WO2008108299A1 - 窒化物半導体素子および窒化物半導体素子の製造方法 - Google Patents

窒化物半導体素子および窒化物半導体素子の製造方法 Download PDF

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Publication number
WO2008108299A1
WO2008108299A1 PCT/JP2008/053666 JP2008053666W WO2008108299A1 WO 2008108299 A1 WO2008108299 A1 WO 2008108299A1 JP 2008053666 W JP2008053666 W JP 2008053666W WO 2008108299 A1 WO2008108299 A1 WO 2008108299A1
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Prior art keywords
nitride semiconductor
layer
semiconductor device
wall surface
insulating film
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PCT/JP2008/053666
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English (en)
French (fr)
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Hirotaka Otake
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Rohm Co., Ltd.
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    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

　本発明の窒化物半導体素子は、III族窒化物半導体からなる、ｎ型の第１層、この第１層に積層されたｐ型不純物を含む第２層、およびこの第２層に積層されたｎ型の第３層を備え、前記第１、第２および第３層に跨る壁面を有する窒化物半導体積層構造部と、 　前記壁面およびこの壁面に連続する前記第１層の露出面に、前記第１、第２および第３層に跨るように、かつ、前記壁面に接する第１部分より前記第１層の露出面に接する第２部分が厚くなるように、形成されたゲート絶縁膜と、 　前記ゲート絶縁膜を挟んで前記第２層における前記壁面に対向するように形成されたゲート電極と、を含む。
PCT/JP2008/053666 2007-03-06 2008-02-29 窒化物半導体素子および窒化物半導体素子の製造方法 WO2008108299A1 (ja)

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JP2007-056428 2007-03-06
JP2007056428A JP2008218846A (ja) 2007-03-06 2007-03-06 窒化物半導体素子および窒化物半導体素子の製造方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021078450A1 (de) * 2019-10-21 2021-04-29 Robert Bosch Gmbh Vertikaler feldeffekttransistor und verfahren zum ausbilden desselben
EP3761374A4 (en) * 2018-03-01 2021-11-17 Tamura Corporation TRENCH-MOS-SCHOTTKY DIODE AND MANUFACTURING PROCESS FOR IT

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311489A (ja) * 2007-06-15 2008-12-25 Rohm Co Ltd 窒化物半導体素子および窒化物半導体素子の製造方法
DE102009018054B4 (de) * 2009-04-21 2018-11-29 Infineon Technologies Austria Ag Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT
JP2012169470A (ja) * 2011-02-15 2012-09-06 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JP6693142B2 (ja) * 2016-01-21 2020-05-13 ソニー株式会社 半導体装置、電子部品、電子機器、および半導体装置の製造方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3761374A4 (en) * 2018-03-01 2021-11-17 Tamura Corporation TRENCH-MOS-SCHOTTKY DIODE AND MANUFACTURING PROCESS FOR IT
US11456388B2 (en) 2018-03-01 2022-09-27 Tamura Corporation Trench MOS schottky diode and method for producing same
WO2021078450A1 (de) * 2019-10-21 2021-04-29 Robert Bosch Gmbh Vertikaler feldeffekttransistor und verfahren zum ausbilden desselben
JP2022553305A (ja) * 2019-10-21 2022-12-22 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 縦型電界効果トランジスタとその形成方法
JP7397978B2 (ja) 2019-10-21 2023-12-13 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 縦型電界効果トランジスタとその形成方法

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