WO2010074184A1 - 光半導体装置用リードフレーム、その製造方法および光半導体装置 - Google Patents
光半導体装置用リードフレーム、その製造方法および光半導体装置 Download PDFInfo
- Publication number
- WO2010074184A1 WO2010074184A1 PCT/JP2009/071504 JP2009071504W WO2010074184A1 WO 2010074184 A1 WO2010074184 A1 WO 2010074184A1 JP 2009071504 W JP2009071504 W JP 2009071504W WO 2010074184 A1 WO2010074184 A1 WO 2010074184A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silver
- alloy
- layer
- optical semiconductor
- lead frame
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 95
- 230000003287 optical effect Effects 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000010410 layer Substances 0.000 claims abstract description 164
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 118
- 229910052709 silver Inorganic materials 0.000 claims abstract description 118
- 239000004332 silver Substances 0.000 claims abstract description 118
- 239000002344 surface layer Substances 0.000 claims abstract description 98
- 229910001316 Ag alloy Inorganic materials 0.000 claims abstract description 94
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 230000007797 corrosion Effects 0.000 claims abstract description 45
- 238000005260 corrosion Methods 0.000 claims abstract description 45
- 239000006104 solid solution Substances 0.000 claims abstract description 41
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 28
- 239000000956 alloy Substances 0.000 claims abstract description 28
- 239000007769 metal material Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 19
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 13
- 229910000838 Al alloy Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910001020 Au alloy Inorganic materials 0.000 claims description 5
- 229910000531 Co alloy Inorganic materials 0.000 claims description 5
- 229910000846 In alloy Inorganic materials 0.000 claims description 5
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 5
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000003353 gold alloy Substances 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 238000007747 plating Methods 0.000 description 47
- 239000000243 solution Substances 0.000 description 15
- 238000005452 bending Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 230000017525 heat dissipation Effects 0.000 description 9
- 238000002310 reflectometry Methods 0.000 description 9
- 230000007774 longterm Effects 0.000 description 8
- 238000005486 sulfidation Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000005238 degreasing Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000005554 pickling Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 229910000629 Rh alloy Inorganic materials 0.000 description 2
- 229910000929 Ru alloy Inorganic materials 0.000 description 2
- 229910001245 Sb alloy Inorganic materials 0.000 description 2
- 229910001370 Se alloy Inorganic materials 0.000 description 2
- 229910018731 Sn—Au Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 2
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 2
- IOBIJTFWSZQXPN-UHFFFAOYSA-N [Rh].[Ag] Chemical compound [Rh].[Ag] IOBIJTFWSZQXPN-UHFFFAOYSA-N 0.000 description 2
- JMGVPAUIBBRNCO-UHFFFAOYSA-N [Ru].[Ag] Chemical compound [Ru].[Ag] JMGVPAUIBBRNCO-UHFFFAOYSA-N 0.000 description 2
- 239000002140 antimony alloy Substances 0.000 description 2
- LGFYIAWZICUNLK-UHFFFAOYSA-N antimony silver Chemical compound [Ag].[Sb] LGFYIAWZICUNLK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- KRRRBSZQCHDZMP-UHFFFAOYSA-N selanylidenesilver Chemical compound [Ag]=[Se] KRRRBSZQCHDZMP-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910017392 Au—Co Inorganic materials 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229920001353 Dextrin Polymers 0.000 description 1
- 239000004375 Dextrin Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- FJMNNXLGOUYVHO-UHFFFAOYSA-N aluminum zinc Chemical group [Al].[Zn] FJMNNXLGOUYVHO-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- CCXYPVYRAOXCHB-UHFFFAOYSA-N bismuth silver Chemical compound [Ag].[Bi] CCXYPVYRAOXCHB-UHFFFAOYSA-N 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000019425 dextrin Nutrition 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 1
- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
Definitions
- the present invention relates to an optical semiconductor device lead frame, a manufacturing method thereof, and an optical semiconductor device.
- Lead frames for optical semiconductor devices are widely used as constituent members of various display / illumination light sources using light emitting elements, which are optical semiconductor elements such as LED (Light Emitting Diode) elements, as light sources.
- a lead frame is arranged on a substrate, and after the light emitting element is mounted on the lead frame, the deterioration of the light emitting element and its peripheral parts due to external factors such as heat, moisture, and oxidation are prevented.
- the light emitting element and its periphery are sealed with resin.
- the reflective material of the lead frame is required to have a high reflectance (for example, a reflectance of 80% or more) in the entire visible light wavelength range (400 to 700 nm).
- LED elements have also been used as light sources for measuring / analyzing instruments using ultraviolet rays, and the reflective material is required to have a high reflectance at a wavelength of about 300 nm. Therefore, in an optical semiconductor device when used as a light source for illumination, the reflection characteristics of the reflecting material are extremely important factors that affect the product performance.
- a layer (film) made of silver or a silver alloy is formed on the lead frame corresponding to the portion immediately below the LED element for the purpose of improving light reflectance (hereinafter referred to as reflectance).
- a silver plating layer is formed on the reflective surface (Patent Document 1), and after the formation of the silver or silver alloy film, a heat treatment is performed at 200 ° C. or more for 30 seconds or more, and the crystal grain size of the film is 0.5 ⁇ m to 30 ⁇ m.
- Patent Document 2 and the like are known.
- a method of preventing silver sulfidation in a film made of silver or a silver alloy by coating with various precious metals For example, a method has been proposed in which a palladium layer is formed on a nickel underlayer by 0.005 to 0.15 ⁇ m and a rhodium layer is formed as a top layer by 0.003 to 0.05 ⁇ m to improve the reflectance (Patent Document). 3).
- the lead frame formed by such a method is inferior in reflectance to a lead frame coated with a film made of silver or a silver alloy, and has a reflectance of 80% or more required for the visible light region as a light source for illumination. Difficult to reach level.
- the rhodium layer has a portion where the reflectance is lowered by 20% or more than that of the silver layer, the required characteristics of the reflectance cannot be satisfied in the blue and white optical semiconductor devices.
- An object of the present invention is to provide a lead frame for an optical semiconductor device that has particularly good reflectivity characteristics in the near-ultraviolet region and does not cause a decrease in luminance over a long period of time, a manufacturing method thereof, and an optical semiconductor device.
- a surface layer made of a metal or an alloy thereof having excellent corrosion resistance is formed on the surface of a layer made of silver or a silver alloy, and the concentration of the metal component having excellent corrosion resistance of the surface layer is the surface layer.
- the outermost part of the material is 50% by mass or more and the coating thickness is 0.001 to 0.25 ⁇ m, and further, a solid solution layer is formed between the surface layer and the layer made of silver or a silver alloy.
- a lead frame for an optical semiconductor device in which a layer made of silver or a silver alloy is formed on a conductive substrate, and has a surface layer made of a metal having excellent corrosion resistance or an alloy thereof as an outermost layer.
- the concentration of the metal component having excellent corrosion resistance is 50% by mass or more at the outermost surface portion of the surface layer, and the coating thickness is 0.001 to 0.25 ⁇ m, and is composed of the surface layer and the silver or silver alloy.
- a lead frame for an optical semiconductor device wherein a solid solution layer of a metal material that is a main component of the surface layer and silver is formed between the layers.
- the solid solution layer includes a main metal component forming the surface layer, and the metal component has a concentration distribution from the surface layer side to a layer side made of silver or a silver alloy.
- An intermediate layer made of a metal or alloy selected from the group consisting of nickel, nickel alloy, cobalt, cobalt alloy, copper, and copper alloy between the conductive substrate and the layer made of silver or silver alloy The lead frame for optical semiconductor devices according to any one of (1) to (4), wherein at least one layer is formed.
- normal temperature means 25 ° C.
- the metal having excellent corrosion resistance of the surface layer or an alloy thereof is selected from the group consisting of gold, gold alloy, indium, indium alloy, palladium, palladium alloy, tin, and tin alloy.
- a method of manufacturing a lead frame for an optical semiconductor device characterized by diffusing inside.
- (11) The method of manufacturing a lead frame for an optical semiconductor device according to (5), wherein the layer made of silver or a silver alloy and the intermediate layer are formed by electroplating. Of manufacturing leadframes for use in a car.
- a metal having excellent corrosion resistance or an alloy thereof means discoloration even after being kept in air containing hydrogen sulfide (H 2 S) for 24 hours in a sulfuration test (see JIS H8502-1999). Specifically, it means a metal or an alloy having a rating number (RN) of 9 or more after conducting a sulfidation test in an air containing 3% by volume of hydrogen sulfide for 24 hours.
- H 2 S hydrogen sulfide
- RN rating number
- the outermost layer a surface layer made of a metal having excellent corrosion resistance or an alloy thereof is formed, and silver contained in a layer made of silver or a silver alloy forms a solid solution layer without forming an intermetallic compound.
- the silver or silver alloy has good reflectance characteristics, excellent adhesion, and good electrical conductivity can be ensured. With these effects, an optical semiconductor lead frame having high long-term reliability can be obtained.
- FIG. 1 is a schematic cross-sectional view of one embodiment of a lead frame for an optical semiconductor device according to the present invention.
- FIG. 2 is a schematic cross-sectional view of another embodiment of the lead frame for optical semiconductor devices according to the present invention.
- FIG. 3 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
- FIG. 4 is a schematic sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
- FIG. 5 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
- FIG. 6 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
- FIG. 7 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
- a surface layer made of a metal or an alloy thereof having excellent corrosion resistance is formed on the surface of a layer made of silver or a silver alloy as an outermost layer, so that the reflectance of light in the near ultraviolet region is also lowered. Can be suppressed.
- the reflectance of light near a wavelength of 300 nm was as low as several percent when only a layer made of silver or a silver alloy was provided on a conductive substrate, but the surface of the layer made of silver or a silver alloy has a corrosion resistance.
- the lead frame of the present invention has a surface layer made of a metal or an alloy thereof having excellent corrosion resistance as the outermost layer, so that the layer made of silver or a silver alloy is not exposed, and therefore silver due to the influence of humidity, etc. Elution causes migration, and the possibility of a short circuit accident in the formed circuit is reduced. Further, by forming a surface layer made of a metal having excellent corrosion resistance or an alloy thereof on the surface of the layer made of silver or a silver alloy, sulfidation of the layer made of silver or the silver alloy can be suppressed, and thus silver or silver Discoloration of the silver alloy layer is suppressed.
- the lead frame of the present invention is used for an optical semiconductor element, for example, an LED element, even if the optical semiconductor device emits light (lights up) for a long period of 10,000 hours or more, the brightness of the optical semiconductor device is reduced. It can be suppressed to several percent.
- the lead frame of the present invention can be used as a lead frame of an optical semiconductor device having good reflectance characteristics in a wide wavelength band from the near ultraviolet region to the near infrared region and high long-term reliability.
- the surface layer is formed of an alloy
- any alloy system that can form a solid solution layer and a layer made of silver or a silver alloy may be used.
- a tin (Sn) -gold (Au) alloy is used as the surface layer. It is possible to select.
- a tin layer is formed on a layer made of silver or a silver alloy, a gold layer is formed on the tin layer, and an appropriate heat treatment is performed, so that the surface layer is an Sn—Au layer, and the solid solution layer is It is made of Ag—Sn—Au.
- the concentration of the metal having excellent corrosion resistance contained in the surface layer is 50% by mass or more in the outermost part of the surface layer, so that the layer made of silver or a silver alloy is bonded to the sulfur component. Can be prevented from discoloring.
- concentration of the metal excellent in the corrosion resistance contained in the outermost part of a surface layer 65 mass% or more is more preferable.
- the outermost part in the present invention means a part from 0.0005 to 0.001 ⁇ m from the surface of the surface layer to the inside, and the metal concentration of this part is measured by quantitative analysis of the AES measuring apparatus shown in the examples. can do.
- the metal having excellent corrosion resistance is involved in the formation of the solid solution layer described below, but the ratio of diffusing into the silver or silver alloy layer to promote the formation of the solid solution layer is 5% of the coated outermost layer metal amount. It is preferably ⁇ 50 mass%, more preferably 5 to 35 mass%, further preferably 5 to 15 mass%.
- concentration of the metal excellent in the corrosion resistance contained in the outermost part of a surface layer may be 100 mass% except for an inevitable impurity.
- the solid solution layer includes a main metal component that forms a surface layer, and the metal component has a concentration distribution from the surface layer side to the surface layer and the layer side made of silver or a silver alloy.
- the adhesion between the surface layer and the layer made of silver or a silver alloy can be improved, so that the internal stress due to heat, lattice strain, etc. can be relaxed and the heat resistance can be improved.
- the sulfur component that has entered the inside reacts with silver or a silver alloy. Since the degree of sulfidation can be reduced even in the depth direction, the corrosion resistance can be further improved.
- the lead frame of the present invention has good reflectivity characteristics and can easily form a film on its surface by reducing the cost by making the conductive substrate copper, copper alloy, aluminum or aluminum alloy. Can also contribute. Furthermore, the lead frame of the present invention using copper, copper alloy, aluminum, or aluminum alloy as the conductive substrate has excellent heat dissipation characteristics, and generates heat (thermal energy) generated when the light emitting element emits light. It is because it can discharge
- the lead frame of the present invention is a metal or alloy selected from the group consisting of nickel, nickel alloy, cobalt, cobalt alloy, copper, and copper alloy between the conductive substrate and the layer made of silver or silver alloy.
- the material constituting the conductive substrate diffuses into a layer made of silver or a silver alloy due to heat generated when the light emitting element emits light. Deterioration is prevented, the reflectance characteristics become more reliable over a long period of time, and the adhesion between the substrate and the layer made of silver or a silver alloy is improved.
- the thickness of the intermediate layer is determined in consideration of pressability, cost, productivity, heat resistance, and the like.
- the total thickness of the intermediate layer is preferably 0.2 to 2 ⁇ m, more preferably 0.5 to 1 ⁇ m.
- the intermediate layer may be formed of a plurality of layers, it is usually preferable to have two or less layers in consideration of productivity.
- the lead frame of the present invention has a layer thickness of 0.2 ⁇ m or more in order to ensure long-term reliability, good reflectance characteristics, and good pressability and bending workability.
- the thickness is preferably 5.0 ⁇ m or less. This is because if the film is too thin, the reflection characteristics become insufficient, while if it is too thick, cracks are likely to occur during pressing or bending.
- the metal having excellent heat resistance used for the surface layer of the lead frame of the present invention or an alloy thereof is selected from the group consisting of gold, gold alloy, indium, indium alloy, palladium, palladium alloy, tin, and tin alloy. Corrosion resistance and productivity can be improved, which is preferable. From the viewpoint of reliability, long-term reliability can be ensured by reducing the thickness of the surface layer from 0.001 ⁇ m to 0.25 ⁇ m without reducing the light reflectance. If the surface layer is too thin, the corrosion resistance and the effect of improving the reflectance at a wavelength of 300 nm are insufficient, and if the surface layer is too thick, the reflectance in the visible light region is insufficient, and This is because bending workability deteriorates.
- the surface layer is formed on the surface of the silver or silver alloy layer, and then a solid solution is formed between the material forming the surface layer and pure silver at a temperature of 100 ° C. or higher.
- heat treatment is performed in a temperature range that does not exceed the allowable temperature, and the surface layer is made of a material that forms the surface layer with the metal component having excellent corrosion resistance of the surface layer remaining at the above concentration, while the remaining component is silver or a silver alloy.
- the heat treatment temperature is preferably 100 to 300 ° C., and it is necessary to select a temperature at which the base material is not softened or deteriorated by the heat treatment.
- the heat treatment time is preferably in the range of 0.25 to 48 hours. Further, as the heat treatment method, a heat treatment method such as batch treatment or in-line can be appropriately selected.
- the heat treatment atmosphere may promote the oxidation of the surface layer as the oxygen concentration increases
- the heat treatment atmosphere is preferably treated in an inert or reducing atmosphere gas such as argon, nitrogen, or carbon monoxide. More preferably, the atmosphere has a residual oxygen of 1000 ppm or less.
- a reducing acid eg dilute sulfuric acid or dilute hydrochloric acid
- the thickness of the layer made of silver or silver alloy can be easily adjusted by forming the layer made of silver or silver alloy by electroplating. Further, as other forming methods, there are a clad method and a sputtering method, but these methods make it difficult to control the thickness and increase the cost.
- the electroplating method is effective for forming a solid solution layer by diffusion because a large number of crystal grain boundaries can be formed in a layer made of silver or a silver alloy.
- the optical semiconductor device of the present invention can obtain the reflectance characteristics effectively at low cost by using the lead frame of the present invention at least at the place where the optical semiconductor element is mounted. This is because if the surface layer is formed only on the mounting portion of the optical semiconductor element and the alteration of the layer made of silver or silver alloy can be prevented, the reflectance characteristics are not greatly affected.
- a layer made of silver or a silver alloy may be exposed on the surface at a location where resin sealing is performed.
- the surface layer may be partially formed on silver or a layer made of silver, and may be formed by, for example, partial plating such as stripe plating or spot plating.
- Manufacturing a partially formed lead frame can reduce the amount of metal used in unnecessary portions, so that an optical semiconductor device that is easy for the environment and low in cost can be obtained.
- a layer made of silver or a silver alloy is exposed on the surface, solder wettability can be easily secured, and an effect of being useful at the time of mounting can be obtained.
- FIG. 1 is a schematic cross-sectional view of one embodiment of a lead frame for an optical semiconductor device according to the present invention.
- FIG. 1 shows a state in which the optical semiconductor element 5 is mounted on the lead frame (the same applies to FIGS. 2 to 8 below).
- the lead frame of this embodiment has a layer 2 made of silver or a silver alloy formed on a conductive substrate 1, and has a surface layer 4 made of a metal or an alloy thereof having excellent corrosion resistance as the outermost layer.
- a solid solution layer 3 of a metal material and silver, which are the main components of the surface layer, is formed between the surface layer 4 and the layer 2 made of silver or a silver alloy.
- An optical semiconductor element 5 is mounted thereon.
- the lead frame of the present invention is an optical semiconductor device lead frame having excellent reflection characteristics in the near-ultraviolet and visible light region and excellent in corrosion resistance and long-term reliability.
- copper, copper alloy, aluminum, aluminum alloy, iron or iron alloy can be used as the conductive substrate 1, and as a substrate excellent in heat dissipation, preferably copper, copper alloy, aluminum, and A metal or alloy selected from the group consisting of aluminum alloys.
- the conductive substrate 1 is made of copper or copper alloy, aluminum or aluminum alloy, the surface layer 4 can be easily formed, and a lead frame that can contribute to cost reduction can be provided.
- these lead frames have excellent heat dissipation characteristics due to good heat transfer coefficient, which is a characteristic related to good conductivity, and heat generation (thermal energy) generated when the optical semiconductor element emits light, This is because it can be smoothly discharged to the outside through the lead frame.
- “good reflection characteristics” means that the reflectance is 80% or more in the visible light region having a wavelength of 400 nm or more and the reflectance is 30% or more in the near-ultraviolet region having a wavelength of less than 400 nm. .
- the reflection characteristics if the reflectance is 70% or more in the visible light region having a wavelength of 400 nm or more, it may be allowed depending on the application.
- the thickness of the layer 2 made of silver or silver alloy is preferably 0.2 to 5.0 ⁇ m, and more preferably 1.0 to 3.0 ⁇ m. This thickness can be realized by adjusting the coating thickness of the layer 2 made of silver or a silver alloy, and can be manufactured at low cost without using a precious metal more than necessary. Here, if the thickness of the layer 2 made of silver or a silver alloy is too thin, the contribution to the reflectance is not sufficient. On the other hand, if the thickness is too large, the effect is saturated and the cost is increased.
- Examples of the silver alloy used for the layer made of silver or a silver alloy include a silver-tin alloy, a silver-indium alloy, a silver-rhodium alloy, a silver-ruthenium alloy, a silver-gold alloy, a silver-palladium alloy, and a silver-nickel alloy.
- Silver-selenium alloy, silver-antimony alloy, silver-copper alloy, silver-zinc alloy, silver-bismuth alloy, silver-tin alloy, silver-indium alloy, silver-rhodium alloy, silver-ruthenium alloy It is preferably selected from the group consisting of silver-gold alloy, silver-palladium alloy, silver-nickel alloy, silver-selenium alloy, silver-antimony alloy and silver-copper alloy.
- these alloys are relatively easy to form and are inferior to pure silver, they can ensure a reflectivity of 80% or more in the visible light region, so they have good reflection characteristics for light in a wide wavelength region. Obtainable. Further, alloying makes it difficult to cause silver sulfidation, and further corrosion resistance is maintained. In addition, since the reflectance will fall significantly when the silver content rate in a silver alloy becomes low too much, it is preferable that the said silver content rate is 80 mass% or more.
- the surface layer 4 made of a metal having excellent corrosion resistance or an alloy thereof is formed so that the concentration of the metal component having excellent corrosion resistance is 50% by mass or more, preferably 65% by mass or more in the outermost part.
- the concentration of the metal component having excellent corrosion resistance is 50% by mass or more, preferably 65% by mass or more in the outermost part.
- the layer 2 made of silver or a silver alloy is formed on the conductive substrate 1, and then the surface layer 4 is formed, and then the material for forming the surface layer 4 and silver or silver at a temperature of 100 ° C. or higher. It can manufacture by performing heat processing in the temperature range which does not exceed the temperature which can form a solid solution with an alloy.
- the layer 2 made of silver or silver alloy is preferably formed by electroplating.
- any optical semiconductor element such as an LED element can be used as the optical semiconductor element 5.
- FIG. 2 is a schematic cross-sectional view of another embodiment of the lead frame for an optical semiconductor device according to the present invention, in which a conductive substrate 1 and a layer 2 made of silver or a silver alloy are formed on the lead frame of the embodiment shown in FIG.
- the intermediate layer 6 is formed between the two.
- the intermediate layer 6 is preferably made of a metal or alloy selected from the group consisting of nickel, nickel alloy, cobalt, cobalt alloy, copper, and copper alloy.
- the conductive layer 1 becomes conductive due to heat generation of the optical semiconductor element. It is possible to prevent deterioration of reflectance characteristics due to diffusion of the material constituting the substrate into a layer made of silver or a silver alloy, and to obtain highly reliable reflectance characteristics over a long period of time.
- FIG. 3 is a schematic cross-sectional view of still another embodiment of the lead frame for an optical semiconductor device according to the present invention. From the surface layer 4, the solid solution layer 3, silver or a silver alloy only on the portion where the optical semiconductor element 5 is mounted. A state in which a layer 2 is formed is shown. In the present invention, it is also possible to form the surface layer 4, the solid solution layer 3, and the layer 2 made of silver or a silver alloy only in a portion that becomes a problem when blackened. In the present embodiment, the intermediate layer 6 is formed on the entire surface of the conductive substrate 1. However, if the intermediate layer 6 is interposed between the conductive substrate 1 and the layer 2 made of silver or silver alloy, the intermediate layer 6 is partially formed. It may be. In the description of FIG. 3, reference numerals that are not particularly referred to have the same meaning as the reference numerals in FIG. 1 or 2 (the same applies to the following drawings).
- FIG. 4 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
- the solid solution layer 3 and the layer 2 made of silver or a silver alloy are formed, and the main metal component constituting the surface layer 4 in the solid solution layer 3 is the layer side made of the silver or silver alloy from the surface layer 4 side. 2 has a concentration distribution.
- FIG. 5 is a schematic sectional view of a lead frame for an optical semiconductor device similar to the embodiment shown in FIG. 2, and the optical semiconductor elements 5 are mounted on both sides of the lead frame. As in this aspect, it is possible to configure an optical semiconductor device using both sides as well as one side.
- FIG. 6 is a schematic cross-sectional view of still another embodiment of the lead frame for an optical semiconductor device according to the present invention, in which a concave portion is provided in the conductive substrate 1 and the optical semiconductor element 5 is mounted inside the concave portion.
- the lead frame for an optical semiconductor device of the present invention can be applied to a lead frame shape in which a concavity is provided to improve the light collecting property.
- FIG. 7 is a schematic cross-sectional view of still another embodiment of the lead frame for an optical semiconductor device according to the present invention, in which a concave portion is provided in the conductive substrate 1 and the optical semiconductor element 5 is mounted inside the concave portion. And the surface layer 4 and the solid solution layer 3 are formed only in the recessed part. Even in a lead frame having a concave portion, by providing the layer 4 and the solid solution layer 3 only in a portion that contributes to the reflection of light emitted from the optical semiconductor element, the corrosion resistance of only the reflective portion can be improved as appropriate. .
- the layer 2, the surface layer 4, and the intermediate layer 6 made of silver or a silver alloy are preferably formed by electroplating.
- Example 1 As Example 1, the conductive substrate shown in Table 1 having a thickness of 0.3 mm and a width of 50 mm was subjected to the following pretreatment, and then subjected to the following electroplating treatment, whereby the configuration shown in Table 1 was obtained.
- Lead frames of Invention Examples 1-31, Conventional Example 1, and Comparative Examples 1-2 were prepared.
- the layer structure of each lead frame is that Examples 1 to 5 of the present invention are formed in the order of a conductive substrate, a layer made of silver or a silver alloy, a solid solution layer, and a surface layer.
- Examples 6 to 31 of the present invention and Comparative Example 1 In ⁇ 2, the conductive substrate, the intermediate layer, the layer made of silver or silver alloy, the solid solution layer, and the surface layer are formed in this order, and in Conventional Example 1, the conductive substrate, intermediate layer, silver or silver alloy layer are formed in this order. It has been done.
- the intermediate layer thickness, silver or silver alloy layer thickness (shown as “silver layer thickness”), and surface layer thickness shown in Table 1 are the thicknesses as an average value (arithmetic average of measured values at 10 arbitrary points). It is. Each layer thickness was measured using a fluorescent X-ray film thickness measuring device (SFT9400: trade name, manufactured by SII).
- C19400”, “C11000”, “C26800”, “C52100”, and “C77000” represent a copper or copper alloy substrate, and the numerical value after C is CDA ( Indicates the type according to the Copper Development Association) standard.
- A1100”, “A2014”, “A3003”, and “A5052” represent an aluminum or aluminum alloy substrate, and the numerical value after A indicates the type according to JIS.
- SUS304” and “42 alloy” represent an iron-based substrate, “SUS304” represents a stainless steel of the kind specified by JIS, and “42 alloy” represents a 42% Ni-containing iron alloy.
- the pretreatment among the conductive substrates, the copper substrate, the copper alloy substrate, and the iron-based substrate were subjected to the following electrolytic degreasing and then the following pickling.
- the aluminum base and the aluminum alloy base were subjected to the following electrolytic degreasing, pickling, and zinc replacement.
- silver strike plating was performed by the thickness of 0.01 micrometer.
- plating solution composition and plating conditions for each plating used in Example 1 are shown below.
- Plating conditions [Ag plating] Plating solution: AgCN 50 g / liter, KCN 100 g / liter, K 2 CO 3 30 g / liter Plating condition: current density 1 A / dm 2 , temperature 30 ° C.
- Plating solution CuSO 4 .5H 2 O 250 g / liter, H 2 SO 4 50 g / liter, NaCl 0.1 g / liter Plating condition: current density 6 A / dm 2 , temperature 40 ° C.
- Plating solution Ni (SO 3 NH 2) 2 ⁇ 4H 2 O 500g / l, NiCl 2 30 g / l, H 3 BO 3 30g / l Plating Conditions: current density 5 A / dm 2, temperature 50 ° C.
- Plating solution KAu (CN) 2 14.6 g / liter, C 6 H 8 O 7 150 g / liter, K 2 C 6 H 4 O 7 180 g / liter Plating condition: current density 1 A / dm 2 , temperature 40 ° C.
- Au-0.3% Co Plating solution KAu (CN) 2 14.6 g / liter, C 6 H 8 O 7 150 g / liter, K 2 C 6 H 4 O 7 180 g / liter, EDTA-Co (II) 3 g / liter, piperazine 2 g / liter Plating conditions: current density 1 A / dm 2 , temperature 40 ° C.
- Plating solution Pd (NH 3 ) 2 Cl 45 g / liter, NH 4 OH 90 ml / liter, (NH 4 ) 2 SO 4 50 g / liter Plating condition: current density 1 A / dm 2 , temperature 30 ° C.
- Plating solution InCl 3 45 g / liter, KCN 150 g / liter, KOH 35 g / liter, dextrin 35 g / liter Plating conditions: current density 2 A / dm 2 , temperature 20 ° C.
- Solid solution layer formation processing conditions Each sample subjected to the plating treatment described in Table 1 under the following conditions was subjected to a heat treatment at 100 ° C. for 12 hours in an argon gas atmosphere having a residual oxygen concentration of 100 ppm or less to form a solid solution layer. After the formation of the solid solution in this treatment, the concentration of the metal component having excellent corrosion resistance was confirmed on the outermost surface portion of the surface layer using an AES measuring apparatus. The concentrations of the metal components having excellent corrosion resistance were all 50% by mass or more.
- Corrosion resistance Rating number (RN) evaluation was performed about the sulfide state (described in JIS H8502), H 2 S 3 ppm, and the corrosion state after 24 hours. The results are shown in Table 2. Here, when the rating number is 9 or more, it means that even if the optical semiconductor element (LED element) is lit for 10,000 hours, the decrease in luminance is as small as about several percent.
- Reflectivity measurement after the sulfurization test Reflectivity measurement: In a spectrophotometer (U-4100 (trade name, manufactured by Hitachi High-Technologies Corporation)), continuous measurement was performed with the total reflectivity ranging from 300 nm to 800 nm.
- Heat dissipation (thermal conductivity): A conductive substrate having an electrical conductivity of 10% or more in terms of IACS (International Annealed Copper Standard) has high heat dissipation (thermal conductivity) and is considered good. "", Those with less than 10% have low heat dissipation (thermal conductivity) and are marked as "x" as being defective, and are shown in Table 2. This is because electrical conductivity and thermal conductivity are in a substantially proportional relationship, and those having an electrical conductivity of 10% or more in IACS are judged to have good thermal conductivity and high heat dissipation.
- the present invention example satisfies the required reflectance although the reflectance in the visible region may be slightly lower than the conventional example, and is very excellent in stability after the corrosion resistance test.
- a layer made of silver or a silver alloy is formed on copper, a copper alloy, aluminum or an aluminum alloy, and a specific coating layer is provided on the upper layer, so that the reflectance particularly at 300 nm is higher than that of conventional silver or a silver alloy.
- the level that was several percent in the initial stage improved to several tens percent. This can be applied to an optical semiconductor using these wavelengths by improving the reflectance in the near ultraviolet region.
- Example 28 and 29 of the present invention the evaluation of “x” was made in terms of heat dissipation, but an optical semiconductor lead frame that does not require large heat dissipation can be used as appropriate. Further, in Example 30 of the present invention, since the silver layer thickness is less than 0.2 ⁇ m, there are places where the reflectance is insufficient, but the corrosion resistance and other characteristics are superior to those of Comparative Example 1.
- An optical semiconductor lead frame that allows a reflectance of about 70% can be used as appropriate.
- Inventive Example 31 since the silver layer thickness exceeds 5.0 ⁇ m, it is evaluated as “ ⁇ ” in bending workability, but other characteristics are superior to Comparative Example 1, An optical semiconductor lead frame for applications where bending workability is not important can be used as appropriate.
- Example 2 As Example 2, a conductive substrate made of a copper alloy made of C19400 having a thickness of 0.3 mm and a width of 50 mm was pretreated in the same manner as in Example 1 and the underlying layer was Ni plated 1.0 ⁇ m, Ag strike plated 0.01 ⁇ m, After all the examples were processed in the order of Ag plating 3.0 ⁇ m, Examples 32 to 34 of the present invention and Comparative Examples 3 and 4 were tin (Sn) plating as surface layers, Example 35 of the present invention was indium (In) plating, Invention Example 36 and Comparative Example 5 were gold (Au) plating, Invention Example 37 and Comparative Example 6 were palladium (Pd) plating, and electroplating treatment was performed with all coating thicknesses of 0.02 ⁇ m.
- Example 2 The lead frames of Comparative Examples 3 to 6 were prepared.
- Example 2 in order to adjust the state of solid solution layer formation, as shown in Table 3, the heat treatment temperature was suitably adjusted between 100 to 300 ° C. and the heat treatment time between 1 to 24 hours. Then, the result of having measured the change of the density
- Table 4 the portion where the concentration of the surface layer metal is 0 indicates that no solid solution is formed between the surface layer metal and the silver or silver alloy, and the portion remains in the state of silver or silver alloy. .
- these numerical values are the analytical concentration detection values of the element at a specific depth, it goes without saying that the sum of all the numerical values does not necessarily have to be 100%. Furthermore, the evaluation results of the corrosion resistance performed on these samples are shown in Table 5.
- the examples of the present invention show sufficient values for the corrosion resistance because the metal content with excellent corrosion resistance in the surface layer satisfies the ratio defined in the present invention.
- Comparative Example 3 it can be seen that the corrosion resistance is insufficient because the content of the metal having excellent corrosion resistance in the surface layer is too small.
- the comparative examples 4 to 6 in which the surface layer disappears and all are solid solutions having no concentration distribution in the depth direction are similarly inferior in corrosion resistance. From this result, it is apparent that the lead frame for optical semiconductors excellent in corrosion resistance can be provided by having the coating component excellent in corrosion resistance remaining at a specific ratio defined in the present invention and having a concentration distribution.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
(1)導電性基体上に銀または銀合金からなる層が形成された光半導体装置用リードフレームであって、最外層として耐食性に優れた金属またはその合金からなる表層を有し、その表層の耐食性に優れた金属成分の濃度は、前記表層の最表部において50質量%以上であって、かつその被覆厚が0.001~0.25μmであり、該表層と前記銀または銀合金からなる層との間には、前記表層の主成分である金属材料と銀との固溶体層が形成されていることを特徴とする光半導体装置用リードフレーム。
(2)前記固溶体層は、前記表層を形成する主たる金属成分を含み、かつ該金属成分は前記表層側から前記銀または銀合金からなる層側にかけて濃度分布を有していることを特徴とする(1)に記載の光半導体装置用リードフレーム。
(3)前記金属成分の前記固溶体層における濃度分布は、前記表層側が高く、該表層と前記銀または銀合金からなる層側が低いことを特徴とする(2)に記載の光半導体装置用リードフレーム。
(4)前記導電性基体は、銅、銅合金、アルミニウムまたはアルミニウム合金からなることを特徴とする(1)乃至(3)のいずれか一項に記載の光半導体装置用リードフレーム。
(5)前記導電性基体と前記銀または銀合金からなる層との間に、ニッケル、ニッケル合金、コバルト、コバルト合金、銅、および銅合金からなる群から選ばれた金属または合金からなる中間層が少なくとも1層形成されていることを特徴とする(1)乃至(4)のいずれか一項に記載の光半導体装置用リードフレーム。
(6)前記銀または銀合金からなる層の厚さが0.2~5.0μmであることを特徴とする(1)乃至(5)のいずれか一項に記載の光半導体装置用リードフレーム。
(7)前記表層は、常温で銀または銀合金と固溶体を形成することが可能な材料で形成されていることを特徴とする(1)乃至(6)のいずれか一項に記載の光半導体装置用リードフレーム。なお、ここで、常温とは25℃を意味するものとする。
(8)前記表層の耐食性に優れた金属またはその合金は、金、金合金、インジウム、インジウム合金、パラジウム、パラジウム合金、錫、および錫合金からなる群から選ばれたことを特徴とする、(1)乃至(7)のいずれか一項に記載の光半導体装置用リードフレーム。
(9)(1)乃至(8)のいずれか一項に記載の光半導体装置用リードフレームの製造方法であって、前記銀または銀合金層の表面に、前記表層を形成した後、100℃以上の温度でかつ表層を形成する材料と銀または銀合金と固溶体を形成することが可能な温度を超えない温度範囲において加熱処理を施し、表層を形成する材料を銀または銀合金からなる層の内部に拡散させることを特徴とする光半導体装置用リードフレームの製造方法。
(10)(1)乃至(8)のいずれか一項に記載の光半導体装置用リードフレームの製造方法であって、前記銀または銀合金からなる層を電気めっき法により形成することを特徴とする、光半導体装置用リードフレームの製造方法。
(11)(5)に記載の光半導体装置用リードフレームの製造方法であって、前記銀または銀合金からなる層および前記中間層を電気めっき法により形成することを特徴とする、光半導体装置用リードフレームの製造方法。
(12)少なくとも光半導体素子を搭載する箇所に(1)乃至(8)のいずれか一項に記載の光半導体装置用リードフレームを用いたことを特徴とする光半導体装置。
なお、本発明において「耐食性に優れた金属またはその合金」とは、硫化試験(JIS H8502-1999参照)において、硫化水素(H2S)を含有する空気中に24時間保持した後でも、変色が発生しないものをいい、具体的には、硫化水素を3体積%含有する空気中で24時間保持する硫化試験実施後のレイティングナンバー(RN)が9以上である金属、合金をいう。
すなわち、本発明のリードフレームは、近紫外領域から近赤外領域までの幅広い波長帯の反射率特性が良好で、かつ長期信頼性の高い光半導体装置のリードフレームとして利用できる。
一方、この耐食性に優れた金属は、以下に述べる固溶体層の形成に関与するが、銀または銀合金層に拡散して固溶体層形成を促進する割合は、被覆された最表層金属量のうち5~50質量%であることが好ましく、5~35質量%であることがより好ましく、5~15質量%がさらに好ましい。なお、形成された固溶体は表層の最表部に存在しなくてもよいので、表層の最表部に含まれる耐食性に優れた金属の濃度は不可避不純物を除き100質量%であってもよい。
図1に示すように、本実施態様のリードフレームは、導電性基体1上に銀または銀合金からなる層2が形成され、最外層として耐食性に優れた金属またはその合金からなる表層4を有し、該表層4と前記銀または銀合金からなる層2との間には、前記表層の主成分である金属材料と銀との固溶体層3が形成されており、表層4の一部の表面上に光半導体素子5が搭載されている。本発明において、本発明のリードフレームは、近紫外可視光域の反射特性に優れ、かつ耐食性および長期信頼性に優れた光半導体装置用リードフレームとなる。
また、本発明において「反射特性が良好」とは、波長400nm以上の可視光領域において反射率が80%以上、かつ波長400nm未満の近紫外領域において反射率が30%以上となることを意味する。なお、反射特性に関しては、波長400nm以上の可視光領域において反射率が70%以上であれば、用途により許容されることもある。
中間層6は、ニッケル、ニッケル合金、コバルト、コバルト合金、銅、銅合金からなる群から選ばれた金属または合金からなることが好ましい。
導電性基体1および銀または銀合金からなる層2との間に、ニッケル、ニッケル合金、コバルト、コバルト合金、銅または銅合金からなる中間層6を設けることで、光半導体素子の発熱によって導電性基体を構成する材料が銀または銀合金からなる層へ拡散することによる反射率特性の劣化を防ぎ、長期にわたって信頼性の高い反射率特性を得ることができる。
なお、図3中の説明において、特に言及しない符号については、図1または2における符号と同じ意味を表すこととする(以下の図においても同様である)。
実施例1として、厚さ0.3mm、幅50mmの表1に示す導電性基体に以下に示す前処理を行った後、以下に示す電気めっき処理を施すことにより、表1に示す構成の本発明例1~31、従来例1、および比較例1~2のリードフレームを作成した。
各リードフレームの層構成は、本発明例1~5は導電性基体、銀または銀合金からなる層、固溶体層、表層の順に形成されたものであり、本発明例6~31および比較例1~2では導電性基体、中間層、銀または銀合金からなる層、固溶体層、表層の順に形成されたものであり、従来例1は導電性基体、中間層、銀または銀合金層の順に形成されたものである。
また、「A1100」、「A2014」、「A3003」、および「A5052」はアルミニウムまたはアルミニウム合金基体を表し、Aの後の数値はJISによる種類を示す。
また、「SUS304」、および「42アロイ」は鉄系基体を表し、「SUS304」はJIS規定の当該種のステンレス鋼、「42アロイ」は42%Ni含有鉄合金を表す。
[電解脱脂]
脱脂液:NaOH 60g/リットル
脱脂条件:2.5A/dm2、温度60℃、脱脂時間60秒
[酸洗]
酸洗液:10%硫酸
酸洗条件:30秒 浸漬、室温
[亜鉛置換]基体がアルミニウムの時に使用
亜鉛置換液:NaOH 500g/リットル、ZnO 100g/リットル、酒石酸(C4H6O6) 10g/リットル、FeCl2 2g/リットル
処理条件:30秒 浸漬、室温
[Agストライクめっき]被覆厚0.01μm
めっき液:KAg(CN)2 5g/リットル、KCN 60g/リットル、
めっき条件:電流密度 2A/dm2、めっき時間 5秒、温度 25℃
(めっき条件)
[Agめっき]
めっき液:AgCN 50g/リットル、KCN 100g/リットル、K2CO3 30g/リットル
めっき条件:電流密度 1A/dm2、温度 30℃
[Cuめっき]
めっき液:CuSO4・5H2O 250g/リットル、H2SO4 50g/リットル、NaCl 0.1g/リットル
めっき条件:電流密度 6A/dm2、温度 40℃
[Niめっき]
めっき液:Ni(SO3NH2)2・4H2O 500g/リットル、NiCl2 30g/リットル、H3BO3 30g/リットル
めっき条件:電流密度 5 A/dm2、温度 50℃
[Coめっき]
めっき液:Co(SO3NH2)2・4H2O 500g/リットル、CoCl2 30g/リットル、H3BO3 30g/リットル
めっき条件:電流密度 5A/dm2、温度 50℃
めっき液:KAu(CN)2 14.6g/リットル、C6H8O7 150g/リットル、K2C6H4O7 180g/リットル
めっき条件:電流密度 1A/dm2、温度 40℃
[Au-Coめっき]Au-0.3%Co
めっき液:KAu(CN)2 14.6g/リットル、C6H8O7 150g/リットル、K2C6H4O7 180g/リットル、EDTA-Co(II) 3g/リットル、ピペラジン 2g/リットル
めっき条件:電流密度 1A/dm2、温度 40℃
めっき液:Pd(NH3)2Cl 45 g/リットル、NH4OH 90ミリリットル/リットル、(NH4)2SO4 50g/リットル
めっき条件:電流密度 1A/dm2、温度 30℃
[Snめっき]
めっき液:SnSO4 80g/リットル、H2SO4 80g/リットル
めっき条件:電流密度 2A/dm2、温度 30℃
[Inめっき]
めっき液:InCl3 45 g/リットル、KCN 150g/リットル、KOH 35g/リットル、デキストリン 35g/リットル
めっき条件:電流密度 2A/dm2、温度 20℃
下記の条件で表1に記載のめっき処理を行った各サンプルに対して、残留酸素濃度100ppm以下のアルゴンガス雰囲気中で、100℃で12時間の加熱処理を行い、固溶体層を形成した。本処理において固溶体を形成後、表層の最表部をAES測定装置において耐食性に優れた金属成分の濃度を確認したところ、耐食性に優れた金属成分の濃度はすべて50質量%以上であった。
得られた、本発明例、比較例、および従来例のリードフレームについて、下記試験および基準により評価を行った。その結果を表2に示す。
(1)反射率測定:分光光度計(U-4100(商品名、株式会社日立ハイテクノロジーズ製))において、全反射率を300nm~800nmにかけて連続測定を実施した。このうち、300nm、600nm、および800nmにおける反射率(%)を表2に示す。
(2)固溶体層厚:AES測定装置(Model-680(商品名、アルバック・ファイ株式会社製))において、深さ方向分析を実施、スパッタレートを厚さに換算して各層の厚さを算出した。
(3)耐食性:硫化試験(JIS H8502記載)、H2S 3ppm、24時間後の腐食状態について、レイティングナンバー(RN)評価を実施した。結果を表2に示す。なお、ここで、レイティングナンバーが9以上の場合は、光半導体素子(LED素子)を10000時間点灯しても輝度の低下が数%程度と小さいことを意味する。
(4)硫化試験後の反射率測定:反射率測定:分光光度計(U-4100(商品名、株式会社日立ハイテクノロジーズ製))において、全反射率を300nm~800nmにかけて連続測定を実施した。このうち、600nmにおいて、硫化試験前後の反射率を比較した値(%)を表2に示す。
(5)放熱性(熱伝導性):導電性基材の導電率がIACS(International Annealed Copper Standard)で10%以上であるものを放熱性(熱伝導性)が高く、良であるとして「○」印とし、10%未満であるものを放熱性(熱伝導性)が低く、不良であるとして「×」印とし、表2に示した。これは、導電率と熱伝導性はほぼ比例関係にあり、IACSで10%以上の導電率があるものは熱伝導性がよく放熱性も高いと判断されるためである。なお、この項目は参考のために示すものであり、上記(1)~(4)の各項目の評価を満足すれば、そのサンプルは用途を選択することにより実用上問題ない。
(6)曲げ加工性:作製したリードフレームにおいて、長さ30mm、幅10mmのサンプルを、長さ方向が圧延方向と平行になるように切り出し、プレス機(日本オートマチックマシン株式会社製)で曲げ半径R=0.5mmで曲げ加工性を調べた。加工した試験片の最大曲げ加工部を、マイクロスコープ(株式会社キーエンス製)を用いて175倍に拡大して観察し、曲げ加工性を判定した。最大曲げ加工部を観察した結果、割れが存在しないものを「良」と判定して表に「○」印を付し、シワや軽微な割れが存在するものを「可」と判定して表に「△」印を付し、大きな割れが存在するものを「不良」と判定して表に「×」印を付して、それぞれ表2に示した。曲げ加工性の評価は、「可」以上の評価のものを実用レベルとした。なお、この項目は参考のために示すものであり、上記(1)~(4)の各項目の評価を満足すれば、そのサンプルは用途を選択することにより実用上問題ない。
本発明例28及び29においては、放熱性において「×」評価であるが、放熱性が大きく必要とされない光半導体用リードフレームについては、適宜利用することが可能である。また、本発明例30においては、銀層厚が0.2μm未満であるため、反射率が不十分な箇所が見られるが、耐食性やその他の特性に関しては比較例1と比べても優れており、70%程度の反射率が許容される光半導体用リードフレームについては、適宜利用することが可能である。
また、本発明例31においては、銀層厚が5.0μmを超えているため、曲げ加工性において「×」評価であるが、その他の特性に関しては比較例1と比べても優れており、曲げ加工性が重視されない用途の光半導体用リードフレームについては、適宜利用することが可能である。
実施例2として、厚さ0.3mm、幅50mmのC19400からなる銅合金からなる導電性基体に実施例1と同様の前処理および下地層にNiめっき1.0μm、Agストライクめっき0.01μm、Agめっき3.0μmの順にすべての例において処理を行った後、表層として本発明例32~34および比較例3および4は錫(Sn)めっき、本発明例35はインジウム(In)めっき、本発明例36および比較例5は金(Au)めっき、本発明例37および比較例6はパラジウム(Pd)めっきで、すべての被覆厚0.02μmで電気めっき処理を行い、本発明例32~37、比較例3~6のリードフレームを作成した。なお、実施例2においては固溶体層形成の状態を調整するために、表3に示すように熱処理温度を100~300℃、加熱処理時間を1~24時間の間で各々適宜調整した。その後、表層に形成した金属成分の深さ方向における濃度(質量%)の変化を実施例1と同様にAES測定装置において測定した結果を表4に示す。なお、表4において表層金属の濃度が0の部分は、その部分において、表層金属と銀または銀合金の間で固溶体が形成されておらず、銀または銀合金のままの状態であることを示す。また、これらの数値は特定の深さにおける元素の分析濃度検出値であるので、すべての数値の合計が必ずしも100%となる必要はないことはいうまでもない。さらに、これらのサンプルについて行った耐食性の評価結果を表5に示す。
2 銀または銀合金からなる層
3 固溶体層
4 表層
5 光半導体素子
6 中間層
Claims (12)
- 導電性基体上に銀または銀合金からなる層が形成された光半導体装置用リードフレームであって、最外層として耐食性に優れた金属またはその合金からなる表層を有し、その表層の耐食性に優れた金属成分の濃度は、前記表層の最表部において50質量%以上であって、かつその被覆厚が0.001~0.25μmであり、該表層と前記銀または銀合金からなる層との間には、前記表層の主成分である金属材料と銀との固溶体層が形成されていることを特徴とする光半導体装置用リードフレーム。
- 前記固溶体層は、前記表層を形成する主たる金属成分を含み、かつ該金属成分は前記表層側から前記銀または銀合金からなる層側にかけて濃度分布を有していることを特徴とする請求項1に記載の光半導体装置用リードフレーム。
- 前記金属成分の前記固溶体層における濃度分布は、前記表層側が高く、該表層と前記銀または銀合金からなる層側が低いことを特徴とする請求項2に記載の光半導体装置用リードフレーム。
- 前記導電性基体は、銅、銅合金、アルミニウムまたはアルミニウム合金からなることを特徴とする請求項1~3のいずれか一項に記載の光半導体装置用リードフレーム。
- 前記導電性基体と前記銀または銀合金からなる層との間に、ニッケル、ニッケル合金、コバルト、コバルト合金、銅、および銅合金からなる群から選ばれた金属または合金からなる中間層が少なくとも1層形成されていることを特徴とする請求項1~4のいずれか一項に記載の光半導体装置用リードフレーム。
- 前記銀または銀合金からなる層の厚さが0.2~5.0μmであることを特徴とする請求項1~5のいずれか一項に記載の光半導体装置用リードフレーム。
- 前記表層は、常温で銀または銀合金と固溶体を形成することが可能な材料で形成されていることを特徴とする請求項1~6のいずれか一項に記載の光半導体装置用リードフレーム。
- 前記表層の耐食性に優れた金属またはその合金は、金、金合金、インジウム、インジウム合金、パラジウム、パラジウム合金、錫、錫合金からなる群から選ばれたことを特徴とする請求項1~7のいずれか一項に記載の光半導体装置用リードフレーム。
- 請求項1~8のいずれか一項に記載の光半導体装置用リードフレームの製造方法であって、前記銀または銀合金層の表面に、前記表層を形成した後、100℃以上の温度でかつ表層を形成する材料と銀または銀合金と固溶体を形成することが可能な温度を超えない温度範囲において加熱処理を施し、表層を形成する材料を銀または銀合金からなる層の内部に拡散させることを特徴とする光半導体装置用リードフレームの製造方法。
- 請求項1~8のいずれか一項に記載の光半導体装置用リードフレームの製造方法であって、前記銀または銀合金からなる層を電気めっき法により形成することを特徴とする光半導体装置用リードフレームの製造方法。
- 請求項5に記載の光半導体装置用リードフレームの製造方法であって、前記銀または銀合金からなる層および前記中間層を電気めっき法により形成することを特徴とする光半導体装置用リードフレームの製造方法。
- 少なくとも光半導体素子を搭載する箇所に請求項1~8のいずれか一項に記載の光半導体装置用リードフレームを用いたことを特徴とする光半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09834981.4A EP2372800A4 (en) | 2008-12-26 | 2009-12-24 | HOUSING FRAME FOR OPTICAL SEMICONDUCTOR ELEMENT, METHOD FOR THE PRODUCTION THEREOF AND OPTICAL SEMICONDUCTOR ELEMENT |
JP2010544137A JP4897981B2 (ja) | 2008-12-26 | 2009-12-24 | 光半導体装置用リードフレーム、その製造方法および光半導体装置 |
CN2009801517686A CN102265417B (zh) | 2008-12-26 | 2009-12-24 | 光半导体装置用引线框、其制造方法及光半导体装置 |
US13/168,192 US8338926B2 (en) | 2008-12-26 | 2011-06-24 | Lead frame for optical semiconductor devices, method of producing the same, and optical semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-332732 | 2008-12-26 | ||
JP2008332732 | 2008-12-26 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/168,192 Continuation US8338926B2 (en) | 2008-12-26 | 2011-06-24 | Lead frame for optical semiconductor devices, method of producing the same, and optical semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010074184A1 true WO2010074184A1 (ja) | 2010-07-01 |
Family
ID=42287790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/071504 WO2010074184A1 (ja) | 2008-12-26 | 2009-12-24 | 光半導体装置用リードフレーム、その製造方法および光半導体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8338926B2 (ja) |
EP (1) | EP2372800A4 (ja) |
JP (2) | JP4897981B2 (ja) |
KR (1) | KR101586523B1 (ja) |
CN (1) | CN102265417B (ja) |
TW (1) | TWI479704B (ja) |
WO (1) | WO2010074184A1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011122665A1 (ja) * | 2010-03-30 | 2011-10-06 | 大日本印刷株式会社 | Led用リードフレームまたは基板、半導体装置、およびled用リードフレームまたは基板の製造方法 |
JP2011222881A (ja) * | 2010-04-14 | 2011-11-04 | Takemi Akimoto | Ledパッケージ |
JP2012028630A (ja) * | 2010-07-26 | 2012-02-09 | Dainippon Printing Co Ltd | Led用リードフレームまたは基板およびその製造方法、ならびに半導体装置およびその製造方法 |
JP2012039109A (ja) * | 2010-07-16 | 2012-02-23 | Dainippon Printing Co Ltd | Led用リードフレームまたは基板、半導体装置、およびled用リードフレームまたは基板の製造方法 |
JP2012107263A (ja) * | 2010-11-15 | 2012-06-07 | Kyowa Densen Kk | メッキ構造及び被覆方法 |
JP2012122115A (ja) * | 2010-12-10 | 2012-06-28 | Mitsubishi Shindoh Co Ltd | 銅又は銅合金板へのAg−Snめっき方法及びその方法により製造されたAg−Snめっきが施された銅或いは銅合金板 |
JP2013207036A (ja) * | 2012-03-28 | 2013-10-07 | Dainippon Printing Co Ltd | Led素子搭載用基板及びその製造方法、並びにled素子搭載用基板を用いた半導体装置 |
JP2013236005A (ja) * | 2012-05-10 | 2013-11-21 | Dainippon Printing Co Ltd | Led用リードフレーム及び当該led用リードフレームを用いた半導体装置 |
US9773960B2 (en) | 2010-11-02 | 2017-09-26 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
JP2018029175A (ja) * | 2016-08-18 | 2018-02-22 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 多層電気接触素子 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9694562B2 (en) * | 2010-03-12 | 2017-07-04 | Xtalic Corporation | Coated articles and methods |
JP5985201B2 (ja) * | 2012-02-20 | 2016-09-06 | シャープ株式会社 | 発光装置および照明装置 |
KR101901890B1 (ko) * | 2012-09-28 | 2018-09-28 | 엘지이노텍 주식회사 | 발광 장치 |
KR102088267B1 (ko) * | 2012-10-05 | 2020-03-12 | 후루카와 덴키 고교 가부시키가이샤 | 은 반사막, 광반사 부재, 및 광반사 부재의 제조방법 |
US9385289B2 (en) * | 2012-11-28 | 2016-07-05 | Lumens Co., Ltd. | Light-emitting-device package and production method therefor |
DE102017115798A1 (de) | 2017-07-13 | 2019-01-17 | Alanod Gmbh & Co. Kg | Reflektierendes Verbundmaterial, insbesondere für oberflächenmontierte Bauelemente (SMD), und lichtemittierende Vorrichtung mit einem derartigen Verbundmaterial |
CN109473513A (zh) * | 2018-10-20 | 2019-03-15 | 木林森股份有限公司 | Led支架及led封装结构及led支架中铝材框架的表面处理方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61148883A (ja) | 1984-12-22 | 1986-07-07 | Toshiba Corp | 光半導体装置用リ−ドフレ−ム |
JP2005129970A (ja) | 2005-02-08 | 2005-05-19 | Matsushita Electric Ind Co Ltd | 半導体装置用リードフレーム |
JP2006303069A (ja) * | 2005-04-19 | 2006-11-02 | Sumitomo Metal Electronics Devices Inc | 発光素子搭載用パッケージ |
JP2007258647A (ja) * | 2006-03-27 | 2007-10-04 | Nichia Chem Ind Ltd | 半導体発光装置及び半導体発光素子 |
JP2008016674A (ja) | 2006-07-06 | 2008-01-24 | Matsushita Electric Works Ltd | 銀膜、銀膜の製造方法、led実装用基板、及びled実装用基板の製造方法 |
JP2008053564A (ja) * | 2006-08-25 | 2008-03-06 | Matsushita Electric Ind Co Ltd | 光半導体装置およびその製造方法 |
JP2008060344A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 半導体発光装置 |
JP2008091818A (ja) * | 2006-10-05 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 光半導体装置用リードフレームおよびこれを用いた光半導体装置、並びにこれらの製造方法 |
JP2009135355A (ja) * | 2007-12-03 | 2009-06-18 | Hitachi Cable Precision Co Ltd | リードフレーム及びその製造方法並びに受発光装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6114883A (ja) | 1984-06-27 | 1986-01-23 | 株式会社東芝 | 把持装置 |
JP2726434B2 (ja) * | 1988-06-06 | 1998-03-11 | 古河電気工業株式会社 | SnまたはSn合金被覆材料 |
JPH0681189A (ja) * | 1992-09-02 | 1994-03-22 | Mitsubishi Shindoh Co Ltd | 電気接続具製造用メッキ銅板またはメッキ銅合金板の製造法 |
JPH09223771A (ja) * | 1995-12-15 | 1997-08-26 | Furukawa Seimitsu Kinzoku Kogyo Kk | 電子部品用リード部材及びその製造方法 |
JPH09275182A (ja) * | 1996-04-02 | 1997-10-21 | Seiichi Serizawa | 半導体装置用リ−ドフレ−ム |
JP4211359B2 (ja) * | 2002-03-06 | 2009-01-21 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
WO2004064154A1 (en) * | 2003-01-16 | 2004-07-29 | Matsushita Electric Industrial Co., Ltd. | Lead frame for a semiconductor device |
JP4242194B2 (ja) * | 2003-04-10 | 2009-03-18 | シャープ株式会社 | 半導体発光装置およびその製造方法 |
JP3998703B2 (ja) * | 2004-05-27 | 2007-10-31 | 新光電気工業株式会社 | 半導体装置用リードフレーム |
TWI237409B (en) * | 2004-10-08 | 2005-08-01 | Kingbright Electronics Co Ltd | Method of fabricating light emitting diode (LED) |
JP4942331B2 (ja) * | 2005-11-25 | 2012-05-30 | スタンレー電気株式会社 | 半導体発光装置 |
JP4899899B2 (ja) * | 2007-02-02 | 2012-03-21 | トヨタ自動車株式会社 | 障害物認識装置及び方法 |
-
2009
- 2009-12-24 WO PCT/JP2009/071504 patent/WO2010074184A1/ja active Application Filing
- 2009-12-24 KR KR1020117014411A patent/KR101586523B1/ko not_active IP Right Cessation
- 2009-12-24 CN CN2009801517686A patent/CN102265417B/zh not_active Expired - Fee Related
- 2009-12-24 JP JP2010544137A patent/JP4897981B2/ja active Active
- 2009-12-24 EP EP09834981.4A patent/EP2372800A4/en not_active Withdrawn
- 2009-12-25 TW TW098144950A patent/TWI479704B/zh not_active IP Right Cessation
-
2011
- 2011-04-11 JP JP2011087432A patent/JP5546495B2/ja not_active Expired - Fee Related
- 2011-06-24 US US13/168,192 patent/US8338926B2/en not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61148883A (ja) | 1984-12-22 | 1986-07-07 | Toshiba Corp | 光半導体装置用リ−ドフレ−ム |
JP2005129970A (ja) | 2005-02-08 | 2005-05-19 | Matsushita Electric Ind Co Ltd | 半導体装置用リードフレーム |
JP2006303069A (ja) * | 2005-04-19 | 2006-11-02 | Sumitomo Metal Electronics Devices Inc | 発光素子搭載用パッケージ |
JP2007258647A (ja) * | 2006-03-27 | 2007-10-04 | Nichia Chem Ind Ltd | 半導体発光装置及び半導体発光素子 |
JP2008016674A (ja) | 2006-07-06 | 2008-01-24 | Matsushita Electric Works Ltd | 銀膜、銀膜の製造方法、led実装用基板、及びled実装用基板の製造方法 |
JP2008053564A (ja) * | 2006-08-25 | 2008-03-06 | Matsushita Electric Ind Co Ltd | 光半導体装置およびその製造方法 |
JP2008060344A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 半導体発光装置 |
JP2008091818A (ja) * | 2006-10-05 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 光半導体装置用リードフレームおよびこれを用いた光半導体装置、並びにこれらの製造方法 |
JP2009135355A (ja) * | 2007-12-03 | 2009-06-18 | Hitachi Cable Precision Co Ltd | リードフレーム及びその製造方法並びに受発光装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2372800A4 |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011122665A1 (ja) * | 2010-03-30 | 2011-10-06 | 大日本印刷株式会社 | Led用リードフレームまたは基板、半導体装置、およびled用リードフレームまたは基板の製造方法 |
KR101867106B1 (ko) * | 2010-03-30 | 2018-06-12 | 다이니폰 인사츠 가부시키가이샤 | Led용 수지 부착 리드 프레임, 반도체 장치, 반도체 장치의 제조 방법 및 led용 수지 부착 리드 프레임의 제조 방법 |
CN102804428A (zh) * | 2010-03-30 | 2012-11-28 | 大日本印刷株式会社 | Led用引线框或基板、半导体装置和led用引线框或基板的制造方法 |
KR20130007592A (ko) * | 2010-03-30 | 2013-01-18 | 다이니폰 인사츠 가부시키가이샤 | Led용 리드 프레임 또는 기판, 반도체 장치, 및 led용 리드 프레임 또는 기판의 제조 방법 |
US9966517B2 (en) | 2010-03-30 | 2018-05-08 | Dai Nippon Printing Co., Ltd. | LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate |
US9887331B2 (en) | 2010-03-30 | 2018-02-06 | Dai Nippon Printing Co., Ltd. | LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate |
US9263315B2 (en) | 2010-03-30 | 2016-02-16 | Dai Nippon Printing Co., Ltd. | LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate |
JP2011222881A (ja) * | 2010-04-14 | 2011-11-04 | Takemi Akimoto | Ledパッケージ |
JP2012039109A (ja) * | 2010-07-16 | 2012-02-23 | Dainippon Printing Co Ltd | Led用リードフレームまたは基板、半導体装置、およびled用リードフレームまたは基板の製造方法 |
JP2012028630A (ja) * | 2010-07-26 | 2012-02-09 | Dainippon Printing Co Ltd | Led用リードフレームまたは基板およびその製造方法、ならびに半導体装置およびその製造方法 |
US9773960B2 (en) | 2010-11-02 | 2017-09-26 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
JP2012107263A (ja) * | 2010-11-15 | 2012-06-07 | Kyowa Densen Kk | メッキ構造及び被覆方法 |
JP2012122115A (ja) * | 2010-12-10 | 2012-06-28 | Mitsubishi Shindoh Co Ltd | 銅又は銅合金板へのAg−Snめっき方法及びその方法により製造されたAg−Snめっきが施された銅或いは銅合金板 |
JP2013207036A (ja) * | 2012-03-28 | 2013-10-07 | Dainippon Printing Co Ltd | Led素子搭載用基板及びその製造方法、並びにled素子搭載用基板を用いた半導体装置 |
JP2013236005A (ja) * | 2012-05-10 | 2013-11-21 | Dainippon Printing Co Ltd | Led用リードフレーム及び当該led用リードフレームを用いた半導体装置 |
JP2018029175A (ja) * | 2016-08-18 | 2018-02-22 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 多層電気接触素子 |
Also Published As
Publication number | Publication date |
---|---|
US20110293926A1 (en) | 2011-12-01 |
JP4897981B2 (ja) | 2012-03-14 |
JP2011146741A (ja) | 2011-07-28 |
KR20110098921A (ko) | 2011-09-02 |
US8338926B2 (en) | 2012-12-25 |
EP2372800A4 (en) | 2014-05-14 |
EP2372800A1 (en) | 2011-10-05 |
CN102265417A (zh) | 2011-11-30 |
JPWO2010074184A1 (ja) | 2012-06-21 |
JP5546495B2 (ja) | 2014-07-09 |
KR101586523B1 (ko) | 2016-01-18 |
CN102265417B (zh) | 2013-10-23 |
TW201029139A (en) | 2010-08-01 |
TWI479704B (zh) | 2015-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4897981B2 (ja) | 光半導体装置用リードフレーム、その製造方法および光半導体装置 | |
JP4763094B2 (ja) | 光半導体装置用リードフレーム及びその製造方法 | |
JP4885309B2 (ja) | 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法および光半導体装置 | |
KR101718575B1 (ko) | 광반도체 장치용 리드 프레임, 광반도체 장치용 리드 프레임의 제조방법, 및 광반도체 장치 | |
JP5089795B2 (ja) | 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法、および光半導体装置 | |
WO2010150824A1 (ja) | 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法、および光半導体装置 | |
JP5503388B2 (ja) | Led用リードフレーム | |
JP5578960B2 (ja) | 光半導体装置用リードフレーム及びその製造方法 | |
JP5767521B2 (ja) | 光半導体装置用リードフレーム及びその製造方法 | |
JP6034233B2 (ja) | 光半導体装置用リードフレームとその製造方法、および光半導体装置 | |
JP2012151289A (ja) | 光半導体実装用基板、その製造方法、及び光半導体装置 | |
JP2011129658A (ja) | 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法、および光半導体装置 | |
JP5554155B2 (ja) | 光半導体装置用リードフレームおよび光半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980151768.6 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09834981 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010544137 Country of ref document: JP |
|
ENP | Entry into the national phase |
Ref document number: 20117014411 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
REEP | Request for entry into the european phase |
Ref document number: 2009834981 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2009834981 Country of ref document: EP |