WO2008123420A1 - 酸化インジウム系透明導電膜の製造方法 - Google Patents

酸化インジウム系透明導電膜の製造方法 Download PDF

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Publication number
WO2008123420A1
WO2008123420A1 PCT/JP2008/056104 JP2008056104W WO2008123420A1 WO 2008123420 A1 WO2008123420 A1 WO 2008123420A1 JP 2008056104 W JP2008056104 W JP 2008056104W WO 2008123420 A1 WO2008123420 A1 WO 2008123420A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
indium oxide
partial pressure
oxygen partial
predetermined
Prior art date
Application number
PCT/JP2008/056104
Other languages
English (en)
French (fr)
Inventor
Seiichiro Takahashi
Norihiko Miyashita
Original Assignee
Mitsui Mining & Smelting Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co., Ltd. filed Critical Mitsui Mining & Smelting Co., Ltd.
Priority to JP2009509216A priority Critical patent/JPWO2008123420A1/ja
Priority to US12/593,797 priority patent/US20110011731A1/en
Publication of WO2008123420A1 publication Critical patent/WO2008123420A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

　アモルファス膜で弱酸エッチングにより容易にパターニングでき、さらに低抵抗で且つ透過率が高くまたさらに容易に結晶化できる酸化インジウム系透明導電膜の製造方法を提供する。 　酸化インジウムと添加元素とを含有するスパッタリングターゲットについて、所定の成膜温度でアモルファス膜を成膜でき、その後、所定のアニール温度でアニールすることにより前記アモルファス膜を結晶化できることを確認する工程と、前記所定の成膜温度で成膜したアモルファス膜の抵抗率が最も低くなる酸素分圧である最適酸素分圧とは異なり、前記所定のアニール温度でアニールして結晶化させた膜の抵抗率が最も低くなる酸素分圧を求めて成膜酸素分圧とする工程と、この成膜酸素分圧でスパッタリングすることによりアモルファス膜を成膜する工程と、このアモルファス膜を前記所定のアニール温度でアニールすることにより結晶化させて酸化インジウム系透明導電膜とする工程とを具備する。
PCT/JP2008/056104 2007-03-30 2008-03-28 酸化インジウム系透明導電膜の製造方法 WO2008123420A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009509216A JPWO2008123420A1 (ja) 2007-03-30 2008-03-28 酸化インジウム系透明導電膜の製造方法
US12/593,797 US20110011731A1 (en) 2007-03-30 2008-03-28 Process for producing indium oxide-type transparent electroconductive film

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007095782 2007-03-30
JP2007-095782 2007-03-30
JP2007-260437 2007-10-03
JP2007260437 2007-10-03

Publications (1)

Publication Number Publication Date
WO2008123420A1 true WO2008123420A1 (ja) 2008-10-16

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ID=39830905

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056104 WO2008123420A1 (ja) 2007-03-30 2008-03-28 酸化インジウム系透明導電膜の製造方法

Country Status (5)

Country Link
US (1) US20110011731A1 (ja)
JP (1) JPWO2008123420A1 (ja)
KR (1) KR20090127357A (ja)
TW (1) TW200901228A (ja)
WO (1) WO2008123420A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009044897A1 (ja) * 2007-10-03 2009-04-09 Mitsui Mining & Smelting Co., Ltd. 酸化インジウム系透明導電膜及びその製造方法
EP2623478A4 (en) * 2010-09-29 2014-03-26 Tosoh Corp OXIDE SINTERED BODY AND MANUFACTURING METHOD THEREOF, CATHODIC SPUTTERING TARGET, OXIDE TRANSPARENT ELECTROCONDUCTIVE FILM, AND MANUFACTURING METHOD THEREOF, AND SOLAR BATTERY
WO2014112414A1 (ja) * 2013-01-17 2014-07-24 旭硝子株式会社 透光性基板の製造方法、透光性基板、および有機ｌｅｄ素子
WO2014115770A1 (ja) * 2013-01-24 2014-07-31 住友金属鉱山株式会社 透明導電性基材ならびにその製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6270738B2 (ja) * 2012-12-19 2018-01-31 株式会社カネカ 透明電極付き基板およびその製造方法
WO2018047977A1 (ja) * 2016-09-12 2018-03-15 株式会社アルバック 透明導電膜付き基板の製造方法、透明導電膜付き基板の製造装置、及び透明導電膜付き基板

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08167479A (ja) * 1994-12-14 1996-06-25 Toppan Printing Co Ltd 透明導電膜及びその製造方法
JPH08171824A (ja) * 1994-03-27 1996-07-02 Gunze Ltd 透明導電膜の製造方法
JP2000044236A (ja) * 1998-07-24 2000-02-15 Hoya Corp 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2001335918A (ja) * 2000-03-21 2001-12-07 Tsuguo Ishihara Ｉｔｏ透明導電膜の形成方法
JP2002050231A (ja) * 2000-08-04 2002-02-15 Geomatec Co Ltd 透明導電膜およびその製造方法並びにその用途
JP2004339607A (ja) * 2003-04-24 2004-12-02 Tosoh Corp 透明導電膜およびスパッタリングターゲット
JP2005135649A (ja) * 2003-10-28 2005-05-26 Mitsui Mining & Smelting Co Ltd 酸化インジウム系透明導電膜及びその製造方法
JP2005268616A (ja) * 2004-03-19 2005-09-29 Tosoh Corp 透明導電膜およびその製造方法
JP2007294447A (ja) * 2006-03-31 2007-11-08 Mitsui Mining & Smelting Co Ltd 酸化インジウム系透明導電膜及びその製造方法

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Publication number Priority date Publication date Assignee Title
US5264077A (en) * 1989-06-15 1993-11-23 Semiconductor Energy Laboratory Co., Ltd. Method for producing a conductive oxide pattern
KR100505536B1 (ko) * 2002-03-27 2005-08-04 스미토모 긴조쿠 고잔 가부시키가이샤 투명한 도전성 박막, 그것의 제조방법, 그것의 제조를위한 소결 타겟, 디스플레이 패널용의 투명한 전기전도성기재, 및 유기 전기루미네선스 디바이스
US8728285B2 (en) * 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08171824A (ja) * 1994-03-27 1996-07-02 Gunze Ltd 透明導電膜の製造方法
JPH08167479A (ja) * 1994-12-14 1996-06-25 Toppan Printing Co Ltd 透明導電膜及びその製造方法
JP2000044236A (ja) * 1998-07-24 2000-02-15 Hoya Corp 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2001335918A (ja) * 2000-03-21 2001-12-07 Tsuguo Ishihara Ｉｔｏ透明導電膜の形成方法
JP2002050231A (ja) * 2000-08-04 2002-02-15 Geomatec Co Ltd 透明導電膜およびその製造方法並びにその用途
JP2004339607A (ja) * 2003-04-24 2004-12-02 Tosoh Corp 透明導電膜およびスパッタリングターゲット
JP2005135649A (ja) * 2003-10-28 2005-05-26 Mitsui Mining & Smelting Co Ltd 酸化インジウム系透明導電膜及びその製造方法
JP2005268616A (ja) * 2004-03-19 2005-09-29 Tosoh Corp 透明導電膜およびその製造方法
JP2007294447A (ja) * 2006-03-31 2007-11-08 Mitsui Mining & Smelting Co Ltd 酸化インジウム系透明導電膜及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009044897A1 (ja) * 2007-10-03 2009-04-09 Mitsui Mining & Smelting Co., Ltd. 酸化インジウム系透明導電膜及びその製造方法
EP2623478A4 (en) * 2010-09-29 2014-03-26 Tosoh Corp OXIDE SINTERED BODY AND MANUFACTURING METHOD THEREOF, CATHODIC SPUTTERING TARGET, OXIDE TRANSPARENT ELECTROCONDUCTIVE FILM, AND MANUFACTURING METHOD THEREOF, AND SOLAR BATTERY
US9399815B2 (en) 2010-09-29 2016-07-26 Tosoh Corporation Sintered oxide material, method for manufacturing same, sputtering target, oxide transparent electrically conductive film, method for manufacturing same, and solar cell
WO2014112414A1 (ja) * 2013-01-17 2014-07-24 旭硝子株式会社 透光性基板の製造方法、透光性基板、および有機ｌｅｄ素子
WO2014115770A1 (ja) * 2013-01-24 2014-07-31 住友金属鉱山株式会社 透明導電性基材ならびにその製造方法

Also Published As

Publication number Publication date
KR20090127357A (ko) 2009-12-10
TW200901228A (en) 2009-01-01
US20110011731A1 (en) 2011-01-20
JPWO2008123420A1 (ja) 2010-07-15

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