WO2009075045A1 - 薄膜トランジスタアレイ基板及びそれを備えた表示パネル並びに薄膜トランジスタアレイ基板の製造方法 - Google Patents

薄膜トランジスタアレイ基板及びそれを備えた表示パネル並びに薄膜トランジスタアレイ基板の製造方法 Download PDF

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Publication number
WO2009075045A1
WO2009075045A1 PCT/JP2008/002117 JP2008002117W WO2009075045A1 WO 2009075045 A1 WO2009075045 A1 WO 2009075045A1 JP 2008002117 W JP2008002117 W JP 2008002117W WO 2009075045 A1 WO2009075045 A1 WO 2009075045A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
array substrate
transistor array
electrode
Prior art date
Application number
PCT/JP2008/002117
Other languages
English (en)
French (fr)
Inventor
Hidetoshi Nakagawa
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to US12/747,455 priority Critical patent/US8314424B2/en
Priority to CN200880119593.6A priority patent/CN101889302B/zh
Publication of WO2009075045A1 publication Critical patent/WO2009075045A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

　ＴＦＴ（５）は、ゲート電極（１２ａ）と、ゲート絶縁膜（１３）を介してゲート電極（１２ａ）に重なる第１半導体部（１４ａ）と、ゲート絶縁膜（１３）及び第１半導体部（１４ａ）を介してゲート電極（１２ａ）に重なるソース電極（１５ａ）と、ゲート絶縁膜（１３）及び第１半導体部（１４ａ）を介してゲート電極（１２ａ）に重なるドレイン電極（１５ｂ）と、ゲート絶縁膜（１３）及びソース電極（１５ａ）の間にゲート電極（１２ａ）に重なる第２半導体部（１４ｂ）と、ゲート絶縁膜（１３）及び第２半導体部（１４ｂ）を介してゲート電極（１２ａ）に重なる導電部（１５ｃ）とを備え、ソース電極（１５ａ）及びドレイン電極（１５ｂ）の短絡部、第２半導体部（１４ｂ）並びに導電部（１５ｃ）を含むスイッチング素子により、ソース線（１５ａ）及び画素電極（１７）を導通させる。
PCT/JP2008/002117 2007-12-11 2008-08-05 薄膜トランジスタアレイ基板及びそれを備えた表示パネル並びに薄膜トランジスタアレイ基板の製造方法 WO2009075045A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/747,455 US8314424B2 (en) 2007-12-11 2008-08-05 Thin film transistor array substrate, display panel comprising the same, and method for manufacturing thin film transistor array substrate
CN200880119593.6A CN101889302B (zh) 2007-12-11 2008-08-05 薄膜晶体管阵列基板和具备它的显示面板以及薄膜晶体管阵列基板的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-320163 2007-12-11
JP2007320163 2007-12-11

Publications (1)

Publication Number Publication Date
WO2009075045A1 true WO2009075045A1 (ja) 2009-06-18

Family

ID=40755297

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002117 WO2009075045A1 (ja) 2007-12-11 2008-08-05 薄膜トランジスタアレイ基板及びそれを備えた表示パネル並びに薄膜トランジスタアレイ基板の製造方法

Country Status (3)

Country Link
US (1) US8314424B2 (ja)
CN (1) CN101889302B (ja)
WO (1) WO2009075045A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101866918A (zh) * 2010-06-28 2010-10-20 信利半导体有限公司 一种薄膜晶体管阵列基板、显示器及其制造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013161895A (ja) * 2012-02-03 2013-08-19 Sony Corp 薄膜トランジスタ、表示装置および電子機器
CN103543565A (zh) * 2012-07-13 2014-01-29 群康科技(深圳)有限公司 显示器
US9818343B2 (en) 2015-04-30 2017-11-14 Samsung Display Co., Ltd. Organic light emitting diode display and method for repairing the same
CN106206746B (zh) * 2016-09-28 2020-07-24 京东方科技集团股份有限公司 薄膜晶体管、goa电路、显示基板和显示装置
JP2019184864A (ja) * 2018-04-12 2019-10-24 シャープ株式会社 表示装置
JP7352826B2 (ja) * 2019-10-21 2023-09-29 セイコーエプソン株式会社 電気光学装置および電子機器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07104311A (ja) * 1993-09-29 1995-04-21 Toshiba Corp 液晶表示装置
JP2005175109A (ja) * 2003-12-10 2005-06-30 Fujitsu Display Technologies Corp 薄膜トランジスタ及びそれを備えた表示装置用基板及びそれを用いた液晶表示装置並びに欠陥修正方法
WO2006126460A1 (ja) * 2005-05-23 2006-11-30 Sharp Kabushiki Kaisha アクティブマトリクス基板、表示装置および画素欠陥修正方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4001712B2 (ja) 2000-03-29 2007-10-31 シャープ株式会社 液晶表示装置の欠陥修復方法
JP2005250448A (ja) * 2004-02-05 2005-09-15 Sharp Corp 電子素子、表示素子及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07104311A (ja) * 1993-09-29 1995-04-21 Toshiba Corp 液晶表示装置
JP2005175109A (ja) * 2003-12-10 2005-06-30 Fujitsu Display Technologies Corp 薄膜トランジスタ及びそれを備えた表示装置用基板及びそれを用いた液晶表示装置並びに欠陥修正方法
WO2006126460A1 (ja) * 2005-05-23 2006-11-30 Sharp Kabushiki Kaisha アクティブマトリクス基板、表示装置および画素欠陥修正方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101866918A (zh) * 2010-06-28 2010-10-20 信利半导体有限公司 一种薄膜晶体管阵列基板、显示器及其制造方法
CN101866918B (zh) * 2010-06-28 2012-10-03 信利半导体有限公司 一种薄膜晶体管阵列基板、显示器及其制造方法

Also Published As

Publication number Publication date
US8314424B2 (en) 2012-11-20
CN101889302B (zh) 2012-08-22
CN101889302A (zh) 2010-11-17
US20100289025A1 (en) 2010-11-18

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