WO2008153054A1 - プラズマ処理装置およびプラズマ処理装置の使用方法 - Google Patents
プラズマ処理装置およびプラズマ処理装置の使用方法 Download PDFInfo
- Publication number
- WO2008153054A1 WO2008153054A1 PCT/JP2008/060673 JP2008060673W WO2008153054A1 WO 2008153054 A1 WO2008153054 A1 WO 2008153054A1 JP 2008060673 W JP2008060673 W JP 2008060673W WO 2008153054 A1 WO2008153054 A1 WO 2008153054A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- processing apparatus
- plasma processing
- microwave
- propagation
- processing container
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008800064538A CN101622912B (zh) | 2007-06-11 | 2008-06-11 | 等离子体处理装置及等离子体处理装置的使用方法 |
JP2009519274A JP4918592B2 (ja) | 2007-06-11 | 2008-06-11 | プラズマ処理装置およびプラズマ処理装置の使用方法 |
US12/663,662 US8568556B2 (en) | 2007-06-11 | 2008-06-11 | Plasma processing apparatus and method for using plasma processing apparatus |
KR1020097024342A KR101183039B1 (ko) | 2007-06-11 | 2008-06-11 | 플라즈마 처리 장치 및 플라즈마 처리 장치의 사용 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007153553 | 2007-06-11 | ||
JP2007-153553 | 2007-06-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008153054A1 true WO2008153054A1 (ja) | 2008-12-18 |
Family
ID=40129659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/060673 WO2008153054A1 (ja) | 2007-06-11 | 2008-06-11 | プラズマ処理装置およびプラズマ処理装置の使用方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8568556B2 (ja) |
JP (1) | JP4918592B2 (ja) |
KR (1) | KR101183039B1 (ja) |
CN (1) | CN101622912B (ja) |
TW (1) | TW200915931A (ja) |
WO (1) | WO2008153054A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012121289A1 (ja) * | 2011-03-08 | 2012-09-13 | 東京エレクトロン株式会社 | 表面波プラズマ処理装置、マイクロ波プラズマ源、およびそれに用いるマイクロ波導入機構 |
WO2014038667A1 (ja) * | 2012-09-06 | 2014-03-13 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び記録媒体 |
JP2017008389A (ja) * | 2015-06-24 | 2017-01-12 | トヨタ自動車株式会社 | プラズマ化学気相成長装置 |
JP2019106358A (ja) * | 2017-12-14 | 2019-06-27 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
JP2021061203A (ja) * | 2019-10-08 | 2021-04-15 | 東京エレクトロン株式会社 | プラズマ処理装置及び天壁 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5520455B2 (ja) * | 2008-06-11 | 2014-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5478058B2 (ja) * | 2008-12-09 | 2014-04-23 | 国立大学法人東北大学 | プラズマ処理装置 |
JP5631088B2 (ja) * | 2010-07-15 | 2014-11-26 | 国立大学法人東北大学 | プラズマ処理装置及びプラズマ処理方法 |
DE102012103938A1 (de) * | 2012-05-04 | 2013-11-07 | Reinhausen Plasma Gmbh | Plasmamodul für eine Plasmaerzeugungsvorrichtung und Plasmaerzeugungsvorrichtung |
CN108878248B (zh) * | 2017-05-16 | 2020-03-17 | 东京毅力科创株式会社 | 等离子体处理装置 |
CN110797248A (zh) * | 2018-08-01 | 2020-02-14 | 北京北方华创微电子装备有限公司 | 表面波等离子体装置和半导体处理设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003045848A (ja) * | 2001-07-27 | 2003-02-14 | Shibaura Mechatronics Corp | プラズマ処理装置 |
JP2004200307A (ja) * | 2002-12-17 | 2004-07-15 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2005044822A (ja) * | 2003-07-22 | 2005-02-17 | Shibaura Mechatronics Corp | プラズマ処理装置 |
JP2005135801A (ja) * | 2003-10-31 | 2005-05-26 | Canon Inc | 処理装置 |
JP2007048982A (ja) * | 2005-08-10 | 2007-02-22 | Tokyo Electron Ltd | プラズマ処理装置の制御方法およびプラズマ処理装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10158847A (ja) * | 1996-12-06 | 1998-06-16 | Toshiba Corp | マイクロ波励起によるプラズマ処理装置 |
JP5036092B2 (ja) | 1999-03-24 | 2012-09-26 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
JP3763392B2 (ja) | 2000-08-03 | 2006-04-05 | シャープ株式会社 | 高周波電極およびプラズマ処理装置 |
JP4554065B2 (ja) * | 2000-12-19 | 2010-09-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP3960775B2 (ja) * | 2001-11-08 | 2007-08-15 | シャープ株式会社 | プラズマプロセス装置および処理装置 |
US20030168012A1 (en) * | 2002-03-07 | 2003-09-11 | Hitoshi Tamura | Plasma processing device and plasma processing method |
JP4141764B2 (ja) * | 2002-08-20 | 2008-08-27 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4220316B2 (ja) * | 2003-06-24 | 2009-02-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
WO2005078782A1 (ja) * | 2004-02-16 | 2005-08-25 | Tokyo Electron Limited | プラズマ処理装置及びプラズマ処理方法 |
JP5013393B2 (ja) * | 2005-03-30 | 2012-08-29 | 東京エレクトロン株式会社 | プラズマ処理装置と方法 |
JP4944198B2 (ja) | 2007-06-11 | 2012-05-30 | 東京エレクトロン株式会社 | プラズマ処理装置および処理方法 |
-
2008
- 2008-06-11 US US12/663,662 patent/US8568556B2/en not_active Expired - Fee Related
- 2008-06-11 TW TW097121741A patent/TW200915931A/zh unknown
- 2008-06-11 JP JP2009519274A patent/JP4918592B2/ja not_active Expired - Fee Related
- 2008-06-11 CN CN2008800064538A patent/CN101622912B/zh not_active Expired - Fee Related
- 2008-06-11 WO PCT/JP2008/060673 patent/WO2008153054A1/ja active Application Filing
- 2008-06-11 KR KR1020097024342A patent/KR101183039B1/ko not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003045848A (ja) * | 2001-07-27 | 2003-02-14 | Shibaura Mechatronics Corp | プラズマ処理装置 |
JP2004200307A (ja) * | 2002-12-17 | 2004-07-15 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2005044822A (ja) * | 2003-07-22 | 2005-02-17 | Shibaura Mechatronics Corp | プラズマ処理装置 |
JP2005135801A (ja) * | 2003-10-31 | 2005-05-26 | Canon Inc | 処理装置 |
JP2007048982A (ja) * | 2005-08-10 | 2007-02-22 | Tokyo Electron Ltd | プラズマ処理装置の制御方法およびプラズマ処理装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012121289A1 (ja) * | 2011-03-08 | 2012-09-13 | 東京エレクトロン株式会社 | 表面波プラズマ処理装置、マイクロ波プラズマ源、およびそれに用いるマイクロ波導入機構 |
WO2014038667A1 (ja) * | 2012-09-06 | 2014-03-13 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び記録媒体 |
JP5955394B2 (ja) * | 2012-09-06 | 2016-07-20 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
JP2017008389A (ja) * | 2015-06-24 | 2017-01-12 | トヨタ自動車株式会社 | プラズマ化学気相成長装置 |
JP2019106358A (ja) * | 2017-12-14 | 2019-06-27 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
JP2021061203A (ja) * | 2019-10-08 | 2021-04-15 | 東京エレクトロン株式会社 | プラズマ処理装置及び天壁 |
WO2021070636A1 (ja) * | 2019-10-08 | 2021-04-15 | 東京エレクトロン株式会社 | プラズマ処理装置及び天壁 |
JP7300957B2 (ja) | 2019-10-08 | 2023-06-30 | 東京エレクトロン株式会社 | プラズマ処理装置及び天壁 |
Also Published As
Publication number | Publication date |
---|---|
CN101622912A (zh) | 2010-01-06 |
JPWO2008153054A1 (ja) | 2010-08-26 |
KR101183039B1 (ko) | 2012-09-20 |
TW200915931A (en) | 2009-04-01 |
KR20100012868A (ko) | 2010-02-08 |
JP4918592B2 (ja) | 2012-04-18 |
US20100170872A1 (en) | 2010-07-08 |
US8568556B2 (en) | 2013-10-29 |
CN101622912B (zh) | 2013-01-23 |
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