200830652 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種包含一固態主體材料之增益介質之固 態雷射，該增益介質摻雜有稀土離子。 、 雷射係取代現今UHP燈（UHP :超高效能）作為用於投影 . 系統之光源之良好候選者。雖然紅光及藍光雷射二極體均 可用，但缺乏在綠光波長範圍中之整合雷射源迄今已阻礙 了用於顯示或照明應用之雷射之普遍使用。 Φ 【先前技術】 現今使用之用於綠光波長區域之雷射源依賴於藉由一紅 外雷射源之增頻轉換或倍頻效應（SHG)而進行之頻率轉 換。 自紅外波長區域進行增頻轉換之一可選方法係藍光雷射 源之頻率轉換（諸如習知染料雷射之情況）。藉由用於藍紫 光區域之基於GaN之雷射二極體之當前發展，此方案對於 全固態裝置變得頗有吸引力。 籲 美國第6,816,532 B2號揭示一種雷射二極體激發雷射設 備，其中增益介質摻雜有稀土離子，具體而言摻雜有 “ H〇3+、Sm3+、Eu3+、巧3+、Er3+及Tb3 +離子。該固體增益介 . 質由一基於GaN之雷射二極體抽運。所揭示雷射之激發及 雷射發射兩者皆涉及稀土離子之4f狀態之間的過渡。Z於 該等過渡處之吸收相對微弱，該等裝置之效率受限且在諸 如光纖雷射中需要長的交互作用長度。為用一GaN雷射二 極體作為抽運源來增加Tb3 +離子之上部雷射位準，需要 125820.doc 200830652 488 nm或380 nm朝向5D3位準 nm及380 nm處之有效GaN雷 具有朝向5D4位準繼續相關的以鈍8 之激發。在兩個抽運波長488 nm 射 '一極體尚不可得。 【發明内容】BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid state laser comprising a gain medium of a solid host material doped with rare earth ions. The laser system replaces today's UHP lamps (UHP: Ultra High Performance) as a good candidate for projection systems. While both red and blue laser diodes are available, the lack of integrated laser sources in the green wavelength range has hitherto prevented the widespread use of lasers for display or lighting applications. Φ [Prior Art] The laser source used in the green wavelength region today relies on frequency conversion by up-conversion or frequency doubling (SHG) of an infrared laser source. One of the alternative methods of upconversion from the infrared wavelength region is frequency conversion of a blue laser source (such as in the case of conventional dye lasers). This approach has become attractive for all solid state devices with the current development of GaN-based laser diodes for the blue-violet region. U.S. Patent No. 6,816,532 B2 discloses a laser diode-excited laser device in which a gain medium is doped with rare earth ions, specifically doped with "H〇3+, Sm3+, Eu3+, Q3+, Er3+, and Tb3. + Ion. The solid gain is pumped by a GaN-based laser diode. Both the excitation of the laser and the laser emission involve a transition between the 4f states of the rare earth ions. The absorption at the transition is relatively weak, the efficiency of these devices is limited and a long interaction length is required in such as fiber lasers. To increase the Tb3 + ion upper laser with a GaN laser diode as a pumping source Level, 125820.doc 200830652 488 nm or 380 nm towards 5D3 level nm and 380 nm effective GaN thunder have a blunt 8 excitation towards the 5D4 level. At 488 nm at two pumping wavelengths' One pole is not available yet.
例係該等子請求項之主旨， 匕固態雷射達成。有利之實施 或在包含用於實施本發明之實 施例之後續說明中加以闡述。 所提出之固態雷射包括一固態主體材料之增益介質，該 增盈介質共摻雜有Ce3 +離子及另一稀土材料之離子。選擇 該主體材料以使得Ce、+《5d頻帶之較低邊緣在能量方 面高於該另一稀土材料之該等離子之一上部雷射狀態。 藉由此增益介質，所提出之全固態雷射可藉助波長區域 在（例如）400與450 nm之間的GaN雷射二極體進行有效地 抽運。該增益介質經由Ce3 +離子中之4£_5(1過渡來吸收該抽 運雷射之輻射。將能量自Ce3 +離子之5d頻帶轉移至另一稀 土離子之上部雷射狀態，繼而透過該上部雷射狀態與一較 低雷射狀態之間的過渡來發射合意之雷射輻射。所發射之 雷射波長受到該等更多稀土離子之選擇影響，且可能進一 步受到該固態雷射之共振腔反射鏡之光譜特性影響。適當 選擇主體材料極為重要，此乃因此主體材料影響兩種稀土 離子之能級。The subject matter of these sub-requests is achieved by a solid-state laser. Advantageous implementations or as set forth in the following description of embodiments for carrying out the invention. The proposed solid state laser comprises a gain medium of a solid body material co-doped with ions of Ce3+ ions and another rare earth material. The host material is selected such that the lower edge of the Ce, + "5d band is higher in energy than the upper one of the plasma of the other rare earth material. With this gain medium, the proposed all solid state laser can be efficiently pumped by means of a GaN laser diode having a wavelength region between, for example, 400 and 450 nm. The gain medium absorbs the radiation of the pumped laser via a transition of Ce3 + ions (1 transition). The energy is transferred from the 5d band of the Ce3 + ion to the upper laser state of the other rare earth ion, and then passes through the upper portion. A transition between a laser state and a lower laser state to emit a desired laser radiation. The emitted laser wavelength is affected by the selection of the more rare earth ions and may be further subjected to the resonant cavity of the solid state laser. The influence of the spectral characteristics of the mirror. It is extremely important to properly select the host material, so that the host material affects the energy levels of the two rare earth ions.
Ce離子與其他三價稀土離子之有利組合係ce3 +離子與 125820.doc 200830652 pr 、Sm3+、Eu3+、Dy3+及Tm3+之組合，以設計在可見波 長範圍中具有不同波長之雷射發射。 在一較佳實施例中，所提出之固態雷射包括一固態主體 材料之增盈介質，該增益介質共掺雜有Ce3+離子及Tb3+離 子。在此情況中，該雷射抽運方案涉及以3+中之4厂兄過 渡、自Ce3+之5d頻帶至Tb3+之丸狀態乂能量轉移，據此發 生雷射發射。該方案頗具吸引力，乃因其將衫_5(1過渡之高 效吸收與稀土 4f-4f雷射之已知雷射性質相組合。因而可能 存在高度整合、有效之雷射裝置。Tb3 +離子在提供一在綠 光波長範圍内之光抽運固態雷射方面頗具吸引力，此乃因 其在許多主體中均具有一良好孤立之5〇4狀態且有長的使 用期限。自此5〇4位準，543咖附近之綠光發射極其顯 著。 α3+離子之摻雜物濃度Cce較佳在〇〇1% ”至5% wt之範 圍内。Tb離子濃度CTb較佳根據^中^(其中k在〇5與5〇 之間變化）而依賴於Ce3+離子濃度Cce進行選擇。 :於Ce3 +離子中5魄帶之高能位置以及其他稀土離子中 之雷射狀態之高能位置依賴於主體材_，因此為達成合意 之雷射作用，適當選擇此主體材料頗為重要。當使用具^ 能隙至少為6 eV之主體材料時，已觀測到極其有利之雷射 運作主體材料亦必須確保在以3+離子之5d頻帶與（例 :)Tb3 +離子之、狀態之間的能量轉移。用於所提出之固 二田射之較佳主體材料係Y3_xLUxAi5_yGay〇12(x=1，2,3; 7=1,2,3,4,5) . Y3.xCaxAl5.xSix012 . Y3.xA15.xScx012, m2〇3 125820.doc 200830652 (其中 M=Sc，Y，Lu，Gd，La)、CaYA104及 M2Si〇5(其中 Μ==γ Lu，Gd或該等之組合）。 在所提出之固態雷射中，Ce3 +離子充當光敏劑，且經由 4f-5d過渡提供抽運輻射之良好吸收，而其他稀土離子充备 雷射活性離子。雖然在此項技術中已知，摻雜有Ce3+離子 之固態主體材料由於極強之激發狀態吸收而不適宜於雷射 作用，但本發明之發明者驚奇地發現藉由將Ce3 +離子與其 他三價稀土離子共摻雜且藉由選擇一適宜之主體材料，可 以一有效方式達成雷射作用。此外，藉由將Ce3+離子與 Tb3+相組合，可實現一由基於GaN之雷射二極體有效抽運 以在綠光波長範圍内發射之全固態雷射。包含抽運雷射之 此種全固態雷射系統可以一高度整合方式製造，且尤其適 於作為用於顯示或照明應用中之投影系統之光源。 可如此項技術中所熟知來選擇該全固態雷射之光學設 計。可以（例如）一端抽運杆之形式設立此種雷射，類似於 此項技術中所熟知之其他二極體抽運固態雷射。亦可以平 面波導雷射之形式設計所提出之雷射，其中將該經共摻雜 之材料引入一平面波導之形成’該平面波導之幾何形狀適 於該雷射二極體之發射剖面。在此情況中，該雷射二極體 及該經共摻雜之轉換介質較佳放置在一共享冷卻結構上， 此容許-高度整合之裝置。Ce3+離子之高吸收率亦容許橫 向抽運幾何形狀，其中以與抽運輻射之方向垂直之方向呈 現該雷射輕射。 根據且參照下述實施例進行闡述，本發明之該等及其他 125820.doc 200830652 態樣將顯而易見。 【實施方式】 在以下實施例中，所提出之雷射之增益介質共換雜有An advantageous combination of Ce ions with other trivalent rare earth ions is the combination of ce3 + ions with 125820.doc 200830652 pr , Sm3+, Eu3+, Dy3+ and Tm3+ to design laser emissions with different wavelengths in the visible wavelength range. In a preferred embodiment, the proposed solid state laser comprises an enrichment medium of a solid host material co-doped with Ce3+ ions and Tb3+ ions. In this case, the laser pumping scheme involves the transfer of energy from the 5th band of 3+ to the Pb3+ band of Ce3+, and the laser emission occurs accordingly. This solution is attractive because it combines the high-efficiency absorption of the _5 (1 transition and the known laser properties of the rare earth 4f-4f laser), so there may be a highly integrated and efficient laser device. Tb3 + ions It is attractive to provide a solid-pumped solid-state laser in the green wavelength range because it has a well-isolated 5〇4 state in many subjects and has a long lifespan. Since then 5〇 The green light emission near the 543 coffee is extremely significant. The concentration of the dopant of the α3+ ion Cce is preferably in the range of 〇〇1% ” to 5% wt. The Tb ion concentration CTb is preferably based on ^^^ k varies between 〇5 and 5〇) and depends on the Ce3+ ion concentration Cce. : The high energy position of the 5 魄 band in the Ce3 + ion and the high energy position of the laser state in other rare earth ions depend on the host material _ Therefore, it is important to properly select this host material in order to achieve the desired laser effect. When using a host material with a capacitance of at least 6 eV, it has been observed that the extremely favorable laser operation of the host material must also be ensured. 5d band of 3+ ion and (example:) Tb3 + away Energy transfer between states and states. The preferred host material for the proposed solid-field shot is Y3_xLUxAi5_yGay〇12 (x=1, 2, 3; 7=1, 2, 3, 4, 5). Y3.xCaxAl5.xSix012 . Y3.xA15.xScx012, m2〇3 125820.doc 200830652 (where M=Sc, Y, Lu, Gd, La), CaYA104 and M2Si〇5 (where Μ==γ Lu, Gd or In the proposed solid-state laser, Ce3 + ions act as photosensitizers and provide good absorption of pumping radiation via the 4f-5d transition, while other rare earth ions are filled with laser-active ions. It is known in the art that a solid host material doped with Ce3+ ions is not suitable for laser action due to strong excitation state absorption, but the inventors of the present invention surprisingly found that by using Ce3+ ions with other trivalent rare earth ions Co-doping and laser selection can be achieved in an efficient manner by selecting a suitable host material. Furthermore, by combining Ce3+ ions with Tb3+, an efficient pumping of GaN-based laser diodes can be achieved. An all-solid-state laser that emits in the green wavelength range. This all-solid-state laser system includes pumped lasers. It can be manufactured in a highly integrated manner and is particularly suitable as a light source for projection systems used in display or illumination applications. The optical design of the all solid state laser can be selected as is well known in the art. It can be pumped, for example, at one end. Such a laser is provided in the form of a rod, similar to other diode-pumped solid-state lasers well known in the art. The proposed laser can also be designed in the form of a planar waveguide laser, wherein the co-doped The material is introduced into the formation of a planar waveguide whose geometry is adapted to the emission profile of the laser diode. In this case, the laser diode and the co-doped conversion medium are preferably placed on a shared cooling structure, which allows for a highly integrated device. The high absorption of Ce3+ ions also allows lateral pumping geometry in which the laser is lightly directed in a direction perpendicular to the direction of the pumping radiation. These and other aspects of the present invention will be apparent from and elucidated with reference to the embodiments described below. [Embodiment] In the following embodiments, the proposed laser gain medium is interchanged.
Ce3+離子及Tb3 +離子。Ce_Tb-雷射藉助一基於_之雷射 二極體進行抽運。圖丨顯示此固態雷射之抽運及雷射方 案。經由Ce3+離子之4f-5d過渡來吸收該基於^他之雷射二 極體之藍光抽運輻射i。如該圖中所指示，在藉助抽運: 射1進仃激發後，在Ce3 +離子之5d頻帶與Tb3 +離子之上部雷 射狀悲（5D4狀態）之間發生能量轉移2。自Tb3 +離子之此$仏 狀恶，543 nm附近之雷射發射3藉由過渡至該等几3 +離子 之一較低狀態而開始。在此雷射方案中，雷射發射3極其 顯著。 圖2顯不所提出之Ce_Tb-雷射之一端抽運幾何形狀之一 貝例。由一 GaN雷射二極體4所發射之抽運輻射藉由適宜 光學3器件5聚焦透過該固態雷射之第一諸振器端部鏡7而進 Ce 共摻雜之增盃材料6中。用於端抽運之第一乓 振器端面鏡7對綠光波長區域内之輻射高度反射且對抽運 輻射波長抗反射。在另—側上之第二共振器端面鏡晴該 抽運輻射之波長高度反射，且對由增益材料6發射之綠光 f長充分反射以達成雷射作用。另—方面，此第二共振器 端面鏡8容許輸出耦合雷射發射3在綠光波長區域内之一部 圖3顯示所提出之固態雷射之設計之另一實例。在此實 例中，一橫向抽運幾何形狀用於該^^雷射。在此情況 125820.doc 200830652 中’該Ce-Tb-雷射之增益介質6具有兩個共振器端面鏡 10’該等共振器端面鏡反射所產生之綠光輻射之一足夠高 的部分以維持雷射作用。兩個共振器端面鏡1〇亦作為雷射 輕射3之輸出麵合鏡。如圖3中所指示，一由數個GaN雷射 二極體並排鈕成之GaN二極體雷射模組9橫向抽運增益介 質6以達成抽運輻射1在增益介質6之整個長度上之發射。 儘管已在該等圖式及前述說明中圖解說明及詳述本發 明，但此圖解說明及說明應認為係例示性或實例性而非限 馨制性，本發明並不限於該等所揭示之實施例。亦可組合上 述及請求項中之不同實施例。 根據對該等圖式、本揭示内容及該等附加請求項之研 究，熟習此項技術者在實踐所請求之發明時可瞭解及實現 所揭示之實施例之其他變化形式。在該等請求項中，「包 括」一詞並不排除其他元件或步驟，且不定冠詞「一（a) 或 （an)」並不排除複數。在互不相同的附屬請求項中 φ P東述某些措施此一事實本身並不指示不能有利地使用該等 措施之-組合。該等請求項中之任何參考符號不應視為限 定該等請求項之範疇。 參考符號列表 1 抽運輻射 2 能量轉移 3 雷射輻射 4 GaN雷射二極體 5 光學器件 125820.doc 200830652 6 Ce3+-Tb3 +共摻雜增益材料 7 第一共振器端面鏡 8 第二共振器端面鏡 9 GaN二極體雷射模組 1〇 共振腔反射鏡 【圖式簡單說明】Ce3+ ions and Tb3+ ions. The Ce_Tb-laser is pumped by means of a laser-based diode based on _. Figure 丨 shows the pumping and laser scheme for this solid state laser. The blue pumping radiation i based on the laser diode of the other is absorbed by the 4f-5d transition of the Ce3+ ion. As indicated in the figure, energy transfer 2 occurs between the 5d band of Ce3+ ions and the thunderstorm (5D4 state) above the Tb3+ ions after excitation by pumping: 1. From the Tb3+ ion, the laser emission 3 near 543 nm begins by transitioning to one of the lower 3 + ions. In this laser scheme, the laser emission 3 is extremely significant. Figure 2 shows one of the examples of Ce_Tb-laser one-end pumping geometry. The pumping radiation emitted by a GaN laser diode 4 is focused into the Ce co-doped cup material 6 by a suitable optical 3 device 5 focusing through the first resonator end mirror 7 of the solid state laser. . The first phonograph end mirror 7 for end pumping is highly reflective to radiation in the green wavelength region and anti-reflective to the pumping radiation wavelength. The second resonator end face mirror on the other side is highly reflective of the wavelength of the pumping radiation and is sufficiently reflected by the green light f emitted by the gain material 6 to achieve a laser action. Alternatively, the second resonator end mirror 8 allows for one of the output coupled laser emissions 3 in the green wavelength region. Figure 3 shows another example of the proposed solid state laser design. In this example, a lateral pumping geometry is used for the laser. In this case 125820.doc 200830652 'The Ce-Tb-laser gain medium 6 has two resonator end mirrors 10' which are sufficiently high to sustain one of the green light radiation generated by the mirror mirror reflections to maintain Laser action. The two resonator end mirrors 1〇 are also used as the output face mirrors for laser light 3 . As indicated in FIG. 3, a GaN diode laser module 9 by a plurality of GaN laser diode side-by-side buttons laterally pumps the gain medium 6 to achieve pumping radiation 1 over the entire length of the gain medium 6. Launch. The present invention has been illustrated and described in detail in the drawings and the foregoing description of the invention. Example. Different embodiments of the above and the claims may also be combined. Other variations to the disclosed embodiments can be understood and effected by those skilled in the <RTIgt; </RTI> <RTIgt; </ RTI> <RTIgt; In the above claims, the word "comprising" does not exclude other elements or steps, and the indefinite article "a" or "an" does not exclude the plural. The fact that certain measures are in the sub-claims that are different from each other does not in itself indicate that the combination of the measures cannot be used favorably. Any reference signs in such claims should not be considered as limiting the scope of such claims. REFERENCE SIGNS LIST 1 Pumping Radiation 2 Energy Transfer 3 Laser Radiation 4 GaN Laser Diode 5 Optics 125820.doc 200830652 6 Ce3+-Tb3 + Co-doped Gain Material 7 First Resonator Endoscope 8 Second Resonator End mirror 9 GaN diode laser module 1〇 cavity mirror [simplified diagram]
下文將以實例方式且結合附 雷射系統，此並不限制如該等 该4圖式顯示： 圖闡述所提出之固態雷射及 請求項所界定之保護範圍。 ❻出之雷射之-較佺實施例之-激發方 圖 所提出之雷射之一瑞地、答從 碥抽運或何形狀之一實例；及 屬3所提出之雷射之一焊^ 【主要元件符號說明】 錢柯形仏—實例。The following description will be made by way of example and in conjunction with a laser system, which is not limited to the four-figure display: The figure illustrates the protection range defined by the proposed solid-state laser and the request. The laser that is extracted - one of the examples of the laser proposed by the excitation square diagram, one of the examples of the pumping or the shape of the pump; and one of the lasers proposed by the genus 3 [Main component symbol description] Qian Ke shape 仏 - examples.
抽運輕射 能量轉移 雷射發射 GaN雷射二極體 光學器件 共掺雜增益介質 第一共振器端面鏡 第二共振器端面鏡 GaN二極體雷射模組 共振器端面鏡 I25820.doc -12 -Pumped light energy transfer laser emission GaN laser diode opto-doped gain medium first resonator end mirror second resonator end mirror GaN diode laser module resonator end mirror I25820.doc - 12 -