WO2009016906A1 - 弾性波装置及びその製造方法 - Google Patents

弾性波装置及びその製造方法 Download PDF

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Publication number
WO2009016906A1
WO2009016906A1 PCT/JP2008/061837 JP2008061837W WO2009016906A1 WO 2009016906 A1 WO2009016906 A1 WO 2009016906A1 JP 2008061837 W JP2008061837 W JP 2008061837W WO 2009016906 A1 WO2009016906 A1 WO 2009016906A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductive film
wiring pattern
wave device
elastic wave
multilayer conductive
Prior art date
Application number
PCT/JP2008/061837
Other languages
English (en)
French (fr)
Inventor
Nobuhira Tanaka
Hisashi Yamazaki
Original Assignee
Murata Manufacturing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co., Ltd. filed Critical Murata Manufacturing Co., Ltd.
Priority to EP08790750.7A priority Critical patent/EP2175556B1/en
Priority to CN200880100519XA priority patent/CN101765971B/zh
Priority to JP2009525311A priority patent/JP4973732B2/ja
Publication of WO2009016906A1 publication Critical patent/WO2009016906A1/ja
Priority to US12/696,080 priority patent/US7868523B2/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/058—Holders; Supports for surface acoustic wave devices
    • H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/0222—Details of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02897—Means for compensation or elimination of undesirable effects of strain or mechanical damage, e.g. strain due to bending influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02929—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H03H9/14541—Multilayer finger or busbar electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

　バンプを用いたフリップチップボンディングに際し、圧電基板にクラックが生じ難いだけでなく、配線パターン同士の電気的接続部であるコンタクト部の接触抵抗が低く、挿入損失を改善することができる弾性波装置を提供する。 　圧電基板２上に第１，第２の積層導電膜が形成されており、第１の積層導電膜３３により、ＩＤＴ電極及び第１の配線パターン１６が形成されており、第２の積層導電膜３１により、バンプ３２が接続される電極パッド９及び第２の配線パターン１７が形成されており、第２の配線パターン１７が第１の配線パターン１６上に重なり合って両者が電気的に接続される少なくとも１つのコンタクト部Ｂが形成されており、第１の積層導電膜３３の最上層導電膜がＴｉ膜３３ａからなり、第２の積層導電膜３１の最下層導電膜がＡｌまたはＡｌを主体とする合金からなるＡｌ系導電膜３１ｃである、弾性波装置１。
PCT/JP2008/061837 2007-07-30 2008-06-30 弾性波装置及びその製造方法 WO2009016906A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08790750.7A EP2175556B1 (en) 2007-07-30 2008-06-30 Elastic wave device and method for manufacturing the same
CN200880100519XA CN101765971B (zh) 2007-07-30 2008-06-30 弹性波装置及其制造方法
JP2009525311A JP4973732B2 (ja) 2007-07-30 2008-06-30 弾性波装置
US12/696,080 US7868523B2 (en) 2007-07-30 2010-01-29 Elastic wave device and method of producing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007197335 2007-07-30
JP2007-197335 2007-07-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/696,080 Continuation US7868523B2 (en) 2007-07-30 2010-01-29 Elastic wave device and method of producing the same

Publications (1)

Publication Number Publication Date
WO2009016906A1 true WO2009016906A1 (ja) 2009-02-05

Family

ID=40304142

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061837 WO2009016906A1 (ja) 2007-07-30 2008-06-30 弾性波装置及びその製造方法

Country Status (5)

Country Link
US (1) US7868523B2 (ja)
EP (2) EP2175556B1 (ja)
JP (1) JP4973732B2 (ja)
CN (1) CN101765971B (ja)
WO (1) WO2009016906A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010081086A (ja) * 2008-09-24 2010-04-08 Murata Mfg Co Ltd 弾性波装置及びその製造方法
JP2011172191A (ja) * 2010-02-22 2011-09-01 Kyocera Corp 弾性表面波装置
JP2012065092A (ja) * 2010-09-15 2012-03-29 Murata Mfg Co Ltd 電子部品及びその製造方法
JP2017135652A (ja) * 2016-01-29 2017-08-03 京セラ株式会社 弾性表面波装置
US9728705B2 (en) 2009-12-02 2017-08-08 Qualcomm Incorporated Metallization having high power compatibility and high electrical conductivity
WO2018030170A1 (ja) * 2016-08-10 2018-02-15 株式会社村田製作所 弾性波装置及びラダー型フィルタ
JP2018101955A (ja) * 2016-12-21 2018-06-28 太陽誘電株式会社 弾性波デバイス
US10084428B2 (en) 2013-05-14 2018-09-25 Murata Manufacturing Co., Ltd. Elastic wave device and method for manufacturing the same

Families Citing this family (21)

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Publication number Priority date Publication date Assignee Title
DE102005034873B4 (de) * 2005-07-26 2013-03-07 Siemens Aktiengesellschaft Anordnung eines elektrischen Bauelements und eines auf dem Bauelement auflaminierten Folienverbunds und Verfahren zur Herstellung der Anordnung
WO2008108215A1 (ja) * 2007-03-06 2008-09-12 Murata Manufacturing Co., Ltd. 弾性境界波装置
US8237329B2 (en) * 2009-01-07 2012-08-07 Nihon Dempa Kogyo Co., Ltd. Elastic wave device and electronic component
JPWO2010116783A1 (ja) * 2009-03-30 2012-10-18 株式会社村田製作所 弾性波装置
JP2011135469A (ja) * 2009-12-25 2011-07-07 Murata Mfg Co Ltd 弾性波装置
WO2012063521A1 (ja) 2010-11-10 2012-05-18 株式会社村田製作所 弾性波装置及びその製造方法
JP5880520B2 (ja) * 2013-10-30 2016-03-09 株式会社村田製作所 弾性波装置及びその製造方法
CN106031031B (zh) 2014-02-18 2019-03-08 天工滤波方案日本有限公司 声波元件和使用声波元件的梯型滤波器
JP6385690B2 (ja) * 2014-03-05 2018-09-05 太陽誘電株式会社 弾性波デバイス及びその製造方法
JP6211955B2 (ja) * 2014-03-07 2017-10-11 東芝メモリ株式会社 半導体製造装置及び半導体製造方法
CN107078713B (zh) * 2014-09-30 2021-10-26 株式会社村田制作所 梯型滤波器
JP6493524B2 (ja) * 2015-05-18 2019-04-03 株式会社村田製作所 弾性表面波装置、高周波モジュール及び弾性表面波装置の製造方法
WO2019004205A1 (ja) * 2017-06-30 2019-01-03 株式会社村田製作所 弾性波装置
KR102432301B1 (ko) * 2017-12-27 2022-08-11 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치
DE102018109849B4 (de) 2018-04-24 2020-03-05 RF360 Europe GmbH Elektroakustischer Resonator und Verfahren zum Bilden desselben
US11469733B2 (en) 2020-05-06 2022-10-11 Resonant Inc. Transversely-excited film bulk acoustic resonators with interdigital transducer configured to reduce diaphragm stress
US11605721B2 (en) * 2020-08-30 2023-03-14 Kaixuan Shi Sputtering electrode with multiple metallic-layer structure for semiconductor device and method for producing same
US11658639B2 (en) 2020-10-05 2023-05-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator matrix filters with noncontiguous passband
US11476834B2 (en) 2020-10-05 2022-10-18 Resonant Inc. Transversely-excited film bulk acoustic resonator matrix filters with switches in parallel with sub-filter shunt capacitors
US11728784B2 (en) 2020-10-05 2023-08-15 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator matrix filters with split die sub-filters
CN113746449B (zh) * 2021-11-05 2022-11-04 成都频岢微电子有限公司 一种弹性波宽带滤波器

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04294625A (ja) * 1991-03-25 1992-10-19 Seiko Epson Corp 弾性表面波素子
JP2002261560A (ja) * 2000-12-26 2002-09-13 Murata Mfg Co Ltd 弾性表面波装置の製造方法及び弾性表面波装置
JP2002531980A (ja) * 1998-12-02 2002-09-24 シーティーエス・コーポレーション 表面弾性波装置の高いパワー取扱いのための金属被覆および金属被覆を提供する方法
JP2003174056A (ja) 2001-12-07 2003-06-20 Murata Mfg Co Ltd 電子部品素子及びその製造方法並びに電子部品装置
JP2005197595A (ja) * 2004-01-09 2005-07-21 Murata Mfg Co Ltd 電子部品素子、電子部品、及び通信機
JP2006115548A (ja) 2003-06-17 2006-04-27 Murata Mfg Co Ltd 弾性表面波装置
WO2006058579A1 (de) * 2004-12-01 2006-06-08 Epcos Ag Mit akustischen oberflächenwellen arbeitendes bauelement mit hoher bandbreite

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3379049B2 (ja) * 1993-10-27 2003-02-17 富士通株式会社 表面弾性波素子とその製造方法
JP3405329B2 (ja) 2000-07-19 2003-05-12 株式会社村田製作所 表面波装置
JP3414371B2 (ja) 2000-07-31 2003-06-09 株式会社村田製作所 弾性表面波装置及びその製造方法
JP3945363B2 (ja) 2001-10-12 2007-07-18 株式会社村田製作所 弾性表面波装置
WO2003058813A1 (fr) * 2001-12-28 2003-07-17 Matsushita Electric Industrial Co., Ltd. Dispositif de traitement des ondes acoustiques de surface, composant electronique utilisant ce dispositif et module composite
US20040256949A1 (en) 2003-06-17 2004-12-23 Takuo Hada Surface acoustic wave device
JP4686472B2 (ja) * 2004-10-26 2011-05-25 京セラ株式会社 弾性表面波素子及び通信装置
JP4682657B2 (ja) * 2005-03-22 2011-05-11 パナソニック株式会社 弾性表面波デバイス
JP4717889B2 (ja) * 2005-10-27 2011-07-06 京セラ株式会社 分波器とそれを用いた通信装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04294625A (ja) * 1991-03-25 1992-10-19 Seiko Epson Corp 弾性表面波素子
JP2002531980A (ja) * 1998-12-02 2002-09-24 シーティーエス・コーポレーション 表面弾性波装置の高いパワー取扱いのための金属被覆および金属被覆を提供する方法
JP2002261560A (ja) * 2000-12-26 2002-09-13 Murata Mfg Co Ltd 弾性表面波装置の製造方法及び弾性表面波装置
JP2003174056A (ja) 2001-12-07 2003-06-20 Murata Mfg Co Ltd 電子部品素子及びその製造方法並びに電子部品装置
JP2006115548A (ja) 2003-06-17 2006-04-27 Murata Mfg Co Ltd 弾性表面波装置
JP2005197595A (ja) * 2004-01-09 2005-07-21 Murata Mfg Co Ltd 電子部品素子、電子部品、及び通信機
WO2006058579A1 (de) * 2004-12-01 2006-06-08 Epcos Ag Mit akustischen oberflächenwellen arbeitendes bauelement mit hoher bandbreite

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2175556A4

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010081086A (ja) * 2008-09-24 2010-04-08 Murata Mfg Co Ltd 弾性波装置及びその製造方法
US9728705B2 (en) 2009-12-02 2017-08-08 Qualcomm Incorporated Metallization having high power compatibility and high electrical conductivity
DE102009056663B4 (de) 2009-12-02 2022-08-11 Tdk Electronics Ag Metallisierung mit hoher Leistungsverträglichkeit und hoher elektrischer Leitfähigkeit und Verfahren zur Herstellung
JP2011172191A (ja) * 2010-02-22 2011-09-01 Kyocera Corp 弾性表面波装置
JP2012065092A (ja) * 2010-09-15 2012-03-29 Murata Mfg Co Ltd 電子部品及びその製造方法
US10084428B2 (en) 2013-05-14 2018-09-25 Murata Manufacturing Co., Ltd. Elastic wave device and method for manufacturing the same
JP2017135652A (ja) * 2016-01-29 2017-08-03 京セラ株式会社 弾性表面波装置
WO2018030170A1 (ja) * 2016-08-10 2018-02-15 株式会社村田製作所 弾性波装置及びラダー型フィルタ
JPWO2018030170A1 (ja) * 2016-08-10 2019-03-28 株式会社村田製作所 弾性波装置及びラダー型フィルタ
US10862458B2 (en) 2016-08-10 2020-12-08 Murata Manufacturing Co., Ltd. Acoustic wave device and ladder filter
JP2018101955A (ja) * 2016-12-21 2018-06-28 太陽誘電株式会社 弾性波デバイス

Also Published As

Publication number Publication date
CN101765971B (zh) 2013-05-29
US20100117483A1 (en) 2010-05-13
JP4973732B2 (ja) 2012-07-11
EP2728750A1 (en) 2014-05-07
EP2175556A1 (en) 2010-04-14
EP2175556A4 (en) 2013-08-07
EP2175556B1 (en) 2014-09-03
US7868523B2 (en) 2011-01-11
JPWO2009016906A1 (ja) 2010-10-14
CN101765971A (zh) 2010-06-30

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