WO2008133278A1 - シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット - Google Patents

シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット Download PDF

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Publication number
WO2008133278A1
WO2008133278A1 PCT/JP2008/057862 JP2008057862W WO2008133278A1 WO 2008133278 A1 WO2008133278 A1 WO 2008133278A1 JP 2008057862 W JP2008057862 W JP 2008057862W WO 2008133278 A1 WO2008133278 A1 WO 2008133278A1
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WO
WIPO (PCT)
Prior art keywords
dopant
single crystal
silicon single
melt
accommodation chamber
Prior art date
Application number
PCT/JP2008/057862
Other languages
English (en)
French (fr)
Inventor
Yasuhito Narushima
Shinichi Kawazoe
Fukuo Ogawa
Masahiro Irokawa
Toshimichi Kubota
Original Assignee
Sumco Techxiv Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007114184A external-priority patent/JP5437565B2/ja
Priority claimed from JP2007114183A external-priority patent/JP5176101B2/ja
Application filed by Sumco Techxiv Corporation filed Critical Sumco Techxiv Corporation
Priority to US12/597,116 priority Critical patent/US10294583B2/en
Priority to DE112008000893.0T priority patent/DE112008000893B8/de
Publication of WO2008133278A1 publication Critical patent/WO2008133278A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　炉内の熱的環境の経時変化の影響を受けることなくドーパントの昇華速度を正確に制御できるようにする。収容室と供給管を備えたドーパント供給装置が設けられる。昇華可能なドーパントが収容されている。収容室内のドーパントが昇華された場合に昇華されたドーパントを融液に導く。ドーパント供給装置の収容室内のドーパントを加熱する。所望の昇華速度でドーパントが昇華されるように加熱手段による加熱量を制御する。シリコン単結晶の直胴部の前半部が形成されるまでのドーパント濃度が、低濃度の状態か、または無添加の状態となるように、融液にドーパントを供給する。シリコン単結晶の直胴部の前半部が形成された以降は、結晶各部が、ドーパントが所望する高濃度に添加された状態となるように、融液にドーパントを供給する。
PCT/JP2008/057862 2007-04-24 2008-04-23 シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット WO2008133278A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/597,116 US10294583B2 (en) 2007-04-24 2008-04-23 Producing method and apparatus of silicon single crystal, and silicon single crystal ingot
DE112008000893.0T DE112008000893B8 (de) 2007-04-24 2008-04-23 Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-114183 2007-04-24
JP2007-114184 2007-04-24
JP2007114184A JP5437565B2 (ja) 2007-04-24 2007-04-24 半導体単結晶の製造装置
JP2007114183A JP5176101B2 (ja) 2007-04-24 2007-04-24 シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット

Publications (1)

Publication Number Publication Date
WO2008133278A1 true WO2008133278A1 (ja) 2008-11-06

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057862 WO2008133278A1 (ja) 2007-04-24 2008-04-23 シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット

Country Status (3)

Country Link
US (1) US10294583B2 (ja)
DE (1) DE112008000893B8 (ja)
WO (1) WO2008133278A1 (ja)

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US20130305982A1 (en) * 2010-10-21 2013-11-21 Sung Wan Hong Process for growing silicon carbide single crystal and device for the same

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JP5302556B2 (ja) 2008-03-11 2013-10-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置及びシリコン単結晶の製造方法
US9102035B2 (en) 2012-03-12 2015-08-11 MEMC Electronics Materials S.p.A. Method for machining seed rods for use in a chemical vapor deposition polysilicon reactor
WO2014141309A1 (en) * 2013-03-15 2014-09-18 Memc Electronic Materials S.P.A. Gas doping systems for controlled doping of a melt of semiconductor or solar-grade material
JP6528178B2 (ja) * 2015-07-31 2019-06-12 株式会社Sumco シリコン単結晶の製造方法
JP6702141B2 (ja) 2016-11-01 2020-05-27 信越半導体株式会社 単結晶引上げ装置
JP7398460B2 (ja) * 2018-12-14 2023-12-14 グローバルウェーハズ カンパニー リミテッド 固体ドーパントを昇華させるための多孔質の仕切り部材を備えたドーピング導管を含むインゴット引上げ装置
US11028500B2 (en) * 2018-12-14 2021-06-08 Globalwafers Co., Ltd. Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant
US11028499B2 (en) * 2018-12-14 2021-06-08 Globalwafers Co., Ltd. Methods for preparing a doped ingot
EP3835463A1 (de) * 2019-12-13 2021-06-16 Siltronic AG Verfahren und vorrichtung zur herstellung eines einkristalls aus silizium, der mit dotierstoff vom n-typ dotiert ist
US11499245B2 (en) 2020-12-30 2022-11-15 Globalwafers Co., Ltd. Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems
US11866844B2 (en) * 2020-12-31 2024-01-09 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using a vaporized dopant
KR20230124727A (ko) * 2020-12-31 2023-08-25 글로벌웨이퍼스 씨오., 엘티디. 기화된 도펀트를 사용하여 단결정 실리콘 잉곳을 생성하기위한 시스템들 및 방법들
US11795569B2 (en) 2020-12-31 2023-10-24 Globalwafers Co., Ltd. Systems for producing a single crystal silicon ingot using a vaporized dopant
CN113862775B (zh) * 2021-09-30 2022-06-10 西安奕斯伟材料科技有限公司 一种用于制造掺氮单晶硅的设备及方法
CN114318507B (zh) * 2021-12-23 2023-10-31 山东有研半导体材料有限公司 一种重掺砷大直径低阻硅单晶的拉制方法
EP4353878A1 (de) 2022-10-14 2024-04-17 Siltronic AG Verfahren zur herstellung eines einkristalls aus silizium, der mit dotierstoff vom n-typ dotiert ist, gemäss der cz-methode

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130305982A1 (en) * 2010-10-21 2013-11-21 Sung Wan Hong Process for growing silicon carbide single crystal and device for the same
US9359690B2 (en) * 2010-10-21 2016-06-07 Sk Innovation Co., Ltd. Process for growing silicon carbide single crystal and device for the same

Also Published As

Publication number Publication date
US20100294999A1 (en) 2010-11-25
DE112008000893B4 (de) 2021-07-29
DE112008000893B8 (de) 2022-02-24
US10294583B2 (en) 2019-05-21
DE112008000893T5 (de) 2010-01-28

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