CN101529672A - Optically pumped solid-state laser with co-doped gain medium - Google Patents

Optically pumped solid-state laser with co-doped gain medium Download PDF

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Publication number
CN101529672A
CN101529672A CNA2007800396257A CN200780039625A CN101529672A CN 101529672 A CN101529672 A CN 101529672A CN A2007800396257 A CNA2007800396257 A CN A2007800396257A CN 200780039625 A CN200780039625 A CN 200780039625A CN 101529672 A CN101529672 A CN 101529672A
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laser
ion
solid
state laser
state
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U·韦克曼
P·J·施米特
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Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1605—Solid materials characterised by an active (lasing) ion rare earth terbium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1631—Solid materials characterised by a crystal matrix aluminate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1631—Solid materials characterised by a crystal matrix aluminate
    • H01S3/1638—YAlO3 (YALO or YAP, Yttrium Aluminium Perovskite)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1655—Solid materials characterised by a crystal matrix silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1668—Solid materials characterised by a crystal matrix scandate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1691—Solid materials characterised by additives / sensitisers / promoters as further dopants
    • H01S3/1698—Solid materials characterised by additives / sensitisers / promoters as further dopants rare earth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The present invention relates to a solid-state laser comprising a gain medium (6) of a solid-state host material which is co-doped with Ce<3+>-ions and ions of a further rare-earth material. The host material is selected such that a lower edge of the 5d band of the Ce<3+>-ions is energetically higher than an upper lasing state of the ions of the further rare-earth material. This laser can be optically pumped by GaN laser diodes (4) in the wavelength region between 400 and 450 nm and emits laser radiation in the visible wavelength range. With this laser, in particular, a GaN diode laser pumped solid-state laser emitting in the green wavelength region can be realized.

Description

Optically pumped solid-state laser with co-doped gain medium
Technical field
The present invention relates to a kind of solid-state laser that comprises the gain media (gain medium) of solid-state host material (host material), this gain media is doped with rare earth ion.
Laser is to be used to replace (the UHP: very-high performance) as the good candidate of optical projection system light source of UHP lamp now.Though can obtain red laser diode and blue laser diode, the integrated laser source that lacks green wavelength region has so far hindered laser being extensive use of in demonstration or illumination application.
Background technology
The lasing light emitter of used now green wavelength region relies on by the second harmonic generation (SHG) of infrared laser source or goes up conversion (upconversion) and carry out frequency inverted.
As under the situation of well-known dye laser, be frequency inverted to blue laser source for alternative scheme from the conversion of infrared wavelength region.Along with the latest development of the GaN based laser diode that is used for royal purple light district, this scheme becomes attractive for all solid state device.
US 6,816, and 532 B2 disclose the laser apparatus that a kind of laser diode excites, and wherein gain media is doped with rare earth ion, particularly are doped with Ho 3+-, Sm 3+-, Eu 3+-, Dy 3+-, Er 3+-and Tb 3+-ion.This solid-state gain medium is by the pumping of GaN based laser diode.Disclosed laser excite and Laser emission relates to transition between each 4f attitude of rare earth ion.Because a little less than the absorption relatively when these transition, so the efficient of this device is limited and for example need appearance interaction length such in fiber laser.For making Tb as pumping source with the GaN laser diode 3+The last laser levels of-ion 5D 4Population increase (populate), need 488nm or 380nm to 5D 3Energy level and to 5D 4Energy level continuously related (successiverelation) excites.Can't obtain efficient GaN laser diode at pumping wavelength 488nm and the two place of 380nm.
Summary of the invention
The purpose of this invention is to provide the solid-state laser of launching in visible wavelength region, it can carry out optical pumping efficiently by the GaN laser diode.
This purpose is to realize by the solid-state laser according to claim 1.Advantageous embodiments is the theme of dependent claims or is comprising that the follow-up explanation that is used for implementing embodiments of the invention is described.
The solid-state laser that is proposed comprises the gain media of solid-state host material, and this gain media codope has Ce 3+The ion of-ion and other rare earth material.Described host material is selected such that Ce 3+The lower limb that the 5d of-ion can be with is Laser emission attitude (upper lasing state) on the ion that is higher than other rare earth material on the energy.
By this gain media, all solid state laser that is proposed for example can be used in 400 and 450nm between wave-length coverage in the pumping effectively of GaN laser diode.This gain media is via Ce 3+The 4f-5d transition of-ion comes the radiation of absorptive pumping laser.Energy is from Ce 3+The 5d of-ion can be with the last Laser emission attitude of transferring to other rare earth ion, and this other rare earth ion is launched the laser emission of expectation then by the transition between last Laser emission attitude and the following Laser emission attitude.Institute's emitted laser wavelength be subjected to other rare earth ion selection influence and may be subjected to the influence of spectral characteristic of the resonator mirror of solid-state laser.The suitable selection of host material is very important, because the energy level of two kinds of rare earth ions of this host material influences.
Ce 3+The favourable combination of-ion and another trivalent rare earth ions is Ce 3+-ion and Pr 3+, Sm 3+, Eu 3+, Dy 3+And Tm 3+Combination to design the different wavelength of laser device of in visible wavelength region, launching.
In a preferred embodiment, the solid-state laser that is proposed comprises the gain media of solid-state host material, and its codope has Ce 3+-ion Tb 3+-ion.In this case, laser pumping scheme relates to Ce 3+The 4f-5d transition, from Ce 3+5d can take Tb to 3+ 5D 4The energy of attitude shifts, from Tb 3+ 5D 4Attitude generation Laser emission.This scheme is very attractive, because its height with the 4f-5d transition absorbs and the known laser property combination of rare earth 4f-4f laser.Therefore, highly integrated efficient laser device is possible.Tb 3+-ion is very attractive for the optically pumped solid-state laser during the green wavelength scope is provided, and is well isolated because it has 5D 4Attitude, the life-span is longer in many matrix.From this 5D 4Energy level, approximately the green emitted of 543nm is very significant.
Ce 3+The doping content C of-ion CePreferably be in 0.01%wt in the scope of 5%wt.Tb 3+The concentration C of-ion TbPreferably depend on Ce 3+The concentration C of-ion CeAccording to C Tb=k*C CeSelect, wherein k changes between 0.5 and 50.
Because Ce 3+The 5f of-ion can be with and the energy position of the Laser emission attitude of other rare earth ion depends on host material, so the suitable selection of this host material is important for the laser action that realizes expectation.When utilizing energy gap to be the host material of 6eV at least, observed very favourable laser works.These host materials also must guarantee Ce 3+The 5d of ion can be with and for example Tb 3+Ion 5D 4Energy between the attitude shifts.The preferred host material that is used for the solid-state laser that proposed is Y 3-xLu xAl 5-yGa yO 12(x=1,2,3; Y=1,2,3,4,5), Y 3-xCa xAl 5-xSi xO 12, Y 3-xAl 5-xSc xO 12, M 2O 3(M=Sc wherein, Y, Lu, Gd, La), CaYAlO 4And M 2SiO 5(wherein M=Y, Lu, Gd or these combination).
In the solid-state laser that is proposed, Ce 3+-ion serves as emulsion (sensitizer) and provides the good absorption of pumping radiation via the 4f-5d transition, and other rare earth ion serves as the laser active ions.Be mixed with Ce though be known in the art 3+The solid-state host material of-ion is not owing to very strong excited state absorption is suitable for laser action, but the present inventor is surprised to find, by codope Ce 3+-ion and other trivalent rare earth ions and by selecting suitable host material can be realized laser action in mode efficiently.In addition, by combination Ce 3+-ion and Tb 3+-ion has been realized all solid state laser, and it can come pumping effectively to launch in the green wavelength scope by enough GaN based laser diodes.The all solid state laser system that comprises pump laser like this can make and be particularly suitable as and be used for showing or the light source of the optical projection system used of throwing light in highly integrated mode.
As known in the art, can select the optical design of all solid state laser.Be similar to the solid-state laser of other diode pumpings known in the art, such laser can for example be set up with the form of end pumping bar (rod).The laser that is proposed also can design with the form of planar waveguide laser, wherein co-doped material is made the form of slab guide, and its geometry is suitable for the emission distribution (emission profile) of laser diode.In this case, laser diode and co-doped conversion medium are preferably placed on the shared cooling structure, and this allows highly integrated device.Ce 3+The height of-ion absorbs and also allows horizontal pumping geometry, and wherein laser emission occurs with the direction vertical with the direction of pumping radiation.
Reference is described embodiment hereinafter, and these and other aspect of the present invention will become obviously and be illustrated.
Description of drawings
The solid-state laser that is proposed and Optical Maser System will be described in conjunction with the accompanying drawings by way of example hereinafter and not limit the protection range that is defined by the claims.Accompanying drawing illustrates:
The excitation scheme of the preferred embodiment of the laser that Fig. 1 proposed;
The example of the end pumping of the laser that Fig. 2 proposed (end pumped) geometry (geometry); And
The example of the horizontal pumping of the laser that Fig. 3 proposed (transversally pumped) geometry.
Embodiment
In following examples, the gain media of the laser that is proposed is had Ce by codope 3+-and Tb 3+-ion.The Ce-Tb-laser comes pumping with the GaN based laser diode.Fig. 1 illustrates the pumping and the Laser emission scheme of this solid-state laser.The blue pump radiation 1 of GaN based laser diode is via Ce 3+The 4f-5d transition of-ion is absorbed.After exciting, at Ce with pumping radiation 1 3+The 5d of-ion can be with and Tb 3+The last Laser emission attitude of-ion ( 5D 4The energy transferase 12 takes place attitude), as shown in the figure.By from Tb 3+This of-ion 5D 4Attitude transits to Tb 3+The following attitude of-ion begins the Laser emission 3 of about 543nm.In this laser scheme, Laser emission 3 is very significant.
Fig. 2 shows the example of the end pumping geometry of the Ce-Tb-laser that is proposed.The first resonator end mirror of being assembled through this solid-state laser by suitable optical element 5 by the pumping radiation of GaN laser diode 4 emissions 7 enters Ce 3+-Tb 3+The gain material 6 of codope.The first resonator end mirror 7 that is used for end pumping for the radiation of green wavelength region be high reflection and be antireflecting for pump radiation wavelength.On the other hand, the second resonator end mirror 8 for pump radiation wavelength be high reflection and for the green wavelength by gain material 6 emissions be fully reflection so that realize the Laser emission effect.On the other hand, this second resonator end mirror 8 allows the part of the Laser emission 3 in green wavelength region to be coupled away.
Fig. 3 shows another example of the design of the solid-state laser that is proposed.In this example, laterally the geometry of pumping is used for the Ce-Tb-laser.In this case, the gain media 6 of Ce-Tb-laser has two resonator end mirrors 10, and the enough high green radiation that is generated partly of described two resonator end mirrors, 10 reflections is to keep laser action.These two resonator end mirrors 10 also are used as the output coupling mirror of laser emission 3.Gain media 6 by the GaN diode laser module 9 horizontal pumpings of forming by some GaN laser diodes side by side so that the emission of the pumping radiation 1 on the whole length of realization gain media 6, as shown in Figure 3.
Though describe in detail in accompanying drawing and front are described and described the present invention, it is illustrative or illustrative rather than restrictive that this explanation and description are considered to; The present invention is not restricted to the disclosed embodiments.Can also make up the different embodiment that describe in top and the claim.
By research accompanying drawing, disclosure and the accompanying claims, those skilled in the art can understand and realize other changes to the disclosed embodiments when putting into practice invention required for protection.In the claims, literal " comprises " does not get rid of other elements or step, and indefinite article " " or " one " do not get rid of a plurality of.Enumerating the fact of some measure in different mutually dependent claims does not represent to use the combination of these measures to obtain beneficial effect.Any Reference numeral in the claim should not be interpreted into the scope that limits these claims.
The tabulation of Reference numeral
1 pumping radiation
2 energy shift
3 laser emissions
The 4GaN laser diode
5 optical elements
6Ce 3+-Tb 3+The gain material of codope
7 first resonator end mirrors
8 second resonator end mirrors
9GaN diode laser module
10 resonator mirror

Claims (8)

1. solid-state laser comprises the gain media (6) of solid-state host material, and described gain media codope has Ce 3+The ion of-ion and other rare earth material, described host material is selected such that described Ce 3+The lower limb that the 5d of-ion can be with is the Laser emission attitude on the ion that is higher than described other rare earth material on the energy.
2. according to the solid-state laser of claim 1, the ion of wherein said other rare earth material is Tb 3+-ion.
3. according to the solid-state laser of claim 2, wherein said host material is selected such that described Ce 3+The lower limb that the 5d of-ion can be with is higher than described Tb on energy 3+-ion 5D 4Attitude and make the energy gap＞6eV of described host material.
4. according to the solid-state laser of claim 1 or 2, wherein said host material is selected from one of following material: Y 3-xLu xAl 5-yGa yO 12(x=1,2,3; Y=1,2,3,4,5), Y 3-xCa xAl 5-xSi xO 12, Y 3-xAl 5-xSc xO 12, M 2O 3(M=Sc wherein, Y, Lu, Gd, La), CaYAlO 4And M 2SiO 5(wherein M=Y, Lu, Gd or these combination).
5. according to the solid-state laser of claim 4, the Ce of wherein said host material 3+The doping content of-ion is in 0.01% weight in the scope of 5% weight and Tb 3+The doping content of-ion is Ce 3+Between 0.5 times to 50 times of the doping content of-ion.
6. according to the solid-state laser of claim 1, the ion of wherein said other rare earth material is selected from Pr 3+-, Sm 3+-, Eu 3+-, Dy 3+-and Tm 3+-ion.
7. Solid State Laser System has solid-state laser and at least one GaN laser diode (4) according to claim 1, and the gain media (6) that described GaN laser diode is arranged to described solid-state laser carries out optical pumping.
8. Solid State Laser System has solid-state laser and at least one GaN laser diode (4) according to claim 4, and the gain media (6) that described GaN laser diode is arranged to described solid-state laser carries out optical pumping.
CNA2007800396257A 2006-10-24 2007-10-15 Optically pumped solid-state laser with co-doped gain medium Pending CN101529672A (en)

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EP06122825.0 2006-10-24

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102051684A (en) * 2011-01-14 2011-05-11 中国科学院上海光学精密机械研究所 Method for growing thulium-holmium co-doped yttrium calcium aluminate laser crystal

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JP2012521650A (en) * 2009-03-23 2012-09-13 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Optically pumped solid-state laser and illumination system having the solid-state laser
US8831060B2 (en) * 2010-06-22 2014-09-09 Koninklijke Philips N.V. Laser
JPWO2014006879A1 (en) * 2012-07-02 2016-06-02 国立大学法人北海道大学 LASER MEDIUM, LASER OSCILLATION DEVICE, AND LASER OSCILLATION METHOD

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US7197059B2 (en) * 2002-05-08 2007-03-27 Melles Griot, Inc. Short wavelength diode-pumped solid-state laser

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102051684A (en) * 2011-01-14 2011-05-11 中国科学院上海光学精密机械研究所 Method for growing thulium-holmium co-doped yttrium calcium aluminate laser crystal

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WO2008050258A3 (en) 2008-06-19

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