JP7397978B2 - 縦型電界効果トランジスタとその形成方法 - Google Patents
縦型電界効果トランジスタとその形成方法 Download PDFInfo
- Publication number
- JP7397978B2 JP7397978B2 JP2022523405A JP2022523405A JP7397978B2 JP 7397978 B2 JP7397978 B2 JP 7397978B2 JP 2022523405 A JP2022523405 A JP 2022523405A JP 2022523405 A JP2022523405 A JP 2022523405A JP 7397978 B2 JP7397978 B2 JP 7397978B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor fin
- field effect
- confinement structure
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005669 field effect Effects 0.000 title claims description 56
- 238000000034 method Methods 0.000 title claims description 19
- 230000015572 biosynthetic process Effects 0.000 title description 5
- 239000004065 semiconductor Substances 0.000 claims description 101
- 239000000758 substrate Substances 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 238000002513 implantation Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7856—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with an non-uniform gate, e.g. varying doping structure, shape or composition on different sides of the fin, or different gate insulator thickness or composition on opposing fin sides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41791—Source or drain electrodes for field effect devices for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
Claims (10)
- 第1の導電型を有するドリフト領域(204)と、
前記ドリフト領域(204)上またはその上方にある半導体フィン(206)と、
前記半導体フィン(206)上またはその上方にあるソースまたはドレイン電極(214、216)と
を備える縦型電界効果トランジスタ(200、300、400、500、600、700)であって、
前記半導体フィン(206)が、前記ソースまたはドレイン電極(214、216)を前記ドリフト領域(204)に導通可能に接続する導通可能領域(208)と、導通可能領域(208)の横方向の隣に構成され、前記ソースまたはドレイン電極(214、216)から前記ドリフト領域(204)に向かって延びる閉じ込め構造(210)とを備え、前記閉じ込め構造(210)が、前記半導体フィン(206)内の前記縦型電界効果トランジスタの導電性チャネルを、前記導通可能領域(208)の領域に閉じ込めるように設計され、
前記閉じ込め構造(210)が、前記半導体フィン(206)の少なくとも1つの側壁の隣に構成されたゲート電極(212)の横方向の隣に配置された第1の区域(404)において、前記ゲート電極(212)の前記横方向の隣以外の区域である第2の区域におけるものよりも大きい横方向の広がりを有し、それにより、前記導通可能領域は、前記閉じ込め構造(210)の前記第1の区域(404)に対応する前記半導体フィン(206)の領域において狭窄部分(402)を有する、縦型電界効果トランジスタ(200、300、400、500、600、700)。 - 前記閉じ込め構造(210)が、前記ドリフト領域(204)内まで延びる、請求項1に記載の縦型電界効果トランジスタ(200、300、400、500、600、700)。
- 前記閉じ込め構造(210)が、前記第1の導電型とは反対の第2の導電型を有する、請求項1または2に記載の縦型電界効果トランジスタ(200、300、400、500、600、700)。
- 前記閉じ込め構造(210)が非導電性である、請求項1または2に記載の縦型電界効果トランジスタ(200、300、400、500、600、700)。
- 前記閉じ込め構造(210)が、前記ドリフト領域(204)に配置され、横方向において前記ゲート電極(212)の方向に延びる領域を備える、請求項1から4のいずれか1項に記載の縦型電界効果トランジスタ(200、300、400、500、600、700)。
- 前記ドリフト領域(204)がn型であり、前記閉じ込め構造(210)が少なくとも1つのp型領域を有する、
請求項1から4のいずれか1項に記載の縦型電界効果トランジスタ(200、300、400、500、600、700)。 - 前記閉じ込め構造(210)が、前記導通可能領域(208)によって横方向において完全に囲まれている、請求項1から6のいずれか1項に記載の縦型電界効果トランジスタ(200、300、400、500、600、700)。
- 前記閉じ込め構造(210)と前記導通可能領域とが同軸形状に形成される、請求項1から7のいずれか1項に記載の縦型電界効果トランジスタ(200、300、400、500、600、700)。
- 前記閉じ込め構造(210)が、前記半導体フィン(206)の少なくとも1つの側壁に形成される、請求項1から8のいずれか1項に記載の縦型電界効果トランジスタ(200、300、400、500、600、700)。
- 縦型電界効果トランジスタを形成するための方法であって、
第1の導電型を有するドリフト領域(204)を形成するステップと、
前記ドリフト領域(204)上またはその上方に半導体フィン(206)を形成するステップと、
前記半導体フィン(206)上またはその上方にソースまたはドレイン電極(214、216)を形成するステップと
を含み、
前記半導体フィン(206)が、前記ソースまたはドレイン電極(214、216)を前記ドリフト領域(204)に導通可能に接続する導通可能領域(208)と、導通可能領域(208)の横方向の隣に構成され、前記ソースまたはドレイン電極(214、216)から前記ドリフト領域(204)に向かって延びる閉じ込め構造(210)とを備え、前記閉じ込め構造(210)が、前記半導体フィン(206)内の前記縦型電界効果トランジスタの導電性チャネルを、前記導通可能領域(208)の領域に閉じ込めるように設計され、
前記閉じ込め構造(210)が、前記半導体フィン(206)の少なくとも1つの側壁の隣に構成されたゲート電極(212)の横方向の隣に配置された第1の区域(404)において、前記ゲート電極(212)の前記横方向の隣以外の区域である第2の区域におけるものよりも大きい横方向の広がりを有するように形成され、それにより、前記導通可能領域は、前記閉じ込め構造(210)の前記第1の区域(404)に対応する前記半導体フィン(206)の領域において狭窄部分(402)が形成される、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102019216142.1 | 2019-10-21 | ||
DE102019216142.1A DE102019216142A1 (de) | 2019-10-21 | 2019-10-21 | Vertikaler Feldeffekttransistor und Verfahren zum Ausbilden desselben |
PCT/EP2020/076286 WO2021078450A1 (de) | 2019-10-21 | 2020-09-21 | Vertikaler feldeffekttransistor und verfahren zum ausbilden desselben |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022553305A JP2022553305A (ja) | 2022-12-22 |
JP7397978B2 true JP7397978B2 (ja) | 2023-12-13 |
Family
ID=72615855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022523405A Active JP7397978B2 (ja) | 2019-10-21 | 2020-09-21 | 縦型電界効果トランジスタとその形成方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20240055528A1 (ja) |
EP (1) | EP4049318A1 (ja) |
JP (1) | JP7397978B2 (ja) |
CN (1) | CN114586174A (ja) |
DE (1) | DE102019216142A1 (ja) |
WO (1) | WO2021078450A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006086548A (ja) | 2005-12-12 | 2006-03-30 | Nissan Motor Co Ltd | 電界効果トランジスタ |
WO2008108299A1 (ja) | 2007-03-06 | 2008-09-12 | Rohm Co., Ltd. | 窒化物半導体素子および窒化物半導体素子の製造方法 |
JP2008306095A (ja) | 2007-06-11 | 2008-12-18 | Rohm Co Ltd | 半導体装置 |
WO2019103698A1 (en) | 2017-11-24 | 2019-05-31 | Elektrotechnický Ústav Sav | Vertical gan transistor with insulating channel and the method of forming the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69602114T2 (de) * | 1995-02-10 | 1999-08-19 | Siliconix Inc | Graben-Feldeffekttransistor mit PN-Verarmungsschicht-Barriere |
KR20140063703A (ko) * | 2011-08-17 | 2014-05-27 | 램고스, 인크. | 산화물 반도체 기판 상의 수직 전계 효과 트랜지스터 및 그 제조 방법 |
-
2019
- 2019-10-21 DE DE102019216142.1A patent/DE102019216142A1/de active Pending
-
2020
- 2020-09-21 US US17/766,319 patent/US20240055528A1/en active Pending
- 2020-09-21 WO PCT/EP2020/076286 patent/WO2021078450A1/de active Application Filing
- 2020-09-21 EP EP20776121.4A patent/EP4049318A1/de active Pending
- 2020-09-21 CN CN202080073952.XA patent/CN114586174A/zh active Pending
- 2020-09-21 JP JP2022523405A patent/JP7397978B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006086548A (ja) | 2005-12-12 | 2006-03-30 | Nissan Motor Co Ltd | 電界効果トランジスタ |
WO2008108299A1 (ja) | 2007-03-06 | 2008-09-12 | Rohm Co., Ltd. | 窒化物半導体素子および窒化物半導体素子の製造方法 |
JP2008306095A (ja) | 2007-06-11 | 2008-12-18 | Rohm Co Ltd | 半導体装置 |
WO2019103698A1 (en) | 2017-11-24 | 2019-05-31 | Elektrotechnický Ústav Sav | Vertical gan transistor with insulating channel and the method of forming the same |
Also Published As
Publication number | Publication date |
---|---|
WO2021078450A1 (de) | 2021-04-29 |
DE102019216142A1 (de) | 2021-04-22 |
JP2022553305A (ja) | 2022-12-22 |
US20240055528A1 (en) | 2024-02-15 |
CN114586174A (zh) | 2022-06-03 |
EP4049318A1 (de) | 2022-08-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9214526B2 (en) | Semiconductor device | |
JP2005510059A (ja) | 電界効果トランジスタ半導体デバイス | |
JP5872281B2 (ja) | ダイオードを含む半導体装置 | |
CN104247026A (zh) | 碳化硅半导体装置及其制造方法 | |
CN104465767B (zh) | 半导体器件、集成电路及半导体器件的制造方法 | |
CN113196500B (zh) | 半导体装置及其制造方法 | |
CN106057898B (zh) | 包括晶体管的半导体器件 | |
TWI595649B (zh) | Semiconductor device | |
JP7371271B2 (ja) | 縦型フィン電界効果トランジスタ、縦型フィン電界効果トランジスタ装置、および縦型フィン電界効果トランジスタの形成方法 | |
JP2023162328A (ja) | 縦型電界効果トランジスタおよびその形成のための方法 | |
JP7397978B2 (ja) | 縦型電界効果トランジスタとその形成方法 | |
CN104600067B (zh) | 集成电路和制造集成电路的方法 | |
JP7471403B2 (ja) | 縦型電界効果トランジスタおよびその形成方法 | |
JP2014011418A (ja) | 半導体装置およびその製造方法 | |
US20220285542A1 (en) | Vertical field-effect transistor and method for forming same | |
JP2008523586A (ja) | 絶縁ゲート電界効果トランジスタ | |
CN115136320A (zh) | 垂直场效应晶体管、用于制造其的方法以及具有垂直场效应晶体管的构件 | |
US11164964B2 (en) | Power semiconductor device and method of fabricating the same | |
US9661707B2 (en) | Method for manufacturing a semiconductor device using tilted ion implantation processes, semiconductor device and integrated circuit | |
JP7383168B2 (ja) | 縦型電界効果トランジスタおよびその形成方法 | |
JP2020126932A (ja) | トレンチゲート型半導体装置 | |
JP7111061B2 (ja) | スイッチング素子 | |
US11257915B2 (en) | Semiconductor element having an enhancement-type transistor structure | |
US20240128372A1 (en) | Method for manufacturing a vertical field effect transistor structure and corresponding vertical field effect transistor structure | |
US11869982B2 (en) | Single sided channel mesa power junction field effect transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220420 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230525 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230601 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230831 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231110 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231201 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7397978 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |