WO2008139904A1 - フォトマスクブランク及びフォトマスク - Google Patents

フォトマスクブランク及びフォトマスク Download PDF

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Publication number
WO2008139904A1
WO2008139904A1 PCT/JP2008/058129 JP2008058129W WO2008139904A1 WO 2008139904 A1 WO2008139904 A1 WO 2008139904A1 JP 2008058129 W JP2008058129 W JP 2008058129W WO 2008139904 A1 WO2008139904 A1 WO 2008139904A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
photomask
photomask blank
thickness
blank
Prior art date
Application number
PCT/JP2008/058129
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Toshiyuki Suzuki
Atsushi Kominato
Yasushi Okubo
Osamu Nozawa
Morio Hosoya
Original Assignee
Hoya Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corporation filed Critical Hoya Corporation
Priority to JP2009514089A priority Critical patent/JP5054766B2/ja
Priority to TW097115531A priority patent/TW200905375A/zh
Publication of WO2008139904A1 publication Critical patent/WO2008139904A1/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
PCT/JP2008/058129 2007-04-27 2008-04-25 フォトマスクブランク及びフォトマスク WO2008139904A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009514089A JP5054766B2 (ja) 2007-04-27 2008-04-25 フォトマスクブランク及びフォトマスク
TW097115531A TW200905375A (en) 2007-04-27 2008-04-28 Photomask blank and photomask

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007120318 2007-04-27
JP2007-120318 2007-04-27

Publications (1)

Publication Number Publication Date
WO2008139904A1 true WO2008139904A1 (ja) 2008-11-20

Family

ID=40002120

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058129 WO2008139904A1 (ja) 2007-04-27 2008-04-25 フォトマスクブランク及びフォトマスク

Country Status (4)

Country Link
JP (1) JP5054766B2 (ko)
KR (1) KR20100009558A (ko)
TW (1) TW200905375A (ko)
WO (1) WO2008139904A1 (ko)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010119811A1 (ja) * 2009-04-16 2010-10-21 Hoya株式会社 マスクブランク及び転写用マスク並びに膜緻密性評価方法
JP2010267836A (ja) * 2009-05-15 2010-11-25 Shin-Etsu Chemical Co Ltd エッチング方法及びフォトマスクブランクの加工方法
CN101950125A (zh) * 2009-06-11 2011-01-19 信越化学工业株式会社 光掩模制造方法
JP2011059502A (ja) * 2009-09-11 2011-03-24 Hoya Corp フォトマスクブランクおよびフォトマスクの製造方法
WO2011046073A1 (ja) * 2009-10-12 2011-04-21 Hoya株式会社 転写用マスク、転写用マスクの製造方法及び半導体デバイスの製造方法
JP2011081356A (ja) * 2009-08-25 2011-04-21 Hoya Corp マスクブランク、転写用マスクおよびこれらの製造方法
WO2011046075A1 (ja) * 2009-10-12 2011-04-21 Hoya株式会社 転写用マスクの製造方法及び半導体デバイスの製造方法
EP2418542A2 (en) 2010-08-04 2012-02-15 Shin-Etsu Chemical Co., Ltd. Binary photomask blank and binary photomask making method
JP2013065036A (ja) * 2012-12-05 2013-04-11 Hoya Corp 半導体デバイスの製造方法
JP2013537318A (ja) * 2010-09-14 2013-09-30 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィシステム内のフレア効果の補正
JP2013231998A (ja) * 2008-03-31 2013-11-14 Hoya Corp フォトマスクブランク、フォトマスクおよびフォトマスクブランクの製造方法
JP2014059575A (ja) * 2009-03-31 2014-04-03 Hoya Corp マスクブランクおよび転写用マスク
JP2015007788A (ja) * 2014-08-06 2015-01-15 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP2015167199A (ja) * 2014-03-04 2015-09-24 Hoya株式会社 インプリント用モールドブランクおよびインプリント用モールド
KR20170031617A (ko) 2015-09-11 2017-03-21 아사히 가라스 가부시키가이샤 마스크 블랭크
CN110603489A (zh) * 2017-03-16 2019-12-20 Hoya株式会社 掩模坯料、转印用掩模及半导体器件的制造方法
CN113311660A (zh) * 2021-06-03 2021-08-27 上海传芯半导体有限公司 掩模基版的制作方法及具有等离子体加热装置的涂胶设备
TWI758694B (zh) * 2017-03-24 2022-03-21 日商Ｈｏｙａ股份有限公司 顯示裝置製造用光罩之製造方法、及顯示裝置之製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015125628A (ja) * 2013-12-26 2015-07-06 大日本印刷株式会社 フィルムセンサ、タッチ位置検出機能付き表示装置、およびフィルムセンサを作製するための積層体
KR20240046289A (ko) * 2018-03-15 2024-04-08 다이니폰 인사츠 가부시키가이샤 대형 포토마스크
JP6938428B2 (ja) 2018-05-30 2021-09-22 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095437A (ja) * 1983-10-28 1985-05-28 Hoya Corp フオトマスクブランク
JPH04246649A (ja) * 1991-01-31 1992-09-02 Hoya Corp フォトマスクブランク及びその製造方法、並びにフォト　　　　　　　　　　　マスク及びその製造方法
JPH06102656A (ja) * 1992-09-24 1994-04-15 Mitsubishi Electric Corp フォトマスク形成方法
JPH11125896A (ja) * 1997-08-19 1999-05-11 Toppan Printing Co Ltd フォトマスクブランクス及びフォトマスク
WO2000007072A1 (fr) * 1998-07-31 2000-02-10 Hoya Corporation Ebauche pour photomasque, photomasque, ses procedes de fabrication et procede de formage de micromodeles
JP2005128278A (ja) * 2003-10-24 2005-05-19 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP2006078807A (ja) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスク
JP2007241060A (ja) * 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスクの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001100393A (ja) * 1999-09-28 2001-04-13 Toshiba Corp フォトマスク
JP3359620B2 (ja) * 2000-09-01 2002-12-24 株式会社半導体先端テクノロジーズ ホトマスクの製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095437A (ja) * 1983-10-28 1985-05-28 Hoya Corp フオトマスクブランク
JPH04246649A (ja) * 1991-01-31 1992-09-02 Hoya Corp フォトマスクブランク及びその製造方法、並びにフォト　　　　　　　　　　　マスク及びその製造方法
JPH06102656A (ja) * 1992-09-24 1994-04-15 Mitsubishi Electric Corp フォトマスク形成方法
JPH11125896A (ja) * 1997-08-19 1999-05-11 Toppan Printing Co Ltd フォトマスクブランクス及びフォトマスク
WO2000007072A1 (fr) * 1998-07-31 2000-02-10 Hoya Corporation Ebauche pour photomasque, photomasque, ses procedes de fabrication et procede de formage de micromodeles
JP2005128278A (ja) * 2003-10-24 2005-05-19 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP2006078807A (ja) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスク
JP2007241060A (ja) * 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスクの製造方法

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013231998A (ja) * 2008-03-31 2013-11-14 Hoya Corp フォトマスクブランク、フォトマスクおよびフォトマスクブランクの製造方法
US9075314B2 (en) 2008-03-31 2015-07-07 Hoya Corporation Photomask blank, photomask, and method for manufacturing photomask blank
JP2014059575A (ja) * 2009-03-31 2014-04-03 Hoya Corp マスクブランクおよび転写用マスク
WO2010119811A1 (ja) * 2009-04-16 2010-10-21 Hoya株式会社 マスクブランク及び転写用マスク並びに膜緻密性評価方法
JPWO2010119811A1 (ja) * 2009-04-16 2012-10-22 Hoya株式会社 マスクブランク及び転写用マスク並びに膜緻密性評価方法
US8709681B2 (en) 2009-04-16 2014-04-29 Hoya Corporation Mask blank, transfer mask, and film denseness evaluation method
CN101968605B (zh) * 2009-05-15 2014-03-26 信越化学工业株式会社 蚀刻方法和光掩模坯料的加工方法
JP2010267836A (ja) * 2009-05-15 2010-11-25 Shin-Etsu Chemical Co Ltd エッチング方法及びフォトマスクブランクの加工方法
CN101968605A (zh) * 2009-05-15 2011-02-09 信越化学工业株式会社 蚀刻方法和光掩模坯料的加工方法
US8920666B2 (en) 2009-05-15 2014-12-30 Shin-Etsu Chemical Co., Ltd. Etching method and photomask blank processing method
CN101950125B (zh) * 2009-06-11 2013-09-04 信越化学工业株式会社 光掩模制造方法
CN101950125A (zh) * 2009-06-11 2011-01-19 信越化学工业株式会社 光掩模制造方法
US8309277B2 (en) 2009-06-11 2012-11-13 Shin-Etsu Chemical Co., Ltd. Photomask making method
EP2261736A3 (en) * 2009-06-11 2012-10-17 Shin-Etsu Chemical Co., Ltd. Method of manufacturing a photomask
JP2011081356A (ja) * 2009-08-25 2011-04-21 Hoya Corp マスクブランク、転写用マスクおよびこれらの製造方法
JP2011059502A (ja) * 2009-09-11 2011-03-24 Hoya Corp フォトマスクブランクおよびフォトマスクの製造方法
WO2011046075A1 (ja) * 2009-10-12 2011-04-21 Hoya株式会社 転写用マスクの製造方法及び半導体デバイスの製造方法
US8197993B2 (en) 2009-10-12 2012-06-12 Hoya Corporation Method of manufacturing transfer mask and method of manufacturing semiconductor device
JP2011209762A (ja) * 2009-10-12 2011-10-20 Hoya Corp 転写用マスク、及び半導体デバイスの製造方法
US8658334B2 (en) 2009-10-12 2014-02-25 Hoya Corporation Transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device
KR101061334B1 (ko) 2009-10-12 2011-08-31 호야 가부시키가이샤 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP2011102969A (ja) * 2009-10-12 2011-05-26 Hoya Corp 転写用マスクの製造方法及び半導体デバイスの製造方法
JP2011102968A (ja) * 2009-10-12 2011-05-26 Hoya Corp 転写用マスク、転写用マスクの製造方法及び半導体デバイスの製造方法
WO2011046073A1 (ja) * 2009-10-12 2011-04-21 Hoya株式会社 転写用マスク、転写用マスクの製造方法及び半導体デバイスの製造方法
KR20120057496A (ko) 2010-08-04 2012-06-05 신에쓰 가가꾸 고교 가부시끼가이샤 바이너리 포토마스크 블랭크 및 바이너리 포토마스크의 제조 방법
EP2418542A2 (en) 2010-08-04 2012-02-15 Shin-Etsu Chemical Co., Ltd. Binary photomask blank and binary photomask making method
US8980503B2 (en) 2010-08-04 2015-03-17 Shin-Etsu Chemical Co., Ltd. Binary photomask blank and binary photomask making method
JP2013537318A (ja) * 2010-09-14 2013-09-30 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィシステム内のフレア効果の補正
US10423745B2 (en) 2010-09-14 2019-09-24 Asml Netherlands B.V. Correction for flare effects in lithography system
JP2013065036A (ja) * 2012-12-05 2013-04-11 Hoya Corp 半導体デバイスの製造方法
JP2015167199A (ja) * 2014-03-04 2015-09-24 Hoya株式会社 インプリント用モールドブランクおよびインプリント用モールド
JP2015007788A (ja) * 2014-08-06 2015-01-15 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
KR20170031617A (ko) 2015-09-11 2017-03-21 아사히 가라스 가부시키가이샤 마스크 블랭크
CN110603489A (zh) * 2017-03-16 2019-12-20 Hoya株式会社 掩模坯料、转印用掩模及半导体器件的制造方法
TWI758694B (zh) * 2017-03-24 2022-03-21 日商Ｈｏｙａ股份有限公司 顯示裝置製造用光罩之製造方法、及顯示裝置之製造方法
CN113311660A (zh) * 2021-06-03 2021-08-27 上海传芯半导体有限公司 掩模基版的制作方法及具有等离子体加热装置的涂胶设备

Also Published As

Publication number Publication date
TW200905375A (en) 2009-02-01
JPWO2008139904A1 (ja) 2010-07-29
KR20100009558A (ko) 2010-01-27
JP5054766B2 (ja) 2012-10-24

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