WO2008069243A1 - Source d'électrons à cathode froide, procédé de fabrication associé, et élément d'émission de lumière utilisant celle-ci - Google Patents

Source d'électrons à cathode froide, procédé de fabrication associé, et élément d'émission de lumière utilisant celle-ci Download PDF

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Publication number
WO2008069243A1
WO2008069243A1 PCT/JP2007/073507 JP2007073507W WO2008069243A1 WO 2008069243 A1 WO2008069243 A1 WO 2008069243A1 JP 2007073507 W JP2007073507 W JP 2007073507W WO 2008069243 A1 WO2008069243 A1 WO 2008069243A1
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Prior art keywords
cold cathode
electron source
cathode electron
source according
metal oxide
Prior art date
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PCT/JP2007/073507
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English (en)
Japanese (ja)
Inventor
Mikio Takai
Chieko Fukuyama
Yoichi Takaoka
Yoshimasa Kumashiro
Tadahiko Takimoto
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Ishihara Sangyo Kaisha, Ltd.
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Priority to JP2008548314A priority Critical patent/JPWO2008069243A1/ja
Publication of WO2008069243A1 publication Critical patent/WO2008069243A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/04—Cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30426—Coatings on the emitter surface, e.g. with low work function materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material

Definitions

  • the present invention relates to a field emission flat panel display (FED), a field emission lamp (FE), FE
  • the present invention relates to a cold cathode electron source incorporated in a device utilizing a light emission phenomenon caused by electron beam excitation such as U.
  • LCDs liquid crystal displays
  • PDPs plasma displays
  • FEDs Field emission flat panel displays
  • Mo, carbon / PdO or carbon nanotubes (CNT) are mainly considered as the emitter materials used for the cold cathode electron source of FED, and various studies have been made!
  • fluorescent lamps which are the most common lighting fixtures at present, use ultraviolet rays generated from mercury as the excitation source of the phosphor, and there is a need for alternatives due to environmental load problems caused by mercury.
  • White LEDs are expected as a candidate for replacement of fluorescent lamps in terms of low power consumption, durability, and luminous efficiency.
  • the size of the LED elements is as small as several millimeters at most, so it has a large area like indoor lighting. In order to obtain this light emission, it is inevitable that the cost will be higher than using a large number of LEDs side by side.
  • LED phosphors have few variations of highly efficient phosphors, and it is difficult to obtain a wide spectrum over the entire visible range, which is ideal for white.
  • FED field emission lamp
  • FEU field emission lamp
  • FEL is inferior to LED in terms of power consumption, durability, and luminous efficiency.
  • it is easy to increase the area of the phosphor screen and the emitter array, making it suitable for surface emission, and for the emission color, a good white color is achieved by combining many electron beam-excited phosphors. Is expected to do.
  • the emitter material of the cold cathode electron source used above it is generally known that a material in which high electric field concentration occurs in the field emission portion, that is, a material having a high aspect ratio is suitable.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2000-203998
  • metal oxides such as titanium oxide do not have electrical conductivity, and therefore good emission characteristics cannot always be expected even with a high aspect ratio.
  • metal oxides can be manufactured at a lower cost than the above CNTs, so if this can be used as an emitter material, these devices can be used for cold cathode electron sources used in FEDs and FELs. It can be provided at low cost. That is, an object of the present invention is to provide a cold cathode electron source using a metal oxide as an emitter material.
  • the inventors of the present invention have made various studies to improve the characteristics of the metal oxide emitter material used for the cold cathode electron source. As a result, the activated metal oxide was used for the electron emission portion. The present inventors have found that the cold cathode electron source has excellent emission characteristics and completed the present invention.
  • the present invention provides a cold cathode electron source having a force sword electrode and an electron emission portion formed thereon, and uses a metal oxide activated in the electron emission portion. It is a cathode electron source.
  • the present invention also provides a method of manufacturing a cold cathode electron source as described above, wherein an activation process is performed on an electron emission portion including a metal oxide formed on a force sword electrode. It is a manufacturing method.
  • the present invention relates to FED and FEL using the cold cathode electron source.
  • the cold cathode electron source of the present invention is capable of reducing the emission starting electric field and obtaining a sufficient emission current. Furthermore, it is useful as an FED emitter material because it can use metal oxide powder that is less expensive than CNT. It is particularly useful as a required FEL emitter material.
  • the present invention provides a cold cathode electron source having a force sword electrode and an electron emission portion formed thereon, and uses a metal oxide activated in the electron emission portion. It is a cathode electron source. If only a metal oxide is used for the electron emission part, the emission phenomenon hardly occurs and it is difficult to obtain a sufficient emission current.
  • the field electron emission phenomenon can be confirmed with a low applied voltage by using an activated metal oxide for the electron emission portion.
  • a high electric field application process or a laser beam irradiation process is used as the activation process, surprisingly, even if a metal oxide that does not inherently have conductivity is used, the emission starting electric field is sufficiently reduced and the force is sufficient. Emission power to obtain current.
  • the activation treatment is a method of forming an electron emission portion called a so-called emission site in an electron emission material on a substrate.
  • this also includes removing sites that do not contribute to emissions or that have adverse effects.
  • the parts that do not contribute to the emission mentioned here are, for example, impurities, electron-emitting materials arranged in a direction different from the direction of the applied electric field, and even if arranged in the electric field direction, they are dense and hinder electric field concentration. This refers to the electron emission material that is present.
  • the electron emission portion of the present invention will be described with reference to FIG.
  • the metal oxide 1 that is an electron emission material is the force S deposited on the force sword substrate 2, and if this deposition amount is uniform, electric field concentration is less likely to occur in the electron emission material and the emission start voltage increases. Or a sufficient emission current may not be obtained.
  • a high electric field concentration effect can be obtained at the boundary 4 between the sparse region and the dense region by locally forming the portion 3 where the deposition amount is sparse.
  • the boundary includes the boundary and its vicinity, and is preferably the boundary.
  • FIGS. 2A and 2B are electron microscopic images of an electron emission part that has not been activated
  • FIGS. 3A and B are electron micrographs of the electron emission part that have been activated according to an embodiment of the present invention. It is a statue.
  • Figs. 3A and B the presence of local sparse regions and the presence of prominent structures are observed.
  • the area, position, and spacing of the sparse portion, the number of protruding structures, etc. are not particularly limited, and may be present in the electron emission portion to the extent that the effect is recognized. As described below, various methods can be applied as the activation processing method.
  • Examples of the metal oxide that can be used in the present invention include titanium oxide, tin oxide, and zinc oxide.
  • titanium oxide and tin oxide are preferable metal oxides because they have excellent emission characteristics and can be manufactured at low cost.
  • Titanium oxide may be any crystalline form of titanium oxide, which is known to have a rutile, anatase, or brookite type as its crystalline form.
  • the particle shape of the metal oxide is more preferably an acicular shape such as an acicular shape or a plate shape, but may be a shape having a small anisotropy shape such as a granular shape.
  • particles having a size in the range of several nm to 10 m are not particularly limited.
  • the activation process includes a so-called tape peeling process in which a tape is applied to the surface of the electron emission part and then peeled off, a process of mechanically polishing the electron emission part, and a high electric field in a direction perpendicular to the electrode surface in the electron emission part. This is the power to apply the process of applying, and the irradiation process with the laser beam to the electron emission part.
  • a metal oxide having conductivity for the electron emission portion it is preferable to use a metal oxide having conductivity for the electron emission portion, and more preferably, an acicular conductive titanium oxide is used as the metal oxide. And / or acicular conductive tin oxide. Needle-like conductive titanium oxide has a minor axis diameter of 0 ;! ⁇ 0. ⁇ ⁇ ⁇ ⁇ major axis diameter 1. 0—10.0 m and an axial ratio (major axis diameter / minor axis diameter) of 10 A shape of ⁇ 20 is preferred.
  • acicular conductive tin oxide has a minor axis diameter of 0.005-0.050 111, a major axis diameter of 0 ⁇ ;! to 5.0 ⁇ m, and an axial ratio (major axis diameter / minor axis diameter) of 20 ⁇ ; 100 shapes are preferred.
  • the needle shape includes not only the needle shape but also a shape called a rod shape or a column shape.
  • the electrical conductivity of the particles is preferably high! /, But volume resistance is used as an index of electrical conductivity.
  • the range force is at most 10 ⁇ cm, preferably S, more preferably from 0 ⁇ 01 to; 100 ⁇ cm.
  • any known acicular conductive titanium oxide can be used.
  • the acicular conductive tin oxide for example, the use of acicular conductive tin oxide described in JP-A-8-217444, JP-A-8-217445, JP-A-8-231222, etc. Monkey.
  • Acicular conductive titanium oxide is obtained by subjecting acicular titanium dioxide to a conductive treatment, and can be produced, for example, according to the method described in the above publication. That is, it can be produced by heating a mixture of titanium dioxide powder and metal titanium powder in an inert gas atmosphere, or by heating and reducing titanium dioxide powder in an ammonia gas atmosphere. In the method of heating and reducing titanium dioxide powder in an ammonia gas atmosphere, the ratio of titanium and oxygen can be changed by appropriately adjusting the conditions such as the heating atmosphere and temperature, thereby achieving the desired conductivity. It is preferable because conductive nonstoichiometric titanium oxide particles can be obtained.
  • the titanium oxide in the present invention includes titanium oxynitride in which part of oxygen is replaced with nitrogen by heat treatment in an ammonia gas atmosphere.
  • a metal oxide having a high dielectric constant such as titanium oxide as the electron emission material because the interaction with the electric field can be further strengthened. Furthermore, even when a weak discharge is caused in a high electric field application process, a part of the electron emission portion can be peeled off to obtain a minute sparse region.
  • an activation processing apparatus in which an electron emission portion is a force sword and an anode electrode is installed on the opposite side at a certain distance.
  • the activated electron emission part has a large area
  • the force sword electrode known materials such as ITO glass and metal A1 plate can be used. Furthermore, a known plastic substrate formed with a conductive oxide or metal film can also be used as a force sword substrate, and such a substrate is more preferable because it can be applied to flexible applications.
  • the same anode electrode can be used.
  • the force sword electrode is aluminum or a substrate having an aluminum layer on the surface, and the metal oxide is preferably titanium oxide, or the force sword electrode is a substrate having an electrically conductive titanium oxide layer on the surface. It is preferable that the metal oxide is titanium oxide.
  • substrate is not specifically limited, For example, it is glass.
  • the difference between the work function of the force sword electrode after activation and the work function of the metal oxide in the electron emission portion is preferably 2 eV or less, and more preferably 0.5 eV or less.
  • a method for forming an electron emission portion containing a metal oxide on a force sword electrode is as follows.
  • a metal oxide preferably a metal oxide powder
  • the substrate is submerged in the dispersion to statically.
  • a known method such as a method (precipitation method) of depositing the metal oxide powder on the substrate by natural precipitation (precipitation method), a CVD method, or an electrophoretic deposition method can be used.
  • a metal oxide preferably a metal oxide powder and an immobilizing substance are dispersed in an arbitrary solvent to form an electron emission source composition, and the paste-like composition is preferably applied onto a substrate.
  • an electron emission portion may be formed.
  • the application method is not particularly limited, and any of screen printing, spray printing, dipping, spin coating, doctor blade, and applicator methods may be used.
  • the solvent is not particularly limited, but for example, toluene, terbinol, butyl carbitol, butyl carbitol acetate, methyl isobutyl ketone, methyl ethyl ketone, cyclohexane, anisole, N-methyl-2-pyrrolidone, n-butanol, isopropanol, For example, acetonitrile is used.
  • the immobilization substance a part of the metal oxide in the electron emission part and the substrate are bound by the immobilization substance, and the electron emission part may be peeled off by being charged during operation. This is preferable because it is prevented and can provide a stable emission current for a long time.
  • Examples of the immobilizing substance include glass compositions such as glass powder colloidal silica and alkyl silicate, and metal, metal oxide, and complex nanoparticle sols, and glass compositions are preferred. Especially when using a glass composition, the amount added is in terms of SiO,
  • the addition ratio and solvent of the metal oxide and the immobilizing substance are not particularly limited, and are appropriately determined experimentally depending on the type of the metal oxide and the immobilizing substance.
  • heat treatment is required to obtain a binding effect.
  • heat treatment is performed at a temperature higher than that at which these surfaces are necked
  • alkyl silicate is used, the heat treatment is performed at a temperature higher than that at which the alkyl silicate initiates the polymerization reaction! .
  • the upper limit of the heat treatment temperature is selected according to the heat resistance temperature of the power sword substrate and metal oxide powder used, and is 100 ° C to 1 000 ° C. C, preferred ⁇ 200. C ⁇ 600. C.
  • heat treatment atmosphere air, inert gas, vacuum, or the like can be used.
  • heat treatment in an inert gas atmosphere or vacuum is suitable.
  • the electron emission source composition contains an organic substance, it is necessary to oxidatively decompose and remove the organic substance by heat treatment. In this case, heat treatment in the atmosphere is suitable. Therefore, it is possible to perform multi-step heat treatment by combining firing in different atmospheres! /.
  • a dispersant may be added in order to disperse the metal oxide or the immobilizing substance, and a resin may be added in order to adjust the viscosity and improve the coating property.
  • a resin known resins such as acrylic resins, cellulose resins, alkyd resins, melamine resins, epoxy resins, etc. can be widely used. Since they must be removed by heat treatment, acrylic resins that decompose at a relatively low temperature. More preferably, cellulose resin or the like is used.
  • the resin content is appropriately adjusted because the viscosity varies depending on the coating method. It is. For example, when screen printing or applicator method is used, even those with relatively high viscosity can be used.
  • the solid content that is, the sum of metal oxide and resin
  • the electron emission source composition is contained in the electron emission source composition at 1 to 70% by weight. It is preferable.
  • the electron emission source composition contains 1 to 30% by weight of a solid content.
  • a conductive material such as metal fine particles or conductive carbon may be mixed. These additives are not particularly limited, and if they are used in the preparation of ordinary organic paints, the addition ratio may be determined as appropriate according to the type and amount of the metal oxide and the immobilizing substance to be used. Just do it.
  • the cold cathode electron source of the present invention is obtained by activating the electron emission portion containing the metal oxide formed on the force sword electrode by the above method.
  • the activation treatment a tape peeling treatment, a high electric field application treatment, an irradiation treatment with a laser beam, and the like can be used. From a practical aspect, a high electric field application treatment or an irradiation treatment with a laser beam is preferable.
  • the electric field strength used for high electric field treatment is higher than SV / ⁇ m, more preferably a pulse high electric field with a no-less width of 5 to 2000 s and a repetition frequency of 1 to 1000 Hz.
  • the wavelength of the laser beam used is preferably in the range of 150 to 550 nm, more preferably 248 nm KrF excimer laser.
  • the laser energy density is 10 to 200 mj / cm 2
  • the pulse width is 5 to 20 ns
  • the pulse repetition frequency is !! to 100 Hz
  • the power density at this time is 0 ⁇ ;!
  • To 20 MW / cm 2 preferably 0. 7 ⁇ 8 ⁇ 6MW / cm 2 , more preferably a 3 ⁇ 7MW / cm 2.
  • the present invention relates to FED and FEL using the cold cathode electron source.
  • the cold cathode electron source of the present invention can form a metal oxide layer on a substrate by a coating method as described above, and is suitable for manufacturing a large area cold cathode electron source. It is suitable as an emitter material for large screen FEDs and FELs that require a cathode electron source.
  • the FEL of the present invention is obtained by forming a metal oxide cold cathode on a conductive substrate, placing a transparent substrate such as glass coated with a fluorescent film on the opposite side, and vacuum-sealing it.
  • the surface of the fluorescent film may be provided with a conductive vapor deposition film such as metal A1 or metal Zn.
  • the FEL of the present invention has a driving voltage and a pulse width. It can be said that it is excellent as a lighting fixture because the lamp can be easily dimmed by adjusting the gate and, if necessary, forming a gate electrode between the electrodes.
  • FIG. 5 is a configuration example of a bipolar FEL
  • FIG. 6 is a configuration example of a FEL having a gate electrode.
  • 5 and 6 9 is a phosphor layer
  • 10 is an A1 vapor deposition film
  • 11 is an electron emission part
  • 12 is a force sword electrode
  • 13 is an insulating support base
  • 14 is glass
  • 15 is a power source
  • 16 is an insulating layer. 17 are gate electrodes.
  • Rutile acicular titanium oxide (FTL — 100, manufactured by Ishihara Sangyo) with an average major axis diameter of 1.68 111 and an average minor axis diameter of 0.13 m was calcined in ammonia gas at a temperature of 800 ° C for 1 hour. Acicular conductive titanium oxide having a volume resistance of 0.021 ⁇ cm was obtained. X-ray diffraction measurement of this acicular conductive titanium oxide revealed that in addition to the rutile-type titanium dioxide peak, a lower oxide and / or nitride peak of titanium was also obtained. Also, it was confirmed by electron microscope observation that the original shape of acicular titanium oxide was retained.
  • acicular conductive titanium oxide is mixed with an Ag paste and applied to an ITO substrate, and a portion of the acicular conductive titanium oxide is formed on the substrate by a so-called tape peeling process in which a tape is applied and then peeled off.
  • a cold cathode electron source of the present invention oriented vertically was prepared. An ITO substrate coated with a ZnO phosphor film was placed in parallel with the cold cathode electron source at an interval of 125 ⁇ .
  • Example 2 Baked acicular titanium oxide (FTL-300, manufactured by Ishihara Sangyo) with an average major axis diameter of 5. 15 111 and an average minor axis diameter of 0.27 m in ammonia gas at a temperature of 800 ° C for 1 hour. Acicular conductive titanium oxide having a resistance of 0.044 ⁇ cm was obtained. Since the cold cathode electron source and the field emission light emitting device (device B) of the present invention were produced in the same manner as in Example 1, and the FN plot was taken, linearity was shown in the electric field region of 5 V / m or more. It was confirmed that the emission was field emission.
  • FTL-300 manufactured by Ishihara Sangyo
  • the cold cathode electron source and the field emission light-emitting device (device C) of the present invention were prepared by the same treatment as in Fig. 1, and the F—N plot showed linearity in an electric field region of 5 V / m or more. It was confirmed that the mission was field emission.
  • Disperse titanium oxide (F TL 100, manufactured by Ishihara Sangyo), which has an average major axis diameter of 1.68 111 and an average minor axis diameter of 0.113 111, in water and submerge the A1 substrate in this dispersion.
  • acicular titanium oxide was deposited on the A1 substrate.
  • a cold cathode electron source of the present invention was produced by irradiating this non-conductive acicular titanium oxide film with a KrF excimer laser with a wavelength of 248 nm at a power density of 3 MW / cm 2 and a pulse width of 20 ns.
  • Example D An ITO substrate coated with a ZnO phosphor film was placed in parallel with the cold cathode electron source at an interval of 250 m. And a phosphor layer anode, a cold cathode electron source and connect the power such that the force cathode sealed vacuum sealed 10_ 5 Pa, to obtain a field emission light-emitting device (Sample D).
  • sample E An inventive cold cathode electron source (sample E) was obtained.
  • the emission started at an electric field of 2 V / ⁇ m, and it was confirmed from the FN plot that this emission was a field emission.
  • the emission current in the electric field m was ImA / cm 2 .
  • FIG. 7 A graph showing the relationship between the applied voltage and the emission current density of Samples D and E is shown in Fig. 7, and a graph showing the FN plot of Samples D and E is shown in Fig. 8.
  • An average length of 1.68 111, an average diameter of 0.13 m of needle-shaped titanium oxide (FTL-100, manufactured by Ishihara Sangyo) and an average particle diameter of 1.1 m of glass powder In a weight ratio, it was dispersed in a mixed solution of toluene and n-butanol to which a dispersing agent was added, and an acrylic resin was added to form a paint, which was applied onto an ITO glass substrate using an applicator. Organic substances in the coating composition were removed by baking at 500 ° C. for 1 hour in a nitrogen atmosphere. An ITO substrate was placed in parallel with the obtained titanium oxide film at a distance of 125 m.
  • Titanium oxide film force Sword ITO substrate pairs direction side vacuum sealing to connect the power 10_ 5 Pa so that the anode.
  • An activation treatment was performed by applying a pulse high electric field of 3.5 kV, a pulse width of 167 s, and a repetition frequency of 60 Hz for 1 second between the obtained electrodes to obtain the cold cathode electron source of the present invention.
  • the field-emission light-emitting device (sample F) using the cold cathode electron source of the present invention is obtained by replacing the opposing ITO electrode with an electrode with a ZnO phosphor film and vacuum-sealing in the same manner as described above.
  • the current due to the emitted electrons was measured and the F—N plot was taken using the Fowler-Nordheim equation, linearity was shown in the electric field region of 3.5 V / m or more. It was confirmed that the mission was field emission.
  • E mission current in the electric field SV / ⁇ m was 10_ 2 mA / cm 2.
  • Fig. 9 is a graph showing the relationship between the applied voltage and the emission current density of Sample F.
  • the light emission pattern of the ZnO phosphor film is shown in FIG.
  • Titanium oxide with an average length of 1.68 111 and an average diameter of 0.13 m (FTL—100) (Manufactured by Ishihara Sangyo Co., Ltd.) and glass powder with an average particle size of 1.1 m in a weight ratio of 1: 0.12 in a mixed solution of toluene and n-butanol with a dispersant added, and acrylic resin added.
  • the coating was made into a paint and applied onto an ITO glass substrate using an applicator. Organic substances in the coating composition were removed by baking at 400 ° C. for 1 hour in a nitrogen atmosphere.
  • a cold cathode electron source was obtained by irradiating this non-conductive acicular titanium oxide film with a KrF excimer laser with a wavelength of 248 nm at a low power density of lMW / cm 2 and a 20 ns pulse width.
  • An ITO substrate coated with a ZnO phosphor film was placed in parallel with the cold cathode electron source at an interval of 125 m. Then, a power source was connected so that the fluorescent film was an anode and the cold cathode electron source was a force sword, and vacuum sealing was performed at 10 to 5 Pa to obtain a field emission light emitting device (Sample G). Emission was not confirmed even when the voltage was increased to 8 V / m when the voltage was applied to Sample G.
  • a cold cathode electron source (sample H) of the present invention was obtained in the same manner as in Example 7 except that the substrate was a glass plate on which aluminum was deposited.
  • emission started at an electric field of 3 V / ⁇ m, and it was confirmed from the FN plot that this emission was a field emission.
  • E mission current in field m was 10_ 2 mA / cm 2.
  • the cold cathode electron source of the present invention has greatly improved emission characteristics.
  • the cold cathode electron source of the present invention is useful for a field emission flat panel display (FED), a field emission lamp (a cold cathode electron source incorporated in a device utilizing a light emission phenomenon by electron beam excitation such as FEU). It is.
  • FED field emission flat panel display
  • FEU field emission lamp
  • FIG. 1 shows the structure of an electron emission portion in an embodiment of the present invention.
  • FIG. 2A is an electron microscopic image of the electron emission part after activation! /, NA! /.
  • FIG. 2B is an electron microscopic image of the electron emission part after activation! /, NA! /.
  • FIG. 3A is an electron micrograph image of an activated electron emission portion in an embodiment of the present invention.
  • 3B An electron microscopic image of an activated electron emission portion in the embodiment of the present invention.
  • FIG. 6 shows a configuration example of a FEL having a gate electrode in the embodiment of the present invention.
  • 7 A graph showing the relationship between the applied voltage and emission current density for samples D and E.
  • FIG. 8 is a graph showing FN plots of Samples D and E.
  • FIG. 10 shows the emission pattern of the ZnO phosphor film of Sample F.

Abstract

La présente invention concerne une source d'électrons à cathode froide ayant une partie cathodique et une partie d'émission d'électrons prévue sur l'électrode cathodique et utilisant un oxyde de métal activé. L'activation est réalisée par élévation par décollement de ruban, par application d'un faisceau laser, en appliquant un champ électrique élevé ou analogue. Si l'application laser ou l'application d'un champ électrique élevé est utilisée, un phénomène d'émission peut être provoqué même avec application d'une basse tension si un oxyde de métal non conducteur est utilisé. Il est possible de fournir une source d'électrons à cathode froide dans laquelle l'oxyde de métal plus onéreux que le nanotube de carbone est utilisé en tant que matériau émetteur.
PCT/JP2007/073507 2006-12-06 2007-12-05 Source d'électrons à cathode froide, procédé de fabrication associé, et élément d'émission de lumière utilisant celle-ci WO2008069243A1 (fr)

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Cited By (5)

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CN103515170A (zh) * 2012-06-28 2014-01-15 清华大学 碳纳米管场发射体的制备方法
RU2525856C1 (ru) * 2013-04-16 2014-08-20 Открытое акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" (ОАО "НИИ "Полюс" им. М.Ф. Стельмаха") Технологический прибор для обработки полого холодного катода в газовом разряде
RU2581610C1 (ru) * 2014-12-17 2016-04-20 Открытое акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" (ОАО "НИИ "Полюс" им. М.Ф. Стельмаха") Способ создания анодной окисной плёнки холодного катода газового лазера в тлеющем разряде постоянного тока
RU2713915C1 (ru) * 2019-09-11 2020-02-11 Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" Способ изготовления окисной пленки холодного катода газового лазера в тлеющем разряде постоянного тока
CN111081504A (zh) * 2019-12-10 2020-04-28 深圳先进技术研究院 场发射阴极及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006120636A (ja) * 2004-10-19 2006-05-11 Samsung Sdi Co Ltd 電子放出源形成用の組成物、これを利用した電子放出源の製造方法、及び電子放出源

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3305405B2 (ja) * 1993-03-25 2002-07-22 石原産業株式会社 棒状微粒子導電性酸化チタンおよびその製造方法
US5726524A (en) * 1996-05-31 1998-03-10 Minnesota Mining And Manufacturing Company Field emission device having nanostructured emitters
US6495965B1 (en) * 1998-07-21 2002-12-17 Futaba Corporation Cold cathode electronic device
JP2000123714A (ja) * 1998-10-19 2000-04-28 Sony Corp 冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置
US6504292B1 (en) * 1999-07-15 2003-01-07 Agere Systems Inc. Field emitting device comprising metallized nanostructures and method for making the same
JP4043153B2 (ja) * 1999-07-30 2008-02-06 双葉電子工業株式会社 電子放出源の製造方法、エミッタ基板の製造方法、電子放出源及び蛍光発光型表示器
JP4136211B2 (ja) * 1999-08-02 2008-08-20 キヤノン株式会社 円筒状フィルムの製造方法
US6436221B1 (en) * 2001-02-07 2002-08-20 Industrial Technology Research Institute Method of improving field emission efficiency for fabricating carbon nanotube field emitters
CN1155980C (zh) * 2001-11-27 2004-06-30 北京大学 一种场发射阴极及其制造方法和应用
US7455757B2 (en) * 2001-11-30 2008-11-25 The University Of North Carolina At Chapel Hill Deposition method for nanostructure materials
JP2004127730A (ja) * 2002-10-03 2004-04-22 Hidetoshi Saito 針状金属酸化物構造体及びその製造方法
JP4083611B2 (ja) * 2003-03-25 2008-04-30 三菱電機株式会社 冷陰極電子源の製造方法
JP4678156B2 (ja) * 2004-08-11 2011-04-27 ソニー株式会社 カソードパネルのコンディショニング方法、冷陰極電界電子放出表示装置のコンディショニング方法、及び、冷陰極電界電子放出表示装置の製造方法
JP4517865B2 (ja) * 2005-01-26 2010-08-04 Ｊｆｅエンジニアリング株式会社 カーボンナノチューブ電極の製造方法
JP2006210162A (ja) * 2005-01-28 2006-08-10 Stanley Electric Co Ltd 電子線源

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006120636A (ja) * 2004-10-19 2006-05-11 Samsung Sdi Co Ltd 電子放出源形成用の組成物、これを利用した電子放出源の製造方法、及び電子放出源

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103515170A (zh) * 2012-06-28 2014-01-15 清华大学 碳纳米管场发射体的制备方法
CN103515170B (zh) * 2012-06-28 2016-04-27 清华大学 碳纳米管场发射体的制备方法
RU2525856C1 (ru) * 2013-04-16 2014-08-20 Открытое акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" (ОАО "НИИ "Полюс" им. М.Ф. Стельмаха") Технологический прибор для обработки полого холодного катода в газовом разряде
RU2581610C1 (ru) * 2014-12-17 2016-04-20 Открытое акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" (ОАО "НИИ "Полюс" им. М.Ф. Стельмаха") Способ создания анодной окисной плёнки холодного катода газового лазера в тлеющем разряде постоянного тока
RU2713915C1 (ru) * 2019-09-11 2020-02-11 Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" Способ изготовления окисной пленки холодного катода газового лазера в тлеющем разряде постоянного тока
CN111081504A (zh) * 2019-12-10 2020-04-28 深圳先进技术研究院 场发射阴极及其制备方法
CN111081504B (zh) * 2019-12-10 2022-07-05 深圳先进技术研究院 场发射阴极及其制备方法

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