WO2009066466A1 - 窒化物半導体および窒化物半導体の結晶成長方法ならびに窒化物半導体発光素子 - Google Patents
窒化物半導体および窒化物半導体の結晶成長方法ならびに窒化物半導体発光素子 Download PDFInfo
- Publication number
- WO2009066466A1 WO2009066466A1 PCT/JP2008/003425 JP2008003425W WO2009066466A1 WO 2009066466 A1 WO2009066466 A1 WO 2009066466A1 JP 2008003425 W JP2008003425 W JP 2008003425W WO 2009066466 A1 WO2009066466 A1 WO 2009066466A1
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- Prior art keywords
- nitride semiconductor
- nitride
- growth
- substrate
- face
- Prior art date
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- 150000004767 nitrides Chemical class 0.000 title abstract 12
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 238000002109 crystal growth method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 239000007789 gas Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Lasers (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020107009100A KR101502195B1 (ko) | 2007-11-21 | 2008-11-20 | 질화물 반도체 및 질화물 반도체의 결정 성장 방법 그리고 질화물 반도체 발광 소자 |
EP08852819.5A EP2221856B1 (en) | 2007-11-21 | 2008-11-20 | Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element |
US12/744,163 US8652948B2 (en) | 2007-11-21 | 2008-11-20 | Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-301565 | 2007-11-21 | ||
JP2007301565 | 2007-11-21 | ||
JP2008057694 | 2008-03-07 | ||
JP2008-057694 | 2008-03-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009066466A1 true WO2009066466A1 (ja) | 2009-05-28 |
Family
ID=40667298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/003425 WO2009066466A1 (ja) | 2007-11-21 | 2008-11-20 | 窒化物半導体および窒化物半導体の結晶成長方法ならびに窒化物半導体発光素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8652948B2 (ja) |
EP (1) | EP2221856B1 (ja) |
JP (3) | JP5589278B2 (ja) |
KR (1) | KR101502195B1 (ja) |
TW (1) | TWI490921B (ja) |
WO (1) | WO2009066466A1 (ja) |
Cited By (8)
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WO2010100699A1 (ja) * | 2009-03-06 | 2010-09-10 | パナソニック株式会社 | 窒化物半導体の結晶成長方法および半導体装置の製造方法 |
US20100243988A1 (en) * | 2009-03-27 | 2010-09-30 | Sharp Kabushiki Kaishsa | Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device |
WO2010146808A1 (ja) * | 2009-06-18 | 2010-12-23 | パナソニック株式会社 | 窒化ガリウム系化合物半導体発光ダイオード |
US20110073892A1 (en) * | 2009-09-30 | 2011-03-31 | Sumitomo Electric Industries, Ltd. | Light emitting device |
WO2011070760A1 (ja) * | 2009-12-09 | 2011-06-16 | パナソニック株式会社 | 半導体素子の製造方法 |
US20120049156A1 (en) * | 2010-08-26 | 2012-03-01 | Sharp Kabushiki Kaisha | Nitride semiconductor device and semiconductor optical device |
US8268706B2 (en) | 2009-04-08 | 2012-09-18 | Panasonic Corporation | Semiconductor device manufacturing method |
US8624220B2 (en) | 2008-11-20 | 2014-01-07 | Mitsubishi Chemical Corporation | Nitride semiconductor |
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JP5391661B2 (ja) * | 2007-11-21 | 2014-01-15 | 三菱化学株式会社 | 窒化物半導体の結晶成長方法 |
US8636845B2 (en) * | 2008-06-25 | 2014-01-28 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
US8742459B2 (en) | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
US8878345B2 (en) * | 2010-02-10 | 2014-11-04 | Aetech Corporation | Structural body and method for manufacturing semiconductor substrate |
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US8742460B2 (en) | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
US8643062B2 (en) | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
US8772842B2 (en) | 2011-03-04 | 2014-07-08 | Transphorm, Inc. | Semiconductor diodes with low reverse bias currents |
US8946788B2 (en) | 2011-08-04 | 2015-02-03 | Avogy, Inc. | Method and system for doping control in gallium nitride based devices |
US8901604B2 (en) | 2011-09-06 | 2014-12-02 | Transphorm Inc. | Semiconductor devices with guard rings |
US9257547B2 (en) | 2011-09-13 | 2016-02-09 | Transphorm Inc. | III-N device structures having a non-insulating substrate |
US8598937B2 (en) | 2011-10-07 | 2013-12-03 | Transphorm Inc. | High power semiconductor electronic components with increased reliability |
US10490697B2 (en) | 2011-12-03 | 2019-11-26 | Sensor Electronic Technology, Inc. | Epitaxy technique for growing semiconductor compounds |
US10158044B2 (en) | 2011-12-03 | 2018-12-18 | Sensor Electronic Technology, Inc. | Epitaxy technique for growing semiconductor compounds |
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US9165766B2 (en) | 2012-02-03 | 2015-10-20 | Transphorm Inc. | Buffer layer structures suited for III-nitride devices with foreign substrates |
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JP5949064B2 (ja) * | 2012-03-30 | 2016-07-06 | 三菱化学株式会社 | GaNバルク結晶 |
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US20100243988A1 (en) * | 2009-03-27 | 2010-09-30 | Sharp Kabushiki Kaishsa | Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device |
US8664688B2 (en) * | 2009-03-27 | 2014-03-04 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device |
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WO2010146808A1 (ja) * | 2009-06-18 | 2010-12-23 | パナソニック株式会社 | 窒化ガリウム系化合物半導体発光ダイオード |
JPWO2010146808A1 (ja) * | 2009-06-18 | 2012-11-29 | パナソニック株式会社 | 窒化ガリウム系化合物半導体発光ダイオード |
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WO2011070760A1 (ja) * | 2009-12-09 | 2011-06-16 | パナソニック株式会社 | 半導体素子の製造方法 |
US20120049156A1 (en) * | 2010-08-26 | 2012-03-01 | Sharp Kabushiki Kaisha | Nitride semiconductor device and semiconductor optical device |
Also Published As
Publication number | Publication date |
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EP2221856A4 (en) | 2014-11-26 |
US20100244087A1 (en) | 2010-09-30 |
JP2016029726A (ja) | 2016-03-03 |
US8652948B2 (en) | 2014-02-18 |
JP2009239250A (ja) | 2009-10-15 |
TW200941555A (en) | 2009-10-01 |
JP5812166B2 (ja) | 2015-11-11 |
JP5589278B2 (ja) | 2014-09-17 |
KR101502195B1 (ko) | 2015-03-12 |
KR20100080815A (ko) | 2010-07-12 |
EP2221856B1 (en) | 2020-09-09 |
JP2014209664A (ja) | 2014-11-06 |
TWI490921B (zh) | 2015-07-01 |
EP2221856A1 (en) | 2010-08-25 |
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