WO2009016739A1 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- WO2009016739A1 WO2009016739A1 PCT/JP2007/064998 JP2007064998W WO2009016739A1 WO 2009016739 A1 WO2009016739 A1 WO 2009016739A1 JP 2007064998 W JP2007064998 W JP 2007064998W WO 2009016739 A1 WO2009016739 A1 WO 2009016739A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- insulation film
- gate sidewall
- sidewall insulation
- voltage operation
- transistor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 11
- 125000006850 spacer group Chemical group 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/064998 WO2009016739A1 (ja) | 2007-07-31 | 2007-07-31 | 半導体装置及びその製造方法 |
JP2009525231A JP5278320B2 (ja) | 2007-07-31 | 2007-07-31 | 半導体装置及びその製造方法 |
KR1020097024631A KR101191818B1 (ko) | 2007-07-31 | 2007-07-31 | 반도체 장치 및 그 제조 방법 |
US12/599,431 US8907430B2 (en) | 2007-07-31 | 2009-11-09 | Semiconductor device and manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/064998 WO2009016739A1 (ja) | 2007-07-31 | 2007-07-31 | 半導体装置及びその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12599431 Continuation | 2009-11-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009016739A1 true WO2009016739A1 (ja) | 2009-02-05 |
Family
ID=40303984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/064998 WO2009016739A1 (ja) | 2007-07-31 | 2007-07-31 | 半導体装置及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8907430B2 (ja) |
JP (1) | JP5278320B2 (ja) |
KR (1) | KR101191818B1 (ja) |
WO (1) | WO2009016739A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9153960B2 (en) | 2004-01-15 | 2015-10-06 | Comarco Wireless Technologies, Inc. | Power supply equipment utilizing interchangeable tips to provide power and a data signal to electronic devices |
US8767482B2 (en) * | 2011-08-18 | 2014-07-01 | Micron Technology, Inc. | Apparatuses, devices and methods for sensing a snapback event in a circuit |
CN103187368B (zh) * | 2011-12-31 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | 嵌入式闪存中晶体管的形成方法 |
US20140210012A1 (en) * | 2013-01-31 | 2014-07-31 | Spansion Llc | Manufacturing of FET Devices Having Lightly Doped Drain and Source Regions |
KR102008738B1 (ko) * | 2013-03-15 | 2019-08-08 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
CN106129009A (zh) * | 2016-08-30 | 2016-11-16 | 上海华力微电子有限公司 | 利用侧墙结构提高存储区可靠性的方法以及闪存存储器 |
JP6790808B2 (ja) | 2016-12-26 | 2020-11-25 | 株式会社デンソー | 半導体装置およびその製造方法 |
US10242996B2 (en) * | 2017-07-19 | 2019-03-26 | Cypress Semiconductor Corporation | Method of forming high-voltage transistor with thin gate poly |
TWI685085B (zh) * | 2019-02-26 | 2020-02-11 | 華邦電子股份有限公司 | 記憶元件及其製造方法 |
TWI704648B (zh) * | 2019-11-20 | 2020-09-11 | 華邦電子股份有限公司 | 記憶體裝置的製造方法 |
CN113097138B (zh) * | 2021-03-27 | 2023-04-18 | 长江存储科技有限责任公司 | 半导体器件及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001093984A (ja) * | 1999-09-20 | 2001-04-06 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
JP2003124338A (ja) * | 2001-10-09 | 2003-04-25 | Sharp Corp | 半導体装置及びその製造方法 |
WO2005041307A1 (ja) * | 2003-10-23 | 2005-05-06 | Fujitsu Limited | 半導体装置と半導体装置の製造方法 |
JP2006286675A (ja) * | 2005-03-31 | 2006-10-19 | Fujitsu Ltd | 不揮発性半導体記憶装置とその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6555865B2 (en) * | 2001-07-10 | 2003-04-29 | Samsung Electronics Co. Ltd. | Nonvolatile semiconductor memory device with a multi-layer sidewall spacer structure and method for manufacturing the same |
JP4477886B2 (ja) | 2003-04-28 | 2010-06-09 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
TWI228834B (en) * | 2003-05-14 | 2005-03-01 | Macronix Int Co Ltd | Method of forming a non-volatile memory device |
KR20060029376A (ko) * | 2004-10-01 | 2006-04-06 | 주식회사 하이닉스반도체 | 비휘발성 메모리소자의 제조방법 |
US7544575B2 (en) * | 2006-01-19 | 2009-06-09 | Freescale Semiconductor, Inc. | Dual metal silicide scheme using a dual spacer process |
US20080028521A1 (en) * | 2006-07-17 | 2008-02-07 | Sunil Mehta | Formation of high voltage transistor with high breakdown voltage |
-
2007
- 2007-07-31 JP JP2009525231A patent/JP5278320B2/ja not_active Expired - Fee Related
- 2007-07-31 WO PCT/JP2007/064998 patent/WO2009016739A1/ja active Application Filing
- 2007-07-31 KR KR1020097024631A patent/KR101191818B1/ko active IP Right Grant
-
2009
- 2009-11-09 US US12/599,431 patent/US8907430B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001093984A (ja) * | 1999-09-20 | 2001-04-06 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
JP2003124338A (ja) * | 2001-10-09 | 2003-04-25 | Sharp Corp | 半導体装置及びその製造方法 |
WO2005041307A1 (ja) * | 2003-10-23 | 2005-05-06 | Fujitsu Limited | 半導体装置と半導体装置の製造方法 |
JP2006286675A (ja) * | 2005-03-31 | 2006-10-19 | Fujitsu Ltd | 不揮発性半導体記憶装置とその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20100008784A (ko) | 2010-01-26 |
KR101191818B1 (ko) | 2012-10-16 |
US8907430B2 (en) | 2014-12-09 |
JPWO2009016739A1 (ja) | 2010-10-07 |
JP5278320B2 (ja) | 2013-09-04 |
US20100308420A1 (en) | 2010-12-09 |
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