WO2009005017A1 - Boîtier semi-conducteur et procédé de fabrication correspondant - Google Patents

Boîtier semi-conducteur et procédé de fabrication correspondant Download PDF

Info

Publication number
WO2009005017A1
WO2009005017A1 PCT/JP2008/061773 JP2008061773W WO2009005017A1 WO 2009005017 A1 WO2009005017 A1 WO 2009005017A1 JP 2008061773 W JP2008061773 W JP 2008061773W WO 2009005017 A1 WO2009005017 A1 WO 2009005017A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
semiconductor package
substrate
manufacturing
same
Prior art date
Application number
PCT/JP2008/061773
Other languages
English (en)
Japanese (ja)
Inventor
Yuki Suto
Original Assignee
Fujikura Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd. filed Critical Fujikura Ltd.
Priority to CN200880022659A priority Critical patent/CN101689533A/zh
Priority to EP08790715A priority patent/EP2164098A4/fr
Publication of WO2009005017A1 publication Critical patent/WO2009005017A1/fr
Priority to US12/648,172 priority patent/US8330268B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0106—Neodymium [Nd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01073—Tantalum [Ta]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

La présente invention concerne un boîtier semi-conducteur fourni avec un dispositif semi-conducteur ; un substrat semi-conducteur sur lequel le dispositif semi-conducteur est arrangé sur une surface ; un substrat capuchon ayant une surface qui fait face à la surface du substrat semi-conducteur à travers un espace ; un écarteur qui est placé entre la surface du substrat semi-conducteur et la surface du substrat capuchon et qui joint le premier substrat au second ; et un filtre placé sur le substrat capuchon de façon à ne pas dépasser l'écarteur mais à dépasser le dispositif semi-conducteur. Ainsi, l'invention permet de supprimer le problème d'un boîtier semi-conducteur dans lequel, lors d'une étape de découpe, il se produit un pelage de filtre dû à un écaillage. Un procédé de fabrication d'un tel boîtier semiconducteur est aussi proposé.
PCT/JP2008/061773 2007-06-29 2008-06-27 Boîtier semi-conducteur et procédé de fabrication correspondant WO2009005017A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880022659A CN101689533A (zh) 2007-06-29 2008-06-27 半导体封装组件及其制造方法
EP08790715A EP2164098A4 (fr) 2007-06-29 2008-06-27 Boîtier semi-conducteur et procédé de fabrication correspondant
US12/648,172 US8330268B2 (en) 2007-06-29 2009-12-28 Semiconductor package and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007171915A JP2009010261A (ja) 2007-06-29 2007-06-29 半導体パッケージおよびその製造方法
JP2007-171915 2007-06-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/648,172 Continuation US8330268B2 (en) 2007-06-29 2009-12-28 Semiconductor package and manufacturing method thereof

Publications (1)

Publication Number Publication Date
WO2009005017A1 true WO2009005017A1 (fr) 2009-01-08

Family

ID=40226063

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061773 WO2009005017A1 (fr) 2007-06-29 2008-06-27 Boîtier semi-conducteur et procédé de fabrication correspondant

Country Status (7)

Country Link
US (1) US8330268B2 (fr)
EP (1) EP2164098A4 (fr)
JP (1) JP2009010261A (fr)
KR (1) KR20100025538A (fr)
CN (1) CN101689533A (fr)
TW (1) TW200913239A (fr)
WO (1) WO2009005017A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010095201A1 (fr) * 2009-02-20 2010-08-26 パナソニック株式会社 Dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur
WO2011035783A1 (fr) * 2009-09-24 2011-03-31 Msg Lithoglas Ag Procédé de réalisation d'un agencement comprenant un composant appliqué sur un substrat support et agencement ainsi que procédé de réalisation d'un produit semi-fini et produit semi-fini
WO2014045633A1 (fr) * 2012-09-24 2014-03-27 オリンパス株式会社 Dispositif d'imagerie et endoscope équipé du dispositif d'imagerie
JP2015529394A (ja) * 2012-08-23 2015-10-05 レイセオン カンパニー ウエハーレベルパッケージングされる赤外線フォーカルプレーンアレイの反射防止コーティングされるキャップウエハーにおける応力緩和方法
US11174705B2 (en) 2019-04-30 2021-11-16 Weatherford Technology Holdings, Llc Tubing tester valve and associated methods

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0914350D0 (en) * 2009-08-17 2009-09-30 St Microelectronics Res & Dev Improvements in or relating to filters in an image sensor
WO2011156926A1 (fr) * 2010-06-14 2011-12-22 Heptagon Oy Procédé de fabrication d'une pluralité de dispositifs optiques
US9075182B2 (en) * 2011-06-03 2015-07-07 VisEra Technology Company Limited Camera module and spacer of a lens structure in the camera module
KR101980634B1 (ko) * 2011-06-30 2019-05-22 엘지이노텍 주식회사 렌즈 유닛, 및 이를 포함하는 카메라 모듈
KR101980657B1 (ko) * 2011-06-30 2019-05-22 엘지이노텍 주식회사 렌즈 어셈블리의 제조방법
JP5903796B2 (ja) * 2011-08-12 2016-04-13 ソニー株式会社 撮像装置およびカメラモジュール
TWI462266B (zh) * 2012-03-20 2014-11-21 Chipmos Technologies Inc 晶片堆疊結構及其製造方法
JP6185813B2 (ja) * 2013-09-30 2017-08-23 三星ダイヤモンド工業株式会社 イメージセンサ用ウエハ積層体の分断方法並びに分断装置
JP6255517B2 (ja) * 2014-12-24 2017-12-27 株式会社フジクラ 圧力センサおよび圧力センサモジュール
JP6054501B1 (ja) * 2015-12-17 2016-12-27 株式会社フジクラ 終端装置および終端方法
WO2020230404A1 (fr) * 2019-05-15 2020-11-19 ソニーセミコンダクタソリューションズ株式会社 Boîtier de semi-conducteur, procédé de fabrication de boîtier de semi-conducteur et dispositif électronique

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002373977A (ja) * 2001-06-14 2002-12-26 Canon Inc 固体撮像装置
JP2005125447A (ja) * 2003-10-23 2005-05-19 Hitachi Ltd 電子部品およびその製造方法
JP2005136144A (ja) * 2003-10-30 2005-05-26 Kyocera Corp 固体撮像装置
JP2005212017A (ja) * 2004-01-28 2005-08-11 Kyocera Corp 電子部品封止用基板および多数個取り用電子部品封止用基板ならびに電子装置の製造方法
JP2007042741A (ja) * 2005-08-01 2007-02-15 Shinko Electric Ind Co Ltd 電子部品実装構造体及びその製造方法
JP2007171915A (ja) 2005-11-22 2007-07-05 Ricoh Co Ltd 画像形成装置及び画像形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7276798B2 (en) * 2002-05-23 2007-10-02 Honeywell International Inc. Integral topside vacuum package
JP2005101911A (ja) * 2003-09-25 2005-04-14 Konica Minolta Opto Inc 撮像装置及び携帯端末
US7303645B2 (en) * 2003-10-24 2007-12-04 Miradia Inc. Method and system for hermetically sealing packages for optics
US8049806B2 (en) * 2004-09-27 2011-11-01 Digitaloptics Corporation East Thin camera and associated methods
US7511262B2 (en) * 2004-08-30 2009-03-31 Micron Technology, Inc. Optical device and assembly for use with imaging dies, and wafer-label imager assembly
JP4381274B2 (ja) 2004-10-04 2009-12-09 シャープ株式会社 半導体装置およびその製造方法
JP2006173557A (ja) * 2004-11-22 2006-06-29 Toshiba Corp 中空型半導体装置とその製造方法
JPWO2006109638A1 (ja) * 2005-04-08 2008-11-06 コニカミノルタオプト株式会社 固体撮像素子及びその製造方法
JP2007129164A (ja) * 2005-11-07 2007-05-24 Sharp Corp 光学装置用モジュール、光学装置用モジュールの製造方法、及び、構造体

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002373977A (ja) * 2001-06-14 2002-12-26 Canon Inc 固体撮像装置
JP2005125447A (ja) * 2003-10-23 2005-05-19 Hitachi Ltd 電子部品およびその製造方法
JP2005136144A (ja) * 2003-10-30 2005-05-26 Kyocera Corp 固体撮像装置
JP2005212017A (ja) * 2004-01-28 2005-08-11 Kyocera Corp 電子部品封止用基板および多数個取り用電子部品封止用基板ならびに電子装置の製造方法
JP2007042741A (ja) * 2005-08-01 2007-02-15 Shinko Electric Ind Co Ltd 電子部品実装構造体及びその製造方法
JP2007171915A (ja) 2005-11-22 2007-07-05 Ricoh Co Ltd 画像形成装置及び画像形成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2164098A4

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010095201A1 (fr) * 2009-02-20 2010-08-26 パナソニック株式会社 Dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur
WO2011035783A1 (fr) * 2009-09-24 2011-03-31 Msg Lithoglas Ag Procédé de réalisation d'un agencement comprenant un composant appliqué sur un substrat support et agencement ainsi que procédé de réalisation d'un produit semi-fini et produit semi-fini
CN102598288A (zh) * 2009-09-24 2012-07-18 Msg里松格莱斯股份公司 用于制造带有承载衬底上的结构元件的布置的方法和布置以及用于制造半成品的方法和半成品
EP3297036A1 (fr) * 2009-09-24 2018-03-21 MSG Lithoglas GmbH Procédé de fabrication d'un dispositif pourvu d'un élément de construction sur un substrat de support et dispositif ainsi que procédé de fabrication d'un produit semi-fini
JP2015529394A (ja) * 2012-08-23 2015-10-05 レイセオン カンパニー ウエハーレベルパッケージングされる赤外線フォーカルプレーンアレイの反射防止コーティングされるキャップウエハーにおける応力緩和方法
US9427776B2 (en) 2012-08-23 2016-08-30 Raytheon Company Method of stress relief in anti-reflective coated cap wafers for wafer level packaged infrared focal plane arrays
US10315918B2 (en) 2012-08-23 2019-06-11 Raytheon Company Method of stress relief in anti-reflective coated cap wafers for wafer level packaged infrared focal plane arrays
WO2014045633A1 (fr) * 2012-09-24 2014-03-27 オリンパス株式会社 Dispositif d'imagerie et endoscope équipé du dispositif d'imagerie
US9820637B2 (en) 2012-09-24 2017-11-21 Olympus Corporation Image pickup apparatus and endoscope including image pickup apparatus
US11174705B2 (en) 2019-04-30 2021-11-16 Weatherford Technology Holdings, Llc Tubing tester valve and associated methods

Also Published As

Publication number Publication date
KR20100025538A (ko) 2010-03-09
US20100102437A1 (en) 2010-04-29
CN101689533A (zh) 2010-03-31
JP2009010261A (ja) 2009-01-15
EP2164098A1 (fr) 2010-03-17
EP2164098A4 (fr) 2013-03-13
US8330268B2 (en) 2012-12-11
TW200913239A (en) 2009-03-16

Similar Documents

Publication Publication Date Title
WO2009005017A1 (fr) Boîtier semi-conducteur et procédé de fabrication correspondant
WO2009142391A3 (fr) Boîtier de composant luminescent et son procédé de fabrication
WO2009113831A3 (fr) Ruban adhésif multifonctionnel pour emballage de semiconducteur et procédé de fabrication de dispositif semiconducteur au moyen de ce ruban
WO2009086289A3 (fr) Boîtier de pile solaire pour concentrateur solaire
WO2012057517A3 (fr) Dispositif à semi-conducteur composite et procédé de fabrication d'un semi-conducteur composite
WO2008152945A1 (fr) Dispositif semiconducteur émetteur de lumière et procédé de fabrication correspondant
WO2009102617A3 (fr) Dispositif comportant une couche noire de génération d'énergie et son procédé de fabrication
WO2009128678A3 (fr) Cellule solaire et son procédé de fabrication
CA2889975C (fr) Elements d'espacement de ligne de liaison integres pour dispositifs de circuits enrobes du niveau d'une tranche
WO2010012548A3 (fr) Encapsulation, microsystème électromécanique, ainsi que procédé d'encapsulation sélective
WO2008011276A3 (fr) Module de microphone et son procédé de fabrication
WO2008156337A3 (fr) Cellule solaire, procédé de fabrication de celle-ci et appareil pour la fabrication de celle-ci
WO2007055924A3 (fr) Procede de boitier sur tranche
WO2010011842A3 (fr) Substrat intermédiaire lié et son procédé de fabrication
WO2007130471A3 (fr) Systèmes et procédés pour modules multicomposants à haute densité
TW200701335A (en) Nitride semiconductor device and manufacturing mathod thereof
WO2009057983A3 (fr) Boîtier de dispositif électroluminescent et son procédé de fabrication
WO2010044642A3 (fr) Dispositif électroluminescent à semiconducteurs et son procédé de fabrication
WO2009060693A1 (fr) Dispositif et procédé de fabrication du dispositif
WO2008105360A1 (fr) Procédé de fabrication d'un dispositif semi-conducteur et appareil de fabrication d'un dispositif semi-conducteur
WO2010039208A3 (fr) Structures d’anneau de garde et leur procédé de préfabrication
WO2007124209A3 (fr) Intégration d'élément de contrainte et procédé associé
EP2514858A4 (fr) Substrat en cristal de nitrure du groupe iii, substrat en cristal de nitrure du groupe iii possédant une couche épitaxiale, dispositif semi-conducteur et son procédé de fabrication
WO2011043610A3 (fr) Appareil de génération d'énergie photovoltaïque et procédé pour sa fabrication
TW200725818A (en) Wafer-level chip package process

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880022659.X

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08790715

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20097027099

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008790715

Country of ref document: EP