WO2008050258A3 - Optically pumped solid-state laser with co-doped gain medium - Google Patents

Optically pumped solid-state laser with co-doped gain medium Download PDF

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Publication number
WO2008050258A3
WO2008050258A3 PCT/IB2007/054188 IB2007054188W WO2008050258A3 WO 2008050258 A3 WO2008050258 A3 WO 2008050258A3 IB 2007054188 W IB2007054188 W IB 2007054188W WO 2008050258 A3 WO2008050258 A3 WO 2008050258A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser
ions
state
gain medium
solid
Prior art date
Application number
PCT/IB2007/054188
Other languages
French (fr)
Other versions
WO2008050258A2 (en
Inventor
Ulrich Weichmann
Peter J Schmidt
Original Assignee
Philips Intellectual Property
Koninkl Philips Electronics Nv
Ulrich Weichmann
Peter J Schmidt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Intellectual Property, Koninkl Philips Electronics Nv, Ulrich Weichmann, Peter J Schmidt filed Critical Philips Intellectual Property
Priority to US12/446,271 priority Critical patent/US20100316073A1/en
Priority to EP07826745A priority patent/EP2084792A2/en
Priority to JP2009533997A priority patent/JP2010507920A/en
Publication of WO2008050258A2 publication Critical patent/WO2008050258A2/en
Publication of WO2008050258A3 publication Critical patent/WO2008050258A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1605—Solid materials characterised by an active (lasing) ion rare earth terbium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1631—Solid materials characterised by a crystal matrix aluminate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1631—Solid materials characterised by a crystal matrix aluminate
    • H01S3/1638—YAlO3 (YALO or YAP, Yttrium Aluminium Perovskite)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1655—Solid materials characterised by a crystal matrix silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1668—Solid materials characterised by a crystal matrix scandate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1691—Solid materials characterised by additives / sensitisers / promoters as further dopants
    • H01S3/1698—Solid materials characterised by additives / sensitisers / promoters as further dopants rare earth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The present invention relates to a solid-state laser comprising a gain medium (6) of a solid-state host material which is co-doped with Ce3+-ions and ions of a further rare-earth material. The host material is selected such that a lower edge of the 5d band of the Ce3+-ions is energetically higher than an upper lasing state of the ions of the further rare-earth material. This laser can be optically pumped by GaN laser diodes (4) in the wavelength region between 400 and 450 nm and emits laser radiation in the visible wavelength range. With this laser, in particular, a GaN diode laser pumped solid-state laser emitting in the green wavelength region can be realized.
PCT/IB2007/054188 2006-10-24 2007-10-15 Optically pumped solid-state laser with co-doped gain medium WO2008050258A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/446,271 US20100316073A1 (en) 2006-10-24 2007-10-15 Optically pumped solid-state laser with co-doped gain medium
EP07826745A EP2084792A2 (en) 2006-10-24 2007-10-15 Optically pumped solid-state laser with co-doped gain medium
JP2009533997A JP2010507920A (en) 2006-10-24 2007-10-15 Optically pumped solid-state laser with co-doped gain medium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06122825 2006-10-24
EP06122825.0 2006-10-24

Publications (2)

Publication Number Publication Date
WO2008050258A2 WO2008050258A2 (en) 2008-05-02
WO2008050258A3 true WO2008050258A3 (en) 2008-06-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2007/054188 WO2008050258A2 (en) 2006-10-24 2007-10-15 Optically pumped solid-state laser with co-doped gain medium

Country Status (5)

Country Link
EP (1) EP2084792A2 (en)
JP (1) JP2010507920A (en)
CN (1) CN101529672A (en)
TW (1) TW200830652A (en)
WO (1) WO2008050258A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012521650A (en) * 2009-03-23 2012-09-13 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Optically pumped solid-state laser and illumination system having the solid-state laser
US8831060B2 (en) * 2010-06-22 2014-09-09 Koninklijke Philips N.V. Laser
CN102051684A (en) * 2011-01-14 2011-05-11 中国科学院上海光学精密机械研究所 Method for growing thulium-holmium co-doped yttrium calcium aluminate laser crystal
JPWO2014006879A1 (en) * 2012-07-02 2016-06-02 国立大学法人北海道大学 LASER MEDIUM, LASER OSCILLATION DEVICE, AND LASER OSCILLATION METHOD

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050265411A1 (en) * 2002-05-08 2005-12-01 Takeuchi Eric B Short wavelength diode-pumped solid-state laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050265411A1 (en) * 2002-05-08 2005-12-01 Takeuchi Eric B Short wavelength diode-pumped solid-state laser

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
LIN ET AL: "Crystal structure dependence of the luminescence of rare earth ions (Ce<3+>, Tb<3+>, Sm<3+>) in Y2SiO5", MATERIALS RESEARCH BULLETIN, ELSEVIER, KIDLINGTON, GB, vol. 31, no. 2, February 1996 (1996-02-01), pages 189 - 196, XP022270440, ISSN: 0025-5408 *
LIN HAI ET AL: "Spectral properties and sensitization of Ce<3+> and Eu<2+> codoped calcium zinc chlorosilicate", J RARE EARTH; JOURNAL OF RARE EARTHS 1998 CHINESE RARE EARTH SOC, BEIJING, CHINA, vol. 16, no. 1, 1998, pages 68 - 71, XP002473476 *
PANG ET AL: "Study on the growth, etch morphology and spectra of Y2SiO5 crystal", MATERIALS LETTERS, NORTH HOLLAND PUBLISHING COMPANY. AMSTERDAM, NL, vol. 59, no. 28, December 2005 (2005-12-01), pages 3539 - 3542, XP005095206, ISSN: 0167-577X *
RAKOV N ET AL: "Enhancement of luminescence efficiency of f-f transitions from Tb<3+> due to energy transfer from Ce<3+> in Al2O3 crystalline ceramic powders prepared by low temperature direct combustion synthesis", CHEMICAL PHYSICS LETTERS, NORTH-HOLLAND, AMSTERDAM, NL, vol. 400, no. 4-6, 21 December 2004 (2004-12-21), pages 553 - 557, XP004679131, ISSN: 0009-2614 *

Also Published As

Publication number Publication date
JP2010507920A (en) 2010-03-11
WO2008050258A2 (en) 2008-05-02
CN101529672A (en) 2009-09-09
TW200830652A (en) 2008-07-16
EP2084792A2 (en) 2009-08-05

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