WO2008004393A1 - Céramique diélectrique, composant électronique céramique et condensateur céramique feuilleté - Google Patents
Céramique diélectrique, composant électronique céramique et condensateur céramique feuilleté Download PDFInfo
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- WO2008004393A1 WO2008004393A1 PCT/JP2007/061287 JP2007061287W WO2008004393A1 WO 2008004393 A1 WO2008004393 A1 WO 2008004393A1 JP 2007061287 W JP2007061287 W JP 2007061287W WO 2008004393 A1 WO2008004393 A1 WO 2008004393A1
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- Prior art keywords
- ceramic
- dielectric
- dielectric ceramic
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- curie temperature
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- 239000000919 ceramic Substances 0.000 title claims abstract description 138
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 28
- 150000001875 compounds Chemical class 0.000 claims abstract description 16
- 239000004020 conductor Substances 0.000 claims description 8
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 30
- 239000012298 atmosphere Substances 0.000 abstract description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 29
- 239000001301 oxygen Substances 0.000 abstract description 29
- 239000012789 electroconductive film Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 28
- 238000010304 firing Methods 0.000 description 22
- 238000001354 calcination Methods 0.000 description 16
- 239000002994 raw material Substances 0.000 description 12
- 230000007423 decrease Effects 0.000 description 10
- 239000000843 powder Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000006104 solid solution Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- -1 as described above Substances 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000011812 mixed powder Substances 0.000 description 4
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 150000001768 cations Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 241000234435 Lilium Species 0.000 description 1
- 229910008651 TiZr Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
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- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
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- C04B2235/768—Perovskite structure ABO3
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/79—Non-stoichiometric products, e.g. perovskites (ABO3) with an A/B-ratio other than 1
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
- C04B2235/85—Intergranular or grain boundary phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
Definitions
- the present invention relates to a dielectric ceramic, a ceramic electronic component, and a multilayer ceramic capacitor, and more specifically, a dielectric ceramic suitable for use in a high temperature atmosphere, a ceramic electronic component using the dielectric ceramic, and a multilayer ceramic Concerning capacitors.
- Patent Document 1 includes BaO, TiO 2, SnO, BiO, MgO as essential main components.
- Proposed dielectric porcelain composition containing at least one of 2 2 3 2 3 and Nd O within a specified range
- Patent Document 1 the composition of the essential essential component and the selective essential component is set within a predetermined range so that the relative dielectric constant ⁇ r is 1000 or more and the dielectric loss tan ⁇ force is 10% or less.
- a dielectric ceramic composition suitable for use in a delay line is obtained.
- Patent Document 2 discloses a perovskite type compound represented by a composition formula: (Ba Sn) TiO.
- Patent Document 2 a part of Ba in BaTiO is substituted with Sn within a predetermined molar range, and
- Non-Patent Document 1 when a part of force Ti having a Curie temperature Tc of BaTiO of 120 ° C is replaced with Sn, the key is
- Patent Document 1 Japanese Patent Laid-Open No. 3-040962
- Patent Literature 2 Pamphlet of International Publication No. 2005/075377
- Non-patent document 1 Kiyoshi Okazaki, “Ceramic Dielectric Engineering”, 3rd edition, Gakushuin, June 1983, p. 281-283
- the dielectric ceramic composition of Patent Document 1 is practically used in a high-temperature atmosphere because the relative dielectric constant ⁇ r rapidly decreases as the Curie temperature Tc decreases from -20 to + 15 ° C. There was a problem that it was difficult to do.
- multilayer ceramic capacitors have recently been widely used in automobile applications, and therefore, it is required that they can be used stably even in a high temperature atmosphere of about 150 ° C.
- the dielectric ceramic composition of Patent Document 1 is as low as 20 to + 15 ° C as described above.
- Non-Patent Document 1 Considering the description of Non-Patent Document 1 above, it is considered that Sn is dissolved in the Ti site.
- Patent Document 2 While [0013] to force, Patent Document 2, the oxygen partial pressure is 10 12 ⁇ at firing: extremely low damage and 10 16 MPa, flexibility of the firing conditions is narrowed, the characteristic adjustment of the ceramic electronic component There was a problem that it became difficult. In addition, the insulation of the dielectric ceramic may be lowered due to fluctuations in the firing temperature. Furthermore, when this dielectric ceramic composition is used in a multilayer ceramic capacitor, when the internal electrode is made thin, the conductive material becomes spherical when the conductive film that becomes the internal electrode and the ceramic layer are co-fired, There was a problem in that so-called electrode breakage might occur.
- Patent Document 2 oxygen partial pressure 10-12 ⁇ : doing calcined at extremely low and reducing atmosphere and 10 16 MPa.
- the oxygen partial pressure during firing is extremely low as described above, leading to a decrease in the insulating properties of the dielectric ceramic due to fluctuations in the firing temperature, etc., where the degree of freedom of firing conditions is narrow, and further, the internal electrode There was a problem that the electrode could be cut off.
- the present invention has been made in view of such circumstances, and can be used stably in a high-temperature atmosphere without impairing dielectric properties, and can be easily adjusted in characteristics, and can be electrically conductive with a ceramic layer. It is an object of the present invention to provide a dielectric ceramic that does not cause electrode breakage even when co-fired with a film, a ceramic electronic component using the dielectric ceramic, and a multilayer ceramic capacitor.
- the Curie temperature Tc is increased by dissolving Sn in the Ba site.
- the present invention has been made on the basis of such knowledge, and the dielectric ceramic according to the present invention has a principal component force S and a general formula ⁇ (BaCaSn) (TiZr) O ⁇ .
- X, y, z, and m satisfy 0.02 ⁇ x ⁇ 0.20, 0.02 ⁇ y ⁇ 0.20, 0 ⁇ z ⁇ 0.05, 0.99 ⁇ m ⁇ l.l, respectively. It is listed as ⁇ number.
- the dielectric ceramic of the present invention is characterized in that the Curie temperature is 130 ° C or higher. [0020] Further, the dielectric ceramic of the present invention is characterized in that 0.02 to 2 parts by mole is contained per 100 parts by weight of the main component 1S of at least one of Mn and V.
- the dielectric ceramic of the present invention is characterized in that Si is contained in an amount of 0.02 to 5 mol parts per 100 mol parts of the main component.
- the ceramic electronic component according to the present invention is characterized in that the ceramic body formed of the dielectric ceramic includes a conductor.
- the multilayer ceramic capacitor according to the present invention has a ceramic body in which ceramic layers and internal electrodes are alternately laminated and sintered, and external electrodes are formed at both ends of the ceramic body.
- the ceramic layer force is formed of the dielectric ceramic.
- the dielectric ceramic of the present invention since Ca promotes solid solution of Sn into the Ba site, the dielectric having a high Curie temperature Tc can be obtained without performing heat treatment at an extremely low oxygen partial pressure. Body Can obtain ceramic S. As a result, it is possible to obtain a dielectric ceramic that has stable dielectric characteristics even in a high-temperature atmosphere, has a wide degree of freedom in firing conditions, can be easily adjusted, and can avoid deterioration of insulation. It becomes.
- the Curie temperature is 130 ° C or higher, a dielectric ceramic suitable for applications such as automobiles that require stable use in a high temperature atmosphere of about 150 ° C can be obtained.
- At least one component force of Mn and V is contained in an amount of 0.02 to 2 mol parts per 100 mol parts of the main component, or 0.02 to 5 mol of Si with respect to 100 mol parts of the main component. Since part is contained, it becomes possible to improve sinterability.
- the ceramic electronic component of the present invention since the ceramic body formed of the dielectric ceramic includes a conductor, the ceramic electronic component can be used stably in a high-temperature atmosphere. By adjusting this, it is possible to easily change the dielectric characteristics, and it is possible to realize a ceramic electronic component that does not cause a decrease in insulation due to fluctuations in the firing temperature.
- the multilayer ceramic capacitor of the present invention because it is formed by a ceramic layer forces the dielectric ceramic, the oxygen partial pressure in the firing atmosphere 10- 1Q ⁇ : in the order of 10- 12 MPa firing Therefore, in addition to the above-described effects, even when the thickness of the internal electrode is reduced, it is possible to suppress the occurrence of problems such as electrode breakage due to the spherical shape of the internal electrode. Accordingly, it is possible to stably use in a high temperature atmosphere, and it is possible to easily realize a multilayer ceramic capacitor suitable for automobile applications.
- FIG. 1 is a cross-sectional view schematically showing an embodiment of a multilayer ceramic capacitor as a ceramic electronic component using a dielectric ceramic according to the present invention.
- the dielectric ceramic according to one embodiment of the present invention comprises a perovskite compound represented by the following general formula (A) as a main component.
- x, y, z, and m satisfy the following mathematical formulas (1) to (4).
- the present dielectric ceramic is mainly composed of a BaTiO 3 compound having a perovskite structure, and a part of Ba at the Ba site is Sn and C within a predetermined molar range.
- the Curie temperature Tc can be raised to a high temperature of 130 ° C or higher, and a dielectric ceramic that can be used stably even in a high temperature atmosphere of about 150 ° C can be obtained.
- the solid solution can be promoted.
- 1. 0 X 10- 1Q ⁇ 1. by firing at a low oxygen partial pressure of about 0 X 10- 12 MPa, it is possible to form a solid solution of Sn in Ba site.
- composition components are blended so that the molar ratio X is 0.02 ⁇ y ⁇ 0.20.
- the Curie temperature Tc can be raised to 130 ° C or higher.
- composition components are blended so that the molar ratio y is 0.02 ⁇ y ⁇ 0.20.
- Ti may be replaced with Zr if necessary.
- composition components are blended so that the molar ratio z is 0 ⁇ y ⁇ 0.05.
- the molar ratio m of Ba site to Ti site is 1.00 in the stoichiometric composition, but it is also preferable to shift from the stoichiometric composition if necessary.
- composition components are blended so that the molar ratio m is 0.99 ⁇ m ⁇ l.
- the force S which is a form of Ca in the dielectric ceramic, as described above
- Ca is a force that dissolves in the Ba site
- Ca has little effect on the increase or decrease of the Curie temperature Tc. As long as they do not affect the various properties, they may exist at the grain boundaries or at the crystal triple points, or they may be dissolved in the Ti site.
- the main component it is also preferable to add at least one of Mn and V to the main component.
- the content when Mn or V is added is preferably 0.02 to 2 mol parts with respect to 100 mol parts of the main component.
- the Curie point is preferably 130 ° C or higher. Since the dielectric ceramic of the present invention contains Sn as its main component, it is proved that Sn is located at the Ba site by confirming that the Curie temperature is 130 ° C. This is because, as shown in Non-Patent Document 1 described above, when Sn is located at the Ti site, the Curie temperature is greatly reduced from 120 ° C.
- the dielectric ceramic of the present invention has a part of Ba site substituted with Sn, although it is advantageous for obtaining the Curie temperature, it is not desirable to contain a lot of components that lower the Curie temperature. If a component that lowers the Curie temperature is added, it is desirable to compensate for it by increasing the amount of Sn substitution to the Ba site.
- elements other than Sn that increase the Curie temperature of barium titanate include Pb and Bi.
- Pb and Bi are environmentally hazardous substances and their resistance to reduction is very weak, making them very difficult to adopt for multilayer ceramic capacitors. From the above, by confirming that the Curie temperature is 135 ° C. or higher in the dielectric ceramic of the present invention, it is substantially proved that Sn is located as a divalent cation at the Ba site.
- FIG. 1 is a cross-sectional view showing an embodiment of a multilayer ceramic capacitor using the dielectric ceramic.
- the internal electrodes 2a to 2d are embedded in the ceramic body 1, and the external electrodes 3a and 3b are formed on both end faces of the ceramic body 1.
- the coated films 4a and 4b and the second coated films 5a and 5b are formed so as to cover the external electrodes 3a and 3b.
- the ceramic body 1 is formed by alternately laminating and firing ceramic layers 6a to 6e and internal electrodes 2a to 2d formed of the dielectric ceramic of the present invention, and the internal electrode layers 2a, 2c is electrically connected to the external electrode 3a, and the internal electrode layers 2b and 2d are electrically connected to the external electrode 3b.
- An electrostatic capacity is formed between the opposing surfaces of the internal electrode layers 2a and 2c and the internal electrode layers 2b and 2d.
- Ba compound such as BaCO
- Ti compound such as TiO, CaCO
- the ceramic raw material is weighed so that the general formula (A) satisfies the mathematical formulas (1) to (4).
- this weighed product is put into a ball mill together with cobblestones such as PSZ (Partially Stabilized Zirconia) balls and pure water, and thoroughly mixed and pulverized in a wet state, then about 1000 ° C or higher A calcination treatment (heat treatment) is performed at a temperature of to prepare a main component powder.
- calcination atmosphere it is necessary to reduce the tetravalent Sn divalent oxygen partial pressure is 1 ⁇ 0 X 10- 1Q ⁇ 1. 0 X 10- 12 MPa of N -H mixing A reducing atmosphere consisting of gas.
- Mn compounds such as MnO as subcomponent materials
- V compounds such as V 2 O, S such as SiO
- the ceramic raw material powder is put into a ball mill together with an organic binder and an organic solvent and wet mixed, thereby producing a ceramic slurry. Thereafter, the ceramic slurry is subjected to a molding process by a doctor blade method or the like. Make a green sheet.
- the conductive material contained in the internal electrode conductive paste it is preferable to use Ni, Cu, Ag, or an alloy thereof from the viewpoint of cost reduction.
- the conductive paste for external electrodes is preferably a conductive material in which glass frit is added.
- Ni, Cu, Ag, and these alloys can be used as the conductive material from the viewpoint of low cost, and Pd, Ag_Pd, etc. are used as necessary. The power to do S.
- the conductive paste for external electrodes may be applied to both end faces of the ceramic laminate, and then fired at the same time as the ceramic laminate.
- first plating films 4a and 4b made of Ni, Cu, Ni_Cu alloy, etc.
- the first plating film 4a, 4b is electrolytically plated to form the second plating film 5a, 5b made of solder, tin, etc., thereby producing a multilayer ceramic capacitor. .
- the present invention is not limited to the above-described embodiment.
- the desired main component powder is obtained at the time of calcining synthesis, but the molar ratio m of Ba site and Ti site is prepared in advance so as to be smaller than a predetermined amount, and calcining treatment is performed. Thereafter, the deficient component may be appropriately added to produce a desired main component powder.
- the component added as a deficiency is mainly dissolved in the Ba site by calcination, so that the desired m value can be satisfied.
- a multilayer ceramic capacitor is illustrated as an example of a ceramic electronic component.
- the present invention can be similarly applied to a single plate ceramic capacitor and other ceramic electronic components.
- BaCO 3, TiO 2, CaCO, and SnO were prepared as ceramic raw materials. So, BaCO 3, TiO 2, CaCO, and SnO were prepared as ceramic raw materials. So, BaCO 3, TiO 2, CaCO, and SnO were prepared as ceramic raw materials. So, BaCO 3, TiO 2, CaCO, and SnO were prepared as ceramic raw materials. So, BaCO 3, TiO 2, CaCO, and SnO were prepared as ceramic raw materials. So, BaCO 3, TiO 2, CaCO, and SnO were prepared as ceramic raw materials. So
- these ceramic raw materials were weighed so that the main component had the composition shown in Table 1. Next, these weighed materials were put into a ball mill together with PSZ balls and pure water, mixed and pulverized sufficiently by wet, and dried to obtain mixed powder.
- this mixed powder was mixed with N—H in which the oxygen partial pressure was adjusted to 1.0 X 10— 1Q '° MPa.
- the ceramic raw material powder is made of a polyvinyl butyral system using ethanol as a solvent.
- a binder was added and mixed and pulverized to obtain a ceramic slurry.
- the ceramic slurry was molded using a doctor blade method to obtain a ceramic green sheet.
- a conductive paste mainly composed of Ni was screen-printed on the surface of the ceramic green sheet to form a conductive film.
- the ceramic green sheet on which the conductive film was formed was laminated in a predetermined direction, sandwiched between ceramic green sheets on which the conductive film was not formed, and pressed to produce a ceramic laminate.
- this ceramic laminate was heated in a nitrogen atmosphere at a temperature of 350 ° C to burn and remove the binder, and then adjusted to the oxygen partial pressure shown in Table 1 H-N-H Made of gas
- a conductive paste mainly composed of Cu containing B_Li_Si_Ba_O-based glass frit was applied to both end faces of the ceramic body, and the temperature was 600 ° C in a nitrogen atmosphere.
- a baking process was performed to form an external electrode electrically connected to the internal electrode.
- the thickness of the ceramic layer interposed between the internal electrodes is 5 / im
- the thickness of the internal electrode layer is 0.5 / m
- the number of ceramic layers effective for obtaining the capacitance is 5,
- the counter electrode area per layer was 1.3 mm 2 .
- the capacitance C and the dielectric loss tan ⁇ were measured under the conditions of a frequency of 1 kHz, an effective voltage of 0.2 Vrms, and a temperature of 25 ° C.
- the relative dielectric constant ⁇ r was calculated.
- the temperature change of the capacitance was measured in the range of -55 to + 200 ° C, and the temperature at which the capacitance reached the maximum was taken as the Curie temperature.
- Sample No. 1 had a molar ratio X of 0.00 and a Curie temperature Tc of 90 ° C. This is because Sn is formulated so that the molar ratio y is 0.05, but since it does not contain Ca, the oxygen partial pressure during firing is 1.0 X 10-1 (> ' Q MPa This is probably due to the solid solution in the Ti site.
- Sample No. 2 had a high Curie temperature of 145 ° C., but Ni (conductive material) constituting the internal electrode was spheroidized.
- Ca is not contained in the dielectric ceramic, but the oxygen partial pressure during firing was extremely low at 1.0 X 10-13 '° MPa, so Sn was dissolved in the Ba site, As a result, the Curie temperature Tc increased. On the other hand, however, the oxygen partial pressure was extremely low as described above, which led to Ni spheroidization.
- Sample Nos. 3 to 6 have a molar ratio X of 0.02 to 0.04, and Ca is contained in the dielectric ceramic within the scope of the present invention. Even if the partial pressure is about 1.0 X 10 " 10 0 to 1.0 X 10 _11 ' 5 MPa, it is possible to obtain a high Curie temperature Tc of 145 ° C without causing spheroidization of the internal electrode.
- this mixed powder was mixed with the NH mixed gas adjusted to the oxygen partial pressure during calcination shown in Table 2.
- the ceramic raw material powder was mixed by wet mixing with ethanol as a solvent and an acrylic organic binder, and then dried and granulated.
- the granulated product was press-molded under a pressure of 196 MPa to obtain a disk-shaped ceramic molded body having a diameter of 12 mm and a thickness of 1 mm.
- this ceramic molded body was heated in a nitrogen atmosphere at a temperature of 350 ° C to burn and remove the binder, and then H 2 -N-adjusted to the oxygen partial pressure during firing shown in Table 2 H ⁇ gas
- the ceramic body (ceramic sintered body) was obtained by firing for 2 hours at a temperature of 1200 ° C in a reducing atmosphere of 2 2 2 strength.
- the external dimensions of these single-plate ceramic capacitors are 10 mm in diameter and 0.8 mm in thickness.
- Table 2 shows the composition components of Sample Nos. 11 to 19 and the measurement results.
- Sample No. 11 was calcined and fired in an air atmosphere and contained no Sn, so the Curie temperature Tc was 120 ° C, which was almost the same as BaTiO.
- Sample No. 12 had a low Curie temperature Tc of 105 ° C, even though it was formulated so that the molar ratio y of Sn was 0.02. Since this is calcined and fired in the air atmosphere, Sn is not reduced but is mainly dissolved in the Ti site. As a result, the Curie temperature Tc is BaTiO.
- Sample No. 13 was prepared so that the molar ratio y of Sn was 0.02, and the oxygen partial pressure during firing was reduced to 1.0X10— "' 5 MPa.
- the Curie temperature Tc was substantially the same was 105 ° C. it is although baked processing 1.
- 0X10- U 'in a low oxygen partial pressure of 5 MPa, since the calcination process was performed in an air atmosphere, Sn will be sufficiently reduced As a result, the Curie temperature Tc was lower than that of BaTiO.
- Sample Nos. 14 to 18 had a Ca molar ratio X of 0.13 and a Sn molar ratio y of Both 0.02 to 0.20 are within the scope of the present invention.
- a solid solution in the Ba site of Sn calcined at: 1. 0X10- 1Q: each heat treatment at '° MPa, during firing 1.
- 0 X 10- U' moderate low oxygen partial pressure of 5 MPa Even if it performed, Curie temperature Tc which did not cause the dielectric property fall was able to be raised to 130-185 degreeC.
- the axial ratio cZa increases as the Curie temperature Tc increases, and the crystal system changes to a cubic system tetragonal system. Therefore, if the maximum point due to temperature change of relative permittivity ⁇ r is unclear, Curie temperature Tc can be estimated by measuring axial ratio c / a.
- Multilayer ceramic capacitors of sample numbers 21 to 29 were prepared by the same method and procedure as in [Example 1], so that the main component had the composition shown in Table 3.
- each heat treatment the oxygen partial pressure during the calcination time and calcination set to either 1. 0X10- 1Q 'Q MPa was conducted.
- Table 3 shows the composition components of sample numbers 2:! -29 and the measurement results.
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Description
Claims
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DE112007001335.4T DE112007001335B4 (de) | 2006-07-07 | 2007-06-04 | Dielektrische Keramik, Keramikelektronikelement und Vielschicht-Keramikkondensator |
JP2008523624A JP5131595B2 (ja) | 2006-07-07 | 2007-06-04 | 誘電体セラミック、及びセラミック電子部品、並びに積層セラミックコンデンサ |
CN2007800258628A CN101489952B (zh) | 2006-07-07 | 2007-06-04 | 电介质陶瓷、及陶瓷电子部件、以及叠层陶瓷电容器 |
US12/340,929 US7595975B2 (en) | 2006-07-07 | 2008-12-22 | Dielectric ceramic, ceramic electronic element, and multilayer ceramic capacitor |
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Also Published As
Publication number | Publication date |
---|---|
KR101083553B1 (ko) | 2011-11-14 |
TWI346095B (ja) | 2011-08-01 |
US7595975B2 (en) | 2009-09-29 |
KR20090015146A (ko) | 2009-02-11 |
CN101489952B (zh) | 2013-05-01 |
DE112007001335B4 (de) | 2019-05-23 |
DE112007001335T9 (de) | 2016-12-22 |
JPWO2008004393A1 (ja) | 2009-12-03 |
CN101489952A (zh) | 2009-07-22 |
US20090128989A1 (en) | 2009-05-21 |
TW200812931A (en) | 2008-03-16 |
DE112007001335T5 (de) | 2009-05-20 |
JP5131595B2 (ja) | 2013-01-30 |
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