WO2010057652A8 - Nonodrähte auf substratoberflächen, verfahren zu deren herstellung sowie deren verwendung - Google Patents

Nonodrähte auf substratoberflächen, verfahren zu deren herstellung sowie deren verwendung Download PDF

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Publication number
WO2010057652A8
WO2010057652A8 PCT/EP2009/008277 EP2009008277W WO2010057652A8 WO 2010057652 A8 WO2010057652 A8 WO 2010057652A8 EP 2009008277 W EP2009008277 W EP 2009008277W WO 2010057652 A8 WO2010057652 A8 WO 2010057652A8
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WO
WIPO (PCT)
Prior art keywords
nanowires
nanoclusters
nanoparticles
substrate surfaces
seed material
Prior art date
Application number
PCT/EP2009/008277
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English (en)
French (fr)
Other versions
WO2010057652A1 (de
Inventor
Stefan Kudera
Eva Bock
Joachim P. Spatz
Liberato Manna
Original Assignee
MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V.
Istituto Italiano Di Tecnologia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V., Istituto Italiano Di Tecnologia filed Critical MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V.
Priority to US13/130,234 priority Critical patent/US20110284820A1/en
Priority to EP09763848A priority patent/EP2351087A1/de
Priority to CN200980146632.6A priority patent/CN102301479B/zh
Publication of WO2010057652A1 publication Critical patent/WO2010057652A1/de
Publication of WO2010057652A8 publication Critical patent/WO2010057652A8/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Herstellung von verankerten Nanodrähten auf Substratoberflächen. Das erfindungsgemäß Verfahren zur Herstellung von verankerten Nanodrähten beinhaltet keine Abscheidungsschritte aus der Gasphase und umfasst mindestens die folgenden Schritte: a) Bereitstellen einer Substratoberfläche mit einer vorgegebenen zweidimensionalen geometrischen Anordnung von Nanopartikeln oder Nanoclustern; b) Kontaktieren der Substratoberfläche mit den Nanopartikeln oder Nanoclustern mit mindestens einer Lösung des die Nanodrähte bildenden Materials, wobei sich das die Nanodrähte bildende Material selektiv auf den Nanopartikeln oder Nanoclustern abscheidet und dort weiter wächst. Vorzugsweise umfasst das erfindungsgemäße Verfahren ferner, dass in Schritt a) die Aufbringung eines Keimmaterials auf die Nanopartikel oder Nanocluster durch Kontaktieren der Substratoberfläche mit einer Lösung des Keimmaterials derart erfolgt, dass sich das Keimmaterial selektiv auf den Nanopartikeln oder Nanoclustern abscheidet und dass sich in Schritt b) das die Nanodrähte bildende Material selektiv auf den mit Keimmaterial versehenen Nanopartikeln oder Nanoclustern abscheidet und dort weiter wächst.
PCT/EP2009/008277 2008-11-21 2009-11-20 Nonodrähte auf substratoberflächen, verfahren zu deren herstellung sowie deren verwendung WO2010057652A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US13/130,234 US20110284820A1 (en) 2008-11-21 2009-11-20 Nanowires on substrate surfaces, method for producing same and use thereof
EP09763848A EP2351087A1 (de) 2008-11-21 2009-11-20 Nonodrähte auf substratoberflächen, verfahren zu deren herstellung sowie deren verwendung
CN200980146632.6A CN102301479B (zh) 2008-11-21 2009-11-20 基底表面上的纳米线、其制造方法及应用

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008058400.2 2008-11-21
DE102008058400A DE102008058400A1 (de) 2008-11-21 2008-11-21 Nanodrähte auf Substratoberflächen, Verfahren zu deren Herstellung sowie deren Verwendung

Publications (2)

Publication Number Publication Date
WO2010057652A1 WO2010057652A1 (de) 2010-05-27
WO2010057652A8 true WO2010057652A8 (de) 2011-06-16

Family

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Application Number Title Priority Date Filing Date
PCT/EP2009/008277 WO2010057652A1 (de) 2008-11-21 2009-11-20 Nonodrähte auf substratoberflächen, verfahren zu deren herstellung sowie deren verwendung

Country Status (6)

Country Link
US (1) US20110284820A1 (de)
EP (1) EP2351087A1 (de)
KR (1) KR20110099005A (de)
CN (1) CN102301479B (de)
DE (1) DE102008058400A1 (de)
WO (1) WO2010057652A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569034A (zh) * 2012-02-15 2012-07-11 中国科学院半导体研究所 在自然氧化的Si衬底上生长InAs纳米线的方法
CN102618269B (zh) * 2012-03-13 2016-06-29 浙江理工大学 一种CdS/Sn异质结构纳米发光材料的制备方法
CN103794474A (zh) * 2014-01-29 2014-05-14 中国科学院半导体研究所 硅衬底上生长纳米线的衬底处理方法
US9528194B2 (en) 2014-03-31 2016-12-27 Taiwan Semiconductor Manufacturing Company Limited & National Taiwan University Systems and methods for forming nanowires using anodic oxidation
US9953989B2 (en) 2014-03-31 2018-04-24 Taiwan Semiconductor Manufacturing Company Limited and National Taiwan University Antifuse array and method of forming antifuse using anodic oxidation
CN104070178A (zh) * 2014-07-01 2014-10-01 扬州大学 一种粒径可控的单分散铋纳米粒子的制备方法
US10160906B2 (en) 2015-02-24 2018-12-25 Fondazione Istituto Italiano Di Tecnologia Masked cation exchange lithography
DE102017104906A1 (de) * 2017-03-08 2018-09-13 Olav Birlem Anordnung und Verfahren zum Bereitstellen einer Vielzahl von Nanodrähten
CN114520266A (zh) * 2021-10-22 2022-05-20 中国科学院重庆绿色智能技术研究院 硫化铅光电导探测器及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59809228D1 (de) * 1997-10-29 2003-09-11 Univ Ulm Nanostrukturen
DE19747815A1 (de) 1997-10-29 1999-05-06 Univ Ulm Nanostrukturierung von Oberflächen
US20110039690A1 (en) * 2004-02-02 2011-02-17 Nanosys, Inc. Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production
JP4813775B2 (ja) * 2004-06-18 2011-11-09 日本電信電話株式会社 多孔構造体及びその製造方法
US8372470B2 (en) 2005-10-25 2013-02-12 Massachusetts Institute Of Technology Apparatus and methods for controlled growth and assembly of nanostructures
JP5032823B2 (ja) * 2006-10-20 2012-09-26 日本電信電話株式会社 ナノ構造およびナノ構造の作製方法
DE102007017032B4 (de) 2007-04-11 2011-09-22 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Verfahren zur Herstellung von flächigen Größen- oder Abstandsvariationen in Mustern von Nanostrukturen auf Oberflächen
CN101255603B (zh) * 2007-12-06 2011-11-23 上海大学 模板电沉积法制备ⅱ-ⅵ族半导体纳米线的方法

Also Published As

Publication number Publication date
CN102301479B (zh) 2014-08-27
US20110284820A1 (en) 2011-11-24
DE102008058400A1 (de) 2010-05-27
EP2351087A1 (de) 2011-08-03
WO2010057652A1 (de) 2010-05-27
CN102301479A (zh) 2011-12-28
KR20110099005A (ko) 2011-09-05

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