WO2008155832A1 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
WO2008155832A1
WO2008155832A1 PCT/JP2007/062398 JP2007062398W WO2008155832A1 WO 2008155832 A1 WO2008155832 A1 WO 2008155832A1 JP 2007062398 W JP2007062398 W JP 2007062398W WO 2008155832 A1 WO2008155832 A1 WO 2008155832A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulating film
over
forming
storage elements
semiconductor device
Prior art date
Application number
PCT/JP2007/062398
Other languages
English (en)
French (fr)
Inventor
Taiji Ema
Original Assignee
Fujitsu Microelectronics Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Microelectronics Limited filed Critical Fujitsu Microelectronics Limited
Priority to PCT/JP2007/062398 priority Critical patent/WO2008155832A1/ja
Priority to TW096122478A priority patent/TW200901442A/zh
Publication of WO2008155832A1 publication Critical patent/WO2008155832A1/ja

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

　半導体基板１０上に第１の配線２８ａを形成する第１の工程と、第１の配線上に記憶素子３０を形成する第２の工程と、半導体基板上に、記憶素子を埋め込むように第１の絶縁膜４２を形成する第３の工程と、第１の絶縁膜上及び記憶素子上に、第１の絶縁膜とエッチング特性が異なる第２の絶縁膜４４を形成する第４の工程と、第１の絶縁膜をエッチングストッパとして、第２の絶縁膜をエッチングすることにより、記憶素子の上部を露出する溝４６を第２の絶縁膜に形成する第５の工程と、溝内に第２の配線３２ａを埋め込む第６の工程とを有している。
PCT/JP2007/062398 2007-06-20 2007-06-20 半導体装置及びその製造方法 WO2008155832A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2007/062398 WO2008155832A1 (ja) 2007-06-20 2007-06-20 半導体装置及びその製造方法
TW096122478A TW200901442A (en) 2007-06-20 2007-06-22 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/062398 WO2008155832A1 (ja) 2007-06-20 2007-06-20 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
WO2008155832A1 true WO2008155832A1 (ja) 2008-12-24

Family

ID=40155998

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/062398 WO2008155832A1 (ja) 2007-06-20 2007-06-20 半導体装置及びその製造方法

Country Status (2)

Country Link
TW (1) TW200901442A (ja)
WO (1) WO2008155832A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009123900A (ja) * 2007-11-14 2009-06-04 Toshiba Corp 不揮発性半導体記憶装置
WO2012073503A1 (ja) * 2010-12-03 2012-06-07 パナソニック株式会社 不揮発性記憶素子ならびに不揮発性記憶装置及びそれらの製造方法
WO2020179199A1 (ja) * 2019-03-04 2020-09-10 パナソニックセミコンダクターソリューションズ株式会社 不揮発性記憶装置およびその製造方法
US11411181B2 (en) 2020-03-30 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Phase-change memory device and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005523575A (ja) * 2002-04-18 2005-08-04 インフィネオン テクノロジーズ アクチエンゲゼルシャフト Ｍｒａｍ加工におけるトンネル接合部キャップ層、トンネル接合部ハードマスク、およびトンネル接合部スタック種膜の材質の組み合わせ
JP2005524238A (ja) * 2002-04-30 2005-08-11 マイクロン テクノロジー インコーポレイテッド Ｍｒａｍ素子の製造方法
JP2007042804A (ja) * 2005-08-02 2007-02-15 Renesas Technology Corp 半導体装置およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005523575A (ja) * 2002-04-18 2005-08-04 インフィネオン テクノロジーズ アクチエンゲゼルシャフト Ｍｒａｍ加工におけるトンネル接合部キャップ層、トンネル接合部ハードマスク、およびトンネル接合部スタック種膜の材質の組み合わせ
JP2005524238A (ja) * 2002-04-30 2005-08-11 マイクロン テクノロジー インコーポレイテッド Ｍｒａｍ素子の製造方法
JP2007042804A (ja) * 2005-08-02 2007-02-15 Renesas Technology Corp 半導体装置およびその製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009123900A (ja) * 2007-11-14 2009-06-04 Toshiba Corp 不揮発性半導体記憶装置
US8575589B2 (en) 2007-11-14 2013-11-05 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same
WO2012073503A1 (ja) * 2010-12-03 2012-06-07 パナソニック株式会社 不揮発性記憶素子ならびに不揮発性記憶装置及びそれらの製造方法
CN103168359A (zh) * 2010-12-03 2013-06-19 松下电器产业株式会社 非易失性存储元件和非易失性存储装置及它们的制造方法
JPWO2012073503A1 (ja) * 2010-12-03 2014-05-19 パナソニック株式会社 不揮発性記憶素子ならびに不揮発性記憶装置及びそれらの製造方法
US9214628B2 (en) 2010-12-03 2015-12-15 Panasonic Intellectual Property Management Co., Ltd. Nonvolatile memory element, nonvolatile memory device, and manufacturing method for the same
WO2020179199A1 (ja) * 2019-03-04 2020-09-10 パナソニックセミコンダクターソリューションズ株式会社 不揮発性記憶装置およびその製造方法
US11411181B2 (en) 2020-03-30 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Phase-change memory device and method
US11997933B2 (en) 2020-03-30 2024-05-28 Taiwan Semiconductor Manufacturing Co., Ltd. Phase-change memory device and method

Also Published As

Publication number Publication date
TW200901442A (en) 2009-01-01

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