WO2010106733A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- WO2010106733A1 WO2010106733A1 PCT/JP2010/001015 JP2010001015W WO2010106733A1 WO 2010106733 A1 WO2010106733 A1 WO 2010106733A1 JP 2010001015 W JP2010001015 W JP 2010001015W WO 2010106733 A1 WO2010106733 A1 WO 2010106733A1
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- semiconductor device
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- semiconductor element
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00309—Processes for packaging MEMS devices suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R17/00—Piezoelectric transducers; Electrostrictive transducers
- H04R17/02—Microphones
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
Definitions
- the present invention relates to a semiconductor device, and more particularly, to a semiconductor device formed using a MEMS (Micro Electro Mechanical Systems) technology.
- MEMS Micro Electro Mechanical Systems
- a semiconductor device using an electret capacitor having a vibrating electrode there is a semiconductor device using an electret capacitor having a vibrating electrode.
- a MEMS semiconductor element and a CMOS (Complementary Metal Oxide Semiconductor) semiconductor element are mounted on a substrate and are generally covered by a case.
- sound waves enter the inside through a through hole formed in the substrate or case, and are converted into an electrical signal and output by the diaphragm structure of the MEMS semiconductor element.
- This semiconductor device is manufactured by forming a plurality of semiconductor devices at the same time and then dividing them into individual pieces. The division here is performed by a dicing method or a processing method of cutting with a mold.
- dicing method In the dicing method, generally, an annular dicing saw to which particles of diamond or CBN (Cubic Boron Nitride) are fixed is rotated at high speed to be crushed. In the dicing method, processing is performed in which a dicing saw is rotated at high speed while flowing cutting water for removing crushed debris and suppressing frictional heat.
- a dicing saw is rotated at high speed while flowing cutting water for removing crushed debris and suppressing frictional heat.
- the diaphragm structure and the beam structure of the MEMS semiconductor element are fragile structures, if the cutting water enters through the sound holes, the cutting water may break down.
- the mounting density has been increasing, electronic components have been miniaturized, and in the dicing method, the problem of cutting water penetrating into the sound holes has become an increasing problem.
- cutting waste is scattered.
- the scattered chips may enter the vicinity of the sound hole or the sound hole, adversely affect the vibration of the diaphragm structure, and may affect the sound quality.
- a board on which a microphone chip and a special purpose semiconductor (ASIC) chip are mounted and a metal case 610 covering the board are provided, and an acoustic hole is provided on the metal case 610 or the board side.
- a silicon condenser microphone 600 in which the first sound hole 610a or the second sound hole 620a is formed is disclosed (see Patent Document 1 below).
- an adhesive 630 is formed on the connection pattern 621 for joining the metal case 610 and the connection pattern 621 for joining the metal case 610 and the substrate.
- the generated cutting waste enters the first sound hole 610a or the second sound hole 620a, adversely affects the vibration of the diaphragm structure, and affects the sound quality. May end up.
- the present invention solves the above problem, and an object of the present invention is to provide a semiconductor device that can prevent intrusion of cutting water and cutting waste at the time of individualizing and improve reliability. .
- a semiconductor device includes a substrate, a semiconductor element having a piezoelectric conversion function mounted on at least one main surface of the substrate, and fixed to the main surface of the substrate.
- the predetermined substance preferably has a melting point of less than 220 ° C, a softening temperature of less than 220 ° C, or a volatilization temperature of less than 220 ° C.
- the through hole formed in the substrate or case is filled with a substance having a melting point lower than that of the solder, so that cutting waste and cutting water when the semiconductor device is divided into pieces are penetrated. There is no penetration into the hole. Then, for example, the substance installed in the through hole is melted by the heat treatment after the division such as mounting on the mother substrate, and the through hole is opened by spreading around the through hole. As a result, it is possible to prevent the cutting water and the cutting waste from entering during the process of separating into individual pieces, thereby realizing a semiconductor device with improved reliability.
- a semiconductor device is fixed to a main surface of a substrate, a semiconductor element having a piezoelectric conversion function mounted on at least one main surface of the substrate, and the substrate.
- the semiconductor device may include a case that covers the semiconductor element and a through hole formed in the substrate or the case, and a hygroscopic material having a hygroscopic property may be provided on an inner wall of the through hole.
- a highly hygroscopic material is installed on the inner wall of the through hole installed in the substrate or case, so that cutting water penetrates when dividing by dicing to separate the semiconductor device. It can be attached to the inner wall of the hole. Accordingly, for example, the semiconductor element is protected in the diaphragm structure, and thus a highly reliable semiconductor device can be provided.
- a semiconductor device is fixed to a main surface of a substrate, a semiconductor element having a piezoelectric conversion function mounted on at least one main surface of the substrate, and the substrate.
- the adhesive for fixing the case has a through hole formed by heat when the substrate is mounted on, for example, the mother substrate. Therefore, there is no need to previously install a through hole in the substrate or case. Further, when the semiconductor device is divided to be separated into pieces, the semiconductor device is hermetically sealed, so that cutting waste and cutting water generated by the processing during the division do not enter the through hole. In this manner, a semiconductor device that can prevent the penetration of cutting water and cutting waste during the process of singulation and improve reliability can be realized.
- a semiconductor device is fixed to a main surface of a substrate, a semiconductor element having a piezoelectric conversion function mounted on at least one main surface of the substrate, and the substrate.
- a dam that is higher than the thickness of the adhesive formed between the semiconductor element and the adhesive, and the adhesive is one or a plurality of notches where the adhesive is not applied to a part of the periphery of the region
- the dam may be formed between the one or more notches and the semiconductor element, and the notch may be a through hole after the substrate and the case are fixed.
- a notch portion where no adhesive is partially applied is formed in advance in a region of the adhesive applied to the substrate in order to fix the case, and a dam is formed on the substrate so that the substrate or the case is formed. It is not only necessary to install the through holes in advance, and cutting water generated during the dicing process is not allowed to enter. In this way, it is possible to realize a semiconductor device that can prevent the penetration of cutting water and cutting waste during the process of singulation and improve the reliability.
- a semiconductor device includes a substrate, a semiconductor element having a piezoelectric conversion function mounted on at least one main surface of the substrate, and the semiconductor on the main surface of the substrate.
- a rib fixed around the element, a flat plate, a plate cap fixed to the rib so as to cover the semiconductor element, a through-hole formed in the substrate or the plate cap, and the through-hole
- a predetermined substance that fills and closes the through-hole, and the predetermined substance may have a property of opening the through-hole by spreading by heating.
- the through hole formed in the substrate or the plate cap is filled with a substance having a melting point lower than that of the solder, so that cutting waste and cutting water when dividing the semiconductor device into pieces are separated. There is no penetration into the penetration. Then, for example, the substance installed in the through hole is melted by the heat treatment after the division such as mounting on the mother substrate, and the through hole is opened by spreading around the through hole. As a result, it is possible to prevent the cutting water and the cutting waste from entering during the process of separating into individual pieces, thereby realizing a semiconductor device with improved reliability.
- the present invention it is possible to realize a semiconductor device that can prevent the intrusion of cutting water and cutting waste during the process of separating into individual pieces and improve the reliability.
- FIG. 1 is a cross-sectional view of the semiconductor device according to the first embodiment.
- FIG. 2 is a cross-sectional view of a mounting body on which the semiconductor device according to the first embodiment is mounted.
- FIG. 3 is a cross-sectional view of the semiconductor device according to the first modification of the first embodiment.
- FIG. 4 is a cross-sectional view of a mounting body on which the semiconductor device according to the first modification of the first embodiment is mounted.
- FIG. 5 is a cross-sectional view of the semiconductor device according to the second modification of the first embodiment.
- FIG. 6 is a cross-sectional view of a mounting body on which the semiconductor device according to the second modification of the first embodiment is mounted.
- FIG. 7 is a cross-sectional view of the semiconductor device according to the second embodiment.
- FIG. 8 is a cross-sectional view of the semiconductor device according to the third embodiment.
- FIG. 9 is a cross-sectional view of a mounting body on which the semiconductor device according to the third embodiment is mounted.
- FIG. 10 is a top view of the semiconductor device according to the fourth embodiment.
- FIG. 11 is a cross-sectional view of the semiconductor device according to the fourth embodiment.
- FIG. 12 is a cross-sectional view of the semiconductor device according to the fifth embodiment.
- FIG. 13 is a cross-sectional view of a mounting body on which the semiconductor device according to the fifth embodiment is mounted.
- FIG. 14 is a diagram for explaining the method of manufacturing the semiconductor device in the fifth embodiment.
- FIG. 15 is a cross-sectional view of a semiconductor device according to a modification of the fifth embodiment.
- FIG. 16 is a cross-sectional view of a mounting body on which a semiconductor device according to a modification of the fifth embodiment is mounted.
- FIG. 17 is an example of a cross-sectional view of a mounting body on which a semiconductor device having a substance that spreads in the through hole is mounted.
- FIG. 18 is a cross-sectional view showing a conventional semiconductor device.
- FIG. 1 is a cross-sectional view of the semiconductor device according to the first embodiment.
- the semiconductor device 100 includes a case 1, a semiconductor element 2, a semiconductor element 4, an adhesive 5, a substrate 6, and an electrode 7.
- the case 1 covers the semiconductor element 2 and the semiconductor element 4 fixed to the substrate 6, and is fixed to the substrate 6 with an adhesive 5.
- the shape of the portion connected to the substrate 6 via the adhesive 5 is bent in the same direction as the semiconductor element 2 or in the opposite direction.
- the case 1 may be made of any material having good heat resistance.
- it may be made of a metal such as Cu, Al, or Mg, and may be made of, for example, a plastic or ceramic nonmetal, and is not particularly limited.
- the material of case 1 consists of nonmetals, it is desirable that the surface is plated with Sn or Ni.
- the semiconductor element 2 is a semiconductor element having a piezoelectric conversion function, such as a MEMS microphone semiconductor element having a diaphragm structure 3 or a beam structure, and is fixed to the substrate 6.
- the semiconductor element 4 is a CMOS semiconductor element and is fixed to the substrate 6.
- the semiconductor element 4 is a CMOS semiconductor element used in, for example, an analog IC, a logic IC, a memory IC, etc., but is not particularly limited thereto.
- the adhesive 5 is an adhesive that fixes the case 1 to the substrate 6 and is made of any one of conductive epoxy, non-conductive epoxy, silver paste, silicon, urethane, acrylic, and solder paste, for example.
- the substrate 6 is a glass cloth laminated epoxy substrate (glass epoxy substrate), a glass cloth laminated polyimide substrate, an aramid nonwoven fabric substrate, or the like.
- the semiconductor element 2 and the semiconductor element 4 are fixed to the main surface, and the case 1 is fixed with an adhesive 5 so as to cover the fixed semiconductor element 2 and the semiconductor element 4. .
- the substrate 6 is provided with a through hole 10 that becomes a sound hole, for example, and a plating layer 8 is formed on the inner wall of the through hole 10 and the surface opposite to the main surface around the through hole 10.
- the substrate 6 has an electrode 7 formed on the surface opposite to the main surface.
- the plating layer 8 is formed in the vicinity of the through hole 10 on the side opposite to the inner wall of the through hole 10 and the main surface of the substrate 6.
- the plating layer 8 is, for example, Au / Ni, and preferably has a thickness of 1 ⁇ m or less and a Ni plating thickness of 15 ⁇ m or less.
- the electrode 7 is an electrode made of Cu, for example, and is formed on a surface opposite to the main surface (the surface on which the semiconductor element 2 and the semiconductor element 4 are fixed).
- the electrode 7 is preferably surface-treated with a water-soluble heat-resistant preflux or Au / Ni plating.
- the through hole 10 is formed in the substrate 6, and the surface of the substrate on which the electrode 7 is formed is filled with a filling material 9 having a thickness thinner than the substrate 6 and having a melting point of less than 220 ° C., and is closed. Yes.
- the filling material 9 is not limited to a material having a melting point of less than 220 ° C. For example, it may be below the melting point of solder, and may be a substance having a softening temperature of less than 220 ° C. or a volatilization temperature of less than 220 ° C., for example.
- the semiconductor device 100 is configured as described above.
- FIG. 2 is a cross-sectional view of a mounting body on which the semiconductor device according to the first embodiment is mounted. Elements similar to those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.
- the mother substrate 15 is a glass cloth laminated epoxy substrate (glass epoxy substrate), a glass cloth laminated polyimide substrate, an aramid nonwoven fabric substrate, or the like.
- a plurality of semiconductor devices 100 simultaneously formed on the mother substrate 15 are mounted through solder 14 after being divided individually by a dicing method or a processing method of cutting with a die.
- the filling substance 9 does not come into contact with the mother substrate 15 and spreads wet on the substrate 6 in the vicinity of the through hole 10. Thereby, the through hole 10 is opened and functions as a sound hole, for example.
- the through hole 10 was filled with a filling material 9 having a melting point less than 220 ° C. with a thickness smaller than the thickness of the substrate 6, and the through hole was closed (closed).
- the filler 9 is melted by the heat treatment of the solder 14 when the semiconductor device 100 is mounted on the mother substrate 15, and spreads on the substrate 6 in the vicinity of the through hole 10.
- the through hole 10 is opened and functions as a sound hole.
- the melting point of the filling material 9 is equal to or lower than the melting point of the solder 14.
- the semiconductor device 100 is mounted on the mother board 15 via the solder 14.
- a plurality of semiconductor devices 100 formed at the same time are individually divided, that is, separated into pieces by a dicing method or a processing method of cutting with a die, and then mounted on the mother substrate 15 via the solder 14.
- the through holes 10 provided in the substrate 6 are filled with the filling material 9 and closed, so that the cutting is performed. Debris does not enter the through hole 10. Therefore, it does not affect the vibration and sound quality of the diaphragm.
- the through-hole 10 exhibits a desired function because the filled material 9 that has been filled spreads out and a through-hole that functions as a sound hole is opened.
- the through holes 10 installed in the substrate 6 are filled with the filling material 9 and closed, so that the cutting water enters the through holes 10. It is possible to protect the diaphragm structure 3 without intruding. Further, after mounting, the through hole 10 exhibits a desired function because the through hole opens when the filling material 9 that has closed the through hole wets and spreads.
- the first embodiment it is possible to realize a semiconductor device that can prevent the intrusion of cutting water and cutting waste when performing the processing to be singulated and improve the reliability.
- the filling material 9 spreads wet during mounting, but as described above, the filling material 9 is not limited to wet spreading on the substrate in the vicinity of the through hole 10. It suffices if the wet substrate spreads without contacting the mother substrate 15 and the desired function can be exhibited by opening the through hole 10. For example, there may be some residue on the inner wall of the through hole 10.
- the filling substance 9 only needs to be made of a component different from that of the plating layer 8, and may be the same component as the solder 14.
- Modification 1 a semiconductor device 110 including a substrate of another mode from the semiconductor device 100 in Embodiment 1 is described.
- FIG. 3 is a cross-sectional view of the semiconductor device according to the first modification of the first embodiment.
- FIG. 4 is a cross-sectional view of a mounting body on which the semiconductor device according to the first modification of the first embodiment is mounted. Elements similar to those in FIG. 1 or 2 are denoted by the same reference numerals, and detailed description thereof is omitted.
- 3 and 4 differs from the semiconductor device 100 in that the substrate 6 has a recess 16.
- the concave portion 16 is a concave portion of the substrate provided in the vicinity of the through hole 10 on the surface opposite to the main surface of the substrate 6, that is, on the mounting surface side to the mother substrate 15.
- a plating layer 18 is formed in the recess 16.
- the plating layer 18 is formed in the recess 16 in the vicinity of the through hole 10 on the surface opposite to the inner wall of the through hole 10 and the main surface of the substrate 6.
- the through hole 10 is formed in the substrate 6. Similar to the first embodiment, the through hole 10 has a thickness smaller than the thickness of the substrate 6 on the mounting surface side to the mother substrate 15 at 220 ° C.
- the filling substance 9 having a melting point lower than that is filled and closed.
- the through hole 10 is filled with the filling material 9 with a thickness smaller than the thickness of the substrate 6, and the through hole is closed (closed). Due to the heat treatment of the solder 14 when mounted on the substrate 15, the filling material 9 is melted and wets and spreads into the recess 16 of the substrate 6 near the through hole 10. Thereby, the through hole 10 is opened.
- the filling substance 9 does not come into contact with the mother substrate 15 and spreads in the recess 16 of the substrate 6 in the vicinity of the through hole 10.
- the semiconductor device 110 is configured and mounted on the mother board 15 via the solder 14.
- the filling material 9 does not come into contact with the mother substrate 15 and easily wets and spreads in the recess 16.
- the hole 10 is opened.
- Modification 2 In the first embodiment and the first modification, the example of the semiconductor device 100 or 110 in which the through hole 10 is provided in the substrate 6 has been described, but the present invention is not limited thereto.
- Modification 2 an example of the semiconductor device 120 in which a through hole is provided in the case 1 will be described.
- FIG. 5 is a cross-sectional view of the semiconductor device according to the second modification of the first embodiment.
- FIG. 6 is a cross-sectional view of a mounting body on which the semiconductor device according to the second modification of the first embodiment is mounted. Elements similar to those in FIG. 1 or 2 are denoted by the same reference numerals, and detailed description thereof is omitted.
- the semiconductor device 120 shown in FIGS. 5 and 6 is different from the semiconductor device 100 in that the through hole 10 is formed in the substrate 6 whereas the through hole 11 is provided in the case 1.
- the case 1 has a through hole 11 and is surface-treated.
- the surface treatment in the vicinity of the through hole 11 of the case 1 is Au / Ni.
- the through hole 11 is formed in the case 1, and is filled with a filling material 19 with a thickness equal to or less than the thickness of the case 1 and closed.
- the through-hole 11 is filled with the filling material 19 and the through-hole is closed, but the solder 14 is heated when the semiconductor device 120 is mounted on the mother substrate 15. As a result, the filling material 19 melts and spreads around the through hole 11 of the case 1. In this way, the through hole 11 is opened.
- the filling material 19 does not contact the semiconductor element 2 and the semiconductor element 4 fixed to the substrate 6 and the semiconductor element 4, and spreads around the through hole 11 of the case 1. .
- the filling material 19 may have a melting point of 260 ° C. or less, for example, Sn—Ag—Cu, Sn—Ag, Sn—Pb, or Sn—Bi based solder. Further, the filling substance 19 may be the filling substance 9 described above. That is, the filling material 19 may be a material having a melting point of less than 220 ° C., a material having a softening temperature of less than 220 ° C., or a material having a volatilization temperature of less than 220 ° C. The material of the filling material 19 may be a material that is different from the main component of the case 1 or the main component of the surface plating of the case 1 and that melts, softens or volatilizes below the melting point of the solder.
- the semiconductor device 110 is configured and mounted on the mother board 15 via the solder 14.
- the filling material 19 is fixed to the substrate 6 and the substrate 6. And without contacting the semiconductor element 4, the case 1 can be wet and spread around the through hole 11, and the through hole 11 can be opened.
- Embodiment 2 In the first embodiment, the example in which the through hole formed in the semiconductor device is filled with a substance having a melting point lower than the melting point of the solder has been described, but the present invention is not limited thereto.
- Embodiment 2 an example in which a hygroscopic substance is installed in a through-hole formed in a semiconductor device will be described.
- FIG. 7 is a cross-sectional view of the semiconductor device according to the second embodiment. Elements similar to those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.
- the through-hole 10 is not filled with the filling substance 9, but the hygroscopic substance 22 having good hygroscopicity is installed.
- the through hole 10 is formed in the substrate 6, and a hygroscopic substance 22 having a good hygroscopic property is installed on the inner wall.
- the hygroscopic substance 22 is cut into the semiconductor device 200 during cutting processing. It is installed to prevent intrusion.
- the hygroscopic substance 22 is a substance having a high moisture absorption rate and a hygroscopic rate, for example, a substance made of a fiber material.
- the hygroscopic substance 22 is not limited to a substance made of a carbon material, but a substance made of any one of silicon dioxide (SiO 2 ), calcium oxide (CaO), alumina (Al 2 O 3 ), and calcium chloride (CaCl 2 ). It does not matter.
- the hygroscopic substance 22 does not block the through hole 10 even after being installed on the inner wall of the through hole 10. Further, the hygroscopic substance 22 maintains the open state without closing the through hole 10 even after the semiconductor device 200 absorbs moisture when the semiconductor device 200 is separated.
- the semiconductor device 200 is configured as described above.
- the hygroscopic substance 22 having good hygroscopicity is installed on the inner wall of the through hole 10 of the semiconductor device 200, cutting water or cutting waste does not enter the through hole 10.
- the diaphragm structure 3 can be protected.
- the through hole 10 has been described as being provided in the substrate 6, it is not limited thereto.
- the case 1 may be provided with the through hole 10, and in that case, the hygroscopic substance 22 may be installed on the inner wall of the through hole 10 of the case 1.
- Embodiment 3 In Embodiments 1 and 2, an example in which a through hole is formed in a substrate or a case of a semiconductor device has been described, but the present invention is not limited to this. Hereinafter, as Embodiment 3, an example of another aspect of the through hole formed in the semiconductor device will be described.
- FIG. 8 is a cross-sectional view of the semiconductor device according to the third embodiment.
- FIG. 9 is a cross-sectional view of a mounting body on which the semiconductor device according to the third embodiment is mounted. Elements similar to those in FIG. 1 or 2 are denoted by the same reference numerals, and detailed description thereof is omitted.
- the through hole 10 is formed in the substrate 6 in the semiconductor device 100, but the through hole is not formed in the substrate 6, and the case 1 and the substrate 6 are fixed.
- the difference is that a through-hole 38 is formed in the adhesive material 33 used for this.
- the case 1 and the substrate 6 are fixed by the adhesive substance 33.
- the adhesive substance 33 fixes the case 1 to the substrate 6 as shown in FIG. Further, the adhesive substance 33 has specific characteristics, and the case 1 is temporarily fixed to the substrate 6 before the semiconductor device 300 is mounted on the mother substrate 15, and the space formed by the case 1 and the substrate 6. To seal. As shown in FIG. 9, the adhesive substance 33 has a characteristic that a through-hole penetrating the inner side and the outer side of the space formed by the case 1 and the substrate 6 is formed by heat during mounting on the mother substrate 15. have. The through hole functions as the through hole 38.
- the adhesive substance 33 may be, for example, a solder paste in which many voids are generated, or may be a substance that becomes porous when heated.
- the through-hole 38 formed as a through-hole is formed in any part of the adhesive substance 33 that bonds the case 1 and the substrate 6. It does n’t matter if it ’s enough.
- the semiconductor device 300 is configured and mounted on the mother board 15 via the solder 14.
- the adhesive substance 33 as an adhesive for fixing the case 1 and the substrate 6, after the microphone semiconductor device 300 is mounted on the mother substrate 15, the adhesive substance 33 is heated.
- a through hole 38 is formed in the bottom. Accordingly, it is not necessary to provide a through hole in the substrate 6 or the case 1, so that the manufacturing cost can be reduced.
- FIG. 10 is a top view of the semiconductor device according to the fourth embodiment.
- FIG. 11 is a cross-sectional view of the semiconductor device according to the fourth embodiment.
- symbol is attached
- the semiconductor device 400 shown in FIG. 10 and FIG. 11 has a through hole 38 formed in the adhesive material 33 used for fixing the case 1 and the substrate 6 to the semiconductor device 300, whereas the notch 46 and the dam. 47 is formed in advance.
- the adhesive 5 is applied around a region on the substrate 6 on which the semiconductor element 2 having the diaphragm structure 3 and the semiconductor element 4 are mounted in order to fix the case 1 and the substrate 6. Is done.
- the adhesive 5 has one or a plurality of notches 46 where the adhesive is not applied to a part of the periphery of the region.
- the notch 46 is a part of the periphery of the region on the substrate 6 and is a region where the adhesive 5 is not applied.
- the dam 47 is a dam or a plurality of dams formed at a predetermined distance from the notch 46 in the adhesive 5 and having a size wider than the width of the notch 46.
- the dam 47 is formed between the semiconductor element 2 and the semiconductor element 4, and is, for example, between the notch 46 and the semiconductor element 2 or the semiconductor element 4 in the vicinity of the notch 46 on the substrate 6. It is formed.
- the area of the dam 47 is preferably larger than the cross-sectional area of the notch 46.
- the dam 47 may be formed of a resin component, or may have good hygroscopicity, for example, silicon dioxide (SiO 2 ), calcium oxide (CaO), alumina (Al 2 ) as an inorganic substance. O 3 ) and calcium chloride (CaCl 2 ) may be used.
- the semiconductor device 400 is configured.
- the case 1 is mounted on the substrate 6 and the case 1 is fixed to the substrate 6 by curing the adhesive 5 as shown in FIG.
- the notch 46 becomes a gap between the case 1 and the substrate 6 and penetrates the inside and outside of the space formed by the case 1 and the substrate 6.
- the gap formed by the notch 46 may be used as a sound hole (through hole). In that case, there is no need to provide a through hole in the case 1 and the substrate 6, so that the manufacturing cost can be reduced.
- the adhesive 5 for fixing the case 1 to the substrate 6 has a gap formed by the notch 46, but the dam 47 is formed at a certain distance from the gap. Therefore, it is possible to prevent the cutting water during dicing or the cutting waste during the die processing from entering.
- the case 1 shield cap
- the present invention is not limited to this.
- a rib and a plate cap may be used instead of the case 1, a rib and a plate cap may be used.
- the fifth embodiment an example in which a rib and a plate cap are used will be described.
- FIG. 12 is a cross-sectional view of the semiconductor device according to the fifth embodiment.
- FIG. 13 is a cross-sectional view of a mounting body on which the semiconductor device according to the fifth embodiment is mounted. Elements similar to those in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted.
- the rib 51 and the plate cap 53 cover the semiconductor element 2 and the semiconductor element 4 fixed to the substrate 6, and are fixed to the substrate 6 by the adhesive 5.
- the rib 51 is installed around the semiconductor element 2 and the semiconductor element 4 on the upper surface of the substrate 6, and is fixed to the substrate 6 with an adhesive 5.
- the plate cap 53 is a flat plate.
- the plate cap 53 is installed on the rib 51 so as to cover the semiconductor element 2 and the semiconductor element 4 fixed to the substrate 6, and is fixed to the rib 51 with an adhesive 52.
- the adhesive 5 and the adhesive 52 are cured by heat (thermosetting) after the rib 51 and the plate cap 53 are installed. Thereby, the adhesive 5 fixes the substrate 6 and the rib 51, and the adhesive 52 fixes the rib 51 and the plate cap 53.
- the semiconductor device 500 is configured as described above.
- the semiconductor device 500 is mounted on the mother substrate 15 via the solder 14, and the aspect of the mounting body on which the semiconductor device 500 is mounted is the same as in FIG. 2 and will be described. Is omitted.
- FIG. 14 is a diagram for explaining the method of manufacturing the semiconductor device in the fifth embodiment.
- a through hole 61 is provided in the substrate 6 (FIG. 14A), and the through hole 61 is filled with a substance having a melting point lower than that of solder.
- the semiconductor element 2 and the semiconductor element 4 having the diaphragm structure 3 formed separately are fixed to the substrate 6, the bonding pad 17 provided on the substrate 6 for connection to the electrode 7 to be formed later, the semiconductor element 2 and The semiconductor element 4 is electrically connected.
- ribs 51 are installed around the semiconductor elements 2 and 4 on the upper surface of the substrate 6 and the ribs 51 are fixed by the adhesive 5 (FIG. 14B).
- FIG. 14B an example in which a plurality of semiconductor elements 2 and semiconductor elements 4 are fixed to the substrate 6 is shown, and the ribs 51 are provided around the respective semiconductor elements 2 and 4.
- a plate cap 53 is placed on the rib 51 so as to cover the semiconductor element 2 and the semiconductor element 4 fixed to the substrate 6, and is fixed to the rib 51 with an adhesive 52. Then, by thermally curing the adhesive 5 and the adhesive 52, respectively, the substrate 6 and the rib 51 are fixed to the adhesive 5, and the rib 51 and the plate cap 53 are fixed to the adhesive 52 (FIG. 14 ( c)).
- the semiconductor device 500 is cut into individual pieces (FIG. 14E) by simultaneously cutting with a dicing blade or the like (FIG. 14D).
- the through-hole 61 provided in the substrate 6 is filled with a substance having a melting point lower than that of the solder, the cutting waste and cutting water when the semiconductor device 500 is divided to be separated into pieces are through-holes. There is no intrusion inside.
- the semiconductor device 500 is manufactured.
- the fifth embodiment it is possible to realize a semiconductor device that can prevent the penetration of cutting water and cutting waste when performing the processing to be separated into pieces and improve the reliability.
- FIG. 15 and FIG. 16 show a semiconductor device 520 in which the case 1 of the semiconductor device 120 in Modification 2 of Embodiment 1 is replaced with a rib 51 and a plate cap 53.
- FIG. 15 is a cross-sectional view of another aspect of the semiconductor device according to the fifth embodiment.
- 16 is a cross-sectional view of a mounting body on which the semiconductor device shown in FIG. 15 is mounted.
- 1, 2, 12, and 13 are denoted by the same reference numerals, and detailed description thereof is omitted.
- the through hole 61 is formed in the plate cap 53, and is filled with the filling material 19 with a thickness equal to or less than the thickness of the plate cap 53 and closed.
- the through hole 61 is filled with the filling material 19 to close the through hole, but the solder 14 is heated when the semiconductor device 520 is mounted on the mother substrate 15. As a result, the filling material 19 melts and spreads wet around the through hole 11 of the plate cap 53. In this way, the through hole 61 is opened.
- the plate cap 53 wets and spreads around the through-hole 61 without opening the through-hole 61.
- the semiconductor device of the present invention it is possible to realize a semiconductor device that can prevent the intrusion of cutting water and cutting waste when performing the processing for singulation and improve the reliability.
- the semiconductor device of the present invention includes a substrate, a semiconductor element having a piezoelectric conversion function mounted on at least one main surface of the substrate, and a cover that covers the semiconductor element fixed to the main surface of the substrate.
- a semiconductor device including a case to be formed, a through-hole formed in the substrate or the case, and a predetermined substance that fills the through-hole and closes the through-hole, wherein the predetermined substance is heated And has a characteristic of opening the through hole by spreading. Accordingly, it is possible to realize a semiconductor device that can prevent the penetration of cutting water and cutting waste when performing the process of dividing into individual pieces and improve the reliability.
- the present invention is not limited thereto. As shown in FIG. 17, it is good also as spreading in a through-hole. For example, it may be wet and spread on the inner wall of the through hole or the region of the main surface of the substrate in contact with the through hole.
- the predetermined substance is not limited to a substance that spreads out by heating, and may be the above-described hygroscopic substance.
- the hygroscopic substance may be provided on the inner wall of the through-hole or the region in contact with the through-hole on the main surface of the substrate as described above.
- the semiconductor device of the present invention has been described based on the embodiment.
- the present invention is not limited to this embodiment. Unless it deviates from the meaning of this invention, the form which carried out the various deformation
- a semiconductor mounting body in which the semiconductor device of the present invention is mounted on a mother substrate is also included in the scope of the present invention.
- the semiconductor mounting body constitutes, for example, a mobile phone, a DSC (Digital Still Camera), and the like.
- the present invention can be used for a semiconductor device, and in particular, an electret capacitor having a vibrating electrode or a semiconductor device having a diaphragm structure.
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Abstract
Description
図1は、実施の形態1における半導体装置の断面図である。
変形例1では、実施の形態1における半導体装置100と別の態様の基板を備える半導体装置110について説明する。
実施の形態1及び変形例1では、貫通孔10が基板6に設けられている半導体装置100または110の例について説明したが、それに限らない。変形例2では、貫通孔がケース1に設けられる半導体装置120の例について説明する。
実施の形態1では、半導体装置に形成された貫通孔にはんだの融点未満の融点を持つ物質が充填された場合の例について説明したが、それに限らない。以下、実施の形態2として、半導体装置に形成された貫通孔に吸湿性物質が設置された例を説明する。
実施の形態1及び2では、半導体装置の基板またはケースに貫通孔が形成された場合の例について説明したが、それに限らない。以下、実施の形態3として、半導体装置に形成される貫通孔の別の態様の例を説明する。
実施の形態4では、実施の形態3の別の態様として、接着剤の部分塗布により形成した欠き部を利用する例を説明する。
実施の形態1~4では、半導体装置の基板に固定されている半導体素子2と半導体素子4とをカバーするものとしてケース1(シールドキャップ)を例に挙げて説明したが、それに限らない。例えばケース1の代わりにリブと板キャップとを用いてもよい。以下、実施の形態5として、リブと板キャップとを用いる場合の例を説明する。
実施の形態5では、貫通孔10が基板6に設けられている半導体装置500の例について説明したが、それに限らない。同様に、実施の形態1~4いずれの半導体装置のケース1をリブ51及び板キャップ53に代えてもよい。
2、4 半導体素子
3 ダイアフラム構造
5、52、630 接着剤
6 基板
7 電極
8、18 めっき層
9、19 充填物質
10、11、38、61 貫通孔
14 はんだ
15 マザー基板
17 ボンディングパッド
22 吸湿性物質
33 接着物質
46 欠き部
47 ダム
51 リブ
53 板キャップ
100、110、120、200、300、400、500、520 半導体装置
600 シリコンコンデンサマイクロフォン
610 金属ケース
610a 第1音孔
620a 第2音孔
621 接続パターン
Claims (15)
- 基板と、
前記基板の主面に少なくとも1つ実装される圧電変換機能を有する半導体素子と、
前記基板の主面に固定され、前記半導体素子をカバーするケースと、
前記基板または前記ケースに形成された貫通孔と、
前記貫通孔に充填されて前記貫通孔を閉口する所定の物質とを備えた半導体装置であって、
前記所定の物質は、加熱により濡れ広がって前記貫通孔を開口する特性を有する
半導体装置。 - 基板と、
前記基板の主面に少なくとも1つ実装される圧電変換機能を有する半導体素子と、
前記基板の主面に固定され、前記半導体素子をカバーするケースと、
前記基板または前記ケースに形成された貫通孔と、
前記貫通孔または前記基板に濡れ広がって前記貫通孔を開口している所定の物質とを備え、
前記所定の物質は、加熱により、濡れ広がる特性を有している
半導体装置。 - 前記所定の物質は、220℃未満の融点、220℃未満の軟化温度または220℃未満の揮発温度をもつ
請求項1または2に記載の半導体装置。 - 前記貫通孔の内壁及び前記主面と反対側の面の前記貫通孔の周囲は、金属めっきが施されている
請求項1または2に記載の半導体装置。 - 前記基板は、前記主面と反対側の面の前記貫通孔の周囲に、当該基板の一部が凹んだ凹部が形成されている
請求項1または2に記載の半導体装置。 - 基板と、
前記基板の主面に少なくとも1つ実装される圧電変換機能を有する半導体素子と、
前記基板の主面に固定され、前記半導体素子をカバーするケースと、
前記基板または前記ケースに形成され、貫通孔とを備え、
前記貫通孔の内壁には、吸湿率性を有する吸湿物質が設置されている
半導体装置。 - 前記吸湿物質は、繊維素材、二酸化珪素(SiO2)、酸化カルシウム(CaO)、アルミナ(Al2O3)及び塩化カルシウム(CaCl2)のいずれかである
請求項6に記載の半導体装置。 - 基板と、
前記基板の主面に少なくとも1つ実装される圧電変換機能を有する半導体素子と、
前記基板の主面に固定され、前記半導体素子をカバーするケースと、
前記基板に塗布され、前記基板と前記カバーとを密着固定して前記半導体素子を密封する接着剤とを備え、
前記接着剤の一部は、加熱により、貫通される
半導体装置。 - 前記接着剤は、220℃未満の融点、220℃未満の軟化温度または220℃未満の揮発温度を持つ
請求項8に記載の半導体装置。 - 基板と、
前記基板の主面に少なくとも1つ実装される圧電変換機能を有する半導体素子と、
前記基板の主面に固定され、前記半導体素子をカバーするケースと、
前記半導体素子が実装されている前記主面の領域の周囲に塗布され、前記ケースと前記基板とを密着固定する接着剤と、
前記基板の主面に、前記半導体素子と前記接着剤との間に形成される前記接着剤の厚みより高いダムとを備え、
前記接着剤は、前記領域の周囲の一部に接着剤が塗布されない単数または複数の欠き部を有し、
前記ダムは、前記単数または複数の欠き部と前記半導体素子との間に形成され、
前記欠き部は、前記基板と前記ケースとが固定された後には貫通孔となる
半導体装置。 - 基板と、
前記基板の主面に少なくとも1つ実装される圧電変換機能を有する半導体素子と、
前記基板の主面に固定され、前記半導体素子をカバーするケースと、
前記基板または前記ケースに形成された貫通孔とを備え、
前記貫通孔は、内壁または当該内壁のうち前記基板の主面と反対側の内壁に、220℃未満の融点、220℃未満の軟化温度または220℃未満の揮発温度を持つ物質が環状に形成される
半導体装置。 - 基板と、
前記基板の主面に少なくとも1つ実装される圧電変換機能を有する半導体素子と、
前記基板の主面における前記半導体素子の周囲に固定されるリブと、
平面板であり、前記半導体素子を覆うように前記リブに固定される板キャップと、
前記基板または前記板キャップに形成された貫通孔と、
前記貫通孔に充填されて前記貫通孔を閉口する所定の物質とを備え、
前記所定の物質は、加熱により濡れ広がって前記貫通孔を開口する特性を有する
半導体装置。 - 前記半導体装置は、
前記基板の前記主面と反対側の面に形成されるマザー基板へ接続するため複数の電極を備え、
前記複数の電極を介して前記半導体装置の実装先であるマザー基板にはんだを用いて実装されている
請求項2、6、8、10、11または12に記載の半導体装置。 - 基板と、前記基板の主面に少なくとも1つ実装される圧電変換機能を有する半導体素子と、前記基板の主面に固定され、前記半導体素子をカバーするケースと、前記基板または前記ケースに形成され、貫通孔とを備え、前記貫通孔の内壁、または前記基板の主面の前記貫通孔と接する領域には、吸湿率性を有する吸湿物質または加熱により濡れ広がる物質を有する半導体装置と、
前記半導体装置をマザー基板に実装する接着物質と、
前記マザー基板とを備えた
半導体実装体。 - 基板と、前記基板の主面に少なくとも1つ実装される圧電変換機能を有する半導体素子と、前記基板の主面に固定され、前記半導体素子をカバーするケースと、前記基板または前記ケースに形成され、貫通孔とを備える半導体装置を形成する工程と、
前記半導体装置の前記貫通孔に、前記貫通孔を閉口する所定の物質を充填する工程と、
加熱により前記所定の物質を濡れ広がらせて前記貫通孔を開口する工程とを含む
製造方法。
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WO2005083764A1 (ja) * | 2004-02-27 | 2005-09-09 | Tokyo Electron Limited | 半導体装置の製造方法および半導体装置 |
JP2008271425A (ja) * | 2007-04-24 | 2008-11-06 | Matsushita Electric Works Ltd | 音響センサおよびその製造方法 |
JP2009028808A (ja) * | 2007-07-24 | 2009-02-12 | Rohm Co Ltd | Memsセンサおよびmemsセンサの製造方法 |
-
2010
- 2010-02-18 JP JP2011504721A patent/JPWO2010106733A1/ja active Pending
- 2010-02-18 CN CN2010800081051A patent/CN102318369A/zh active Pending
- 2010-02-18 WO PCT/JP2010/001015 patent/WO2010106733A1/ja active Application Filing
-
2011
- 2011-09-09 US US13/228,777 patent/US20120001275A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002016264A (ja) * | 2000-06-27 | 2002-01-18 | Denso Corp | 半導体装置およびその製造方法 |
WO2005083764A1 (ja) * | 2004-02-27 | 2005-09-09 | Tokyo Electron Limited | 半導体装置の製造方法および半導体装置 |
JP2008271425A (ja) * | 2007-04-24 | 2008-11-06 | Matsushita Electric Works Ltd | 音響センサおよびその製造方法 |
JP2009028808A (ja) * | 2007-07-24 | 2009-02-12 | Rohm Co Ltd | Memsセンサおよびmemsセンサの製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013085198A (ja) * | 2011-10-12 | 2013-05-09 | Funai Electric Co Ltd | マイクロホン装置、マイクロホン装置を備えた電子機器、マイクロホン装置の製造方法、マイクロホン装置用基板およびマイクロホン装置用基板の製造方法 |
JP2015012605A (ja) * | 2013-06-27 | 2015-01-19 | ビーエスイー カンパニー リミテッド | Memsマイクロホン |
Also Published As
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US20120001275A1 (en) | 2012-01-05 |
JPWO2010106733A1 (ja) | 2012-09-20 |
CN102318369A (zh) | 2012-01-11 |
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