TW200901442A - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same Download PDF

Info

Publication number
TW200901442A
TW200901442A TW096122478A TW96122478A TW200901442A TW 200901442 A TW200901442 A TW 200901442A TW 096122478 A TW096122478 A TW 096122478A TW 96122478 A TW96122478 A TW 96122478A TW 200901442 A TW200901442 A TW 200901442A
Authority
TW
Taiwan
Prior art keywords
insulating film
film
wiring
memory element
semiconductor device
Prior art date
Application number
TW096122478A
Other languages
English (en)
Chinese (zh)
Inventor
Taiji Ema
Original Assignee
Fujitsu Microelectronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Microelectronics Ltd filed Critical Fujitsu Microelectronics Ltd
Publication of TW200901442A publication Critical patent/TW200901442A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW096122478A 2007-06-20 2007-06-22 Semiconductor device and method for manufacturing the same TW200901442A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/062398 WO2008155832A1 (ja) 2007-06-20 2007-06-20 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW200901442A true TW200901442A (en) 2009-01-01

Family

ID=40155998

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096122478A TW200901442A (en) 2007-06-20 2007-06-22 Semiconductor device and method for manufacturing the same

Country Status (2)

Country Link
TW (1) TW200901442A (ja)
WO (1) WO2008155832A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5175525B2 (ja) * 2007-11-14 2013-04-03 株式会社東芝 不揮発性半導体記憶装置
JP5442876B2 (ja) * 2010-12-03 2014-03-12 パナソニック株式会社 不揮発性記憶素子ならびに不揮発性記憶装置及びそれらの製造方法
CN113557613A (zh) * 2019-03-04 2021-10-26 新唐科技日本株式会社 非易失性存储装置及其制造方法
US11411181B2 (en) 2020-03-30 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Phase-change memory device and method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815248B2 (en) * 2002-04-18 2004-11-09 Infineon Technologies Ag Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing
US6783995B2 (en) * 2002-04-30 2004-08-31 Micron Technology, Inc. Protective layers for MRAM devices
JP2007042804A (ja) * 2005-08-02 2007-02-15 Renesas Technology Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
WO2008155832A1 (ja) 2008-12-24

Similar Documents

Publication Publication Date Title
US6417561B1 (en) Keepers for MRAM electrodes
JP4897089B2 (ja) 抵抗変化型不揮発性記憶装置及びその製造方法
JP3540302B2 (ja) 半導体装置およびその製造方法
JP4378631B2 (ja) Ｍｒａｍ素子の製造方法
JP5243746B2 (ja) 磁気記憶装置の製造方法および磁気記憶装置
KR101266656B1 (ko) 반도체 장치 및 그 제조 방법
US10950657B2 (en) Apparatus and methods for integrating magnetoresistive devices
US20020081782A1 (en) Contact and via structure and method of fabrication
KR101764552B1 (ko) 전기 전도 접촉들을 형성하는 반도체 구조체들 및 방법들
WO2008062688A1 (fr) Dispositif de stockage semiconducteur non volatile et son procédé de fabrication
TW201032369A (en) Magnetic tunnel junction and method of fabrication
JP6901686B2 (ja) スイッチング素子、半導体装置及びその製造方法
TW201142927A (en) Reduced defectivity in contacts of a semiconductor device comprising replacement gate electrode structures by using an intermediate cap layer
EP2099071A1 (en) Resistance change device and process for producing the same
TW200901390A (en) Method of manufacturing magnetic memory device and magnetic memory device
JP2008306011A (ja) 不揮発性半導体記憶装置およびその製造方法
US9698342B2 (en) Contact layer for magnetic tunnel junction element and manufacturing method thereof
TW200901442A (en) Semiconductor device and method for manufacturing the same
JP5999768B2 (ja) 半導体装置及びその製造方法
CN112614866B (zh) 相变存储器的制造方法
CN111477738A (zh) 一种制作半导体元件的方法
TWI712035B (zh) 形成磁阻式隨機存取記憶體單元的方法
WO2020145253A1 (ja) スイッチング素子およびその製造方法
JP2005209834A (ja) 磁気記憶装置の製造方法
CN114171550A (zh) 半导体器件以及形成半导体器件的方法