WO2019011251A1 - Liquide de polissage chimico-mécanique - Google Patents

Liquide de polissage chimico-mécanique Download PDF

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Publication number
WO2019011251A1
WO2019011251A1 PCT/CN2018/095199 CN2018095199W WO2019011251A1 WO 2019011251 A1 WO2019011251 A1 WO 2019011251A1 CN 2018095199 W CN2018095199 W CN 2018095199W WO 2019011251 A1 WO2019011251 A1 WO 2019011251A1
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WO
WIPO (PCT)
Prior art keywords
polishing
cerium oxide
mechanical polishing
polishing liquid
chemical mechanical
Prior art date
Application number
PCT/CN2018/095199
Other languages
English (en)
Chinese (zh)
Inventor
李守田
尹先升
贾长征
王雨春
Original Assignee
安集微电子科技（上海）股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子科技（上海）股份有限公司 filed Critical 安集微电子科技（上海）股份有限公司
Publication of WO2019011251A1 publication Critical patent/WO2019011251A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07H—SUGARS; DERIVATIVES THEREOF; NUCLEOSIDES; NUCLEOTIDES; NUCLEIC ACIDS
    • C07H3/00—Compounds containing only hydrogen atoms and saccharide radicals having only carbon, hydrogen, and oxygen atoms
    • C07H3/06—Oligosaccharides, i.e. having three to five saccharide radicals attached to each other by glycosidic linkages
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives

Definitions

  • the invention relates to the field of chemical mechanical polishing liquids, in particular to a chemical mechanical polishing liquid containing ⁇ -cyclodextrin molecules.
  • Cerium oxide is an important CMP polishing fluid abrasive. Compared to conventional silica sol abrasives, cerium oxide is widely used in STI and LID CMP polishing fluids due to its more efficient polishing characteristics. At present, cerium oxide abrasives for CMP polishing are mainly divided into two types: one is a conventional high-temperature calcination synthesis of cerium oxide powder, and the cerium oxide abrasive dispersion prepared by ball-milling dispersion; the other is hydrothermal synthesis preparation. Sol-type nano-cerium oxide abrasive.
  • the two cerium oxide abrasives have different polishing characteristics: the conventional high-temperature calcination cerium oxide abrasive can increase the polishing rate of the silica dielectric layer by adding a compound such as picolinic acid (see literature: Carter et al., Electrochemical and Solid-State Letter (vol 8 (8), page G218-G221, year 2005); and for sol-type cerium oxide, the addition of picolinic acid not only fails to increase the polishing rate of the silica dielectric layer, but instead It will inhibit the polishing activity of cerium oxide (see Case 1).
  • the literature mentions that different cerium oxide preparation methods have different effects on polishing activity and chemical compounds see literature: Srinivasan et al., ECS Journal of Solid State Science and Technology). , 4(11)P5029-P5039(2015))
  • the process has raised lower polishing defect requirements for the CMP polishing process.
  • the cerium oxide abrasive synthesized by the conventional high-temperature baking method has micro-scratches in the CMP polishing process due to the polygonal shape of the particles, it is difficult to meet the CMP polishing requirements of the advanced process.
  • the sol-type cerium oxide abrasive has a nearly round particle morphology and has a good prospect of CMP polishing, which has attracted more and more attention.
  • the cerium oxide abrasive has a high silica polishing rate.
  • the present invention provides a chemical mechanical polishing liquid containing ⁇ -cyclodextrin molecules, which uses cerium oxide as an abrasive to ensure lower polishing defects and at the same time significantly improve the The polishing rate of the silica dielectric material.
  • the chemical mechanical polishing liquid comprises a cerium oxide abrasive, a ⁇ -cyclodextrin molecule, and a pH adjuster.
  • the cerium oxide abrasive comprises a sol type cerium oxide abrasive.
  • the cerium oxide abrasive has a particle size of 30-90 nm.
  • the concentration of the cerium oxide abrasive is 0.05% by weight to 2% by weight.
  • the concentration of the ⁇ -cyclodextrin molecule is from 0.005 wt% to 2 wt%. Preferably, the concentration is from 0.005 wt to 0.1 wt%.
  • the chemical mechanical polishing liquid has a pH of from 3.5 to 5.5.
  • the invention also discloses the application of a chemical mechanical polishing liquid in the surface polishing of a silica medium.
  • the particle size mentioned in the present invention is based on an electron microscope, and the results of the same particle, electron microscope, and light scattering (DLS) are different, as shown in the following table:
  • Table 1 shows the effect of a chemical mechanical polishing solution containing picolinic acid, an ionic electrolyte, and a nonionic electrolyte on the polishing rate of silica.
  • the concentration of picolinic acid is 0.01wt%-0.20wt%
  • the ionic electrolyte is potassium nitrate (KNO 3 ), potassium chloride (KCl), potassium acetate (KAc), tetramethylammonium acetate (TMAAc), four Ammonium methylbutyrate (TBAAc) at a concentration of 0.10% by weight
  • nonionic electrolytes are benzotriazole (BTA), triazole (TAZ), polyethylene glycol (PEG), and ethylene glycol (Ethylene glycol).
  • the corresponding sol type cerium oxide has a concentration of 1% by weight, an average particle diameter of 60 nm, and the pH is adjusted to 4.5 with potassium hydroxide (KOH) or nitric acid (HNO 3 ).
  • KOH potassium hydroxide
  • HNO 3 nitric acid
  • the photo-polishing performance was evaluated by the polishing removal rate of the corresponding TEOS blank wafer. The polishing was performed using the Mirra polishing machine.
  • the corresponding polishing conditions included: IC1010 polishing pad, chassis and polishing head rotation speed of 93 rpm and 87 rpm, pressure 3 psi, polishing
  • the liquid flow rate was 150 mL/min and the polishing time was 60 seconds.
  • the comparative example corresponds to the TEOS polishing rate /min.
  • Comparative Example 1 Comparative Examples 12-23 and the examples that the addition of the nonionic electrolyte also has a certain inhibitory effect on the polishing rate of the sol cerium oxide, but the effect is much smaller than that of the ionic electrolyte.
  • the exception is that the ⁇ -cyclodextrin molecule acts as a non-electrolyte to further promote the polishing rate of the sol.
  • 0.01 wt% of ⁇ -cyclodextrin was added to the polishing liquid, the polishing rate of the sol-type cerium oxide to TEOS was increased by 2%.
  • Table 2 is a further optimization study to adjust the effect of the amount of ⁇ -cyclodextrin added and the molecular weight on the polishing rate of sol.
  • the improvement level of the polishing rate of the sol is increased by ⁇ -cyclodextrin.
  • the polishing performance of the polishing solution was evaluated by the polishing removal rate of the corresponding TEOS blank wafer. The polishing was performed using the Mirra polishing machine.
  • the corresponding polishing conditions included: IC1010 polishing pad, chassis and polishing head rotation speed of 93 rpm and 87 rpm, pressure 3 psi, polishing
  • the liquid flow rate was 150 mL/min and the polishing time was 60 seconds.
  • Table 3 shows the formulation components of the prepared polishing liquid, corresponding to a sol-type cerium oxide concentration of 1 wt%, an average particle diameter of 60 nm, and the pH was adjusted to 4.5 with potassium hydroxide (KOH) or nitric acid (HNO 3 ), and no ionic form was added.
  • the formulation component of the electrolyte corresponds to the TEOS polishing rate. /min.
  • Example 7 it can be seen from Example 7 that when the content of ⁇ -cyclodextrin reaches 0.500% by weight, the polishing rate of the sol-type cerium oxide abrasive in the polishing liquid to TEOS starts to decrease, which is 2% higher than that of the unadded polishing liquid.
  • Table 3 shows the effect of adding ⁇ -cyclodextrin to the polishing solution under different cerium oxide concentration, particle size and pH value on the polishing rate of TEOS. It can be seen from Table 3 that when the particle size of cerium oxide is 30-90 nm, the concentration of cerium oxide is 0.05-2% by weight, and the pH of the polishing liquid is 3.5-5.5, the addition of a certain amount of ⁇ -cyclodextrin can significantly improve polishing. The polishing rate of the liquid to TEOS. The addition of ⁇ -cyclodextrin can promote the polishing performance of cerium oxide to some extent under different pH and solid content of cerium oxide abrasive.
  • the chemical mechanical polishing liquid provided by the invention uses sol-type cerium oxide as an abrasive, and after adding ⁇ -cyclodextrin molecules, can be used to significantly improve the polishing of the silica dielectric material by the sol-type cerium oxide abrasive.
  • the rate provides an optimized solution to the polishing rate problem of sol-type cerium oxide.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Biotechnology (AREA)
  • General Health & Medical Sciences (AREA)
  • Genetics & Genomics (AREA)
  • Molecular Biology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un liquide de polissage chimico-mécanique, ledit liquide de polissage chimico-mécanique comprenant un abrasif à base d'oxyde de cérium, un oligosaccharide et un régulateur de pH. L'invention concerne en outre l'utilisation du liquide de polissage chimico-mécanique préparé à l'aide de la formule décrite pour polir la surface d'un support en silice. L'utilisation du liquide de polissage chimico-mécanique préparé à l'aide de la formule décrite peut accélérer significativement la vitesse de polissage, par l'abrasif à base d'oxyde de cérium, d'un matériau formé d'un support en silice, tout en permettant de conserver un faible taux de défauts.
PCT/CN2018/095199 2017-07-13 2018-07-10 Liquide de polissage chimico-mécanique WO2019011251A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710570204.2 2017-07-13
CN201710570204.2A CN109251678A (zh) 2017-07-13 2017-07-13 一种化学机械抛光液

Publications (1)

Publication Number Publication Date
WO2019011251A1 true WO2019011251A1 (fr) 2019-01-17

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CN (1) CN109251678A (fr)
TW (1) TW201908432A (fr)
WO (1) WO2019011251A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI767355B (zh) * 2019-10-24 2022-06-11 美商慧盛材料美國責任有限公司 高氧化物移除速率的淺溝隔離化學機械平坦化組合物、系統及方法
CN114621682A (zh) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
CN113201284B (zh) * 2021-04-24 2022-03-11 深圳市撒比斯科技有限公司 一种高抛光度cmp抛光液及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120077419A1 (en) * 2009-06-05 2012-03-29 Basf Se Raspberry-type metal oxide nanostructures coated with ceo2 nanoparticles for chemical mechanical planarization (cmp)
CN103666276A (zh) * 2012-09-25 2014-03-26 安集微电子（上海）有限公司 一种化学机械抛光液
WO2014047014A1 (fr) * 2012-09-21 2014-03-27 3M Innovative Properties Company Incorporation d'additifs dans des bandes abrasives fixes pour de meilleures performances cmp
CN105800660A (zh) * 2014-12-29 2016-07-27 安集微电子科技(上海)有限公司 一种氧化铈制备方法及含有该氧化铈磨料的cmp抛光液

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102757081B (zh) * 2012-07-25 2014-08-06 西安交通大学 一种以聚乙烯醇分散的二氧化铈水溶胶合成方法
CN104745092A (zh) * 2013-12-26 2015-07-01 安集微电子（上海）有限公司 一种应用于sti领域的化学机械抛光液及其使用方法
CN105802506B (zh) * 2014-12-29 2020-06-09 安集微电子（上海）有限公司 一种化学机械抛光液
KR101996663B1 (ko) * 2016-12-08 2019-07-04 주식회사 케이씨텍 텅스텐막에 대한 산화막의 고선택비 슬러리 조성물

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120077419A1 (en) * 2009-06-05 2012-03-29 Basf Se Raspberry-type metal oxide nanostructures coated with ceo2 nanoparticles for chemical mechanical planarization (cmp)
WO2014047014A1 (fr) * 2012-09-21 2014-03-27 3M Innovative Properties Company Incorporation d'additifs dans des bandes abrasives fixes pour de meilleures performances cmp
CN103666276A (zh) * 2012-09-25 2014-03-26 安集微电子（上海）有限公司 一种化学机械抛光液
CN105800660A (zh) * 2014-12-29 2016-07-27 安集微电子科技(上海)有限公司 一种氧化铈制备方法及含有该氧化铈磨料的cmp抛光液

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CN109251678A (zh) 2019-01-22
TW201908432A (zh) 2019-03-01

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