CN113430065B - 抗反射涂层清洗及刻蚀后残留物去除组合物、制备方法及用途 - Google Patents
抗反射涂层清洗及刻蚀后残留物去除组合物、制备方法及用途 Download PDFInfo
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- CN113430065B CN113430065B CN202010210656.1A CN202010210656A CN113430065B CN 113430065 B CN113430065 B CN 113430065B CN 202010210656 A CN202010210656 A CN 202010210656A CN 113430065 B CN113430065 B CN 113430065B
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- etching
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- 238000004140 cleaning Methods 0.000 title claims abstract description 33
- 238000005530 etching Methods 0.000 title claims abstract description 14
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- 239000011248 coating agent Substances 0.000 title abstract description 6
- 238000000576 coating method Methods 0.000 title abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 21
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- 235000019437 butane-1,3-diol Nutrition 0.000 description 1
- INDXRDWMTVLQID-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO.OCCCCO INDXRDWMTVLQID-UHFFFAOYSA-N 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- XPFVYQJUAUNWIW-UHFFFAOYSA-N furfuryl alcohol Chemical compound OCC1=CC=CO1 XPFVYQJUAUNWIW-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 229960005152 pentetrazol Drugs 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- OJTDGPLHRSZIAV-UHFFFAOYSA-N propane-1,2-diol Chemical compound CC(O)CO.CC(O)CO OJTDGPLHRSZIAV-UHFFFAOYSA-N 0.000 description 1
- SQBYOEGDVPZABK-UHFFFAOYSA-N pyrazolo[4,3-b]pyridin-1-amine Chemical compound C1=CC=C2N(N)N=CC2=N1 SQBYOEGDVPZABK-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- LDGFRUUNCRYSQK-UHFFFAOYSA-N triazin-4-ylmethanediamine Chemical compound NC(N)C1=CC=NN=N1 LDGFRUUNCRYSQK-UHFFFAOYSA-N 0.000 description 1
- MPSUGQWRVNRJEE-UHFFFAOYSA-N triazol-1-amine Chemical compound NN1C=CN=N1 MPSUGQWRVNRJEE-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/722—Ethers of polyoxyalkylene glycols having mixed oxyalkylene groups; Polyalkoxylated fatty alcohols or polyalkoxylated alkylaryl alcohols with mixed oxyalkylele groups
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2068—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Chemical & Material Sciences (AREA)
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- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本发明公开了一种抗反射涂层清洗及刻蚀后残留物去除组合物、制备方法及用途。该组合物,其由下述原料制得,所述的原料包括以下质量分数的组分:0.1%‑4%的氟化物、0.5%‑6%的季铵碱、0.005%‑3%的螯合剂、0.005%‑3%的缓蚀剂、10%‑30%的有机胺、0.005%‑3%的表面活性剂、0.005%‑2%的钝化剂、5%‑50%的有机溶剂和余量的水;其中,所述的表面活性剂为EO‑PO聚合物L31,所述的钝化剂为1‑(苯并三氮唑‑1‑甲基)‑1‑(2‑甲基苯并咪唑)。本发明的组合物对对多种金属材料、介电材料及SARC材料缓蚀性强,清洗效果佳。
Description
技术领域
本发明涉及一种抗反射涂层清洗及刻蚀后残留物去除组合物、制备方法及用途。
背景技术
芯片制造工艺中,DUV光刻是较为先进的光刻技术,DUV波长的高反射性导致将DUV辐照反射回光致抗蚀剂中,从而在光致抗蚀剂层中产生驻波。驻波在光致抗蚀剂中进一步触发光化学反应,引起不均匀的光致抗蚀剂暴露,包括不期望暴露于辐照的掩模部分,这导致线宽、间隔和其它临界尺寸的变化。了解决透射性和反射性问题,研制了双层和三层光致抗蚀剂、底部抗反射涂层(BARCs)和牺牲性抗反射涂层(SARCs),在应用光致抗蚀剂前将它们应用到基底上。所有这些抗反射涂层都对在典型的双镶嵌集成中遇到的拓扑晶片表面有平整化作用,而且都将UV发色团引入到将吸收入射UV辐照的旋涂聚合物基质中。
在芯片制造技术中,铜互联等离子刻蚀后残余物清洗液以含氟清洗液为主。随着技术节点的不断前进,越来越多的材料被引入,如钛、钨、氮化钛等金属材料,以及低k介质材料等,进而对传统的含氟清洗液与多种材料的兼容性形成挑战。含氟清洗液在提供ARC去除时,需兼顾对金属材料(例如Co、Cu、W)和介质材料(例如TEOS、SiN、高k、低k)的刻蚀相容性,不能对这些材料造成损失。
发明内容
本发明要解决的技术问题是为了克服现有的用于其上具有抗反射材料及/或刻蚀后包含残留物的微电子装置清洗液对金属材料及介质材料的兼容性和缓蚀性能差,清洗效果不佳等缺陷,而提供了一种抗反射涂层清洗及刻蚀后残留物去除组合物、制备方法及用途。本发明的组合物对多种金属材料、介电材料及SARC材料缓蚀性强,清洗效果佳。
本发明通过以下技术方案来解决上述技术问题。
本发明提供了一种组合物,其由下述原料制得,所述的原料包括以下质量分数的组分:0.1%-4%的氟化物、0.5%-6%的季铵碱、0.005%-3%的螯合剂、0.005%-3%的缓蚀剂、10%-30%的有机胺、0.005%-3%的表面活性剂、0.005%-2%的钝化剂、5%-50%的有机溶剂和余量的水,所述的质量分数为各组分质量占原料的总质量的百分比;
其中,所述的表面活性剂为EO-PO聚合物L31,所述的钝化剂为1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)。
所述的组合物中,所述的氟化物可为本领域常规使用的氟化物,优选氢氟酸、氟化铵、四甲基氟化铵、氟化氢铵、氟硅酸和氟化钠中的一种或多种,更优选为氟化铵和/或氟化氢铵。
所述的组合物中,所述的氟化物的质量分数可为0.1%-3%,优选0.5%-3%(例如0.5%、1%或3%)。
所述的组合物中,所述的季铵碱可为本领域常规使用的季铵碱,优选四甲基氢氧化铵、四丙基氢氧化铵、四丁基氢氧化铵、四乙基氢氧化铵(TEAH)、苄基三甲基氢氧化铵(BTAH)、胆碱、(2-羟基乙基)三甲基氢氧化铵、三(2-羟乙基)甲基氢氧化铵、单乙醇胺(MEA)、二甘醇胺(DGA)、三乙醇胺(TEA)、异丁醇胺、异丙醇胺、四丁基氢氧化(TBPH)磷和四甲基胍中的一种或多种,更优选四甲基氢氧化铵和/或胆碱。
所述的组合物中,所述的季铵碱的质量分数可为0.5%-5%,优选1%-5%(例如1%、2.5%或5%)。
所述的组合物中,所述的螯合剂可为本领域常规使用的螯合剂,优选1,2-环己二胺-N,N,N',N'-四乙酸(CDTA)、乙二胺四乙酸、次氮基三乙酸、二亚乙基三胺五乙酸、1,4,7,10-四氮杂环十二烷-1,4,7,10-四乙酸、乙二醇四乙酸(EGTA)、1,2-双(邻氨基苯氧基)乙烷-N,N,N',N'-四乙酸、N-{2-[双(羧甲基)氨基]乙基}-N-(2-羟乙基)甘氨酸(HEDTA)、乙二胺-N,N'-双(2-羟基苯乙酸)(EDDHA)、二氧杂八亚甲基二氮基四乙酸(DOCTA)和三亚乙基四胺六乙酸(TTHA)中的一种或多种,更优选乙二胺四乙酸和/或1,2-环己二胺-N,N,N',N'-四乙酸(CDTA)。
所述的组合物中,所述的螯合剂的质量分数可为0.005%-2%,优选0.01%-2%(例如0.01%、0.5%、1%或2%)。
所述的组合物中,所述的缓蚀剂可为本领域常规使用的缓蚀剂,优选苯并***(BTA)、甲苯***、5-苯基-苯并***、5-硝基-苯并***、3-氨基-5-巯基-1,2,4-***、1-氨基-1,2,4-***、羟苯并***、2-(5-氨基-戊基)-苯并***、1-氨基-1,2,3-***、1-氨基-5-甲基-1,2,3-***、3-氨基-1,2,4-***、3-巯基-1,2,4-***、3-异丙基-1,2,4-***、5-苯硫醇-苯并***、卤代-苯并***(卤素=F、Cl、Br或I)、萘并***、2-巯基苯并咪唑(MBI)、2-巯基苯并噻唑、4-甲基-2-苯基咪唑、2-巯基噻唑啉、5-氨基四唑、5-氨基四唑一水合物、5-氨基-1,3,4-噻二唑-2-硫醇、2,4-二氨基-6-甲基-1,3,5-三嗪、噻唑、三嗪、甲基四唑、1,3-二甲基-2-咪唑啉酮、1,5-五亚甲基四唑、1-苯基-5-巯基四唑、二氨基甲基三嗪、咪唑啉硫酮、巯基苯并咪唑、4-甲基-4H-1,2,4-***-3-硫醇、5-氨基-1,3,4-噻二唑-2-硫醇和苯并噻唑中的一种或多种,更优选为苯并***(BTA)和/或甲苯***。
所述的组合物中,所述的缓蚀剂的质量分数可为0.005%-2%,优选0.01%-2%(例如0.01%、0.5%、1%或2%)。
所述的组合物中,所述的有机胺可为本领域常规使用的有机胺,优选单乙醇胺、二乙醇胺、三乙醇胺、二乙醇单异丙醇胺、N-甲基乙醇胺、异丙醇胺、乙基二乙醇胺、N,N-二乙基乙醇胺、N-(2-氨基乙基)乙醇胺和二甘醇胺中的一种或多种,更优选单乙醇胺和/或异丙醇胺。
所述的组合物中,所述的有机溶剂可为本领域常规使用的有机溶剂,优选四亚甲基砜、甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、叔丁醇、1-戊醇、己醇、环己醇、2-乙基-1-己醇、苯甲醇、呋喃甲醇、乙二醇、二甘醇、丙二醇(1,2-丙二醇)、四亚甲二醇(1,4-丁二醇)、2,3-丁二醇、1,3-丁二醇、新戊二醇、二甘醇单甲醚、三甘醇单甲醚、二甘醇单***、三甘醇单***、乙二醇单丙醚、乙二醇单丁醚、二甘醇单丁醚、三甘醇单丁醚、丙二醇甲基醚、二丙二醇甲基醚、三丙二醇甲基醚、丙二醇正丙基醚、二丙二醇正丙基醚、三丙二醇正丙基醚、丙二醇正丁基醚、二丙二醇正丁基醚及三丙二醇正丁基醚、二甲基乙酰胺、甲酰胺、二甲基甲酰胺、1-甲基-2-吡咯烷酮、二甲亚砜和四氢呋喃甲醇(THFA)中的一种或多种,更优选乙二醇单丁醚、四亚甲砜和二甲基甲酰胺中的一种或多种。
所述的组合物中,所述的有机溶剂的质量分数可为10%-50%(例如10%、30%或50%)。
所述的组合物中,所述的表面活性剂的质量分数可为0.005%-2%,优选0.01%-2%(例如0.01%、0.05%、0.7%或2%)。
所述的组合物中,所述的钝化剂的质量分数可为0.005%-1%,优选0.01%-1%(例如0.01%、0.05%、0.7%或2%)。
在本发明某些优选实施方案中,本发明提供了一种组合物,其由下述原料制得,所述的原料包括以下质量分数的组分:0.1%-3%的氟化物、0.5%-5%的季铵碱、0.005%-2%的螯合剂、0.005%-2%的缓蚀剂、10%-30%的有机胺、0.005%-2%的表面活性剂、0.005%-1%的钝化剂、5%-50%的有机溶剂和余量的水,所述的质量分数为各组分质量占原料的总质量的百分比。
在本发明某些优选实施方案中,本发明提供了一种组合物,其由下述原料制得,所述的原料包括以下质量分数的组分:0.5%-3%的氟化物、1%-5%的季铵碱、0.01%-2%的螯合剂、0.01%-2%的缓蚀剂、10%-30%的有机胺、0.01%-2%的表面活性剂、0.01%-1%的钝化剂、10%-50%的有机溶剂和余量的水,所述的质量分数为各组分质量占原料的总质量的百分比。
在本发明某些优选实施方案中,本发明提供了一种组合物,其由下述原料制得,所述的原料由以下质量分数的组分组成:如上所述的氟化物、如上所述的季铵碱、如上所述的螯合剂、如上所述的缓蚀剂、如上所述的有机胺、如上所述的表面活性剂、如上所述的钝化剂、如上所述的有机溶剂和余量的水,所述的质量分数为各组分质量占原料的总质量的百分比。
本发明还提供了一种上述的组合物的制备方法,其包括以下步骤:将所述的原料混合,得到组合物即可;
其中,所述的混合优选将所述的原料组分中的固体组分加入到液体组分中,搅拌均匀,即可。
在所述的制备方法中,所述的混合的温度可为室温。
本发明还提供了一种上述的组合物在清洗其上具有抗反射材料及/或刻蚀后包含残留物的微电子装置的应用;
其中,所述的其上具有抗反射材料及/或刻蚀后包含残留物的微电子装置优选为具有含有图案化的SARC结构的图案化晶片;
其中,所述的清洗的温度优选为40℃-60℃(例如50℃);所述的清洗的时间可为5min-30min(例如20min)。
本发明中,如无特殊说明,“室温”是指10-40℃。
在符合本领域常识的基础上,上述各优选条件,可任意组合,即得本发明各较佳实例。
本发明所用试剂和原料均市售可得。
本发明的积极进步效果在于:本发明的组合物可用于其上具有抗反射材料及/或刻蚀后包含残留物的微电子装置的清洗,特别是用于具有含有图案化的SARC结构的图案化晶片的清洗,其可与下层介电材料、互连金属(例如,铝、铜及钴合金)及含氮化物层兼容。并且,本发明的清洗液对多种金属(例如Co、W和Cu等)、介电材料(例如PECVD TEOS、CORALTM、SiN和TiON等)和SARC材料(例如DUO 248TM或DUO 193TM)缓蚀性强,且该清洗液清洗样品后无残留物、对多种金属、介电材料和SARC材料相容性好,无底切。
具体实施方式
下面通过实施例的方式进一步说明本发明,但并不因此将本发明限制在所述的实施例范围之中。下列实施例中未注明具体条件的实验方法,按照常规方法和条件,或按照商品说明书选择。
1.组合物的制备实施例
将表1的原料组分按以下表2的质量分数混合均匀。其中,所述的混合优选为将所述的原料组分中的固体组分加入到液体组分中,搅拌均匀,即可。
表1各实施例中的组分种类
其中,上述EO-PO材料全部购自南通锦莱化工有限公司。
表2各实施例中组分的质量分数
2.刻蚀实验
(1)刻蚀实验操作:
将待检测样品在50℃下在清洗液中静态浸渍20分钟,然后去离子水清洗后氮气吹干。
(2)测量刻蚀速率的方法:
分别检测样品在刻蚀前后的厚度,其中金属样品采用四点探针仪器(日本Napson的CRESTEST-e)测试厚度,非金属样品采用光学膜厚测量仪(美国Filmetrics F20)测试厚度。
(3)待测样品:硅晶片上沉积了单一材料的dummy片子(假片),如铜、钴、介电材料(低k或高k)、SARC材料等。其中,该SARC材料为DUO 248TM和DUO 193TM,其为旋涂式SARC材料(具有包含有机的光吸收生色团的硅氧烷骨架),市售自Honeywell ElectronicMaterials,商业上分别用于248nm和193nm光刻法。CORALTM电介质,市售自Novellus Systems的OSG低k电介质材料。PECVD TEOS,使用原硅酸四乙酯通过等离子增强的化学气相沉积而沉积的二氧化硅涂层。
实施例1-12和对比例1-10的清洗液中的腐蚀速度如下表3所示:
表3待测样品假片的腐蚀速度
3.效果实施例
清洗效果待检测样品:具有含有图案化的SARC结构的图案化晶片。
清洗效果实验方法:将样品在50℃下在清洗液中静态浸渍20分钟,然后去离子水清洗后氮气吹干。用电子显微镜SEM观测清洗和腐蚀效果。
表4效果实施例
其中,清洗效果分四个等级:A-观察不到残留物;B-观察到极少量残留物;C-观察到少量残留物;D-观察到有明显较多残留物。
腐蚀效果分四个等级:A-相容性佳,无底切;B-有极轻微底切;C-有少量底切;D-底切较为明显和严重。
综上,以上实施例中(1-12),在电子显微镜观察时,在清洗待测样品后,观察不到残留物,且待检测样品在实施例(1-12)的组合物中相容性佳,无底切。以上对比例中(1-10),在电子显微镜观察时,在清洗待测样品后,均能观察到残留物,且待检测样品在对比例(1-10)的组合物中相容性差,存在底切现象。
Claims (8)
1.一种组合物,其特征在于,其由下述原料制得,所述的原料由以下质量分数的组分组成:0.5%-3%的氟化物、1%-5%的季铵碱、0.01%-2%的螯合剂、0.01%-2%的缓蚀剂、10%-30%的有机胺、0.01%-2%的表面活性剂、0.01%-1%的钝化剂、10%-50%的有机溶剂和余量的水,所述的质量分数为各组分质量占原料的总质量的百分比;
其中,所述的表面活性剂为EO-PO聚合物L31,所述的钝化剂为1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑);
所述的氟化物为氟化铵和/或氟化氢铵;
所述的季铵碱为四甲基氢氧化铵和/或胆碱;
所述的螯合剂为乙二胺四乙酸和/或1,2-环己二胺-N,N,N',N'-四乙酸;
所述的缓蚀剂为苯并***和/或甲苯***;
所述的有机胺为单乙醇胺和/或异丙醇胺;
所述的有机溶剂为乙二醇单丁醚、四亚甲砜和二甲基甲酰胺中的一种或多种。
2.如权利要求1所述的组合物,其特征在于,所述的氟化物的质量分数为0.5%、1%或3%;
和/或,所述的季铵碱的质量分数为1%、2.5%或5%;
和/或,所述的螯合剂的质量分数为0.01%、0.5%、1%或2%;
和/或,所述的缓蚀剂的质量分数为0.01%、0.5%、1%或2%;
和/或,所述的表面活性剂的质量分数为0.01%、0.05%、0.7%或2%;
和/或,所述的钝化剂的质量分数为0.01%、0.05%、0.7%或2%。
3.一种如权利要求1或2所述的组合物的制备方法,其特征在于,其包括以下步骤:将所述的原料混合,得到组合物即可。
4.如权利要求3所述的组合物的制备方法,其特征在于,所述的混合为将所述的原料组分中的固体组分加入到液体组分中,搅拌均匀,即可;
和/或,所述的混合的温度为室温。
5.一种如权利要求1或2所述的组合物在清洗其上具有抗反射材料及/或刻蚀后包含残留物的微电子装置的应用。
6.如权利要求5所述的组合物在清洗其上具有抗反射材料及/或刻蚀后包含残留物的微电子装置的应用,其特征在于,所述的其上具有抗反射材料及/或刻蚀后包含残留物的微电子装置为具有含有图案化的SARC结构的图案化晶片。
7.如权利要求5所述的组合物在清洗其上具有抗反射材料及/或刻蚀后包含残留物的微电子装置的应用,其特征在于,所述的清洗的温度为40℃-60℃;
和/或,所述的清洗的时间为5 min-30 min。
8.如权利要求6所述的组合物在清洗其上具有抗反射材料及/或刻蚀后包含残留物的微电子装置的应用,其特征在于,所述的清洗的温度为50℃;
和/或,所述的清洗的时间为20 min。
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