 3 is a schematic cross-sectional view of an optical semiconductor device lead frame according to a third embodiment of the present invention.
- FIG. 4 is a schematic cross-sectional view of an optical semiconductor device lead frame according to a fourth embodiment of the present invention.
- FIG. 5 is a schematic cross-sectional view of an optical semiconductor device lead frame according to a fifth embodiment of the present invention.
- FIG. 6 is a schematic cross-sectional view of an optical semiconductor device lead frame according to a sixth embodiment of the present invention.
- FIG. 7 is a schematic cross-sectional view of an optical semiconductor device lead frame according to a seventh embodiment of the present invention.
- FIG. 1 is a schematic cross-sectional view of a lead frame for an optical semiconductor device according to the first embodiment of the present invention.
- FIG. 1 shows a state in which the optical semiconductor element 4 is mounted on the lead frame (the same applies to the following drawings).
- a layer 2 made of silver or a silver alloy is formed on a conductive substrate 1, and a metal oxide layer 3 made of a metal oxide is formed as the outermost layer.
- the optical semiconductor element 4 is mounted on a part of the surface of the metal oxide layer 3.
- 7 indicates a bonding wire.
- the lead frame of the present invention is an optical semiconductor device that has good reflection characteristics, good adhesion to the sealing resin, and excellent corrosion resistance and long-term reliability that does not cause a decrease in luminance over the long term. Lead frame for use.
- copper, a copper alloy, aluminum, an aluminum alloy, iron, or an iron alloy can be used as the conductive substrate 1, and preferably a metal selected from the group of copper, copper alloy, aluminum, and aluminum alloy or It is an alloy.
- a metal selected from the group of copper, copper alloy, aluminum, and aluminum alloy or It is an alloy By making the conductive substrate 1 copper or copper alloy, aluminum or aluminum alloy, it becomes easy to form the silver or silver alloy layer 2 or the metal oxide layer 3 thereon, and the lead frame can contribute to cost reduction. Can be provided.
- the lead frame having the conductive substrate 1 made of a metal or alloy selected from the group of copper, copper alloy, aluminum, and aluminum alloy has a thermal conductivity that is a characteristic related to good conductivity. Excellent heat dissipation characteristics. This is because heat (heat energy) generated when the optical semiconductor element emits light can be smoothly discharged to the outside through the lead frame. As a result, the lifetime of the light-emitting element and the stabilization of the reflectance characteristics over a long period are expected.
- “good reflection characteristics” means that the reflectance is 80% or more in the entire visible light region having a wavelength of 400 nm or more and 800 nm or less.
- the thickness of the layer 2 made of silver or silver alloy is preferably 0.2 ⁇ m or more and 5.0 ⁇ m or less, and more preferably 0.5 ⁇ m or more and 3.0 ⁇ m or less. This thickness can be realized by adjusting the coating thickness of the layer 2 made of silver or a silver alloy, and can be manufactured at low cost without using a precious metal more than necessary. Here, if the thickness of the layer 2 made of silver or a silver alloy is too thin, the contribution to the reflectance is not sufficient. On the other hand, if the thickness is too large, the effect is saturated and the cost is increased.
- silver alloy used for the layer 2 made of silver or silver alloy examples include silver-tin alloy, silver-indium alloy, silver-rhodium alloy, silver-ruthenium alloy, silver-gold alloy, silver-palladium alloy, silver- Examples include nickel alloy, silver-selenium alloy, silver-antimony alloy, silver-copper alloy, silver-zinc alloy, silver-bismuth alloy, silver-tin alloy, silver-indium alloy, silver-rhodium alloy, silver-ruthenium It is preferably selected from the group consisting of alloys, silver-gold alloys, silver-palladium alloys, silver-nickel alloys, silver-selenium alloys, silver-antimony alloys and silver-copper alloys.
- These alloys are relatively easy to form, and although slightly inferior to pure silver, they can ensure a reflectivity of 80% or more in the visible light range, so they have good reflection characteristics for light in a wide wavelength range. Can be obtained.
- the silver content rate in a silver alloy is 80 mass% or more. This is because if the silver content is too low, the reflectance in the visible light region is lowered.
- the metal oxide layer 3 preferably contains an oxide of at least one element of tin, indium, and antimony.
- the metal oxide layer preferably contains at least one metal or metalloid element selected from the group consisting of tin, indium and antimony in an amount of 20% by mass or less, more preferably 1 to 10% by mass based on the mass of the layer. Inclusive in%.
- the metal oxide layer 3 that is colorless and transparent or silver-white, sulfidation and oxidation of the layer 2 made of silver or a silver alloy can be prevented, so that a decrease in reflectance can be prevented. Further, since the silver layer is not formed on the outermost surface, no photocatalytic action is exhibited. For this reason, it is possible to form an optical semiconductor that exhibits corrosion resistance and non-decomposition effect even with respect to the permeated gas after resin sealing and has good reflection characteristics over the long term.
- these tin, indium and antimony are simply referred to as a metal. In terms of classification, antimony is sometimes referred to as a semi-metal, but this may also be referred to simply as a metal.
- the bond with the sealing resin becomes stronger, and the resin adhesion is remarkably improved as compared with the case where the outermost layer is silver or a silver alloy.
- a layer made of silver or a silver alloy is not exposed, and therefore silver is eluted due to the influence of humidity or the like to cause migration, thereby reducing the possibility of causing a short-circuit accident in the formed circuit.
- the metal oxide layer formed in the outermost layer is colorless and transparent or silver white, and the thickness is controlled to be 0.001 ⁇ m or more and 0.2 ⁇ m or less, so that the reflectance depending on the color tone and thickness is controlled. The reflection characteristics equivalent to those of conventional silver or silver alloy can be obtained.
- the lead frame of the present invention when used for an optical semiconductor element, for example, an LED element, the luminance of the optical semiconductor device is reduced even if the optical semiconductor device emits light (lights) continuously for a long period of 10,000 hours or more. Can be suppressed to about several percent.
- a metal layer made of a metal other than silver for forming an oxide is formed, and then at 100 ° C. or higher. And by performing a heat treatment in an atmosphere having an oxygen concentration of 1000 ppm or more at a temperature below the melting point of the metal, the metal in the metal layer is oxidized to form a metal oxide layer on the surface layer. Is produced by completely or partially diffusing the remaining metal component from the metal layer into the silver or silver alloy layer to form a silver alloy layer made of a solid solution of the remaining metal and silver.
- the metal layer itself disappears and does not remain, so that the metal oxide layer 3 is formed and, if necessary, a silver alloy layer made of the remaining metal and silver is formed together.
- the silver alloy layer composed of the residual metal and silver the buffer layer 5 described below is formed of one layer, or the buffer layer 5 and the residual layer 5A are formed of two layers. There is also.
- the layer 2 made of silver or a silver alloy is preferably formed by a plating method.
- the optical semiconductor element 4 any optical semiconductor element such as an LED element can be used.
- FIG. 2 is a schematic cross-sectional view of a lead frame for an optical semiconductor device according to a second embodiment of the present invention.
- the lead frame of the embodiment shown in FIG. 1 includes a layer 2 made of silver or a silver alloy and a metal oxide layer.
- a layer 5 made of a silver alloy in which a part of the metal component of the metal layer remains in a layer shape and the remaining metal is dissolved in the surface layer portion of the silver or silver alloy layer is formed.
- This layer 5 is a buffer layer (hereinafter referred to as buffer layer 5) of the layer 2 made of silver or silver alloy and the metal oxide layer 3, and is near the interface between the silver or silver alloy layer and the metal oxide layer.
- a solid solution having a concentration gradient such that the metal component decreases toward the silver or silver alloy layer (silver formed from silver and the metal forming the metal layer-silver that is a solid solution of the metal) (Alloy) is formed in a layered manner, and thereby the lattice strain is gradually relaxed and the adhesion is improved.
- symbol which is not mentioned especially represents the same meaning as the above-mentioned code
- FIG. 3 is a schematic cross-sectional view of a lead frame for an optical semiconductor device according to a third embodiment of the present invention.
- the lead frame of the embodiment shown in FIG. 1 has a conductive substrate 1 and a layer 2 made of silver or a silver alloy.
- the intermediate layer 6 is formed between the two.
- the intermediate layer 6 is preferably made of a metal or alloy selected from the group consisting of nickel, nickel alloy, cobalt, cobalt alloy, copper, and copper alloy.
- the conductive layer 1 becomes conductive due to heat generated by the optical semiconductor element. It is possible to prevent deterioration of reflectance characteristics due to diffusion of the material constituting the substrate into a layer made of silver or a silver alloy, and to obtain highly reliable reflectance characteristics over a long period of time.
- FIG. 4 is a schematic cross-sectional view of a lead frame for an optical semiconductor device according to a fourth embodiment of the present invention.
- the metal oxide layer 3, the buffer layer 5, silver or silver are only on the portion where the optical semiconductor element 4 is mounted. A state in which the layer 2 made of an alloy is formed is shown.
- the metal oxide layer 3, the buffer layer 5, and the layer 2 made of silver or a silver alloy can be formed only in the portion that becomes a problem when blackened.
- the intermediate layer 6 is formed on the entire surface of the conductive substrate 1. However, if the intermediate layer 6 is interposed between the conductive substrate 1 and the layer 2 made of silver or silver alloy, the intermediate layer 6 is partially formed. It may be.
- the partial formation means that the intermediate layer 6 is formed on the conductive substrate 1 only under and near the optical semiconductor element 4.
- FIG. 5 is a schematic cross-sectional view of an optical semiconductor device lead frame according to a fifth embodiment of the present invention.
- the buffer layer 5 and the metal oxide layer 3 are provided in the lead frame of the second embodiment having the buffer layer 5.
- a layer 5A (hereinafter referred to as this layer 5A, which is a layer of a silver alloy in which the residual metal is dissolved in silver or a silver alloy and has a silver content higher than that of the buffer layer).
- a residual layer 5A is a layer of a silver alloy in which the residual metal is dissolved in silver or a silver alloy and has a silver content higher than that of the buffer layer.
- the order of each layer when both the remaining layer and the buffer layer are formed is “conductive substrate 1—intermediate layer 6—silver or silver alloy layer 2—buffer layer”.
- the optical semiconductor element 4 is mounted on the metal oxide layer 3. That is, when formed, the remaining layer 5A exists outside the buffer layer 5 (as an upper layer).
- a metal also referred to as a residual metal
- this residual metal diffuses into the silver or silver alloy layer, and this A layer in which the remaining metal is solid-solved in silver of a layer made of silver or a silver alloy may be formed.
- the concentration gradient of the metal other than the silver decreases from the outermost metal oxide layer side to the inner silver or silver alloy layer side. ing.
- the silver alloy layer is formed as only one buffer layer, or is formed as two layers of a buffer layer and a remaining layer.
- the buffer layer and the remaining layer are distinguished by the silver content, a layer of 80% by mass or more of silver is called a buffer layer, and a layer of less than 80% by mass of silver is called a remaining layer.
- the content of metals such as indium and tin gradually decreases with a concentration gradient from the outermost layer side (metal oxide layer 3 side). Therefore, metals such as indium and tin are concentrated (exist at a higher concentration) near the outermost layer, that is, the silver concentration is smaller.
- the remaining layer 5 refers to a region where the metal concentration of indium or tin exceeds 20% by mass, that is, the silver concentration is less than 80% by mass
- the buffer layer refers to a metal such as indium or tin.
- the buffer layer 5 and the silver alloy layer 2 may be the same layer or different layers. The buffer layer 5 and the silver alloy layer 2 are the same layer when the composition of the original silver alloy layer (2) is the same as that of the buffer layer (5).
- a silver alloy layer for example, Ag— In layer
- this silver content is 80% by weight or more, this is a buffer layer.
- the case where the buffer layer 5 and the silver alloy layer 2 are separate layers includes a case where the metal forming the solid solution in the buffer layer 5 and the metal in the silver alloy layer 2 are different metals.
- the case where the buffer layer is equal to the original silver alloy layer, that is, the case where the original silver alloy layer becomes the buffer layer as it is will be described in detail.
- the “silver alloy layer” after heating shown in the table and The “buffer layer” is the same. That is, when the silver alloy layer is disposed by reflowing in the example, enter a numerical value in the column of “silver alloy layer” after heating, and “ ⁇ ” in the buffer layer column means “same on the left”. Filled in.
- indium and the like after reflowing the silver alloy layer, indium and the like are coated very thinly and further subjected to heat treatment at a low temperature, so that intense diffusion does not occur and the coated indium or the like becomes an oxide film as it is. ing.
- the remaining metal (Sn, In, Sb) is made of a silver alloy that forms a solid solution with silver, the remaining metal does not remain as a single layer, and the remaining metal is oxidized. Therefore, it contains no oxygen and no other elements other than the remaining metal and silver.
- FIG. 6 is a schematic sectional view of a lead frame for an optical semiconductor device according to a sixth embodiment of the present invention, in which a concave portion is provided in the conductive substrate 1 and the optical semiconductor element 4 is mounted inside the concave portion.
- the lead frame for an optical semiconductor device of the present invention can be applied to a lead frame shape in which a concavity is provided to improve the light collecting property.
- FIG. 7 is a schematic cross-sectional view of a lead frame for an optical semiconductor device according to a seventh embodiment of the present invention, in which a concave portion is provided in the conductive substrate 1, and the optical semiconductor element 4 is mounted inside the concave portion.
- the metal oxide layer 3 and the buffer layer 5 are formed only in the recesses. Even in the lead frame having the recess, the metal oxide layer 3 and the buffer layer 5 are provided only in the portion that contributes to the reflection of the light emitted from the optical semiconductor element, thereby appropriately improving the corrosion resistance of only the reflection portion. You can also.
- the lead frame of the embodiment shown in FIGS. 1 to 3 and FIGS. 5 to 7 may be partially formed in the same manner as the lead frame of the embodiment shown in FIG. (2)
- the lead frame of the embodiment shown in FIG. 3 may have the buffer layer 5.
- the lead frame of the embodiment shown in FIGS. 4 to 7 may not have the buffer layer 5.
- the remaining layer 5A is interposed between the buffer layer 5 and the metal oxide layer 3. You may have.
- the silver or silver alloy layer 2 may be all the buffer layer 5.
- a silver layer 2 in the lower layer and a metal layer other than silver are separately provided on the upper layer by plating, and these two layers are subjected to heat treatment for oxidation.
- a metal layer other than silver for example, an In layer
- the lead frame of the present invention from a metal layer made of a metal other than silver, Only “metal oxide layer 3” is formed, There are three cases in which “metal oxide layer 3” and “buffer layer 5” are formed, or “metal oxide layer 3”, “buffer layer 5” and “residual layer 5A” are formed. In each of these, the obtained lead frame does not have the silver or silver alloy layer (2), but may be replaced by the buffer layer (5). In addition, each layer including the metal oxide layer 3 may be partially formed as typically shown in FIG.
- the layer 2 and the intermediate layer 6 made of silver or a silver alloy are preferably formed by a plating method.
- the metal layer for forming the metal oxide layer 3 is preferably formed by a plating method (a wet plating method or a dry plating method such as a vapor deposition method).
- the lead frame of each embodiment of the present invention shown in FIGS. 1 to 7 has a metal oxide layer that is colorless and transparent or silver white as the outermost layer, and is formed with a coating thickness of 0.001 to 0.2 ⁇ m. Therefore, sulfidation and oxidation of a layer made of silver or a silver alloy can be prevented, so that a decrease in reflectance can be prevented. Moreover, since silver is not exposed on the outermost surface, no photocatalytic action appears. For this reason, it is possible to form an optical semiconductor that exhibits corrosion resistance and a non-decomposing effect even with respect to a gas that has passed through the resin after sealing the resin, and has good reflection characteristics over the long term.
- the adhesion with the sealing resin is improved as compared with silver or a silver alloy.
- a layer made of silver or a silver alloy is not exposed, and therefore silver is eluted due to the influence of humidity or the like to cause migration, thereby reducing the possibility of causing a short-circuit accident in the formed circuit.
- the metal oxide layer 3 formed in the outermost layer is colorless and transparent or silver white, and the thickness is controlled to be 0.001 to 0.2 ⁇ m, so that the reflectance according to the color tone and thickness is controlled.
- the reflection characteristics equivalent to those of conventional silver or silver alloy can be obtained. Due to these effects, when the lead frame of the present invention is used for an optical semiconductor element, for example, an LED element, even if the optical semiconductor device emits light (lights up) for a long period of 10,000 hours or more, the brightness of the optical semiconductor device is reduced. It can be suppressed to several percent.
- the lead frame of the present invention has good reflectivity characteristics and can easily form a film on the surface thereof by making the conductive substrate 1 copper, copper alloy, aluminum, or aluminum alloy. Furthermore, the lead frame of the present invention has excellent heat dissipation characteristics, and heat (heat energy) generated when the light emitting element emits light can be smoothly discharged to the outside through the lead frame. As a result, the lifetime of the light emitting element is expected to be further stabilized and the reflectance characteristics over a long period of time.
- a metal selected from the group consisting of nickel, nickel alloy, cobalt, cobalt alloy, copper, and copper alloy between the conductive substrate and the layer made of silver or silver alloy, or
- the reflectance characteristics deteriorate due to the diffusion of the material constituting the conductive substrate into the layer made of silver or a silver alloy by heat generated when the light emitting element emits light.
- the reflectance characteristics are more reliable over a long period of time, and the adhesion between the conductive substrate and the layer made of silver or a silver alloy is further improved.
- the thickness of the intermediate layer is determined in consideration of pressability, cost, productivity, heat resistance, and the like.
- the total thickness of the intermediate layer is preferably 0.2 to 2.0 ⁇ m, more preferably 0.5 to 1.0 ⁇ m.
- the intermediate layer may be formed of a plurality of layers, it is usually preferable to have two or less layers in consideration of productivity.
- each layer is formed from the same material as each other if the respective layers are formed from the metal or alloy (interlayer constituent material) and the total layer thickness is within the above range. May be formed from different materials, and their thicknesses may be the same or different.
- the lead frame of the present invention can ensure long-term reliability by setting the thickness of the layer made of silver or silver alloy to 0.2 ⁇ m or more, and the thickness of the layer 2 made of silver or silver alloy can be reduced.
- the thickness of the layer 2 made of silver or silver alloy is saturated at 5.0 ⁇ m.
- the thickness of the layer 2 made of silver or a silver alloy is preferably 0.2 ⁇ m to 5.0 ⁇ m, more preferably 0.5 to 3.0 ⁇ m. Further, since at least one layer of silver or a silver alloy may be formed, a plurality of layers may be used.
- each layer is formed from silver or the silver alloy, and the total layer thickness is within the above range.
- the thickness may be the same as or different from each other.
- the metal oxide layer 3 formed in the outermost layer is preferably made of a metal oxide containing at least one element of tin, indium, and antimony, thereby reducing the reflectance.
- a colorless transparent or silver-white metal oxide layer that is difficult to form can be formed, and corrosion resistance and productivity can be improved.
- the thickness of the outermost layer is 0.001 ⁇ m or more and 0.2 ⁇ m or less, long-term reliability can be ensured without reducing the light reflectance. This is because if the metal oxide layer is too thin, the corrosion resistance becomes insufficient, and if the metal oxide layer is too thick, the reflectance in the visible light region may be greatly reduced. It is.
- the coating thickness of the metal oxide layer is preferably in the range of 0.005 to 0.05 ⁇ m.
- a metal oxide layer of 0.001 ⁇ m or more and 0.2 ⁇ m or less on the surface layer of the lead frame, first, the silver or metal alloy layer disposed on the conductive substrate or the silver or On the intermediate layer disposed on the metal alloy layer, a metal layer is formed within a range of 0.001 to 0.3 ⁇ m, and then the metal of the metal layer is oxidized to obtain a desired metal oxide. Good.
- a metal is coated directly on the silver film and heat treatment is performed, a residual metal component that is excessive to form an oxide film may be formed (not oxidized). In this case, when the sum of the thickness of the metal oxide layer (oxide film) and the thickness of the remaining metal layer exceeds 0.2 ⁇ m, the reflection characteristics may deteriorate.
- the maximum coating thickness is within the range of 1 to 20 times the thickness of the oxide film to be formed. It is important to form the metal layer in a range not exceeding 0.3 ⁇ m.
- the metal layer coating thickness is preferably in the range of 0.001 to 0.3 ⁇ m, more preferably 0.005 to 0.1 ⁇ m.
- a method of manufacturing a lead frame according to an embodiment of the present invention includes a step of forming a layer made of silver or a silver alloy on a conductive substrate, and a metal made of a metal other than silver on the surface of the layer made of silver or a silver alloy. Forming a metal oxide layer on the surface layer by applying heat treatment in an atmosphere having an oxygen concentration of 1000 ppm or more at a temperature of 100 ° C. or higher and a melting point of a metal other than silver, A step of diffusing the residual metal into the layer made of silver or a silver alloy when there is a residual metal content of the metal layer remaining without being subjected to oxidation by heat treatment.
- the oxygen concentration in the atmosphere is preferably 1000 ppm or more in order to form the metal oxide layer, and the heat treatment can be performed in the air.
- the heat treatment temperature is preferably 100 to 300 ° C., more preferably 100 to 200 ° C., and it is preferable to select a temperature at which the substrate does not soften or deteriorate due to the heat treatment.
- the heat treatment time is preferably appropriately set in the range of 1 second to 48 hours, and the thickness of the metal oxide layer can be controlled by appropriately adjusting the oxygen concentration and the heat treatment time.
- the metal component is directed toward the silver or silver alloy near the interface between the silver or silver alloy layer and the metal oxide layer by completely or partially diffusing the remaining metal in the silver or silver alloy by heat treatment.
- the metal component which is excessive for forming the oxide film is completely diffused into silver or a silver alloy (in this case, only the buffer layer 5 is formed). This is desirable because there is little decrease in the thickness of the oxide layer and the remaining metal component layer when it is not completely diffused into the silver or silver alloy layer (if not completely diffused, both the buffer layer and the remaining layer are formed).
- the total thickness of each is desirably 0.2 ⁇ m or less. When it becomes thicker than this, it becomes difficult to effectively utilize the reflectance of silver or a silver alloy, and the reflectance of light tends to be greatly reduced.
- a heat treatment method such as batch treatment or in-line can be appropriately selected.
- the thickness of the silver or silver alloy layer can be easily adjusted by forming the silver or silver alloy layer by plating.
- forming methods there are a clad method and a sputtering method, but these methods make it difficult to control the thickness and increase the cost.
- the layer made of silver or a silver alloy and the intermediate layer are formed by a plating method, whereby the thickness of the layer made of silver or the silver alloy and the intermediate layer are reduced. It can be adjusted easily. Further, as other forming methods, there are a clad method and a sputtering method, but these methods make it difficult to control the thickness and increase the cost.
- the metal layer for forming the metal oxide layer is formed by a plating method (a wet plating method or a dry plating method such as a vapor deposition method).
- a plating method a wet plating method or a dry plating method such as a vapor deposition method.
- a thin and dense oxide film can be effectively formed. This is an important technique for improving the corrosion resistance of a layer made of silver or a silver alloy.
- there is a cladding method but since it is a mechanical coating method, it is difficult to obtain a dense and uniform coating due to the influence of unevenness due to rolling, and a thin film of 0.2 ⁇ m or less is stabilized. It is extremely difficult to form.
- the metal oxide layer is provided at least at a position where the optical semiconductor element is mounted on the lead frame for an optical semiconductor device (typically shown in FIGS. 4 and 7).
- an optical semiconductor device typically shown in FIGS. 4 and 7.
- a layer made of silver or a silver alloy may be exposed on the surface.
- the metal oxide layer may be partially formed on a layer made of silver or a silver alloy.
- the metal layer for forming the metal oxide layer is formed by partial plating such as stripe plating or spot plating. May be formed. Manufacturing a lead frame in which a metal oxide layer is partially formed can reduce the amount of metal used in unnecessary portions, so that an optical semiconductor device that is easy for the environment and low in cost can be obtained.
- solder wettability can be easily secured, and the effect of being useful at the time of mounting can be obtained.
- Example 1 As Example 1, the conductive substrate shown in Tables 1-1 and 1-2 having a thickness of 0.2 mm and a width of 50 mm was subjected to the following pretreatment and then subjected to the following plating treatment, and the temperature was 100 to 200 ° C. 1 to 48 hours, heat treatment is performed in an air atmosphere using a thermostatic chamber (manufactured by Espec Corp.), so that Invention Examples 1 to 48, Conventional Example 1 and Comparative Example having the configurations shown in Tables 1-1 and 1-2 are used. 1 to 10 lead frames were prepared. When the “reflow” treatment shown in the table is performed, a silver layer and a layer of a metal other than silver (either In, Sn, or Sb) are first formed using a plating solution, respectively.
- a silver layer and a layer of a metal other than silver either In, Sn, or Sb
- a silver alloy (Ag-In, Ag-Sn, or Ag-Sb) layer is formed by performing reflow before the heat treatment, and then a metal layer is provided.
- a metal oxide layer was formed by attaching.
- the lead frame of the first embodiment shown in FIG. 1 was used unless otherwise specified.
- the case where the buffer layer is equal to the original silver alloy layer that is, the original silver alloy layer becomes the buffer layer as it is will be described in detail.
- the “silver alloy layer” after heating and the “buffer layer” are the same. Specifically, the case where the silver alloy layer is disposed by reflow corresponds.
- the intermediate layer thickness and the silver or silver alloy layer thickness shown in Tables 1-1 and 1-2 are thicknesses as an average value (arithmetic average of measured values at arbitrary 10 points). Each layer thickness was measured using a fluorescent X-ray film thickness measuring device (SFT9400: trade name, manufactured by SII).
- C19400 Cu—Fe alloy material: Cu-2.3Fe—0.03P—0.15Zn
- C52100 phosphor bronze: Cu-8Sn—P
- C77000 Yellow: Cu-18Ni-27Zn
- the unit of the numerical value before each element is mass%.
- “A1100”, “A2014”, “A3003”, and “A5052” represent aluminum or aluminum alloy bases, and their components are defined in Japanese Industrial Standards (JIS H 4000: 2006, etc.), respectively.
- “SUS304” and “42 Alloy” represent an iron-based substrate, and “SUS304” is a stainless steel (Fe-18Cr-8Ni-0.06C) defined in Japanese Industrial Standard (JIS G 4305: 2005), “42 “Alloy” represents a 42 mass% Ni-containing iron alloy.
- the following electrolytic degreasing and then the following pickling were performed on the copper alloy base and the iron base among the conductive bases.
- the aluminum base and the aluminum alloy base were subjected to the following electrolytic degreasing, pickling, and zinc replacement.
- the plating solution composition and plating conditions for each plating used in Example 1 are shown below. (Plating conditions)
- Plating solution CuSO 4 .5H 2 O 250 g / liter, H 2 SO 4 50 g / liter, NaCl 0.1 g / liter Plating condition: current density 6 A / dm 2 , temperature 40 ° C.
- Ni plating Ni (SO 3 NH 2) 2 ⁇ 4H 2 O 500g / l, NiCl 2 30 g / l, H 3 BO 3 30g / l Plating Conditions: current density 5A / dm 2, temperature 50 ° C.
- Plating solution AgCN 50 g / liter, KCN 100 g / liter, K 2 CO 3 30 g / liter Plating condition: current density 1 A / dm 2 , temperature 30 ° C.
- Ag-Sn alloy plating (without reflow) Plating solution: KCN 100 g / liter, NaOH 50 g / liter, AgCN 10 g / liter, K 2 Sn (OH) 6 80 g / liter Plating condition: current density 1 A / dm 2 , temperature 40 ° C.
- Plating solution SnSO 4 80 g / liter, H 2 SO 4 80 g / liter Plating condition: current density 2 A / dm 2 , temperature 30 ° C.
- Plating solution InCl 3 45 g / liter, KCN 150 g / liter, KOH 35 g / liter, dextrin 35 g / liter Plating conditions: current density 2 A / dm 2 , temperature 20 ° C.
- Tables 1-1 and 1-2 show the measured thicknesses of the metal oxide layer, the remaining layer, and the buffer layer. From the measurement results, the region having a silver content of less than 80% by mass was defined as the remaining layer, and the region having 80% by mass or more was defined as the buffer layer.
- Reflectivity measurement after the sulfurization test Reflectivity measurement: In a spectrophotometer (U-4100 (trade name, manufactured by Hitachi High-Technologies Corporation)), continuous measurement was performed with the total reflectivity ranging from 400 nm to 800 nm. From this result, the ratio (%) of the reflectance after the sulfidation test to the reflectance before the sulfidation test at 600 nm was obtained as the corrosion resistance. The results are shown in Tables 2-1 and 2-2. (5) Heat dissipation (thermal conductivity): A conductive substrate having an electrical conductivity of 10% or more in terms of IACS (International Annealed Copper Standard) is regarded as “good” as having high thermal conductivity and is less than 10%.
- IACS International Annealed Copper Standard
- the samples were evaluated as “No” because of their low thermal conductivity, and are shown in Tables 2-1 and 2-2. This is because electrical conductivity and thermal conductivity are in a substantially proportional relationship, and those having an electrical conductivity of 10% or more in IACS are judged to have good thermal conductivity and high heat dissipation. Moreover, it is because it is preferable that the conductivity of the conductive substrate is high because the heat generation of the conductive substrate itself can be suppressed. Note that this item is shown for reference. If the items (1) to (4) above are satisfied, the sample will have high heat dissipation even if the item (5) is not satisfied. There is no practical problem by selecting an application that does not require the property.
- the “silver alloy layer” and “buffer layer” after heating shown in the table are the same, that is, when the silver alloy layer is disposed by reflow, the “silver alloy layer” after heating is A numerical value such as the layer thickness was entered in the column, and “ ⁇ ” was entered in the buffer layer column to mean “same on the left (same as silver alloy layer)”.
- a silver alloy layer was formed before being covered with indium or tin by reflowing silver plating and indium plating tin plating provided thereon. Since this silver alloy layer has been subjected to reflow treatment in advance, it is a silver alloy in which silver and other metals are uniformly diffused and the concentration distribution is uniform. From the definition of the buffer layer in the present invention, is there. Moreover, since the metal layer thickness of the outermost layer was thin, all became an oxide film after heating. And about the thickness at the time of description, the thickness after diffusion was represented.
- Comparative Example 5 a 1 ⁇ m Ag—In alloy was formed in advance by reflow treatment, and since the temperature was as high as 600 ° C., a part of indium in the silver alloy layer rose to the surface layer side and was concentrated. . By performing the heat treatment after the reflow, an oxide film having a thin concentration was obtained, but sufficient corrosion resistance was not obtained.
- the thickness in the table is the thickness after diffusion.
- Comparative Example 6 since “no heat treatment”, indium was concentrated and remained on the surface layer. Slightly diffused with silver after plating to form a buffer layer, but the thickness of the buffer layer was extremely thin compared to other test examples subjected to heat treatment. In Comparative Example 6, since it is not after diffusion after heat treatment, the thickness immediately after indium coating on the outermost layer is shown in the table.
- each of the inventive examples satisfies the required reflectance although the reflectance in the visible region may be slightly lower than the conventional example, and the stability after the corrosion resistance test is very high. It turns out that it is excellent.
- the reflectivity after the sulfidation test is hardly lowered and corrosion resistance is reduced. It can be seen that an excellent lead frame material has been obtained, and when this is applied to an optical semiconductor device, it is clear that very excellent reflectance characteristics and long-term reliability are exhibited.
- the reflectance was 80% or more in the entire visible light region having a wavelength of 400 nm to 800 nm, and it was confirmed that the reflectance was good.
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Abstract
Description
(1)導電性基体上に銀または銀合金からなる層が形成された光半導体装置用リードフレームであって、前記銀または銀合金からなる層の外層に銀以外の金属の金属酸化物層を有し、該金属酸化物層は無色透明もしくは銀白色を呈し、かつ厚さが0.001μm以上0.2μm以下であることを特徴とする、光半導体装置用リードフレーム。
(2)前記銀または銀合金からなる層の厚さが0.2μm以上5.0μm以下であることを特徴とする、(1)に記載の光半導体装置用リードフレーム。
(3)前記金属酸化物層は、錫、インジウム、アンチモンからなる群から選ばれた1つ以上の元素を含有する酸化物からなることを特徴とする、(1)または(2)に記載の光半導体装置用リードフレーム。
(4)前記銀合金からなる層が、錫、インジウム、アンチモンの群から選ばれた1つ以上の元素を、合計で20質量%以下含むことを特徴とする(1)~(3)のいずれか一項に記載の光半導体装置用リードフレーム。
(5)前記銀合金からなる層が、錫、インジウム、アンチモンの群から選ばれた1つ以上の元素を、合計で20質量%以下含んでなる外層と、錫、インジウム、アンチモンの群から選ばれた1つ以上の元素を、合計で20質量%未満の量で含んでなる内層との2層からなることを特徴とする(1)~(3)のいずれか一項に記載の光半導体装置用リードフレーム。
(6)前記導電性基体は、銅、銅合金、アルミニウムまたはアルミニウム合金からなる群から選ばれた金属または合金からなることを特徴とする、(1)~(5)のいずれか一項に記載の光半導体装置用リードフレーム。
(7)前記導電性基体と前記銀または銀合金からなる層との間に、ニッケル、ニッケル合金、コバルト、コバルト合金、銅、および銅合金からなる群から選ばれた金属または合金からなる中間層が少なくとも1層形成されていることを特徴とする、(1)~(6)のいずれか一項に記載の光半導体装置用リードフレーム。
(8)前記(1)~(7)のいずれか一項に記載の光半導体装置用リードフレームを製造する方法であって、
導電性基体上に前記銀または銀合金からなる層を形成する工程と、
前記銀または銀合金からなる層の外表面に、銀以外の金属からなる金属層を形成する工程と、
100℃以上でかつ前記銀以外の金属の融点以下の温度において、酸素濃度が1000ppm以上の雰囲気で加熱処理を施すことで、表層に前記銀以外の金属の酸化物からなる金属酸化物層を形成せしめる工程
とを含むことを特徴とする光半導体装置用リードフレームの製造方法。
(9)前記加熱工程において、前記金属酸化物層を形成せしめるとともに、前記金属層の金属であって酸化されなかった残存金属分を前記銀または銀合金からなる層へ拡散させて前記残存金属と銀からなる銀合金の層を形成することを特徴とする、(8)に記載の光半導体装置用リードフレームの製造方法。
(10)前記金属層の厚さが、0.001μm以上0.3μm以下であることを特徴とする、(8)または(9)に記載の光半導体装置用リードフレームの製造方法。
(11)前記残存金属と銀からなる銀合金の層が、錫、インジウム、アンチモンの群から選ばれた1つ以上の元素を、合計で20質量%以下含むことを特徴とする(8)~(10)のいずれか1項に記載の光半導体装置用リードフレームの製造方法。
(12)前記残存金属と銀からなる銀合金の層が、錫、インジウム、アンチモンの群から選ばれた1つ以上の元素を、合計で20質量%以下の量で含む層と、錫、インジウム、アンチモンの群から選ばれた1つ以上の元素を、合計で20質量%未満の量で含む層との2層からなることを特徴とする(8)~(10)のいずれか1項に記載の光半導体装置用リードフレームの製造方法。
(13)前記残存金属と銀からなる銀合金の層を、銀めっきと、錫、インジウムおよびアンチモンの群から選ばれた1つ以上の元素のめっきとを、リフローすることで形成することを特徴とする(8)~(12)のいずれか1項に記載の光半導体装置用リードフレームの製造方法。
(14)前記銀または銀合金からなる層をめっき法により形成することを特徴とする、(8)~(13)のいずれか一項に記載の光半導体装置用リードフレームの製造方法。
(15)前記導電性基体と前記銀または銀合金からなる層との間に、めっき法により中間層を形成する工程をさらに有することを特徴とする、(8)~(14)のいずれか一項に記載の光半導体装置用リードフレームの製造方法。
(16)前記銀以外の金属からなる金属層を形成する工程は、めっき法によることを特徴とする、(8)~(15)のいずれか一項に記載の光半導体装置用リードフレームの製造方法。
(17)(1)~(7)のいずれか一項に記載の光半導体装置用リードフレームと、光半導体素子とを備えた光半導体装置であって、前記光半導体装置用リードフレームの少なくとも前記光半導体素子が搭載される箇所に前記金属酸化物層が設けられていることを特徴とする光半導体装置。
本発明の上記及び他の特徴及び利点は、適宜添付の図面を参照して、下記の記載からより明らかになるであろう。
図1に示すように、本実施態様のリードフレームは、導電性基体1上に銀または銀合金からなる層2が形成され、最外層として金属酸化物からなる金属酸化物層3が形成されており、金属酸化物層3の一部の表面上に光半導体素子4が搭載されている。図中、7はボンディングワイヤを示す。本発明において、本発明のリードフレームは、反射特性が良好であり、封止樹脂との密着性も良好であり、さらに長期に輝度の低下が生じない耐食性および長期信頼性に優れた光半導体装置用リードフレームとなる。
また、本発明において「反射特性が良好」とは、波長400nm以上800nm以下の可視光の全領域において反射率が80%以上であることを意味する。
なお、図2以降の各図中の説明において、特に言及しない符号については、前出の符号と同じ意味を表すこととする。
中間層6は、ニッケル、ニッケル合金、コバルト、コバルト合金、銅、銅合金からなる群から選ばれた金属または合金からなることが好ましい。
導電性基体1および銀または銀合金からなる層2との間に、ニッケル、ニッケル合金、コバルト、コバルト合金、銅または銅合金からなる中間層6を設けることで、光半導体素子の発熱によって導電性基体を構成する材料が銀または銀合金からなる層へ拡散することによる反射率特性の劣化を防ぎ、長期にわたって信頼性の高い反射率特性を得ることができる。
本発明においては、図5に示したように、残存層と緩衝層がどちらも形成される場合の各層の順序は、「導電性基体1-中間層6-銀または銀合金層2-緩衝層5-残存層5A-金属酸化物層3」であって、金属酸化物層3の上に光半導体素子4を搭載する。つまり、形成される場合には、緩衝層5の外側に(上層として)残存層5Aが存在する。
このように、本発明において、金属層を構成する金属の内で酸化されないで残存した金属(残存金属ともいう)がある場合には、この残存金属は銀または銀合金層に拡散して、この残存金属が銀または銀合金からなる層の銀に固溶した層をなしていてもよい。こうして形成された銀とその金属の固溶体からなる銀合金の層においては、最外層の金属酸化物層側から内層の銀又は銀合金層側に向かってその銀以外の金属の濃度勾配が減少している。該銀合金層は、緩衝層1層のみとして形成されるか、または、緩衝層と残存層の2層として形成される。ここで、緩衝層と残存層とは、その銀含有率によって区別され、銀80質量%以上の層を緩衝層といい、銀80質量%未満の層を残存層という。
具体的には、インジウムやスズなどの金属は最表層側(金属酸化物層3側)から濃度勾配をもって次第に含有率が減少している。したがって、インジウムやスズなどの金属は最表層近くでは濃化(より高濃度で存在)しており、すなわち銀濃度がより小さい。本発明において、残存層5とは、インジウムやスズなどの金属濃度が20質量%を超える、すなわち銀濃度が80質量%未満の領域をいい、一方、緩衝層とは、インジウムやスズなどの金属濃度が20質量%以下、すなわち銀濃度が80質量%以上の領域をいう。
ここで、緩衝層5と銀合金層2とは、同一層であっても別層であってもよい。緩衝層5と銀合金層2とが同一層であるとは、元々の銀合金層(2)の組成が、そのまま緩衝層(5)の組成と同一である場合である。例えば、下層に銀層を、その上層に銀以外の金属(例えば、In)層を、それぞれめっきで設けて、これらをリフローして合金化すると、1つの層として銀合金層(例えば、Ag-In層)が得られる。この銀含有率が80質量%以上であれば、これはすなわち緩衝層である。一方、緩衝層5と銀合金層2とが別層であるとは、緩衝層5で固溶体を形成する金属と銀合金層2における金属が別異の金属である場合が挙げられる。
緩衝層が元の銀合金層に等しい、つまり、元の銀合金層がそのまま緩衝層となる場合について詳述する。銀合金層を形成せしめ、その上にインジウム等を被覆して、加熱拡散させた場合には、例えば後述の実施例に示したように、表中に示した加熱後の「銀合金層」と「緩衝層」が同一になる。つまり、実施例でリフローにより銀合金層を配設した場合、加熱後の「銀合金層」の欄に数値を記入し、緩衝層の欄には「左に同様」という意味で「←」を記入した。ちなみにこれらの実施例では銀合金層をリフロー形成させた後にインジウム等をごく薄く被覆させ、さらに低温で加熱処理を施しているので、激しい拡散は起こらず、被覆したインジウム等がそのまま酸化皮膜となっている。
残存層と緩衝層では、残存金属(Sn、In、Sb)が銀と固溶体を形成した銀合金からなっており、残存金属は単体の層としては残っておらず、かつ、残存金属は酸化されていないので酸素は含有せずに、残存金属と銀以外には他の元素は含有しない。
(1)例えば、図1~3や図5~7に示した実施形態のリードフレームにおいて、図4に示した実施形態のリードフレームと同様に、部分的な形成であってもよい。
(2)図3に示した実施形態のリードフレームにおいて、緩衝層5を有していてもよい。
(3)図4~7に示した実施形態のリードフレームにおいて、緩衝層5を有さなくてもよい。
(4)前記緩衝層5を有するいずれかの実施形態(図示した形態も図示しなかった形態も両方含む)のリードフレームにおいて、緩衝層5と金属酸化物層3との間に、残存層5Aを有していてもよい。
(5)前記緩衝層5を有するいずれかの実施形態(図示した形態も図示しなかった形態も両方含む)のリードフレームにおいて、銀または銀合金層2が全て緩衝層5であってもよい。このような形態は、例えば、下層に銀層2とその上層に銀以外の金属層(例えばIn層)を別々にめっきにより設けておき、酸化するための加熱処理の前に、これらの2層にリフロー処理を施すことによって、前記2つの層を完全に合金化して1つの銀合金層としたものであり、銀合金中の銀含有率の前記定義からこの層が緩衝層5に該当する場合である。
以上まとめると、本発明のリードフレームにおいては、銀以外の金属からなる金属層から、
「金属酸化物層3」だけが形成されるか、
「金属酸化物層3」と「緩衝層5」が形成されるか、または
「金属酸化物層3」と「緩衝層5」と「残存層5A」が形成される
3つの場合がある。このそれぞれにおいて、得られるリードフレームにおいては銀または銀合金層(2)を有さずに、これが緩衝層(5)で置き換わっていてもよい。また、金属酸化物層3を含む各層が、図4に代表的に示したように部分的に形成されていてもよい。
実施例1として、厚さ0.2mm、幅50mmの表1-1、1-2に示す導電性基体に以下に示す前処理を行った後、以下に示すめっき処理を施し、100~200℃で1~48時間、大気雰囲気で恒温槽(エスペック社製)を用いて熱処理を施すことにより、表1-1、1-2に示す構成の発明例1~48、従来例1、および比較例1~10のリードフレームを作成した。表中に示した「リフロー」処理を行った場合には、銀層と、銀以外の金属(In、Sn、Sbのいずれか)の層を先にそれぞれめっき液を用いて形成し、これに前記熱処理の前にリフローを施すことで銀合金(Ag-In、Ag-Sn、Ag-Sbのいずれか)層を形成して、その後に、金属層を設け、さらに前記と同様に加熱処理に付すことで金属酸化物層を形成した。なお、リードフレームは、特に断らない限り、図1に示す第1の実施形態のリードフレームとした。
緩衝層が元の銀合金層に等しい、つまり、元の銀合金層がそのまま緩衝層となった場合について詳述する。銀合金層を形成せしめ、その上にインジウム等を被覆して、加熱拡散させた場合には、加熱後の「銀合金層」と「緩衝層」が同一である。具体的には、リフローにより銀合金層を配設した場合が該当する。ちなみに、これらの実施例では銀合金層をリフロー形成させた後にインジウム等をごく薄く被覆させ、さらに低温で加熱処理を施したので、激しい拡散は起こらず、被覆したインジウム等がそのまま酸化皮膜となった。
また、「SUS304」、および「42アロイ」は鉄系基体を表し、「SUS304」は日本工業規格(JIS G 4305:2005)規定のステンレス鋼(Fe-18Cr-8Ni-0.06C)、「42アロイ」は42質量%Ni含有鉄合金を表す。
[電解脱脂]
脱脂液:NaOH 60g/リットル
脱脂条件:2.5A/dm2、温度60℃、脱脂時間60秒
[酸洗]
酸洗液:10%硫酸
酸洗条件:30秒 浸漬、室温
[亜鉛置換]基体がアルミニウムの時に使用
亜鉛置換液:NaOH 500g/リットル、ZnO 100g/リットル、酒石酸(C4H6O6) 10g/リットル、FeCl2 2g/リットル
処理条件:30秒 浸漬、室温
(めっき条件)
めっき液:CuSO4・5H2O 250g/リットル、H2SO4 50g/リットル
、NaCl 0.1g/リットル
めっき条件:電流密度 6A/dm2、温度 40℃
[Niめっき]
めっき液:Ni(SO3NH2)2・4H2O 500g/リットル、NiCl2 30g/リットル、H3BO3 30g/リットル
めっき条件:電流密度 5A/dm2、温度 50℃
[Coめっき]
めっき液:Co(SO3NH2)2・4H2O 500g/リットル、CoCl2 30g/リットル、H3BO3 30g/リットル
めっき条件:電流密度 5A/dm2、温度 50℃
めっき液:AgCN 50g/リットル、KCN 100g/リットル、K2CO3 30g/リットル
めっき条件:電流密度 1A/dm2、温度 30℃
[Ag-Sn合金めっき](リフローせず)
めっき液:KCN 100g/リットル、NaOH 50g/リットル、AgCN 10g/リットル、K2Sn(OH)6 80g/リットル
めっき条件:電流密度 1A/dm2、温度 40℃
[Ag-Pd合金めっき](リフローせず)
めっき液:KAg[CN]2 20g/リットル、PdCl2 25g/リットル、K4O7P2 60g/リットル、KSCN 150g/リットル
めっき条件:電流密度 0.5A/dm2、温度 40℃
[Ag-In合金めっき](リフローせず)
めっき液:KCN 100g/リットル、NaOH 50g/リットル、AgCN 10g/リットル、InCl3 1~20g/リットル
めっき条件:電流密度 2A/dm2、温度 30℃
めっき液:SnSO4 80g/リットル、H2SO4 80g/リットル
めっき条件:電流密度 2A/dm2、温度 30℃
[Inめっき]
めっき液:InCl3 45 g/リットル、KCN 150g/リットル、KOH 35g/リットル、デキストリン 35g/リットル
めっき条件:電流密度 2A/dm2、温度 20℃
[Sbめっき]
めっき液:KSb(C4H2O6)・1.5H2O 100g/リットル、KNaC4H4O6・4H2O 50g/リットル、KOH 10g/リットル
めっき条件:電流密度 1A/dm2、温度 30℃
前記Snめっき、Inめっき、Sbめっきは、Agめっき後に行い、さらにリフローに付すことでそれぞれAg-Sn合金、Ag-In合金、Ag-Sb合金に、合金化した。
上記条件により得られた、発明例、比較例、および従来例のリードフレームについて、下記試験および基準により評価を行った。その結果を表2-1、2-2に示す。
(1)反射率測定:分光光度計(U-4100(商品名、日立ハイテクノロジーズ社製))において、全反射率を400nm~800nmにかけて連続測定を実施した。このうち、400nm、600nm、および800nmにおける反射率(%)を表2-1、2-2に示す。
(2)金属酸化物層の厚さ:AES測定装置(Model-680(商品名、アルバック・ファイ社製))において、深さ方向分析を実施、スパッタレートを厚さに換算して厚さを算出した。測定された金属酸化物層、残存層、緩衝層の厚さを表1-1、1-2に示す。なお、測定結果から、銀の含有率が80質量%未満の領域を残存層、80%質量以上の領域を緩衝層とした。
(3)耐食性:硫化試験(JIS H8502記載)、H2S 3ppm、24時間後の腐食状態について、レイティングナンバー(RN)評価を実施した。結果を表2-1、2-2に示す。なお、ここで、レイティングナンバーが9以上の場合は、光半導体素子(LED素子)を40000時間点灯しても輝度の低下が数%程度と小さいことを意味する。
(4)硫化試験後の反射率測定:反射率測定:分光光度計(U-4100(商品名、日立ハイテクノロジーズ社製))において、全反射率を400nm~800nmにかけて連続測定を実施した。この結果から、耐食性として、600nmにおいて、硫化試験後の反射率の硫化試験前の反射率に対する比(%)を求めた。結果を表2-1、2-2に示す。
(5)放熱性(熱伝導性):導電性基材の導電率がIACS(International Annealed Copper Standard)で10%以上であるものを熱伝導性が高いとして「良」とし、10%未満であるものを熱伝導性が低いとして「否」とし、表2-1、2-2に示した。これは、導電率と熱伝導性はほぼ比例関係にあり、IACSで10%以上の導電率があるものは熱伝導性がよく放熱性も高いと判断されるためである。また、導電性基材の導電率が高いと、導電性基材自体の発熱も抑制できて好ましいためである。なお、この項目は参考のために示すものであり、上記(1)~(4)の各項目の評価を満足すれば、(5)の項目の評価を満足しなくとも、そのサンプルは高い放熱性が要求されないような用途を選択することにより実用上問題ない。
発明例4~6、9、10、33~38と比較例2、3、6、8では、インジウムなどの金属からなる金属層で被覆し、加熱処理を施すと、該金属の残存分が銀層の表層側に拡散することによって、緩衝層または残存層が形成された。従って、緩衝層や残存層に含まれる銀の量に応じて、金属層厚≠(金属酸化物層厚+緩衝層厚+残存層厚)であった。表には、各層の厚さとして、前記拡散後の厚さを表した。
発明例26~30と比較例4では、銀めっきとその上に設けたインジウムめっき錫めっきなどをリフローに付したことによって、インジウムやスズなどで被覆する前に銀合金層を形成した。この銀合金層では、予めリフロー処理に付したため、銀と他の金属が均一に拡散されていて濃度分布が均一な銀合金であり、前記本発明における緩衝層の定義から表中の緩衝層である。また、最表層の金属層厚は薄いため、全てが加熱後、酸化皮膜となった。そして、表記際の厚さについては拡散後の厚さを表した。
比較例5では、1μmのAg-In合金を予めリフロー処理によって形成せしめ、しかもその温度が600℃と高温であったので、銀合金層中のインジウムの一部が表層側に上がり、濃化した。リフロー後に加熱処理を施したことによって、濃化分が薄い酸化皮膜となったが、十分な耐食性は得られなかった。なお、上記と同様に、表中の厚さは拡散後の厚さで表した。
比較例6では、「加熱処理なし」なので、インジウムは表層に濃化して残存した。若干、めっき後に銀と拡散し、緩衝層を形成したが、加熱処理を行った他の試験例と比較して、緩衝層の厚さは極めて薄くなった。この比較例6では、熱処理後の拡散後ではないので、最表層にインジウム被覆を行った直後の厚さを表中に示した。
2 銀または銀合金からなる層
3 金属酸化物層
4 光半導体素子
5 緩衝層
6 中間層
7 ボンディングワイヤ
Claims (17)
- 導電性基体上に銀または銀合金からなる層が形成された光半導体装置用リードフレームであって、前記銀または銀合金からなる層の外層に銀以外の金属の金属酸化物層を有し、該金属酸化物層は無色透明もしくは銀白色を呈し、かつ厚さが0.001μm以上0.2μm以下であることを特徴とする、光半導体装置用リードフレーム。
- 前記銀または銀合金からなる層の厚さが0.2μm以上5.0μm以下であることを特徴とする、請求項1に記載の光半導体装置用リードフレーム。
- 前記金属酸化物層は、錫、インジウム、アンチモンからなる群から選ばれた1つ以上の元素を含有する酸化物からなることを特徴とする、請求項1または2に記載の光半導体装置用リードフレーム。
- 前記銀合金からなる層が、錫、インジウム、アンチモンの群から選ばれた1つ以上の元素を、合計で20質量%以下含むことを特徴とする請求項1~3のいずれか一項に記載の光半導体装置用リードフレーム。
- 前記銀合金からなる層が、錫、インジウム、アンチモンの群から選ばれた1つ以上の元素を、合計で20質量%以下含んでなる外層と、錫、インジウム、アンチモンの群から選ばれた1つ以上の元素を、合計で20質量%未満の量で含んでなる内層との2層からなることを特徴とする請求項1~3のいずれか一項に記載の光半導体装置用リードフレーム。
- 前記導電性基体は、銅、銅合金、アルミニウムまたはアルミニウム合金からなる群から選ばれた金属または合金からなることを特徴とする、請求項1~5のいずれか一項に記載の光半導体装置用リードフレーム。
- 前記導電性基体と前記銀または銀合金からなる層との間に、ニッケル、ニッケル合金、コバルト、コバルト合金、銅、および銅合金からなる群から選ばれた金属または合金からなる中間層が少なくとも1層形成されていることを特徴とする、請求項1~6のいずれか一項に記載の光半導体装置用リードフレーム。
- 請求項1~7のいずれか一項に記載の光半導体装置用リードフレームを製造する方法であって、
導電性基体上に前記銀または銀合金からなる層を形成する工程と、
前記銀または銀合金からなる層の外表面に、銀以外の金属からなる金属層を形成する工程と、
100℃以上でかつ前記銀以外の金属の融点以下の温度において、酸素濃度が1000ppm以上の雰囲気で加熱処理を施すことで、表層に前記銀以外の金属の酸化物からなる金属酸化物層を形成せしめる工程
とを含むことを特徴とする光半導体装置用リードフレームの製造方法。 - 前記加熱工程において、前記金属酸化物層を形成せしめるとともに、前記金属層の金属であって酸化されなかった残存金属分を前記銀または銀合金からなる層へ拡散させて前記残存金属と銀からなる銀合金の層を形成することを特徴とする、請求項8に記載の光半導体装置用リードフレームの製造方法。
- 前記金属層の厚さが、0.001μm以上0.3μm以下であることを特徴とする、請求項8または9に記載の光半導体装置用リードフレームの製造方法。
- 前記残存金属と銀からなる銀合金の層が、錫、インジウム、アンチモンの群から選ばれた1つ以上の元素を、合計で20質量%以下含むことを特徴とする請求項8~10のいずれか1項に記載の光半導体装置用リードフレームの製造方法。
- 前記残存金属と銀からなる銀合金の層が、錫、インジウム、アンチモンの群から選ばれた1つ以上の元素を、合計で20質量%以下の量で含む層と、錫、インジウム、アンチモンの群から選ばれた1つ以上の元素を、合計で20質量%未満の量で含む層との2層からなることを特徴とする請求項8~10のいずれか1項に記載の光半導体装置用リードフレームの製造方法。
- 前記残存金属と銀からなる銀合金の層を、銀めっきと、錫、インジウムおよびアンチモンの群から選ばれた1つ以上の元素のめっきとを、リフローすることで形成することを特徴とする請求項8~12のいずれか1項に記載の光半導体装置用リードフレームの製造方法。
- 前記銀または銀合金からなる層をめっき法により形成することを特徴とする、請求項8~13のいずれか一項に記載の光半導体装置用リードフレームの製造方法。
- 前記導電性基体と前記銀または銀合金からなる層との間に、めっき法により中間層を形成する工程をさらに有することを特徴とする、請求項8~14のいずれか一項に記載の光半導体装置用リードフレームの製造方法。
- 前記銀以外の金属からなる金属層を形成する工程は、めっき法によることを特徴とする、請求項8~15のいずれか一項に記載の光半導体装置用リードフレームの製造方法。
- 請求項1~7のいずれか一項に記載の光半導体装置用リードフレームと、光半導体素子とを備えた光半導体装置であって、前記光半導体装置用リードフレームの少なくとも前記光半導体素子が搭載される箇所に前記金属酸化物層が設けられていることを特徴とする光半導体装置。
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US13/382,995 US20120168810A1 (en) | 2009-07-10 | 2010-06-23 | Lead frame for optical semiconductor device, method of producing the same, and optical semiconductor device |
JP2010539079A JP4885309B2 (ja) | 2009-07-10 | 2010-06-23 | 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法および光半導体装置 |
KR1020127001999A KR101485226B1 (ko) | 2009-07-10 | 2010-06-23 | 광반도체 장치용 리드 프레임, 광반도체 장치용 리드 프레임의 제조방법 및 광반도체 장치 |
CN201080034641.9A CN102473830B (zh) | 2009-07-10 | 2010-06-23 | 光半导体装置用引线框架及其制造方法、及光半导体装置 |
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TW201110427A (en) | 2011-03-16 |
TWI496325B (zh) | 2015-08-11 |
JP4885309B2 (ja) | 2012-02-29 |
JPWO2011004711A1 (ja) | 2012-12-20 |
EP2453491A4 (en) | 2014-01-08 |
EP2453491A1 (en) | 2012-05-16 |
US20120168810A1 (en) | 2012-07-05 |
CN102473830A (zh) | 2012-05-23 |
CN102473830B (zh) | 2015-04-29 |
KR101485226B1 (ko) | 2015-01-22 |
KR20120036991A (ko) | 2012-04-18 |
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