WO2008078529A1 - 試験装置および試験方法 - Google Patents

試験装置および試験方法 Download PDF

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Publication number
WO2008078529A1
WO2008078529A1 PCT/JP2007/073601 JP2007073601W WO2008078529A1 WO 2008078529 A1 WO2008078529 A1 WO 2008078529A1 JP 2007073601 W JP2007073601 W JP 2007073601W WO 2008078529 A1 WO2008078529 A1 WO 2008078529A1
Authority
WO
WIPO (PCT)
Prior art keywords
failure
test
sequence
test equipment
block
Prior art date
Application number
PCT/JP2007/073601
Other languages
English (en)
French (fr)
Inventor
Satoshi Kameda
Masaru Doi
Shinya Sato
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Priority to JP2008551019A priority Critical patent/JP5100663B2/ja
Priority to KR1020097015591A priority patent/KR101095639B1/ko
Publication of WO2008078529A1 publication Critical patent/WO2008078529A1/ja
Priority to US12/487,615 priority patent/US7945826B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/16—Protection against loss of memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G11C29/56008—Error analysis, representation of errors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G11C2029/5606—Error catch memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Test And Diagnosis Of Digital Computers (AREA)

Abstract

　本発明に係る試験装置は、被試験メモリの各ブロックに対応付けて、当該ブロックに不良が発生したか否かをそれぞれ示す複数のフェイル情報を記憶する不良ブロックメモリを有する。そして、被試験メモリの試験対象のページに、試験用のデータ列を書き込み、試験対象のページに書き込まれた試験用のデータ列を読み出し、読み出されたデータ列を、書き込まれたデータ列と比較する。試験装置は、また、複数のフェイル情報のそれぞれに対し、試験対象のページに不良が発生したか否かを判定する複数のフェイル条件のいずれを割り当てるかを設定する割当情報を記憶する割当レジスタを有する。そして、複数のフェイル条件のそれぞれに対応する不良が発生したか否かを検出し、検出結果をフェイル信号として出力し、試験対象のページを含むブロックに対応付けられた複数のフェイル情報のそれぞれを、割り当てられたフェイル条件に応じたフェイル信号により更新する。
PCT/JP2007/073601 2006-12-26 2007-12-06 試験装置および試験方法 WO2008078529A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008551019A JP5100663B2 (ja) 2006-12-26 2007-12-06 試験装置および試験方法
KR1020097015591A KR101095639B1 (ko) 2006-12-26 2007-12-06 시험 장치 및 시험 방법
US12/487,615 US7945826B2 (en) 2006-12-26 2009-06-18 Test apparatus and test method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-350625 2006-12-26
JP2006350625 2006-12-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/487,615 Continuation US7945826B2 (en) 2006-12-26 2009-06-18 Test apparatus and test method

Publications (1)

Publication Number Publication Date
WO2008078529A1 true WO2008078529A1 (ja) 2008-07-03

Family

ID=39562323

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/073601 WO2008078529A1 (ja) 2006-12-26 2007-12-06 試験装置および試験方法

Country Status (5)

Country Link
US (1) US7945826B2 (ja)
JP (1) JP5100663B2 (ja)
KR (1) KR101095639B1 (ja)
TW (1) TWI353607B (ja)
WO (1) WO2008078529A1 (ja)

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Publication number Priority date Publication date Assignee Title
JP2010033626A (ja) * 2008-07-25 2010-02-12 Renesas Technology Corp 半導体装置
KR20150057155A (ko) * 2013-11-18 2015-05-28 삼성전자주식회사 메모리 시스템 및 그에 따른 반도체 메모리의 결함 메모리 셀 관리방법
CN111798915A (zh) * 2019-04-02 2020-10-20 爱思开海力士有限公司 存储器***及其操作方法
CN116340191A (zh) * 2023-05-31 2023-06-27 合肥康芯威存储技术有限公司 一种存储器固件的测试方法、装置、设备及介质

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JP2009272028A (ja) * 2008-04-07 2009-11-19 Renesas Technology Corp 半導体集積回路およびその動作方法
TW200947450A (en) * 2008-05-09 2009-11-16 A Data Technology Co Ltd Storage system capable of data recovery and method thereof
TWI395226B (zh) * 2008-11-07 2013-05-01 Silicon Motion Inc 測試儲存裝置的方法及其系統
KR20100115970A (ko) * 2009-04-21 2010-10-29 삼성전자주식회사 배드 셀 관리 방법과 그 장치
US8683456B2 (en) * 2009-07-13 2014-03-25 Apple Inc. Test partitioning for a non-volatile memory
US8650446B2 (en) * 2010-03-24 2014-02-11 Apple Inc. Management of a non-volatile memory based on test quality
US8645776B2 (en) * 2010-03-24 2014-02-04 Apple Inc. Run-time testing of memory locations in a non-volatile memory
US8411519B2 (en) * 2010-06-04 2013-04-02 Apple Inc. Selective retirement of blocks
US8751903B2 (en) 2010-07-26 2014-06-10 Apple Inc. Methods and systems for monitoring write operations of non-volatile memory
TWI459393B (zh) * 2011-01-19 2014-11-01 Phison Electronics Corp 用於非揮發性記憶體的資料寫入方法、控制器與儲存裝置
KR20150029402A (ko) 2013-09-10 2015-03-18 에스케이하이닉스 주식회사 데이터 저장 시스템 및 그것의 동작 방법
KR102070729B1 (ko) 2013-11-12 2020-03-02 삼성전자주식회사 반도체 메모리 장치 및 그것을 포함하는 메모리 시스템
CN106909318B (zh) * 2013-12-23 2020-05-08 华为技术有限公司 固态硬盘使用方法及装置
US10593421B2 (en) * 2015-12-01 2020-03-17 Cnex Labs, Inc. Method and apparatus for logically removing defective pages in non-volatile memory storage device
TWI601148B (zh) * 2016-05-05 2017-10-01 慧榮科技股份有限公司 損壞資料行的篩選方法與具有損壞資料行總表的資料儲存裝置
CN112309481B (zh) * 2019-08-02 2024-07-16 神讯电脑(昆山)有限公司 Eeprom读写检测***及其方法
US11397635B2 (en) * 2019-12-09 2022-07-26 Sandisk Technologies Llc Block quality classification at testing for non-volatile memory, and multiple bad block flags for product diversity

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JPH08315597A (ja) * 1995-05-17 1996-11-29 Hitachi Electron Eng Co Ltd Ｉｃ試験装置
JPH10312340A (ja) * 1997-05-12 1998-11-24 Kofu Nippon Denki Kk 半導体記憶装置におけるエラー検出，訂正方式
JP2002140899A (ja) * 2000-11-01 2002-05-17 Toshiba Corp 半導体記憶装置
JP2003178600A (ja) * 2001-12-11 2003-06-27 Toshiba Corp 半導体集積回路
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JP2004220068A (ja) * 2003-01-09 2004-08-05 Matsushita Electric Ind Co Ltd メモリカード及びメモリへのデータ書き込み方法
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JP3842238B2 (ja) * 2002-04-30 2006-11-08 インターナショナル・ビジネス・マシーンズ・コーポレーション メモリ・システム及びこれのテスト方法

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Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
JPH08315597A (ja) * 1995-05-17 1996-11-29 Hitachi Electron Eng Co Ltd Ｉｃ試験装置
JPH10312340A (ja) * 1997-05-12 1998-11-24 Kofu Nippon Denki Kk 半導体記憶装置におけるエラー検出，訂正方式
JP3490403B2 (ja) * 2000-03-14 2004-01-26 インターナショナル・ビジネス・マシーンズ・コーポレーション クロック周波数を設定する方法
JP2002140899A (ja) * 2000-11-01 2002-05-17 Toshiba Corp 半導体記憶装置
JP2003178600A (ja) * 2001-12-11 2003-06-27 Toshiba Corp 半導体集積回路
JP3842238B2 (ja) * 2002-04-30 2006-11-08 インターナショナル・ビジネス・マシーンズ・コーポレーション メモリ・システム及びこれのテスト方法
JP2004220068A (ja) * 2003-01-09 2004-08-05 Matsushita Electric Ind Co Ltd メモリカード及びメモリへのデータ書き込み方法
JP2006139892A (ja) * 2004-11-15 2006-06-01 Advantest Corp 試験装置及び試験方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010033626A (ja) * 2008-07-25 2010-02-12 Renesas Technology Corp 半導体装置
KR20150057155A (ko) * 2013-11-18 2015-05-28 삼성전자주식회사 메모리 시스템 및 그에 따른 반도체 메모리의 결함 메모리 셀 관리방법
KR102116364B1 (ko) * 2013-11-18 2020-05-28 삼성전자주식회사 메모리 시스템 및 그에 따른 반도체 메모리의 결함 메모리 셀 관리방법
CN111798915A (zh) * 2019-04-02 2020-10-20 爱思开海力士有限公司 存储器***及其操作方法
CN111798915B (zh) * 2019-04-02 2023-09-15 爱思开海力士有限公司 存储器***及其操作方法
CN116340191A (zh) * 2023-05-31 2023-06-27 合肥康芯威存储技术有限公司 一种存储器固件的测试方法、装置、设备及介质
CN116340191B (zh) * 2023-05-31 2023-08-08 合肥康芯威存储技术有限公司 一种存储器固件的测试方法、装置、设备及介质

Also Published As

Publication number Publication date
US7945826B2 (en) 2011-05-17
TW200839777A (en) 2008-10-01
US20090327822A1 (en) 2009-12-31
TWI353607B (en) 2011-12-01
KR101095639B1 (ko) 2011-12-19
JP5100663B2 (ja) 2012-12-19
JPWO2008078529A1 (ja) 2010-04-22
KR20090103923A (ko) 2009-10-01

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