WO2008133278A1 - シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット - Google Patents
シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット Download PDFInfo
- Publication number
- WO2008133278A1 WO2008133278A1 PCT/JP2008/057862 JP2008057862W WO2008133278A1 WO 2008133278 A1 WO2008133278 A1 WO 2008133278A1 JP 2008057862 W JP2008057862 W JP 2008057862W WO 2008133278 A1 WO2008133278 A1 WO 2008133278A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- dopant
- single crystal
- silicon single
- melt
- accommodation chamber
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/597,116 US10294583B2 (en) | 2007-04-24 | 2008-04-23 | Producing method and apparatus of silicon single crystal, and silicon single crystal ingot |
DE112008000893.0T DE112008000893B8 (de) | 2007-04-24 | 2008-04-23 | Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-114183 | 2007-04-24 | ||
JP2007-114184 | 2007-04-24 | ||
JP2007114184A JP5437565B2 (ja) | 2007-04-24 | 2007-04-24 | 半導体単結晶の製造装置 |
JP2007114183A JP5176101B2 (ja) | 2007-04-24 | 2007-04-24 | シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008133278A1 true WO2008133278A1 (ja) | 2008-11-06 |
Family
ID=39925726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/057862 WO2008133278A1 (ja) | 2007-04-24 | 2008-04-23 | シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット |
Country Status (3)
Country | Link |
---|---|
US (1) | US10294583B2 (ja) |
DE (1) | DE112008000893B8 (ja) |
WO (1) | WO2008133278A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130305982A1 (en) * | 2010-10-21 | 2013-11-21 | Sung Wan Hong | Process for growing silicon carbide single crystal and device for the same |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5302556B2 (ja) | 2008-03-11 | 2013-10-02 | Sumco Techxiv株式会社 | シリコン単結晶引上装置及びシリコン単結晶の製造方法 |
US9102035B2 (en) | 2012-03-12 | 2015-08-11 | MEMC Electronics Materials S.p.A. | Method for machining seed rods for use in a chemical vapor deposition polysilicon reactor |
WO2014141309A1 (en) * | 2013-03-15 | 2014-09-18 | Memc Electronic Materials S.P.A. | Gas doping systems for controlled doping of a melt of semiconductor or solar-grade material |
JP6528178B2 (ja) * | 2015-07-31 | 2019-06-12 | 株式会社Sumco | シリコン単結晶の製造方法 |
JP6702141B2 (ja) | 2016-11-01 | 2020-05-27 | 信越半導体株式会社 | 単結晶引上げ装置 |
JP7398460B2 (ja) * | 2018-12-14 | 2023-12-14 | グローバルウェーハズ カンパニー リミテッド | 固体ドーパントを昇華させるための多孔質の仕切り部材を備えたドーピング導管を含むインゴット引上げ装置 |
US11028500B2 (en) * | 2018-12-14 | 2021-06-08 | Globalwafers Co., Ltd. | Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant |
US11028499B2 (en) * | 2018-12-14 | 2021-06-08 | Globalwafers Co., Ltd. | Methods for preparing a doped ingot |
EP3835463A1 (de) * | 2019-12-13 | 2021-06-16 | Siltronic AG | Verfahren und vorrichtung zur herstellung eines einkristalls aus silizium, der mit dotierstoff vom n-typ dotiert ist |
US11499245B2 (en) | 2020-12-30 | 2022-11-15 | Globalwafers Co., Ltd. | Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems |
US11866844B2 (en) * | 2020-12-31 | 2024-01-09 | Globalwafers Co., Ltd. | Methods for producing a single crystal silicon ingot using a vaporized dopant |
KR20230124727A (ko) * | 2020-12-31 | 2023-08-25 | 글로벌웨이퍼스 씨오., 엘티디. | 기화된 도펀트를 사용하여 단결정 실리콘 잉곳을 생성하기위한 시스템들 및 방법들 |
US11795569B2 (en) | 2020-12-31 | 2023-10-24 | Globalwafers Co., Ltd. | Systems for producing a single crystal silicon ingot using a vaporized dopant |
CN113862775B (zh) * | 2021-09-30 | 2022-06-10 | 西安奕斯伟材料科技有限公司 | 一种用于制造掺氮单晶硅的设备及方法 |
CN114318507B (zh) * | 2021-12-23 | 2023-10-31 | 山东有研半导体材料有限公司 | 一种重掺砷大直径低阻硅单晶的拉制方法 |
EP4353878A1 (de) | 2022-10-14 | 2024-04-17 | Siltronic AG | Verfahren zur herstellung eines einkristalls aus silizium, der mit dotierstoff vom n-typ dotiert ist, gemäss der cz-methode |
Citations (3)
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JPS59190292A (ja) * | 1983-04-08 | 1984-10-29 | Shin Etsu Handotai Co Ltd | 半導体シリコン単結晶の抵抗率制御方法 |
JP2003532613A (ja) * | 2000-05-11 | 2003-11-05 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | チョクラルスキー法により成長させたシリコン結晶において低抵抗率を得る多段階ヒ素ドーピング法 |
JP2005247671A (ja) * | 2004-03-08 | 2005-09-15 | Toshiba Ceramics Co Ltd | 単結晶引上装置 |
Family Cites Families (14)
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FI20450A (fi) * | 1941-08-21 | 1945-02-10 | För avvattning av vattenbemängda material avsedd valspress | |
GB797377A (en) | 1955-10-18 | 1958-07-02 | Gen Electric Co Ltd | Improvements in or relating to the production of semi-conductor bodies |
DE3577405D1 (de) | 1984-12-28 | 1990-06-07 | Sumitomo Electric Industries | Verfahren zur herstellung von polykristallen von halbleiterverbindungen und vorrichtung zu dessen durchfuehrung. |
US5260037A (en) * | 1990-03-12 | 1993-11-09 | Osaka Titanium Co., Ltd. | Apparatus for producing silicon single crystal |
DE69428302T2 (de) | 1993-03-29 | 2002-07-04 | Kabushiki Kaisha Toshiba, Kawasaki | Regulierung der Sauerstoffkonzentration in einem Einkristall, der aus einer ein Gruppe V Element enthaltenden Schmelze gezogenen wird. |
DE4318184A1 (de) * | 1993-06-01 | 1994-12-08 | Wacker Chemitronic | Verfahren und Vorrichtung zum Ziehen von Einkristallen |
JP3841863B2 (ja) * | 1995-12-13 | 2006-11-08 | コマツ電子金属株式会社 | シリコン単結晶の引き上げ方法 |
JPH09227275A (ja) * | 1996-02-28 | 1997-09-02 | Sumitomo Sitix Corp | ドープ剤添加装置 |
JP2003532611A (ja) | 2000-05-10 | 2003-11-05 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | シリコン結晶成長処理に砒素不純物を供給する装置およびその方法 |
JP2005015312A (ja) * | 2003-06-27 | 2005-01-20 | Shin Etsu Handotai Co Ltd | 単結晶の製造方法及び単結晶 |
JP4356517B2 (ja) | 2004-05-28 | 2009-11-04 | 株式会社Sumco | シリコン単結晶引上装置およびシリコン単結晶の製造方法 |
JP4649130B2 (ja) * | 2004-06-22 | 2011-03-09 | キヤノン株式会社 | 撮像装置及びその制御方法 |
JP4631717B2 (ja) * | 2006-01-19 | 2011-02-16 | 株式会社Sumco | Igbt用シリコン単結晶ウェーハ及びigbt用シリコン単結晶ウェーハの製造方法 |
WO2008010577A1 (fr) * | 2006-07-20 | 2008-01-24 | Sumco Techxiv Corporation | Procédé d'injection de dopant, monocristal de silicium de type n, appareil de dopage et dispositif élévateur |
-
2008
- 2008-04-23 WO PCT/JP2008/057862 patent/WO2008133278A1/ja active Application Filing
- 2008-04-23 DE DE112008000893.0T patent/DE112008000893B8/de active Active
- 2008-04-23 US US12/597,116 patent/US10294583B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59190292A (ja) * | 1983-04-08 | 1984-10-29 | Shin Etsu Handotai Co Ltd | 半導体シリコン単結晶の抵抗率制御方法 |
JP2003532613A (ja) * | 2000-05-11 | 2003-11-05 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | チョクラルスキー法により成長させたシリコン結晶において低抵抗率を得る多段階ヒ素ドーピング法 |
JP2005247671A (ja) * | 2004-03-08 | 2005-09-15 | Toshiba Ceramics Co Ltd | 単結晶引上装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130305982A1 (en) * | 2010-10-21 | 2013-11-21 | Sung Wan Hong | Process for growing silicon carbide single crystal and device for the same |
US9359690B2 (en) * | 2010-10-21 | 2016-06-07 | Sk Innovation Co., Ltd. | Process for growing silicon carbide single crystal and device for the same |
Also Published As
Publication number | Publication date |
---|---|
US20100294999A1 (en) | 2010-11-25 |
DE112008000893B4 (de) | 2021-07-29 |
DE112008000893B8 (de) | 2022-02-24 |
US10294583B2 (en) | 2019-05-21 |
DE112008000893T5 (de) | 2010-01-28 |
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