WO2010060273A1 - Composition de solution de rinçage pour éliminer la résine photosensible - Google Patents

Composition de solution de rinçage pour éliminer la résine photosensible Download PDF

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Publication number
WO2010060273A1
WO2010060273A1 PCT/CN2009/001284 CN2009001284W WO2010060273A1 WO 2010060273 A1 WO2010060273 A1 WO 2010060273A1 CN 2009001284 W CN2009001284 W CN 2009001284W WO 2010060273 A1 WO2010060273 A1 WO 2010060273A1
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Prior art keywords
citrate
cleaning composition
ether
composition according
photoresist cleaning
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PCT/CN2009/001284
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English (en)
Chinese (zh)
Inventor
彭洪修
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安集微电子（上海）有限公司
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Priority to CN2009801483641A priority Critical patent/CN102227690A/zh
Publication of WO2010060273A1 publication Critical patent/WO2010060273A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/266—Esters or carbonates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
    • C23G1/18—Organic inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2068—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3445—Organic compounds containing sulfur containing sulfino groups, e.g. dimethyl sulfoxide
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur

Definitions

  • the present invention relates to a cleaning composition in a semiconductor manufacturing process, and in particular to a photoresist cleaning composition.
  • a photoresist coating is first formed on a surface of a metal such as silicon dioxide, Cu (copper), or a low-k material, and exposed and developed using a suitable mask, depending on the photoresist used.
  • the photoresist is removed from the exposed or unexposed portions, a photoresist pattern is formed at a desired portion, and then plasma etching or reactive gas etching is performed on the photoresist pattern to perform pattern transfer.
  • the low temperature and fast cleaning process is an important direction for the development of semiconductor wafer fabrication processes. Negative photoresists with thicknesses above 20 ⁇ are gradually being used in semiconductor wafer fabrication processes.
  • the negative photoresist having a cross-linked network structure after exposure and etching is especially a thick film negative photoresist.
  • cleaning agents In the chemical cleaning of photoresists on semiconductor wafers, cleaning agents often cause corrosion of the wafer pattern and substrate. Especially in the process of removing photoresist and etching residues by chemical cleaning agents, corrosion of metals (especially active metals such as aluminum and copper) is a common and very serious problem, which often leads to a significant decrease in wafer yield. .
  • the photoresist cleaning composition is mainly composed of a strong base, a polar organic solvent and/or water, etc., and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in a cleaning agent or rinsing the semiconductor wafer with a cleaning agent.
  • Strong bases such as potassium hydroxide, quaternary ammonium hydroxides and alcohol amines, etc., are capable of dissolving the photoresist residues produced by the photoresist and/or etching.
  • the cleaning agent When the content of the strong base is too low, the cleaning agent has insufficient ability to remove the photoresist residue generated by the photoresist and/or the etching; however, when the content of the strong alkali is too high, the cleaning agent is liable to cause corrosion of the wafer pattern and the substrate.
  • a cleaning agent containing potassium hydroxide or a quaternary ammonium hydroxide has a better ability to remove photoresist residues generated by photoresist and/or etching than a cleaning agent composed of an alcohol amine.
  • the cleaning agent of potassium hydroxide is liable to cause corrosion of the wafer pattern and the substrate, and the removal of the photoresist is mainly in a peeling manner, so that the photoresist forms a chip-like peeling or a gel-like swelling, which easily causes the photoresist. Deposition or adhesion on the surface of the wafer, even leading to damage to the wafer pattern.
  • the cleaning agent containing the quaternary hinge hydroxide has both stripping and dissolving effects on the photoresist, and does not cause deposition or adhesion of the photoresist on the surface of the wafer.
  • the polar organic solvent is capable of dissolving the photoresist residues generated by the photoresist and/or etching, and improving the cleaning ability of the chemical cleaning agent for organic substances.
  • the cleaning agent has insufficient ability to remove the photoresist residue generated by the photoresist and/or the etching; but when the content of the polar organic solvent is too high, the strong alkali content in the cleaning agent Correspondingly, the ability of the cleaning agent to remove photoresist residues from photoresist and/or etching is reduced.
  • a photoresist cleaning agent composed of an alkanolamine and an organic polar solvent is proposed in US 4,761,251.
  • the semiconductor wafer was immersed in the cleaning agent, and the positive photoresist on the wafer was removed at 95 °C.
  • the cleaning agent does not contain water, and its cleaning ability for negative photoresist is insufficient.
  • a photoresist cleaning agent composed of an alcohol amine, a water-soluble organic solvent, water, an organic phenol compound, a triazole compound, and a silicone antimony surfactant is proposed in U.S. Patent No. 6,140,027.
  • the semiconductor wafer is immersed in the cleaning agent, and the photoresist on the wafer and the photoresist residue generated by the etching are removed at 20 to 50 °C.
  • the cleaning agent uses an organic phenol compound and a triazole compound as corrosion inhibitors for inhibiting metal corrosion.
  • Organic phenolic compounds are harmful to the human body and cause environmental pollution.
  • the cleaning agent has insufficient cleaning ability for the negative photoresist.
  • Lithography consisting of potassium hydroxide, propylene glycol ether, N-methylpyrrolidone, surfactant, 1,3-butanediol, diglycolamine and water in an amount of less than 1% by mass is proposed in US Pat. No. 5,962,197.
  • Glue cleaner The semiconductor wafer is immersed in the cleaning agent, and the photoresist on the wafer is removed at 90 to 110 °C.
  • the cleaning agent contains potassium hydroxide, which has high corrosion to the wafer substrate and is formed by stripping the photoresist.
  • the flaky exfoliate or colloidal swell may deposit or stick on the surface of the wafer, causing residue of the photoresist and damage to the wafer pattern.
  • a photoresist cleaning agent consisting of tetramethylammonium hydroxide, N-methylmorpholine-N-oxide, water and 2-mercaptobenzimidazole is proposed in WO2004059700.
  • the semiconductor wafer was immersed in the cleaning agent, and the photoresist on the wafer was removed at 70 °C.
  • the cleaning agent uses N-methylmorpholine-N-oxide as an oxidizing agent and 2-mercaptobenzimidazole as a metal corrosion inhibitor.
  • the cleaning agent needs to clean the photoresist at a higher temperature, and the etching of the semiconductor wafer pattern and the substrate is slightly higher, and the cleaning ability of the photoresist is slightly insufficient.
  • a photoresist cleaning agent consisting of quaternary ammonium hydroxide, dimethyl sulfoxide, 1,3,-dimethyl-2-imidazolidinone and water is proposed in U.S. Patent No. 6,040,117.
  • the semiconductor wafer is immersed in the cleaning agent, and a photoresist having a thickness of ⁇ or more on the metal (gold, copper, lead or nickel) substrate is removed at 40 to 95 °C.
  • the cleaning agent uses 1,3'-dimethyl-2-imidazolium, which is relatively expensive, as an organic co-solvent, and does not contain a corrosion inhibitor that inhibits corrosion of metals, especially active metals such as aluminum.
  • the cleaning agent needs to clean the photoresist at a relatively high temperature, and the etching of the semiconductor wafer pattern and the substrate is slightly higher.
  • a photoresist cleaning agent composed of a quaternary ammonium hydroxide, a water-soluble organic solvent, an organic amine, a dihydric alcohol, and water is proposed in JP2001215736.
  • the semiconductor wafer was immersed in the cleaning agent, and a photoresist having a thickness of 20 ⁇ m to 40 ⁇ m on the wafer was removed at 20 to 90 °C.
  • the cleaning agent uses a glycol as a corrosion inhibitor for inhibiting metal corrosion, but the diol has a weak ability to inhibit metal corrosion and reduces the cleaning ability of the cleaning agent for the photoresist, especially the negative photoresist.
  • the cleaning agent has a slightly higher corrosion of the semiconductor wafer pattern and the substrate.
  • a photoresist cleaning agent consisting of quaternary ammonium hydroxide, ⁇ -methylpyrrolidone, diethanolamine or triethanolamine, water and methanol or ethanol is proposed in JP2004093678. Immersing the semiconductor wafer into the cleaning In the agent, a photoresist having a thickness of ⁇ or more on the wafer is removed at 15 to 80 °C.
  • the cleaning agent uses methanol or ethanol as a solubilizer for the quaternary ammonium hydroxide, but the flash point of methanol or ethanol is too low, and the cleaning ability of the cleaning agent for the photoresist, especially the negative photoresist, is lowered.
  • the cleaning agent does not contain a corrosion inhibitor that inhibits corrosion of metals such as more reactive metals such as aluminum and copper.
  • the cleaning agent has a slightly higher corrosion of the semiconductor wafer pattern and the substrate.
  • the existing photoresist cleaning agent has insufficient cleaning ability for a photoresist having a relatively high thickness, or is highly corrosive to a semiconductor wafer pattern and a substrate, and has a large defect.
  • the technical problem to be solved by the present invention is to provide a kind of light for the defects that the existing photoresist cleaning agent has insufficient cleaning ability for the thick film photoresist, is highly corrosive to the semiconductor wafer pattern and the substrate, and is harmful to the environment.
  • a photoresist cleaning composition which has strong cleaning ability and is less corrosive to semiconductor wafer patterns and substrates and is environmentally friendly.
  • a photoresist cleaning composition comprising quaternary ammonium hydroxide, water, mercapto diol aryl ether, dimethyl sulfoxide and corrosion inhibitor, wherein At least one of the corrosion inhibitors is selected from the group consisting of citric acid, citrate, and citrate.
  • the citric acid, citric acid ester and citrate are preferably selected from the group consisting of citric acid, 2-hydroxy citric acid, trimethyl citrate, triethyl citrate, tripropyl citrate, and lemon.
  • citric acid 2-hydroxycitric acid, lauryl citrate, glyceryl citrate, ethanolamine citrate, triethanolamine citrate, diglycol citrate, tetramethylammonium citrate, citric acid
  • the content thereof is preferably from 0.01 to 10% by weight, more preferably from 0.1 to 5% by weight.
  • the corrosion inhibitor selected from the group consisting of citric acid, citric acid ester and citrate exhibits good inhibition to metal corrosion and is easily biodegradable, which is beneficial to environmental protection.
  • the quaternary ammonium hydroxide is preferably selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and benzyltrimethylhydroxide.
  • One or more of ammonium more preferably one or more selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide and tetrabutylammonium hydroxide, most preferably tetramethylammonium hydroxide .
  • the content thereof is preferably from 0.1 to 10% by weight, more preferably from 1 to 5% by weight.
  • the water content is preferably from 0.2 to 15% by weight, more preferably from 0.5 to 10% by weight.
  • the mercapto glycol aryl ether can improve the solubility of the quaternary ammonium hydroxide in dimethyl sulfoxide, and the increase of the quaternary ammonium hydroxide content is advantageous for improving the cleaning agent combination in the present invention.
  • the mercapto diol aryl ether is less harmful to the environment than the ethylene glycol alkyl ether and ethylene glycol aryl ether used in the conventional photoresist cleaning agent.
  • the mercapto diol in the mercapto diol aryl ether has a carbon number of from 3 to 18.
  • the mercapto glycol aryl ether is preferably selected from the group consisting of propylene glycol monophenyl ether, isopropyl glycol monophenyl ether, diethylene glycol monophenyl ether, dipropylene glycol monophenyl ether, diisopropyl glycol monophenyl.
  • Ether triethylene glycol monophenyl ether, tripropylene glycol monophenyl ether, triisopropyl glycol monophenyl ether, hexadeethylene glycol monophenyl ether, hexapropylene glycol monophenyl ether, hexapropylene glycol monobenzene
  • a group of ether propylene glycol monobenzyl ether, isopropyl glycol monobenzyl ether and hexanediol mononaphthyl ether; more preferably selected from the group consisting of propylene glycol monophenyl ether, isopropyl glycol monophenyl ether, dipropylene glycol
  • the content is preferably from 0.1 to 65 wt%, more preferably from 0.5 to 20.0 wt%.
  • the content of the dimethyl sulfoxide is preferably from 1 to 98% by weight, more preferably from 30 to 90% by weight.
  • the photoresist cleaning composition may further contain one of a polar organic co-solvent, a surfactant, and other corrosion inhibitors other than citric acid, citrate and citrate.
  • a polar organic co-solvent content is preferably 50% by weight, but does not include 0% by weight, more preferably 5 to 30% by weight
  • the surfactant content is preferably 5% by weight, but does not include 0wt%, more preferably 0.05 ⁇ 3.0wt%
  • the content of the corrosion inhibitor other than the corrosion inhibitors of citric acid, citrate and citrate is preferably 5% by weight, but not including 0% by weight. , more preferably 0.05-3.0wt
  • the polar organic co-solvent is preferably one or more selected from the group consisting of sulfoxide, sulfone, imidazolium, alcohol amine and mercaptodiol monodecyl ether.
  • the sulfoxide is preferably diethyl sulfoxide and/or methyl ethyl sulfoxide; and the sulfone is preferably one or more selected from the group consisting of methyl sulfone, ethyl sulfone and sulfolane.
  • the imidazolium is preferably selected from the group consisting of 2-imidazolium, 1,3-dimethyl-2-imidazolium and 1,3-diethyl-2-imidazolidinone.
  • the alcohol amine is preferably selected from the group consisting of monoethanolamine, triethanolamine, diglycolamine, isopropanol
  • an amine, methylethanolamine, methyldiethanolamine, dimethylethanolamine and hydroxyethylethylenediamine more preferably selected from the group consisting of monoethanolamine, triethanolamine, diglycolamine and methylethanolamine
  • the alkyl glycol monodecyl ethers are preferably selected from the group consisting of diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, and propylene glycol monobutyl ether.
  • dipropylene glycol monomethyl ether dipropylene glycol monoethyl ether and dipropylene glycol monobutyl ether, more preferably selected from the group consisting of diethylene glycol monomethyl ether, dipropylene glycol monomethyl ether and dipropylene One or more alcohols monobutyl ether.
  • the surfactant is preferably selected from one or more of polyethylene glycol, polyvinylpyrrolidone and polyoxyethylene ether, more preferably polyvinylpyrrolidone and/or polyoxygen. Vinyl ether.
  • the number average molecular weight of the surfactant is preferably from 500 to 20,000, more preferably from 1,000 to 10,000.
  • the corrosion inhibitor other than citric acid, citrate and citrate is preferably selected from the group consisting of an alcohol amine, an azole, a phosphonic acid and a polyacrylic corrosion inhibitor.
  • the alcohol amine corrosion inhibitor is preferably selected from the group consisting of monoethanolamine, triethanolamine, diglycolamine, isopropanolamine, methylethanolamine, methyldiethanolamine, dimethylethanolamine and hydroxyethylethyl
  • the diamines more preferably one or more selected from the group consisting of monoethanolamine, triethanolamine, diglycolamine, and methylethanolamine
  • the azole inhibitor is preferably selected from the group consisting of Benzotriazole, methylbenzotriazole, benzotriazole diethanolamine salt, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-mercaptobenzoxazole, dimercaptothiadiazole , 3-amino-1,2,4-
  • tetramethylenephosphonic acid and diethylenetriamine penta methylene phosphonic acid more preferably selected from the group consisting of 2-phosphonium bromide-1,2,4-tricarboxylic acid, ethylenediamine
  • tetramethylenephosphonic acid and diethylenetriamine penta methylene phosphonic acid are preferably selected from the group consisting of 2-phosphonium bromide-1,2,4-tricarboxylic acid, ethylenediamine
  • tetramethylenephosphonic acid and diethylenetriamine penta methylene phosphonic acid more preferably selected from the group consisting of 2-phosphonium bromide-1,2,4-tricarboxylic acid, ethylenediamine
  • tetramethylenephosphonic acid and diethylenetriamine penta methylene phosphonic acid are preferably selected from the group consisting of 2-phosphonium bromide-1,2,4-tricarboxylic acid, ethylenediamine
  • the polyacrylic corrosion inhibitor is preferably selected from the group consisting of acrylic polymers and copolymers thereof, methacrylic polymers and copolymers thereof, alcohol amine salts of acrylic polymers, and methacrylic polymers. More preferably one or more of an alcoholamine salt, a polyoxyethylene-modified acrylic polymer, an ester thereof and an alkanolammonium salt, a polyoxyethylene-modified methacrylic acid polymer, and an ester thereof and an alkanolammonium salt.
  • the polyacrylic corrosion inhibitor preferably has a number average molecular weight of from 500 to 100,000, more preferably from 1,000 to 50,000.
  • the polyacrylic corrosion inhibitor exhibits a strong inhibitory effect on the corrosion of metals, especially aluminum.
  • the reagents and starting materials used in the present invention are commercially available.
  • the photoresist cleaning composition of the present invention can be obtained by simply mixing the components described above.
  • the photoresist cleaner composition of the present invention can be used over a wide temperature range (between 20 and 85 ° C).
  • the cleaning method can be referred to the following steps: The semiconductor wafer containing the photoresist is immersed in the cleaning composition, slowly shaken at 20 to 85 ° C with a constant temperature oscillator, then washed with deionized water and then dried with high purity nitrogen.
  • the photoresist cleaning composition of the present invention can relatively quickly clean photoresist and other etching residues having a thickness of 20 ⁇ m or more on a metal, metal alloy or dielectric substrate.
  • the alkyl diol aryl ether contained in the photoresist cleaning composition of the present invention can improve the solubility of the quaternary ammonium hydroxide in dimethyl sulfoxide, and the increase in the quaternary ammonium hydroxide content is advantageous.
  • the cleaning ability of the cleaning composition of the present invention to a photoresist, especially a highly cross-linked negative photoresist, is improved.
  • the mercapto diol aryl ether contained in the photoresist cleaning composition of the present invention exhibits a good inhibitory effect on corrosion of a metal such as copper.
  • the photoresist cleaning composition of the present invention exhibits extremely weak corrosiveness to non-metal materials such as silica.
  • the corrosion inhibitor selected from the group consisting of citric acid, citrate and citrate contained in the photoresist cleaning composition of the present invention exhibits a good inhibitory effect on corrosion of a metal, and can effectively suppress wafer patterns and bases. Corrosion of dark spots (pitting) on the material.
  • the corrosion inhibitor selected from the group consisting of citric acid, citric acid ester and citrate contained in the photoresist cleaning composition of the present invention is easily biodegradable and is environmentally friendly.
  • the polyacrylic corrosion inhibitor which can be contained in the photoresist cleaning composition of the present invention exhibits an extremely strong inhibitory effect on corrosion of metal, particularly aluminum, and can further suppress corrosion of the wafer pattern and the substrate.
  • the photoresist cleaning composition of the present invention can dissolve and remove a high-crosslinking thick film photoresist (especially a thick film negative photoresist) on a semiconductor wafer and other etching residues to avoid light.
  • a high-crosslinking thick film photoresist especially a thick film negative photoresist
  • the deposition or adhesion of the glue on the surface of the wafer without causing corrosion or damage to the wafer pattern.
  • the photoresist cleaning composition of the present invention can be used over a wide temperature range (20-85 ° C).
  • Methyl sulfone monoethanolamine tripropylene ethoxylate (tetrabutyl)
  • Polyacrylic acid (number average molecular weight is 500) acetyl lemon sulfolane citrate
  • Citric acid methacrylic acid-horse hydroxide 2.5 4.5 alcohol single 65 9.45 1
  • Trihexyl ester acid copolymer (number of ammonium 0.05
  • Phenyl average molecular weight is ether 1000
  • Ammonium hexyl ester is 10000
  • Polyacrylic acid triethanolamine salt (number average 0.15 sub-quantity 20000) citric acid
  • Ammonium molecular weight is 500
  • Ketone (number average molecular weight 0.09 is 20000) citric acid
  • Amino ester Dimercaptothiadiazole 1.2 Diisoethylene glycol (number average tetraethyl propylene two molecular weight 0.5 KOH 2.5 10 Alcohol single 5 72.3 20000)
  • Ethanolamine salt (number average 0.4 molecular weight is
  • Alcoholamine 0.6 (number average molecular weight is citrate 8000) diglycolamine 2 diethylene glycol monoethyl
  • the amount is 75000) Ammonium Dimethylethanolamine 0.1 Diethylene glycol monomethyl citrate 5
  • Tetrabutyl 1 ethanolamine salt (number average 0.5 ammonium molecular weight is
  • Ethanolamine salt (number average 0.5
  • Comparative Cleaning Agent Compositions 1, 7, and Cleaning Agent Compositions 27 to 42 of the Invention Table 2 shows comparative cleaning agent compositions ⁇ 7' and the cleaning composition compositions 27-42 of the present invention.
  • the formulations were prepared by simply mixing uniformly according to the components listed in Table 2 and their contents, that is, each detergent composition was prepared.
  • Oxide water phenyl citrate sulfone alcohol amine homotrienic acid trinitrogen acid (number average agent sulfone)
  • Ammonium ether ⁇ quantity is molecular weight
  • the comparative cleaning composition ⁇ 6' in Table 2 and the cleaning composition 27 ⁇ 42 of the present invention were used to clean the three blank wafers and the semiconductor wafer containing the photoresist, and the test results are shown in Table 3.
  • the comparative cleaning composition ⁇ 6' in Table 2 and the cleaning composition 27 ⁇ 42 of the present invention were used to clean a blank Cu wafer and test its corrosion to metallic Cu. Test methods and conditions: 4 X 4 cm blank Cu wafer was immersed in the cleaning agent composition, shaken at 20 to 85 ° C for 60 minutes using a constant temperature oscillator, then washed with deionized water and then dried with high purity nitrogen, using four The polar probe instrument was used to measure the change in surface resistance of the blank Cu wafer before and after etching. The results are shown in Table 3.
  • the comparative cleaning composition ⁇ 6' in Table 2 and the cleaning composition 27 ⁇ 42 of the present invention were used to clean the blank A1 wafer and test its corrosion to the metal A1.
  • Test methods and conditions 4 4 4 cm blank A1 wafer was immersed in the cleaning composition, shaken at 20 to 85 ° C for 60 minutes using a constant temperature oscillator, then washed with deionized water and then dried with high purity nitrogen, using four The polar probe instrument was used to measure the change in surface resistance of the blank A1 wafer before and after etching. The results are shown in Table 3.
  • the comparative cleaning composition ⁇ 6' in Table 2 and the cleaning composition 27 ⁇ 42 of the present invention were used to clean blank tetraethoxysilane (TEOS) wafers and tested for corrosion of non-metallic TEOS. happening. Test Methods and Conditions: A 4 X 4 cm blank TEOS wafer was dipped into the cleaning composition, shaken at 20 to 85 ° C for 60 minutes using a constant temperature oscillator, then washed with deionized water and then dried with high purity nitrogen. Determination of TEOS thickness before and after cleaning of blank TEOS wafers using Nanospec6100 thickness gauge The change in degree is calculated and the results are shown in Table 3.
  • the comparative cleaning composition ⁇ 6' in Table 2 and the cleaning composition 27 ⁇ 42 of the present invention are used to clean the photoresist on the semiconductor wafer.
  • the cleaning method is as follows: A semiconductor wafer (containing a pattern) containing a negative acrylate-based photoresist (having a thickness of about 60 ⁇ m and exposed and etched) is immersed in the cleaning composition shown in Table 2, at 20 The mixture was shaken at ⁇ 85 ° C for 1 to 30 minutes using a constant temperature oscillator, then washed with deionized water and then dried with high purity nitrogen.
  • the cleaning effect of the photoresist and the corrosion of the wafer pattern by the cleaning composition are shown in Table 3.
  • Condition no corrosion
  • condition removal
  • Table 4 The cleaning composition of the present invention in Table 2 32 ⁇ 42 pairs of negative acrylates
  • the cleaning of the present invention is compared with the comparative cleaning agent composition ⁇ 6.
  • the lotion compositions 27 to 42 have good cleaning ability for thick film negative acrylate photoresists, wide temperature range, low corrosivity to metal Cu and A1 and non-metal TEOS, and no corrosion to wafer patterns. Or damaged.
  • the photoresist cleaning composition of the present invention can remove a thick film photoresist and other etching residues of 20 ⁇ m or more at 20 to 85 ° C, and contains a mercapto diol.
  • a base ether and a corrosion inhibitor selected from the group consisting of citric acid, citrate and citrate can form a protective film on the surface of the wafer pattern and the substrate to prevent attack of the wafer pattern and the substrate by halogen atoms, hydroxide ions, and the like. , thereby reducing the corrosion of the wafer pattern and the substrate; in particular, the corrosion inhibitor selected from the group consisting of citric acid, citrate and citrate exhibits a good inhibition of corrosion of the metal, and can effectively suppress the wafer pattern and the base.
  • the photoresist cleaner composition of the present invention contains a corrosion inhibitor selected from the group consisting of citric acid, citrate and citrate, which is easily biodegradable and is environmentally friendly.
  • the photoresist cleaning composition of the present invention exhibits extremely weak corrosiveness to non-metallic materials such as silica.
  • the polyacrylic corrosion inhibitor which can be contained in the photoresist cleaning composition of the present invention exhibits an extremely strong inhibitory effect on corrosion of metals, particularly aluminum, and can further suppress corrosion of the wafer pattern and the substrate.
  • the photoresist cleaning composition of the present invention can dissolve and remove a high-crosslinking thick film negative photoresist on a semiconductor wafer, thereby avoiding deposition or adhesion of the photoresist on the surface of the wafer without causing wafer pattern and Corrosion or damage to the substrate.

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Abstract

La présente invention concerne une composition de solution de rinçage pour éliminer la résine photosensible comportant de l’hydroxyde d’ammonium quaternaire, de l’eau, de l’éther de glycol d’alkyle aryle, du sulfoxyde de diméthyle et un inhibiteur de corrosion constitué par au moins un parmi l’acide citrique, l’ester de citrate et le sel de citrate. Le glycol d’alkyle de l’éther de glycol d’alkyle aryle comprend 3 à 18 atomes de carbone. La composition de solution de rinçage peut également comporter un co-solvant organique polaire, un tensioactif et/ou un autre inhibiteur de corrosion. La composition de solution de rinçage pour éliminer la résine photosensible peut nettoyer une résine photosensible de plus de 20μm d’épaisseur (en particulier une résine photosensible négative de couche épaisse) et d’autres résidus de gravure sur un métal, un alliage de métal ou un substrat diélectrique, et présente un faible taux de microdécapage pour des métaux tels que Al et Cu, et des non métaux tel que SiO2. La composition de solution de rinçage peut être utilisée dans le domaine de la micro-électronique pour le nettoyage de tranche semi-conductrice.
PCT/CN2009/001284 2008-11-28 2009-11-19 Composition de solution de rinçage pour éliminer la résine photosensible WO2010060273A1 (fr)

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WO2012168485A1 (fr) * 2011-06-09 2012-12-13 Technic France Composition de solutions et conditions d'utilisation permettant l'élimination et la dissolution complète de résines photosensibles
CN103571664A (zh) * 2013-10-31 2014-02-12 合肥中南光电有限公司 一种环保太阳能硅片清洗剂及其制备方法
EP2892967A4 (fr) * 2012-09-07 2016-02-24 Cabot Microelectronics Corp Composition et procédé de polissage employant une polypyrrolidone

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CN102477359B (zh) * 2010-11-26 2015-12-02 安集微电子（上海）有限公司 一种化学机械抛光清洗液
CN102012645A (zh) * 2010-12-24 2011-04-13 东莞市智高化学原料有限公司 一种光刻胶剥离液
CN102533474B (zh) * 2010-12-30 2015-09-16 安集微电子（上海）有限公司 一种清洗液及其清洗方法
CN103513524A (zh) * 2013-09-25 2014-01-15 杨桂望 半导体去除剂
CN104656382A (zh) * 2015-02-12 2015-05-27 陕西莱特光电材料股份有限公司 一种有效去除led芯片光刻胶的剥离液及其剥离方法
DE102015210481A1 (de) * 2015-06-09 2016-12-15 Henkel Ag & Co. Kgaa Verwendung von Zitronensäureestern als Korrosionsinhibitor in alkoholischen, als Aerosol versprühbaren kosmetischen Zusammensetzungen
CN105316120A (zh) * 2015-11-24 2016-02-10 苏州盖德精细材料有限公司 一种通用型胶类溶解剂组合物及其制备方法
CN105441200A (zh) * 2015-12-04 2016-03-30 三达奥克化学股份有限公司 半导体硅片脱胶清洗液及生产方法
CN109375482A (zh) * 2018-11-01 2019-02-22 博罗县东明新材料研究所 Pcb显影液及其制备方法
CN113741158A (zh) * 2020-05-29 2021-12-03 昆山欣谷微电子材料有限公司 一种水系剥离液组合物及使用方法
CN113568287B (zh) * 2021-06-10 2023-07-04 江阴润玛电子材料股份有限公司 一种柔性面板用光刻胶清洗剂及其生产工艺

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