WO2008035396A1 - Appareil d'amplification de puissance - Google Patents

Appareil d'amplification de puissance Download PDF

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Publication number
WO2008035396A1
WO2008035396A1 PCT/JP2006/318517 JP2006318517W WO2008035396A1 WO 2008035396 A1 WO2008035396 A1 WO 2008035396A1 JP 2006318517 W JP2006318517 W JP 2006318517W WO 2008035396 A1 WO2008035396 A1 WO 2008035396A1
Authority
WO
WIPO (PCT)
Prior art keywords
amplifier
impedance
power
load
output
Prior art date
Application number
PCT/JP2006/318517
Other languages
English (en)
Japanese (ja)
Inventor
Shinji Ueda
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to PCT/JP2006/318517 priority Critical patent/WO2008035396A1/fr
Priority to JP2008535203A priority patent/JPWO2008035396A1/ja
Publication of WO2008035396A1 publication Critical patent/WO2008035396A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only

Definitions

  • both the carrier amplifier 3 and the peak amplifier 8 operate to supply an output current to the load 11.
  • the load 11 apparently converted to 25 ⁇ as described above is equally driven by the carrier amplifier 3 and the peak amplifier 8, so that the impedance viewed from the point a and the load 11 from the point B Both impedances are 50 ⁇ .
  • the impedance of load 11 is 50 ⁇ .
  • the 35 ⁇ third ⁇ 4 transmission line in series with the load required in the conventional Doherty amplifier is deleted, and the first ⁇ 4 transmission on the output side of the carrier amplifier is removed.
  • the peak amplifier output matching circuit on the output side of the peak amplifier is optimized to match 100 ⁇ . As a result, it is possible to realize a power amplifying apparatus that is reduced in size by reducing one ⁇ 4 transmission line while maintaining the high efficiency characteristics and stable operation of the Doherty amplifier.
  • FIG. 3 is an equivalent circuit of the main part of the Donotty / tee amplifier for explaining the operation of the power amplifying apparatus according to Embodiment 2 of the present invention.
  • the peak amplifier 108 has
  • the load impedance of the point a force on the carrier amplifier 103 side is also (n + 1) XZ, while the load impedance from the point B on the peak amplifier 108 side is The load impedance of the point C is ⁇ (n + l) / n ⁇ XZ.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

La présente invention concerne un appareil d'amplification de puissance dans lequel le nombre de lignes de transfert λ/4 constituant partiellement un amplificateur Doherty a été réduit. Dans cet appareil d'amplification de puissance (100), l'impédance caractéristique d'une première ligne de transfert λ/4 (105) qui constitue partiellement l'amplificateur Doherty du côté d'un amplificateur de porteuse (103) est configurée sur une valeur supérieure à l'impédance de sortie de ce dernier amplificateur (103). Lorsque l'impédance de sortie de l'amplificateur de porteuse (103) est par exemple configurée sur 50 Ω, l'impédance caractéristique de la première ligne de transfert λ/4 (105) est configurée pour être 50 × 21/21/2 ≈ 71 Ω. Par ailleurs, un circuit de correspondance de sortie de crête (109) du côté de la sortie d'un amplificateur de crête (108) est adapté pour correspondre à une impédance supérieure à une impédance de charge (Z). Le circuit de correspondance de sortie de l'amplificateur de crête (109) correspond par exemple à une impédance égale au double de l'impédance de charge (Z).
PCT/JP2006/318517 2006-09-19 2006-09-19 Appareil d'amplification de puissance WO2008035396A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2006/318517 WO2008035396A1 (fr) 2006-09-19 2006-09-19 Appareil d'amplification de puissance
JP2008535203A JPWO2008035396A1 (ja) 2006-09-19 2006-09-19 電力増幅装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2006/318517 WO2008035396A1 (fr) 2006-09-19 2006-09-19 Appareil d'amplification de puissance

Publications (1)

Publication Number Publication Date
WO2008035396A1 true WO2008035396A1 (fr) 2008-03-27

Family

ID=39200229

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/318517 WO2008035396A1 (fr) 2006-09-19 2006-09-19 Appareil d'amplification de puissance

Country Status (2)

Country Link
JP (1) JPWO2008035396A1 (fr)
WO (1) WO2008035396A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102832886A (zh) * 2011-06-17 2012-12-19 英飞凌科技股份有限公司 具有定阻抗型多工器的宽带多赫蒂放大器电路
WO2013133215A1 (fr) * 2012-03-05 2013-09-12 国立大学法人 電気通信大学 Circuit amplificateur doherty
KR20140116439A (ko) * 2011-12-29 2014-10-02 알까뗄 루슨트 대역폭 확장된 도허티 전력 증폭기
JP2022527051A (ja) * 2019-03-28 2022-05-30 ウルフスピード インコーポレイテッド トランジスタ内負荷変調

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005086447A (ja) * 2003-09-08 2005-03-31 Shimada Phys & Chem Ind Co Ltd 電力合成形増幅器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005086447A (ja) * 2003-09-08 2005-03-31 Shimada Phys & Chem Ind Co Ltd 電力合成形増幅器

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HORIGUCHI K. ET AL.: "Kaso Open Stub o Mochiita OFDM 250W Kyu Doherty Zofukuki no Ko Koritsuka", 2006 NEN THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS SOGO TAIKAI KOEN RONBUNSHU C-2-12, 8 March 2006 (2006-03-08), XP003021819 *
TAKAYAMA Y. ET AL.: "Micro-Ha Doherty Zofukuki no Seikkeiho Oyobi SiMOSFET Denryoku Zofukuki", THE TRANSACTIONS OF THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS, vol. J87-C, no. 10, 1 October 2004 (2004-10-01), pages 745 - 753, XP003021820 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102832886A (zh) * 2011-06-17 2012-12-19 英飞凌科技股份有限公司 具有定阻抗型多工器的宽带多赫蒂放大器电路
CN102832886B (zh) * 2011-06-17 2015-05-13 英飞凌科技股份有限公司 具有定阻抗型多工器的宽带多赫蒂放大器电路
KR20140116439A (ko) * 2011-12-29 2014-10-02 알까뗄 루슨트 대역폭 확장된 도허티 전력 증폭기
JP2015506615A (ja) * 2011-12-29 2015-03-02 アルカテル−ルーセント 帯域幅が拡張されたドハティ電力増幅器
US9450543B2 (en) 2011-12-29 2016-09-20 Alcatel Lucent Bandwidth-extended Doherty power amplifier
KR101678753B1 (ko) * 2011-12-29 2016-11-23 알까뗄 루슨트 대역폭 확장된 도허티 전력 증폭기
WO2013133215A1 (fr) * 2012-03-05 2013-09-12 国立大学法人 電気通信大学 Circuit amplificateur doherty
JP2013187553A (ja) * 2012-03-05 2013-09-19 Univ Of Electro-Communications ドハティ増幅回路
JP2022527051A (ja) * 2019-03-28 2022-05-30 ウルフスピード インコーポレイテッド トランジスタ内負荷変調
JP7383041B2 (ja) 2019-03-28 2023-11-17 ウルフスピード インコーポレイテッド トランジスタ内負荷変調
US12009788B2 (en) 2019-03-28 2024-06-11 Macom Technology Solutions Holdings, Inc. In-transistor load modulation

Also Published As

Publication number Publication date
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