SG11201901299SA - Mask blank, transfer mask, and method of manufacturing semiconductor device - Google Patents

Mask blank, transfer mask, and method of manufacturing semiconductor device

Info

Publication number
SG11201901299SA
SG11201901299SA SG11201901299SA SG11201901299SA SG11201901299SA SG 11201901299S A SG11201901299S A SG 11201901299SA SG 11201901299S A SG11201901299S A SG 11201901299SA SG 11201901299S A SG11201901299S A SG 11201901299SA SG 11201901299S A SG11201901299S A SG 11201901299SA
Authority
SG
Singapore
Prior art keywords
light
less
wavelength
mask blank
shielding film
Prior art date
Application number
SG11201901299SA
Inventor
Hiroaki Shishido
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201901299SA publication Critical patent/SG11201901299SA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Provided is a mask blank including a light shielding film pattern having high ArF light fastness to solve a problem of detection sensitivity that becomes insufficient during mark detection using long-wavelength light having a wavelength of 800 nm or more and 900 nm or less. A mask blank includes a light shielding film on a transparent substrate. In the mask blank, the light shielding film is a single layer film formed of a material containing silicon and nitrogen, and the light shielding film has an optical density to an ArF excimer laser exposure light of 2.5 or more, a surface reflectance to the exposure light of 40% or less, a back-surface reflectance to the exposure light of 40% or less, a transmittance to a light having a wavelength of 900 nm of 50% or less, an extinction coefficient to a light having a wavelength of 900 nm of 0.04 or more, and a thickness of 60 nm or less.
SG11201901299SA 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device SG11201901299SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016165550 2016-08-26
PCT/JP2017/028043 WO2018037863A1 (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
SG11201901299SA true SG11201901299SA (en) 2019-03-28

Family

ID=61246640

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10202007863UA SG10202007863UA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device
SG10202000604QA SG10202000604QA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device
SG11201901299SA SG11201901299SA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device

Family Applications Before (2)

Application Number Title Priority Date Filing Date
SG10202007863UA SG10202007863UA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device
SG10202000604QA SG10202000604QA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device

Country Status (7)

Country Link
US (3) US11112690B2 (en)
JP (3) JP6297766B1 (en)
KR (3) KR102254035B1 (en)
CN (3) CN109643058B (en)
SG (3) SG10202007863UA (en)
TW (3) TWI685880B (en)
WO (1) WO2018037863A1 (en)

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JP6743679B2 (en) * 2016-03-02 2020-08-19 信越化学工業株式会社 Photomask blank and photomask manufacturing method
SG10202007863UA (en) * 2016-08-26 2020-10-29 Hoya Corp Mask blank, transfer mask, and method of manufacturing semiconductor device
JP6932552B2 (en) * 2017-05-31 2021-09-08 Hoya株式会社 Mask blank, transfer mask manufacturing method and semiconductor device manufacturing method
JP2020013100A (en) * 2018-07-13 2020-01-23 エスアンドエス テック カンパニー リミテッド Blank mask, photomask and method for manufacturing the same
KR20200055871A (en) * 2018-11-13 2020-05-22 삼성디스플레이 주식회사 Substrate etching method
JP7331793B2 (en) * 2020-06-30 2023-08-23 信越化学工業株式会社 Photomask manufacturing method and photomask blank
KR102624206B1 (en) * 2021-02-25 2024-01-15 인하대학교 산학협력단 Method and Apparatus for manufacturing Light-Shielding Layer for ArF Phase Shift Blank Mask
TWI814573B (en) * 2022-09-07 2023-09-01 致伸科技股份有限公司 Keyboard device with light adjusting structure

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JPH08115912A (en) * 1994-10-14 1996-05-07 Nippon Telegr & Teleph Corp <Ntt> Manufacture of silicon nitride film
JPH11184067A (en) * 1997-12-19 1999-07-09 Hoya Corp Phase shift mask and phase shift mask blank
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Also Published As

Publication number Publication date
CN114675486A (en) 2022-06-28
CN114609856A (en) 2022-06-10
KR102281354B1 (en) 2021-07-26
KR102254035B1 (en) 2021-05-20
WO2018037863A1 (en) 2018-03-01
US20190204728A1 (en) 2019-07-04
JP6495496B2 (en) 2019-04-03
KR20210059016A (en) 2021-05-24
TW201820405A (en) 2018-06-01
JP2018109775A (en) 2018-07-12
SG10202007863UA (en) 2020-10-29
TWI685880B (en) 2020-02-21
KR102292434B1 (en) 2021-08-20
TWI765636B (en) 2022-05-21
CN109643058B (en) 2022-03-29
KR20190021454A (en) 2019-03-05
JP6297766B1 (en) 2018-03-20
TW202129707A (en) 2021-08-01
JP6636664B2 (en) 2020-01-29
US20210373432A1 (en) 2021-12-02
US11543744B2 (en) 2023-01-03
JPWO2018037863A1 (en) 2018-08-23
TW202020938A (en) 2020-06-01
SG10202000604QA (en) 2020-03-30
CN109643058A (en) 2019-04-16
JP2019105858A (en) 2019-06-27
KR20210093383A (en) 2021-07-27
US11112690B2 (en) 2021-09-07
US20230099176A1 (en) 2023-03-30
TWI727603B (en) 2021-05-11

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