WO2010095719A1 - 着色セラミック真空チャックおよびその製造方法 - Google Patents

着色セラミック真空チャックおよびその製造方法 Download PDF

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Publication number
WO2010095719A1
WO2010095719A1 PCT/JP2010/052553 JP2010052553W WO2010095719A1 WO 2010095719 A1 WO2010095719 A1 WO 2010095719A1 JP 2010052553 W JP2010052553 W JP 2010052553W WO 2010095719 A1 WO2010095719 A1 WO 2010095719A1
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Prior art keywords
vacuum chuck
oxide
spherical particles
weight
chuck according
Prior art date
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PCT/JP2010/052553
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English (en)
French (fr)
Inventor
鈴木茂美
石見嘉治
元矢秀和
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株式会社ソディック
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Publication date
Application filed by 株式会社ソディック filed Critical 株式会社ソディック
Priority to JP2011500662A priority Critical patent/JP4761334B2/ja
Priority to CN2010800065928A priority patent/CN102308379B/zh
Priority to KR1020117021919A priority patent/KR101168863B1/ko
Priority to US13/202,329 priority patent/US8899564B2/en
Publication of WO2010095719A1 publication Critical patent/WO2010095719A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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    • B65G2249/04—Arrangements of vacuum systems or suction cups
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    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/963—Surface properties, e.g. surface roughness
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9646—Optical properties
    • C04B2235/9661—Colour
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/11—Vacuum

Definitions

  • the present invention relates to an exposure apparatus that exposes a glass substrate in a process of manufacturing an FPD such as an LCD (liquid crystal display) or a PDP (plasma display).
  • an FPD such as an LCD (liquid crystal display) or a PDP (plasma display).
  • the present invention relates to a colored ceramic vacuum chuck on which a glass substrate is placed.
  • Incident light in the ultraviolet region used in the exposure process passes through the glass substrate and is reflected by the upper surface of the vacuum chuck. Since this reflected light causes uneven exposure, a low reflectance is required for the vacuum chuck.
  • the proportion of incident light that is reflected at the same angle as the incident angle is referred to as regular reflectance or specular reflectance. It is considered that the regular reflectance decreases as the surface roughness of the upper surface of the vacuum chuck increases.
  • Patent Documents 1-3 disclose a substrate holding device in which the upper surface of the vacuum chuck is roughened to reduce the regular reflectance. However, roughening may increase the diffuse reflectance.
  • the reflectance obtained by adding diffuse reflectance to regular reflectance is referred to as total reflectance or cumulative reflectance. In particular, recent LCD exposure apparatuses require low total reflectance.
  • the vacuum chuck is manufactured from black-anodized aluminum or ceramics.
  • Patent Document 4 states that the total reflectance of aluminum treated with black alumite is 6 to 8% at a light wavelength of 200 to 650 nm.
  • the blackened thin film may be worn or peeled off by repeated chucking of the glass substrate.
  • finishing the vacuum chuck material after the black alumite treatment has a limit from the viewpoint of protecting the blackened thin film.
  • Patent Document 5 discloses a colored alumina ceramic suitable for a support for a large metric substrate.
  • the disclosed preferred colored ceramic has a regular reflectance of 0.6 to 0.9% at a light wavelength of 220 to 350 nm, and a total reflectance of 10.3 to 22.5% at a light wavelength of 220 to 350 nm.
  • a large number of convex pins for supporting the glass substrate are formed in the vacuum chuck in order to reduce the area where the vacuum chuck contacts the glass substrate.
  • Several suction holes communicating with the vacuum source are opened in the non-contact surface of the vacuum chuck.
  • the space formed between the non-contact surface and the glass substrate is separated by a convex rim.
  • the rim is also called a bank or a bank.
  • the suction hole and most of the pins are surrounded by a rim.
  • the rim usually has almost the same height as the pin.
  • the pins and rims are formed by shot blasting following the formation of the mask pattern.
  • Hard abrasive grains are used for shot blasting.
  • the total reflectance is different between the concave portion and the convex portion thus formed. Even in the same convex portion, the total reflectance of the rim is slightly higher than that of the pin due to the difference in the area ratio of the convex portion to the peripheral concave portion.
  • An object of the present invention is to provide a low-reflectance vacuum chuck that supports a large glass substrate of about 1 square meter. Therefore, the vacuum chuck is manufactured from a colored ceramic sintered body having a high Young's modulus. Another object of the present invention is that the total reflectivity is sufficiently low even without forming a colored film. In particular, the aluminum vacuum chuck treated with black alumite is sufficiently competitive in terms of the total reflectivity. A colored ceramic vacuum chuck is provided. Furthermore, another object of the present invention is to provide a colored ceramic vacuum chuck in which the total reflectance of the mounting surface on which the pins and rims are formed is uniform.
  • the ceramic vacuum chuck for adsorbing the substrate on the upper surface has at least 3 wt% converted to 55 to 75 wt% alumina (Al 2 O 3 ) and oxide (SiO 2 ).
  • Si at least 0.4 wt% Ca in terms of oxide (CaO), at least 0.4 wt% Mg in terms of oxide (MgO), a colorant, and 1% or less
  • a plurality of pins that comprise a colored ceramic sintered body containing impurities, a rim that at least partially surrounds the plurality of pins that support the substrate, are formed on the upper surface by shot blasting with abrasive grains, and shot peening with spherical particles is performed as described above. It is characterized by being applied to the entire top surface.
  • the ceramic vacuum chuck of the present invention has a Young's modulus of 200 GPa or more.
  • the ceramic vacuum chuck of the present invention has a total reflectance of 7% or less at a light wavelength of 360 nm when light is irradiated on the upper surface.
  • the colorant may be any one selected from Fe, Mn, Co, Ti and Cr.
  • the colorant contains 2 to 20% by weight of Fe in terms of oxide (Fe 2 O 3 ).
  • Shot peening with spherical particles forms a large number of minute dents on the upper surface of the vacuum chuck material.
  • the spherical particles are preferably glass beads, particularly glass beads having an average particle diameter of 10 to 25 ⁇ m.
  • the spherical particles may be any particles having a particle size smaller than that of the abrasive particles.
  • a method of manufacturing a vacuum chuck includes 55 to 75% by weight or more of alumina (Al 2 O 3 ), a sintering aid, a colorant, and 1% or less of impurities. Sintering the raw material at 1200 to 1450 ° C.
  • a ceramic sintered body having a flat upper surface, polishing the upper surface, and alumina, silicon carbide, silicon nitride or zirconia with a mask pattern formed Subjecting the upper surface to shot blasting with abrasive grains containing as a main component to form a large number of pins and a rim that at least partially surrounds the large number of pins, and applying shot peening with glass beads to the upper surface and total reflection thereof Reducing the rate to 7% or less at a light wavelength of 360 nm.
  • the ceramic vacuum chuck has a sufficient Young's modulus and can support a large substrate of about 1 square meter.
  • the pin and rim are formed by shot blasting with abrasive grains on the upper surface of the colored ceramic sintered body, shot peening with spherical particles is performed, so that the total reflectance of the upper surface becomes uniform. If the spherical particles are glass beads, shot peening further reduces the total reflectance of the upper surface of the colored ceramic sintered body. As a result, the colored ceramic vacuum chuck of the present invention has a long life.
  • FIGS. A large number of pins 4 that support the glass substrate are formed on the upper surface of the vacuum chuck 2.
  • the glass substrate is in contact with the flat top surface of the pins 4.
  • a convex rim 6 that at least partially surrounds a large number of pins 4 is formed on the upper surface of the vacuum chuck 2.
  • the rim 6 has a rectangular shape along the contour of the vacuum chuck 2 and has the same or almost the same height as the pin 4.
  • Several suction holes (not shown) communicating with the vacuum source are opened in the non-contact surface 8 that does not contact the substrate.
  • the ceramic vacuum chuck 2 is formed from a colored ceramic sintered body mainly composed of alumina. If the alumina ratio in the colored ceramic sintered body is less than 55% by weight, it is difficult to manufacture the vacuum chuck 2 having a sufficient Young's modulus. Sufficient Young's modulus is such that the vacuum chuck 2 supports a large substrate of about 1 square meter, specifically 200 GPa or more. On the other hand, when the ratio of alumina contained in the colored ceramic sintered body is larger than 75% by weight, the ratio of the sintering aid and the colorant becomes small and the ceramic sintered body does not exhibit a dark color.
  • the colored ceramic sintered body preferably contains 3 to 12% by weight of Si in terms of oxide (SiO 2 ).
  • the colored ceramic sintered body may contain at least 0.4 wt% Ca in terms of oxide (CaO) and at least 0.4 wt% Mg in terms of oxide (MgO). desirable. If the sintering aid is less than the desired range, the sintering temperature will increase.
  • the colorant contained in the colored ceramic sintered body is selected from Fe, Mn, Co, Ti, and Cr.
  • a colorant containing 2 to 20% by weight of Fe in terms of oxide (Fe 2 O 3 ) contributes to a decrease in regular reflectance.
  • the ceramic raw material is sintered at a temperature of 1200 to 1450 ° C.
  • the sintering furnace may be an electric furnace or a highly productive LPG furnace.
  • the abrasive grains are hard abrasive grains that can scrape the alumina ceramic sintered body.
  • the hard abrasive grains of shot blast are mainly composed of alumina (Al 2 O 3 ), silicon carbide (SiC), silicon nitride (Si 3 N 4 ) or zirconia (ZrO 2 ).
  • the abrasive grains are, for example, green carborundum (GC) and white alundum (WC).
  • the ceramic vacuum chuck of the present invention is required to perform shot peening on the upper surface of the colored ceramic sintered body. Shot peening with fine spherical particles reduces the difference in total reflectivity at the pin 4, rim 6 and non-contact surface 8.
  • the spherical particles used in shot peening are preferably glass beads. Moreover, shot peening with glass beads further reduces the total reflectance of the upper surface of the colored ceramic sintered body by about 1%. As a result, the total reflectance of the upper surface of the colored ceramic sintered body is 7% or less at a light wavelength of 360 nm. Even when shot peening with glass beads was applied to the white ceramic sintered body, the total reflectance was not lowered.
  • Table 1 shows a sample of a colored ceramic sintered body. The constituent elements of the sample are converted to oxides. The production of a colored ceramic sintered body sample will be described below. First, manganese dioxide (MnO 2 ), iron oxide (Fe 2 O 3 ), meteorite or clay, dolomite (MgCO 3 ⁇ CaCO 3 ), calcite (CaCO 3 ), magnesite (MgCO 3 ), chromium oxide (Cr 2 O 3 ) and titanium oxide (TiO 2 ) powder were weighed and mixed with alumina (Al 2 O 3 ) powder as a main component. Next, the slurry was produced
  • the slurry was dried by a spray drying method to produce raw material granules.
  • the raw material granules were press-molded and then sintered at a temperature of 1300 to 1450 ° C. in an electric furnace. In this way, two samples of different sizes were produced for each sample number. Although not shown in Table 1, cracks occurred in the sample having an alumina content of 47% by weight or less.
  • the colored ceramic sintered body is composed of alumina (Al 2 O 3 ) crystals, spinel crystals, anorthite (CaO ⁇ Al 2 O 3 ⁇ 2SiO 2 ) crystals, and other trace amounts of crystal phases.
  • Spinel crystals include Mn—Al spinel (MnO.Al 2 O 3 ) crystal, Mg—Fe spinel (MgFe 3+ 2 O 4 ) crystal, Mn—Mg—Fe—Al (MnO.MgFe 3+ 2 O 4 .Al 2 O 3 ) any of spinel crystals.
  • the spinel crystal has a reddish brown color, black color or blackish brown color and absorbs light to reduce the total reflectance.
  • the Young's modulus (GPa) in Table 1 was measured by the resonance method defined in JIS R1602.
  • the specific gravity in Table 1 is a bulk specific gravity obtained by measuring a sample of ⁇ 30 mm ⁇ t20 mm by the Archimedes method. Examples of the present invention will be described below.
  • Example 1 The flat upper and lower surfaces of Sample 1 were polished with a diamond grindstone having a particle size of 325 until the thickness became 30 mm, and then washed. The surface roughness of the polished surface of Sample 1 was 1.0 to 1.6 ⁇ mRa. The polished surface of Sample 1 had a total reflectance in the range of 6 to 10% and a regular reflectance in the range of 0.4 to 0.7% at a light wavelength of 360 nm. Next, a mask pattern corresponding to a large number of pins 4 and rims 6 was formed on the polished surface of Sample 1, and Sample 1 was subjected to shot blasting with alumina abrasive grains. The surface roughness of the non-contact surface 8 of the sample 1 was 2 to 5 ⁇ mRa.
  • the non-contact surface 8 of the sample 1 had a total reflectance exceeding 7% at a light wavelength of 360 nm.
  • the total reflectance of the non-contact surface 8 is about 1% higher than that of the pin 4 by shot blasting of alumina abrasive grains.
  • the total reflectance of the rim 6 was about 1% higher than that of the pin 4 although it depends on the size of the pin 4 and the rim 6.
  • shot peening with spherical particles was performed on the upper surface of the sample 1.
  • the spherical particles were # 1200 glass beads and the average particle size was 10-25 ⁇ m. When observed with an electron microscope, a large number of spherical dents were overlapped and formed on the upper surface of the sample 1.
  • the size of the spherical dent was the same as that of the spherical particles.
  • the non-contact surface 8 of the sample 1 had a total reflectance of 6.1 to 6.5% and 7% or less at a light wavelength of 360 nm. The difference in total reflectance at the pin 4, the rim 6 and the non-contact surface 8 was within 0.5%.
  • Example 2 The flat upper and lower surfaces of Sample 2 were polished with a diamond grindstone having a particle size of 140 until the thickness became 30 mm, and then washed. The surface roughness of the polished surface of Sample 2 was 0.8 to 0.9 ⁇ mRa. The polished surface of Sample 2 had a total reflectance of 8.7 to 8.8% exceeding 7% at a light wavelength of 360 nm. The regular reflectance was 0.1 to 0.2% at a light wavelength of 360 nm. Next, shot blasting with silicon carbide abrasive grains having a grain size of No. 400 was performed on the sample 2 (by this shot blasting, the surface of the sample 2 became a surface corresponding to the non-contact surface 8 of Example 1).
  • the surface roughness increased to 1.4 to 1.5 ⁇ mRa.
  • the total reflectivity increased to 8.9 to 9.0% at a light wavelength of 360 nm.
  • the regular reflectance was 0.1% or less at a light wavelength of 360 nm.
  • shot peening with spherical particles was performed on the upper surface of Sample 2.
  • the spherical particles were glass beads, and shot peening was performed 8 times under the conditions shown in Table 2. When observed with an electron microscope, a large number of spherical dents were overlapped and formed on the upper surface of the sample 2.
  • the size of the spherical dent was the same as that of the spherical particles.
  • the surface roughness was larger than that immediately after polishing (before shot blasting), but slightly smaller than that after shot blasting.
  • the total reflectance was 6.5 to 6.6% and 7% or less at a light wavelength of 360 nm.
  • the regular reflectance was 0.1% or less at a light wavelength of 360 nm.
  • Example 3 The flat upper and lower surfaces of Sample 2 were polished with a diamond grindstone having a particle size of 325 until the thickness became 30 mm, and then washed.
  • the surface roughness of the polished surface of Sample 2 was 0.5 to 0.6 ⁇ mRa.
  • the polished surface of Sample 2 had a total reflectance of 8.0 to 8.1% exceeding 7% at a light wavelength of 360 nm.
  • the regular reflectance was 0.2 to 0.3% at a light wavelength of 360 nm.
  • shot peening with spherical particles was performed on the polished surface of sample 2 (the surface corresponding to pin 4 and rim 6 of Example 1).
  • the spherical particles were glass beads, and shot peening was performed 4 times under the conditions shown in Table 2.
  • the size of the spherical dent was the same as that of the spherical particles.
  • the surface roughness increased to 0.7 to 0.8 ⁇ mRa.
  • the total reflectance was 6.6 to 6.8%, which is 7% or less, at a light wavelength of 360 nm.
  • the regular reflectance was 0.1% or less at a light wavelength of 360 nm.
  • Example 4 The polished surface of Sample 2 of Example 3 was further subjected to shot peening with glass beads four times under the conditions shown in Table 2.
  • the surface roughness was 0.9 to 1.0 ⁇ mRa, which was larger than that of Example 3.
  • the total reflectivity was 6.2 to 6.3% at a light wavelength of 360 nm, which was further reduced as compared with Example 3.
  • the regular reflectance was 0.1% or less at a light wavelength of 360 nm.
  • Example 5 The flat upper and lower surfaces of Sample 2 were polished with a diamond grindstone having a particle size of 325 until the thickness became 30 mm, and then hand lapping was performed using a lapping solution containing diamond having a particle size of 3 ⁇ m.
  • the surface roughness of the lap surface of Sample 2 was 0.2 to 0.3 ⁇ mRa.
  • the lapped surface of Sample 2 had a total reflectance of about 7.1% and slightly over 7% at a light wavelength of 360 nm.
  • the regular reflectance was 0.9 to 1.0% at a light wavelength of 360 nm.
  • shot peening with spherical particles was performed on the lapping surface of Sample 2.
  • the spherical particles were glass beads, and shot peening was performed 8 times under the conditions shown in Table 2.
  • the size of the spherical dent was the same as that of the spherical particles.
  • the surface roughness increased to 0.6 to 0.7 ⁇ mRa.
  • the total reflectance was 6.4 to 6.6% and 7% or less at a light wavelength of 360 nm.
  • the regular reflectance was 0.4 to 0.5% at a light wavelength of 360 nm.

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Abstract

本発明において、載置面に基板を吸着する着色セラミック真空チャック２は、５５～７５重量％以上のアルミナ（Ａｌ2Ｏ3）と、酸化物（ＳｉＯ2）に換算して少なくとも３重量％のＳｉと、酸化物（ＣａＯ）に換算して少なくとも０．４重量％のＣａと、酸化物（ＭｇＯ）に換算して少なくとも０．４重量％のＭｇと、着色剤と、１％以下の不純物を含む着色セラミック焼結体から成り、基板を支持する多数のピン４とリム６が砥粒によるショットブラストにより載置面に形成され、球形粒子によるショットピーニングが載置面全体に施される。

Description

着色セラミック真空チャックおよびその製造方法
本発明は、ＬＣＤ（液晶ディスプレイ）、ＰＤＰ（プラズマディスプレイ）等のＦＰＤを製造するプロセスにおいてガラス基板を露光する露光装置に関する。特に、本発明は、ガラス基板を載置する着色セラミック真空チャックに関する。
露光プロセスで使用される紫外線領域の入射光はガラス基板を透過してしまい、真空チャック上面で反射してしまう。この反射光は露光ムラを引き起こしてしまうため、低い反射率が真空チャックに求められる。入射光のうち入射角と同じ角度で反射する光の比率を正反射率、あるいは鏡面反射率という。真空チャック上面の面粗さが大きくなると正反射率は小さくなると考えられている。特許文献１－３は真空チャック上面を粗面化して正反射率を低下させた基板保持装置を開示している。しかしながら、粗面化は拡散反射率をより大きくすることがある。正反射率に拡散反射率を加えた反射率は全反射率、又は累積反射率と呼ばれる。特に、近年のＬＣＤ用の露光装置は、低い全反射率を求めている。
一般に、真空チャックは、黒色アルマイト処理されたアルミニウム、又はセラミックスから製作される。特許文献４は黒色アルマイト処理されたアルミニウムの全反射率が２００ｎｍ～６５０ｎｍの光波長において６～８％であると述べている。しかし、黒色化薄膜は、ガラス基板のチャッキングの繰り返しによって、摩滅あるいは剥離することがある。また、黒色アルマイト処理の後に真空チャック材料を仕上げ加工することは、黒色化薄膜の保護の点から、限界がある。さらに、黒色化薄膜を大型の真空チャックに均一に形成することは容易ではない。
特許文献５はメートルサイズの大型基板の支持台に好適な着色アルミナセラミックスを開示している。開示された好適な着色セラミックスの正反射率は２２０～３５０ｎｍの光波長において０．６～０．９％、全反射率は２２０～３５０ｎｍの光波長において１０．３～２２．５％である。
多くの場合、真空チャックがガラス基板と接触する面積を小さくするためガラス基板を支持する多数の凸状のピンが真空チャックに形成されている。真空源に連通するいくつかの吸引孔が真空チャックの非接触面に開口している。吸引効率を向上するため、非接触面とガラス基板との間に形成される空間は凸状のリムによって区切られている。リムは土手あるいは縁堤とも呼ばれている。吸引孔とほとんどのピンはリムによって囲まれている。リムは通常ピンとほぼ同じ高さをもつ。
通常、ピンおよびリムは、マスクパターンの形成に続くショットブラストにより形成される。アルミナ（Ａｌ2Ｏ3）、炭化珪素（ＳｉＣ）、窒化珪素（Ｓｉ3Ｎ4）又はジルコニア（ＺｒＯ2）を主成分とする、例えばグリーンカーボランダム（ＧＣ）、ホワイトアランダム（ＷＣ）等の硬質砥粒が、ショットブラストに使用される。こうして形成された凹部と凸部では全反射率が異なってしまう。また、同じ凸部でも、周辺の凹部に対する凸部の面積比率の差によって、リムの全反射率はピンよりもわずかに高くなってしまう。
特開２００５－３３２９１０号公報 特開２００５－１０９０９１号公報 特許３０９５５１４号公報 特開２００６－２１０５４６号公報 特開２００４－０９９４１３号公報
本発明の目的は、１平方メートル程度の大型のガラス基板を支持する低反射率の真空チャックを提供することである。そのため、真空チャックはヤング率の高い着色セラミックス焼結体から製作される。また、本発明の他の目的は、着色被膜を形成しなくても全反射率が十分に低い、特に、全反射率の点で黒色アルマイト処理されたアルミニウム製の真空チャックと十分な競争力を持つ着色セラミック真空チャックを提供することである。さらに、本発明の他の目的は、ピンおよびリムが形成された載置面の全反射率が均一である着色セラミック真空チャックを提供することである。
本発明の一側面によれば、上面に基板を吸着するセラミック真空チャックは、５５～７５重量％以上のアルミナ（Ａｌ2Ｏ3）と、酸化物（ＳｉＯ2）に換算して少なくとも３重量％のＳｉと、酸化物（ＣａＯ）に換算して少なくとも０．４重量％のＣａと、酸化物（ＭｇＯ）に換算して少なくとも０．４重量％のＭｇと、着色剤と、１％以下の不純物を含む着色セラミック焼結体から成り、前記基板を支持する多数のピンと前記多数のピンを少なくとも部分的に囲むリムが砥粒によるショットブラストにより前記上面に形成され、球形粒子によるショットピーニングが前記上面全体に施されたことを特徴とする。
本発明のセラミック真空チャックはヤング率が２００ＧＰａ以上である。また、本発明のセラミック真空チャックは、上面に光が照射されたとき全反射率が３６０ｎｍの光波長において７％以下である。
着色剤は、Ｆｅ、Ｍｎ、Ｃｏ、ＴｉおよびＣｒの中から選ばれるものであればよい。好ましくは、着色剤は、酸化物（Ｆｅ2Ｏ3）に換算して２～２０重量％のＦｅを含む。
球形粒子によるショットピーニングは真空チャック材料の上面に多数の微小な打痕を形成する。球形粒子はガラスビーズ、特に平均粒径が１０～２５μｍのガラスビーズであることが好ましい。また、球形粒子は砥粒よりも小さい粒度を有するものであればよい。
本発明の他の側面によれば、真空チャックの製造方法は、５５～７５重量％以上のアルミナ（Ａｌ2Ｏ3）と、焼結助剤と、着色剤と、１％以下の不純物を含む原料を１２００～１４５０℃で焼結して平坦な上面を有するセラミック焼結体を生成するステップと、前記上面を研磨するステップと、マスクパターンを形成した状態でアルミナ、炭化珪素、窒化珪素又はジルコニアを主成分とする砥粒によるショットブラストを前記上面に施して多数のピンと前記多数のピンを少なくとも部分的に囲むリムを形成するステップと、ガラスビーズによるショットピーニングを前記上面に施してその全反射率を３６０ｎｍの光波長において７％以下へ低下させるステップを含む。
本発明によれば、セラミック真空チャックは十分なヤング率を有し１平方メートル程度の大型の基板を支持することができる。加えて、着色セラミック焼結体の上面に砥粒によるショットブラストによりピンおよびリムを形成した後に球形粒子によるショットピーニングを施すので、上面の全反射率が均一になる。また、球形粒子をガラスビーズとすると、ショットピーニングは着色セラミック焼結体の上面の全反射率を更に低下させる。その結果、本発明の着色セラミック真空チャックは、寿命が長くなる。
本発明のセラミック真空チャックを示す平面図である。 本発明のセラミック真空チャックを示す断面図ある。
図１および２を参照して本発明のセラミック真空チャックの一実施例を説明する。ガラス基板を支持する多数のピン４が真空チャック２の上面に形成されている。ガラス基板はピン４の平坦な頂面と接触する。さらに、多数のピン４を少なくとも部分的に囲む凸状のリム６が真空チャック２の上面に形成されている。リム６は真空チャック２の輪郭に沿った矩形を有し、ピン４と同一かほぼ同じ高さを有する。真空源に連通するいくつかの吸引孔（図示しない）が、基板と接触することのない非接触面８に開口している。
セラミック真空チャック２は、アルミナを主成分とする着色セラミック焼結体から形成される。着色セラミック焼結体中のアルミナの比率が５５重量％より小さいと、十分なヤング率をもつ真空チャック２を製造することが困難となる。十分なヤング率は、真空チャック２が１平方メートル程度の大型の基板を支持する程度であり、具体的には２００ＧＰａ以上である。また、着色セラミック焼結体中に含まれるアルミナの比率が７５重量％より大きいと、焼結助剤と着色剤の比率が小さくなってしまいセラミック焼結体が暗い色を呈しなくなる。
着色セラミック焼結体は、酸化物（ＳｉＯ2）に換算して３～１２重量％のＳｉを含むことが望ましい。また、着色セラミック焼結体は、酸化物（ＣａＯ）に換算して少なくとも０．４重量％のＣａと、酸化物（ＭｇＯ）に換算して少なくとも０．４重量％のＭｇとを含むことが望ましい。焼結助剤が望ましい範囲よりも少なすぎると焼結温度が高くなってしまう。
着色セラミック焼結体が含む着色剤は、Ｆｅ、Ｍｎ、Ｃｏ、ＴｉおよびＣｒの中から選ばれる。酸化物（Ｆｅ2Ｏ3）に換算して２～２０重量％のＦｅを含む着色剤は、正反射率の低下に貢献する。セラミック原料は１２００～１４５０℃の温度で焼結される。焼結炉は電気炉、又は生産性の高いＬＰＧ炉であってもよい。
多数のピン４とリム６に相当するマスクパターンが着色セラミック焼結体に形成される。続いて、砥粒によるショットブラストが着色セラミック焼結体に施される。砥粒はアルミナセラミック焼結体を削ることのできる硬質砥粒である。ショットブラストの硬質砥粒は、アルミナ（Ａｌ2Ｏ3）、炭化珪素（ＳｉＣ）、窒化珪素（Ｓｉ3Ｎ4）又はジルコニア（ＺｒＯ2）を主成分とする。砥粒は例えばグリーンカーボランダム（ＧＣ）、ホワイトアランダム（ＷＣ）である。
本発明のセラミック真空チャックは、ショットピーニングを着色セラミック焼結体の上面に施すことを要件とする。微小な球形粒子によるショットピーニングは、ピン４、リム６および非接触面８における全反射率の差を減少させる。ショットピーニングで使用する球形粒子はガラスビーズが好適である。また、ガラスビーズによるショットピーニングは、着色セラミック焼結体の上面の全反射率を更に１％程度低下させる。その結果、着色セラミック焼結体の上面の全反射率は３６０ｎｍの光波長において７％以下となる。なお、ガラスビーズによるショットピーニングを白色セラミック焼結体に施してもその全反射率が低下することはなかった。
表１は着色セラミック焼結体の試料を示している。試料の成分元素は酸化物に換算されている。着色セラミック焼結体の試料の製作を以下に説明する。まず、二酸化マンガン（ＭｎＯ2）、酸化鉄（Ｆｅ2Ｏ3）、硅石又は粘土、ドロマイト（ＭｇＣＯ3・ＣａＣＯ3）、カルサイト（ＣａＣＯ3）、及びマグネサイト（ＭｇＣＯ3）、酸化クロム（Ｃｒ2Ｏ3）、酸化チタン（ＴｉＯ2）の粉末が、秤量後、主成分であるアルミナ（Ａｌ2Ｏ3）粉末に混合された。次に、原料粉末を湿式粉砕することによりスラリィが生成された。スラリィはスプレードライ法によって乾燥され、原料顆粒が生成された。原料顆粒はプレス成形された後、電気炉にて１３００～１４５０℃の温度で焼結された。こうして各試料番号について、サイズの異なる２個の試料が製作された。なお、表１中には示されていないが、アルミナの含有量が４７重量％以下である試料はクラックが発生してしまった。
Figure JPOXMLDOC01-appb-T000001
試料の破片が乳鉢で粉砕され、結晶相の分析がＸ線回折装置にて行われた。その結果、着色セラミック焼結体は、アルミナ（Ａｌ2Ｏ3）結晶と、スピネル結晶と、アノーサイト（ＣａＯ・Ａｌ2Ｏ3・２ＳｉＯ2）結晶と、他の微量な結晶相から成っている。スピネル結晶は、Ｍｎ－Ａｌスピネル（ＭｎＯ・Ａｌ2Ｏ3）結晶、Ｍｇ－Ｆｅスピネル（ＭｇＦｅ3+ 2Ｏ4）結晶、Ｍｎ－Ｍｇ－Ｆｅ－Ａｌ（ＭｎＯ・ＭｇＦｅ3+ 2Ｏ4・Ａｌ2Ｏ3）スピネル結晶のいずれかである。スピネル結晶は赤褐色、黒色又は黒褐色を呈し、光を吸収して全反射率を低下させる。
表１中のヤング率（ＧＰａ）はＪＩＳのＲ１６０２に定められた共振法により測定された。表１中の比重は、□３０ｍｍ×ｔ２０ｍｍの試料をアルキメデス法により測定した嵩比重である。以下に本発明の実施例について説明する。
〔実施例１〕
試料１の平坦な上下面を粒度３２５番のダイヤモンド砥石で厚さが３０ｍｍになるまで研磨された後に洗浄した。試料１の研磨面の表面粗さは１．０～１．６μｍＲａであった。試料１の研磨面は、３６０ｎｍの光波長において全反射率が６～１０％の範囲、正反射率が０．４～０．７％の範囲であった。
次いで、試料１の研磨面に多数のピン４とリム６に相当するマスクパターンを形成し、アルミナ砥粒によるショットブラストを試料１に施した。試料１の非接触面８の表面粗さは２～５μｍＲａであった。試料１の非接触面８は、３６０ｎｍの光波長において全反射率が７％を超えていた。アルミナ砥粒のショットブラストにより非接触面８の全反射率はピン４よりも１％程度高くなった。また、リム６の全反射率は、ピン４およびリム６のサイズにもよるが、ピン４よりも１％程度高くなった。
続いて、試料１の上面に球形粒子によるショットピーニングを施した。球形粒子は＃１２００のガラスビーズであり、平均粒径は１０～２５μｍとした。電子顕微鏡で観察したところ、多数の球形打痕が重なって試料１の上面に形成されていた。球形打痕のサイズは球形粒子と同様であった。試料１の非接触面８は、３６０ｎｍの光波長において全反射率が６．１～６．５％と７％以下であった。ピン４、リム６および非接触面８における全反射率の差は０．５％以内であった。
〔実施例２〕
試料２の平坦な上下面を粒度１４０番のダイヤモンド砥石で厚さが３０ｍｍになるまで研磨した後に洗浄した。試料２の研磨面の表面粗さは０．８～０．９μｍＲａであった。試料２の研磨面は、３６０ｎｍの光波長において全反射率が８．７～８．８％と７％を超えていた。正反射率は３６０ｎｍの光波長において０．１～０．２％であった。
次いで、粒度４００番の炭化珪素砥粒によるショットブラストを試料２に施した（このショットブラストにより、試料２の表面が実施例１の非接触面８に相当する面となる）。表面粗さは１．４～１．５μｍＲａと大きくなった。全反射率は３６０ｎｍの光波長において８．９～９．０％と上昇した。正反射率は３６０ｎｍの光波長において０．１％以下であった。
続いて、試料２の上面に球形粒子によるショットピーニングを施した。球形粒子はガラスビーズとし、表２の条件でショットピーニングを８回施した。電子顕微鏡で観察したところ、多数の球形打痕が重なって試料２の上面に形成されていた。球形打痕のサイズは球形粒子と同様であった。表面粗さは、研磨直後（ショットブラスト前）よりも大きくなったものの、ショットブラスト後に対しては若干小さくなった。全反射率は３６０ｎｍの光波長において６．５～６．６％と７％以下であった。正反射率は３６０ｎｍの光波長において０．１％以下であった。
〔実施例３〕
試料２の平坦な上下面を粒度３２５番のダイヤモンド砥石で厚さが３０ｍｍになるまで研磨した後に洗浄した。試料２の研磨面の表面粗さは０．５～０．６μｍＲａであった。試料２の研磨面は、３６０ｎｍの光波長において全反射率が８．０～８．１％と７％を超えていた。正反射率は３６０ｎｍの光波長において０．２～０．３％であった。
次いで、試料２の研磨面（実施例１のピン４およびリム６に相当する面）に球形粒子によるショットピーニングを施した。球形粒子はガラスビーズとし、表２の条件でショットピーニングを４回施した。電子顕微鏡で観察したところ、多数の球形打痕が重なって試料２の上面に形成されていた。球形打痕のサイズは球形粒子と同様であった。表面粗さは、０．７～０．８μｍＲａと大きくなった。全反射率は、３６０ｎｍの光波長において６．６～６．８％と７％以下であった。正反射率は３６０ｎｍの光波長において０．１％以下であった。
〔実施例４〕
実施例３の試料２の研磨面に表２の条件でガラスビーズによるショットピーニングを更に４回施した。表面粗さは、０．９～１．０μｍＲａと実施例３に対し更に大きくなった。また、全反射率は３６０ｎｍの光波長において６．２～６．３％と実施例３に対し更に低下した。正反射率は３６０ｎｍの光波長において０．１％以下であった。
〔実施例５〕
試料２の平坦な上下面を粒度３２５番のダイヤモンド砥石で厚さが３０ｍｍになるまで研磨した後に、粒径３μｍのダイヤモンドを含むラップ液を用いてハンドラップ加工を行った。試料２のラップ面の表面粗さは０．２～０．３μｍＲａであった。試料２のラップ面は、３６０ｎｍの光波長において全反射率が７．１％程度％と７％を僅かに超えていた。正反射率は３６０ｎｍの光波長において０．９～１．０％であった。
次いで、試料２のラップ面に球形粒子によるショットピーニングを施した。球形粒子はガラスビーズとし、表２の条件でショットピーニングを８回施した。電子顕微鏡で観察したところ、多数の球形打痕が重なって試料２の上面に形成されていた。球形打痕のサイズは球形粒子と同様であった。表面粗さは、０．６～０．７μｍＲａと大きくなった。全反射率は３６０ｎｍの光波長において６．４～６．６％と７％以下であった。正反射率は３６０ｎｍの光波長において０．４～０．５％であった。
Figure JPOXMLDOC01-appb-T000002
２・・・真空チャック
４・・・ピン
６・・・リム
８・・・非接触面

Claims (10)

  1. 上面に基板を吸着するセラミック真空チャックにおいて、５５～７５重量％以上のアルミナ（Ａｌ2Ｏ3）と、酸化物（ＳｉＯ2）に換算して少なくとも３重量％のＳｉと、酸化物（ＣａＯ）に換算して少なくとも０．４重量％のＣａと、酸化物（ＭｇＯ）に換算して少なくとも０．４重量％のＭｇと、着色剤と、１％以下の不純物を含む着色セラミック焼結体から成り、前記基板を支持する多数のピンと前記多数のピンを少なくとも部分的に囲むリムが砥粒によるショットブラストにより前記上面に形成され、球形粒子によるショットピーニングが前記上面全体に施されたことを特徴とするセラミック真空チャック。
  2. セラミック真空チャックのヤング率が２００ＧＰａ以上である請求項１に記載の真空チャック。
  3. 前記上面に光が照射されたとき、全反射率が３６０ｎｍの光波長において７％以下である請求項１に記載の真空チャック。
  4. 前記着色剤は、Ｆｅ、Ｍｎ、Ｃｏ、ＴｉおよびＣｒの中から選ばれる請求項１に記載の真空チャック。
  5. 前記着色剤は、酸化物（Ｆｅ2Ｏ3）に換算して２～２０重量％のＦｅを含む請求項４に記載の真空チャック。
  6. 前記球形粒子はガラスビーズである請求項１に記載の真空チャック。
  7. 前記球形粒子は平均粒径が１０～２５μｍのガラスビーズである請求項６に記載の真空チャック。
  8. 前記球形粒子は砥粒よりも小さい粒度を有する請求項１に記載の真空チャック。
  9. 着色セラミック真空チャックの製造方法において、５５～７５重量％以上のアルミナ（Ａｌ2Ｏ3）と、焼結助剤と、着色剤と、１％以下の不純物を含む原料を１２００～１４５０℃で焼結して平坦な上面を有するセラミック焼結体を生成するステップと、前記上面を研磨するステップと、マスクパターンを形成した状態でアルミナ、炭化珪素、窒化珪素又はジルコニアを主成分とする砥粒によるショットブラストを前記上面に施して多数のピンと前記多数のピンを少なくとも部分的に囲むリムを形成するステップと、ガラスビーズによるショットピーニングを前記上面に施してその全反射率を３６０ｎｍの光波長において７％以下へ低下させるステップを含む着色セラミック真空チャックの製造方法。
  10. 前記ガラスビーズは平均粒径が１０～２５μｍである請求項９に記載の着色セラミック真空チャックの製造方法。
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