WO2009063720A1 - 半導体レーザ - Google Patents

半導体レーザ Download PDF

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Publication number
WO2009063720A1
WO2009063720A1 PCT/JP2008/068873 JP2008068873W WO2009063720A1 WO 2009063720 A1 WO2009063720 A1 WO 2009063720A1 JP 2008068873 W JP2008068873 W JP 2008068873W WO 2009063720 A1 WO2009063720 A1 WO 2009063720A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
clad layer
type clad
semiconductor laser
substrate
Prior art date
Application number
PCT/JP2008/068873
Other languages
English (en)
French (fr)
Inventor
Tsuguki Noma
Minoru Murayama
Satoshi Uchida
Tsutomu Ishikawa
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to US12/734,665 priority Critical patent/US9099841B2/en
Priority to CN2008801197490A priority patent/CN101889374B/zh
Publication of WO2009063720A1 publication Critical patent/WO2009063720A1/ja
Priority to US14/815,748 priority patent/US20150340840A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2227—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties special thin layer sequence

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　動作電流が低く、高温出力時においても安定して発振する半導体レーザを提供する。 　基板（１０）と、基板（１０）上に設けられたｎ型クラッド層（１２）と、ｎ型クラッド層（１２）上に設けられた活性層（１３）と、活性層（１３）上に設けられたＡｌを含有する化合物であり、電流通路となるストライプ状のリッジ構造を有するｐ型クラッド層（１４）と、リッジ構造の上面を除くｐ型クラッド層（１４）の表面に設けられたＡｌを含有する化合物であり、Ａｌの組成比がｐ型クラッド層（１４）のＡｌの組成比以下である電流ブロック層（１６）と、電流ブロック層（１６）上に設けられ、レーザ発振波長に対して光を吸収する光吸収層（１７）とを備える。
PCT/JP2008/068873 2007-11-16 2008-10-17 半導体レーザ WO2009063720A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/734,665 US9099841B2 (en) 2007-11-16 2008-10-17 Semiconductor laser
CN2008801197490A CN101889374B (zh) 2007-11-16 2008-10-17 半导体激光器
US14/815,748 US20150340840A1 (en) 2007-11-16 2015-07-31 Semiconductor laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-298381 2007-11-16
JP2007298381A JP5385526B2 (ja) 2007-11-16 2007-11-16 半導体レーザ

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/734,665 A-371-Of-International US9099841B2 (en) 2007-11-16 2008-10-17 Semiconductor laser
US14/815,748 Continuation US20150340840A1 (en) 2007-11-16 2015-07-31 Semiconductor laser

Publications (1)

Publication Number Publication Date
WO2009063720A1 true WO2009063720A1 (ja) 2009-05-22

Family

ID=40638573

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068873 WO2009063720A1 (ja) 2007-11-16 2008-10-17 半導体レーザ

Country Status (6)

Country Link
US (2) US9099841B2 (ja)
JP (1) JP5385526B2 (ja)
KR (1) KR101579988B1 (ja)
CN (1) CN101889374B (ja)
TW (1) TW200943654A (ja)
WO (1) WO2009063720A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011075502A1 (de) * 2011-05-09 2012-11-15 Forschungsverbund Berlin E.V. Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013165275A (ja) * 2013-03-12 2013-08-22 Rohm Co Ltd 半導体レーザ素子
US9590389B2 (en) * 2014-10-31 2017-03-07 Nichia Corporation Semiconductor laser element
US11271369B2 (en) * 2018-04-04 2022-03-08 Mitsubishi Electric Corporation Semiconductor laser and method for manufacturing same
DE102019102499A1 (de) * 2019-01-31 2020-08-06 Forschungsverbund Berlin E.V. Vorrichtung zur Erzeugung von Laserstrahlung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283842A (ja) * 1996-04-16 1997-10-31 Toshiba Corp 半導体レーザ素子
JPH1098233A (ja) * 1996-09-25 1998-04-14 Rohm Co Ltd 半導体レーザおよびその製法
JP2005243945A (ja) * 2004-02-26 2005-09-08 Sony Corp 半導体発光装置
JP2006054426A (ja) * 2004-07-16 2006-02-23 Mitsubishi Chemicals Corp 自励発振型半導体レーザ装置

Family Cites Families (9)

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US5161167A (en) * 1990-06-21 1992-11-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser producing visible light
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
JPH07335981A (ja) 1994-06-07 1995-12-22 Mitsubishi Electric Corp 半導体発光素子，レーザアンプ，及び増幅機能を有する波長可変フィルタ
JP3778840B2 (ja) 1995-12-28 2006-05-24 三洋電機株式会社 半導体レーザ素子とその製造方法
CN1129218C (zh) * 1996-03-01 2003-11-26 松下电器产业株式会社 半导体激光器及劈开方法
JPH11233881A (ja) * 1998-02-17 1999-08-27 Sony Corp 自励発振型半導体レーザ
JP2000183457A (ja) * 1998-12-10 2000-06-30 Sony Corp 半導体レーザとその製造方法
JP2004165481A (ja) * 2002-11-14 2004-06-10 Sharp Corp 自励発振型半導体レーザ
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283842A (ja) * 1996-04-16 1997-10-31 Toshiba Corp 半導体レーザ素子
JPH1098233A (ja) * 1996-09-25 1998-04-14 Rohm Co Ltd 半導体レーザおよびその製法
JP2005243945A (ja) * 2004-02-26 2005-09-08 Sony Corp 半導体発光装置
JP2006054426A (ja) * 2004-07-16 2006-02-23 Mitsubishi Chemicals Corp 自励発振型半導体レーザ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011075502A1 (de) * 2011-05-09 2012-11-15 Forschungsverbund Berlin E.V. Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz
US8537869B2 (en) 2011-05-09 2013-09-17 Forschungsverbund Berlin E.V. Broad area diode laser with high efficiency and small far-field divergence

Also Published As

Publication number Publication date
KR101579988B1 (ko) 2015-12-23
KR20100094512A (ko) 2010-08-26
US20110128985A1 (en) 2011-06-02
CN101889374A (zh) 2010-11-17
JP2009124045A (ja) 2009-06-04
CN101889374B (zh) 2011-09-28
TW200943654A (en) 2009-10-16
JP5385526B2 (ja) 2014-01-08
US9099841B2 (en) 2015-08-04
US20150340840A1 (en) 2015-11-26

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