WO2008050258A2 - Optically pumped solid-state laser with co-doped gain medium - Google Patents
Optically pumped solid-state laser with co-doped gain medium Download PDFInfo
- Publication number
- WO2008050258A2 WO2008050258A2 PCT/IB2007/054188 IB2007054188W WO2008050258A2 WO 2008050258 A2 WO2008050258 A2 WO 2008050258A2 IB 2007054188 W IB2007054188 W IB 2007054188W WO 2008050258 A2 WO2008050258 A2 WO 2008050258A2
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- ions
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- solid
- state
- state laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1605—Solid materials characterised by an active (lasing) ion rare earth terbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1631—Solid materials characterised by a crystal matrix aluminate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1631—Solid materials characterised by a crystal matrix aluminate
- H01S3/1638—YAlO3 (YALO or YAP, Yttrium Aluminium Perovskite)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1655—Solid materials characterised by a crystal matrix silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1668—Solid materials characterised by a crystal matrix scandate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1691—Solid materials characterised by additives / sensitisers / promoters as further dopants
- H01S3/1698—Solid materials characterised by additives / sensitisers / promoters as further dopants rare earth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Definitions
- the present invention relates to a solid-state laser comprising a gain medium of a solid-state host material, which is doped with rare-earth ions.
- US 6,816,532 B2 discloses a laser diode exited laser apparatus in which the gain medium is doped with rare-earth ions, in particular with Ho 3+ -, Sm 3+ -, Eu 3+ -, Dy 3+ -, Er 3+ - and Tb 3+ - ions.
- the solid gain medium is pumped by a GaN based laser diode. Both the excitation and the laser emission of the disclosed laser involve transitions between 4f states of the rare-earth ion. Since the absorption at these transitions is relatively weak, the efficiency of the devices is limited and long interaction lengths like for example in fiber lasers are required.
- the proposed solid-state laser comprises a gain medium of a solid-state host material, which is co-doped with the Ce 3+ - ions and with ions of a further rare-earth material.
- the host material is selected such that a lower edge of the 5d band of the Ce 3+ - ion is energetically higher than an upper lasing state of the ions of the further rare-earth material.
- the proposed all solid-state laser can be pumped efficiently with GaN laser diodes in the wavelength range of for example between 400 and 450 nm.
- the gain medium absorbs the radiation of the pump laser via the 4f-5d transitions in the Ce 3+ - ion. From the 5d band of the Ce 3+ - ion the energy is transferred to the upper lasing state of the further rare-earth ion which then emits the desired laser radiation through a transition between the upper lasing state and a lower lasing state.
- the emitted laser wavelength is influenced by the selection of the further rare-earth ions and may further be influenced by the spectral characteristics of the resonator mirrors of the solid-state laser.
- Ce 3+ - ions with further trivalent rare- earth ions are combinations of Ce 3+ -ions with Pr 3+ , Sm 3+ , Eu 3+ , Dy 3+ and Tm 3+ to design lasers emitting with different wavelengths in the visible wavelength range.
- the proposed solid-state laser comprises a gain medium of a solid-state host material, which is co-doped with Ce 3+ - ions and Tb 3+ - ions.
- the laser pumping scheme involves 4f-5d-transitions in Ce 3+ , energy transfer from the Ce 3+ 5d band to the 5 D 4 -state of Tb 3+ , from which laser emission takes place.
- This scheme is very attractive since it combines the high absorption of 4f-5d-transitions with the known laser properties of rare-earth 4f-4f lasers. Highly integrated, efficient laser devices are therefore possible.
- the Tb 3+ - ion is very attractive to provide an optically pumped solid-state laser in the green wavelength range, since it has a well isolated 5 D 4 state with a long lifetime in many hosts. From this 5 D 4 -level green emission around 543 nm is very pronounced.
- the dopant concentration Cce for the Ce 3+ -ions is preferably in the range of 0.01% wt to 5% wt.
- the appropriate selection of this host material is important in order to achieve the desired laser action.
- Very advantageous laser operation has been observed when using host materials with an energy gap of at least 6 eV.
- the host materials also have to ensure the energy transfer between the 5d-band of the Ce 3+ -ions and, for example, the 5 D 4 state of the Tb 3+ ions.
- the Ce 3+ -ions act as a sensitizer and provide a good absorption of the pump radiation via the 4f-5d transitions, whereas the further rare-earth ions act as the laser active ions.
- solid-state host materials doped with Ce 3+ -ions are not suited for laser action due to very strong excited state absorption, it was surprisingly found by the inventors of the present invention, that by co-doping the Ce 3+ -ions with further trivalent rare-earth ions and by selecting an appropriate host material, laser action can be achieved in an efficient manner.
- an all-solid-state laser is realized which can be efficiently pumped by GaN based laser diodes to emit in the green wavelength range.
- Such all-solid-state laser systems including the pump laser can be manufactured in a highly integrated manner and are in particular suited as light sources for projection systems in display or illumination applications.
- the optical design of the all-solid-state laser can be chosen as known in the art.
- a laser can be set up for example in the form of an end pumped rod, similar to other diode pumped solid-state lasers known in the art.
- the proposed laser can also be designed in the form of a planar waveguide laser, in which the co-doped material is brought to the form of a planar waveguide that is adapted in its geometry to the emission profile of the laser diode.
- the laser diode and the co-doped conversion medium are preferably placed on a shared cooling structure, which allows for a highly integrated device.
- the high absorption of the Ce 3+ -ions allows also for transversal pump geometries, in which the laser radiation emerges in a direction perpendicular to the direction of the pump radiation.
- Fig. 1 an excitation scheme of a preferred embodiment of the proposed laser
- Fig. 2 an example for an end pumped geometry of the proposed laser
- Fig. 3 an example of a transversally pumped geometry of the proposed laser.
- the gain medium of the proposed laser is co-doped with Ce 3+ - and Tb 3+ -ions.
- the Ce-Tb-laser is pumped with a GaN based laser diode.
- Figure 1 shows the pumping and lasing scheme of such a solid-state laser.
- the blue pump radiation 1 of the GaN based laser diode is absorbed via the 4f-5d transition of the Ce 3+ -ions.
- energy transfer 2 takes place between the 5d band of the Ce 3+ -ions and the upper lasing state ( 5 D 4 state) of the Tb 3+ - ions as is indicated in the figure. From this 5 D 4 state of the Tb 3+ -ions laser emission 3 around 543 nm starts by transition to a lower state of the Tb 3+ -ions.
- the laser emission 3 is very pronounced in this laser scheme.
- Figure 2 shows an example for an end pumped geometry of the proposed Ce-Tb-laser.
- the pump radiation emitted by a GaN laser diode 4 is focused by appropriate optics 5 through the first resonator end mirror 7 of the solid-state laser into the Ce 3+ -Tb 3+ co-doped gain material 6.
- the first resonator end mirror 7 used for end pumping is highly reflective for radiation in the green wavelength region and antireflective for the pump radiation wavelength.
- the second resonator end mirror 8 on the other hand is highly reflective for the wavelength of the pump radiation and sufficiently reflective for the green wavelength emitted by the gain material 6 in order to achieve lasing action. On the other hand this second resonator end mirror 8 allows the outcoupling of a portion of the laser emission 3 in the green wavelength region.
- FIG 3 shows another example for the design of the proposed solid-state laser.
- a transversally pumped geometry is used for the Ce-Tb-laser.
- the gain medium 6 of the Ce-Tb-laser in this case has two resonator end mirrors 10 which reflect a sufficiently high portion of the generated green radiation to maintain laser action. Both resonator end mirrors 10 also serve as outcoupling mirrors for the laser radiation 3.
- the gain medium 6 is transversally pumped by a GaN diode laser module 9 composed of several GaN laser diodes side by side in order to achieve emission of the pump radiation 1 over the whole length of the gain medium 6 as indicated in Figure 3.
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07826745A EP2084792A2 (en) | 2006-10-24 | 2007-10-15 | Optically pumped solid-state laser with co-doped gain medium |
US12/446,271 US20100316073A1 (en) | 2006-10-24 | 2007-10-15 | Optically pumped solid-state laser with co-doped gain medium |
JP2009533997A JP2010507920A (en) | 2006-10-24 | 2007-10-15 | Optically pumped solid-state laser with co-doped gain medium |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06122825 | 2006-10-24 | ||
EP06122825.0 | 2006-10-24 |
Publications (2)
Publication Number | Publication Date |
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WO2008050258A2 true WO2008050258A2 (en) | 2008-05-02 |
WO2008050258A3 WO2008050258A3 (en) | 2008-06-19 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/IB2007/054188 WO2008050258A2 (en) | 2006-10-24 | 2007-10-15 | Optically pumped solid-state laser with co-doped gain medium |
Country Status (5)
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EP (1) | EP2084792A2 (en) |
JP (1) | JP2010507920A (en) |
CN (1) | CN101529672A (en) |
TW (1) | TW200830652A (en) |
WO (1) | WO2008050258A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010109365A1 (en) * | 2009-03-23 | 2010-09-30 | Koninklijke Philips Electronics N.V. | Optically pumped solid-state laser and lighting system comprising said solid-state laser |
JP2013529844A (en) * | 2010-06-22 | 2013-07-22 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | laser |
WO2014006879A1 (en) * | 2012-07-02 | 2014-01-09 | 国立大学法人北海道大学 | Laser medium, laser oscillation device and laser oscillation method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102051684A (en) * | 2011-01-14 | 2011-05-11 | 中国科学院上海光学精密机械研究所 | Method for growing thulium-holmium co-doped yttrium calcium aluminate laser crystal |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050265411A1 (en) * | 2002-05-08 | 2005-12-01 | Takeuchi Eric B | Short wavelength diode-pumped solid-state laser |
-
2007
- 2007-10-15 JP JP2009533997A patent/JP2010507920A/en not_active Withdrawn
- 2007-10-15 EP EP07826745A patent/EP2084792A2/en not_active Withdrawn
- 2007-10-15 CN CNA2007800396257A patent/CN101529672A/en active Pending
- 2007-10-15 WO PCT/IB2007/054188 patent/WO2008050258A2/en active Application Filing
- 2007-10-19 TW TW96139348A patent/TW200830652A/en unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050265411A1 (en) * | 2002-05-08 | 2005-12-01 | Takeuchi Eric B | Short wavelength diode-pumped solid-state laser |
Non-Patent Citations (4)
Title |
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LIN ET AL: "Crystal structure dependence of the luminescence of rare earth ions (Ce<3+>, Tb<3+>, Sm<3+>) in Y2SiO5" MATERIALS RESEARCH BULLETIN, ELSEVIER, KIDLINGTON, GB, vol. 31, no. 2, February 1996 (1996-02), pages 189-196, XP022270440 ISSN: 0025-5408 * |
LIN HAI ET AL: "Spectral properties and sensitization of Ce<3+> and Eu<2+> codoped calcium zinc chlorosilicate" J RARE EARTH; JOURNAL OF RARE EARTHS 1998 CHINESE RARE EARTH SOC, BEIJING, CHINA, vol. 16, no. 1, 1998, pages 68-71, XP002473476 * |
PANG ET AL: "Study on the growth, etch morphology and spectra of Y2SiO5 crystal" MATERIALS LETTERS, NORTH HOLLAND PUBLISHING COMPANY. AMSTERDAM, NL, vol. 59, no. 28, December 2005 (2005-12), pages 3539-3542, XP005095206 ISSN: 0167-577X * |
RAKOV N ET AL: "Enhancement of luminescence efficiency of f-f transitions from Tb<3+> due to energy transfer from Ce<3+> in Al2O3 crystalline ceramic powders prepared by low temperature direct combustion synthesis" CHEMICAL PHYSICS LETTERS, NORTH-HOLLAND, AMSTERDAM, NL, vol. 400, no. 4-6, 21 December 2004 (2004-12-21), pages 553-557, XP004679131 ISSN: 0009-2614 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010109365A1 (en) * | 2009-03-23 | 2010-09-30 | Koninklijke Philips Electronics N.V. | Optically pumped solid-state laser and lighting system comprising said solid-state laser |
CN102362399A (en) * | 2009-03-23 | 2012-02-22 | 皇家飞利浦电子股份有限公司 | Optically pumped solid-state laser and lighting system comprising said solid-state laser |
JP2012521650A (en) * | 2009-03-23 | 2012-09-13 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Optically pumped solid-state laser and illumination system having the solid-state laser |
JP2013529844A (en) * | 2010-06-22 | 2013-07-22 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | laser |
WO2014006879A1 (en) * | 2012-07-02 | 2014-01-09 | 国立大学法人北海道大学 | Laser medium, laser oscillation device and laser oscillation method |
Also Published As
Publication number | Publication date |
---|---|
EP2084792A2 (en) | 2009-08-05 |
WO2008050258A3 (en) | 2008-06-19 |
JP2010507920A (en) | 2010-03-11 |
CN101529672A (en) | 2009-09-09 |
TW200830652A (en) | 2008-07-16 |
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