WO2011001557A1 - アクティブマトリクス基板の製造装置及び製造方法、並びに表示パネルの製造装置及び製造方法 - Google Patents
アクティブマトリクス基板の製造装置及び製造方法、並びに表示パネルの製造装置及び製造方法 Download PDFInfo
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- WO2011001557A1 WO2011001557A1 PCT/JP2010/000926 JP2010000926W WO2011001557A1 WO 2011001557 A1 WO2011001557 A1 WO 2011001557A1 JP 2010000926 W JP2010000926 W JP 2010000926W WO 2011001557 A1 WO2011001557 A1 WO 2011001557A1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
- G01R31/52—Testing for short-circuits, leakage current or ground faults
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
- G09G2360/145—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen
- G09G2360/147—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen the originated light output being determined for each pixel
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
Definitions
- the present invention relates to an active matrix substrate manufacturing apparatus and manufacturing method, and a display panel manufacturing apparatus and manufacturing method, and more particularly to a technique for detecting defects in an active matrix substrate and a display panel.
- a thin film transistor (hereinafter referred to as “TFT”) is provided for each pixel which is the minimum unit of an image. Fine image display can be performed by steadily applying a predetermined voltage to the liquid crystal layer of the pixel.
- Patent Document 1 proposes an inspection method for identifying a defective pixel address using an infrared image as a method for detecting a short-circuit defect between a scanning line and a signal line in which a plurality of wirings are bundled to find a short circuit defect therebetween.
- FIG. 16 is a plan view of an active matrix substrate 120 in which each pixel is provided with a pair of storage capacitor electrodes divided into two as an example.
- the active matrix substrate 120 includes a plurality of pixel electrodes 118 provided in a matrix, and a plurality of gate lines 114a arranged in parallel to each other along the upper and lower sides of each pixel electrode 118.
- One or a plurality of TFTs 105 are provided so as to correspond to 118.
- the TFT 105 includes a semiconductor layer 112 provided on a substrate, a gate insulating film (not shown) provided to cover the semiconductor layer 112, a gate electrode 114aa provided on the gate insulating film, and a gate electrode 114aa.
- a first interlayer insulating film (not shown) provided so as to cover the source electrode, and a source electrode (source line 116a) and a drain electrode 116b provided on the first interlayer insulating film.
- a second interlayer insulating film (not shown) is provided on the first interlayer insulating film so as to cover the source electrode (source line 116a) and the drain electrode 116b. Further, as shown in FIG.
- the source electrode (source line 116a) and the drain electrode 116b are connected to each other through contact holes 115a and 115b formed so as to penetrate the laminated film of the gate insulating film and the first interlayer insulating film.
- the drain electrode 116b is connected to the drain region of the semiconductor layer 112 and connected to the pixel electrode 118 through a contact hole 117a formed so as to penetrate the second interlayer insulating film.
- the drain region of the semiconductor layer 112 has, for example, a pair of capacitive electrodes 112da and 112db divided into two, and each of the capacitive electrodes 112da and 112db forms a gate insulating film on the capacitive line 114b.
- a pair of auxiliary capacitors are configured by overlapping each other.
- the capacitive electrode divided into two is illustrated, and in the description of the present invention later, the capacitive electrode divided into two consistently is illustrated. However, according to the gist of the present invention, Even if it is divided into three or more, its function and effect are not changed.
- the manufacturing yield is improved.
- a leak leakage having a diameter of about several ⁇ m is formed in the gate insulating film, and a weak current flows between the capacitor electrode 112da or 112db and the capacitor line 114b.
- the position of the short-circuit defect in the pair of auxiliary capacitors of the pixel Specifically, it is impossible to specify which of the pair of auxiliary capacitors caused the short-circuit defect.
- the inspection method disclosed in Patent Document 1 is not very suitable for observation in the far infrared region from the viewpoint of sensitivity and imaging properties.
- the position of the short-circuit defect in each pixel is determined by visual observation, and in the case of a minute bright spot caused by a minute leak whose leakage current is less than several nA.
- the cause of the defect is a pinhole shape having a diameter of about several ⁇ m, and it is considered difficult to visually recognize the short-circuit defect.
- a short-circuit defect is obtained by extracting coordinates indicating an abnormal value equal to or greater than a threshold value from a difference (or quotient) between an infrared image in a voltage application state and an infrared image in a no-voltage application state. Therefore, in order to ensure the detection accuracy, a certain waiting period is required until each of these two images is in a steady state, and in order to ensure the accuracy of the detection result, the time required for the inspection There is a risk that it will be sacrificed.
- the present invention has been made in view of such a point, and an object thereof is to identify the position of a short-circuit defect in a defective pixel as easily as possible.
- an inspection signal is input to the inspected substrate or the inspected panel to cause the defective pixel to generate heat, and to generate heat at the defective pixel.
- the position of the short-circuit defect that is the cause of the defective pixel is specified by sensing with far-infrared thermography.
- an active matrix substrate manufacturing apparatus is an active matrix substrate manufacturing apparatus that detects a short-circuit defect in an active matrix substrate having a plurality of pixels arranged in a matrix and corrects the short-circuit defect. Then, an inspection signal is input to the stage on which the inspection substrate to be the active matrix substrate is placed and the inspection substrate placed on the stage, and the coordinates of the defective pixel in which the short-circuit defect has occurred are electrically
- the inspection pixel is input to the defective pixel detection unit to be detected and the substrate to be inspected placed on the stage to cause the defective pixel detected by the defective pixel detection unit to generate heat and to generate heat at the defective pixel.
- a defect position specifying unit for detecting the position of the short-circuit defect in the defective pixel by sensing with a far infrared region thermography.
- the signal (source) line number and the scanning (gate) line number of the defective pixel having the short-circuit defect are found by inputting the inspection signal to the substrate to be inspected. For example, the coordinates of defective pixels on the substrate to be inspected are determined. Then, the defect position specifying unit re-inputs the inspection signal to the substrate to be inspected to cause the defective pixel to generate heat, and the heat generation at the defective pixel at the coordinates determined by the defective pixel detection unit is detected by far-infrared thermography. Thus, the position of the short-circuit defect in the defective pixel is specified.
- the substrate to be inspected has a plurality of capacitor lines arranged in parallel to each other, a thin film transistor provided so as to correspond to each pixel, and overlaps each pixel with each capacitor line via an insulating film.
- the defective pixel detection unit may be configured to detect the coordinates of the defective pixel by a charge detection method.
- a plurality of auxiliary capacitors are configured from the capacitance line, the plurality of capacitance electrodes, and the insulating film between them.
- the charge written in the auxiliary capacitor is read and statistically processed, and then The presence or absence of a short circuit defect is detected.
- the signal (source line) number and the scanning (gate line) number corresponding to the defective pixel in which the short-circuit defect has occurred in the substrate to be inspected are electrically detected. Specifically determined.
- the defective pixel detection unit may include a high frequency signal generator.
- the defective pixel detection unit since the defective pixel detection unit includes the high-frequency signal generator, it is possible to input an AC waveform inspection signal at an arbitrary frequency to a plurality of auxiliary capacitors of each pixel. Based on the principle, a temperature rise due to a short-circuit defect caused by a weak leak in the substrate to be inspected can be easily detected by alternating current even if it cannot be easily detected by direct current.
- the resistance R 2 is 1M ⁇ internal wiring, it is applied a DC voltage of 5V to a pixel pinhole-shaped short-circuit defects corresponding to the resistance of 500G ⁇ connected in series, the current flowing 10pA, and the respective power P Rx consumed by resistor, 50PW becomes the leakage resistor R 1, since the wiring resistance R 2 in 0.1FW, most is consumed by the leak resistance R 1.
- the heat generation amount at the leak part is constant volume heat capacity C v, Si (1.66 Jcm of silicon ).
- the amount of heat Q Joule (50a (J)) generated by energizing the leak resistor R 1 for 1 ⁇ sec is diffused several hundred times as large as the amount of 6 fJ due to a temperature gradient generated by an instantaneous temperature rise at the heat source. It diffuses to the surroundings by amount. Therefore, even if a DC waveform inspection signal is input to each auxiliary capacitor, it is difficult to detect a temperature change because the amount of heat generated by a short-circuit defect in the substrate to be inspected is smaller than the amount of diffusion to the periphery.
- the amount of heat generation is inversely proportional to the overall resistance in the inspection by applying DC, it cannot be detected unless it is a leak defect in which a current of several nA or more of a defect shape that can be visually recognized flows.
- the short-circuit defect and the wiring resistance between the capacitor electrode and the capacitor line can be expressed as an equivalent circuit in which a resistor R ′ is connected in series to a parallel CR circuit, and the heat converted from the power consumption due to energization. Occurs in a resistance R (see Q in the figure) due to a short circuit, a wiring resistance R ′ (see Q ′ in the figure), and an internal resistance component (negligible level) of the capacitor C.
- the power consumption P Z′cr is obtained from the complex impedance (Z ′ CR ) of this equivalent circuit.
- P Z'cr (t) E e I e ⁇ cos ⁇ 'CR + cos (2 ⁇ t + ⁇ ' CR) ⁇
- the power consumption PCR, R ′ at the resistor R ′ is obtained as (E e /
- the boundary condition is derived from complex impedance (Z ′ C ) with lim (R ⁇ 1 ⁇ 0) [that is, lim (x ⁇ 1 ⁇ 0)]. it can.
- / R ′ at the normal part are the above-described x (replacement of RC ⁇ ) value and y (replacement of R′C ⁇ ). ) Specifically, the values vary as shown in Table 1 below. Here, in the case of R >> R ′, it is clear from Table 1, but if there is no difference between C and R ′ between the abnormal part and the normal part of the defective pixel, the influence exerted on the leak resistance R by the AC application is as follows. It does not occur as much as when DC is applied.
- and cos ⁇ ′ CR of the normal part are specifically shown in the following table with respect to the value of the angular velocity ⁇ . It changes like the left column of 3.
- FIG. 9 is a partially enlarged view of a pixel in which a short-circuit defect S has occurred in the auxiliary capacitor
- FIG. 10 is an equivalent circuit diagram corresponding thereto.
- the capacitive electrode is divided into two, by designing R ′> 4R ′′, the heat generation at R ′ can be controlled predominantly with respect to R ′′, and the detection sensitivity can be increased.
- the drain region of the semiconductor layer 12 is split into a region overlapping with the capacitor line 14b to form a pair of capacitor electrodes 12da and 12db, and each capacitor electrode 12da and 12db. Overlaps the capacitor line 14b via a gate insulating film, thereby forming a pair of auxiliary capacitors.
- the auxiliary capacitor on the left side in the drawing includes a CR circuit in which a resistor is connected in series to the CR parallel circuit described above. Can be considered.
- the temperature change in the plate-shaped electric heating element (see FIG. 11), which is a heat generation source, is a situation where the heat generated is transmitted downward.
- the entry and exit of temperature heat at the surface d 1 at a position away from the heat source d 0 by the distance d is approximately calculated using the heat balance calculation by the following difference method and the energy conservation law.
- ⁇ SiO2 (1.2 Wm ⁇ 1 K ⁇ 1 ) is a thermal diffusion coefficient of SiO 2
- S (80 ⁇ m 2 ) is a cross section of the heat diffusing flux window
- Cv (1. 66 Jcm ⁇ 3 K ⁇ 1 ) is a constant volume heat capacity of the thin film Si.
- the result of simulation by the difference method is shown as an example in FIG.
- the temperature distribution due to heat generation propagates instantaneously in the vicinity of a distance of about 7 ⁇ m from the heat source, the average temperature gradient tends to be inclined at 0.04 K ⁇ m ⁇ 1 , and the square of the distance from the vicinity where the distance from the heat source exceeds 30 ⁇ m.
- a tendency to decay in inverse proportion to is expected.
- the temperature change ⁇ T in the heating element has heat generated by energization during the gate opening period ⁇ t gate, on as shown in FIG. 13, and heating and cooling (thermal diffusion).
- the temperature measurement time constant is longer than the gate period TG , so it can be averaged.
- the temperature difference between the branched portions of the semiconductor layer 12 becomes 8 mK after 1 second, and after 12 seconds. Since it becomes 27 mK and then 62 mK after 60 seconds, the position of the short-circuit defect in the defective pixel can be specified from the temperature distribution generated at this time, and the target to be corrected can be determined.
- a defect correction unit that corrects the short-circuit defect identified by the defect position identification unit by laser light irradiation may be provided.
- the defect correction unit that corrects the short-circuit defect by laser light irradiation since the defect correction unit that corrects the short-circuit defect by laser light irradiation is provided, the short-circuit defect specified by the defect position specifying unit can be specifically corrected in the defect correction unit. become.
- the defect position specifying unit has a first objective lens for far infrared rays, the defect correction unit has a second objective lens for laser light, and the first objective lens and the second objective lens are You may be comprised in the mechanism which can mutually switch by the slide system in the position spaced apart from the stage.
- the far-infrared first objective lens in the defect position specifying portion and the second objective lens for laser light in the defect correction portion can be switched to each other by a slide method at a position away from the stage. Therefore, the lens position shift when switching from the first objective lens to the second objective lens is suppressed, and the short-circuit defect whose position is specified by the defect position specifying unit can be reliably corrected by the defect correcting unit.
- the active matrix substrate manufacturing method is a method for manufacturing an active matrix substrate in which a short-circuit defect is detected in an active matrix substrate in which a plurality of pixels are provided in a matrix, and the short-circuit defect is corrected.
- the defect position specification that inputs and heats the defective pixel detected by the defective pixel detection unit and senses the heat generation in the defective pixel by far-infrared thermography to identify the position of the short-circuit defect in the defective pixel And a process.
- the signal (source) line number and the scanning (gate) line number of the defective pixel having the short-circuit defect are found by inputting the inspection signal to the inspected substrate. For example, the coordinates of defective pixels on the substrate to be inspected are determined.
- the defect position specifying step the defective pixel is heated by inputting the inspection signal again to the substrate to be inspected, and the heat generation in the defective pixel at the coordinates determined in the defective pixel detecting step is detected by the far infrared thermography.
- the position of the short-circuit defect in the defective pixel is specified.
- a defect correcting step of correcting the short-circuit defect identified in the defect position identifying step by laser light irradiation may be provided.
- the defect correction step of correcting the short-circuit defect by laser light irradiation since the defect correction step of correcting the short-circuit defect by laser light irradiation is provided, it is specifically possible to correct the short-circuit defect specified in the defect position specifying step in the defect correction step. become.
- the substrate to be inspected has a plurality of capacitor lines arranged in parallel to each other, a thin film transistor provided so as to correspond to each pixel, and overlaps each pixel with each capacitor line via an insulating film.
- a plurality of capacitive electrodes provided separately and connected to the thin film transistor, and in the defective pixel detection step, a short-circuit defect between each of the capacitive lines and the plurality of capacitive electrodes is detected;
- the connection between the thin film transistor and at least one of the plurality of capacitor electrodes corresponding to the position of the short-circuit defect specified in the defect position specifying process may be released.
- a plurality of divided auxiliary capacitors are configured by the capacitance line, the plurality of divided capacitance electrodes, and the insulating film therebetween.
- the defective pixel detection process a defective pixel in which a short-circuit defect has occurred between each capacitance line and a plurality of divided capacitive electrodes is detected, and in the defect position identification process, the defective pixel detected in the defective pixel detection process is heated.
- the heat generation is detected by far-infrared thermography to identify the position of the short-circuit defect in the defective pixel.
- the defect correction process a plurality of divisions corresponding to the position of the short-circuit defect identified in the defect position identification process are performed. Since at least one of the capacitor electrodes is separated from the thin film transistor, the effects of the present invention are specifically exhibited.
- the substrate to be inspected may be a substrate before forming a plurality of pixel electrodes and an insulating film disposed below each pixel electrode.
- the substrate to be inspected is a substrate before forming a plurality of pixel electrodes and an insulating film to be disposed under each pixel electrode
- the plurality of pixel electrodes are subjected to the defect correction process.
- an insulating film to be disposed below each pixel electrode is formed. For this reason, holes in the correction marks formed by laser light irradiation on the surface of the active matrix substrate and surface surface abnormalities are backfilled and flattened by the formation of an insulating film performed in a later process, and thus manufactured in subsequent processes.
- the surface of the active matrix substrate becomes flat as much as the surface of the active matrix substrate manufactured by a normal manufacturing method.
- the alignment disorder of the liquid crystal layer at the laser correction location is suppressed, so that display quality that does not cause light leakage that may be induced by the correction operation is improved. It becomes possible to perform a defect correction that can be held.
- the substrate to be inspected has a plurality of capacitor lines arranged in parallel to each other, a thin film transistor provided so as to correspond to each pixel, and overlaps each pixel with each capacitor line via an insulating film.
- a plurality of capacitance electrodes provided in a divided manner and connected to the thin film transistor.
- the plurality of capacitance electrodes constitute an auxiliary capacitance of a capacitance C, and a resistance R ′ is connected to each auxiliary capacitance.
- a high-frequency signal having an angular velocity ⁇ is supplied to the plurality of auxiliary capacitors of each pixel, and ⁇ CR ′ is 0.1 to 10, preferably 0.3 to 3. You may input as follows.
- FIG. 15 is a graph showing the relationship between the heat generation amount P and the frequency (angular velocity ⁇ ) in the resistor R ′ connected in series to the pair of auxiliary capacitors.
- the angular velocity ⁇ (2 ⁇ f) of the high-frequency signal is increased, heat generation due to the resistance inside the pixel becomes remarkable, but the normal part (PC , R ′ ) and the abnormal part ( PCR, R ′ ).
- the temperature difference can be detected from about 1 nW, if the angular velocity of the high-frequency signal is input so that it is in the range of 0.1 to 10 times the cutoff frequency, the short-circuited auxiliary capacitance is detected. Thus, the position of the short-circuit defect in the defective pixel is reliably specified. If the angular velocity of the high-frequency signal is input so as to be in the range of 0.3 to 3 times the cut-off frequency, the position of the short-circuit defect in the defective pixel can be more reliably specified.
- the display panel manufacturing apparatus is a display panel manufacturing apparatus that detects a short-circuit defect in a display panel in which a plurality of pixels are provided in a matrix and corrects the short-circuit defect.
- Defective pixel detection that optically detects the coordinates of a defective pixel in which a short circuit defect has occurred by inputting an inspection signal to the stage on which the panel to be inspected is placed and the panel to be inspected placed on the stage And the inspection signal input to the inspection panel placed on the stage to cause the defective pixel detected by the defective pixel detection unit to generate heat, and to generate heat in the defective pixel by far-infrared thermography
- a defect position identifying unit that senses and identifies the position of the short-circuit defect in the defective pixel.
- the signal (source) line number and the scanning (gate) line number of the defective pixel having the short-circuit defect are determined by inputting the inspection signal to the panel to be inspected. For example, the coordinates of defective pixels in the panel to be inspected are determined. Then, the defect position specifying unit re-inputs the inspection signal to the panel to be inspected to cause the defective pixel to generate heat, and the heat generation at the defective pixel at the coordinates determined by the defective pixel detection unit is detected by far infrared region thermography. Thus, the position of the short-circuit defect in the defective pixel is specified.
- the display panel manufacturing method is a display panel manufacturing method for detecting a short-circuit defect in a display panel in which a plurality of pixels are provided in a matrix and correcting the short-circuit defect.
- a test signal is input to the panel to be inspected, and a defective pixel detection step for optically detecting the coordinates of the defective pixel in which the short-circuit defect has occurred, and the test signal is input to the panel to be inspected,
- the signal (source) line number and the scanning (gate) line number of the defective pixel having the short-circuit defect are found by inputting the inspection signal to the panel to be inspected. For example, the coordinates of defective pixels in the panel to be inspected are determined. Then, in the defect position specifying step, the defective pixel is heated by inputting the inspection signal again to the panel to be inspected, and the heat generation in the defective pixel at the coordinates determined in the defective pixel detecting step is detected by the far infrared thermography. Thus, the position of the short-circuit defect in the defective pixel is specified.
- an inspection signal is input to the inspected substrate or the inspected panel to cause the defective pixel to generate heat, and the heat generation at the defective pixel is detected by far-infrared thermography. Then, since the position of the short-circuit defect that is the cause of the defective pixel is specified, the position of the short-circuit defect in the defective pixel can be specified as easily as possible.
- FIG. 1 is a perspective view of a substrate correcting apparatus 80a according to the first embodiment.
- FIG. 2 is a plan view of the active matrix substrate 20a manufactured by the substrate correction apparatus 80a.
- FIG. 3 is a cross-sectional view of the active matrix substrate 20a taken along line III-III in FIG.
- FIG. 4 is a flowchart showing a method for manufacturing the active matrix substrate 20a using the substrate correcting apparatus 80a.
- FIG. 5 is a perspective view of the panel correction device 80a according to the second embodiment.
- FIG. 6 is a plan view of an active matrix substrate 20c according to another embodiment.
- FIG. 7 is a plan view showing the source lines constituting the active matrix substrate 20c, the capacitor lines of the resistors R orthogonal thereto, and the capacitors C formed at the intersections thereof.
- FIG. 8 is an equivalent circuit diagram of an auxiliary capacitor in which a short-circuit defect has occurred.
- FIG. 9 is a partially enlarged view of a pixel in which a short-circuit defect S has occurred in one auxiliary capacitor.
- FIG. 10 is an equivalent circuit diagram of a pixel in which a short-circuit defect S has occurred in one auxiliary capacitor.
- FIG. 11 is a perspective view schematically showing the propagation of heat from the flat plate heat source.
- FIG. 12 is a graph showing the result of simulating the relationship between the distance from the heat source and the temperature rise by the difference method.
- FIG. 13 is a schematic diagram showing the relationship between the input timing of the scanning signal to the gate line of the substrate to be inspected and the temperature change ⁇ T profile due to heat generation / heat diffusion.
- FIG. 14 is a partially enlarged view showing heat generation in the pixel in which the short-circuit defect S has occurred in one of the pair of auxiliary capacitors.
- FIG. 15 is a graph showing the relationship between the heat generation amount P and the frequency (angular velocity ⁇ ) in the resistor R ′ connected in series to the pair of auxiliary capacitors.
- FIG. 16 is a plan view of an active matrix substrate 120 in which each pixel is provided with a pair of storage capacitor electrodes.
- Embodiment 1 of the Invention 1 to 4 show Embodiment 1 of an active matrix substrate manufacturing apparatus and method according to the present invention.
- FIG. 1 is a perspective view of the substrate correcting apparatus 80a of the present embodiment.
- the substrate correcting device 80 a is a stage 30 a for placing a substrate 19 to be inspected, which will be described later as an active matrix substrate, and a substrate 19 to be inspected placed on the stage 30 a.
- a defective pixel detector 40a for electrically detecting the coordinates of a defective pixel in which a short-circuit defect has occurred, and an inspection signal for actual driving on the inspected substrate 19 placed on the stage 30a.
- the defect position specifying unit 50 for specifying the short-circuit position in the defective pixel and the short-circuit defect specified by the defect position specifying unit 50 for correcting the defect pixel by irradiating with laser light.
- a defect correcting unit 60 for specifying the short-circuit position in the defective pixel and the short-circuit defect specified by the defect position specifying unit 50 for correcting the defect pixel by irradiating with laser light.
- the stage 30 a is connected to a stage controller 31 and has an X-axis direction, a Y-axis direction, a Z-axis direction, and a stage rotation axis R with the substrate 19 to be inspected placed on the upper surface. It is configured to be appropriately movable in the axial direction.
- the defective pixel detection unit 40 a accesses a prober 42 for inputting an inspection signal to the inspected substrate 19 and the TFT of each pixel of the inspected substrate 19, and the auxiliary capacitance of each pixel. After the charge is written on the auxiliary capacitor, the charge written in the auxiliary capacitor is read out to detect the presence or absence of a short-circuit defect in each pixel, thereby determining the coordinates of the defective pixel and the stage controller 31 having the defect of the substrate 19 to be inspected.
- An array inspection device 41a for supplying pixel coordinates and a high-frequency signal generator 43 for generating a high-frequency inspection signal input from the array inspection device 41a to the substrate 19 to be inspected are provided.
- the defect position specifying unit 50 includes an infrared first objective lens 51 formed of Si, Ge, or the like provided on the inspection substrate 19 side, and thermography of defective pixels on the inspection substrate 19. And a thermography detected by the detector 52 can be observed on a monitor 73.
- the defect correcting section 60 is provided on the inspected substrate 19 side, similarly to the second objective lens 61a having a relatively low magnification for visual observation provided on the inspected substrate 19 side.
- a mirror 62, a mirror 63, a lens 64, a mirror 65, and a laser power source 67 connected to a laser light source 66 are provided.
- a light receiver 72 is connected to the mirror 63 via a lens 71, and an image before / after defect correction on the surface of the substrate 19 to be inspected is confirmed / recorded via a monitor 73. It can be done.
- the first objective lens 51 and the second objective lens 61a / 61b are fixed to a slide portion 74b attached to an elongated frame-shaped guide rail 74a so as to be movable in parallel.
- FIG. 2 is a plan view of the active matrix substrate 20a manufactured by the substrate correcting device 80a
- FIG. 3 is a cross-sectional view of the active matrix substrate 20a taken along line III-III in FIG.
- the active matrix substrate 20a includes a plurality of pixel electrodes 18 provided in a matrix and a plurality of gates arranged in parallel to each other along the upper and lower sides of each pixel electrode 18.
- One or a plurality of TFTs 5 are provided so as to correspond to each pixel electrode 18.
- the TFT 5 includes a semiconductor layer 12 provided on the insulating substrate 10 via a base coat film 11, a gate insulating film 13 provided so as to cover the semiconductor layer 12, and a gate insulating film. 13, a first interlayer insulating film 15 provided to cover the gate electrode 14 aa, a source electrode (source line 16 a) and a drain electrode provided on the first interlayer insulating film 15. 16b.
- a second interlayer insulating film 17 is provided on the first interlayer insulating film 15 so as to cover the source electrode (source line 16a) and the drain electrode 16b, as shown in FIG.
- the gate electrode 14 aa is a portion where each gate line 14 a protrudes laterally for each pixel P, and overlaps the channel region 12 c of the semiconductor layer 12.
- the source electrode is a part of each source line 16a as shown in FIGS. 2 and 3, and through a contact hole 15a formed in the laminated film of the gate insulating film 13 and the first interlayer insulating film 15. And connected to the source region 12 s of the semiconductor layer 12.
- the drain electrode 16b is connected to the drain region 12d of the semiconductor layer 12 through a contact hole 15b formed in the laminated film of the gate insulating film 13 and the first interlayer insulating film 15, as shown in FIGS.
- the pixel electrode 18 is connected through a contact hole 17 a formed in the second interlayer insulating film 17.
- the drain region 12d of the semiconductor layer 12 has a pair of capacitive electrodes 12da and 12db as shown in the example in which the capacitive electrode is divided into two in FIG. 2, and the capacitive electrodes 12da and 12db are connected to the capacitive line 14b.
- a pair of auxiliary capacitors is formed by overlapping with the gate insulating film 13 interposed therebetween.
- the inspected substrate 19 is a substrate before the second interlayer insulating film 17 and the plurality of pixel electrodes 18 are formed on the active matrix substrate 20a.
- FIG. 4 is a flowchart showing a method of manufacturing the active matrix substrate 20a using the substrate correcting device 80a.
- the manufacturing method according to the present embodiment includes a preparation process for preparing the substrate 19 to be inspected, a defective pixel detection process for detecting coordinates of a defective pixel in which a short circuit defect has occurred, and a defect for specifying a position of the short circuit defect in the defective pixel.
- a silicon oxide film is formed on the entire substrate of the insulating substrate 10 such as a glass substrate by a plasma CVD (Chemical Vapor Deposition) method to form the base coat film 11.
- a plasma CVD Chemical Vapor Deposition
- an amorphous silicon film is formed on the entire substrate on which the base coat film 11 is formed, for example, by plasma CVD using disilane or the like as a source gas, and then irradiation with high-power pulsed laser light, heat treatment, etc. Crystallization is performed to convert it into a polysilicon film. Thereafter, the polysilicon film is patterned using photolithography to form the semiconductor layer 12.
- a gate insulating film 13 is formed on the entire substrate on which the semiconductor layer 12 has been formed, for example, by forming a silicon oxide film or the like by plasma CVD.
- a tungsten film or the like is formed on the entire substrate on which the gate insulating film 13 is formed by a sputtering method, and then patterned using photolithography to form the gate line 14a, the gate electrode 14aa, and the capacitor line 14b.
- the semiconductor layer 12 is ion-doped with an ion doping apparatus through the gate insulating film 13, and the channel region 12c is overlapped with the gate electrode 14aa and the source region is formed outside thereof. 12s and the drain region 12d are formed, and then heat treatment is performed, and activation of doped phosphorus or boron is performed.
- a silicon oxide film is formed on the entire substrate on which the gate line 14a, the gate electrode 14aa, and the capacitor line 14b are formed by a plasma CVD method to form the first interlayer insulating film 115.
- the stacked film of the second gate insulating film 13 and the first interlayer insulating film 15 is partially etched away to form contact holes 15a and 15b.
- a titanium film, an aluminum film, and a titanium film are sequentially formed on the entire substrate on the first interlayer insulating film 15 by sputtering, and then patterned using photolithography to form a source line (source electrode). ) 16a and drain electrode 16b are formed.
- heat treatment is performed to hydrogenate the semiconductor layer 12 to terminate the dangling bonds.
- the substrate 19 to be inspected can be prepared.
- ⁇ Defect position identification process> First, the defective pixel in which the short-circuit defect S has occurred below the first objective lens 51 by appropriately moving the stage 30a on which the substrate 19 to be inspected in which the coordinates of the defective pixel are specified in the defective pixel detection step is placed. And the defective pixel and its vicinity are magnified with a microscope (see St4 in FIG. 4).
- the short-circuit defect S of the defective pixel specified in the defect position specifying step is arranged below the second objective lens 61b, and the optical system is Switch from the infrared system to the laser correction system (see St7a in FIG. 4).
- the inspection signal waveform is switched and inspected by the array inspection apparatus 41a to send the defect category of the defect S in the defective pixel to the control / analysis processing system, and the control / analysis processing system determines the cause of the short-circuit defect S in its position and defect category.
- Etc. see St7b in FIG. 4
- a correction recipe is selected (see St8 in FIG. 4).
- the inspected substrate 19 by irradiating the inspected substrate 19 with a laser beam, for example, one of the branched portions of the drain region 12d of the semiconductor layer 12 connected to the capacitor electrode 12db corresponding to the position of the short-circuit defect S is cut and short-circuited.
- the defect S is corrected (see St9 in FIG. 4).
- the second interlayer insulating film 17 is formed by applying, for example, acrylic resin or the like to the entire substrate 19 to be inspected in which the short-circuit defect S has been corrected in the defect correcting step by spin coating.
- the second interlayer insulating film 17 is partially etched away to form a contact hole 17a.
- a transparent conductive film such as an ITO (IndiumInTin Oxide) film, for example, is formed on the entire substrate on which the second interlayer insulating film 17 having the contact holes 17a is formed by sputtering, and then photolithography is used.
- the pixel electrode 18 is formed by patterning.
- the active matrix 20a can be manufactured as described above.
- the inspection signal is supplied to the inspected substrate 19 in the defective pixel detection unit 40a and the defective pixel detection process. Since the signal (source) line number and the scanning (gate line) number of the defective pixel having the short-circuit defect S are determined, the coordinates of the defective pixel on the inspected substrate 19 are determined. In the defect position specifying unit 50 and the defect position specifying step, the inspection pixel 19 is re-inputted to cause the defective pixel to generate heat, and the defective pixel having the coordinates determined by the defective pixel detection unit 40a generates heat.
- the defective pixel detection unit 40a since the defective pixel detection unit 40a includes the high-frequency signal generator 43, an AC waveform inspection signal is supplied to a plurality of divided auxiliary capacitors of each pixel P. It is possible to input at any frequency in the frequency band, and it is easy to raise the temperature of the position to be corrected in the defective pixel caused by the short-circuit defect S on the inspected substrate 19 by direct or indirect means. Can be detected.
- the first objective lens 51 for far infrared rays of the defect position specifying unit 50 and the second objective lens 61a / 61b for laser light of the defect correcting unit 60 are provided on the stage. Since they can be switched to each other by a slide method at a position away from 30a, the lens position shift when switching from the first objective lens 51 to the second objective lens 61a / 61b is suppressed, and the position is determined by the defect position specifying unit 50.
- the identified short-circuit defect S can be corrected quickly and reliably by the defect correcting unit 60.
- the substrate 19 to be inspected is formed before forming the plurality of pixel electrodes 18 and the second interlayer insulating film 17 disposed below each pixel electrode 19. Since it is a substrate, after performing the defect correcting step, the plurality of pixel electrodes 18 and the second interlayer insulating film 17 disposed under each pixel electrode 18 are formed. Therefore, correction trace holes formed by laser light irradiation on the surface of the active matrix substrate 20a and abnormal surface conditions are backfilled and planarized by the formation of the second interlayer insulating film 17, so that the surface of the active matrix substrate is usually normal. The surface becomes as flat as the surface of the active matrix substrate manufactured by this manufacturing method.
- the alignment disorder of the liquid crystal layer at the laser correction location is eliminated, so that a high display without causing light leakage that may be induced by the correction operation. It is possible to perform defect correction capable of maintaining the quality.
- the method of detecting the coordinates of the defective pixel on the inspection target substrate which is an active matrix substrate is exemplified by the charge detection method.
- the present invention is not limited to the defect detection by other electrical inspection such as pixel potential imaging. Pixel coordinates may be detected.
- the method of electrically inspecting the substrate to be inspected before the pixel electrode is formed is exemplified.
- the present invention extracts the defect of the pixel electrode from the active matrix substrate after the pixel electrode is formed. For this purpose, electrical inspection may be performed.
- the auxiliary capacitance electrode is illustrated in the form of being divided into two, but the present invention does not change its operation and effect even if the number of division is three or more.
- FIG. 5 is a perspective view of the panel correction device 80b of the present embodiment.
- the same parts as those in FIGS. 1 to 4 are denoted by the same reference numerals, and detailed description thereof is omitted.
- the manufacturing apparatus and the manufacturing method of the active matrix substrate for correcting the short-circuit defect by detecting the short-circuit defect in the substrate state are exemplified, but in this embodiment, the short-circuit defect is detected by detecting the short-circuit defect in the panel state.
- a manufacturing apparatus and a manufacturing method of a liquid crystal display panel (hereinafter, referred to as “inspected panel 25”) that corrects the above are exemplified.
- the substrate correcting device 80b inputs a test signal to a stage 30b for mounting the panel to be inspected 25 described later and the panel to be inspected 25 mounted on the stage 30b from the counter substrate side. Then, an inspection signal is input to the defective pixel detection unit 40b for detecting the coordinates of the defective pixel in which the short-circuit defect has occurred and the panel 25 to be inspected placed on the stage 30b, and the defective pixel is caused to generate heat.
- the defect position specifying unit 50 for specifying the short-circuit position in the defective pixel and the defect correcting unit 60 for correcting the short-circuit defect specified by the defect position specifying unit 50 by irradiation with laser light are provided.
- the stage 30b is connected to the stage controller 31, and in the state where the panel 25 to be inspected is placed on the upper surface, the X axis direction, the Y axis direction, the Z axis direction, and the stage rotation axis R It is configured to be appropriately movable in the axial direction.
- the stage 30b is made of a transparent material that can transmit light from a backlight (not shown) to a display area (not shown) of the panel 25 to be inspected.
- the defective pixel detection unit 40b detects the presence or absence of a short circuit defect in each pixel by driving and displaying the prober 42 for inputting an inspection signal to the panel 25 to be inspected and the panel 25 to be inspected.
- the coordinates of the defective pixels are determined, and the lighting inspection device 41b for supplying the coordinates of the defective pixels of the panel 25 to be inspected to the stage controller 31, and the inspection input to the panel 25 to be inspected from the lighting inspection device 41b.
- a high-frequency signal generator 43 for generating a high-frequency signal.
- the panel to be inspected 25 that is, the liquid crystal display panel will be described.
- the panel to be inspected 25 includes an active matrix substrate and a counter substrate which are arranged to face each other, and a liquid crystal layer sealed between the active matrix substrate and the counter substrate.
- the configuration of the active matrix substrate is substantially the same as that of the active matrix substrate 20a described in the first embodiment.
- the counter substrate includes, for example, a black matrix provided in a frame shape on an insulating substrate and in a lattice shape in the frame, and a red layer, a green layer, and a blue layer respectively provided between the lattices of the black matrix. And a common electrode provided to cover the black matrix and the color filter.
- the liquid crystal layer is made of a nematic phase liquid crystal material having electro-optical characteristics.
- a gate signal is sent to the gate electrode (14aa) through the gate line (14a), and the TFT (5) is turned on.
- the source signal is sent to the source electrode via the source line (16a), and a predetermined charge is written to the pixel electrode (18) via the semiconductor layer (12) and the drain electrode (16b).
- a potential difference is generated between each pixel electrode (18) of the active matrix substrate (20a) and the common electrode of the counter substrate, and a predetermined voltage is applied to the liquid crystal layer.
- the light transmittance of the liquid crystal layer is adjusted and an image rich in color is displayed.
- the substrate inspection by the charge detection method is replaced with the lighting inspection in the defective pixel detection step and the defect position specifying step of the first embodiment.
- the defect correcting step of the first embodiment the object to be irradiated with laser light is simply replaced with the panel 25 to be inspected from the substrate 19 to be inspected, and the description thereof is omitted.
- a short circuit is caused by inputting an inspection signal to the panel 25 to be inspected. Since the position of the defective pixel having the defect S is detected, the coordinates of the defective pixel in the panel 25 to be inspected are determined. In the defect position specifying unit 50 and the defect position specifying process, the defective pixel is caused to generate heat by inputting the inspection signal to the panel 25 to be inspected again.
- the heat generated by the defective pixel propagates to the inside of the substrate and reaches the back surface, even if the counter substrate of the panel to be inspected 25 is placed facing the stage 30b, the temperature change of the defect position is caused. It can be detected by far infrared thermography.
- the position of the short-circuit defect in the defective pixel is identified by sensing the heat generation in the defective pixel at the coordinates determined by the defective pixel detection unit 50 by far-infrared thermography. According to the Vin's displacement law, radiation at room temperature is identified.
- the heat generation due to the short-circuit defect in the defective pixel is, for example, far infrared region thermography as compared with the case where near infrared region thermography expected to be used in the inspection method disclosed in Patent Document 1 is used. Therefore, the position of the short-circuit defect in the defective pixel can be identified as easily as possible in the liquid crystal display panel.
- FIG. 6 is a plan view of the active matrix substrate 20c of this embodiment, and FIG. 7 is formed at the source line constituting the active matrix substrate 20c, the capacitor line of the resistor R orthogonal thereto, and the intersection thereof.
- 3 is a plan view showing a capacitor C.
- the manufacturing apparatus and the manufacturing method for detecting the short-circuit defect of the active matrix substrate and the liquid crystal display panel and correcting the short-circuit defect are illustrated, but the present invention is also applied to detection of disconnection of each capacitor line. be able to.
- each pixel is formed with a CR circuit by a resistance R of the wiring and a capacitor C connected to the branch.
- the capacitance line 14b is disconnected at the X portion, no high frequency signal is input to the capacitance line 14b on the left side of the X portion.
- the high-frequency signal is input to each of the other capacitive lines 14b in the solid line portion, and heat is generated due to high-frequency vibration in the pixels along each of the capacitive lines 14b in the solid line portion. Therefore, the disconnection location of the capacitor line 14b can be detected by detecting the temperature difference due to heat generation of each pixel by thermography.
- an active matrix substrate and a liquid crystal display panel including the active matrix substrate are exemplified.
- the present invention is not limited to other display panels such as an organic EL (ElectroLuminescence) display panel, and each pixel such as an X-ray sensor.
- the present invention can also be applied to an active matrix substrate that constitutes a sensor substrate that reads electric charges charged in electrodes.
- the present invention is useful for manufacturing an active matrix substrate and a display panel including the active matrix substrate because the position of a short-circuit defect in a pixel of the active matrix substrate can be easily specified.
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Abstract
Description
各抵抗R1、R2での消費電力PR1、PR2は、各抵抗値に比例[PR1/R1=PR2/R2={E/(R1+R2)}2]するので、抵抗値の大きい抵抗R1に偏って発熱する。
[発熱収支量(ΔQ/J)]=[温度Tでの熱容量(C(T)/JK-1)]×[温度変化量(ΔT/K)]
[ジュール発熱量(ΔQJ/J)]=∫{[通電電流(I/A)]×[印加電圧(E/V)]}d[通電時間(t/s)]
であるので、直流印加での上昇する温度上昇は、外部への仕事がないとして次式となる。
例えば、内部配線の抵抗R2が1MΩであり、それに直列に接続された500GΩの抵抗に相当するピンホール状の短絡欠陥のある画素に5Vの直流電圧を印加すると、流れる電流は10pAとなり、各抵抗体にて消費される電力PRxは、リーク抵抗R1では50pWとなり、配線抵抗R2では0.1fWとなるので、殆どはリーク抵抗R1で消費される。リーク抵抗R1部が、膜厚(d=1μm)、直径(2r=3μmφ)の円柱状であるとすると、リーク部での発熱量は、シリコンの定容熱容量Cv,Si(1.66Jcm-3K-1)、円柱容積V(2.25π×10-4×3cm3)から4.26Ks-1の温度上昇速度で、一旦、発熱部の温度の上昇に費やされる(下式第2項を0と仮定した場合)。
しかしながら、被検査基板における短絡欠陥領域の温度が局所的に上昇すれば、実際の被検査基板では、短絡欠陥で発生した熱がその周辺との間に生じた温度勾配[grad(T)]に比例した量で熱交換される。この熱交換は、窓としての断面S(m2)を介して、熱流速密度(J=S-1×dQdis/dt=-κ×grad(T))だけの移動量で拡散する。例えば、リーク抵抗R1に1μ秒間通電で発生した熱量QJoule(50a(アト)J)は、発熱源での瞬時の温度上昇によって生じる温度勾配によって、6fJという発生する量の数百倍の拡散量で以って周辺へ拡散する。そのため、各補助容量に直流波形の検査信号を入力しても、被検査基板における短絡欠陥での発熱量が周辺への拡散量より微量であるがゆえ温度変化を感知することは困難である。
x=ωCR、y=ωCR'(>0)とすると、
Z'CR/R'=1+{xy(1+x-2)}-1-{y(1+x-2)}-1i
(|Z'CR|/R')2={1+(x-1+y-1)2}/(1+x-2)
φ'CR=Tan-1[-{y(1+x-2)+x-1}-1]
PZ'cr(t)=EeIe{cosφ'CR+cos(2ωt+φ'CR)}
時間平均して、抵抗R'での消費電力PCR,R'は、電流条件から(Ee/|Z'CR|)2R'と求められ、抵抗Rでの消費電力PCR,Rは、分圧条件から(Ee-Ee,CRR')2/Rと求められる。
(|Z'C|/R')2=1+y-2
φ'C=Tan-1(-y-1)
PZ'C(t)は、EeIe{cosφ'C+cos(2ωt+φ'C)}
抵抗R'での消費電力PC,R'は、電流条件から(Ee/|Z'C|)2R'となる。
ここで、R'=1MΩ、C=1pFのとき、y=1として、|Z'C|=√2MΩより、PC,R'=6.25μWとなる。
ΔQall=CvS∫ΔT∂x=∫P∂t (x=0~∞)
ここで、κSiO2(1.2Wm-1K-1)は、SiO2の熱拡散係数であり、S(80μm2)は、熱の拡散する流束の窓の断面であり、Cv(1.66Jcm-3K-1)は、薄膜Siの定容熱容量である。
図1~図4は、本発明に係るアクティブマトリクス基板の製造装置及び製造方法の実施形態1を示している。
まず、ガラス基板などの絶縁基板10の基板全体に、プラズマCVD(Chemical Vapor Deposition)法により、例えば、酸化シリコン膜などを成膜して、ベースコート膜11を形成する。
まず、上記準備工程で準備した被検査基板19を、基板修正装置80aのステージ30a上に載置する。
まず、上記欠陥画素検出工程で欠陥画素の座標が特定された被検査基板19を載置したステージ30aを適宜移動させることにより、第1対物レンズ51の下方に、短絡欠陥Sが発生した欠陥画素を配置させ、その欠陥画素及びその近傍を顕微鏡で拡大する(図4中のSt4参照)。
まず、スライド部74bをガイドレール74a内でスライドさせることにより、例えば、第2対物レンズ61bの下方に、上記欠陥位置特定工程で特定された欠陥画素の短絡欠陥Sを配置させて、光学系を赤外線系からレーザー修正系に切り換える(図4中のSt7a参照)。そして、アレイ検査装置41aで検査信号波形を切換検査することで欠陥画素における欠陥Sの欠陥範疇を制御・解析処理系に送り、制御・解析処理系で短絡欠陥Sの原因をその位置や欠陥範疇などにより解析し(図4中のSt7b参照)て、修正レシピを選択する(図4中のSt8参照)。
まず、上記欠陥修正工程で短絡欠陥Sが修正された被検査基板19の基板全体に、例えば、アクリル樹脂などをスピンコーティング法で塗布して、第2層間絶縁膜17を形成する。
図5は、本実施形態のパネル修正装置80bの斜視図である。なお、以下の各実施形態において、図1~図4と同じ部分については同じ符号を付して、その詳細な説明を省略する。
図6は、本実施形態のアクティブマトリクス基板20cの平面図であり、図7は、アクティブマトリクス基板20cを構成するソース線、それに直交する抵抗Rの容量線、及びそれらの交差部に形成される容量Cを示す平面図である。
S 短絡欠陥
5 TFT
12da,12db 容量電極
13 ゲート絶縁膜
14b 容量線
17 第2層間絶縁膜
18 画素電極
19 被検査基板
20a,20c アクティブマトリクス基板
25 液晶表示パネル(被検査パネル)
30a,30b ステージ
40a,40b 欠陥画素検出部
43 高周波信号発生部
50 欠陥位置特定部
51 第1対物レンズ
60 欠陥修正部
61a,61b 第2対物レンズ
80a 基板修正装置(アクティブマトリクス基板の製造装置)
80b パネル修正装置(表示パネルの製造装置)
Claims (13)
- 複数の画素がマトリクス状に設けられたアクティブマトリクス基板における短絡欠陥を検出して、該短絡欠陥を修正するアクティブマトリクス基板の製造装置であって、
上記アクティブマトリクス基板となる被検査基板を載置するステージと、
上記ステージに載置された被検査基板に検査用信号を入力して、短絡欠陥が発生した欠陥画素の座標を電気的に検出する欠陥画素検出部と、
上記ステージに載置された被検査基板に上記検査用信号を入力して、上記欠陥画素検出部で検出された欠陥画素を発熱させると共に、該欠陥画素における発熱を遠赤外域サーモグラフィーで感知して、該欠陥画素における上記短絡欠陥の位置を特定する欠陥位置特定部とを備えていることを特徴とするアクティブマトリクス基板の製造装置。 - 請求項1に記載されたアクティブマトリクス基板の製造装置において、
上記被検査基板は、互いに平行に配設された複数の容量線と、上記各画素に対応するように設けられた薄膜トランジスタと、上記各画素に上記各容量線に絶縁膜を介して重なるように分割して設けられ、該薄膜トランジスタに接続された複数の容量電極とを有し、
上記欠陥画素検出部は、上記欠陥画素の座標を電荷検出法により検出するように構成されていることを特徴とするアクティブマトリクス基板の製造装置。 - 請求項2に記載されたアクティブマトリクス基板の製造装置において、
上記欠陥画素検出部は、高周波信号発生器を備えていることを特徴とするアクティブマトリクス基板の製造装置。 - 請求項1乃至3の何れか1つに記載されたアクティブマトリクス基板の製造装置において、
上記欠陥位置特定部で特定された短絡欠陥をレーザー光の照射により修正する欠陥修正部を備えていることを特徴とするアクティブマトリクス基板の製造装置。 - 請求項4に記載されたアクティブマトリクス基板の製造装置において、
上記欠陥位置特定部は、遠赤外線用の第1対物レンズを有し、
上記欠陥修正部は、レーザー光用の第2対物レンズを有し、
上記第1対物レンズ及び第2対物レンズは、上記ステージから離間した位置でもってスライド方式により互いに切り換え可能な仕組みに構成されていることを特徴とするアクティブマトリクス基板の製造装置。 - 複数の画素がマトリクス状に設けられたアクティブマトリクス基板における短絡欠陥を検出して、該短絡欠陥を修正するアクティブマトリクス基板の製造方法であって、
上記アクティブマトリクス基板となる被検査基板に検査用信号を入力して、短絡欠陥が発生した欠陥画素の座標を電気的に検出する欠陥画素検出工程と、
上記被検査基板に上記検査用信号を入力して、上記欠陥画素検出部で検出された欠陥画素を発熱させると共に、該欠陥画素における発熱を遠赤外域サーモグラフィーで感知して、該欠陥画素における上記短絡欠陥の位置を特定する欠陥位置特定工程とを備えることを特徴とするアクティブマトリクス基板の製造方法。 - 請求項6に記載されたアクティブマトリクス基板の製造方法において、
上記欠陥位置特定工程で特定された短絡欠陥をレーザー光の照射により修正する欠陥修正工程を備えることを特徴とするアクティブマトリクス基板の製造方法。 - 請求項7に記載されたアクティブマトリクス基板の製造方法において、
上記被検査基板は、互いに平行に配設された複数の容量線と、上記各画素に対応するように設けられた薄膜トランジスタと、上記各画素に上記各容量線に絶縁膜を介して重なるように分割して設けられ、該薄膜トランジスタに接続された複数の容量電極とを有し、
上記欠陥画素検出工程では、上記各容量線と上記複数の容量電極との間の短絡欠陥を検出し、
上記欠陥修正工程では、上記欠陥位置特定工程で特定された短絡欠陥の位置に対応する上記複数の容量電極の少なくとも1つと上記薄膜トランジスタとの接続を解除することを特徴とするアクティブマトリクス基板の製造方法。 - 請求項6乃至8の何れか1つに記載されたアクティブマトリクス基板の製造方法において、
上記被検査基板は、複数の画素電極、及び該各画素電極の下層に配置する絶縁膜を形成する前の基板であることを特徴とするアクティブマトリクス基板の製造方法。 - 請求項6、7及び9の何れか1つに記載されたアクティブマトリクス基板の製造方法において、
上記被検査基板は、互いに平行に配設された複数の容量線と、上記各画素に対応するように設けられた薄膜トランジスタと、上記各画素に上記各容量線に絶縁膜を介して重なるように分割して設けられ、該薄膜トランジスタに接続された複数の容量電極とを有し、
上記各画素では、上記複数の容量電極が容量Cの補助容量をそれぞれ構成し、該各補助容量に抵抗R’の配線抵抗が直列に接続され、
上記欠陥位置特定工程では、上記各画素の複数の補助容量に角速度ωの高周波信号を、ωCR’が0.1~10、好ましくは、0.3~3となるように入力することを特徴とするアクティブマトリクス基板の製造方法。 - 請求項8に記載されたアクティブマトリクス基板の製造方法において、
上記各画素では、上記複数の容量電極が容量Cの補助容量をそれぞれ構成し、該各補助容量に抵抗R’の配線抵抗が直列に接続され、
上記欠陥位置特定工程では、上記各画素の複数の補助容量に角速度ωの高周波信号を、ωCR’が0.1~10、好ましくは、0.3~3となるように入力することを特徴とするアクティブマトリクス基板の製造方法。 - 複数の画素がマトリクス状に設けられた表示パネルにおける短絡欠陥を検出して、該短絡欠陥を修正する表示パネルの製造装置であって、
上記表示パネルとなる被検査パネルを載置するステージと、
上記ステージに載置された被検査パネルに検査用信号を入力して、短絡欠陥が発生した欠陥画素の座標を光学的に検出する欠陥画素検出部と、
上記ステージに載置された被検査パネルに上記検査用信号を入力して、上記欠陥画素検出部で検出された欠陥画素を発熱させると共に、該欠陥画素における発熱を遠赤外域サーモグラフィーで感知して、該欠陥画素における上記短絡欠陥の位置を特定する欠陥位置特定部とを備えていることを特徴とする表示パネルの製造装置。 - 複数の画素がマトリクス状に設けられた表示パネルにおける短絡欠陥を検出して、該短絡欠陥を修正する表示パネルの製造方法であって、
上記表示パネルとなる被検査パネルに検査用信号を入力して、短絡欠陥が発生した欠陥画素の座標を光学的に検出する欠陥画素検出工程と、
上記被検査パネルに上記検査用信号を入力して、上記欠陥画素検出部で検出された欠陥画素を発熱させると共に、該欠陥画素における発熱を遠赤外域サーモグラフィーで感知して、該欠陥画素における上記短絡欠陥の位置を特定する欠陥位置特定工程とを備えることを特徴とする表示パネルの製造方法。
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