WO2008123420A1 - 酸化インジウム系透明導電膜の製造方法 - Google Patents
酸化インジウム系透明導電膜の製造方法 Download PDFInfo
- Publication number
- WO2008123420A1 WO2008123420A1 PCT/JP2008/056104 JP2008056104W WO2008123420A1 WO 2008123420 A1 WO2008123420 A1 WO 2008123420A1 JP 2008056104 W JP2008056104 W JP 2008056104W WO 2008123420 A1 WO2008123420 A1 WO 2008123420A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- indium oxide
- partial pressure
- oxygen partial
- predetermined
- Prior art date
Links
- 239000012789 electroconductive film Substances 0.000 title abstract 3
- 229910052738 indium Inorganic materials 0.000 title abstract 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 11
- 238000000137 annealing Methods 0.000 abstract 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 5
- 229910052760 oxygen Inorganic materials 0.000 abstract 5
- 239000001301 oxygen Substances 0.000 abstract 5
- 239000002253 acid Substances 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910003437 indium oxide Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 238000005477 sputtering target Methods 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009509216A JPWO2008123420A1 (ja) | 2007-03-30 | 2008-03-28 | 酸化インジウム系透明導電膜の製造方法 |
US12/593,797 US20110011731A1 (en) | 2007-03-30 | 2008-03-28 | Process for producing indium oxide-type transparent electroconductive film |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007095782 | 2007-03-30 | ||
JP2007-095782 | 2007-03-30 | ||
JP2007-260437 | 2007-10-03 | ||
JP2007260437 | 2007-10-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008123420A1 true WO2008123420A1 (ja) | 2008-10-16 |
Family
ID=39830905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/056104 WO2008123420A1 (ja) | 2007-03-30 | 2008-03-28 | 酸化インジウム系透明導電膜の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20110011731A1 (ja) |
JP (1) | JPWO2008123420A1 (ja) |
KR (1) | KR20090127357A (ja) |
TW (1) | TW200901228A (ja) |
WO (1) | WO2008123420A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009044897A1 (ja) * | 2007-10-03 | 2009-04-09 | Mitsui Mining & Smelting Co., Ltd. | 酸化インジウム系透明導電膜及びその製造方法 |
EP2623478A4 (en) * | 2010-09-29 | 2014-03-26 | Tosoh Corp | OXIDE SINTERED BODY AND MANUFACTURING METHOD THEREOF, CATHODIC SPUTTERING TARGET, OXIDE TRANSPARENT ELECTROCONDUCTIVE FILM, AND MANUFACTURING METHOD THEREOF, AND SOLAR BATTERY |
WO2014112414A1 (ja) * | 2013-01-17 | 2014-07-24 | 旭硝子株式会社 | 透光性基板の製造方法、透光性基板、および有機led素子 |
WO2014115770A1 (ja) * | 2013-01-24 | 2014-07-31 | 住友金属鉱山株式会社 | 透明導電性基材ならびにその製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6270738B2 (ja) * | 2012-12-19 | 2018-01-31 | 株式会社カネカ | 透明電極付き基板およびその製造方法 |
WO2018047977A1 (ja) * | 2016-09-12 | 2018-03-15 | 株式会社アルバック | 透明導電膜付き基板の製造方法、透明導電膜付き基板の製造装置、及び透明導電膜付き基板 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08167479A (ja) * | 1994-12-14 | 1996-06-25 | Toppan Printing Co Ltd | 透明導電膜及びその製造方法 |
JPH08171824A (ja) * | 1994-03-27 | 1996-07-02 | Gunze Ltd | 透明導電膜の製造方法 |
JP2000044236A (ja) * | 1998-07-24 | 2000-02-15 | Hoya Corp | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2001335918A (ja) * | 2000-03-21 | 2001-12-07 | Tsuguo Ishihara | Ito透明導電膜の形成方法 |
JP2002050231A (ja) * | 2000-08-04 | 2002-02-15 | Geomatec Co Ltd | 透明導電膜およびその製造方法並びにその用途 |
JP2004339607A (ja) * | 2003-04-24 | 2004-12-02 | Tosoh Corp | 透明導電膜およびスパッタリングターゲット |
JP2005135649A (ja) * | 2003-10-28 | 2005-05-26 | Mitsui Mining & Smelting Co Ltd | 酸化インジウム系透明導電膜及びその製造方法 |
JP2005268616A (ja) * | 2004-03-19 | 2005-09-29 | Tosoh Corp | 透明導電膜およびその製造方法 |
JP2007294447A (ja) * | 2006-03-31 | 2007-11-08 | Mitsui Mining & Smelting Co Ltd | 酸化インジウム系透明導電膜及びその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5264077A (en) * | 1989-06-15 | 1993-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing a conductive oxide pattern |
KR100505536B1 (ko) * | 2002-03-27 | 2005-08-04 | 스미토모 긴조쿠 고잔 가부시키가이샤 | 투명한 도전성 박막, 그것의 제조방법, 그것의 제조를위한 소결 타겟, 디스플레이 패널용의 투명한 전기전도성기재, 및 유기 전기루미네선스 디바이스 |
US8728285B2 (en) * | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
-
2008
- 2008-03-28 KR KR1020097022086A patent/KR20090127357A/ko not_active Application Discontinuation
- 2008-03-28 US US12/593,797 patent/US20110011731A1/en not_active Abandoned
- 2008-03-28 WO PCT/JP2008/056104 patent/WO2008123420A1/ja active Application Filing
- 2008-03-28 JP JP2009509216A patent/JPWO2008123420A1/ja active Pending
- 2008-03-31 TW TW097111628A patent/TW200901228A/zh unknown
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08171824A (ja) * | 1994-03-27 | 1996-07-02 | Gunze Ltd | 透明導電膜の製造方法 |
JPH08167479A (ja) * | 1994-12-14 | 1996-06-25 | Toppan Printing Co Ltd | 透明導電膜及びその製造方法 |
JP2000044236A (ja) * | 1998-07-24 | 2000-02-15 | Hoya Corp | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2001335918A (ja) * | 2000-03-21 | 2001-12-07 | Tsuguo Ishihara | Ito透明導電膜の形成方法 |
JP2002050231A (ja) * | 2000-08-04 | 2002-02-15 | Geomatec Co Ltd | 透明導電膜およびその製造方法並びにその用途 |
JP2004339607A (ja) * | 2003-04-24 | 2004-12-02 | Tosoh Corp | 透明導電膜およびスパッタリングターゲット |
JP2005135649A (ja) * | 2003-10-28 | 2005-05-26 | Mitsui Mining & Smelting Co Ltd | 酸化インジウム系透明導電膜及びその製造方法 |
JP2005268616A (ja) * | 2004-03-19 | 2005-09-29 | Tosoh Corp | 透明導電膜およびその製造方法 |
JP2007294447A (ja) * | 2006-03-31 | 2007-11-08 | Mitsui Mining & Smelting Co Ltd | 酸化インジウム系透明導電膜及びその製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009044897A1 (ja) * | 2007-10-03 | 2009-04-09 | Mitsui Mining & Smelting Co., Ltd. | 酸化インジウム系透明導電膜及びその製造方法 |
EP2623478A4 (en) * | 2010-09-29 | 2014-03-26 | Tosoh Corp | OXIDE SINTERED BODY AND MANUFACTURING METHOD THEREOF, CATHODIC SPUTTERING TARGET, OXIDE TRANSPARENT ELECTROCONDUCTIVE FILM, AND MANUFACTURING METHOD THEREOF, AND SOLAR BATTERY |
US9399815B2 (en) | 2010-09-29 | 2016-07-26 | Tosoh Corporation | Sintered oxide material, method for manufacturing same, sputtering target, oxide transparent electrically conductive film, method for manufacturing same, and solar cell |
WO2014112414A1 (ja) * | 2013-01-17 | 2014-07-24 | 旭硝子株式会社 | 透光性基板の製造方法、透光性基板、および有機led素子 |
WO2014115770A1 (ja) * | 2013-01-24 | 2014-07-31 | 住友金属鉱山株式会社 | 透明導電性基材ならびにその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20090127357A (ko) | 2009-12-10 |
TW200901228A (en) | 2009-01-01 |
US20110011731A1 (en) | 2011-01-20 |
JPWO2008123420A1 (ja) | 2010-07-15 |
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