WO2008111477A1 - 窒化物半導体レーザ - Google Patents

窒化物半導体レーザ Download PDF

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Publication number
WO2008111477A1
WO2008111477A1 PCT/JP2008/054030 JP2008054030W WO2008111477A1 WO 2008111477 A1 WO2008111477 A1 WO 2008111477A1 JP 2008054030 W JP2008054030 W JP 2008054030W WO 2008111477 A1 WO2008111477 A1 WO 2008111477A1
Authority
WO
WIPO (PCT)
Prior art keywords
nitride semiconductor
semiconductor laser
cod level
perot
fabry
Prior art date
Application number
PCT/JP2008/054030
Other languages
English (en)
French (fr)
Inventor
Kazuhisa Fukuda
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009504004A priority Critical patent/JP5233987B2/ja
Publication of WO2008111477A1 publication Critical patent/WO2008111477A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　本発明は、信頼性の高い高出力動作可能な、ファブリ・ペロー型III族窒化物系半導体レーザを提供する。本発明では、ファブリ・ペロー型III族窒化物系半導体レーザにおいて、その光出射端面近傍の活性層内部において、レーザ光を吸収しない領域を共振器のストライプ方向に沿って幅ｗ（ｎｍ）に亘って形成し、局所窓構造として利用することで、高い初期ＣＯＤレベルを実現し、また、高出力動作を継続した際、ＣＯＤレベルの経時的な劣化を抑制する。
PCT/JP2008/054030 2007-03-09 2008-03-06 窒化物半導体レーザ WO2008111477A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009504004A JP5233987B2 (ja) 2007-03-09 2008-03-06 窒化物半導体レーザ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007060408 2007-03-09
JP2007-060408 2007-03-09

Publications (1)

Publication Number Publication Date
WO2008111477A1 true WO2008111477A1 (ja) 2008-09-18

Family

ID=39759419

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054030 WO2008111477A1 (ja) 2007-03-09 2008-03-06 窒化物半導体レーザ

Country Status (2)

Country Link
JP (1) JP5233987B2 (ja)
WO (1) WO2008111477A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012156487A (ja) * 2011-11-08 2012-08-16 Mitsubishi Electric Corp 半導体ウェハ
US8779435B2 (en) 2011-01-25 2014-07-15 Mitsubishi Electric Corporation Semiconductor device structure and method of manufacturing semiconductor device structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6439088A (en) * 1986-12-25 1989-02-09 Mitsubishi Electric Corp Semiconductor laser device
JPH04144294A (ja) * 1990-10-05 1992-05-18 Seiko Epson Corp 半導体レーザ
JPH11238940A (ja) * 1997-12-18 1999-08-31 Nec Corp 半導体レーザの製造方法および該方法による半導体レーザ
JP2006108225A (ja) * 2004-10-01 2006-04-20 Mitsubishi Electric Corp 半導体レーザ
JP2006229210A (ja) * 2005-01-24 2006-08-31 Matsushita Electric Ind Co Ltd 窒化物半導体レーザ素子及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4249920B2 (ja) * 2001-10-15 2009-04-08 シャープ株式会社 端面窓型半導体レーザ装置およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6439088A (en) * 1986-12-25 1989-02-09 Mitsubishi Electric Corp Semiconductor laser device
JPH04144294A (ja) * 1990-10-05 1992-05-18 Seiko Epson Corp 半導体レーザ
JPH11238940A (ja) * 1997-12-18 1999-08-31 Nec Corp 半導体レーザの製造方法および該方法による半導体レーザ
JP2006108225A (ja) * 2004-10-01 2006-04-20 Mitsubishi Electric Corp 半導体レーザ
JP2006229210A (ja) * 2005-01-24 2006-08-31 Matsushita Electric Ind Co Ltd 窒化物半導体レーザ素子及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8779435B2 (en) 2011-01-25 2014-07-15 Mitsubishi Electric Corporation Semiconductor device structure and method of manufacturing semiconductor device structure
JP2012156487A (ja) * 2011-11-08 2012-08-16 Mitsubishi Electric Corp 半導体ウェハ

Also Published As

Publication number Publication date
JP5233987B2 (ja) 2013-07-10
JPWO2008111477A1 (ja) 2010-06-24

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