WO2009116744A2 - Led lead frame, led package using the same and manufacturing method thereof - Google Patents

Led lead frame, led package using the same and manufacturing method thereof Download PDF

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Publication number
WO2009116744A2
WO2009116744A2 PCT/KR2009/001191 KR2009001191W WO2009116744A2 WO 2009116744 A2 WO2009116744 A2 WO 2009116744A2 KR 2009001191 W KR2009001191 W KR 2009001191W WO 2009116744 A2 WO2009116744 A2 WO 2009116744A2
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WO
WIPO (PCT)
Prior art keywords
light emitting
emitting chip
medium
trench
diode package
Prior art date
Application number
PCT/KR2009/001191
Other languages
French (fr)
Korean (ko)
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WO2009116744A3 (en
Inventor
이경재
오승현
Original Assignee
(주)루멘스
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Publication of WO2009116744A2 publication Critical patent/WO2009116744A2/en
Publication of WO2009116744A3 publication Critical patent/WO2009116744A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations

Definitions

  • the present invention relates to a light emitting diode package. More particularly, the present invention relates to a light emitting diode package capable of realizing white light using fluorescence excitation characteristics, and a method of manufacturing a lead frame and a light emitting diode package applied to the light emitting diode package.
  • Light emitting diodes (Light Emitting Diode) is a device that converts electricity into infrared or light using the characteristics of the compound semiconductor. Recently, the light emitting diodes have been variously developed as a next-generation lighting source that replaces a cold cathode fluorescent lamp (CCFL).
  • CCFL cold cathode fluorescent lamp
  • the light emitting diode which realizes white light by using the light emitting element and the phosphor excited by the light emitting element, exhibits various colors from various angles because the photoluminescence of the phosphor and the light emitting chip for each light emitting position is not excited at the same ratio.
  • the light emitted from the light emitting device passes through the fluorescent molding agent containing the phosphor.
  • the light emitted to the front of the device passes the fluorescent molding agent and the light emitted to the side of the device A difference occurs in the distance passing through the fluorescent molding agent. Therefore, the conventional light emitting diode is a difference between the front light emitting color and the side light emitting color is generated thereby it is not possible to express a uniform color in the hemispherical light emitting pattern.
  • a technique for primary molding of a resin containing a phosphor through a separate mold is disclosed by partially improving a problem of a conventional fluorescently excited white light emitter.
  • the above structure also requires an expensive and complicated mold, and the chip size is extremely small, which makes it difficult to manufacture the mold.
  • it is not applicable to the structure in which the gold wire protrudes for the electrical connection on the chip there is a disadvantage that a flip chip that does not wire bonding should be used.
  • the conventional structure uses a flip chip or additionally requires an expensive light emitting chip including a silicon die pad on the bottom of the chip, resulting in an increase in manufacturing cost.
  • the productivity is lowered due to a decrease in yield during mass production, and cannot be expanded and applied in addition to a special use.
  • FIG. 1A is a plan view of a light emitting diode package according to a first embodiment of the present invention
  • FIG. 1B is an enlarged view of portion A of FIG. 1A.
  • FIG. 2A is a side cross-sectional view of a light emitting diode package according to a first embodiment of the present invention
  • FIG. 2B is an enlarged view of a portion B of FIG. 2A.
  • FIG. 3A is a side cross-sectional view of a light emitting diode package according to a second embodiment of the present invention
  • FIG. 3B is an enlarged view of part C of FIG. 3A.
  • FIG. 4A is a side cross-sectional view of a light emitting diode package according to a third embodiment of the present invention
  • FIG. 4B is an enlarged view of portion D of FIG. 4A.
  • FIG. 5A is a side cross-sectional view of a light emitting diode package according to a fourth embodiment of the present invention
  • FIG. 5B is an enlarged view of portion E of FIG. 5A.
  • FIG. 6A is a side cross-sectional view of a light emitting diode package according to a fifth embodiment of the present invention
  • FIG. 6B is an enlarged view of portion F of FIG. 6A.
  • FIG. 7 is a schematic view illustrating a manufacturing process of a light emitting diode package according to an embodiment of the present invention.
  • FIG. 8 is a flowchart illustrating a manufacturing process of a light emitting diode package according to an embodiment of the present invention.
  • the present invention provides a light emitting diode package and a method of manufacturing the same, which can reduce manufacturing cost and prevent productivity loss and dramatically improve yield in mass production.
  • the present invention also provides a light emitting diode package and a method for manufacturing the same, which can be manufactured by applying all general purpose light emitting chips.
  • the light emission includes a plate, a light emitting chip bonded to the plate, a first medium formed on the plate to cover the light emitting chip, and emitting light having a wavelength independent of the light emission wavelength of the light emitting chip;
  • a light emitting diode package including a second medium formed on a first medium and transmitting a light emitted from the light emitting chip and the first medium, and a restriction unit formed on the plate to set a range of the first medium.
  • the regulating unit may include a trench spaced apart from the light emitting chip to form a shape corresponding to the shape of the light emitting chip.
  • the trench may have a polygonal or circular cross-sectional structure.
  • the regulating unit may include a protrusion spaced apart from the light emitting chip to form a shape corresponding to the shape of the light emitting chip.
  • the protrusion may have a polygonal or circular cross-sectional structure.
  • the regulation part may include a downset part recessed in a light emitting chip mounting part.
  • the trench may be formed only at a position corresponding to the side surface of the light emitting chip.
  • the trench may form a closed curve around the light emitting chip.
  • It may further include an auxiliary trench or an auxiliary protrusion formed outside the regulation unit.
  • An inner reflector may be formed on the plate to mount the light emitting chip in the inner reflector, and an outer reflector may be formed outside the inner reflector to fill a second medium in the outer reflector.
  • the plate may be a leadframe.
  • the present invention also provides a step of forming a restricting portion around the light emitting chip on a plate on which the light emitting chip is mounted, in order to achieve the above object, die bonding the light emitting chip on the plate, and within the range set by the restricting portion. Applying a first medium that emits light having a wavelength independent of the light emission wavelength of the light emitting chip to surround the light emitting chip, and a second medium through which light from the first medium is transmitted on the first medium. It provides a light emitting diode package manufacturing method comprising the step of applying.
  • the method may further include forming an internal reflector on the plate on which the light emitting chip is mounted before the regulation unit is formed.
  • the regulating unit may include a trench spaced apart from the light emitting chip to form a shape corresponding to the shape of the light emitting chip.
  • the regulating unit may include a protrusion spaced apart from the light emitting chip to form a shape corresponding to the shape of the light emitting chip.
  • the regulation part may include a downset part recessed in a light emitting chip mounting part.
  • the plate may be a leadframe.
  • the first medium that emits an excitation wavelength by the light emitting chip can be applied to the light emitting chip with a uniform thickness and amount, thereby solving the problem of emitting different emission colors for each radiation pattern angle even in various lens configurations.
  • One color distribution can be realized.
  • the uniform number of light emitting chips per module unit reduces the number of light emitting chips per unit unit when forming a lens for emitting a wide angle of view, providing an optimal light source with minimum cost, maximizing color reproducibility, and increasing mass production.
  • the manufacturing cost can be minimized.
  • Embodiments of the invention described with reference to a perspective view specifically illustrate an ideal embodiment of the invention.
  • various modifications of the illustrations for example, manufacturing methods and / or specifications, are expected.
  • the embodiment is not limited to the specific form of the illustrated region, but includes, for example, modification of the form by manufacture.
  • regions shown or described as flat may have properties that are generally rough and / or rough.
  • portions shown to have sharp angles may be rounded. Accordingly, the regions shown in the figures are only approximate in nature, and their forms are not intended to depict the exact form of the regions and are not intended to narrow the scope of the invention.
  • FIG. 1A is a plan view of a light emitting diode package according to a first embodiment of the present invention
  • FIG. 1B is an enlarged view of portion A of FIG. 1A
  • FIG. 2A is a side cross-sectional view of the LED package according to the first embodiment of the present invention
  • FIG. 2B is an enlarged view of part B of FIG. 2A.
  • the light emitting diode package 10 expresses white or white color by a combination of the light emission wavelength of the light emitting chip and the light emission wavelength of the phosphor excited by the light emitting chip.
  • the light emitting diode package 10 has a lead frame 11 including an anode lead frame and a cathode lead frame as a plate.
  • the light emitting chip 12 is attached to the die pad of the lead frame 11 through a die adhesive agent.
  • An outer reflector 13 is formed on the lead frame 11 to surround the light emitting chip 12.
  • a conducting wire 14 is connected between each of the light emitting chips 12 and the lead frame 11, and a first medium 15 is coated to a thickness set on the light emitting chips 12 to cover the light emitting chips.
  • the first medium 15 is a mixture of phosphors excited and emitted by the corresponding light emitting chip.
  • the transparent resin encapsulant 16 is filled in the outer reflector.
  • a circular internal reflector 17 is formed in a die pad portion on which the light emitting chip 12 is mounted, and the light emitting chip 12 is die-bonded inside the internal reflector.
  • the internal reflector 17 concentrates the light emitted from the light emitting chip toward the front of the package.
  • the lead frame 11 is spaced apart from the light emitting chip by a predetermined distance along the periphery of the light emitting chip 12 on the bottom surface of the internal reflector 17 so that the trench 18 is recessed.
  • the trench 18 serves as a regulating unit for regulating the application range of the first medium 15 applied on the light emitting chip 12. Therefore, when the first medium 15 is coated on the light emitting chip 12, the first medium is no longer spread out by the trench 18, so that only the light emitting chip can be wrapped in the correct thickness and shape. will be.
  • the trench 18 has a rectangular cross-sectional shape as shown in FIG. 2, and has a structure recessed in the bottom surface of the lead frame 11.
  • the trench 18 is continuously formed along the periphery of the light emitting chip 15 to form one closed curve.
  • the depth of depression of the trench 18 and the formation width thereof are not particularly limited as long as the spread of the first medium 15 can be stopped.
  • the distance from the light emitting chip side end to the trench 18 outer end with respect to the light emitting chip 12 corresponds to the thickness of the first medium 15 applied on the light emitting chip. have. Accordingly, when the first medium is coated on the light emitting chip, the thickness of the first medium is constant for the entire surface of the light emitting chip.
  • a structure in which protrusions protruding upward on the bottom surface of the lead frame may also be applicable as another embodiment of the present package.
  • the first medium is prevented from spreading outwards by the protrusions so that the first medium can be applied to the light emitting chip in a predetermined thickness and amount.
  • the auxiliary trench 19 may be further formed by being spaced apart from the trench 18 by a predetermined distance.
  • the auxiliary trench 19 serves as a secondary regulating unit for secondly regulating the application range of the first medium 15.
  • the auxiliary trench 19 is recessed in the bottom surface of the lead frame.
  • the depth of depression of the auxiliary trench 19, the width of its formation, and the distance from the trench are not particularly limited.
  • the auxiliary trench 19 has a rectangular cross section.
  • auxiliary trench structure recessed in the bottom as the auxiliary control portion
  • a structure in which an auxiliary protrusion protruding upward on the bottom surface of the lead frame is also applicable as another embodiment of the present package.
  • the structure of the auxiliary regulating portion formed of the auxiliary projections when the first medium passes through the projections or the trenches, the application range of the first medium is secondarily prevented from spreading to the outside of the auxiliary projections.
  • the first medium 15 is a mixture of a phosphor and a transparent epoxy or silicone resin in a predetermined ratio.
  • the structure in which the phosphor is included as the first medium 15 will be described.
  • the structure of the first medium is not limited to a structure including a phosphor, and a structure in which a pigment of a specific color is mixed in place of the phosphor may also be applicable as another embodiment of the present package.
  • the first medium is coated on the light emitting chips through a transfer molding or dispensing process to cover each light emitting chip 12. At this time, the first medium spreading outside of the light emitting chip is blocked by the trench 18 spaced apart from the light emitting chip, thereby covering the light emitting chip as a whole. This process is described in detail later.
  • the phosphor may be a silicate-based phosphor or a nitride-based nitride having high purity to excite a single independent wavelength.
  • the package is molded with a resin outside the inner reflector 17 to form an outer reflector 13 except for lead pads that are wire-bonded to form an electrode.
  • the resin encapsulant 16 is filled in the external reflector 13.
  • the light emitted from the light emitting chip 12 and the first medium 15 is mixed and diverged while passing through the resin encapsulant 16 filled in the external reflector 13. That is, the resin encapsulant 16 filled in the external reflector 13 serves as a second medium for mixing and transmitting light emitted from the first medium 15.
  • the resin encapsulant 16 filled in the external reflector 13 may be formed in a lens form through injection or transfer molding through a lens mold.
  • FIG. 3A is a plan view showing another embodiment of the present package 20, and FIG. 3B is an enlarged view of a portion C of FIG. 3A.
  • the package 20 has an internal reflector 17 formed on the die pad portion of the lead frame 11 on which the light emitting chip 12 is mounted, and the light emitting chip 12 is formed on the bottom surface of the internal reflector.
  • a trench 21 spaced apart from the light emitting chip by a predetermined distance is formed along the periphery.
  • the trench 21 serves as a regulating unit for regulating the application range of the first medium 15 applied on the light emitting chip 12. Therefore, when the first medium 15 is coated on the light emitting chip 12, the first medium is no longer spread out by the trench 21, so that only the light emitting chip can be wrapped in the correct thickness and shape. will be.
  • the trench 21 has a structure recessed in the bottom surface of the lead frame 11.
  • the trench 21 has a structure formed only in the side portion except for the corner portion of the light emitting chip 12.
  • the trench 21 has a structure in which the light emitting chip 12 of the rectangular shape is arranged in a straight line on each side.
  • a structure having protrusions projecting upward on the bottom surface of the lead frame may also be applicable as another embodiment of the present package.
  • the projections may also be formed in a straight line on each quadrangle with respect to the rectangular light emitting chip.
  • the auxiliary trench 22 is further formed to be spaced apart from the trench 21 by a predetermined distance.
  • the auxiliary trench 22 serves as an auxiliary regulating unit for secondly regulating the application range of the first medium 15.
  • the auxiliary trench 22 is recessed in the bottom surface of the lead frame 11, and has a structure formed only in the side portion except for the corner portion of the light emitting chip 12. That is, the auxiliary trench 22 is formed in a straight line at each quadrangle with respect to the rectangular light emitting chip.
  • auxiliary protrusion in addition to the auxiliary trench structure recessed in the bottom as the auxiliary control portion, a structure in which an auxiliary protrusion protruding upward on the bottom surface of the lead frame is also applicable as another embodiment of the present package.
  • the auxiliary protrusion may also be formed in a straight line shape on each quadrangle with respect to the rectangular light emitting chip.
  • FIG. 4A is a cross-sectional view showing another embodiment of the present package 30, and FIG. 4B is an enlarged view of portion D of FIG. 4A.
  • the package 30 has a structure in which a hemispherical lens 33 is molded on the external reflector 13.
  • an internal reflector 17 is formed in the die pad portion of the lead frame 11 on which the light emitting chip 12 is mounted, and a downset portion 31 is formed in the bottom surface of the internal reflector 17.
  • the downset part 31 serves as a regulating part for regulating the application range of the first medium 15 applied on the light emitting chip. Therefore, when the first medium 15 is coated on the light emitting chip 12, the first medium is filled into the downset part 31 and is prevented from spreading to the outside any more, so that only the light emitting chip can be wrapped in the correct thickness and shape. Will be.
  • the downset part 31 has a structure in which a stepped portion is formed at the bottom of the inner reflector 17.
  • the downset part 31 has a shape corresponding to the light emitting chip 12, and the size of the downset part 31 is larger than a light emitting chip.
  • the formation depth of the said downset part 31 is not specifically limited.
  • the downset part 31 is formed to be slightly larger than the light emitting chip, so that there is a gap between the inner surface of the downset part 31 and the outer surface of the light emitting chip.
  • the separation distance between the light emitting chip 12 and the inner surface of the downset part 31 has a structure corresponding to the thickness of the first medium 15 applied on the light emitting chip. Accordingly, when the first medium 15 is coated on the light emitting chip 12, the thickness of the first medium is constant with respect to the entire surface of the light emitting chip 12.
  • the auxiliary trench 32 is further formed to be spaced apart from the outside of the downset part 31 by a predetermined distance.
  • the auxiliary trench 32 plays a role of an auxiliary regulating unit that secondly regulates an application range of the first medium 15.
  • the auxiliary trench 32 is recessed in the bottom surface of the lead frame, and is not particularly limited in terms of the depth of depression of the auxiliary trench, its width, and the distance from the downset portion 31.
  • 5A and 5B and 6A and 6B respectively, illustrate the structure of the trench as a package of another embodiment.
  • the package 40 according to the present embodiment has an arc-shaped cross-sectional structure of the trench 41 and the auxiliary trench 42 formed in the lead frame 11.
  • the package 50 of the present embodiment has a triangular cross-sectional structure of the trench 51 and the auxiliary trench 52 formed in the lead frame 11.
  • the plates are all limited to the case of the lead frame, but the plate on the claims is not necessarily limited to the lead frame.
  • the shape of the resin material forming the external reflector 13 may be adjusted to bond the light emitting chip to the resin material and form the restriction portion as described above.
  • the lead frame forms a trench and an auxiliary trench spaced apart a predetermined distance from the mounting position of the light emitting chip on the die pad where the light emitting chip is mounted (S100).
  • the trench and the auxiliary trench are recessed at the bottom of the lead frame and may be formed through an etching process, a mold stamping process, or a downset process.
  • an inner reflector serving as a reflective cup may be further formed by recessing the die pad portion of the lead frame than the bottom surface of the lead frame.
  • an external reflector is formed by injection or transfer molding of thermosetting and plastic resin of high reflectivity material around the die pad of the lead frame.
  • the light emitting chip is mounted in the middle of the trench and the die bonded light emitting chip is subjected to wire bonding process with an energizing wire for electrical connection with the lead frame.
  • the first medium 15 including the phosphor is contained in the syringe 60 as shown in FIG. 7, and then the trench 18 of the lead frame 11 in which the light emitting chip 12 is mounted through a fixed amount discharge facility. Ported to an enclosed area. In this process, temperature, humidity, and air pressure are kept constant to maintain the viscosity of the first medium.
  • the potted first medium is hardened to a certain shape while constantly surrounding the light emitting chip without leaving the trench due to the viscosity and surface tension characteristics of the first medium.
  • the trench serves to define the application area of the first medium.
  • the first medium is wrapped in a predetermined thickness and quantity over the entire surface of the light emitting chip to provide the same number of particles of the phosphor included in the first medium. Therefore, the light amount of the photo luminescence and the ratio of the phosphor are kept constant throughout the entire area regardless of the emission angle, thereby providing a uniform color.
  • the color uniformity of the light emitting source when forming the external lens for adjusting the light emission angle it is possible to easily design a lens having a more diverse orientation angle and color uniformity when designing the lens.
  • the content of the phosphor and the amount of the first medium to which the light emitting chip is applied are uniformly adjusted for all the manufactured packages. It becomes possible. Thus, the same color can be reproduced for all packages.
  • a resin encapsulant of a transparent material is injected into the external reflector to fill or transfer molding to form a lens in a desired shape.
  • each device When the resin is cured through the resin encapsulation curing process, each device may be individualized through a trimming or forming process to manufacture a light emitting diode package.
  • the light emitting source is converted from the light emitting chip to the phosphor and is emitted in the same color with a hemispherical radiation pattern, and the light emitting diode package can be maximized by minimizing the arrival period of the light emitting source and the phosphor. It becomes possible.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

This invention provides an LED package that can be fabricated at low cost. In addition, the invention enables manufacturers to stabilize the productivity of the LED package and enhance the yield rate thereof remarkably when fabricating the LED package in bulk. For these purposes, the LED package in the invention comprises: a plate, an LED chip that is bonded to the plate, a primary medium on the plate that covers the LED chip and emits a light having a wavelength different from that of the light from the LED chip, a second medium that is formed on the first medium, and a regulator that manipulates the surface area of the first medium. The light from the LED chip penetrates through the first medium and the second medium.

Description

발광다이오드 리드프레임과 그 리드프레임을 이용한 발광다이오드 패키지 및 그 제조방법 Light emitting diode lead frame, light emitting diode package using the lead frame and manufacturing method thereof 기술분야Field of technology
본 발명은 발광다이오드 패키지에 관한 것이다. 더욱 상세하게 본 발명은 형광 여기 특성을 이용하여 백색광을 구현할 수 있도록 된 발광다이오드 패키지와 발광다이오드 패키지에 적용되는 리드프레임 및 발광다이오드 패키지의 제조방법에 관한 것이다.The present invention relates to a light emitting diode package. More particularly, the present invention relates to a light emitting diode package capable of realizing white light using fluorescence excitation characteristics, and a method of manufacturing a lead frame and a light emitting diode package applied to the light emitting diode package.
배경기술Background
발광다이오드(Light Emitting Diode)는 화합물 반도체의 특성을 이용하여 전기를 적외선 또는 빛으로 변환시키는 소자이다. 최근들어 상기 발광다이오드는 냉음극형광램프(CCFL;Cold Cathode Fluorescent Lamp)을 대체하는 차세대 조명원으로 다양하게 개발되고 있다.Light emitting diodes (Light Emitting Diode) is a device that converts electricity into infrared or light using the characteristics of the compound semiconductor. Recently, the light emitting diodes have been variously developed as a next-generation lighting source that replaces a cold cathode fluorescent lamp (CCFL).
발광 소자와 발광 소자에 의해 여기되는 형광체를 이용하여 백색광을 구현하는 발광다이오드는 형광체와 발광 위치별 발광칩의 포토루미네센스가 동일한 비율로 여기 자극되지 않기 때문에 여러 각도에서 다양한 색상을 표출하게 되고, 동일하고 일정한 색상을 재연하지 못하는 문제점이 있다.The light emitting diode, which realizes white light by using the light emitting element and the phosphor excited by the light emitting element, exhibits various colors from various angles because the photoluminescence of the phosphor and the light emitting chip for each light emitting position is not excited at the same ratio. However, there is a problem that cannot reproduce the same and constant color.
즉, 발광 소자로부터 발산된 빛은 형광체가 포함된 형광몰딩제를 지나게 되는 데, 반구 형태의 발광 패턴에서 소자의 정면으로 발산되는 빛이 형광몰딩제를 지나는 거리와 소자의 측면으로 발산된 빛이 형광몰딩제를 지나는 거리에 차이가 발생하게 된다. 따라서 종래의 발광다이오드는 정면 발광색과 측면 발광색의 차이가 발생하게 되고 이로 인해 반구 형태의 발광 패턴에서 균일한 색상을 표출하지 못하게 되는 것이다.That is, the light emitted from the light emitting device passes through the fluorescent molding agent containing the phosphor. In the hemispherical light emitting pattern, the light emitted to the front of the device passes the fluorescent molding agent and the light emitted to the side of the device A difference occurs in the distance passing through the fluorescent molding agent. Therefore, the conventional light emitting diode is a difference between the front light emitting color and the side light emitting color is generated thereby it is not possible to express a uniform color in the hemispherical light emitting pattern.
또한, 종래의 형광 여기 백색 발광체의 문제점을 일부 개선하여 별도의 금형을 통해 형광체가 포함된 수지를 1차 몰딩하는 기술이 개시되어 있다. 그러나 상기한 구조 역시 고가의 복잡한 금형이 요구되며, 칩 크기가 극도로 작고 이로 인해 금형의 제작이 어려운 단점이 있다. 또한, 칩 위에 전기적인 연결을 위한 골드 와이어가 돌출된 구조에는 적용하지 못하여, 와이어 본딩을 하지 않는 플립칩을 이용해야 하는 단점이 있다.In addition, a technique for primary molding of a resin containing a phosphor through a separate mold is disclosed by partially improving a problem of a conventional fluorescently excited white light emitter. However, the above structure also requires an expensive and complicated mold, and the chip size is extremely small, which makes it difficult to manufacture the mold. In addition, it is not applicable to the structure in which the gold wire protrudes for the electrical connection on the chip, there is a disadvantage that a flip chip that does not wire bonding should be used.
이와같이 상기한 종래의 구조는 플립칩을 이용하거나 추가로 칩 바닥에 실리콘 다이패드를 포함하는 고가의 발광 칩을 적용해야 가능한 구조로 제조원가의 상승을 초래하게 된다. 또한, 대량 양산시 수율의 저하로 생산성이 떨어져 특수한 용도 이외에 확대 적용하지 못하는 문제점이 있다.As described above, the conventional structure uses a flip chip or additionally requires an expensive light emitting chip including a silicon die pad on the bottom of the chip, resulting in an increase in manufacturing cost. In addition, there is a problem in that the productivity is lowered due to a decrease in yield during mass production, and cannot be expanded and applied in addition to a special use.
도면의 간단한 설명Brief description of the drawings
도 1a는 본 발명의 제1실시예에 따른 발광다이오드 패키지의 평면도이며, 도 1b는 도 1a의 A부분에 대한 확대도이다. FIG. 1A is a plan view of a light emitting diode package according to a first embodiment of the present invention, and FIG. 1B is an enlarged view of portion A of FIG. 1A.
도 2a는 본 발명의 제1실시예에 따른 발광다이오드 패키지의 측단면도이며, 도 2b는 도 2a의 B부분에 대한 확대도이다. 2A is a side cross-sectional view of a light emitting diode package according to a first embodiment of the present invention, and FIG. 2B is an enlarged view of a portion B of FIG. 2A.
도 3a는 본 발명의 제2실시예에 따른 발광다이오드 패키지의 측단면도이며, 도 3b는 도 3a의 C부분에 대한 확대도이다. 3A is a side cross-sectional view of a light emitting diode package according to a second embodiment of the present invention, and FIG. 3B is an enlarged view of part C of FIG. 3A.
도 4a는 본 발명의 제3실시예에 따른 발광다이오드 패키지의 측단면도이며, 도 4b는 도 4a의 D부분에 대한 확대도이다. 4A is a side cross-sectional view of a light emitting diode package according to a third embodiment of the present invention, and FIG. 4B is an enlarged view of portion D of FIG. 4A.
도 5a는 본 발명의 제4실시예에 따른 발광다이오드 패키지의 측단면도이며, 도 5b는 도 5a의 E부분에 대한 확대도이다. 5A is a side cross-sectional view of a light emitting diode package according to a fourth embodiment of the present invention, and FIG. 5B is an enlarged view of portion E of FIG. 5A.
도 6a는 본 발명의 제5실시예에 따른 발광다이오드 패키지의 측단면도이며, 도 6b는 도 6a의 F부분에 대한 확대도이다. 6A is a side cross-sectional view of a light emitting diode package according to a fifth embodiment of the present invention, and FIG. 6B is an enlarged view of portion F of FIG. 6A.
도 7은 발 발명의 실시예에 따른 발광다이오드 패키지의 제조과정을 설명하기 위한 개략적인 도면이다.7 is a schematic view illustrating a manufacturing process of a light emitting diode package according to an embodiment of the present invention.
도 8은 본 발명의 실시예에 따른 발광다이오드 패키지의 제조과정을 도시한 순서도이다.8 is a flowchart illustrating a manufacturing process of a light emitting diode package according to an embodiment of the present invention.
기술적 과제Technical challenge
이에 제조원가를 절감할 수 있으면서 생산성 저하를 방지하고 대량 양산시 수율을 극도로 개선시킬 수 있도록 된 발광다이오드패키지 및 그 제조방법을 제공한다.Accordingly, the present invention provides a light emitting diode package and a method of manufacturing the same, which can reduce manufacturing cost and prevent productivity loss and dramatically improve yield in mass production.
또한, 범용의 모든 발광 칩을 적용하여 제조할 수 있는 발광다이오드패키지 및 그 제조방법을 제공한다.The present invention also provides a light emitting diode package and a method for manufacturing the same, which can be manufactured by applying all general purpose light emitting chips.
기술적 해결방법Technical solution
이를 위해 본 발광은 플레이트와, 상기 플레이트에 접합되는 발광 칩과, 상기 발광 칩을 덮도록 상기 플레이트 상에 형성되고 상기 발광 칩의 발광 파장에 의해 독립된 파장의 빛을 발산하는 제1매질과, 상기 제1매질 상에 형성되고 상기 발광 칩과 제1매질로부터 나오는 빛이 투과되는 제2매질과, 상기 플레이트에 형성되어 상기 제1매질의 범위를 설정하는 규제부를 포함하는 발광다이오드 패키지를 제공한다.To this end, the light emission includes a plate, a light emitting chip bonded to the plate, a first medium formed on the plate to cover the light emitting chip, and emitting light having a wavelength independent of the light emission wavelength of the light emitting chip; Provided is a light emitting diode package including a second medium formed on a first medium and transmitting a light emitted from the light emitting chip and the first medium, and a restriction unit formed on the plate to set a range of the first medium.
상기 규제부는 상기 발광 칩에서 이격되어 발광 칩의 형태와 대응되는 형태로 형성되는 트랜치를 포함할 수 있다. The regulating unit may include a trench spaced apart from the light emitting chip to form a shape corresponding to the shape of the light emitting chip.
상기 트랜치는 다각형 또는 원호형의 단면구조일 수 있다.The trench may have a polygonal or circular cross-sectional structure.
상기 규제부는 상기 발광 칩에서 이격되어 발광 칩의 형태와 대응되는 형태로 형성되는 돌기를 포함할 수 있다.The regulating unit may include a protrusion spaced apart from the light emitting chip to form a shape corresponding to the shape of the light emitting chip.
상기 돌기는 다각형 또는 원호형의 단면구조일 수 있다.The protrusion may have a polygonal or circular cross-sectional structure.
상기 규제부는 발광 칩 실장 부위에 함몰 형성된 다운셋부를 포함할 수 있다.The regulation part may include a downset part recessed in a light emitting chip mounting part.
상기 트랜치는 상기 발광 칩의 측면과 대응되는 위치에만 형성될 수 있다.The trench may be formed only at a position corresponding to the side surface of the light emitting chip.
상기 트랜치는 상기 발광 칩을 중심으로 폐곡선을 이룰 수 있다. The trench may form a closed curve around the light emitting chip.
상기 규제부 외측에 형성되는 보조트랜치나 보조 돌기를 더욱 포함할 수 있다It may further include an auxiliary trench or an auxiliary protrusion formed outside the regulation unit.
상기 플레이트에 내부 리플렉터가 형성되어 상기 발광 칩이 내부 리플렉터 내에 실장되고, 상기 내부 리플렉터 외측에 외부 리플렉터가 형성되어 상기 외부 리플렉터 내에 제2매질이 충진되는 것일 수 있다.An inner reflector may be formed on the plate to mount the light emitting chip in the inner reflector, and an outer reflector may be formed outside the inner reflector to fill a second medium in the outer reflector.
상기 플레이트는 리드프레임일 수 있다.The plate may be a leadframe.
본 발명은 또한 전술한 목적을 달성하기 위하여 발광 칩이 실장되는 플레이트에 발광 칩의 주변으로 규제부를 형성하는 단계와, 상기 플레이트에 발광 칩을 다이본딩하는 단계와, 상기 규제부에 의해 설정된 범위 내에 상기 발광 칩의 발광 파장에 의해 독립된 파장의 빛을 발산하는 제1매질을 도포하여 상기 발광 칩을 감싸도록 하는 단계와, 상기 제1매질 상에 제1매질로부터 나오는 빛이 투과되는 제2매질을 도포하는 단계를 포함하는 발광다이오드 패키지 제조방법을 제공한다.The present invention also provides a step of forming a restricting portion around the light emitting chip on a plate on which the light emitting chip is mounted, in order to achieve the above object, die bonding the light emitting chip on the plate, and within the range set by the restricting portion. Applying a first medium that emits light having a wavelength independent of the light emission wavelength of the light emitting chip to surround the light emitting chip, and a second medium through which light from the first medium is transmitted on the first medium. It provides a light emitting diode package manufacturing method comprising the step of applying.
상기 규제부 형성 전에 발광 칩이 실장되는 플레이트에 내부 리플렉터를 형성하는 공정을 더욱 포함할 수 있다.The method may further include forming an internal reflector on the plate on which the light emitting chip is mounted before the regulation unit is formed.
상기 규제부는 상기 발광 칩에서 이격되어 발광 칩의 형태와 대응되는 형태로 형성되는 트랜치를 포함할 수 있다.The regulating unit may include a trench spaced apart from the light emitting chip to form a shape corresponding to the shape of the light emitting chip.
상기 규제부는 상기 발광 칩에서 이격되어 발광 칩의 형태와 대응되는 형태로 형성되는 돌기를 포함할 수 있다.The regulating unit may include a protrusion spaced apart from the light emitting chip to form a shape corresponding to the shape of the light emitting chip.
상기 규제부는 발광 칩 실장 부위에 함몰 형성된 다운셋부를 포함할 수 있다.The regulation part may include a downset part recessed in a light emitting chip mounting part.
상기 플레이트는 리드프레임일 수 있다.The plate may be a leadframe.
유리한 효과Favorable effect
이와 같이 발광 칩에 의한 여기 파장을 발산하는 제1매질을 발광 칩에 균일한 두께와 양으로 도포할 수 있게 됨으로써 다양한 형태의 렌즈 구성시에도 방사 패턴 각도별 상이한 발광색을 발산하는 문제점을 해결하여 균일한 색분포를 구현할 수 있게 된다.As such, the first medium that emits an excitation wavelength by the light emitting chip can be applied to the light emitting chip with a uniform thickness and amount, thereby solving the problem of emitting different emission colors for each radiation pattern angle even in various lens configurations. One color distribution can be realized.
또한, 균일한 색상의 면발광이 가능하게 되어 백라이트 모듈의 제품 두께를 얇게 제조할 수 있게 된다.In addition, it is possible to produce a uniform color surface light emitting thin product thickness of the backlight module.
또한, 넓은 지향각의 방사를 위한 렌즈 형성시 균일한 색표출로 모듈 유닛당 발광 칩의 사용개수를 줄여 최소의 비용으로 최적의 광원을 제공하며, 색재현성을 극대화시킬 수 있고, 양산성을 높여 제조원가를 최소화할 수 있게 된다.In addition, the uniform number of light emitting chips per module unit reduces the number of light emitting chips per unit unit when forming a lens for emitting a wide angle of view, providing an optimal light source with minimum cost, maximizing color reproducibility, and increasing mass production. The manufacturing cost can be minimized.
발명의 실시를 위한 최선의 형태Best Mode for Carrying Out the Invention
이하, 첨부한 도면을 참고로 하여 본 발명의 실시예에 대하여 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 상세히 설명한다. 그러나 본 발명은 여러 가지 상이한 형태로 구현될 수 있으며 여기에서 설명하는 실시예에 한정되지 않는다. 다르게 정의하지는 않았지만, 여기에 사용되는 기술용어 및 과학용어를 포함하는 모든 용어들은 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 일반적으로 이해하는 의미와 동일한 의미를 가진다. 보통 사용되는 사전에 정의된 용어들은 관련기술문헌과 현재 개시된 내용에 부합하는 의미를 가지는 것으로 추가 해석되고, 정의되지 않는 한 이상적이거나 매우 공식적인 의미로 해석되지 않는다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Unless defined otherwise, all terms including technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. Commonly defined terms used are additionally interpreted to have a meaning consistent with the related technical literature and the presently disclosed contents, and are not interpreted in an ideal or very formal sense unless defined.
사시도를 참조하여 설명된 본 발명의 실시예는 본 발명의 이상적인 실시예를 구체적으로 나타낸다. 그 결과, 도해의 다양한 변형, 예를 들면 제조 방법 및/또는 사양의 변형이 예상된다. 따라서 실시예는 도시한 영역의 특정 형태에 국한되지 않으며, 예를 들면 제조에 의한 형태의 변형도 포함한다. 예를 들면, 편평하다고 도시되거나 설명된 영역은 일반적으로 거칠거나/거칠고 비선형인 특성을 가질 수 있다. 또한, 날카로운 각도를 가지는 것으로 도시된 부분은 라운드질 수 있다. 따라서 도면에 도시된 영역은 원래 대략적인 것에 불과하며, 이들의 형태는 영역의 정확한 형태를 도시하도록 의도된 것이 아니고, 본 발명의 범위를 좁히려고 의도된 것이 아니다.Embodiments of the invention described with reference to a perspective view specifically illustrate an ideal embodiment of the invention. As a result, various modifications of the illustrations, for example, manufacturing methods and / or specifications, are expected. Thus, the embodiment is not limited to the specific form of the illustrated region, but includes, for example, modification of the form by manufacture. For example, regions shown or described as flat may have properties that are generally rough and / or rough. Also, portions shown to have sharp angles may be rounded. Accordingly, the regions shown in the figures are only approximate in nature, and their forms are not intended to depict the exact form of the regions and are not intended to narrow the scope of the invention.
또한, 도면들은 개략적이고 축적에 맞게 도시되지 않았다는 것을 일러둔다. 도면에 있는 부분들의 상대적인 치수 및 비율은 도면에서의 명확성 및 편의를 위해 그 크기에 있어 과장되거나 감소되어 도시되었으며 임의의 치수는 단지 예시적인 것이지 한정적인 것은 아니다. 그리고 둘 이상의 도면에 나타나는 동일한 구조물, 요소 또는 부품에는 동일한 참조 부호가 다른 실시예에서 대응하거나 유사한 특징을 나타내기 위해 사용된다.It is also noted that the figures are schematic and not drawn to scale. The relative dimensions and ratios of the parts in the figures have been exaggerated or reduced in size for clarity and convenience in the figures and any dimensions are merely exemplary and not limiting. And the same structure, element or part that appears in more than one figure the same reference numerals are used in different embodiments to indicate corresponding or similar features.
도 1a는 본 발명의 제1실시예에 따른 발광다이오드 패키지의 평면도이며, 도 1b는 도 1a의 A부분에 대한 확대도이다. 도 2a는 본 발명의 제1실시예에 따른 발광다이오드 패키지의 측단면도이고 도 2b는 도 2a의 B부분에 대한 확대도이다.FIG. 1A is a plan view of a light emitting diode package according to a first embodiment of the present invention, and FIG. 1B is an enlarged view of portion A of FIG. 1A. FIG. 2A is a side cross-sectional view of the LED package according to the first embodiment of the present invention, and FIG. 2B is an enlarged view of part B of FIG. 2A.
상기한 도면에 의하면, 본 발광다이오드 패키지(10)는 발광 칩의 발광 파장과 발광 칩에 의해 여기되는 형광체의 발광 파장의 조합으로 백색 또는 백색계의 색상을 표출하게 된다.According to the above-described drawings, the light emitting diode package 10 expresses white or white color by a combination of the light emission wavelength of the light emitting chip and the light emission wavelength of the phosphor excited by the light emitting chip.
이를 위해 본 실시예의 발광다이오드 패키지(10)는 플레이트로서 양극 리드프레임(Anode Lead Frame)과 음극 리드프레임(Cathode Lead Frame)으로 이루어진 리드 프레임(11)을 갖는다. 상기 리드프레임(11)의 다이패드에 다이접착제를 매개로 발광 칩(12)이 부착된다. 상기 리드프레임(11)의 상측에 수지로 성형되어 상기 발광 칩(12)을 둘러싸는 외부 리플렉터(13)가 구비된다. 상기 각 발광 칩(12)과 리드프레임(11) 사이에 통전 와이어(14)가 연결되고, 제1매질(15)이 상기 발광 칩(12)에 설정된 두께로 도포되어 발광 칩을 덮는다. 상기 제1매질(15)은 해당 발광 칩에 의해 여기되어 발광되는 형광체가 혼합된 것이다. 상기 외부 리플렉터 내에 투명의 수지봉지제(16)가 충진된다.To this end, the light emitting diode package 10 according to the present embodiment has a lead frame 11 including an anode lead frame and a cathode lead frame as a plate. The light emitting chip 12 is attached to the die pad of the lead frame 11 through a die adhesive agent. An outer reflector 13 is formed on the lead frame 11 to surround the light emitting chip 12. A conducting wire 14 is connected between each of the light emitting chips 12 and the lead frame 11, and a first medium 15 is coated to a thickness set on the light emitting chips 12 to cover the light emitting chips. The first medium 15 is a mixture of phosphors excited and emitted by the corresponding light emitting chip. The transparent resin encapsulant 16 is filled in the outer reflector.
여기서 본 실시예에 따른 리드프레임(11)은 발광 칩(12)이 실장되는 다이패드 부위에 원형의 내부 리플렉터(17)가 형성되어 상기 내부 리플렉터 안쪽에 발광 칩(12)이 다이본딩된다. 상기 내부 리플렉터(17)는 발광 칩으로부터 발산되는 광을 패키지의 전면 방향으로 집중시키는 역할을 수행하게 된다.In the lead frame 11 according to the present exemplary embodiment, a circular internal reflector 17 is formed in a die pad portion on which the light emitting chip 12 is mounted, and the light emitting chip 12 is die-bonded inside the internal reflector. The internal reflector 17 concentrates the light emitted from the light emitting chip toward the front of the package.
또한, 상기 리드프레임(11)은 내부 리플렉터(17) 내의 바닥면에 발광 칩(12)의 주변을 따라 발광 칩과 소정 거리 이격되어 트랜치(18)가 함몰 형성된다.In addition, the lead frame 11 is spaced apart from the light emitting chip by a predetermined distance along the periphery of the light emitting chip 12 on the bottom surface of the internal reflector 17 so that the trench 18 is recessed.
상기 트랜치(18)는 발광 칩(12) 상에 도포되는 제1매질(15)의 도포 범위를 규제하는 규제부로서의 역할을 수행하게 된다. 따라서 상기 발광 칩(12) 상에 제1 매질(15)을 도포하게 되면 제1매질이 트랜치(18)에 의해 더 이상 외측으로 퍼져 나가는 것이 방지되어 발광 칩만을 정확한 두께와 형태로써 감쌀 수 있게 되는 것이다.The trench 18 serves as a regulating unit for regulating the application range of the first medium 15 applied on the light emitting chip 12. Therefore, when the first medium 15 is coated on the light emitting chip 12, the first medium is no longer spread out by the trench 18, so that only the light emitting chip can be wrapped in the correct thickness and shape. will be.
본 실시예에서 상기 트랜치(18)는 도 2에 도시된 바와 같이 사각 단면 형태로 이루어지며, 리드프레임(11)의 바닥면에서 함몰 형성된 구조로 되어 있다. 또한, 상기 트랜치(18)는 발광 칩(15)의 주변을 따라 연속적으로 형성되어 하나의 폐곡선을 이룬다.In the present embodiment, the trench 18 has a rectangular cross-sectional shape as shown in FIG. 2, and has a structure recessed in the bottom surface of the lead frame 11. In addition, the trench 18 is continuously formed along the periphery of the light emitting chip 15 to form one closed curve.
상기 트랜치(18)의 함몰 깊이나 그 형성 폭에 대해서는 제1매질(15)의 퍼짐을 멈출수 있는 정도면 특별히 한정되지 않는다.The depth of depression of the trench 18 and the formation width thereof are not particularly limited as long as the spread of the first medium 15 can be stopped.
또한, 본 실시예에서 상기 발광 칩(12)을 기준으로 발광 칩 측단에서 트랜치(18) 외측단까지의 간격은 상기 발광 칩 상에 도포되는 제1매질(15)의 두께와 대응되는 구조로 되어 있다. 이에 발광 칩 상에 제1매질을 도포하게 되면 발광 칩의 전체 면에 대해 제1매질의 두께가 일정하게 된다.In the present embodiment, the distance from the light emitting chip side end to the trench 18 outer end with respect to the light emitting chip 12 corresponds to the thickness of the first medium 15 applied on the light emitting chip. have. Accordingly, when the first medium is coated on the light emitting chip, the thickness of the first medium is constant for the entire surface of the light emitting chip.
여기서 상기 규제부로서 바닥에 함몰된 트랜치(18) 구조 외에 리드프레임의 바닥면에 상부로 돌출된 돌기가 형성된 구조 역시 본 패키지의 또다른 실시예로서 적용가능하다 할 것이다. 상기 규제부가 돌기로 이루어진 구조의 경우 제1매질이 돌기에 의해 외측으로 퍼져나가는 것이 방지되어 발광 칩에 일정 두께와 양으로 도포될 수 있게 된다.Here, in addition to the trench 18 structure recessed in the bottom as the restricting portion, a structure in which protrusions protruding upward on the bottom surface of the lead frame may also be applicable as another embodiment of the present package. In the case of the structure consisting of the protrusions, the first medium is prevented from spreading outwards by the protrusions so that the first medium can be applied to the light emitting chip in a predetermined thickness and amount.
또한 본 패키지는 도 2a 및 도 2b에 도시된 바와 같이 상기 트랜치(18)의 외측에 소정 거리 이격되어 보조트랜치(19)가 더욱 형성된다. 상기 보조트랜치(19)는 상기 제1매질(15)의 도포 범위를 2차로 규제하는 보조규제부의 역할을 수행하게 된다. Also, as shown in FIGS. 2A and 2B, the auxiliary trench 19 may be further formed by being spaced apart from the trench 18 by a predetermined distance. The auxiliary trench 19 serves as a secondary regulating unit for secondly regulating the application range of the first medium 15.
상기 보조트랜치(19)는 트랜치(18)와 마찬가지로 리드프레임의 바닥면에 함몰 형성된다. 상기 보조트랜치(19)의 함몰 깊이나 그 형성 폭 및 트랜치와의 이격 거리에 대해서는 특별히 한정되지 않는다.Like the trench 18, the auxiliary trench 19 is recessed in the bottom surface of the lead frame. The depth of depression of the auxiliary trench 19, the width of its formation, and the distance from the trench are not particularly limited.
상기 보조트랜치(19)는 트랜치(18)와 마찬가지로 사각 단면형태로 이루어진다.Like the trench 18, the auxiliary trench 19 has a rectangular cross section.
또한, 보조규제부로써 상기와 같이 바닥에 함몰된 보조트랜치 구조외에 리드 프레임의 바닥면에 상부로 돌출된 보조돌기가 형성된 구조 역시 본 패키지의 또다른 실시예로서 적용가능하다 할 것이다. 상기 보조규제부가 보조돌기로 이루어진 구조의 경우 제1매질이 돌기나 트랜치를 지난 경우 제1매질의 도포 범위를 2차로 규제하여 보조돌기 외측으로 퍼져나가는 것을 방지하게 된다.In addition, in addition to the auxiliary trench structure recessed in the bottom as the auxiliary control portion, a structure in which an auxiliary protrusion protruding upward on the bottom surface of the lead frame is also applicable as another embodiment of the present package. In the case of the structure of the auxiliary regulating portion formed of the auxiliary projections, when the first medium passes through the projections or the trenches, the application range of the first medium is secondarily prevented from spreading to the outside of the auxiliary projections.
한편, 본 실시예에서 상기 제1매질(15)은 형광체를 투명재질의 에폭시 또는 실리콘수지와 일정 비율로 혼합한 것이다. 이하 본 실시예에서는 제1매질(15)로서 형광체가 포함된 구조에 대해 설명하도록 한다. 그러나 제1매질의 구조가 형광체를 포함한 구조에 한정된 것은 아니며 형광체 대신에 특정 색상의 색소가 혼합된 구조 역시 본 패키지의 또다른 실시예로서 적용가능하다 할 것이다.On the other hand, in the present embodiment, the first medium 15 is a mixture of a phosphor and a transparent epoxy or silicone resin in a predetermined ratio. Hereinafter, the structure in which the phosphor is included as the first medium 15 will be described. However, the structure of the first medium is not limited to a structure including a phosphor, and a structure in which a pigment of a specific color is mixed in place of the phosphor may also be applicable as another embodiment of the present package.
상기 제1매질은 트렌스퍼 몰딩 또는 디스펜싱 공정을 통해 발광 칩 상에 도포되어 각 발광 칩(12)을 덮게 된다. 이때, 발광 칩 외측에 퍼져나가는 제1매질은 발광 칩에 이격 형성된 트랜치(18)에 의해 막히게 되어 발광 칩을 전체적으로 일정한 두께로 감싸게 된다. 이러한 과정은 뒤에서 다시 상세하게 설명하도록 한다.The first medium is coated on the light emitting chips through a transfer molding or dispensing process to cover each light emitting chip 12. At this time, the first medium spreading outside of the light emitting chip is blocked by the trench 18 spaced apart from the light emitting chip, thereby covering the light emitting chip as a whole. This process is described in detail later.
여기서 상기 형광체는 단일 독립 파장을 여기 발광하는 순도가 높은 실리케이트(Silicate)계 형광체 또는 니트리드(Nitrid)계 일 수 있다. Here, the phosphor may be a silicate-based phosphor or a nitride-based nitride having high purity to excite a single independent wavelength.
본 패키지는 전극을 형성하기 위해 와이어 본딩되는 리드 패드를 제외한 영역으로 상기 내부 리플렉터(17) 외측에 수지로 몰딩이 되어져 외부 리플렉터(13)를 형성하게 된다. 그리고 상기 외부 리플렉터(13)에 수지봉지제(16)가 충진된다.The package is molded with a resin outside the inner reflector 17 to form an outer reflector 13 except for lead pads that are wire-bonded to form an electrode. In addition, the resin encapsulant 16 is filled in the external reflector 13.
이에 상기 발광 칩(12)과 제1매질(15)로부터 발광되는 빛은 외부 리플렉터(13)에 충진된 수지봉지제(16)를 통과하면서 혼합되어 발산된다. 즉, 상기 외부 리플렉터(13)에 충진된 수지봉지제(16)는 제1매질(15)로부터 발산되는 빛을 혼합하여 투과시키는 제2매질 역할을 수행하게 된다.Accordingly, the light emitted from the light emitting chip 12 and the first medium 15 is mixed and diverged while passing through the resin encapsulant 16 filled in the external reflector 13. That is, the resin encapsulant 16 filled in the external reflector 13 serves as a second medium for mixing and transmitting light emitted from the first medium 15.
여기서 상기 외부 리플렉터(13) 내에 충진되는 수지봉지제(16)는 렌즈금형을 통해 사출 또는 트랜스퍼 몰딩을 통해 렌즈 형태로 형성될 수 있다.Here, the resin encapsulant 16 filled in the external reflector 13 may be formed in a lens form through injection or transfer molding through a lens mold.
도 3a은 본 패키지(20)의 또다른 실시예를 도시한 평면도이고, 도 3b는 도 3a의 C부분의 확대도이다.FIG. 3A is a plan view showing another embodiment of the present package 20, and FIG. 3B is an enlarged view of a portion C of FIG. 3A.
상기한 도면에 의하면, 본 패키지(20)는 발광 칩(12)이 실장되는 리드프레임(11)의 다이패드 부위에 내부 리플렉터(17)가 형성되고, 상기 내부 리플렉터 내의 바닥면에 발광 칩(12)의 주변을 따라 발광 칩과 소정 거리 이격되는 트랜치(21)가 함몰 형성된다.According to the above-described drawings, the package 20 has an internal reflector 17 formed on the die pad portion of the lead frame 11 on which the light emitting chip 12 is mounted, and the light emitting chip 12 is formed on the bottom surface of the internal reflector. A trench 21 spaced apart from the light emitting chip by a predetermined distance is formed along the periphery.
상기 트랜치(21)는 발광 칩(12) 상에 도포되는 제1매질(15)의 도포 범위를 규제하는 규제부로서의 역할을 수행하게 된다. 따라서 상기 발광 칩(12) 상에 제1매질(15)을 도포하게 되면 제1매질이 트랜치(21)에 의해 더 이상 외측으로 퍼져 나가는 것이 방지되어 발광 칩만을 정확한 두께와 형태로써 감쌀 수 있게 되는 것이다.The trench 21 serves as a regulating unit for regulating the application range of the first medium 15 applied on the light emitting chip 12. Therefore, when the first medium 15 is coated on the light emitting chip 12, the first medium is no longer spread out by the trench 21, so that only the light emitting chip can be wrapped in the correct thickness and shape. will be.
본 실시예에서 상기 트랜치(21)는 리드프레임(11)의 바닥면에서 함몰 형성된 구조로 되어 있다. 또한, 상기 트랜치(21)는 발광 칩(12)의 모서리 부분을 제외한 측면부에만 형성된 구조로 되어 있다. 즉, 본 트랜치(21)는 사각형태의 발광 칩(12)에 대해 각 사변에 직선 형태로 배치되어 형성된 구조로 되어 있다.In the present embodiment, the trench 21 has a structure recessed in the bottom surface of the lead frame 11. In addition, the trench 21 has a structure formed only in the side portion except for the corner portion of the light emitting chip 12. In other words, the trench 21 has a structure in which the light emitting chip 12 of the rectangular shape is arranged in a straight line on each side.
여기서 상기 규제부로서 바닥에 함몰된 트랜치 구조외에 리드프레임의 바닥면에 상부로 돌출된 돌기가 형성된 구조 역시 본 패키지의 또다른 실시예로서 적용 가능하다 할 것이다. 이러한 구조의 경우 돌기 역시 사각형태의 발광 칩에 대해 각 사변에 직선 형태로 배치 형성될 수 있다.Here, in addition to the trench structure recessed in the bottom as the restricting portion, a structure having protrusions projecting upward on the bottom surface of the lead frame may also be applicable as another embodiment of the present package. In the case of this structure, the projections may also be formed in a straight line on each quadrangle with respect to the rectangular light emitting chip.
또한 본 실시예에서 상기 트랜치(21)의 외측에 소정 거리 이격되어 보조트랜치(22)가 더욱 형성된다. 상기 보조트랜치(22)는 상기 제1매질(15)의 도포 범위를 2차로 규제하는 보조규제부의 역할을 수행하게 된다.In addition, in the present embodiment, the auxiliary trench 22 is further formed to be spaced apart from the trench 21 by a predetermined distance. The auxiliary trench 22 serves as an auxiliary regulating unit for secondly regulating the application range of the first medium 15.
상기 보조트랜치(22)는 트랜치(21)와 마찬가지로 리드프레임(11)의 바닥면에 함몰 형성되며, 발광 칩(12)의 모서리 부분을 제외한 측면부에만 형성된 구조로 되어 있다. 즉, 본 보조트랜치(22)는 사각형태의 발광 칩에 대해 각 사변에 직선 형태로 배치되어 형성된다.Like the trench 21, the auxiliary trench 22 is recessed in the bottom surface of the lead frame 11, and has a structure formed only in the side portion except for the corner portion of the light emitting chip 12. That is, the auxiliary trench 22 is formed in a straight line at each quadrangle with respect to the rectangular light emitting chip.
또한, 보조규제부로써 상기와 같이 바닥에 함몰된 보조트랜치 구조외에 리드 프레임의 바닥면에 상부로 돌출된 보조돌기가 형성된 구조 역시 본 패키지의 또다른 실시예로서 적용가능하다 할 것이다. 상기 보조규제부가 보조돌기로 이루어진 구조의 경우 보조돌기 역시 사각형태의 발광 칩에 대해 각 사변에 직선 형태로 배치 형성될 수 있다.In addition, in addition to the auxiliary trench structure recessed in the bottom as the auxiliary control portion, a structure in which an auxiliary protrusion protruding upward on the bottom surface of the lead frame is also applicable as another embodiment of the present package. In the case of the structure in which the auxiliary regulating portion is formed of the auxiliary protrusion, the auxiliary protrusion may also be formed in a straight line shape on each quadrangle with respect to the rectangular light emitting chip.
이하 본 실시예에서 다른 구성부의 구조와 그 작용은 이미 언급한 패키지와 동일하므로 그 설명을 생략하도록 한다.Hereinafter, since the structure and operation of other components in the present embodiment are the same as the package already mentioned, description thereof will be omitted.
한편, 도 4a는 본 패키지(30)의 또다른 실시예를 도시한 단면도이고, 도 4b는 도 4a의 D부분의 확대도이다. 4A is a cross-sectional view showing another embodiment of the present package 30, and FIG. 4B is an enlarged view of portion D of FIG. 4A.
상기한 도면에 의하면, 본 패키지(30)는 외부 리플렉터(13)에 반구형태의 렌즈(33)가 몰딩된 구조로 되어 있다. 또한, 발광 칩(12)이 실장되는 리드프레임(11)의 다이패드 부위에 내부 리플렉터(17)가 형성되고, 상기 내부 리플렉터(17) 내의 바닥면에 다운셋부(31)가 함몰 형성된다.According to the above-described drawings, the package 30 has a structure in which a hemispherical lens 33 is molded on the external reflector 13. In addition, an internal reflector 17 is formed in the die pad portion of the lead frame 11 on which the light emitting chip 12 is mounted, and a downset portion 31 is formed in the bottom surface of the internal reflector 17.
상기 다운셋부(31)는 발광 칩 상에 도포되는 제1매질(15)의 도포 범위를 규제하는 규제부로서의 역할을 수행하게 된다. 따라서 상기 발광 칩(12) 상에 제1매질(15)을 도포하게 되면 제1매질이 다운셋부(31) 내로 충진되면서 더 이상 외측으로 퍼져 나가는 것이 방지되어 발광 칩만을 정확한 두께와 형태로써 감쌀 수 있게 되는 것이다.The downset part 31 serves as a regulating part for regulating the application range of the first medium 15 applied on the light emitting chip. Therefore, when the first medium 15 is coated on the light emitting chip 12, the first medium is filled into the downset part 31 and is prevented from spreading to the outside any more, so that only the light emitting chip can be wrapped in the correct thickness and shape. Will be.
상기 다운셋부(31)는 내부 리플렉터(17) 바닥면에서 단턱이 지도록 함몰 형성된 구조로 되어 있다. 상기 다운셋부(31)의 형태는 발광 칩(12)과 대응되는 형태로 이루어지며, 그 크기는 발광 칩보다 소정 길이 더 큰 구조로 되어 있다. 또한, 상기 다운셋부(31)의 형성 깊이에 대해서는 특별히 한정되지 않는다.The downset part 31 has a structure in which a stepped portion is formed at the bottom of the inner reflector 17. The downset part 31 has a shape corresponding to the light emitting chip 12, and the size of the downset part 31 is larger than a light emitting chip. In addition, the formation depth of the said downset part 31 is not specifically limited.
이와같이 상기 다운셋부(31)가 발광 칩보다 약간 큰 크기로 형성됨으로써, 상기 다운셋부(31)의 내측면과 상기 발광 칩의 외측면 사이에 간격이 있게 된다. As such, the downset part 31 is formed to be slightly larger than the light emitting chip, so that there is a gap between the inner surface of the downset part 31 and the outer surface of the light emitting chip.
상기 발광 칩(12)과 다운셋부(31)의 내측면 사이의 이격거리는 상기 발광 칩 상에 도포되는 제1매질(15)의 두께와 대응되는 구조로 되어 있다. 이에 발광 칩(12) 상에 제1매질(15)을 도포하게 되면 발광 칩의 전체 면에 대해 제1매질의 두께가 일정하게 된다.The separation distance between the light emitting chip 12 and the inner surface of the downset part 31 has a structure corresponding to the thickness of the first medium 15 applied on the light emitting chip. Accordingly, when the first medium 15 is coated on the light emitting chip 12, the thickness of the first medium is constant with respect to the entire surface of the light emitting chip 12.
또한 본 실시예에서 상기 다운셋부(31)의 외측에 소정 거리 이격되어 보조트랜치(32)가 더욱 형성된다. 상기 보조트랜치(32)는 상기 제1매질(15)의 도포 범위를 2차로 규제하는 보조규제부의 역할을 수행하게 된다.In addition, in the present embodiment, the auxiliary trench 32 is further formed to be spaced apart from the outside of the downset part 31 by a predetermined distance. The auxiliary trench 32 plays a role of an auxiliary regulating unit that secondly regulates an application range of the first medium 15.
상기 보조트랜치(32)는 리드프레임의 바닥면에 함몰 형성되며, 상기 보조트랜치의 함몰 깊이나 그 형성 폭 및 다운셋부(31)와의 이격 거리에 대해서는 특별히 한정되지 않는다.The auxiliary trench 32 is recessed in the bottom surface of the lead frame, and is not particularly limited in terms of the depth of depression of the auxiliary trench, its width, and the distance from the downset portion 31.
이하 본 실시예에서 다른 구성부의 구조와 그 작용은 이미 언급한 패키지와 동일하므로 그 설명을 생략하도록 한다.Hereinafter, since the structure and operation of other components in the present embodiment are the same as the package already mentioned, description thereof will be omitted.
한편, 도 5a 및 도 5b와 도 6a 및 도 6b는 각각 또다른 실시예의 패키지로써 트랜치의 구조에 대해 도시하고 있다.5A and 5B and 6A and 6B, respectively, illustrate the structure of the trench as a package of another embodiment.
도 5a 및 도 5b에 도시된 바와 같이 본 실시예의 패키지(40)는 리드프레임(11)에 형성되는 트랜치(41)와 보조트랜치(42)가 원호형태의 단면구조로 이루어진다.As shown in FIGS. 5A and 5B, the package 40 according to the present embodiment has an arc-shaped cross-sectional structure of the trench 41 and the auxiliary trench 42 formed in the lead frame 11.
또한, 도 6a 및 도 6b에 도시된 바와 같이 본 실시예의 패키지(50)는 리드프레임(11)에 형성되는 트랜치(51)와 보조트랜치(52)가 삼각형태의 단면구조로 이루어진다.6A and 6B, the package 50 of the present embodiment has a triangular cross-sectional structure of the trench 51 and the auxiliary trench 52 formed in the lead frame 11.
상기한 트랜치 또는 보조트랜치의 단면구조를 제외하고 다른 구성부의 구조와 그 작용은 이미 언급한 패키지와 동일하다.Except for the cross-sectional structure of the trench or auxiliary trench described above, the structure and the function of the other components are the same as those of the aforementioned package.
이상 설명한 실시예들에 있어서 플레이트는 모두 리드 프레임인 경우로 한정하였으나 특허청구범위 상의 플레이트는 반드시 리드 프레임에 한정되지 않는다. 예컨대, 위 실시예들에 있어 외부 리플렉터(13)를 형성하는 수지재의 형상을 조정하여 이 수지재에 발광 칩을 접합시키고 전술한 바와 같은 규제부를 형성할 수도 있음은 물론이다.In the above-described embodiments, the plates are all limited to the case of the lead frame, but the plate on the claims is not necessarily limited to the lead frame. For example, in the above embodiments, the shape of the resin material forming the external reflector 13 may be adjusted to bond the light emitting chip to the resin material and form the restriction portion as described above.
이하, 본 발광다이오드 패키지의 제조과정에 대해 도 7과 도 8을 참조하여 설명하면 다음과 같다. 이하 본 제조과정은 트랜치(18)와 보조트랜치(19)를 구비한 패키지(10)의 제조를 예로서 설명하도록 한다.Hereinafter, a manufacturing process of the light emitting diode package will be described with reference to FIGS. 7 and 8. Hereinafter, the manufacturing process will be described by way of example the manufacture of a package 10 having a trench 18 and an auxiliary trench 19.
먼저 리드프레임은 발광 칩이 실장되는 다이패드 부위에 발광 칩의 실장 위치에서 소정 거리 이격되어 트랜치와 보조트랜치를 형성한다.(S100)First, the lead frame forms a trench and an auxiliary trench spaced apart a predetermined distance from the mounting position of the light emitting chip on the die pad where the light emitting chip is mounted (S100).
상기 트랜치와 보조트랜치는 리드프레임 바닥면에서 함몰형성시킨 것으로 에칭공정 또는 금형 스템핑 공정이나 다운셋 공정을 통해 형성될 수 있다.The trench and the auxiliary trench are recessed at the bottom of the lead frame and may be formed through an etching process, a mold stamping process, or a downset process.
여기서 상기 트랜치와 보조트랜치를 형성하기 전에 리드프레임의 다이패드 부위에 리드프레임의 바닥면보다 함몰되도록 하여 반사컵 역할을 하는 내부 리플렉터를 더욱 형성할 수 있다. 이와 같이 내부 리플렉터를 형성하는 경우 상기 트랜치와 보조트랜치는 상기 내부 리플렉터 내에 형성되게 된다.Here, before forming the trench and the auxiliary trench, an inner reflector serving as a reflective cup may be further formed by recessing the die pad portion of the lead frame than the bottom surface of the lead frame. When forming the inner reflector as described above, the trench and the auxiliary trench are formed in the inner reflector.
상기와 같이 트랜치와 보조트랜치가 형성되면, 상기 리드프레임의 다이패드 주변에 반사도가 높은 재질의 열경화성 및 가소성 수지로 사출 또는 트랜스퍼 몰딩하여 외부 리플렉터를 형성한다.When the trench and the auxiliary trench are formed as described above, an external reflector is formed by injection or transfer molding of thermosetting and plastic resin of high reflectivity material around the die pad of the lead frame.
외부 리플렉터가 형성되면 상기 트랜치 중간부에 발광 칩을 실장하고 다이본딩된 발광 칩은 리드프레임과의 전기적 연결을 위해 통전 와이어로 와이어 본딩과정을 거치게 된다.(S110 ~ S120)When the external reflector is formed, the light emitting chip is mounted in the middle of the trench and the die bonded light emitting chip is subjected to wire bonding process with an energizing wire for electrical connection with the lead frame.
그리고 다이본딩된 발광 칩 상에 다른 발광 파장 특성을 가지는 형광체를 함유하는 제1매질을 도포하는 공정을 거치게 된다.(S130)In addition, a process of coating a first medium containing phosphors having different emission wavelength characteristics on the die-bonded light emitting chip is performed (S130).
여기서 형광체가 포함된 제1매질(15)은 도 7에 도시된 바와 같이 실린지(60)에 담긴 후 정량 토출설비를 통해 발광 칩(12)이 실장된 리드프레임(11)의 트랜치(18)로 둘러쌓인 영역에 포팅된다. 이 과정에서 제1매질의 점도 유지를 위해 온도, 습도, 기압을 일정하게 유지한다.In this case, the first medium 15 including the phosphor is contained in the syringe 60 as shown in FIG. 7, and then the trench 18 of the lead frame 11 in which the light emitting chip 12 is mounted through a fixed amount discharge facility. Ported to an enclosed area. In this process, temperature, humidity, and air pressure are kept constant to maintain the viscosity of the first medium.
상기와 같이 포팅된 제1매질은 제1매질의 점도와 표면장력 특성으로 인하여 트랜치를 벗어나지 못하고 일정하게 발광 칩 주변을 감싸면서 일정한 형태로 경화되어진다. 즉, 트랜치가 제1매질의 도포 영역을 한정하는 역할을 수행하게 되는 것이다. 이에 제1매질은 발광 칩 전체 면에 걸쳐 일정한 두께와 양으로 감싸게 되어 제1매질에 포함된 형광체의 입자수를 동일하게 제공하게 되는 것이다. 따라서 포토 루미네센스의 광량과 형광체의 비가 방사 각도에 관계없이 전 영역에 일정하게 유지되어 균일한 색상을 표현할 수 있게 된다.The potted first medium is hardened to a certain shape while constantly surrounding the light emitting chip without leaving the trench due to the viscosity and surface tension characteristics of the first medium. In other words, the trench serves to define the application area of the first medium. Accordingly, the first medium is wrapped in a predetermined thickness and quantity over the entire surface of the light emitting chip to provide the same number of particles of the phosphor included in the first medium. Therefore, the light amount of the photo luminescence and the ratio of the phosphor are kept constant throughout the entire area regardless of the emission angle, thereby providing a uniform color.
이는 형광체의 여기 발광 에너지와 발광 칩의 가시발광 에너지 비가 일정하게 하여 동일한 색상을 표현할 수 있게 되는 원리로, 두 발광 비율로 인해 발광 색상이 정해지는 형광체를 이용한 발광다이오드에 모두 적용될 수 있다. 또한, 이후 광 방사각을 조정하는 외부 렌즈 형성시 발광원의 색 균일로 인해 렌즈 설계시 보다 다양한 지향각을 갖고 색 균일도를 가지는 렌즈를 용이하게 설계할 수 있게 된다.This is a principle in which the ratio of the excitation emission energy of the phosphor and the visible emission energy of the light emitting chip is constant so that the same color can be expressed, and it can be applied to both light emitting diodes using phosphors whose emission colors are determined by two emission ratios. In addition, since the color uniformity of the light emitting source when forming the external lens for adjusting the light emission angle, it is possible to easily design a lens having a more diverse orientation angle and color uniformity when designing the lens.
또한, 상기와 같이 실린지를 통해 패키지 내에서 발광 칩 상에 제1매질이 정량 토출됨에 따라, 제조되는 모든 패키지에 대해 형광체의 함량과 발광 칩을 도포하는 제1매질의 양을 정량으로 일정하게 맞출 수 있게 된다. 따라서 모든 패키지에 대해 동일한 색상을 재현할 수 있게 되는 것이다.In addition, as the first medium is quantitatively discharged onto the light emitting chip in the package through the syringe as described above, the content of the phosphor and the amount of the first medium to which the light emitting chip is applied are uniformly adjusted for all the manufactured packages. It becomes possible. Thus, the same color can be reproduced for all packages.
도포된 제1매질이 건조되면 외부 리플렉터 내에 투명재질의 수지봉지제를 주입하여 충진하거나 트랜스퍼 몰딩하여 원하는 형태로 렌즈를 성형한다.(S140)When the applied first medium is dried, a resin encapsulant of a transparent material is injected into the external reflector to fill or transfer molding to form a lens in a desired shape.
상기 수지봉지제 경화공정을 거쳐 수지가 경화되면 각 소자를 트리밍 또는 포밍공정을 통해 개별화하여 발광다이오드 패키지를 제조할 수 있게 된다.(S150)When the resin is cured through the resin encapsulation curing process, each device may be individualized through a trimming or forming process to manufacture a light emitting diode package.
상기한 과정을 거침에 따라 발광원이 발광 칩에서 형광체로 전환되면서 반구 형태의 방사패턴으로 동일한 색상으로 방출되며, 발광원과 형광체의 도달구간이 최소화되어 광효율을 극대화시킬 수 있는 발광다이오드 패키지를 얻을 수 있게 된다. According to the above process, the light emitting source is converted from the light emitting chip to the phosphor and is emitted in the same color with a hemispherical radiation pattern, and the light emitting diode package can be maximized by minimizing the arrival period of the light emitting source and the phosphor. It becomes possible.
또한, 내부 리플렉터와 외부 리플렉터에 의해 전면방향으로 광 집중과 그 집중도를 높일 수 있는 발광다이오드 패키지를 얻을 수 있게 된다.In addition, it is possible to obtain a light emitting diode package capable of increasing light concentration and concentration in the front direction by the internal reflector and the external reflector.
상기에서는 본 패키지의 바람직한 실시예에 대하여 설명하였지만, 본 발명은 이에 한정되는 것이 아니고 특허청구범위와 발명의 상세한 설명 및 첨부한 도면의 범위 안에서 여러 가지로 변형하여 실시하는 것이 가능하고 이 또한 본 발명의 범위에 속하는 것은 당연하다.Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to the range of.

Claims (17)

  1. 플레이트;plate;
    상기 플레이트에 접합되는 발광 칩;A light emitting chip bonded to the plate;
    상기 발광 칩을 덮도록 상기 플레이트 상에 형성되고 상기 발광 칩의 발광 파장에 의해 독립된 파장의 빛을 발산하는 제1매질;A first medium formed on the plate to cover the light emitting chip and emitting light having a wavelength independent of the light emitting wavelength of the light emitting chip;
    상기 제1매질 상에 형성되고 상기 발광 칩과 제1매질로부터 나오는 빛이 투과되는 제2매질; 및A second medium formed on the first medium and transmitting light emitted from the light emitting chip and the first medium; And
    상기 플레이트에 형성되어 상기 제1매질의 범위를 설정하는 규제부;를 포함하는 발광다이오드 패키지.And a regulation unit formed on the plate to set a range of the first medium.
  2. 제 1 항에 있어서, The method of claim 1,
    상기 규제부는 상기 발광 칩에서 이격되어 발광 칩의 형태와 대응되는 형태로 형성되는 트랜치를 포함하는 발광다이오드 패키지.The control unit comprises a trench spaced apart from the light emitting chip to form a shape corresponding to the shape of the light emitting chip.
  3. 제 2 항에 있어서, The method of claim 2,
    상기 트랜치는 다각형 또는 원호형의 단면구조인 발광다이오드 패키지. The trench is a light emitting diode package having a polygonal or arc-shaped cross-sectional structure.
  4. 제 1 항에 있어서, The method of claim 1,
    상기 규제부는 상기 발광 칩에서 이격되어 발광 칩의 형태와 대응되는 형태로 형성되는 돌기를 포함하는 발광다이오드 패키지.The regulation unit includes a light emitting diode package including a projection spaced apart from the light emitting chip to have a shape corresponding to the shape of the light emitting chip.
  5. 제 4항에 있어서, The method of claim 4, wherein
    상기 돌기는 다각형 또는 원호형의 단면구조인 발광다이오드 패키지. The protrusion is a light emitting diode package having a polygonal or arc-shaped cross-sectional structure.
  6. 제 1 항에 있어서, The method of claim 1,
    상기 규제부는 발광 칩 실장 부위에 함몰 형성된 다운셋부를 포함하는 발광 다이오드 패키지.The control unit includes a light emitting diode package including a downset formed in the light emitting chip mounting portion.
  7. 제 2 항에 있어서, The method of claim 2,
    상기 트랜치는 상기 발광 칩의 측면과 대응되는 위치에만 형성되는 발광다이오드 패키지.The trench is a light emitting diode package formed only at a position corresponding to the side of the light emitting chip.
  8. 제 2 항에 있어서, The method of claim 2,
    상기 트랜치는 상기 발광 칩을 중심으로 폐곡선을 이루는 발광다이오드 패키지.The trench is a light emitting diode package forming a closed curve around the light emitting chip.
  9. 제 1 항에 있어서, The method of claim 1,
    상기 규제부 외측에 형성되는 보조트랜치나 보조 돌기를 더욱 포함하는 발광다이오드 패키지.A light emitting diode package further comprising an auxiliary trench or an auxiliary protrusion formed outside the regulation unit.
  10. 제 1 항에 있어서, The method of claim 1,
    상기 플레이트에 내부 리플렉터가 형성되어 상기 발광 칩이 내부 리플렉터 내에 실장되고, 상기 내부 리플렉터 외측에 외부 리플렉터가 형성되어 상기 외부 An inner reflector is formed on the plate so that the light emitting chip is mounted in an inner reflector, and an outer reflector is formed outside the inner reflector to form the outer reflector.
    리플렉터 내에 제2매질이 충진되는 발광다이오드 패키지.A light emitting diode package in which a second medium is filled in the reflector.
  11. 제1항에 있어서,The method of claim 1,
    상기 플레이트는 리드프레임인 발광 다이오드 패키지.The plate is a lead frame LED package.
  12. 발광 칩이 실장되는 플레이트에 발광 칩의 주변으로 규제부를 형성하는 단계;Forming a control unit around the light emitting chip on a plate on which the light emitting chip is mounted;
    상기 플레이트에 발광 칩을 다이본딩하는 단계;Die bonding a light emitting chip to the plate;
    상기 규제부에 의해 설정된 범위 내에 상기 발광 칩의 발광 파장에 의해 독립된 파장의 빛을 발산하는 제1매질을 도포하여 상기 발광 칩을 감싸도록 하는 단계; 및Coating a light emitting chip to cover the light emitting chip by applying a first medium that emits light having a wavelength independent of the light emitting wavelength of the light emitting chip within a range set by the control unit; And
    상기 제1매질 상에 제1매질로부터 나오는 빛이 투과되는 제2매질을 도포하는 단계;를 포함하는 발광다이오드 패키지 제조방법.And applying a second medium through which light emitted from the first medium is transmitted on the first medium.
  13. 제 12 항에 있어서, The method of claim 12,
    상기 규제부 형성 전에 발광 칩이 실장되는 플레이트에 내부 리플렉터를 형성하는 공정을 더욱 포함하는 발광다이오드 패키지 제조방법.And forming an internal reflector on a plate on which the light emitting chip is mounted before forming the regulation unit.
  14. 제 12 항에 있어서, The method of claim 12,
    상기 규제부는 상기 발광 칩에서 이격되어 발광 칩의 형태와 대응되는 형태로 형성되는 트랜치를 포함하는 발광다이오드 패키지 제조방법.The control unit includes a trench spaced apart from the light emitting chip to form a shape corresponding to the shape of the light emitting chip.
  15. 제 12 항에 있어서, The method of claim 12,
    상기 규제부는 상기 발광 칩에서 이격되어 발광 칩의 형태와 대응되는 형태로 형성되는 돌기를 포함하는 발광다이오드 패키지 제조방법.The regulation unit includes a light emitting diode package manufacturing method comprising a projection spaced apart from the light emitting chip to have a shape corresponding to the shape of the light emitting chip.
  16. 제 12 항에 있어서, The method of claim 12,
    상기 규제부는 발광 칩 실장 부위에 함몰 형성된 다운셋부를 포함하는 발광다이오드 패키지 제조방법.The regulation unit includes a light emitting diode package manufacturing method comprising a downset formed recessed in the light emitting chip mounting portion.
  17. 제 12 항에 있어서, The method of claim 12,
    상기 플레이트는 리드프레임인 발광다이오드 패키지 제조방법.The plate is a lead frame light emitting diode package manufacturing method.
PCT/KR2009/001191 2008-03-21 2009-03-10 Led lead frame, led package using the same and manufacturing method thereof WO2009116744A2 (en)

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