WO2008122204A1 - Liquide de polissage chimico-mecanique pour silicium polycristallin - Google Patents

Liquide de polissage chimico-mecanique pour silicium polycristallin Download PDF

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Publication number
WO2008122204A1
WO2008122204A1 PCT/CN2008/000683 CN2008000683W WO2008122204A1 WO 2008122204 A1 WO2008122204 A1 WO 2008122204A1 CN 2008000683 W CN2008000683 W CN 2008000683W WO 2008122204 A1 WO2008122204 A1 WO 2008122204A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing liquid
liquid according
polyol
polishing
cerium
Prior art date
Application number
PCT/CN2008/000683
Other languages
English (en)
Chinese (zh)
Inventor
Judy Jianfen Jing
Andy Chunxiao Yang
Original Assignee
Anji Microelectronics (Shanghai) Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics (Shanghai) Co., Ltd. filed Critical Anji Microelectronics (Shanghai) Co., Ltd.
Priority to CN2008800113233A priority Critical patent/CN101652445B/zh
Publication of WO2008122204A1 publication Critical patent/WO2008122204A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Definitions

  • the present invention relates to a chemical mechanical polishing liquid, and more particularly to a chemical mechanical polishing liquid for polishing polycrystalline silicon.
  • CMP chemical mechanical polishing
  • polishing During polishing, the wafer and the polishing table/polishing pad rotate while maintaining a downward force on the back side of the wafer, applying an abrasive and a chemically active solution (commonly referred to as a polishing or polishing slurry) to the polishing pad.
  • the polishing solution chemically reacts with the film being polished to begin the polishing process.
  • polishing of polysilicon it is mainly used in two kinds of chips, one is DRAM, and the other is Flash. In the latter application, polishing of silicon dioxide is often involved in the polishing of polysilicon. There are two technical problems in this polishing process:
  • an alkaline slurry using silica as abrasive particles is mainly used to polish the polysilicon layer and the silicon dioxide layer.
  • the removal rate of polysilicon tends to be higher than the removal rate of silicon dioxide. More, it is easy to cause excessive removal of polysilicon to cause depression, which affects the subsequent process.
  • the method of making Flash comprises a polishing liquid for polishing polycrystalline silicon, the polishing crucible comprising at least one compound containing a -N(OH), -NH(OH) or -NH 2 (OH) group, polycrystalline silicon and two using the slurry.
  • the polishing selection ratio of silicon oxide is 50: 1-300: 1, but the selection ratio is still high.
  • a slurry for polysilicon chemical mechanical polishing comprising one or more nonionic surfactants forming a passivation layer on a polysilicon layer. And an amine or imine surfactant for adjusting the relative removal rates of silicon nitride and silicon oxide.
  • the nonionic surfactant is at least one epoxy oxime-epoxypropane block copolymer alcohol and/or epoxy oxime-epoxypropene oxime triblock polymer.
  • the slurry can reduce the depth of depression of the polysilicon.
  • an inorganic base such as KOH or an organic amine such as ammonia water, tetramethylammonium hydroxide (TMAH) or tetrabutylammonium hydroxide (TBAH) is usually used to adjust the pH.
  • TMAH tetramethylammonium hydroxide
  • TBAH tetrabutylammonium hydroxide
  • a slurry for polycrystalline silicon chemical mechanical polishing using a combined pH control agent consisting of KOH, NH4OH, TMA, TMAH and TEA is disclosed in the patent documents US 2005/0130428 A1 and CN 1637102 A.
  • inorganic alkali will introduce metal ion pollution into the slurry, and metal ions have potential hidden dangers to the yield of the chip.
  • Ammonia water is very polluting to the environment. Hydroxylamine compounds inhibit the dielectric such as silicon dioxide under alkaline conditions. Material removal rate. Summary of invention
  • the object of the present invention is to solve the problems of metal ion pollution and environmental pollution caused by the above polysilicon/silicon dioxide selectivity ratio and conventional alkaline pH adjuster, and to provide a suitable polysilicon for polishing polysilicon. /SiO2 selective ratio, and non-polluting chemical mechanical polishing solution.
  • the polishing liquid of the present invention contains a polyol type nonionic surfactant, a terpenoid, and a polishing Granules and water.
  • the polyol-type nonionic surface-active agent is preferably an ester surfactant and/or a polyethylene glycol surfactant which is formed by esterification of a polyol with a fatty acid.
  • the weight percentage of the polyol type nonionic surface active agent is preferably 0.0001 to 20%, more preferably 0.001-10%.
  • the polyol type nonionic surfactant can significantly reduce the removal rate of polysilicon without lowering the removal rate of silicon dioxide, thereby significantly reducing the selection ratio of polysilicon to silicon dioxide, and avoiding polysilicon due to polysilicon. Depression caused by excessive removal.
  • ester surfactant is preferably a polyol fatty acid ester , polyethylene glycol fatty acid ester R 2 COO(CH 2 CH 2 0)pH or R 2 COO(CH 2 CH 2 0) p OCR 2 polyoxyethylene polyol fatty acid ester
  • the polyol is preferably ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, glycerin, polyglycerin, polyoxyethylene glycerol, pentaerythritol, xylitol, polyoxygen Ethylene dehydrated xylitol, sorbitol, polyoxyethylene sorbitol, sorbitan, polyoxyethylene sorbitol, sucrose or polyethylene glycol.
  • said surfactant is polyethylene glycol having a molecular weight of 200 ⁇ 2p000 preferably polyethylene glycol (PEG) 0
  • the hydrazine compound is preferably hydrazine, cesium carbonate, cesium acetate, cesium hydrogen phosphate, cesium hydrochloride, cerium nitrate, cerium sulfate, aminoguanidine, aminoguanidine hydrogencarbonate, aminoguanidine sulfonate. , aminoguanidine nitrate or aminoguanidine hydrochloride.
  • concentration by weight of the quinone compound is preferably from 0.001 to 3%, more preferably from 0.01 to 2%.
  • Terpenoids have a tone in the polishing liquid of the present invention The role of the ratio of polysilicon to silicon dioxide.
  • the higher the content of the terpene compound the higher the selection ratio of polysilicon to silicon dioxide.
  • the degree of regulation of the selectivity of the terpenoids is much less than that of the polyol-type nonionic surfactants, and thus can be used as a finely tuned component.
  • a polishing solution having a suitable polysilicon/silicon dioxide selectivity ratio can be obtained by a simple experiment.
  • terpenoids also have a pH-adjusting effect.
  • the polishing liquid of the present invention does not require the addition of a conventional pH adjusting agent, such as an inorganic base such as KOH or an organic amine such as ammonia water, etc., so that the polishing liquid of the present invention has a low metal ion content and less environmental pollution.
  • a conventional pH adjusting agent such as an inorganic base such as KOH or an organic amine such as ammonia water, etc.
  • the abrasive particles are generally used in the art as abrasive particles, of which silica, alumina, aluminum-doped silica, aluminum-coated silica, ceria, titania and / or polymer abrasive particles.
  • the particle size of the abrasive particles is preferably from 20 to 150 nm.
  • the content of the abrasive particles is preferably from 0.5 to 30% by weight.
  • the polishing liquid of the present invention preferably has a pH of from 8 to 12.
  • the polishing liquid of the present invention may further contain an acidic pH adjuster such as HC1, 3 ⁇ 480 4 and HNO 3 , a viscosity modifier and/or an antifoaming agent, etc., by which characteristics such as pH and viscosity of the polishing liquid are controlled.
  • an acidic pH adjuster such as HC1, 3 ⁇ 480 4 and HNO 3
  • a viscosity modifier and/or an antifoaming agent etc.
  • the polishing liquid of the present invention is obtained by simply mixing and mixing the above components.
  • the positive progress of the present invention is that the polishing liquid of the present invention can better polish a polycrystalline silicon film under alkaline conditions.
  • the polyol type non-ioning surfactant can significantly reduce the removal rate of polysilicon without reducing the removal rate of silicon dioxide, thereby significantly reducing the selection ratio of polysilicon to silicon dioxide;
  • the terpene compound can also be adjusted to make polysilicon;
  • the selection ratio of silicon oxide is selected to obtain a suitable selection ratio, and the quinone compound also has a pH adjusting effect, so that the polishing liquid of the present invention does not need to add a conventional pH adjusting agent (organic amine such as an inorganic base such as hydrazine or the like) , greatly reducing metal ion pollution and environmental pollution. Summary of the invention
  • Table 1 shows the formulations of the polycrystalline chemical mechanical polishing liquids 1 to 6 of the present invention.
  • the polishing liquids of the respective examples were obtained by uniformly mixing the components and their contents in the tables, and the water was the balance.
  • Table 2 shows the formulation and polishing effect data of the comparative polishing liquid 4 and the polishing liquid 7 to 36.
  • the polishing liquids of the respective examples are obtained by uniformly mixing the components and their contents in the table, and the water is the balance.
  • the polishing process parameters were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7 for polishing pad, and Logitech LP50 polishing machine.
  • Polyol type non-ionic surface ⁇ polycrystalline silicon abrasive particles ⁇ compound ⁇ Dioxin active agent / silicon dioxide desiliconized silicon application H silicon content content content specific speed removal example specific substance specific material ratio wt% Wt% wt% quality
  • the polishing liquids 7 to 36 of the present invention significantly reduce the removal rate of polysilicon without lowering the removal rate of silicon dioxide, thereby lowering the selection ratio of polysilicon to silicon dioxide, as compared with the comparative polishing liquid 1. .
  • Table 3 shows the formulation and polishing effect data of the polishing liquids 37 to 40.
  • the polishing liquids of the respective examples were obtained by uniformly mixing the components and the contents thereof in the table, and the water was the balance.
  • polishing process parameters were: 3 psi under pressure, 70 rpm for polishing disc (14 inches in diameter), 80 rpm for polishing head, 200 ml/min for polishing fluid, PPG fast pad CS7 for polishing pad, and Logitech LP50 polishing machine. Polishing solution 37 ⁇ 40 composition and polishing effect
  • Table 4 shows the composition and polishing effect of the comparative polishing liquid 2 ⁇ 4 and the polishing liquid 41. According to the ingredients and their contents in the table, the polishing liquid and the water are used as the balance.
  • the process parameters for polishing were: 3 psi downforce, 70 rpm polishing disc (14 inches diameter), 80 rpm polishing head speed, 200 ml/min polishing fluid flow rate, PPG fast pad CS7 polishing pad, and Logitech LP50 polishing machine.
  • Table 4 compares the composition and polishing effect of the polishing liquid 2 ⁇ 4 and the polishing liquid 41
  • the polishing liquid 41 has a better polishing effect, and is compared with the comparative polishing liquid. -4, reduced metal ion pollution and environmental pollution.
  • the reagents used in the present invention are all commercially available.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne un liquide de polissage chimico-mécanique pour silicium polycristallin, contenant un tensioactif non ionique de type polyol, un composé de guanidine, des particules abrasives et de l'eau. Le liquide de polissage selon l'invention permet de polir un film de silicium polycristallin mieux que dans des conditions de basicité. Le tensioactif non ionique de type polyol peut réduire sensiblement le taux d'élimination de silicium polycristallin sans réduire le taux d'élimination de dioxyde de silicium, ce qui réduit de façon considérable le rapport de sélectivité silicium polycristallin/dioxyde de silicium. Le composé de guanidine peut être utilisé pour ajuster le rapport de sélectivité silicium polycristallin/dioxyde de silicium et il présente simultanément la fonction d'ajustement du pH. Il n'est donc pas nécessaire d'ajouter au liquide de polissage selon l'invention un régulateur de pH commun. Ce liquide de polissage permet également de réduire considérablement la contamination par ions métalliques et la pollution environnementale.
PCT/CN2008/000683 2007-04-06 2008-04-03 Liquide de polissage chimico-mecanique pour silicium polycristallin WO2008122204A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008800113233A CN101652445B (zh) 2007-04-06 2008-04-03 多晶硅化学机械抛光液

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNA2007100392455A CN101280158A (zh) 2007-04-06 2007-04-06 多晶硅化学机械抛光液
CN200710039245.5 2007-04-06

Publications (1)

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WO2008122204A1 true WO2008122204A1 (fr) 2008-10-16

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WO (1) WO2008122204A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102559062A (zh) * 2010-09-20 2012-07-11 罗门哈斯电子材料Cmp控股股份有限公司 稳定的、可浓缩的化学机械抛光组合物和抛光基材的方法

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CN101440258A (zh) * 2007-11-22 2009-05-27 安集微电子（上海）有限公司 一种多晶硅化学机械抛光液
CN101747842B (zh) * 2008-12-19 2014-12-31 安集微电子（上海）有限公司 一种化学机械抛光液
CN101747844B (zh) * 2008-12-19 2014-04-16 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
CN101955852A (zh) * 2009-07-13 2011-01-26 安集微电子（上海）有限公司 一种等离子刻蚀残留物清洗液
CN102101978B (zh) * 2009-12-18 2014-07-23 安集微电子（上海）有限公司 一种化学机械抛光液
CN102101979A (zh) * 2009-12-18 2011-06-22 安集微电子（上海）有限公司 一种化学机械抛光液
CN102108261A (zh) * 2009-12-25 2011-06-29 安集微电子（上海）有限公司 一种化学机械抛光液
JP5774283B2 (ja) * 2010-04-08 2015-09-09 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US20140308155A1 (en) * 2011-11-25 2014-10-16 Fujimi Incorporated Method for polishing alloy material and method for producing alloy material
EP2682440A1 (fr) * 2012-07-06 2014-01-08 Basf Se Composition de polissage mécanique et chimique (cmp) comprenant un tensioactif non ionique et un sel de carbonate
US8980750B2 (en) 2012-07-06 2015-03-17 Basf Se Chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and a carbonate salt
JP6054149B2 (ja) * 2012-11-15 2016-12-27 株式会社フジミインコーポレーテッド 研磨用組成物
CN110295396A (zh) * 2019-07-16 2019-10-01 中国科学院上海硅酸盐研究所 一种复合制绒添加剂及其应用
CN110922897B (zh) * 2019-11-18 2024-03-08 宁波日晟新材料有限公司 一种用于硅化合物的低雾值无损伤抛光液及其制备方法
CN113789126B (zh) * 2021-08-17 2022-07-12 万华化学集团电子材料有限公司 一种硅片化学机械抛光液及其应用
CN115537123B (zh) * 2022-11-09 2023-08-15 博力思(天津)电子科技有限公司 一种聚醚醚酮材料用化学机械抛光液
CN115851136A (zh) * 2022-12-02 2023-03-28 博力思(天津)电子科技有限公司 一种可循环使用的硅片化学机械抛光液

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CN1643660A (zh) * 2002-03-25 2005-07-20 Cmp罗姆和哈斯电子材料控股公司 钽阻挡层去除溶液
CN1650403A (zh) * 2002-04-30 2005-08-03 日立化成工业株式会社 研磨液及研磨方法
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CN1650403A (zh) * 2002-04-30 2005-08-03 日立化成工业株式会社 研磨液及研磨方法
CN1609155A (zh) * 2003-09-17 2005-04-27 Cmp罗姆和哈斯电子材料控股公司 用于半导体晶片的抛光组合物
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102559062A (zh) * 2010-09-20 2012-07-11 罗门哈斯电子材料Cmp控股股份有限公司 稳定的、可浓缩的化学机械抛光组合物和抛光基材的方法

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Publication number Publication date
CN101652445A (zh) 2010-02-17
CN101652445B (zh) 2013-12-11
CN101280158A (zh) 2008-10-08

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