WO2009072213A1 - 抵抗変化型メモリ装置、不揮発性メモリ装置、およびその製造方法 - Google Patents
抵抗変化型メモリ装置、不揮発性メモリ装置、およびその製造方法 Download PDFInfo
- Publication number
- WO2009072213A1 WO2009072213A1 PCT/JP2007/073708 JP2007073708W WO2009072213A1 WO 2009072213 A1 WO2009072213 A1 WO 2009072213A1 JP 2007073708 W JP2007073708 W JP 2007073708W WO 2009072213 A1 WO2009072213 A1 WO 2009072213A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- memory device
- resistance change
- type memory
- manufacturing
- oxide film
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 4
- 150000004706 metal oxides Chemical class 0.000 abstract 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/009—Write using potential difference applied between cell electrodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/34—Material includes an oxide or a nitride
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Abstract
抵抗変化型メモリ装置は、下部電極と、前記下部電極上に形成され、抵抗値を変化させうる金属酸化物膜と、前記金属酸化物膜上に形成された上部電極と、 を備え、前記金属酸化物膜は、該金属酸化物膜を構成する金属元素を含む第1の部位と、該第1の部位より酸素を多く含む第2の部位を有する。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009544546A JP5170107B2 (ja) | 2007-12-07 | 2007-12-07 | 抵抗変化型メモリ装置、不揮発性メモリ装置、およびその製造方法 |
PCT/JP2007/073708 WO2009072213A1 (ja) | 2007-12-07 | 2007-12-07 | 抵抗変化型メモリ装置、不揮発性メモリ装置、およびその製造方法 |
US12/793,270 US8338814B2 (en) | 2007-12-07 | 2010-06-03 | Resistive random access memory, nonvolatile memory, and method of manufacturing resistive random access memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/073708 WO2009072213A1 (ja) | 2007-12-07 | 2007-12-07 | 抵抗変化型メモリ装置、不揮発性メモリ装置、およびその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/793,270 Continuation US8338814B2 (en) | 2007-12-07 | 2010-06-03 | Resistive random access memory, nonvolatile memory, and method of manufacturing resistive random access memory |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009072213A1 true WO2009072213A1 (ja) | 2009-06-11 |
Family
ID=40717398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/073708 WO2009072213A1 (ja) | 2007-12-07 | 2007-12-07 | 抵抗変化型メモリ装置、不揮発性メモリ装置、およびその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8338814B2 (ja) |
JP (1) | JP5170107B2 (ja) |
WO (1) | WO2009072213A1 (ja) |
Cited By (17)
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WO2009125777A1 (ja) * | 2008-04-07 | 2009-10-15 | 日本電気株式会社 | 抵抗変化素子及びその製造方法 |
WO2010021134A1 (ja) * | 2008-08-20 | 2010-02-25 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置およびメモリセルの形成方法 |
JP2010135541A (ja) * | 2008-12-04 | 2010-06-17 | Sharp Corp | 可変抵抗素子並びにその製造方法 |
WO2010109876A1 (ja) * | 2009-03-25 | 2010-09-30 | パナソニック株式会社 | 抵抗変化素子の駆動方法及び不揮発性記憶装置 |
JP2011066285A (ja) * | 2009-09-18 | 2011-03-31 | Toshiba Corp | 不揮発性記憶素子および不揮発性記憶装置 |
WO2011052239A1 (ja) * | 2009-11-02 | 2011-05-05 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置およびメモリセルの形成方法 |
CN102214790A (zh) * | 2011-06-10 | 2011-10-12 | 清华大学 | 一种具有自整流效应的阻变存储器 |
JP2012507856A (ja) * | 2008-10-29 | 2012-03-29 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | 電気的に作動するデバイス及びそのデバイスにおけるドーパントの形成を制御する方法 |
WO2012042897A1 (ja) * | 2010-10-01 | 2012-04-05 | パナソニック株式会社 | 不揮発性記憶素子の製造方法および不揮発性記憶素子 |
JP5459515B2 (ja) * | 2009-02-20 | 2014-04-02 | 株式会社村田製作所 | 抵抗記憶素子およびその使用方法 |
US9018083B2 (en) | 2011-05-04 | 2015-04-28 | Hewlett-Packard Development Company, L.P. | Electrically actuated device and method of controlling the formation of dopants therein |
KR20150047562A (ko) * | 2012-08-21 | 2015-05-04 | 마이크론 테크놀로지, 인크. | 단극성 메모리 디바이스들 |
US10453523B2 (en) | 2016-04-21 | 2019-10-22 | Tdk Corporation | Magnetic wall utilization-analog memory element and magnetic wall utilization analog memory |
US10482987B2 (en) | 2016-04-21 | 2019-11-19 | Tdk Corporation | Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory |
US10553299B2 (en) | 2017-04-14 | 2020-02-04 | Tdk Corporation | Magnetic domain wall type analog memory element, magnetic domain wall type analog memory, nonvolatile logic circuit, and magnetic neuro-element |
US10672446B2 (en) | 2016-06-10 | 2020-06-02 | Tdk Corporation | Exchange bias utilization type magnetization rotational element, exchange bias utilization type magnetoresistance effect element, exchange bias utilization type magnetic memory, non-volatile logic circuit, and magnetic neuron element |
US10916480B2 (en) | 2017-04-14 | 2021-02-09 | Tdk Corporation | Magnetic wall utilization type analog memory device, magnetic wall utilization type analog memory, nonvolatile logic circuit, and magnetic neuro device |
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KR100982424B1 (ko) * | 2006-11-28 | 2010-09-15 | 삼성전자주식회사 | 저항 메모리 소자의 제조 방법 |
US8062918B2 (en) * | 2008-05-01 | 2011-11-22 | Intermolecular, Inc. | Surface treatment to improve resistive-switching characteristics |
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JP2013004655A (ja) * | 2011-06-15 | 2013-01-07 | Sharp Corp | 不揮発性半導体記憶装置およびその製造方法 |
US8787065B2 (en) | 2011-10-18 | 2014-07-22 | Micron Technology, Inc. | Apparatuses and methods for determining stability of a memory cell |
US8958233B2 (en) | 2011-10-18 | 2015-02-17 | Micron Technology, Inc. | Stabilization of resistive memory |
US8730708B2 (en) | 2011-11-01 | 2014-05-20 | Micron Technology, Inc. | Performing forming processes on resistive memory |
US9269425B2 (en) * | 2011-12-30 | 2016-02-23 | Sandisk 3D Llc | Low forming voltage non-volatile storage device |
US9583556B2 (en) | 2012-07-19 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process-compatible decoupling capacitor and method for making the same |
US8896096B2 (en) * | 2012-07-19 | 2014-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process-compatible decoupling capacitor and method for making the same |
US9130162B2 (en) * | 2012-12-20 | 2015-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistance variable memory structure and method of forming the same |
JP6021688B2 (ja) * | 2013-02-25 | 2016-11-09 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその制御方法 |
US9153779B2 (en) | 2013-03-22 | 2015-10-06 | Kabushiki Kaisha Toshiba | Resistance change memory element and resistance change memory |
US9112148B2 (en) | 2013-09-30 | 2015-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | RRAM cell structure with laterally offset BEVA/TEVA |
US9178144B1 (en) | 2014-04-14 | 2015-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | RRAM cell with bottom electrode |
US9209392B1 (en) | 2014-10-14 | 2015-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | RRAM cell with bottom electrode |
US10128438B2 (en) | 2016-09-09 | 2018-11-13 | Arm Limited | CEM switching device |
US10103327B2 (en) | 2016-09-14 | 2018-10-16 | Arm Limited | CEM switching device |
US10121967B2 (en) * | 2016-11-29 | 2018-11-06 | Arm Limited | CEM switching device |
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US11636316B2 (en) | 2018-01-31 | 2023-04-25 | Cerfe Labs, Inc. | Correlated electron switch elements for brain-based computing |
CN111106238B (zh) * | 2019-11-19 | 2023-08-29 | 中山大学 | 一种基于金属掺杂的双向阈值选通器及其制备方法 |
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- 2007-12-07 JP JP2009544546A patent/JP5170107B2/ja not_active Expired - Fee Related
- 2007-12-07 WO PCT/JP2007/073708 patent/WO2009072213A1/ja active Application Filing
-
2010
- 2010-06-03 US US12/793,270 patent/US8338814B2/en not_active Expired - Fee Related
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Cited By (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009125777A1 (ja) * | 2008-04-07 | 2009-10-15 | 日本電気株式会社 | 抵抗変化素子及びその製造方法 |
US8373149B2 (en) | 2008-04-07 | 2013-02-12 | Nec Corporation | Resistance change element and manufacturing method thereof |
JPWO2010021134A1 (ja) * | 2008-08-20 | 2012-01-26 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置 |
JP4555397B2 (ja) * | 2008-08-20 | 2010-09-29 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置 |
US8553444B2 (en) | 2008-08-20 | 2013-10-08 | Panasonic Corporation | Variable resistance nonvolatile storage device and method of forming memory cell |
WO2010021134A1 (ja) * | 2008-08-20 | 2010-02-25 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置およびメモリセルの形成方法 |
US8830730B2 (en) | 2008-08-20 | 2014-09-09 | Panasonic Corporation | Variable resistance nonvolatile storage device and method of forming memory cell |
JP2012507856A (ja) * | 2008-10-29 | 2012-03-29 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | 電気的に作動するデバイス及びそのデバイスにおけるドーパントの形成を制御する方法 |
US8766228B2 (en) | 2008-10-29 | 2014-07-01 | Hewlett-Packard Development Company, L.P. | Electrically actuated device and method of controlling the formation of dopants therein |
JP2010135541A (ja) * | 2008-12-04 | 2010-06-17 | Sharp Corp | 可変抵抗素子並びにその製造方法 |
JP5459515B2 (ja) * | 2009-02-20 | 2014-04-02 | 株式会社村田製作所 | 抵抗記憶素子およびその使用方法 |
US8279658B2 (en) | 2009-03-25 | 2012-10-02 | Panasonic Corporation | Method of programming variable resistance element and nonvolatile storage device |
US8395930B2 (en) | 2009-03-25 | 2013-03-12 | Panasonic Corporation | Method of programming variable resistance element and nonvolatile storage device |
WO2010109876A1 (ja) * | 2009-03-25 | 2010-09-30 | パナソニック株式会社 | 抵抗変化素子の駆動方法及び不揮発性記憶装置 |
JP2011066285A (ja) * | 2009-09-18 | 2011-03-31 | Toshiba Corp | 不揮発性記憶素子および不揮発性記憶装置 |
US8450715B2 (en) | 2009-09-18 | 2013-05-28 | Kabushiki Kaisha Toshiba | Nonvolatile metal oxide memory element and nonvolatile memory device |
WO2011052239A1 (ja) * | 2009-11-02 | 2011-05-05 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置およびメモリセルの形成方法 |
WO2012042897A1 (ja) * | 2010-10-01 | 2012-04-05 | パナソニック株式会社 | 不揮発性記憶素子の製造方法および不揮発性記憶素子 |
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US8338814B2 (en) | 2012-12-25 |
US20100237317A1 (en) | 2010-09-23 |
JP5170107B2 (ja) | 2013-03-27 |
JPWO2009072213A1 (ja) | 2011-04-21 |
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